JP2003203581A - Photoelectric surface and photoelectric conversion tube - Google Patents
Photoelectric surface and photoelectric conversion tubeInfo
- Publication number
- JP2003203581A JP2003203581A JP2002000842A JP2002000842A JP2003203581A JP 2003203581 A JP2003203581 A JP 2003203581A JP 2002000842 A JP2002000842 A JP 2002000842A JP 2002000842 A JP2002000842 A JP 2002000842A JP 2003203581 A JP2003203581 A JP 2003203581A
- Authority
- JP
- Japan
- Prior art keywords
- photocathode
- vacuum container
- base film
- film
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光電面およびこの
光電面が設けられた光電変換管に関する。TECHNICAL FIELD The present invention relates to a photocathode and a photoelectric conversion tube provided with the photocathode.
【０００２】[0002]
【従来の技術】紫外線に有感な透過型光電面として、テ
ルル；Ｔｅとアルカリ金属（セシウム；Ｃｓ、カリウ
ム；Ｋ、ルビジウム；Ｒｂなど）を含むものが知られて
いる。このような光電面は、石英などの窓材上にクロ
ム；Ｃｒなどからなる下地膜を堆積し、その上にＴｅと
アルカリ金属の光電子放出膜を堆積して構成される。2. Description of the Related Art As a transmission type photocathode sensitive to ultraviolet rays, one containing tellurium; Te and an alkali metal (cesium; Cs, potassium; K, rubidium; Rb, etc.) is known. Such a photocathode is formed by depositing a base film made of chromium; Cr or the like on a window material such as quartz, and then depositing a photoelectron emission film of Te and an alkali metal thereon.
【０００３】この種の透過型光電面では、従来、より短
い波長域、たとえば２００ｎｍ以下の波長域での感度が
高く、可視域での感度が低いことが要求されていた。こ
のような要求に対応すべく、従来における光電面の下地
膜としては、主に、Ｃｒ、ニッケル；Ｎｉ、アルミニウ
ム；Ａｌなどが用いられていた。Conventionally, this type of transmission type photocathode has been required to have high sensitivity in a shorter wavelength range, for example, a wavelength range of 200 nm or less, and low sensitivity in a visible range. In order to meet such demands, Cr, nickel; Ni, aluminum; Al, etc. have been mainly used as the underlying film for the photocathode in the past.
【０００４】他方、この種の光電面を有する光電変換
管、たとえばイメージインテンシファイアなどでは、ゲ
ート動作が必要とされることは少なかった。On the other hand, in a photoelectric conversion tube having this type of photocathode, such as an image intensifier, it is rare that a gate operation is required.
【０００５】[0005]
【発明が解決しようとする課題】これに対し、近年にお
いては、この種の透過型光電面に対して多様な要求がな
されるようになり、たとえば２５０ｎｍ〜３２０ｎｍの
波長域において高感度であり、かつゲート動作が可能な
透過型光電面が要求されるようになった。しかし、上記
の従来のＣｒ、Ｎｉ、Ａｌなどは、短い波長域での感度
が良好であり、２５０ｎｍ〜３２０ｎｍの波長域では、
感度が低下する傾向にある。On the other hand, in recent years, various requirements have been made for this type of transmissive photocathode, and for example, high sensitivity in the wavelength range of 250 nm to 320 nm, In addition, a transmissive photocathode capable of gate operation has been required. However, the above-mentioned conventional Cr, Ni, Al, etc. have good sensitivity in a short wavelength range, and in the wavelength range of 250 nm to 320 nm,
The sensitivity tends to decrease.
【０００６】また、ゲート動作を良好に行うことができ
るようにするためには、下地膜の面抵抗を低くすること
が必要であるが、上記従来のＣｒ，Ｎｉ，Ａｌなどの下
地膜を用いた場合に面抵抗を低くすると、透過率が下が
ってしまう。このため、これらの金属からなる下地膜上
に光電面を作製しても、実効的な量子効率が低くなって
しまうという問題があった。Further, in order to perform the gate operation satisfactorily, it is necessary to lower the surface resistance of the underlayer film. However, the above-mentioned conventional underlayer film of Cr, Ni, Al or the like is used. If the sheet resistance is lowered, the transmittance will decrease. Therefore, even if the photocathode is formed on the base film made of these metals, there is a problem that the effective quantum efficiency becomes low.
【０００７】そこで、本発明の課題は、２５０ｎｍ〜３
２０ｎｍの波長域の光に対して良好な感度を示し、また
ゲート動作を良好に行うことができる光電面、およびこ
の光電面を用いた光電変換管を提供することにある。Therefore, an object of the present invention is 250 nm to 3 nm.
It is an object to provide a photocathode that exhibits good sensitivity to light in the wavelength range of 20 nm and that can perform good gate operation, and a photoelectric conversion tube using this photocathode.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決すべく、
本発明者らの試行錯誤の結果完成された本発明は、入射
光を透過する窓材と、窓材に形成されたチタンを含む下
地膜と、下地膜上に形成されたテルルとアルカリ金属を
含む光電子放出膜とを備えることを特徴とする光電面で
ある。[Means for Solving the Problems] In order to solve the above problems,
The present invention completed as a result of trial and error by the present inventors includes a window material that transmits incident light, a base film containing titanium formed on the window material, and tellurium and an alkali metal formed on the base film. And a photoelectron emitting film including the photoelectron emitting film.
【０００９】ここで、アルカリ金属は、セシウム、カリ
ウム、またはルビジウムであるのが好適である。Here, the alkali metal is preferably cesium, potassium, or rubidium.
【００１０】また、上記の光電面が設けられた真空容器
を備える光電変換管とすることができ、光電面が設けら
れた真空容器と、真空容器に収容され光電子放出膜から
放出された電子を増倍する電子増倍手段と、電子増倍手
段で増倍された電子が入射され、増倍された電子を光に
変換する蛍光面とを備えるイメージインテンシファイア
とすることもできる。このとき、イメージインテンシフ
ァイアは、ゲート動作が可能なものとするのが好適であ
る。Further, the photoelectric conversion tube can be provided with a vacuum container provided with the above-mentioned photocathode, and the vacuum container provided with the photocathode and the electrons contained in the vacuum container and emitted from the photoelectron emission film can be provided. It is also possible to use an image intensifier provided with an electron multiplying means for multiplying, and a phosphor screen which receives electrons multiplied by the electron multiplying means and converts the multiplied electrons into light. At this time, the image intensifier is preferably capable of gate operation.
【００１１】さらには、光電面が設けられた真空容器
と、真空容器の内部に収容され光電子放出膜から放出さ
れた電子を増倍する電子増倍手段と、真空容器の内部に
収容され電子増倍手段で増倍された電子が入射されるア
ノードを備える光電子増倍管とすることもできる。Furthermore, a vacuum container provided with a photocathode, an electron multiplying means contained in the vacuum container for multiplying electrons emitted from the photoelectron emission film, and an electron multiplying device contained in the vacuum container. It is also possible to use a photomultiplier tube including an anode on which the electrons multiplied by the multiplying means are incident.
【００１２】[0012]
【発明の実施の形態】以下、図面を参照して、本発明の
好適な実施形態について詳細に説明する。本実施形態で
は、光電変換管として、イメージインテンシファイアを
例に挙げて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will now be described in detail with reference to the drawings. In this embodiment, an image intensifier will be described as an example of the photoelectric conversion tube.
【００１３】図１は本発明に係る光電面を備えるイメー
ジインテンシファイアの断面図である。図１に示すよう
に、近接型のイメージインテンシファイア１は、真空容
器２を備えており、真空容器２の内部には光電面３が設
けられている。光電面３は入射光を透過する入射窓材４
を有している。入射窓材４は、紫外線透過性のものであ
ればよく、たとえば石英板とフッ化マグネシウム；Ｍｇ
Ｆ2を用いることができる。FIG. 1 is a sectional view of an image intensifier having a photocathode according to the present invention. As shown in FIG. 1, the proximity-type image intensifier 1 includes a vacuum container 2, and a photocathode 3 is provided inside the vacuum container 2. The photocathode 3 is an incident window member 4 that transmits incident light.
have. The incident window member 4 may be made of a material that transmits ultraviolet light, such as a quartz plate and magnesium fluoride; Mg.
F 2 can be used.
【００１４】窓材４の内面には下地膜５としてチタン；
Ｔｉの薄膜が、ＥＢ蒸着（エレクトロンビーム蒸着）に
よる真空蒸着によって形成されている。下地膜５の上に
はＴｅとアルカリ金属であるＫ、Ｃｓ、およびＲｂを含
む光電子放出膜６が形成されている。Ｔｅとアルカリ金
属の組み合わせについては、Ｋ−Ｔｅ，Ｃｓ−Ｔｅ、Ｋ
−Ｃｓ−Ｔｅのほか、各種のものが考えられる。Titanium as a base film 5 is formed on the inner surface of the window member 4.
A thin film of Ti is formed by vacuum evaporation by EB evaporation (electron beam evaporation). A photoelectron emission film 6 containing Te and alkali metals K, Cs, and Rb is formed on the base film 5. Regarding the combination of Te and alkali metal, K-Te, Cs-Te, K
In addition to -Cs-Te, various types are possible.
【００１５】また、真空容器２における光電面３の後方
には、電子を増倍する増倍部となるマイクロチャンネル
プレート７が設けられており、マイクロチャンネルプレ
ート７のさらに後方には、蛍光面８が設けられている。
マイクロチャンネルプレート７で増倍された電子は蛍光
面８に入射される。蛍光面８では、入射した電子を光に
変換して外部に出射する。さらに、蛍光面８の後方には
出射窓材９が設けられている。蛍光面８から出射した光
は、出射窓材９を介して外部に出射される。A microchannel plate 7 is provided behind the photocathode 3 in the vacuum container 2 and serves as a multiplication unit for multiplying electrons. Further behind the microchannel plate 7, a fluorescent screen 8 is provided. Is provided.
The electrons multiplied by the microchannel plate 7 are incident on the phosphor screen 8. On the phosphor screen 8, the incident electrons are converted into light and emitted to the outside. Further, an emission window member 9 is provided behind the fluorescent screen 8. The light emitted from the phosphor screen 8 is emitted to the outside through the emission window member 9.
【００１６】本実施形態においては、下地膜５としてＴ
ｉの薄膜を用いている。Ｔｉの薄膜からなる下地膜５
は、後の実施例で示すように、面抵抗が小さいので、ゲ
ート動作を容易に行うことができる。また、Ｔｉは、２
５０ｎｍ〜３２０ｎｍの波長域で良好な感度を示してい
る。したがって２５０ｎｍ〜３２０ｎｍの波長域で良好
な感度を要求される光電面３の下地膜５として、好適に
用いることができる。また、Ｔｉは、たとえばＣｒと比
較すると面抵抗値が低いので、下地膜５としてＴｉを用
いると、Ｃｒを用いる場合よりも膜厚を薄くすることが
できる。この結果、分光透過率を高めることができる。
なお、光電子放出膜６を形成するにあたり、Ｒｂは２８
０ｎｍ近辺における感度が高くないので、光電子放出膜
６としてはＫおよびＣｓを用いるのが望ましいが、Ｒｂ
を用いることもできる。In the present embodiment, T is used as the base film 5.
i thin film is used. Base film 5 made of a thin film of Ti
Since the sheet resistance is small, as will be shown in Examples later, the gate operation can be easily performed. Also, Ti is 2
Good sensitivity is exhibited in the wavelength range of 50 nm to 320 nm. Therefore, it can be suitably used as the base film 5 of the photocathode 3 which requires good sensitivity in the wavelength range of 250 nm to 320 nm. Further, since Ti has a lower sheet resistance value than Cr, for example, the use of Ti as the base film 5 can reduce the film thickness as compared with the case of using Cr. As a result, the spectral transmittance can be increased.
In forming the photoelectron emission film 6, Rb is 28
Since the sensitivity around 0 nm is not high, it is desirable to use K and Cs as the photoelectron emission film 6, but Rb
Can also be used.
【００１７】[0017]
【実施例】本発明者らは、面抵抗が小さく、かつ２５０
ｎｍ〜３２０nmの波長域で、良好な感度を示す下地膜と
して好適な材料を求めて、以下の実験を行った。EXAMPLES The present inventors have found that the sheet resistance is small and the sheet resistance is 250
In the wavelength range of nm to 320 nm, the following experiment was conducted in search of a material suitable as a base film having good sensitivity.
【００１８】《実験１》まず、２５０ｎｍ〜３２０ｎｍ
の波長域で良好な感度を示す下地膜を求めて、種々の材
料を下地膜とし、その量子効率を計測した。この実験に
おいては、下地膜としてＮｉ、タングステン；Ｗ、一酸
化ニッケル；ＮｉＯ、白金；Ｐｔ、Ａｌ、Ｃｒ、および
Ｔｉを用いた。また、光電子放出膜としてはいずれもＫ
−Ｃｓ−Ｔｅを用いた。さらに、各材料を用いた下地膜
は、下地膜を蒸着した際の面抵抗が一定（１１ｋΩ）と
なるようにして形成した。その結果を図２に示す。<< Experiment 1 >> First, 250 nm to 320 nm
An underlayer film showing good sensitivity in the wavelength region of was sought, and various materials were used as the underlayer film, and the quantum efficiency was measured. In this experiment, Ni, tungsten; W, nickel monoxide; NiO, platinum; Pt, Al, Cr, and Ti were used as the base film. In addition, K is used as the photoelectron emission film.
-Cs-Te was used. Further, the base film using each material was formed so that the surface resistance when the base film was deposited was constant (11 kΩ). The result is shown in FIG.
【００１９】図２から判るように、ＣｒおよびＴｉを除
く他の材料では、おおむね波長が２００ｎｍの領域で高
い量子効率を示し、波長が長くなるにつれて量子効率が
低下する傾向が見られた。また、Ｃｒは、２００ｎｍ〜
２５０ｎｍの波長域の光に対しては、波長が長くなるに
つれて量子効率がわずかに上昇し、２５０ｎｍより長い
波長域の光に対しては、波長が長くなるにつれて量子効
率が低下する傾向が見られた。これに対して、Ｔｉは、
２００ｎｍ〜２７０ｎｍの波長域の光に対しては、波長
が長くなるにつれて量子効率が上昇し、２７０ｎｍより
長い波長域の光に対しては、波長が長くなるにつれて量
子効率が低下する傾向が見られた。また、２５０ｎｍ〜
３２０ｎｍの波長域の光に対しては、Ｔｉは、実験に用
いた他の材料と比較して高い量子効率を示すものであっ
た。As can be seen from FIG. 2, the other materials except Cr and Ti exhibited high quantum efficiency in the wavelength region of about 200 nm, and the quantum efficiency tended to decrease as the wavelength became longer. Moreover, Cr is 200 nm-
For light in the wavelength range of 250 nm, the quantum efficiency slightly increases as the wavelength becomes longer, and for light in the wavelength range longer than 250 nm, the quantum efficiency tends to decrease as the wavelength becomes longer. It was On the other hand, Ti is
For light in the wavelength range of 200 nm to 270 nm, the quantum efficiency increases as the wavelength becomes longer, and for light in the wavelength range longer than 270 nm, the quantum efficiency tends to decrease as the wavelength becomes longer. It was Also, from 250 nm
For light in the wavelength range of 320 nm, Ti exhibited higher quantum efficiency than other materials used in the experiment.
【００２０】以上の実験１の結果から、２５０ｎｍ〜３
２０ｎｍの波長域の光に対しては、Ｔｉを用いた下地膜
が良好な量子効率を示すと言えることが判った。From the results of Experiment 1 above, 250 nm-3
It was found that the base film using Ti exhibits good quantum efficiency for light in the wavelength range of 20 nm.
【００２１】《実験２》続いて、Ｔｉからなる下地膜
と、Ｃｒからなる下地膜のそれぞれの面抵抗の熱による
変化を計測した。この実験では、下地膜がＴｉである光
電面を備えるイメージインテンシファイアの使用時にお
ける下地膜の面抵抗と、下地膜がＣｒであるイメージイ
ンテンシファイアの使用時における下地膜の面抵抗をそ
れぞれ計測した。この実験では、セット時（下地膜にＣ
ｒまたはＴｉを蒸着した時）、ガス抜き終了時、Ｈ・Ｃ
終了時、冷却後、およびリーク後にそれぞれ面抵抗を計
測した。その結果を図３に示す。<Experiment 2> Subsequently, changes in surface resistance of the undercoat film made of Ti and the undercoat film made of Cr due to heat were measured. In this experiment, the surface resistance of the base film when using an image intensifier having a photocathode whose base film is Ti and the surface resistance of the base film when using an image intensifier whose base film is Cr are respectively Measured. In this experiment, at the time of setting (C on the base film
(when r or Ti is vapor-deposited), when degassing is completed, HC
The sheet resistance was measured at the end, after cooling, and after leakage. The result is shown in FIG.
【００２２】図３から判るように、セット時において
は、わずかにＣｒを用いた下地膜の面抵抗が小さかった
が、その他の時には、Ｔｉを用いた下地膜の面抵抗の方
が小さいという結果となった。この結果から、Ｔｉを用
いた下地膜では、面抵抗を小さくすることができるとい
うことが判った。As can be seen from FIG. 3, the surface resistance of the base film using Cr was slightly small at the time of setting, but the surface resistance of the base film using Ti was smaller at other times. Became. From this result, it was found that the surface resistance can be reduced in the base film using Ti.
【００２３】《実験３》さらに、光電面の下地膜として
Ｔｉを用いた場合において、面抵抗が異なるときの分光
感度特性について調べる実験を行った。この実験では、
下地膜の抵抗が３．２ｋΩ、６．５ｋΩ、９．０ｋΩ、
１１ｋΩ、１５ｋΩ、２９ｋΩのときの量子効率を計測
した。その結果を図４に示す。<Experiment 3> Further, an experiment was conducted to examine the spectral sensitivity characteristics when the surface resistance was different when Ti was used as the underlying film of the photocathode. In this experiment,
The resistance of the base film is 3.2 kΩ, 6.5 kΩ, 9.0 kΩ,
The quantum efficiency was measured at 11 kΩ, 15 kΩ, and 29 kΩ. The result is shown in FIG.
【００２４】図４から判るように、下地膜の面抵抗が異
なる場合でも、下地膜としてＴｉを用いていることによ
り、２００ｎｍ〜２７０ｎｍの波長域の光に対しては、
波長が長くなるほど量子効率が高くなり、２７０ｎｍよ
り長い波長域の光に対しては、波長が長くなるにつれて
量子効率が低くなる傾向が見られた。また、面抵抗と量
子効率との関係に着目すると、両者の間における相関関
係を見出すことはできなかった。この結果から、下地膜
としてＴｉを用いることにより、面抵抗が異なる場合で
あっても、２５０ｎｍ〜３２０ｎｍの波長域の光に対し
て高い量子効率を得ることができることが判った。As can be seen from FIG. 4, even when the surface resistances of the base films are different, by using Ti as the base film, the light in the wavelength range of 200 nm to 270 nm is
As the wavelength becomes longer, the quantum efficiency becomes higher, and for light in the wavelength region longer than 270 nm, the quantum efficiency tends to become lower as the wavelength becomes longer. Further, focusing on the relationship between the sheet resistance and the quantum efficiency, it was not possible to find a correlation between the two. From this result, it was found that by using Ti as the base film, high quantum efficiency can be obtained for light in the wavelength range of 250 nm to 320 nm even when the sheet resistance is different.
【００２５】以上の実験の結果より、Ｔｉを用いた下地
膜を有する光電面とすることにより、下地膜の面抵抗を
小さくすることができるので、良好なゲート動作を行う
ことができるとともに、２５０ｎｍ〜３２０ｎｍの波長
域の光に対して良好な感度を示すことができることが判
った。From the results of the above experiment, by using a photocathode having an underlayer film using Ti, the sheet resistance of the underlayer film can be reduced, so that a good gate operation can be performed and 250 nm. It has been found that good sensitivity can be exhibited for light in the wavelength range of up to 320 nm.
【００２６】以上、本発明の好適な実施形態について説
明したが、本発明は種々の変形が可能である。たとえ
ば、上記実施形態では光電面をイメージインテンシファ
イアに設けたが、イメージインテンシファイア以外の光
電変換管、たとえば光電子増倍管に設けることもでき
る。このときの光電子増倍管は、たとえば次のようにし
て構成することができる。真空容器の内部に上記実施形
態で示した光電面３（図１）を設け、光電面３の後方に
電子を増倍する増倍部となるダイノードあるいはマイク
ロチャンネルプレートを設ける。その後方には陽極（ア
ノード）を真空容器の内部に収容した状態で設けられ
る。陽極には、リードピンを介して上記の光電面、電子
増倍部および陽極に所定のバイアスが印加される。そし
て、陽極からの出力信号はリードピンを介して外部に出
力される。The preferred embodiments of the present invention have been described above, but the present invention can be modified in various ways. For example, although the photocathode is provided in the image intensifier in the above embodiment, it may be provided in a photoelectric conversion tube other than the image intensifier, for example, a photomultiplier tube. The photomultiplier tube at this time can be configured as follows, for example. The photocathode 3 (FIG. 1) shown in the above embodiment is provided inside the vacuum container, and a dynode or a microchannel plate that serves as a multiplication unit for multiplying electrons is provided behind the photocathode 3. Behind it, an anode is provided in a state of being housed inside a vacuum container. A predetermined bias is applied to the anode through the lead pin to the photocathode, the electron multiplying section and the anode. Then, the output signal from the anode is output to the outside via the lead pin.
【００２７】また、上記の実施形態では、下地膜をＴｉ
として説明しているが、ここでいうＴｉは、純粋なＴｉ
からなるもののみならず、多少の不純物が含まれるもの
であってもよい。また、Ｔｉの蒸着時に自然酸化膜が形
成された下地膜であってもよい。In the above embodiment, the base film is made of Ti.
However, Ti here means pure Ti.
Not only the above-mentioned materials but also those containing some impurities. Further, it may be a base film on which a natural oxide film is formed when Ti is vapor-deposited.
【００２８】[0028]
【発明の効果】以上の説明のとおり、本発明によれば、
２５０ｎｍ〜３２０ｎｍの波長域の光に対して良好な感
度を示し、またゲート動作を可能とする光電面およびこ
の光電面を用いた光電変換管を提供することができる。As described above, according to the present invention,
It is possible to provide a photocathode that exhibits good sensitivity to light in the wavelength range of 250 nm to 320 nm and that enables gate operation, and a photoelectric conversion tube using this photocathode.
【図１】本発明に係るイメージインテンシファイアの側
断面図である。FIG. 1 is a side sectional view of an image intensifier according to the present invention.
【図２】光電面の下地膜として種々の材料を用いた際に
おける透過する光の波長と量子効率の関係を示すグラフ
である。FIG. 2 is a graph showing the relationship between the wavelength of transmitted light and the quantum efficiency when various materials are used as the base film of the photocathode.
【図３】Ｔｉを用いた下地膜とＣｒを用いた下地膜の面
抵抗の変化を示すグラフである。FIG. 3 is a graph showing changes in sheet resistance of a base film using Ti and a base film using Cr.
【図４】面抵抗の異なるＴｉを用いた下地膜を透過する
光の波長と量子効率の関係を示すグラフである。FIG. 4 is a graph showing the relationship between the wavelength and the quantum efficiency of light transmitted through a base film using Ti having different sheet resistances.
１…イメージインテンシファイア、２…真空容器、３…
光電面、４…入射窓材、５…下地膜、６…光電子放出
膜、７…マイクロチャンネルプレート（増倍部）。1 ... Image intensifier, 2 ... Vacuum container, 3 ...
Photocathode, 4 ... Incident window material, 5 ... Underlayer film, 6 ... Photoelectron emission film, 7 ... Microchannel plate (multiplier).
───────────────────────────────────────────────────── フロントページの続き (72)発明者 水野 到 静岡県浜松市市野町1126番地の１ 浜松ホ トニクス株式会社内 Ｆターム(参考） 5C037 GG02 GG06 GH05 GH11 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor, Yutaka Mizuno 1 Hamamatsuho, 1126 Nomachi, Hamamatsu City, Shizuoka Prefecture Tonics Co., Ltd. F-term (reference) 5C037 GG02 GG06 GH05 GH11
Claims (6)
成されたチタンを含む下地膜と、前記下地膜上に形成さ
れたテルルとアルカリ金属を含む光電子放出膜とを備え
ることを特徴とする光電面。1. A window material which transmits incident light, a base film containing titanium formed on the window material, and a photoelectron emission film containing tellurium and an alkali metal formed on the base film. Characteristic photocathode.
ム、またはルビジウムである請求項１に記載の光電面。2. The photocathode according to claim 1, wherein the alkali metal is cesium, potassium, or rubidium.
が設けられた真空容器を備える光電変換管。3. A photoelectric conversion tube provided with a vacuum container provided with the photocathode according to claim 1.
が設けられた真空容器と、 前記真空容器に収容され前記光電子放出膜から放出され
た電子を増倍する電子増倍手段と、 前記電子増倍手段で増倍された電子が入射され、前記増
倍された電子を光に変換する蛍光面と、 を備えるイメージインテンシファイア。4. A vacuum container provided with the photocathode according to claim 1 or 2, and an electron multiplying unit for multiplying electrons emitted from the photoelectron emission film and housed in the vacuum container, An image intensifier, comprising: a phosphor screen on which electrons multiplied by the electron multiplying means are incident and which converts the multiplied electrons into light.
のイメージインテンシファイア。5. The image intensifier according to claim 4, which is capable of gating.
が設けられた真空容器と、 前記真空容器の内部に収容され前記光電子放出膜から放
出された電子を増倍する電子増倍手段と、 前記真空容器の内部に収容され前記電子増倍手段で増倍
された電子が入射されるアノードを備える光電子増倍
管。6. A vacuum container provided with the photocathode according to claim 1 or 2, and an electron multiplying means for multiplying electrons emitted from the photoelectron emission film and housed inside the vacuum container. And a photomultiplier tube including an anode which is housed inside the vacuum container and into which electrons multiplied by the electron multiplying means are incident.
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|---|---|---|---|
| JP2002000842A JP4116294B2 (en) | 2002-01-07 | 2002-01-07 | Photocathode and photoelectric conversion tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002000842A JP4116294B2 (en) | 2002-01-07 | 2002-01-07 | Photocathode and photoelectric conversion tube |
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| JP2003203581A true JP2003203581A (en) | 2003-07-18 |
| JP4116294B2 JP4116294B2 (en) | 2008-07-09 |
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| JP2002000842A Expired - Lifetime JP4116294B2 (en) | 2002-01-07 | 2002-01-07 | Photocathode and photoelectric conversion tube |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8421354B2 (en) | 2006-12-28 | 2013-04-16 | Hamamatsu Photonics K.K. | Photocathode, photomultiplier and electron tube |
| WO2013081195A1 (en) * | 2011-11-28 | 2013-06-06 | 한국기초과학지원연구원 | Anion generating and electron capture dissociation apparatus using cold electrons |
| CN103824739A (en) * | 2014-02-28 | 2014-05-28 | 中国科学院西安光学精密机械研究所 | Framing image converter tube |
| WO2016104243A1 (en) * | 2014-12-26 | 2016-06-30 | 浜松ホトニクス株式会社 | Photoelectric surface, photoelectric conversion tube, image intensifier, and photomultiplier tube |
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2002
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8421354B2 (en) | 2006-12-28 | 2013-04-16 | Hamamatsu Photonics K.K. | Photocathode, photomultiplier and electron tube |
| US9230791B2 (en) | 2011-11-28 | 2016-01-05 | Korea Basic Science Institute | Anion generating and electron capture dissociation apparatus using cold electrons |
| WO2013081195A1 (en) * | 2011-11-28 | 2013-06-06 | 한국기초과학지원연구원 | Anion generating and electron capture dissociation apparatus using cold electrons |
| EP3065159A4 (en) * | 2013-11-01 | 2017-06-28 | Hamamatsu Photonics K.K. | Transmission photocathode |
| US9824844B2 (en) | 2013-11-01 | 2017-11-21 | Hamamatsu Photonics K.K. | Transmission mode photocathode |
| CN103824739A (en) * | 2014-02-28 | 2014-05-28 | 中国科学院西安光学精密机械研究所 | Framing image converter tube |
| WO2016104243A1 (en) * | 2014-12-26 | 2016-06-30 | 浜松ホトニクス株式会社 | Photoelectric surface, photoelectric conversion tube, image intensifier, and photomultiplier tube |
| JP2016126839A (en) * | 2014-12-26 | 2016-07-11 | 浜松ホトニクス株式会社 | Photoelectric surface, photoelectric conversion tube, image intensifier, and photomultiplier tube |
| CN107112175A (en) * | 2014-12-26 | 2017-08-29 | 浜松光子学株式会社 | Photoelectric surface, photoelectric conversion tube, image intensifier and photoelectron-multiplier-tube |
| KR20170099934A (en) * | 2014-12-26 | 2017-09-01 | 하마마츠 포토닉스 가부시키가이샤 | Photoelectric surface, photoelectric conversion tube, image intensifier, and photomultiplier tube |
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| KR102582084B1 (en) | 2014-12-26 | 2023-09-25 | 하마마츠 포토닉스 가부시키가이샤 | Photoelectric surface, photoelectric conversion tube, image intensifier, and photomultiplier tube |
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