JP2003201472A5 - - Google Patents

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JP2003201472A5
JP2003201472A5 JP2002305258A JP2002305258A JP2003201472A5 JP 2003201472 A5 JP2003201472 A5 JP 2003201472A5 JP 2002305258 A JP2002305258 A JP 2002305258A JP 2002305258 A JP2002305258 A JP 2002305258A JP 2003201472 A5 JP2003201472 A5 JP 2003201472A5
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deposited
vacuum
layer
organic
film thickness
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JP3797310B2 (en
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【0116】
実施例8〜3および比較例3〜6
洗浄したITO電極付きガラス板上に、4,4’−ビス[N−(1−ナフチル)−N−フェニルアミノ]ビフェニル(α−NPD)を真空蒸着して膜厚30nmの正孔注入層を形成した。次いで、表1の化合物を真空蒸着し、膜厚30nmの発光層を得た。さらに、ビス(2−メチル−8−ヒドロキシキノリナート)(フェノラート)ガリウム錯体を真空蒸着して膜厚30nmの電子注入層を作成し、その上に、マグネシウムと銀を10:1(重量比)で混合した合金で膜厚100nmの電極を形成して有機EL素子を得た。各層は10-6Torrの真空中で、基板温度室温の条件下で蒸着した。この素子の発光特性を表2に示す。本実施例の有機EL素子は全て、最大発光輝度35000(cd/m2)以上の高い輝度特性を示した。同様に比較例として、前記比較化合物A〜Dを成膜して用いる以外は、実施例8と同様の方法で有機EL素子を作製した。この素子の発光特性を表2に併せて示す。いずれの場合も、最大発光輝度、最大発光効率共に、本実施例で作成した素子よりも劣っていることは明らかである。
[0116]
Examples 8 to 3 4 and Comparative Examples 3 to 6
4,4'-Bis [N- (1-naphthyl) -N-phenylamino] biphenyl (α-NPD) is vacuum-deposited on a cleaned glass plate with an ITO electrode to form a hole injection layer with a thickness of 30 nm. Formed. Next, the compounds shown in Table 1 were vacuum-deposited to obtain a light emitting layer having a film thickness of 30 nm. Further, a bis (2-methyl-8-hydroxyquinolinate) (phenolat) gallium complex is vacuum-deposited to form an electron-injected layer having a film thickness of 30 nm, and magnesium and silver are placed on the electron-injected layer in a 10: 1 (weight ratio). ) Was used to form an electrode having a film thickness of 100 nm to obtain an organic EL element. Each layer was deposited in a vacuum of 10-6 Torr under the conditions of substrate temperature room temperature. Table 2 shows the light emission characteristics of this device. All of the organic EL elements of this embodiment showed high brightness characteristics of a maximum emission brightness of 35,000 (cd / m 2 ) or more. Similarly, as a comparative example, an organic EL device was produced by the same method as in Example 8 except that the comparative compounds A to D were formed into a film and used. The emission characteristics of this device are also shown in Table 2. In either case, it is clear that both the maximum emission brightness and the maximum emission efficiency are inferior to the elements produced in this embodiment.

【0117】
【表2】

Figure 2003201472
[0117]
[Table 2]
Figure 2003201472

JP2002305258A 2001-10-26 2002-10-21 Material for organic electroluminescence device and organic electroluminescence device using the same Expired - Fee Related JP3797310B2 (en)

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JP2001328710 2001-10-26
JP2001-328710 2001-10-26
JP2002305258A JP3797310B2 (en) 2001-10-26 2002-10-21 Material for organic electroluminescence device and organic electroluminescence device using the same

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JP2003201472A5 true JP2003201472A5 (en) 2004-12-16
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