JP2003188154A - Plasma processing system and plasma control method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma process system and a plasma control method by which generation and preservation of a plasma can be stably and efficiently performed and the process uniformity using the plasma can be improved. <P>SOLUTION: The plasma process system 26 is provided with a process chamber 7 for performing a process using a plasma, a microwave introducing means 3a-3d for introducing microwaves into the process chamber 7, slot members 15a-15d having several openings which are arranged in the transmission path of the microwave introduced into the process chamber 7 by the microwave introducing means 3a-3d, have long axes and form the transmission path of the microwave and slot control means 16, 17a--17d and 18a-18d by which the area and the position of the openings can be changed in the direction of the long axis of the openings. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma process device and a plasma control method, and more particularly to a plasma process device and a plasma control method using microwaves.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a liquid crystal display device, a semiconductor device or the like, a plasma process device using plasma has been used in a film forming process, an etching process and an ashing process. In such a plasma processing apparatus, it is necessary to generate uniform plasma over the entire surface to be processed in order to perform uniform processing over the entire surface to be processed of the substrate that is the processing target.

In recent years, substrates such as silicon wafers and glass substrates have become larger in the fields of semiconductor devices typified by semiconductor memory devices and liquid crystal display devices. In particular, TFT (Thin Film Tran)
In the case of a (sistor) liquid crystal display device, a rectangular substrate with a large size of 1 meter square may be used as the substrate. Furthermore, in order to improve the takt time, it is preferable to process a large number of substrates at once. Therefore, there is a demand for a plasma processing apparatus capable of improving processing uniformity over the entire surface to be processed of a large rectangular substrate or the entire surface to be processed of a plurality of substrates as described above.

As a conventional technique for improving the uniformity of plasma processing on a large substrate as described above, for example, there is a technique disclosed in Japanese Patent Laid-Open No. 2000-150195.

FIG. 25 shows the above-mentioned Japanese Patent Laid-Open No. 2000-15019.
FIG. 27 is a schematic cross-sectional view of the plasma process apparatus disclosed in Japanese Patent Laid-Open No. 5 (1993) -58, and FIG. 26 is a schematic plan view of the plasma process apparatus shown in FIG. 25. A conventional plasma process apparatus will be described with reference to FIGS. 25 and 26.

As shown in FIGS. 25 and 26, the conventional plasma process apparatus includes a reactor 101 having a bottomed cylindrical shape. A sealing plate 102 made of a dielectric material such as quartz or alumina is arranged above the reactor 101. The inside of the reactor 101 is hermetically sealed by the sealing plate 102. Inside the reactor 101, a substrate holder 112 for holding the substrate 111 is arranged at a position facing the sealing plate 102.

A cover member 103 is arranged above the sealing plate 102 so as to cover the sealing plate 102. The cover member 103 is made of conductive metal and is formed into a substantially circular lid shape. The cover member 103 is fixed to the upper part of the reactor 101. The reactor 1 is provided on the cover member 103.
A tubular waveguide antenna 104 for introducing microwaves is installed inside 01.

A plurality of slots 105 are radially provided in the tubular waveguide antenna 104. Slot 10
The position of 5 is determined in consideration of the position of the abdominal node of the standing wave of the microwave generated in the tubular waveguide antenna 104. Specifically, the slot 105 is arranged at a distance of λ / 2 from the terminal end of the tubular waveguide antenna 104 (where λ represents the wavelength of the microwave standing wave).

Each slot 105 is provided with a shutter 106 made of aluminum for freely changing the opening area of the slot 105. The shutter 106 can be driven in the circumferential direction by an adjusting mechanism including a stepping motor 107, a first gear portion 108, a second gear portion 109 and a support portion 110.

The opening area of the slot 105 can be changed by moving (opening and closing) the shutter 106. Therefore, the electric field strength of the microwave radiated from the slot 105 into the reactor 101 can be adjusted. As a result, the above-mentioned JP-A-2000-150195
In the plasma process apparatus disclosed in the publication, the density of the plasma generated according to the microwave radiated from each slot 105 can be individually controlled, so that the reactor 101
It is said that the density of plasma generated inside can be made uniform in a plane substantially parallel to the surface of the substrate 111.

Further, since the electric field strength of the microwave radiated into the reactor 101 can be increased by reducing the opening area of the slot 105 during plasma generation, the ignition property of the plasma inside the reactor 101 can be increased. It is said that it is possible to improve.

[0012]

However, the above-mentioned Japanese Patent Laid-Open No. 20
The plasma process device disclosed in Japanese Patent Application Laid-Open No. 00-150195 has the following problems.

In the plasma process apparatus disclosed in Japanese Unexamined Patent Publication No. 2000-150195, as shown in FIG. 26, the shutter 106 is inserted from one side of the slot 105 in the short side direction.
Is used to change the opening area. However, in the slot antenna having the slot 105, the slot 10
The change of the magnetic field in the direction of the long side of 5 has a great influence on the characteristics of the antenna. That is, even if the opening amount of the slot 105 (width of the slot 105) is changed in the short side direction of the slot 105, it is difficult to greatly change the characteristics of the antenna. Further, when the opening amount of the slot 105 is changed in the short side direction of the slot 105, even if the shutter 106 is moved very slightly, the opening area of the slot 105 changes relatively large, so that the movement amount of the shutter 106 can be adjusted with high accuracy. Need to control.

As shown in FIGS. 25 and 26, the shutter 1 is provided only on one side of the slot 105 in the short side direction.
In the system in which 06 is arranged and the shutter 106 is moved, the opening area of the slot 105 and the slot 105
The range in which the position of can be changed is limited. For example, changing the opening area and position of the slot 105 while maintaining symmetry with the center line extending in a direction (radial direction) substantially perpendicular to the extension direction of the annular waveguide antenna 104 as shown in FIG. This is difficult in the plasma processing apparatus shown in FIG.

Further, the plasma process apparatus disclosed in Japanese Patent Laid-Open No. 2000-150195 is provided with an annular waveguide type antenna 104 having a circular shape. In this annular waveguide type antenna 104, The waveguides are arranged so as to have a single circular shape. The substrate 111 and the substrate holder 112, which are objects to be processed, are shown to have a size about the inner diameter of the annular waveguide antenna 104.

Here, when a rectangular substrate having a size of about 1 m square is processed by the plasma processing apparatus, it is preferable that the substrate holder has a size equal to or larger than that of the rectangular substrate. Such a rectangular substrate is usually used for manufacturing a liquid crystal display device.

When such a rectangular substrate is processed in a plasma processing apparatus having an annular waveguide as shown in FIGS. 25 and 26, uniform processing is performed on the rectangular substrate. Requires an annular waveguide having a diameter that is at least longer than the length of the diagonal of the rectangular substrate that is the object to be processed. Therefore, in order to increase the size of the substrate to be processed or to process a plurality of substrates at once, it is necessary to increase the size of the annular waveguide and the size of the reactor as the processing chamber. There is.

Further, as the area of the processing chamber increases, the waveguides are arranged in a single circular shape in the plasma process apparatus as shown in FIGS. 25 and 26, so that the center of the inside of the reactor 101. The difference between the electric field strengths of the microwaves becomes large between the portion or the end and the region directly below the annular waveguide antenna. Therefore, in the conventional plasma processing apparatus as shown in FIGS. 25 and 26, when processing a large rectangular substrate, there is a limit in improving the uniformity of processing on the surface of the rectangular substrate.

The present invention has been made in order to solve the above problems, and an object of the present invention is to stably and efficiently generate and maintain plasma, and to perform processing using plasma. A plasma process apparatus and a plasma control method capable of improving the uniformity of

[0020]

A plasma processing apparatus according to one aspect of the present invention is a processing chamber for performing processing using plasma, a microwave introducing unit for introducing microwaves into the processing chamber, and a microwave. A slot member disposed on the microwave transmission path introduced into the processing chamber by the introduction means, having a long axis, and having a plurality of openings forming the microwave transmission path, and the long axis of the opening. Slot control means capable of changing the opening area and position of the opening in the direction.

With this configuration, when the microwave is introduced into the processing chamber, the opening area and the position can be arbitrarily changed along the long axis direction of the opening, so that the processing chamber is opened through the opening. It is possible to smoothly and efficiently change the radiation characteristic of the microwave radiated to the. Note that the characteristics of the microwave radiated into the processing chamber can be greatly changed by changing the opening area or the like in the major axis direction of the opening. Therefore, microwaves can be efficiently introduced into the processing chamber according to the process conditions of the plasma process and the progress of the process, such as when plasma is generated or when the plasma process is in progress. As a result, plasma can be efficiently generated using microwaves in the processing chamber, and stable plasma can be obtained.

Further, regarding the microwave radiated to the processing chamber through each opening, the electric field intensity of the microwave can be controlled by controlling the opening area or the like for each opening. Therefore, it is possible to control the density distribution of the plasma generated by using the microwave inside the processing chamber (it becomes possible to generate the plasma having a substantially uniform density distribution). Therefore, it is possible to improve the in-plane uniformity of the plasma processing on the surface to be processed of the object to be processed.

In the plasma processing apparatus according to the above aspect 1, the slot control means are arranged at both ends of the opening in the long axis direction, respectively, and are slot area control members movable along the long axis direction of the opening. It is preferable to include.

In this case, the opening area of the opening can be changed by moving the slot area control member along the major axis direction of the opening, and the position of the center point of the opening in the major axis direction can be changed. It can be changed arbitrarily. For example, if each of the slot area control members arranged at both ends of the opening is moved in the same direction in the direction away from or toward the center of the opening, the position of the center of the opening is almost the same. The opening area of the opening can be changed without changing. Further, by moving the respective slot area control members in the same direction in the same manner, the position of the center point of the opening can be changed while keeping the opening area of the opening constant. Of course, the opening area of the opening and the position of the center point can be changed at the same time by making a difference in the amount of movement of the slot area control members located at both ends of the opening.

Further, since the slot area control members are arranged at both ends of the opening, the opening area and position of the opening can be maintained while maintaining the symmetry of the opening when viewed from the center point of the opening. Can be changed.

Therefore, it is possible to increase the degree of freedom in setting the conditions of the microwave radiated into the processing chamber through the opening. Therefore, the condition of the microwave radiated to the processing chamber can be controlled more accurately, and thus the stability and uniformity of plasma formed using the microwave in the processing chamber can be improved.

In the plasma processing apparatus according to the above aspect 1, the slot control means collectively opens all of the openings included in the opening group including a part of the plurality of openings. It may be possible to change the area and position.

In this case, the number of parts constituting the slot control means can be reduced and the structure of the slot control means can be simplified as compared with the case where the opening areas and positions of the plurality of openings are individually changed. Therefore, the manufacturing cost of the plasma process apparatus can be reduced. Further, it is possible to flexibly change the condition of the microwave radiated to the processing chamber, as compared with the case where the opening area and the position of all the opening portions are collectively changed. Therefore, the condition of the microwave radiated to the processing chamber can be controlled more accurately. That is, it is possible to improve the stability and uniformity of plasma formed by using microwaves in the processing chamber while suppressing an increase in the manufacturing cost of the plasma process apparatus.

In the plasma processing apparatus according to the above aspect 1, the slot control means may be capable of individually changing the opening area and the position of each of the plurality of openings.

In this case, regarding the microwave radiated into the processing chamber through each opening, the electric field strength of the microwave is accurately controlled by controlling the opening area or the like for each opening so as to meet the process conditions. You can control it well. Therefore, the density distribution of the plasma generated using the microwave inside the processing chamber can be accurately controlled,
A plasma having a substantially uniform density distribution can be generated. Therefore, it is possible to effectively improve the in-plane uniformity of plasma processing on the surface to be processed of the object to be processed by the plasma processing.

The plasma process apparatus according to the above aspect 1 may be provided with a detection means for detecting the state of plasma formed by using microwaves inside the processing chamber.

In this case, since the state of the plasma inside the processing chamber can be detected by the detecting means, the slot control means can be operated based on the state of the plasma. Therefore, while detecting the plasma state during the plasma processing in real time, the slot control means can be operated so as to maintain the uniformity and stability of the plasma based on the data of the plasma state. As a result, the uniformity and stability of plasma can be effectively improved.

In the plasma process apparatus according to the above aspect 1, the detecting means may include a detector for detecting the emission intensity of plasma.

In this case, the emission intensity of plasma is relatively easy to measure, and by using this emission intensity, it is possible to obtain data that reflects the state of plasma relatively accurately. Therefore, it becomes possible to operate the slot control means based on relatively accurate data on the state of the plasma. Therefore, it is possible to obtain plasma having excellent stability and uniformity. Therefore, it is possible to improve the in-plane uniformity of processing on the processing surface of the object to be processed in the plasma process.

In the plasma process apparatus according to the above aspect 1, a plurality of detecting means may be provided in the processing chamber.

In this case, more accurate and detailed data on the state of the plasma (for example, more detailed data on the plasma density distribution) can be obtained. Therefore, the slot control means can be finely operated so as to maintain the uniformity and the stability of the plasma based on the above data indicating the state of the plasma.
As a result, the irradiation amount and irradiation position of the microwave radiated into the processing chamber through the opening can be finely controlled, and thus the uniformity and stability of plasma can be effectively improved. Therefore, the uniformity of the plasma process can be improved.

The plasma process apparatus according to the above aspect 1 may include automatic control means for automatically operating the slot control means on the basis of the information on the state of plasma obtained by the detection means.

In this case, even when the state of the plasma generated inside the processing chamber changes from moment to moment, the opening area and position of the opening are automatically changed based on the information from the detecting means. be able to. Therefore, stable and uniform plasma with a uniform density distribution can be efficiently generated and maintained inside the processing chamber. Therefore, the in-plane uniformity of the plasma process on the surface to be processed of the object to be processed can be effectively improved.

A plasma control method according to another aspect of the present invention is a plasma control method using the plasma process apparatus according to the above aspect 1, wherein the detection means is used.
Based on the measurement step of measuring the state of the plasma formed inside the processing chamber and the information on the state of the plasma measured by the detecting means, the opening area and position of the opening can be determined by operating the slot control means. And an adjusting step for changing

In this way, the state of the plasma inside the processing chamber can be detected in real time by the detecting means, so that the slot control means can be operated based on the state of the plasma. Therefore, for example, in order to stably generate and maintain the plasma, the opening area and the position of the opening can be changed before and after the generation of the plasma so as to match the state of the plasma. In addition, even if the plasma state changes during the plasma process, a stable and uniform plasma is maintained in accordance with the change in the plasma state and by taking into consideration changes over time in process conditions and plasma state. The opening area of the opening and the like can be changed so that the opening can be changed. As a result, the uniformity and stability of plasma can be maintained with high accuracy.

[0041]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts will be denoted by the same reference numerals and the description thereof will not be repeated.

(Embodiment 1) FIG. 1 is a schematic sectional view showing Embodiment 1 of a plasma process apparatus according to the present invention. FIG. 2 is a schematic sectional view taken along line II-II in FIG. FIG. 3 is a partial perspective schematic view of a slot antenna plate that constitutes the plasma process apparatus shown in FIG. FIG. 4 is a schematic plan view for explaining the operation of the slot antenna plate of the plasma process apparatus shown in FIG. FIG. 5 is a schematic diagram showing the arrangement of slots in the slot antenna plate in the plasma processing apparatus shown in FIG. Embodiment 1 of a plasma process apparatus according to the present invention will be described with reference to FIGS.

As shown in FIGS. 1 to 5, the chamber lid 1 is arranged on the opening formed in the upper portion of the chamber main body 2 which constitutes the plasma processing apparatus 26. The chamber body 2 and the chamber lid 1 form a processing chamber.
An O-ring 10 is arranged at the joint between the chamber lid 1 and the chamber body 2. The O-ring 10 seals the joint between the chamber lid 1 and the chamber body 2.
The inside of the processing chamber 7 can be vacuum-sealed.
On the bottom surface of the chamber body 2, a substrate holder 8 is arranged at a position facing the chamber lid 1. A substrate 9 to be processed is placed on the substrate holder 8.

The chamber lid 1 has a plurality of locations (specifically, 2 locations).
Openings are formed at 8 locations (row × 4 columns). The microwave introduction windows 12a to 12 are filled so as to fill the opening.
d and 12 g are buried. Microwave introduction window 12a
12d and 12g are made of a dielectric material such as alumina. Chamber lid 1 and microwave introduction windows 12a to 12d, 12g
An O-ring 11 is installed at the junction with and. This O-ring 11 is for vacuum-sealing the inside 7 of the processing chamber.
Chamber lid 1 and microwave introduction windows 12a to 12d, 12
Seal the joint with g.

A plurality of rectangular waveguides 3a to 3d are arranged on the upper surface of the chamber lid 1 so as to extend substantially parallel to each other. The rectangular waveguides 3a to 3d are connected to a microwave oscillator (not shown) via a waveguide path.
This microwave oscillator, waveguide and rectangular waveguide 3a
The microwave introducing means is constituted by 3d.

Microwave introduction windows 12a-12d, 12g
On the lower side (inside the processing chamber 7 side), four dielectric plates 13 are provided.
a, 13b, and 13d are installed in an arrangement of 2 rows × 2 columns. The dielectric plates 13a, 13b, 13d have two microwave introduction windows (for example, microwave introduction windows 12a, 1).
2b), one for each (for example, dielectric plate 13)
a) It is arranged. Dielectric plates 13a, 13b, 13d
Are held by the dielectric plate holding members 14 respectively.
Is fixed to the lower surface (inside the processing chamber 7 side).

A gas introducing pipe 5 is arranged below the dielectric plates 13a, 13b and 13d. A gas introduction port 6 is provided in a region of the gas introduction pipe 5 located in the center of the processing chamber interior 7.
Are formed. The reaction gas can be introduced into the processing chamber interior 7 from the gas introduction port 6 of the gas introduction pipe 5.

Microwave introduction windows 12a-12d, 12g
And a plurality of slots 2 between the rectangular waveguides 3a to 3d.
The slot antenna plates 15a to 15d made of metal and having 0 formed therein are installed as conductors. Here, FIG.
Rectangular waveguides 3a to 3a of the plasma processing apparatus shown in FIG.
In 3d, the wall surface current flows in the short side direction of the rectangular waveguides 3a to 3d. Therefore, here, slot 20
A rectangular shape having a long axis extending in a direction substantially perpendicular to the short side direction of the rectangular waveguides 3a to 3d (long side direction of the rectangular waveguides 3a to 3d) is used.

Slide grooves 22 are provided on the upper surfaces of the slot antenna plates 15a to 15d as slot members. Inside the slide groove 22, the slide plate 16
Are arranged. The slide plate 16 as a slot area control member is slidable inside the slide groove 22 in a direction substantially parallel to the upper surfaces of the slot antenna plates 15a to 15d. Slot antenna plate 15
The slide plates 16 of a to 15d are respectively provided with the gear portion 18a.
It is slid by being driven by motors 17a to 17d via .about.18d. Slide plate 16, gear part 1
The slot control means is composed of 8a to 18d and the motors 17a to 17d.

On the side wall of the chamber body 2, there is installed a plasma emission intensity detector 19 which is a detecting means for detecting the state of plasma in the processing chamber 7. The plasma emission intensity detector 19 is installed so that its detection portion faces the inside of the processing chamber 7 through a quartz window for observing the inside of the processing chamber (not shown). The plasma emission intensity detector 19 is connected to the control device 25 via a transmission line. The plasma emission intensity detector 19 can relatively accurately detect the state of plasma during plasma processing in real time. The signal from the plasma emission intensity detector 19 is sent to a control device 25 as an automatic control means via a transmission line. Based on the information from the plasma emission intensity detector 19, the control device 25 determines the plasma situation. The control device 25 transmits a control signal to the motors 17a to 17d based on the above information. Then, on the basis of this control signal, the motors 17a-1
By driving 7d, the opening amounts and positions of the slot openings 21a to 21d as openings can be changed as described later. As a result, it is possible to control the radiation state of the microwave radiated into the processing chamber interior 7.

The slot antenna plates 15a to 15d have substantially the same shape. Hereinafter, the slot antenna plates 15a to 15c will be described as an example.
The shape of d will be described. As can be seen from FIG. 2, the slot antenna plate 15c is provided with a plurality of slots 20. As described above, the slide groove 22 is formed around the slot 20. The positions of the slots 20 are such that the distance between the center positions of the slots 20 is nλ / 2.
(N is an integer, λ is a waveguide wavelength of the microwave rectangular waveguides 3a to 3d). The distance between the center position of the slot 20 located in the region closest to the end of the rectangular waveguide 3c in the long side direction and the side wall of the rectangular waveguide 3c is (2n-1) λ / 4. Is set. This is because when a slot antenna plate in which the slot 20 is not formed is arranged at the position of the slot antenna plate 15c, the electric field amplitude of the standing wave generated in the rectangular waveguide 3c becomes maximum in the waveguide long side direction. It means that the slot 20 is arranged at the position. here,
When the centers of the slot openings 21a to 21d are located immediately below the position where the electric field amplitude of the standing wave in the rectangular waveguide 3c shows the maximum value, the microwaves radiated to the inside of the processing chamber 7 are radiated. Highest efficiency. Therefore, slot 20
When the position at which the electric field amplitude has the maximum value changes when the slot antenna plate 15c having the groove is formed is changed, the position of the slide plate 16 is changed so that the slot opening defined by the slot 20 and the slide plate 16 is changed. The opening amount and position of the portion 21 can be changed. Therefore, the center of the slot opening portion 21 can be moved to a position right below the position where the electric field amplitude has the maximum value. Therefore, it is possible to improve the microwave radiation efficiency.

In the plasma process apparatus shown in FIGS. 1 to 5, the slide groove 22 is provided on the upper surface side of the slot antenna plates 15a to 15d and the slide plate 16 is arranged, but the configuration is not limited to this. The slide plate 16 may be arranged on the lower surface side of the slot antenna plates 15a to 15d.

Such slot antenna plates 15a to 1
5d is used for controlling the density distribution of plasma as described below. That is, the microwave oscillated by the microwave oscillator is applied to the rectangular waveguides 3 a to 3 d and the waveguide opening 4.
a to 4d and the microwave introduction window 12a through the slot openings 21 in the slot antenna plates 15a to 15d.
It is transmitted to ~ 12d and 12g. Microwave introduction window 12
The microwaves transmitted to a to 12d and 12g are introduced into the processing chamber interior 7 through the dielectric plates 13a, 13b and 13d. Then, the reaction gas introduced into the processing chamber interior 7 from the gas introduction port 6 of the gas introduction pipe 5 is turned into plasma by this microwave.

At this time, the slot antenna plates 15a to 1
By moving the slide plate 16 installed at 5d, the opening positions of the slot openings 21a to 21d are changed so that the microwave can be efficiently introduced into the processing chamber interior 7. The slide plates 16 are installed at both ends of the slot openings 21a to 21d having the long axis in the long axis direction, and are movable along the long axis direction. Therefore, the opening area and the position can be arbitrarily changed along the long axis direction of the slot openings 21a to 21d. Therefore, the characteristics of the microwave radiated into the processing chamber interior 7 can be greatly changed. Therefore, microwaves can be efficiently introduced into the processing chamber 7 in accordance with process conditions and the like, so that plasma can be efficiently generated, and at the same time, plasma can be stably generated and maintained.

By changing the opening amount (opening area) of the slot openings 21, the amount of microwaves radiated from each slot opening 21 to the inside of the processing chamber 7 can be changed. As a result, the density distribution of plasma can be controlled. Therefore, the uniformity of plasma processing on the surface of the substrate 9 to be processed can be improved.

The structure and operation of the slot antenna plate 15c will be described in more detail below. As shown in FIG. 3, the slide groove 22 is formed in the slot antenna plate 15c as described above. The slide plate 16 is arranged inside the slide groove 22. Inside the slide groove 22, the slide plate 16 is slidable in the arrow direction shown in FIG. The slide plate 16 includes the lower surface of the rectangular waveguide 3c and the slot antenna plate 15c.
It is in close contact with the bottom wall and side wall of the slide groove 22. Therefore, the slot antenna 15c, the slide plate 16 and the rectangular waveguide 3c operate while maintaining electrical continuity. As a result, microwaves do not leak to the outside of the plasma process apparatus 26 from the vicinity of the slot antenna plate 15c.

One slot opening 21 is composed of a slot 20 formed in the slot antenna plate 15c and a pair of slide plates 16 located at both ends of the slot 20 in the long axis direction. The set of slide plates 16 for forming one slot opening 21 includes independent drive systems (gear portion 18c, motor 17c, etc.). Therefore, since the pair of slide plates 16 can move independently of each other, the position of the slot opening 21 and the opening amount (opening area) of the slot opening 21 in the long side direction of the waveguide in the rectangular waveguide 3c can be determined. It can be controlled independently. As a result, the degree of freedom for controlling the opening amount and the position of the slot opening 21 is increased, so that the electric field strength of the microwave radiated into the processing chamber 7 can be accurately controlled.

For example, as shown in FIG. 4, when the position of the slot opening 21b is changed, the slide plate 16a,
16b are both moved in the direction of arrow 28 or in the direction of arrow 27 by the same distance. By doing so, the position of the slot opening 21b in the long side direction of the waveguide can be changed while keeping the opening area of the slot opening 21b constant. When changing the opening amount of the slot opening portion 21b, for example, the slide plate 16a is moved by the arrow 28.
While the slide plate 16b is moved in the direction of arrow 27
Work in the direction of. By doing so, the opening area can be changed while maintaining the symmetry of the slot opening 21b when viewed from the center point of the slot opening 21b. Alternatively, when the slide plates 16a and 16b are moved in the same direction such as the direction shown by the arrow 28 or the direction shown by the arrow 27, the slide plates 16a, 1b
Make a difference in the movement amount of 6b. Even in this case, the opening amount of the slot opening 21b can be changed.

As described above, by independently moving the slide plates 16a and 16b, the opening amount and position of the slot opening 21b can be arbitrarily changed.

Incidentally, the slot antenna plates 15a to 15d
When the slot antenna plates 15a to 15d are installed on the chamber lid 1, the slot 20 formed in FIG.
They may be arranged in a matrix as shown in. Figure 5
Is the substrate holder 8 of the plasma processing apparatus shown in FIG.
The position of the slot when the chamber lid position is viewed from the side is schematically shown.

Here, when a large rectangular substrate is used as the substrate 9 to be processed, if the slots 20 are arranged as shown in FIG. 5, a comparison is made with a plasma process apparatus using an annular waveguide. Then, the microwave can be introduced into the surface of the substrate 9 to be processed (having a rectangular outer shape) substantially uniformly without increasing the size of the apparatus. As a result, the in-plane uniformity of the plasma process on the surface of the rectangular substrate can be improved.

The operation of the plasma process apparatus shown in FIGS. 1 to 5 will be briefly described below. A microwave oscillated from a microwave oscillator (not shown) is a waveguide, rectangular waveguides 3a to 3d, a slot opening 21, a dielectric window 1
2a-12d, 12g and dielectric plates 13a, 13b,
It is radiated to the inside of the processing chamber 7 through the microwave transmission path composed of 13d. Then, the microwave excites the reaction gas introduced into the processing chamber interior 7 from the gas inlet 6. As a result, plasma is generated.

At this time, slide so that the center of the slot opening 21 is located immediately below the region where the electric field amplitude of the standing wave generated inside the rectangular waveguides 3a to 3d increases in the long side direction of the waveguide. Control the position of the plate 16. That is, the center position of the slot opening 21 located at the end is
From the ends of the rectangular waveguides 3a to 3d in the long side direction (2n-
1) While arranging them in a region separated by λ / 4, the distance between the center positions of the adjacent slot openings 21 is set to nλ / 2. By doing so, the microwave can be efficiently radiated into the processing output 7. As a result, plasma can be reliably generated in the processing chamber interior 7.

When plasma is generated, the impedance of the inside of the processing chamber 7 viewed from the slot antenna plates 15a to 15d changes. For this reason, the position where the electric field amplitude of the standing wave formed inside the rectangular waveguide 3 in the long side direction of the waveguide also changes. In this case, the center of the slot opening 21 is moved by moving the slide plate 16.
The position of the slot opening 21 is changed so as to be located immediately below the position (position after change) where the electric field amplitude of the standing wave in the rectangular waveguides 3a to 3d is maximum. As a result, microwaves can be efficiently supplied into the processing chamber interior 7 even after plasma generation. Therefore, the plasma discharge can be stably maintained. Note that FIG.
In the plasma process apparatus 26 shown in FIG. 5, as already described, the slide plates 16 are arranged at both ends of the slot 20 in the long side direction, and the slide plates 16 are substantially arranged in the long side direction of the slot 20. Since it is slidable independently in the parallel direction, the position of the slot opening 21 in the long side direction of the rectangular waveguides 3a to 3d can be arbitrarily set.

The state of the plasma inside the processing chamber 7 also changes depending on the discharge conditions (for example, gas species, gas pressure, composition of the object to be processed, etc.). As a result, the impedance of the processing chamber interior 7 viewed from the slot antenna plates 15a to 15d changes as described above. Therefore, since the propagation state of the microwave also changes, the position where the electric field amplitude becomes maximum in the long side direction of the waveguide also changes. Also in this case, by controlling the position of the slide plate 16 as described above, the position of the slot opening 21 in the long side direction of the waveguide and its opening amount can be changed, so that the standing wave in the long side direction of the waveguide can be changed. It is possible to position the center of the slot opening portion 21 immediately below the position where the electric field amplitude is maximum and optimize the radiation amount of the microwave radiated into the processing chamber interior 7. As a result, microwaves are efficiently processed inside the processing chamber 7
By supplying it to, it is possible to stably generate and maintain plasma discharge.

The conditions (amount of opening and position) of the slot opening 21 may be stored in a database for each process condition. When the process is executed, the slot opening 21 is basically controlled according to the data in the database, and the position of the slide plate 16 is finely adjusted according to the changing plasma state. Good.

Next, in the case of performing control to increase the uniformity of the plasma process by controlling the opening amount of the slot opening 21 and controlling the plasma density distribution in the region facing the upper surface of the substrate 9 to be processed. Will be described.

When a plasma process such as etching or film formation is performed, the in-plane uniformity of the process may be different from the microwave radiation state (reaction gas Supply status). For example, the reaction gas is fed into the processing chamber 7
If it is supplied from the central portion of, the processing speed of the plasma process may decrease at the end portion of the substrate 9 to be processed.
At this time, the position of the slide plate 16 is controlled so that the process processing speed of the plasma process at the end portion of the substrate 9 to be processed becomes approximately the same as the process processing speed in the region located in the central portion of the processing chamber interior 7. It is preferable.

Specifically, in the slot antenna plate 15c shown in FIG. 4, the slot openings 21a, 21d located in the outer peripheral side region 23 (see FIG. 5) which is a region facing the end of the substrate 9 to be processed. The position of the slide plate 16 is controlled so that the opening amount of the slide plate 16 becomes relatively large. On the other hand, regarding the slot openings 21b and 21c arranged in the central region 24 (see FIG. 5) located near the central portion of the processing chamber 7, the slide plate 16 of the slide plate 16 is adjusted so that the opening amount thereof becomes relatively small. Control the position. By doing so, the amount of microwaves radiated into the processing chamber interior 7 from the slot openings 21a and 21d arranged so as to face the end portion of the substrate 9 to be processed becomes relatively large, while A slot opening 21b located so as to face the central portion of the processing substrate 9,
The amount of microwaves radiated from 21c into the processing chamber interior 7 is relatively small. As a result, the processing speed of the process at the end of the substrate 9 to be processed can be relatively increased. Therefore, the uniformity of processing on the surface of the substrate 9 to be processed can be improved. Further, in this way, the structural change of the reaction gas supply unit (gas introduction pipe 5 or the like) for supplying the reaction gas to the inside of the processing chamber 7,
The plasma density distribution can be controlled without making a major modification to the plasma processing apparatus 26.

When controlling the density distribution of plasma as described above, it is not necessary to change the opening amount and position of all the slot openings 21 arranged. For example, depending on the state of the microwave or the plasma density distribution, the opening amount and position are changed for only a part of the slot openings 21 (when there is the slot opening 21 that does not change the opening amount and position). There is also.

In the plasma process apparatus shown in FIGS. 1 to 5, the plasma emission intensity detector 19 is used as described above.
Is installed. Therefore, in the plasma processing apparatus shown in FIGS. 1 to 5, the plasma emission intensity detector 19 detects the start of plasma generation and changes in the plasma state, and the slot opening is performed based on the information from the plasma emission intensity detector 19. A method for automatically adjusting the state of the portion 21 will be described below.

Although there are various types of detectors for detecting the state of plasma, in the plasma process apparatus shown in FIGS. 1 to 5, the plasma emission intensity detector 19 is used as a detector. There is. Such a plasma emission intensity detector 19 is adopted because it is highly convenient.

Before the discharge of plasma is started, as described above, the standing wave formed inside the rectangular waveguides 3a to 3d is located in the vicinity of the position just below the position where the electric field amplitude in the long side direction of the waveguide becomes maximum. The center of each of the slot openings 21 is positioned. As a result, since microwaves can be efficiently radiated into the processing chamber interior 7, it is possible to stably start generation of plasma.

Next, after the plasma is generated, the plasma emission intensity detector 19 is used to confirm the plasma generation in the processing chamber 7 and measure the change in the plasma state as a measuring step. A signal of the measurement result is transmitted from the plasma emission intensity detector 19 to the control device 25 via a transmission line. The control device 25 controls the motors 17a to 17d as described above. That is, by controlling the motors 17a to 17d based on the detection signal (information about the measured plasma state) from the plasma emission intensity detector 19,
An adjustment step of changing the position and opening area of the slot opening 21 is performed. As a result, the state (amount of opening, etc.) of the slot opening 21 can be changed according to the state change of the inside of the processing chamber 7 before and after plasma generation, so that stable plasma can be maintained.

Moreover, after the plasma is generated, the state of the plasma is not always constant. For example, consider a case where an etching process is performed on a laminated film formed on the substrate 9 to be processed. At this time, the physical properties of the object to be processed are apparently changed by sequentially removing the laminated film as the object to be processed by etching from the top. As a result, the generation state and density distribution of ions and radicals that contribute to the plasma process (etching process) also change with time.

In such a case, by measuring the plasma emission intensity by the plasma emission intensity detector 19,
A change in the plasma generation state can be confirmed by measuring the intensity of the emission wavelength of a specific radical or ion in plasma over time and detecting the change. Then, the controller 25 can automatically change the opening amount and the position of the slot opening 21 based on the signal from the plasma emission intensity detector 19. As a result,
By changing the opening amount and position of the slot opening 21 according to the plasma state, the inside of the processing chamber 7
The microwave can be efficiently and stably supplied. Therefore, the discharge can be stably maintained in the processing chamber interior 7. Therefore, the in-plane uniformity of the plasma processing on the surface of the substrate 9 to be processed can be favorably maintained.

Further, in the plasma process apparatus 26 shown in FIGS. 1 to 5, the reaction gas is supplied to the inside of the processing chamber 7 by using the gas introduction pipe 5 as a gas supply means. The gas supply means in the process apparatus is not limited to such a method, and another method may be used. For example, a method of providing a gas supply unit in the chamber body 2 or a method of burying the gas supply unit inside the chamber lid 1 may be used.

Further, the dielectric plate 13 is the same as the dielectric plate 13
By propagating the microwave inside, the inside of the processing chamber 7
However, in the plasma process apparatus according to the present invention, the dielectric plate 13 may not be used. That is, if the uniformity of the plasma process can be maintained without using the dielectric plate 13, the dielectric plate 13 may not be used.

(Embodiment 2) FIG. 6 is a schematic perspective view showing Embodiment 2 of the plasma process apparatus according to the present invention. A second embodiment of the plasma process apparatus according to the present invention will be described with reference to FIG.

As shown in FIG. 6, the plasma processing apparatus 26 basically has the same structure as the plasma processing apparatus shown in FIGS. 1 to 5, but the number and arrangement of the plasma emission intensity detectors 19 are different. ing. That is, in the plasma processing apparatus 26 shown in FIG. 6, a plurality of plasma emission intensity detectors 19 are arranged on the side wall surface of the chamber body 2 so as to be aligned in the horizontal direction.

According to the plasma process apparatus shown in FIG. 6, the same effect as that of the plasma process apparatus shown in FIGS. 1 to 5 can be obtained, and a plurality of plasma emission intensity detectors 19 are installed in this way. Therefore, the inside of the processing chamber 7
The state of the plasma generated by the rectangular waveguides 3a to 3d
Can be detected in more detail in the short side direction and the long side direction. And this plasma emission intensity detector 1
The signal from 9 is transmitted to control device 25 as in the plasma process device according to the first embodiment of the present invention. The controller 25 controls the motors 17a to 17d based on the signal from the plasma emission intensity detector 19 to change the opening amount and the position of each of the slot openings 21. That is, in the region facing the upper surface of the substrate 9 to be processed, the opening amount and position of each slot opening 21 can be changed according to the plasma state in each region facing the slot opening 21. As a result, each part in the region facing the upper surface of the substrate 9 to be processed (for example, the inside of the processing chamber 7)
It is possible to control the microwave radiation condition (for each of the central part and the end part). Therefore, the plasma discharge can be maintained more accurately and stably. Further, since the density distribution of plasma can be controlled so as to be a predetermined state (for example, a substantially uniform state) in a plane substantially parallel to the upper surface of the substrate 9 to be processed, the in-plane uniformity of the plasma process can be improved. It can be increased.

The plasma emission intensity detector 19 may be installed at a position other than the side wall surface of the chamber body 2, for example, in the center of the chamber lid 1 or at other positions. Even in this case, similarly to the plasma process apparatus shown in FIG. 6, it is possible to finely detect the plasma distribution in the processing chamber interior 7. Therefore, accurate plasma control can be performed.

(Third Embodiment) FIG. 7 is a schematic sectional view for explaining a third embodiment of the plasma process apparatus according to the present invention. FIG. 7 corresponds to FIG. FIG. 8 is a schematic perspective view for explaining a slot aperture adjusting mechanism including an upper slot antenna plate and a lower slot antenna plate in the plasma process apparatus shown in FIG. 9 is a schematic plan view of the slot opening adjustment mechanism shown in FIG.
FIG. 10 is a schematic sectional view taken along line XX of FIG. A third embodiment of the plasma process apparatus according to the present invention will be described with reference to FIGS.

As shown in FIGS. 7 to 10, the third embodiment of the plasma process apparatus according to the present invention basically has the same structure as the plasma process apparatus shown in FIGS. The structure of the slot aperture adjusting mechanism including the antenna plate is different. In the plasma processing apparatus shown in FIGS. 7 to 10, the slot opening adjusting mechanism includes an upper slot antenna plate 32 and a lower slot antenna plate 31 having substantially the same shape. Then, by relatively shifting the upper slot antenna plate 32 and the lower slot antenna plate 31 in a direction substantially parallel to the plane where the upper slot antenna plate 32 and the lower slot antenna plate 31 face each other, the slot opening portion 21 The opening area (opening amount) and its position are changed. The upper slot antenna plate 32 and the lower slot antenna plate 31 are driven by the motors 17a and 17b via the gear portion 18.

The upper slot antenna plate 32 and the lower slot antenna plate 31 have slots 2 of substantially the same shape.
9 and 20 are formed so as to have substantially the same arrangement.
As can be seen from FIG. 8, the upper slot antenna plate 32 is arranged so as to overlap the lower slot antenna plate 31. The slot opening 21 is formed by the slot 29 of the upper slot antenna 32 and the slot 2 of the lower slot antenna plate 31.
It is defined by the portion where 0 and 0 overlap.

The lower slot antenna plate 31 and the upper slot antenna plate 32 are relatively displaced in the direction along the long side direction of the slot 20 as shown by arrows 57 and 58 in FIG. The opening amount and position of 21 can be changed. For example, when changing the position of the slot opening 21, either or both of the lower slot antenna plate 31 and the upper slot antenna plate 32 are moved in the direction of arrow 58 or arrow 57.

Specifically, when it is desired to keep the opening area of the slot opening 21 constant without changing, both the lower slot antenna plate 31 and the upper slot antenna plate 32 are in the directions indicated by arrows 57 or 58. Move one of them in the same direction. Further, when both the position and the opening area of the slot opening 21 are changed, either one of the lower slot antenna plate 31 and the upper slot antenna plate 32 is moved in either direction of arrows 57 and 58 at the same time. , Move the other slot antenna plate in the opposite direction to the one slot antenna plate, or in the same direction as the one slot antenna plate so that the movement amount is different from that of the one slot antenna plate. You can do it. By moving the lower slot antenna plate 31 and the upper slot antenna plate 32 in this manner, the opening amount and the position of the slot opening portion 21 can be arbitrarily adjusted.

The lower slot antenna plate 31 and the upper slot antenna plate 32 are kept in metal contact so as to be electrically connected. Further, metal contact is maintained between the lower slot antenna plate 31 and the chamber lid 1 and between the upper slot antenna plate 32 and the rectangular waveguides 3a to 3d to maintain the electrically contacted state. Therefore, when the upper slot antenna plate 32 and the lower slot antenna plate 31 are moved, microwaves do not leak from the slot opening adjusting mechanism to the outside of the plasma process apparatus 26.

By doing so, the same effect as that of the first embodiment of the plasma process apparatus according to the present invention can be obtained. Further, in the plasma process apparatus shown in FIGS. 7 to 10, only uniform control can be performed so that all slot openings 21 have the same opening area and position, but the number of parts of the slot opening adjusting mechanism is small. This is less than in the case of the plasma processing apparatus according to the first embodiment of the present invention. Therefore, the structure of the plasma process apparatus can be simplified, and the manufacturing cost thereof can be reduced.

(Fourth Embodiment) FIG. 11 is a schematic plan view for explaining a fourth embodiment of the plasma process apparatus according to the present invention. FIG. 11 corresponds to FIG. 9. Figure 11
Shows only the slot opening adjusting mechanism in the plasma processing apparatus. Embodiment 4 of the plasma processing apparatus according to the present invention will be described with reference to FIG.

As shown in FIG. 11, the fourth embodiment of the plasma process apparatus according to the present invention basically has the same structure as the third embodiment of the plasma process apparatus according to the present invention, but the slot opening adjusting mechanism is provided. The structure of is different. That is, the slot opening adjusting mechanism of the plasma processing apparatus shown in FIG. 11 has rectangular waveguides 3a to 3d (see FIG. 1) like the upper slot antenna plate 32 and the lower slot antenna plate 31 shown in FIGS. ) And the chamber lid 1 (see FIG. 1), the outer peripheral area slot antenna plate 3 is provided on one lower slot antenna plate 31.
An upper slot antenna plate 32 including 3 and an inner peripheral area slot antenna plate 34 is arranged. The outer peripheral area slot antenna plate 33 and the inner peripheral area slot antenna plate 34 are independently movably arranged. The lower slot antenna plate 31 basically has the same structure as the lower slot antenna plate 31 shown in FIG. Further, slots 29 and 42 are formed in the outer peripheral area slot antenna plate 33 and the inner peripheral area slot antenna plate 34, which form the upper slot antenna plate 32, respectively. In the slot opening adjusting mechanism shown in FIG. 11, the slot opening 21b is defined by the slot 42 formed in the inner peripheral area slot antenna plate 34 and the slot 20 formed in the lower slot antenna plate 31, and the outer peripheral area slot antenna is defined. The slot 29 formed in the plate 33 and the slot 20 of the lower slot antenna plate 31 define the slot opening 21a in the outer peripheral region.

The outer peripheral area slot antenna plate 33 has an opening 30 formed in the center thereof, and the inner peripheral area slot antenna plate 34 is disposed inside the opening. Therefore, the opening amount and the position of the slot opening 21a located in the outer peripheral region and the slot opening 21b located in the inner peripheral region can be independently changed. For example, the slot opening 21 located in the outer peripheral region
Consider a case where it is desired to increase the opening amount of “a” while decreasing the opening area of the slot opening 21b located in the inner peripheral region. In this case, the amount of displacement of the outer peripheral area slot antenna plate 33 relative to the lower slot antenna plate 31 is relatively reduced by relatively reducing the amount of movement of the outer peripheral area slot antenna plate 33. On the other hand, by relatively increasing the movement amount of the inner peripheral area slot antenna plate 34. The position shift amount of the inner peripheral area slot antenna plate 34 with respect to the lower slot antenna plate 31 is relatively increased. Alternatively, when the lower slot antenna plate 31 is also moved, the outer peripheral area slot antenna plate 33 is moved to the same extent as the lower slot antenna plate 31 in the same direction as the lower slot antenna plate 31.
On the other hand, the inner peripheral area slot antenna plate 34 is moved in a direction opposite to the moving direction of the lower slot antenna plate 31. In this way, as shown in FIG. 11, the opening area of the slot opening 21a in the outer peripheral region can be made relatively larger than the opening area of the slot opening 21b located in the inner peripheral region.

According to the plasma process apparatus having such a slot opening adjusting mechanism, the manufacturing cost of the plasma process apparatus is suppressed as in the third embodiment of the plasma process apparatus according to the present invention, and the inner peripheral region and the outer peripheral region are formed. In this way, the opening areas and positions of the openings of the slot openings 21a and 21b can be controlled independently for each region in the plane of the slot antenna plate. As a result, the microwave radiation condition can be adjusted for each region.

FIG. 12 is a schematic plan view of the slot opening adjusting mechanism in the first modification of the plasma process apparatus shown in FIG. FIG. 12 shows only the upper slot antenna plate constituting the slot opening adjusting mechanism. In addition,
The lower slot antenna plate used in combination with the upper slot antenna plate shown in FIG. 12 basically has the same structure as the lower slot antenna plate 31 shown in FIG. A first modification of the fourth embodiment of the plasma processing apparatus according to the present invention will be described with reference to FIG.

As shown in FIG. 12, the slot opening adjusting mechanism of the plasma processing apparatus basically has the same structure as the slot opening adjusting mechanism of the plasma processing apparatus shown in FIG. The figure shows a case where it is further divided into a plurality of parts. That is, the upper slot antenna plate 3 constituting the slot opening adjusting mechanism
2 is a slot antenna plate portion 35 having a plurality of openings 30, 43a to 43d, and openings 30, 43a to 43d.
The inner peripheral region slot antenna plate 34 and the slot antenna plate portions 36 and 37 arranged inside the space 43d are provided.
The slot antenna plate portion 35, the inner peripheral area slot antenna plate 34, and the slot antenna plate portions 36 and 37 are movable independently of each other. In addition, the slot antenna plate portions 36 and 37 are respectively provided with slots 4
4 are formed.

In the slot opening adjusting mechanism shown in FIG. 12, the slots 44 formed in the slot antenna plate portions 36 and 37 and the lower slot antenna plate 3 (not shown) are shown.
The slot 20 formed in 1 defines the slot opening in the outer peripheral region. By independently moving each of the slot antenna plate portions 36 and 37, the opening area and position of the slot opening can be independently changed for each region where the slot antenna plate portions 36 and 37 are arranged. it can.

In this way, by moving the slot antenna plate portions 36 and 37 independently, the slot antenna plate portions 36 and 37 are moved as shown in FIG.
The same effect as that of the plasma process apparatus including the slot opening adjusting mechanism shown in FIG. 11 can be obtained, and the opening area and position of the slot opening portion in the outer peripheral region can be set more freely than the plasma processing apparatus including the slot opening adjusting mechanism shown in FIG. The degree can be increased. As a result, the in-plane uniformity on the surface of the substrate 9 to be processed in the plasma process can be further improved.

FIG. 13 is a schematic plan view of the slot opening adjusting mechanism in the second modification of the plasma process apparatus shown in FIG. FIG. 13 corresponds to FIG. 12 and shows the upper slot antenna plate 32. Referring to FIG. 13, the second embodiment of the plasma process apparatus according to the fourth embodiment of the present invention.
A modified example will be described.

The slot opening adjusting mechanism shown in FIG.
Basically, it has the same structure as the slot opening adjusting mechanism shown in FIG. 12, but the structure of the upper slot antenna plate 32 is different. That is, the upper slot antenna plate 32 of the slot opening adjusting mechanism shown in FIG. 13 has four openings 43e.
A slot antenna plate portion 38 in which ~ 43h is formed,
The slot antenna plate portions 39a to 39d are arranged inside the openings 43e to 43h. Each of the slot antenna plate portions 39a to 39d has a slot 4
4 are formed.

These slot antenna parts 39a-3
9d is arranged under the rectangular waveguides 3a to 3d in the plasma processing apparatus. That is, the slot antenna plate portion 39a is provided for each region where the microwave is incident from each of the rectangular waveguides 3a to 3d.
By independently moving ~ 39d, the area of the slot opening can be changed independently.

Even in this case, the same effect as that of the plasma process apparatus having the slot opening adjusting mechanism shown in FIG. 12 can be obtained.

(Fifth Embodiment) FIG. 14 is a schematic plan view showing a slot opening in a fifth embodiment of the plasma process apparatus according to the present invention. FIG. 15 is a schematic plan view showing a slot antenna plate having a notch, which constitutes the slot opening shown in FIG. 16
FIG. 15 is a schematic plan view showing a slot antenna plate having a slot that is a rectangular opening forming the slot opening shown in FIG. 14. The slot opening in the fifth embodiment of the plasma process apparatus according to the present invention will be described with reference to FIGS.

Slot opening 2 shown in FIGS. 14 to 16.
The plasma process apparatus having No. 1 basically has the same structure as the plasma process apparatus in the first embodiment of the present invention, but the shape of the slot opening 21 is different. That is, the slot openings shown in FIGS. 14 to 16 are slots each having a notch 45 on a slot antenna plate 40 (a member corresponding to the slot antenna plate 15c in FIG. 3) having a slot 20 which is a rectangular opening. Antenna plate 4
1a and 41b (members corresponding to the slide plate 16 in FIG. 3) are arranged. By moving the slot antenna plates 41a and 41b having the cutout portion 45 in the direction indicated by the arrow 46, the opening area and position of the slot opening portion 21 are changed, as in the plasma processing apparatus according to the first embodiment of the present invention. can do. Since the semicircular cutout 45 is formed in the slot antenna plates 41a and 41b, the planar shape of the slot opening 21 is such that the end of the slot 20 in the longitudinal direction is rounded. There is.

The operation of the slot opening adjusting mechanism including the slot openings shown in FIGS. 14 to 16 will be briefly described below. For example, when the opening area of the slot opening 21 is reduced, the slot antenna plates 41a and 41b having the notches as shown in FIG. 17 are moved in the direction indicated by the arrow 59. When the slot opening 21 having the shape as shown in FIG. 17 is moved leftward, as shown in FIG. 18, the slot antenna plates 41a, 41b each having a notch in a direction shown by an arrow 47 are provided. To move. As a result, the position of the slot opening 21 can be changed arbitrarily. Note that FIG. 17 is a schematic plan view showing a state where the opening area of the slot opening portion shown in FIG. 14 is reduced. FIG. 18 is a schematic diagram for explaining an operation when moving the slot opening portion shown in FIG. 17 to the left.

The shape of the cutout portion 45 is not limited to the semicircular shape as shown in FIG. 14, but may be another shape. Further, the shape of the slot 20 is not limited to a rectangular shape, and both ends may have a semicircular shape or an elliptical shape. In this way, the shape of the slot opening 21 can be appropriately changed according to process conditions and the like.

(Sixth Embodiment) FIG. 19 is a schematic plan view showing a slot opening adjusting mechanism in a sixth embodiment of the plasma process apparatus according to the present invention. Embodiment 6 of the plasma process apparatus according to the present invention with reference to FIG.
Will be explained. The sixth embodiment of the plasma process device according to the present invention basically has the same structure as the plasma process device shown in FIG. 7, but the structure of the slot opening adjusting mechanism is different.

As shown in FIG. 19, in the sixth embodiment of the plasma processing apparatus according to the present invention, the slot opening adjusting mechanism includes antenna plates 48a to 48d whose lengths can be changed in the directions shown by arrows 49. Become. The planar shape of the end portions 60 of the antenna plates 48a to 48d is stepwise as shown in FIG. And each arrow 4
By changing the lengths of the antenna plates 48a to 48d in the directions shown in FIG.
The width in the direction of arrow 49 of the slot opening 21 formed as a gap between the ends 60 of the 48d can be changed. The antenna plates 48a to 48d may be expanded or contracted in the same width as shown by an arrow 50, but the expansion and contraction of the respective widths is determined by the antenna plates 48a.
It may be changed every 48d. By doing so, the width of the slot opening 21 can be changed for each region (for each group of the slot opening 21 located at the end of one antenna plate). In addition, the antenna plate 48a-
If the length of the portion of the contact portion of 48d that is substantially parallel to the direction along the arrow 49 is made sufficiently long, the slot opening 21 having the major axis extending in the direction indicated by the arrow 49 can be formed. . The same effect as in the first embodiment of the present invention can be obtained also by the plasma process apparatus including such a slot opening adjusting mechanism.

FIG. 20 is a schematic plan view for explaining a modification of the plasma process apparatus shown in FIG. FIG. 20 shows a plan view of a slot opening adjusting mechanism in a modification of the sixth embodiment of the plasma processing apparatus according to the present invention. A modification of the sixth embodiment of the plasma process apparatus will be described with reference to FIG.

As shown in FIG. 20, the slot opening adjusting mechanism comprises a plurality of strip-shaped antenna plates 51 and 52.
A plurality of strip-shaped antenna plates 51 and 52 are combined in a grid pattern. A slot opening 21 is formed as a gap between the antenna plates 51 and 52.

21 and 22 are schematic sectional views of a strip-shaped slot antenna plate in the plasma processing apparatus shown in FIG. As shown in FIGS. 21 and 22, the antenna plate 51 (see FIG. 20) is the antenna plate member 5
It consists of 1a and 51b. The antenna plate 51 is configured such that the antenna plate members 51a and 51b are relatively displaced in the direction indicated by the arrow 56, so that the width 53 thereof can be expanded and contracted. Similarly, the antenna plate 52 (see FIG. 20)
Also, the width 54 (see FIG. 20) can be expanded and contracted in the direction indicated by the arrow 55 (see FIG. 20). Therefore, by arbitrarily changing the width 54 of the antenna plate 52, the opening area and position of the slot opening 21 (see FIG. 20) can be arbitrarily changed in the long axis direction. In addition, the width 5 of the antenna plate 51 (see FIG. 20)
By arbitrarily changing 3 (see FIG. 20), it is possible to arbitrarily change the opening area and position of the slot opening 21 even in the minor axis direction.

The same effect as the plasma process apparatus according to the first embodiment of the present invention can be obtained also by the plasma process apparatus having such a slot opening adjusting mechanism.

(Embodiment 7) FIG. 23 is a schematic diagram for explaining Embodiment 7 of the plasma process apparatus according to the present invention. The seventh embodiment of the plasma process apparatus according to the present invention basically has the same structure as the third embodiment of the plasma process apparatus according to the present invention, but the arrangement of the slots formed in the slot antenna plate is different. Figure 2
Reference numeral 3 shows the arrangement of slots in the slot antenna plate. The slot antenna plate 63 shown in FIG.
Correspond to the upper slot antenna plate 32 and the lower slot antenna plate 31 shown in FIG. Embodiment 7 of the plasma processing apparatus according to the present invention will be described with reference to FIG.

As shown in FIG. 23, the slot 20 in the slot antenna plate 63 is provided in the first to third embodiments of the present invention.
Slot 2 instead of matrix as shown in 6
0s are arranged in a zigzag pattern (staggered pattern). In this case, it is preferable that the distance between the slots 20a and 20b aligned along a predetermined direction indicated by the arrow 61 is λ / 2 (λ is the wavelength of the microwave used in the rectangular waveguide). The slots 20c that are adjacent to each other in the direction substantially perpendicular to the alignment direction of the slots 20a and 20b and are aligned along the direction indicated by the arrow 62 may be arranged at a position shifted by λ / 4 from the position of the slot 20b. preferable.

By arranging the slots 20a and 20b at an interval of λ / 2, it is possible to supply high frequency waves of the same phase to the inside of the processing chamber 7. Also, the slots 20a, 2
0b is included (a slot group aligned along the direction indicated by arrow 61) and a slot group formed adjacent to the slot group (aligned along the direction indicated by arrow 62, and slot 20c is Slot group included)
By arranging and are shifted by λ / 4 from each other, it is possible to prevent the electric field strength of the microwave from dropping between the slots 20a and 20b. As a result, a uniform plasma can be generated inside the processing chamber, so that a plasma process with high in-plane uniformity can be performed.

FIG. 24 is a schematic plan view showing a modification of the plasma processing apparatus shown in FIG. The slot antenna plate 63 shown in FIG. 24 differs from the slot antenna plate 63 shown in FIG. 23 in the arrangement of the slots 20.

As shown in FIG. 24, in the slot antenna plate 63, the slots 20 are arranged in a diagonal grid pattern. With such an arrangement, circularly polarized waves can be generated inside the processing chamber. Then, within the range where such a circularly polarized wave is generated, the microwave can be uniformly supplied to the inside of the processing chamber. Therefore, since uniform plasma can be generated, the in-plane uniformity of the plasma process can be improved.

In the conventional example, as the size of the processing chamber was increased, there were cases where there were no slots in the central portion of the processing chamber or the end portion (corner portion) of the processing chamber. Therefore, the difference in the electric field strength of the microwave is large depending on the area inside the processing chamber. However, if the slot antenna plate 63 as shown in FIGS. 23 and 24 is used, the slots 20 can be evenly distributed and arranged in the processing chamber.
It is possible to reduce the difference in the electric field strength of the microwave within the processing chamber between the regions (the uniformity of the electric field strength can be improved). Therefore, the distribution of plasma formed inside the processing chamber can be made uniform to some extent. Therefore, it is possible to realize the basic conditions that can easily perform uniform plasma processing on a large rectangular substrate.

Further, the adjustment range of the opening area and the position of the slot 20 can be made small in advance (even if the opening area and the position of the slot 20 are not largely changed, plasma processing can be performed to some extent uniform. ing).
Therefore, it is possible to easily control the opening area of the slot 20 and the like so as to correspond to each process condition for each plasma process. Moreover, it is possible to easily cope with an instantaneous change in the plasma state.

The embodiments disclosed this time are to be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above-described embodiments but by the scope of the claims, and is intended to include meanings equivalent to the scope of the claims and all modifications within the scope.

[0120]

As described above, according to the present invention, since the radiation characteristic of the microwave radiated to the processing chamber can be arbitrarily changed, the radiation characteristic of the microwave can be adjusted according to the conditions of the plasma process. Can be adjusted. Therefore, since stable plasma can be formed, the in-plane uniformity on the surface of the substrate to be processed in the plasma process can be improved.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing a first embodiment of a plasma processing apparatus according to the present invention.

FIG. 2 is a schematic sectional view taken along line II-II in FIG.

3 is a schematic partial perspective view of a slot antenna plate that constitutes the plasma processing apparatus shown in FIG.

FIG. 4 is a schematic plan view for explaining the operation of the slot antenna plate of the plasma process apparatus shown in FIG.

5 is a schematic diagram showing the arrangement of slots in a slot antenna plate in the plasma processing apparatus shown in FIG.

FIG. 6 is a schematic perspective view showing a second embodiment of the plasma processing apparatus according to the present invention.

FIG. 7 is a schematic cross-sectional view for explaining a third embodiment of the plasma processing apparatus according to the present invention.

8 is a schematic perspective view for explaining a slot opening adjusting mechanism including an upper slot antenna plate and a lower slot antenna plate in the plasma processing apparatus shown in FIG.

9 is a schematic plan view of the slot opening adjusting mechanism shown in FIG.

FIG. 10 is a schematic sectional view taken along line XX of FIG.

FIG. 11 is a schematic plan view for explaining the fourth embodiment of the plasma processing apparatus according to the present invention.

FIG. 12 is a schematic plan view of a slot opening adjustment mechanism in the first modification of the plasma process apparatus shown in FIG.

FIG. 13 is a schematic plan view of a slot opening adjusting mechanism in the second modification of the plasma process apparatus shown in FIG.

FIG. 14 is a schematic plan view showing a slot opening portion in a fifth embodiment of the plasma processing apparatus according to the present invention.

15 is a schematic plan view showing a slot antenna plate having a notch portion, which constitutes the slot opening portion shown in FIG.

16 is a schematic plan view showing a slot antenna plate having a slot that is a rectangular opening forming the slot opening shown in FIG.

FIG. 17 is a schematic plan view showing a state where the opening area of the slot opening portion shown in FIG. 14 is reduced.

FIG. 18 is a schematic diagram for explaining an operation when moving the slot opening portion shown in FIG. 17 to the left.

FIG. 19 is a schematic plan view showing a slot opening adjusting mechanism in the sixth embodiment of the plasma process apparatus according to the present invention.

20 is a schematic plan view for explaining a modification of the plasma process device shown in FIG.

21 is a schematic sectional view of a strip-shaped slot antenna plate in the plasma processing apparatus shown in FIG.

22 is a schematic sectional view of a strip-shaped slot antenna plate in the plasma processing apparatus shown in FIG.

FIG. 23 is a schematic diagram for explaining the seventh embodiment of the plasma process device according to the present invention.

FIG. 24 is a schematic plan view showing a modification of the plasma process apparatus shown in FIG. 23.

FIG. 25 is a schematic cross-sectional view of the plasma process apparatus disclosed in Japanese Patent Laid-Open No. 2000-150195.

FIG. 26 is a schematic plan view of the plasma processing apparatus shown in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 chamber lid, 2 chamber body, 3a-3d rectangular waveguide, 4a-4d waveguide opening, 5 gas introduction pipe, 6
Gas inlet, 7 processing chamber interior, 8 substrate holder, 9
Substrate to be processed, 10, 11 O-ring, 12a to 12d,
12g microwave introduction window, 13a, 13b, 13d
Dielectric plate, 14 dielectric plate holding member, 15a to 15d,
40, 41a, 41b, 63 slot antenna plates, 1
6, 16a, 16b slide plate, 17a to 17d motor, 18a to 18d gear part, 19 plasma emission intensity detector, 20, 29, 42, 44 slots, 21,
21a to 21d slot openings, 22 slide grooves,
23 outer peripheral area, 24 central area, 25 control device,
26 plasma process equipment, 27, 28, 46, 4
7,49,50,55-59,61,62 Arrows, 3
0, 43a to 43d openings, 31 lower slot antenna plate, 32 upper slot antenna plate, 33 outer peripheral area slot antenna plate, 34 inner peripheral area slot antenna plate, 3
5 to 38, 39a to 39d slot antenna plate portion,
45 notch part, 48a-48d, 51, 52 antenna plate, 51a, 51b antenna plate member, 53, 54
Width, 60 edges.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Takamitsu Tadera             22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka             Inside the company (72) Inventor Tatsushi Yamamoto             22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka             Inside the company (72) Inventor Masaki Hirayama             05 Aoba, Aramaki, Aoba-ku, Sendai City, Miyagi Prefecture Tohoku University             Graduate School of Engineering (72) Inventor Tadahiro Omi             2-1-17 Yonegabukuro, Aoba-ku, Sendai City, Miyagi Prefecture             301 F term (reference) 5F004 AA01 BB11 BB18 BC03 CA07                       CA09 CB01 CB02

Claims (9)

[Claims] 1. A processing chamber for performing processing using plasma, microwave introducing means for introducing microwaves into the processing chamber, and transmission of microwaves introduced into the processing chamber by the microwave introducing means. A slot member arranged on the path, having a long axis and having a plurality of openings forming the microwave transmission path; and an opening area and a position of the opening in the long axis direction of the opening. And a slot control means capable of changing the following. 2. The slot control means includes slot area control members that are respectively arranged at both ends of the opening in the major axis direction and are movable along the major axis of the opening. Plasma process equipment. 3. The slot control means collectively changes the opening area and the position of all of the openings included in the opening group with respect to the opening group including a part of the plurality of openings. It is possible to do, Claim 1 or 2
The plasma process apparatus according to. 4. The plasma process apparatus according to claim 1, wherein the slot control means is capable of individually changing the opening area and the position of each of the plurality of openings. 5. The plasma process apparatus according to claim 1, further comprising a detection unit that detects a state of plasma formed by using the microwave inside the processing chamber. 6. The plasma processing apparatus according to claim 5, wherein the detection means includes a detector that detects the emission intensity of plasma. 7. The plasma process apparatus according to claim 5, wherein the processing chamber is provided with a plurality of the detection means. 8. The automatic control means according to claim 5, further comprising an automatic control means for automatically operating the slot control means on the basis of the information about the state of the plasma obtained by the detection means. Plasma process equipment. 9. A plasma control method using the plasma process apparatus according to claim 5, wherein a state of plasma formed inside the processing chamber using the detection means. And a step of adjusting the opening area and position of the opening by operating the slot control means based on information about the state of the plasma measured by the detection means. , Plasma control method.