JP2003179107A - Inspection system and inspection method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspection system and an inspection method, where an inspection result and an inspection frequency are well balanced with each other by automatically changing the inspection frequency, corresponding to the state of the inspection result. <P>SOLUTION: A decision unit 50 receives data RA to RC, which are outputted as inspection results from inspection devices 1A to 1C and has a function to determine the inspection rate of lots (inspection lot) to be inspected hereafter and the inspection rate of semiconductor wafers (inspection semiconductor wafer) contained in each lot and to be inspected hereafter by data processing carried out on the basis of the data RA to RC. That is, the decision unit 50 has a function to automatically change the inspection frequency of the lots and the wafers on the basis of the past inspection results. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection system and an inspection method, and more particularly to a semiconductor wafer defect inspection system and a defect inspection method using the system.

[0002]

2. Description of the Related Art FIG. 10 is a block diagram conceptually showing a conventional semiconductor inspection system. The conventional semiconductor inspection system includes a plurality of inspection devices 101A to 101C and a production management device 102. In FIG. 10, typically 3
Only one inspection device 101A-101C is shown. The inspection apparatus 101A executes a semiconductor wafer inspection (hereinafter referred to as "inspection process A") after a semiconductor manufacturing process (hereinafter referred to as "manufacturing process A") is performed by a first semiconductor manufacturing apparatus (not shown). It is a thing.
Further, in the inspection device 101B, the inspection process A is completed,
After a semiconductor manufacturing process (hereinafter referred to as “manufacturing process B”) is executed by a second semiconductor manufacturing apparatus (not shown), a semiconductor wafer is inspected (hereinafter referred to as “inspection process B”).
Referred to as). Furthermore, the inspection device 1
In 01C, after the inspection process B is completed and the semiconductor manufacturing process (hereinafter referred to as “manufacturing process C”) is executed by the third semiconductor manufacturing apparatus (not shown), the semiconductor wafer is inspected (hereinafter referred to as “inspection process C”). This is performed. For example, in the inspection processes A to C, a defect inspection for inspecting a semiconductor wafer for defects is performed.

By the way, in the process of manufacturing semiconductor devices, various processes are often carried out for a plurality of semiconductor wafers as one unit (lot) due to reasons such as production management. In the above example, the manufacturing processes A to C are executed for all lots, but the inspection processes A to C are executed.
Is not performed for all lots, but only for some lots. Which lot the inspection processes A to C are to be executed is designated by the operator and is comprehensively managed by the production management apparatus 102.

11 and 12 show lots L1 and L, respectively.
It is a figure which shows the process control table regarding 2. These process management tables are managed by the production management device 102.
The process management table is provided with items of “whether execution is required”, “process”, and “completion of completion”. In the item “process”, the manufacturing processes A to C and the inspection processes A to C are described in advance in the order of execution, for example. In the item of "presence or absence of completion", "not yet" is displayed in the initial state. In the item of “necessity of execution”, an operator's input operation using an input device such as a keyboard indicates “necessary” or “no” for each inspection process A to C (also called “flag”). Is entered in advance. In the examples shown in FIGS. 11 and 12, the lot L1 is a lot in which the inspection processes A to C should be executed, and the lot L2 is a lot in which the inspection processes A to C are not executed. With reference to FIG. 10, the production management apparatus 102 is configured as shown in FIGS.
Based on the contents of the process control table shown in FIG. 1, information regarding the lots designated as “necessary” for execution of the inspection processes A to C is used as data SA to SC, and the inspection devices 101A to 101A to 10C are used.
Enter in 1C.

Further, the inspection processes A to C are not executed on all the semiconductor wafers included in the lot designated as "necessary", but a part of the inspection processes A to C is executed. Only performed on semiconductor wafers. The number of semiconductor wafers (or which semiconductor wafers) in the lot to execute the inspection processes A to C is designated by the operator and is comprehensively controlled by the production control device 102. With reference to FIG. 10, the production management apparatus 102 provides information on the number of semiconductor wafers in the lot to execute each of the inspection processes A to C as data TA to T.
It is input as C into each of the inspection devices 101A to 101C. The data TA to TC may include information on other inspection conditions in addition to the information on the number of semiconductor wafers.

Referring to FIG. 10, inspection devices 101A-1
When the inspection processes A to C in 01C are completed, the inspection completion signals UA to UC are output from the inspection devices 101A to 101C, respectively, and are input to the production control device 102. Although not shown in FIG. 10, when the manufacturing processes A to C in the first to third semiconductor manufacturing apparatuses are completed, inspection completion signals are output from the first to third semiconductor manufacturing apparatuses, respectively. , Is input to the production control device 102. Figure 1
With reference to Nos. 1 and 12, when the production control device 102 receives these inspection completion signals, the production control device 102 sequentially changes the display of the item “presence / absence of completion” of the process control table from “not completed” to “completed”.

[0007]

As described above, in the conventional semiconductor inspection system, it is necessary to determine in advance which lot of all lots the inspection process should be executed (hereinafter, also referred to as "lot frequency"). Specified by the person
It is managed by the production management device 102. Further, the number of semiconductor wafers out of all the semiconductor wafers included in the lot to be subjected to the inspection process (hereinafter also referred to as “wafer frequency”) is designated in advance by the operator, and the production management apparatus It is managed by 102. Therefore, the lot frequency and the wafer frequency (hereinafter collectively referred to as “inspection frequency”) are always constant unless changed by an operator's input operation, and there is a problem that they do not correspond to inspection results. It was

For example, when good inspection results are continuously obtained, it is desirable to reduce the inspection frequency in order to shorten the total production required period of a plurality of lots, and conversely, inferior inspection results can be obtained. If obtained continuously,
It is desirable to increase the inspection frequency for use in cause analysis. However, since the conventional semiconductor inspection system does not have a function of automatically changing the inspection frequency according to the status of the inspection result, for example, regarding the lot frequency, the item "whether or not to execute" in the process control table should be rewritten. There is no choice but to deal with.

The present invention has been made to solve such a problem, and the inspection frequency and the inspection frequency are corresponded by automatically changing the inspection frequency according to the situation of the inspection result. The purpose is to obtain an inspection system and an inspection method.

[0010]

[Means for Solving the Problems] Claim 1 of the present invention
The inspection system described in 1. inputs the inspection device that executes the inspection of the inspection target and the result data regarding the result of the inspection from the inspection device, and based on the result data, the inspection that should perform the inspection thereafter among the plurality of inspection targets. And a determination unit that determines the target ratio by data processing.

The inspection system according to a second aspect of the present invention is the inspection system according to the first aspect, in which the inspection target is a semiconductor wafer, and the determining unit inspects a plurality of lots. It is characterized in that the ratio of the inspection lot containing the semiconductor wafer to be executed is determined.

The inspection system according to a third aspect of the present invention is the inspection system according to the second aspect, wherein the determining unit is a value that represents the result data regarding the inspection lot based on the result data. And a data processing unit that includes a data calculation unit that calculates a lot value and a determination unit that determines the proportion of inspection lots among a plurality of lots based on the lot value and a predetermined determination condition table. It is a feature.

The inspection system according to a fourth aspect of the present invention is the inspection system according to the second aspect, wherein the determination unit further includes a plurality of semiconductor wafers included in each lot. The method is characterized in that the proportion of inspection wafers to be inspected is determined.

The inspection system according to a fifth aspect of the present invention is the inspection system according to the fourth aspect, wherein the deciding unit represents the result data for the inspection lot based on the result data. Based on the data calculation unit that calculates the lot value and the lot value and the predetermined determination condition table, the ratio of the inspection lot of the plurality of lots and the ratio of the inspection wafer of the plurality of semiconductor wafers are calculated. It is characterized by having a data processing device including a determination unit for determination.

The inspection system according to a sixth aspect of the present invention is the inspection system according to the first aspect, wherein the inspection target is a semiconductor wafer, and the determination unit includes a plurality of determination units included in a lot. It is characterized in that the ratio of inspection wafers to be inspected among the semiconductor wafers is determined.

[0016] The inspection system according to claim 7 of the present invention is the inspection system according to claim 6, wherein the determination unit includes a semiconductor wafer on which inspection is performed based on the result data. A data calculation unit that calculates a lot value that is a value representing the result data regarding the lot, and a determination unit that determines the proportion of the inspection wafers among the plurality of semiconductor wafers based on the lot value and a predetermined determination condition table. And a data processing device including

An inspection system according to claim 8 of the present invention is the inspection system according to any one of claims 3, 5 and 7, wherein the inspection device is on a semiconductor wafer. It includes first and second defect inspection devices for inspecting defects in this order, and the result data is a first data regarding a position of the defect in the wafer surface of the semiconductor wafer discovered by the defect inspection by the first defect inspection device. Coordinate data,
And a second coordinate data regarding the position of the defect in the wafer surface of the semiconductor wafer, which is found by the defect inspection by the second defect inspection device, It is characterized by further comprising a data processing section for inputting result data obtained by subtracting the one overlapping the first coordinate data from the second coordinate data to the data calculation section.

According to a ninth aspect of the present invention, an inspection method includes: (a) a step of executing an inspection of an inspection target by an inspection apparatus; and (b) inputting result data regarding an inspection result from the inspection apparatus. And a step of determining, by data processing, a ratio of the inspection target to be subsequently subjected to the inspection based on the result data.

The inspection method according to a tenth aspect of the present invention is the inspection method according to the ninth aspect, wherein the inspection object is a semiconductor wafer, and in the step (b), a plurality of lots are processed. Among them, the ratio of the inspection lot including the semiconductor wafer to be inspected is determined.

Further, the inspection method according to claim 11 of the present invention is the inspection method according to claim 10, wherein in the step (b), a plurality of semiconductor wafers included in each lot are further included. Among them, the ratio of inspection wafers to be inspected is determined.

The inspection method according to a twelfth aspect of the present invention is the inspection method according to the ninth aspect, wherein the inspection target is a semiconductor wafer, and in the step (b), it is included in the lot. The ratio of inspection wafers to be inspected among a plurality of semiconductor wafers to be inspected is determined.

The inspection method according to a thirteenth aspect of the present invention is the inspection method according to the ninth aspect, wherein the inspection target is a semiconductor wafer, and the inspection device detects a defect on the semiconductor wafer. The first and second defect inspection devices for inspecting in order are included, and the result data is the first coordinate data regarding the position of the defect in the wafer surface of the semiconductor wafer discovered by the defect inspection by the first defect inspection device. , Second
And the second coordinate data on the position of the defect in the wafer surface of the semiconductor wafer, which is found by the defect inspection by the defect inspection apparatus of 1. The result data obtained by subtracting the coordinate data that overlaps the first coordinate data is used.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. 1 is a block diagram conceptually showing a semiconductor inspection system according to a first embodiment of the present invention. The semiconductor inspection system according to the first embodiment includes a plurality of inspection devices 1A to 1C and a determination unit 50. In FIG. 1, typically three inspection devices 1A to
Only 1C is shown. The inspection apparatus 1A performs an inspection of a semiconductor wafer (hereinafter referred to as “inspection process”) after a semiconductor manufacturing process (hereinafter referred to as “manufacturing process A”) is executed by a first semiconductor manufacturing apparatus (not shown) (for example, a CVD apparatus or an etching apparatus). "A"). Further, the inspection apparatus 1B inspects a semiconductor wafer (hereinafter, referred to as “inspection”) after the inspection process A is completed and a semiconductor manufacturing process (hereinafter referred to as “manufacturing process B”) is executed by a second semiconductor manufacturing apparatus (not shown). Process B ”). Further, the inspection apparatus 1C inspects a semiconductor wafer (hereinafter referred to as “inspection”) after the inspection process B is completed and a semiconductor manufacturing process (hereinafter referred to as “manufacturing process C”) is executed by a third semiconductor manufacturing apparatus (not shown). Process C "). For example, in the inspection processes A to C, a defect inspection for inspecting a semiconductor wafer for defects (such as adhesion of foreign matter on the wafer surface) is performed.

Further, the decision unit 50 includes the inspection devices 1A to 1C.
The data RA to RC relating to the inspection results are input respectively, and based on the data RA to RC, the ratio of lots (inspection lots) to be subjected to subsequent inspections among a plurality of lots, and the plurality of lots included in each lot. The semiconductor wafer has a function of determining the ratio of semiconductor wafers (inspection wafers) to be subjected to subsequent inspections by data processing. That is, the determination unit 50 has a function of automatically changing the subsequent lot frequency and wafer frequency based on the past inspection results. In order to realize such a function, the determination unit 50 includes the production management device 2 and the data processing device 3.

The production control device 2 is similar to the conventional production control device 102 shown in FIG. 10, and the inspection completion signals UA to UC input from the inspection devices 1A to 1C and the first to third items.
Based on the inspection completion signal input from the semiconductor manufacturing equipment of the above, "presence or absence of completion" of the process control table shown in FIGS.
Manage items. Further, the production control device 2 uses the information relating to the lot frequency as the data SA to SC and inspects the inspection device 1A.
.. to 1C, and information on the wafer frequency is input to the inspection devices 1A to 1C as data TA to TC. Similar to the conventional semiconductor inspection system, the initial value of the lot frequency is set to a desired value by the operator at the time of initial setting of the system according to the combination of the product type and the inspection process.

The data processing device 3 includes inspection devices 1A to 1C.
Based on the data RA to RC related to the inspection result input from the above, data DmA to DmC related to the lot frequency and data DnA to DnC related to the wafer frequency are generated and output. Then, the production control device 2 is connected to the data processing device 3
The data SA to SC and TA to TC are automatically updated and output based on the data DmA to DmC and DnA to DnC input from

In the following description, the data SA to SC, the data TA to TC, the inspection completion signals UA to UC, and the data RA to.
RC, data DmA to DmC, and data DnA to Dn
When C is comprehensively represented, it is represented as data S, data T, inspection completion signal U, data R, data Dm, and data Dn, respectively. Further, when the inspection devices 1A to 1C are comprehensively represented, they are referred to as the inspection device 1.

FIG. 2 is a block diagram showing a concrete configuration of the production control device 2. The production control device 2 is the inspection device 1.
And a management unit 21 having an input connected to each output of the data processing device 3, and an input connected to an output of the management unit 21,
And a transmitter 22 having an output connected to the input of the inspection apparatus 1, and a storage unit 23 having a wafer frequency setting table 24 stored therein and having an output connected to the input of the management unit 21.

FIG. 3 is a block diagram showing a specific configuration of the data processing device 3. The data processing device 3 includes the inspection result 35, the calculation formula table 36, and the determination condition table 3.
7 is stored and has a storage unit 31 having an input connected to the output of the inspection apparatus 1, a data calculation unit 32 having an input connected to the output of the storage unit 31, and each of the storage unit 31 and the data calculation unit 32. Judgment unit 33 having an input connected to the output
And a transmission unit 34 having an input connected to the output of the determination unit 33 and an output connected to the input of the production control device 2.

FIG. 4 is a diagram showing an example of the wafer frequency setting table 24. A plurality of (three types in the example shown in FIG. 4) wafer frequency conditions J to L are provided according to the combination of the type and the inspection process. For example, when the wafer frequency condition K is set for the inspection process B of the product type H1, the inspection process B is executed for 13 semiconductor wafers out of 25 semiconductor wafers included in one lot. Become. At the time of initial setting of the system, the minimum frequency wafer frequency condition J is set regardless of the combination of product type and inspection process.

FIG. 5 is a diagram showing an example of the inspection result 35. In FIG. 5, among the 25 semiconductor wafers included in one lot, the wafer numbers 3 are W01, W11, and W21.
The inspection result when the defect inspection is performed on one semiconductor wafer is shown. For example, the lot number is L00
It is shown that 29 defects were found regarding the semiconductor wafer with the wafer number W11 in the lot of.

FIG. 6 is a diagram showing an example of the judgment condition table 37. In the determination condition table 37, non-standard determination, SPC (Static Process Control) determination, and Cp are performed in the order of defect determination having a high degree of defect fatality and requiring immediate countermeasures.
Three types of determination conditions for (process index) determination are described.

In the non-standard judgment, it is judged that the number of defects is 30 or less, and that the number of defects is 31 or more is non-standard. When the number of defects is 31 to 49, m =
3, when n = K is set and the number of defects is 50 or more,
It is set to m = 1 and n = L. “M” is a value related to the lot frequency, and means that a lot with a remainder of zero when the lot number is divided by m is an inspection lot. The initial value of m is set to a value of 4 or more by the operator according to the combination of the product type and the inspection process. “N” is a value related to the wafer frequency, for example, n =
In the case of K, the wafer frequency setting table 24 shown in FIG.
It means that the wafer frequency condition K is adopted.

In the SPC determination, the value of m is decremented by 1 when there is a continuous upward trend of 7 points or when Ucl is exceeded. Moreover, in the Cp determination, the Cp value is 1.33.
If the Cp value is greater than or equal to 1 and less than or equal to 1.33, the value of m is maintained and C
When the p value is smaller than 1, the value of m is subtracted by 1.

FIG. 7 is a flow chart for explaining the operation of the data processing device 3. The operation of the data processing device 3 will be described below with reference to FIGS. 3 and 7.
In step SP1, the data calculation unit 32 inputs the data R regarding the inspection result 35 and the data D2 regarding the calculation formula table 36 from the storage unit 31. In the calculation formula table 36, various calculation formulas such as an average value and a median value are described in a table format, and it is possible for an operator to select which calculation formula to use. Then, the data calculation unit 32 calculates a value (lot value) that represents a plurality of inspection results regarding the lot based on the input data R and data D2. When the average value is adopted, for example, the lot value of the lot with the lot number L00 shown in FIG. 5 is “28”. The data calculator 32 outputs the calculated lot value as data D3.

Next, the determination unit 33 inputs the data D3 from the data calculation unit 32 and the data D4 related to the determination condition table 37 from the storage unit 31. Then, in step SP2, it is determined whether the lot value is within the standard or outside the standard. If it is determined in step SP2 that it is out of the standard (NG), step S
Proceeding to P3, the value of m and the value of n are changed according to the conditions shown in FIG. 6, and the information is input to the transmission unit 34 as data Dm and Dn. As a result, in subsequent inspections, the lot frequency and the wafer frequency are both corrected to increase.

On the other hand, if it is determined in step SP2 that the standard is satisfied (OK), the process proceeds to step SP4.
The determination unit 33 subsequently makes an SPC determination. Data R relating to the inspection results of the past several times (for example, the past 20 lots) related to the same inspection process are accumulated in the storage unit 31, and the determination unit 33 executes the SPC determination based on these accumulated data. To do. Continuous 7 in step SP4
If it is determined that there is a tendency to increase the points or if Ucl is exceeded (NG), the process proceeds to step SP5, the value of m is subtracted according to the conditions shown in FIG. 6, and the information is sent to the transmission unit 34 as data Dm. Is entered. As a result, in subsequent inspections, the lot frequency is corrected to increase. However, the wafer frequency remains unchanged.

On the other hand, if it is determined in step SP4 that there is no tendency for a continuous 7-point increase and that Ucl is not exceeded (OK), the process proceeds to step SP6, and the determination unit 33 subsequently performs the Cp determination. When it is determined that the Cp value is 1.33 or less in step SP6 (NG), step S
Proceeding to P7, the value of m is maintained or subtracted according to the condition shown in FIG. 6, and the information is input to the transmission unit 34 as the data Dm. Specifically, when the Cp value is less than 1, the lot frequency is corrected to increase, and the Cp value is 1 or more and 1.3 or more.
When the number is 3 or less, the lot frequency remains unchanged. In any case, the wafer frequency remains unchanged.

On the other hand, if it is determined in step SP6 that the Cp value is larger than 1.33 (OK), the process proceeds to step SP8, and the value of m is added according to the condition shown in FIG. However, the determination result of step SP6 is "O.
When the situation of "K" occurs continuously a predetermined number of times or more, the process may proceed to step SP8.

Next, in step SP9, the determination unit 3
3 determines whether or not the value of m after addition in step SP8 exceeds a predetermined upper limit value (for example, 20). The predetermined upper limit value is taught in advance to the determination unit 33 at the time of initial setting according to the combination of the product type and the inspection process. The result of the determination in step SP9 is "YES".
If, that is, if the upper limit is exceeded, step SP
Proceeding to 10, the upper limit value is adopted as the value of m. Then, the information is input to the transmission unit 34 as the data Dm.

On the other hand, when the result of the determination in step SP9 is "NO", the value of m after addition in step SP8 is adopted as it is, and the information is input to the transmission section 34 as data Dm. Thereby, the lot frequency is corrected in the subsequent inspection.

With reference to FIG. 2, the data Dm and Dn are input from the transmission unit 34 of the data processing device 3 to the management unit 21 of the production management device 2. The management unit 21 reads the wafer frequency conditions J to K corresponding to the input data Dn from the wafer frequency setting table 24, and inputs the wafer frequency conditions J to K to the transmission unit 22 as data T regarding the wafer frequency. In addition, the management unit 2
1, the lot frequency is maintained or increased or decreased by maintaining or rewriting the item "whether or not to execute" in the process control table based on the input data Dm, and the transmitting unit 2 stores the data S as data S.
Enter 2. Then, the data S and T are input from the transmission unit 22 to the inspection device 1.

As described above, according to the semiconductor inspection system of the first embodiment, the determination unit 50 automatically changes the subsequent lot frequency and wafer frequency based on the past inspection results. Therefore, it is possible to obtain the inspection system and the inspection method in which the inspection result and the inspection frequency are appropriately associated with each other.

Embodiment 2. FIG. 8 is a top view showing a situation in which a semiconductor wafer has a defect. FIG. 8 (A)
Are defects P1 to P3 detected by the inspection process A.
8B shows defects P1 and P3 to P5 detected by the inspection process B. In the defect inspection, the inspection result in the subsequent inspection process B may be affected by the defect generated in the manufacturing process A earlier than the manufacturing process B corresponding to the inspection process B.
In the example shown in FIG. 8, the defect P generated in the manufacturing process A
1, P3 is not only inspection process A but inspection process B
But it has been detected. Therefore, by excluding the defects P1 and P3 from the determination target in the inspection process B, the defect in the manufacturing process B can be evaluated more accurately.

FIG. 9 is a block diagram specifically showing the configuration of the data processing device 3 according to the second embodiment of the present invention.
In the data processing device 3 according to the second embodiment, the storage unit 31 does not store the number R of defects as shown in FIG.
Is stored as an inspection result 35 for each inspection process. In the example shown in FIG. 8, the position coordinates (x1, y1) (x2, y2) (x3, y3) of the three defects P1 to P3 are stored as the inspection result 35 related to the inspection process A. As the inspection result 35 regarding B, the position coordinates (x1, x1) of the four defects P1, P3 to P5 are
y1) (x3, y3) (x4, y4) (x5, y5) are stored.

Further, the data processing device 3 according to the second embodiment includes a data processing unit 38 having an input connected to the output of the storage unit 31, and the input of the data calculation unit 32 is the data processing unit. 38 output.

In the processing related to the inspection process B in the above example, the data processing unit 38 causes the position coordinate (x1, y1) (x2, y2) (x3, which is the inspection result of the inspection process A to be obtained.
y3) and the position coordinates (x1, y1) (x3, y3) (x4, y4) (x5, which are the inspection results of the inspection process B.
y5) is read from the storage unit 31 as data R.
Then, among the position coordinates related to the inspection process B, the number of remaining defects (two in the above example) obtained by subtracting the position coordinates overlapping the position coordinates related to the inspection process A is
The data R1 is input to the data calculator 32. The data calculation unit 32 uses this data R1 to perform the same processing as that in the first embodiment.

As described above, according to the semiconductor inspection system of the second embodiment, the data processing apparatus 3 detects the position coordinates of the inspection process A among the position coordinates of the inspection process B in the process of the inspection process B. The number of remaining defects obtained by subtracting the overlapping ones is input to the data calculation unit 32 as the data R1. Therefore, the defects P1 and P3 can be excluded from the determination target in the inspection process B, and the defect in the manufacturing process B can be evaluated more accurately.

[0049]

According to the first aspect of the present invention, the determining section automatically changes the subsequent inspection frequency based on the past inspection results. Therefore, it is possible to obtain the inspection system in which the inspection result and the inspection frequency are appropriately associated with each other.

Further, according to the second aspect of the present invention, in the inspection system for inspecting a semiconductor wafer, the determination section automatically determines the lot frequency thereafter based on the past inspection result. Can be changed.

According to the third aspect of the present invention, the lot frequency can be appropriately determined by the table processing using the determination condition table.

According to the fourth aspect of the present invention, the determining unit can automatically change the subsequent wafer frequency based on the past inspection result.

According to the fifth aspect of the present invention, the lot frequency and the wafer frequency can be appropriately determined by the table processing using the determination condition table.

According to the sixth aspect of the present invention, in the inspection system for inspecting a semiconductor wafer, the determining section automatically determines the subsequent wafer frequency based on the past inspection result. Can be changed.

According to the seventh aspect of the present invention, the wafer frequency can be appropriately determined by the table processing using the determination condition table.

According to the eighth aspect of the present invention, in the process relating to the second defect inspection apparatus, a defect which has occurred in a manufacturing process prior to the corresponding manufacturing process is to be judged. Can be excluded from
It is possible to more accurately evaluate defects in each manufacturing process.

According to the ninth aspect of the present invention, the subsequent inspection frequency is automatically changed based on the past inspection results. Therefore, it is possible to obtain the inspection method in which the inspection result and the inspection frequency are appropriately associated with each other.

According to the tenth aspect of the present invention, in the inspection method for inspecting a semiconductor wafer, the subsequent lot frequency can be automatically changed based on the past inspection result. it can.

According to the eleventh aspect of the present invention, the subsequent wafer frequency can be automatically changed based on the past inspection result.

According to the twelfth aspect of the present invention, in the inspection method for inspecting a semiconductor wafer, the subsequent wafer frequency can be automatically changed based on the past inspection result. it can.

According to the thirteenth aspect of the present invention, in the processing relating to the second defect inspection apparatus,
Defects that have occurred in a manufacturing process prior to the corresponding manufacturing process can be excluded from the determination targets, and defects in each manufacturing process can be evaluated more accurately.

[Brief description of drawings]

FIG. 1 is a block diagram conceptually showing a semiconductor inspection system according to a first embodiment of the present invention.

FIG. 2 is a block diagram showing a specific configuration of a production management device.

FIG. 3 is a block diagram showing a specific configuration of a data processing device.

FIG. 4 is a diagram showing an example of a wafer frequency setting table.

FIG. 5 is a diagram showing an example of inspection results.

FIG. 6 is a diagram showing an example of a determination condition table.

FIG. 7 is a flowchart for explaining the operation of the data processing device.

FIG. 8 is a top view showing a situation in which a semiconductor wafer has a defect.

FIG. 9 is a block diagram specifically showing a configuration of a data processing device according to a second embodiment of the present invention.

FIG. 10 is a block diagram conceptually showing a conventional semiconductor inspection system.

FIG. 11 is a diagram showing a process control table for lot L1.

FIG. 12 is a diagram showing a process control table for lot L2.

[Explanation of symbols]

1, 1A to 1C inspection device, 2 production management device, 3 data processing device, 21 management unit, 23, 31 storage unit, 24
Wafer frequency setting table, 32 data calculator, 33
Determination unit, 35 inspection results, 37 determination condition table,
38 data processing unit, 50 decision unit.

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Claims (13)

[Claims] 1. An inspection apparatus that executes an inspection of an inspection object, and result data regarding the result of the inspection is input from the inspection apparatus, and the inspection is executed subsequently among a plurality of the inspection objects based on the result data. An inspection system comprising: a determination unit that determines the ratio of the inspection target to be processed by data processing. 2. The inspection target is a semiconductor wafer, and the determination unit determines a ratio of an inspection lot including the semiconductor wafer to be inspected among a plurality of lots. Inspection system. 3. The determination unit, based on the result data, a data calculation unit that calculates a lot value that is a value representing the result data for the inspection lot, the lot value and a predetermined determination condition table. On the basis of,
The inspection system according to claim 2, further comprising a data processing device including a determination unit that determines the ratio of the inspection lot of the plurality of lots. 4. The inspection system according to claim 2, wherein the determination unit further determines a ratio of inspection wafers to be subjected to the inspection among a plurality of semiconductor wafers included in each lot. 5. The determination unit, based on the result data, a data calculation unit that calculates a lot value that is a value representing the result data for the inspection lot, the lot value and a predetermined determination condition table. On the basis of,
The inspection according to claim 4, further comprising a data processing device including a determination unit that determines the ratio of the inspection lot of the plurality of lots and the ratio of the inspection wafer of the plurality of semiconductor wafers. system. 6. The inspection target is a semiconductor wafer, and the determination unit determines a ratio of inspection wafers to be subjected to the inspection among a plurality of semiconductor wafers included in a lot. Inspection system. 7. The data calculation unit, wherein the determination unit calculates a lot value that is a value representing the result data for the lot including the semiconductor wafer on which the inspection is performed, based on the result data, Based on the lot value and a predetermined determination condition table,
The inspection system according to claim 6, further comprising a data processing device including a determination unit that determines a ratio of the inspection wafer among the plurality of semiconductor wafers. 8. The inspection apparatus includes first and second defect inspection apparatuses for inspecting defects on the semiconductor wafer in this order, and the result data is found by a defect inspection by the first defect inspection apparatus. The first coordinate data regarding the position of the defect in the wafer surface of the semiconductor wafer, and the position of the defect in the wafer surface of the semiconductor wafer, which are found by the defect inspection by the second defect inspection apparatus. And a second coordinate data, wherein the determination unit is obtained by subtracting, from the second coordinate inspection data, data overlapping with the first coordinate data in the process related to the second defect inspection device. The inspection system according to claim 3, further comprising a data processing unit that inputs the result data to the data calculation unit. 9. (a) performing an inspection of an inspection target by an inspection device; (b) inputting result data relating to the result of the inspection from the inspection device, and based on the result data, a plurality of the inspections An inspection method, comprising the step of deciding a ratio of the inspection target to be subsequently subjected to the inspection by data processing. 10. The inspection target is a semiconductor wafer, and in the step (b), a ratio of an inspection lot including the semiconductor wafer to be subjected to the inspection is determined in a plurality of lots. Item 9. The inspection method according to Item 9. 11. In the step (b), further,
Of the plurality of semiconductor wafers included in each of the lots,
A percentage of the inspection wafers to perform the inspection is determined,
The inspection method according to claim 10. 12. The inspection target is a semiconductor wafer, and in the step (b), a ratio of inspection wafers to be inspected among a plurality of semiconductor wafers included in a lot is determined. Item 9. The inspection method according to Item 9. 13. The inspection target is a semiconductor wafer, the inspection apparatus includes first and second defect inspection apparatuses that inspect defects on the semiconductor wafer in this order, and the result data includes the first defect. Of the semiconductor wafer, which is found by the defect inspection by the defect inspection apparatus, and is detected by the defect inspection by the second defect inspection apparatus, and the first coordinate data regarding the position of the defect in the wafer surface of the semiconductor wafer. The second coordinate data regarding the position of the defect in the wafer surface, and in the process of the second inspection apparatus in the step (b), the first coordinate data among the second coordinate data. 10. The inspection method according to claim 9, wherein the result data obtained by subtracting those overlapping with is used.