JP2003178987A - Method of manufacturing nitride system compound semiconductor, nitride system compound semiconductor wafer and nitride system compound semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method, ensuring higher mass-productivity, of manufacturing a p-type nitride system compound semiconductor having high hole concentration and assuring higher flatness of the surface. <P>SOLUTION: There is provided the method of manufacturing nitride compound semiconductor to form, with chemical vapor deposition, a nitride system compound semiconductor lamination structure having a p-type layer including at least acceptor atom. In this manufacturing method, the formed structure is cooled after the chemical vapor deposition under the atmosphere of nitrogen raw material (for example, trymethylhydrazine) in which hydrogen is never released when nitrogen is released due to the dissociation, or under the mixed gas atmosphere of the nitrogen raw material atmosphere in which hydrogen is never leased when nitrogen is released due to the dissociation and the inert gas. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a nitride compound semiconductor, a nitride compound semiconductor wafer, and a nitride compound semiconductor device, and more particularly to a high hole concentration and a flat surface. The present invention relates to a method for manufacturing a highly p-type nitride compound semiconductor with high mass productivity, and a semiconductor wafer and a semiconductor device obtained by the method.

[0002]

2. Description of the Related Art Nitride-based compound semiconductors such as GaN, AlGaN, and InGaN have been attracting attention as light-emitting element materials capable of emitting red to ultraviolet light.

When a device is formed by using a nitride compound semiconductor, it is very important to control the conduction type and the hole or electron density.

For example, when manufacturing a light emitting diode (LED), a semiconductor laser, etc., AlGaN, InG
It is necessary to stack aN, GaN, and the like in multiple layers to form a structure in which the light emitting layer (active layer) is sandwiched by the n-type cladding layer and the p-type cladding layer.

Also in a hetero bipolar transistor (HBT), AlGaN, InGaN, Ga
It is necessary to stack N or the like in multiple layers to form an npn or pnp junction.

Conventionally, metal organic chemical vapor deposition (MOCV)
For example, a p-type GaN layer is formed by a vapor phase growth method such as D).
To grow, hydrogen (H₂) Or H₂And nitrogen (N₂)
Trimethyl as a Ga raw material in a mixed gas of
Gallium (TMG, Ga (CH ₃)₃), As N raw material
Ammonia (NH₃) And as a p-type dopant
Clopentadienyl magnesium (CP₂Mg) etc.,
Heated sapphire substrate, SiC substrate, GaAs substrate
, Mg-doped G by thermal decomposition reaction
Grow an aN layer.

This Mg-doped GaN layer is a high-resistance layer as it is, and exhibits p-type electrical conductivity for the first time when it is heat-treated in a vacuum or an inert gas after growth.

In this case, by this heat treatment, hydrogen bonded to Mg in GaN is dissociated by annealing, and G
It is said that Mg is discharged from the surface of the aN crystal, Mg acts as an acceptor, and becomes p-type.

[0009]

However, the carrier concentration of the p-type GaN layer obtained by the above-mentioned annealing after growth is currently about 4 × 10 ¹⁷ cm ⁻³ , and its resistivity is high. Therefore, for example, in a light emitting device using a nitride-based III-V group compound semiconductor, problems such as voltage loss in the p-type contact layer and deterioration due to heat generation are unavoidable. Further, as described above, in the conventional method for manufacturing a nitride-based compound semiconductor, since it is essential to anneal the semiconductor wafer after growth, there is a problem that the manufacturing process is complicated and mass productivity is deteriorated.

Although a method of cooling after growth in an inert gas atmosphere has been attempted, in this case, the surface of the nitride-based compound semiconductor is heated to a high temperature while the active N partial pressure is low. Since it is exposed, there is a problem that the flatness of the surface deteriorates.

Therefore, an object of the present invention relates to a method for producing a p-type nitride compound semiconductor, a semiconductor wafer, and a semiconductor device, and particularly to a nitride compound having a high hole concentration and a high surface flatness. It is an object of the present invention to provide a method of manufacturing a semiconductor with high mass productivity and a semiconductor wafer and a semiconductor device obtained by the method.

[0012]

In order to achieve the above object, the present invention is configured as follows.

In the method for manufacturing a nitride-based compound semiconductor according to the present invention, a nitride-based compound semiconductor body laminated structure having a p-layer containing at least acceptor atoms is formed by vapor phase epitaxy. In the method of manufacturing a compound semiconductor, cooling after the growth is performed in a nitrogen source atmosphere in which hydrogen is not released when nitrogen is released by dissociation.

According to a second aspect of the present invention, there is provided a method of manufacturing a nitride-based compound semiconductor, wherein a nitride-based compound semiconductor having a p-layer containing at least an acceptor atom is formed by vapor phase epitaxy. In the manufacturing method described above, cooling after the growth is performed in a mixed gas of an inert gas and a nitrogen source atmosphere that does not release hydrogen when releasing nitrogen by dissociation.

According to a third aspect of the present invention, there is provided a method for producing a nitride compound semiconductor, wherein a nitride compound semiconductor layered structure having a p-layer containing at least acceptor atoms on the outermost surface is formed by vapor phase epitaxy. In the method for manufacturing a compound semiconductor, the growth of at least a part of the outermost surface of the p layer and the cooling after the growth are performed in a nitrogen source atmosphere in which hydrogen is not released when nitrogen is released by dissociation.

According to a fourth aspect of the present invention, there is provided a method for producing a nitride compound semiconductor, wherein a nitride compound semiconductor layered structure having at least a p-layer containing acceptor atoms on its outermost surface is formed by vapor phase epitaxy. In the method for producing a compound semiconductor, the growth of at least a part of the outermost surface of the p layer and the cooling after the growth are performed in a mixed gas of a nitrogen source atmosphere and an inert gas that does not release hydrogen when nitrogen is released by dissociation. It is characterized by performing.

A fifth aspect of the present invention is characterized in that, in the production method according to any one of the first to fourth aspects, the nitrogen raw material is an amine compound, a hydrazine compound or an azide compound.

According to a sixth aspect of the present invention, in the production method according to the first to fourth aspects, the nitrogen raw material is any one of trimethylamine, dimethylamine, triethylamine, diethylamine, phenylmethylamine and trimethylhydrazine. And

[0019] The invention of claim 7 is the method according to any one of claims 1 to 6, the nitride-based compound semiconductor, the general _{formula, B w Al x In y Ga} z N a P b As c (W,
x, y, z ≧ 0, w + x + y + z = 1, a> 0, b, c ≧
0, a + b + c = 1).

According to an eighth aspect of the present invention, in the manufacturing method according to any one of the first to seventh aspects, hydrogen is not released from the nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, when the nitrogen is released by the dissociation. It is characterized in that switching to the nitrogen raw material or a mixed gas of this and an inert gas is performed immediately after the growth is completed.

According to a ninth aspect of the present invention, in the production method according to any of the first to seventh aspects, hydrogen is not released from the nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, when the nitrogen is released by the dissociation. The method is characterized in that switching to the nitrogen raw material or a mixed gas of this and an inert gas is performed at a substrate temperature of 900 ° C. or higher during cooling after the growth.

According to a tenth aspect of the present invention, in the manufacturing method according to any one of the first to seventh aspects, hydrogen is not released from the nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, when the nitrogen is released by the dissociation. The method is characterized in that switching to the nitrogen raw material or a mixed gas of this and an inert gas is carried out at a substrate temperature of 700 ° C. or higher during cooling after the growth.

According to the eleventh aspect of the present invention, in the manufacturing method according to any one of the first to seventh aspects, hydrogen is not released from the nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, when the nitrogen is released by the dissociation. It is characterized in that the nitrogen source or the mixed gas of the nitrogen source and the inert gas is switched at a substrate temperature of 400 ° C. or higher during cooling after the growth.

According to a twelfth aspect of the present invention, in the manufacturing method according to any one of the first to seventh aspects, hydrogen is not released from the nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, when the nitrogen is released by the dissociation. It is characterized in that the nitrogen source or the mixed gas of the nitrogen source and the inert gas is switched to a substrate temperature of room temperature or higher during cooling after the growth.

The thirteenth aspect of the invention is the production method according to any one of the first to twelfth aspects, wherein the vapor phase growth is performed by adding p
It is characterized in that a group II element is used as a type impurity.

The invention according to claim 14 is characterized in that, in the manufacturing method according to claim 13, any one of Mg, Zn and Cd is used as the group II element.

The invention of claim 15 relates to claim 2 or 4 to 1.
4. The production method according to any one of 4 above, wherein the inert gas is any one of nitrogen, helium, and argon.

The invention as claimed in claim 16 is as follows.
15. In the manufacturing method according to any one of 15 above, 10 are added to the nitrogen raw material that does not release hydrogen when releasing nitrogen by the dissociation.
It is characterized by containing 0 ppm or less of hydrogen.

The invention of claim 17 is based on claims 2, 4 to 15
In the manufacturing method described in any one of 1 to 3, 100 ppm or less of hydrogen is contained in the mixed gas of the nitrogen raw material and the inert gas that does not release hydrogen when nitrogen is released by the dissociation.

The invention of claim 18 is characterized in that, in the manufacturing method according to any one of claims 1 to 17, the nitride compound semiconductor is vapor-grown by a metal organic chemical vapor deposition method.

A semiconductor wafer according to the invention of claim 19 is
It manufactured by the method in any one of Claims 1-18.

A semiconductor device according to a twentieth aspect of the invention is characterized by being manufactured using the semiconductor wafer manufactured by the method according to any one of the first to eighteenth aspects.

<Operation> In order to solve the above-mentioned technical problem, the inventors of the present invention ensure that active hydrogen does not exist in the atmosphere in the cooling process after the growth of the nitride-based compound semiconductor. Is important, and from this point of view, it is extremely important to select the nitrogen raw material and the carrier gas, and the following conclusions have been reached.

(1) In order to suppress the incorporation of hydrogen into the crystal, at least in the cooling process after completion of growth, a conventional nitrogen source that releases hydrogen when releasing nitrogen by dissociation, such as ammonia, and a carrier gas are used. It is preferable to carry out in the absence of hydrogen.

(2) Further, in order to avoid the above-mentioned deterioration of the surface flatness upon cooling in an inert gas, only a nitrogen source which does not release hydrogen when releasing nitrogen by dissociation is used instead of the conventional nitrogen source. Alternatively, it is preferable to carry out in a mixed gas atmosphere of this nitrogen raw material and an inert gas as a carrier gas, for example, nitrogen, helium, argon or the like.

(3) Trimethylhydrazine, diethylamine, phenylmethylamine and the like can be used as the nitrogen source which does not release hydrogen when nitrogen is released by the above dissociation.
Trimethylhydrazine was used in Examples described later.

(4) The above-mentioned conventional nitrogen source that releases hydrogen when nitrogen is released by dissociation is switched to a nitrogen source that does not release hydrogen when nitrogen is released by dissociation after the growth of the nitride-based compound semiconductor is completed. Alternatively, it is preferably performed during the growth of the outermost layer after the growth is completed.

(5) The optimum timing for switching the above nitrogen source is determined by the structure of the growth layer and the application of the semiconductor wafer. That is, for example, when switching during growth, switching of the nitrogen source may change the nitride-based compound semiconductor crystal characteristics other than the conduction characteristics. If this adversely affects the final device characteristics, the growth end It is preferable to switch the nitrogen raw material later, and it is more preferable to switch the nitrogen raw material during the growth if it gives a good effect.

Further, due to the restriction of the growth apparatus itself, the effective active nitrogen density resulting from the nitrogen raw material after switching is
Since the effective active nitrogen density before switching will be lower than that, if switching the nitrogen source during or immediately after the growth causes the deterioration of the surface flatness, the temperature will drop to a certain degree after the growth and It may be preferable to switch the raw materials.

(6) However, as will be described later in Examples, a certain degree of acceptor activation rate can be obtained even when the nitrogen source is switched at a substrate temperature of 400 ° C., but the substrate temperature is 700 ° C. By performing the above, a high activation rate of the acceptor can be obtained, more preferably it should be performed at 900 ° C. or higher, and further preferably, it should be performed immediately after the growth unless there is a restriction on the device.

(7) Even if a small amount (<100 ppm) of hydrogen is mixed in the nitrogen raw material that does not release hydrogen when releasing nitrogen by the above-mentioned dissociation, or in the mixed gas of the nitrogen raw material and the inert gas, A somewhat high acceptor activation rate can be obtained.

[0042] In the present invention, typically, the nitride-based compound semiconductor represented by the general _{formula, B w Al x In y Ga} z N a P b As c
(W, x, y, z ≧ 0, w + x + y + z = 1, a> 0, b,
c ≧ 0, a + b + c = 1). BN, GaN, GaNAs, GaNP, Al to name a few.
GaN, InGaN, InAlGaN and the like.

In the present invention, the p-type impurity of the p-type nitride compound semiconductor is a group II element such as Mg or Z.
n, Cd, etc. are used.

In the present invention, typically, a nitride compound semiconductor is vapor-grown by metal organic chemical vapor deposition (MOVPE) or hydride vapor phase epitaxy (HVPE).

According to the present invention configured as described above, a high concentration of holes can be obtained by preventing a large amount of active hydrogen from existing in the atmosphere during the cooling process after the growth of the nitride-based compound semiconductor. Provided is a method for manufacturing a nitride-based compound semiconductor having high surface flatness with high mass productivity, and a semiconductor wafer and a semiconductor device obtained by the method.

[0046]

BEST MODE FOR CARRYING OUT THE INVENTION Next, an embodiment of a method for manufacturing a p-type nitride compound semiconductor according to the present invention and a semiconductor wafer and a semiconductor device manufactured by the method will be described. A MOVPE apparatus was used as the growth apparatus in the following examples. The sample structure is shown in FIG.

<Examples 1 and 2> In the following Examples, prior to growing the p-type GaN layer 3 on the c-plane sapphire substrate 1, conventional ammonia was used as a nitrogen source on the c-plane sapphire substrate. Undoped GaN buffer layer 2 using TMG as a gallium raw material by MOVPE method
The grown substrate was used as a "substrate".

The "substrate" was prepared as follows.
First, a 0.25 degree off c-plane sapphire substrate 1 is placed in a reaction furnace of an atmospheric pressure MOVPE apparatus, heat-treated at 1200 ° C., then the substrate temperature is lowered to 500 ° C., and an InGaN buffer layer is grown to a thickness of 20 nm. . Next, the substrate temperature is set to 11
After the temperature is increased to 00 ° C., the undoped GaN layer 2 is 2 μm thick.
grow. Then, the substrate temperature was lowered to room temperature in an ammonia atmosphere, and the substrate was taken out from the growth apparatus.

Undoped Ga on the above sapphire substrate
By using N as the substrate and evaluating the characteristics of only the undoped layer before growing the p-GaN layer, it was confirmed in advance that the p-GaN layer was grown on the substrate having almost the same characteristics. . From this confirmation, in the present embodiment, the influence of the characteristics of the low temperature growth buffer layer, which is sensitive to subtle changes in growth conditions, can be excluded.

It is also apparent that the present invention can be applied to the growth of a nitride compound semiconductor on a single crystal nitride compound semiconductor substrate.

The growth on the "substrate" was performed as follows. First, the "substrate" is introduced into the reaction furnace of an atmospheric or reduced pressure MOVPE apparatus, and the
Heat to 100 ° C. The growth of the p-GaN layer 3 is started when the substrate temperature reaches about 1000 ° C. in the temperature rising process. The carrier gas at that time is hydrogen (flow rate is 10
1 / min), the ammonia flow rate is 0.4 mol / min,
TMG flow rate is 180 μmol / min, CP ₂ Mg flow rate is 2
It was set to 50 nmol / min. In this case, the growth rate of p-GaN was 3600 nm / hour, and the p-GaN layer 3 having a thickness of 1800 nm was grown with the growth time of p-GaN being 30 minutes.

Part of the p-GaN sample grown in this example (Sample A, Example 1) was further dissociated on the p-GaN layer 3 grown using the above-mentioned ammonia, instead of ammonia. Trimethylhydrazine (4mmol /
Min) and a nitrogen carrier (flow rate is 10 l / min) instead of a hydrogen carrier, and the p-GaN layer 4 is further varied in thickness between 0 and 600 nm (from near zero to 600 nm). At room temperature and then cooled to room temperature under a trimethylhydrazine and nitrogen atmosphere.

Further, the p-Ga grown in this example is
Another part of the N samples (Sample B, Example 2) was p-G.
When the film thickness of the aN layer 4 is 0, that is, after the growth of the p-GaN layer 3 grown using the above ammonia is completed, p-Ga
Without growing the N layer 4, cooling of the sample is started under an atmosphere of ammonia and hydrogen, and the growth temperature (1100 ° C.) to 200
The atmosphere was switched to a hydrogen-free mixed gas of trimethylhydrazine and nitrogen at various temperatures between ° C.

Any of the above p-GaN samples (Sample A,
B and Examples 1 and 2) also have a flat surface, and the surface roughness as seen in the case of cooling in a conventional atmosphere containing only an inert gas did not occur.

The p-GaN samples (Samples A and B, Examples 1 and 2) thus grown were divided into 5 mm squares without post-growth activation annealing, and Ni was divided into four corners.
/ Au dots are formed to form holes (Hal) by the van der Pauw method.
l) The measurement was performed at room temperature to determine the carrier concentration (hole concentration) of the p-GaN layer 5.

P-GaN using trimethylhydrazine
The hole concentration of the sample on which the layer 4 is grown (Sample A, Example 1) is shown in FIG. 2 as a function of the thickness of the p-GaN layer 4. When the film thickness of the p-GaN layer 4 is 0, that is, p-G
At the time when the growth of the aN layer 3 was completed, the nitrogen source and the carrier gas were switched, and the p-GaN layer 4 was not grown as it was and cooled (Sample B, Example 2) (point on the right edge of FIG. 2).
The hole concentration is 3 × 10 ¹⁸ cm ⁻³ , and even if the heat treatment for activating the impurities is not performed after the growth, the sample is conventionally (both growth and cooling are performed in ammonia, and activation annealing is performed after the growth. The carrier concentration was higher than the hole concentration of about 4 × 10 ¹⁷ cm ^-3 . Moreover, as shown in FIG. 2, the hole concentration gradually decreased as the film thickness of the p-GaN layer 4 grown using trimethylhydrazine increased. However, p-G grown with trimethylhydrazine
Even the sample in which the film thickness of the aN layer 4 was 600 nm showed a hole concentration of about 1 × 10 ¹⁷ cm ⁻³ without activation annealing. This decrease in hole concentration is considered to be caused by the crystallinity of the p-GaN layer grown using trimethylhydrazine being inferior to that of the p-GaN layer grown using ammonia.

Then, without growing the p-GaN layer 4, p-
FIG. 3 shows the hole concentration of the sample (Sample B, Example 2) in which the nitrogen source was switched in the cooling process after the growth of the GaN layer 3 as a function of the substrate temperature when the nitrogen source was switched. When the temperature at the time of switching was between 1100 and 900 ° C, a higher carrier concentration than before was obtained.

However, the hole concentration gradually decreases as the switching temperature decreases, and the hole concentration sharply decreases at about 700 ° C. However, even when the switching temperature was around 200 ° C, the conductivity of Wakasen remained.

As described above, according to the embodiments 1 and 2, the p-GaN layer having conductivity can be obtained without performing annealing for activating the impurities after the growth, and further, the trimethyl layer is formed. P-GaN grown using hydrazine
When the layer 4 is thin, and when the switching temperature of the nitrogen source and the carrier gas during cooling is 900 ° C. or higher, it is possible to obtain a p-GaN layer having a higher carrier concentration than the conventional one. This p-GaN layer is suitable as a contact layer for the p-side electrode in a GaN-based semiconductor laser, for example.

Example 3 As Example 3, p-GaN is used.
Immediately after the growth of the layer 3, the nitrogen source and the carrier gas are switched to p-
When cooling is started without growing the GaN layer 4 (Sample B,
In Example 2), 0 to 200 ppm of hydrogen was added in a mixed gas of trimethylhydrazine and nitrogen, which is a cooling atmosphere.
It cooled in the atmosphere added in the range of.

FIG. 4 shows the hole concentration of the above p-GaN sample as a function of the hydrogen concentration in the atmosphere gas. Although the hole concentration gradually decreases as the hydrogen concentration increases, it is possible to obtain a certain hole concentration when the hydrogen concentration is 100 ppm or less.

<Embodiment 4> FIG. 5 shows the structure of an LED using a semiconductor wafer according to the present invention. On the "substrate (including the sapphire substrate 1 and the undoped GaN layer 2)" 20 described in Example 1, the n-GaN layer 3 doped with silicon is provided.
0 was grown at 1100 ° C., and silicon-doped In was grown on it.
The GaN layer 40 is grown at a low temperature of 800 ° C., and then the growth temperature is raised again to 1100 ° C. to grow the p-GaN layer 5. The p-GaN layer 5 was grown using ammonia as a nitrogen source and hydrogen carriers. Immediately after the growth of the p-GaN layer, the nitrogen source and the carrier gas were switched to trimethylhydrazine and nitrogen, respectively, to cool the sample.

RIE (Rea
Part of the n-GaN layer 30 is exposed by partially removing it by active ion etching, and the Ti / Al electrode 6 is formed in the exposed part, while p-GaN is formed.
The Ni / Au electrode 7 was formed on the surface of the layer 5.

An LE having a similar structure using the LED having the structure of Example 4 described above and a conventional semiconductor wafer grown using ammonia as a nitrogen source during growth and cooling
The emission output was measured for D and 20m.
The light output when energized A is the LED having the configuration of the fourth embodiment of the present invention.
Was 5 mW, whereas it was 1 mW for an LED using a conventional semiconductor wafer. 5 between both
A double difference is recognized, and the effect of the present invention is remarkably exhibited.

The embodiments of the present invention have been specifically described above, but the present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the technical idea of the present invention.

For example, the numerical values given in the above embodiments are merely examples, and different numerical values may be used if necessary.

[0067]

As described above, according to the method for producing a nitride-based compound semiconductor of the present invention, since a nitrogen source that does not release hydrogen during the nitrogen-releasing process is used, It is possible to prevent carriers from being deactivated by taking active hydrogen into the p-type nitride compound semiconductor having a high carrier concentration without heat treatment for activating impurities after growth. Can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a layer structure for explaining a method for manufacturing a p-type nitride compound semiconductor according to the present invention.

FIG. 2 is a diagram showing the relationship between the hole concentration and the film thickness of the p-GaN layer 4 of the sample in which the p-GaN layer 4 using trimethylhydrazine was grown in Examples 1 and 2 of the present invention.

FIG. 3 shows the hole concentration of the sample in which the nitrogen source was switched in the cooling process after the growth of the p-GaN layer 3 without growing the p-GaN layer 4 in Example 2 of the present invention. It is a figure which shows the relationship between the substrate temperature at the time of switching a nitrogen source.

FIG. 4 is a diagram showing a relationship between a hole concentration of a p-GaN sample and a hydrogen concentration in an atmosphere gas at the time of cooling in Example 3 of the present invention.

FIG. 5 is a diagram showing a structure of a semiconductor device according to a fourth embodiment of the invention.

[Explanation of symbols]

1 c-plane sapphire substrate 2 undoped GaN layer 3 p-GaN layer (p-type GaN layer using ammonia) 4 p-GaN layer (p-type GaN layer using trimethylhydrazine) 5 p-GaN layer 6, 7 electrode 20 Substrate 30 n-GaN layer 40 n-InGaN layer

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Claims (20)

[Claims] 1. A method for manufacturing a nitride-based compound semiconductor, which comprises forming a laminated structure of a nitride-based compound semiconductor having a p-layer containing at least acceptor atoms by vapor phase epitaxy,
A method for manufacturing a nitride-based compound semiconductor, characterized in that cooling after the growth is performed in a nitrogen source atmosphere that does not release hydrogen when nitrogen is released by dissociation. 2. A method for manufacturing a nitride-based compound semiconductor, which comprises forming a laminated structure of a nitride-based compound semiconductor having a p-layer containing at least acceptor atoms by vapor phase epitaxy,
A method for producing a nitride-based compound semiconductor, characterized in that cooling after the completion of growth is performed in a mixed gas of an inert gas and a nitrogen source atmosphere that does not release hydrogen when releasing nitrogen by dissociation. 3. A method for manufacturing a nitride-based compound semiconductor, comprising: forming a laminated structure of a nitride-based compound semiconductor having a p-layer containing at least acceptor atoms on the outermost surface by vapor phase epitaxy. A method for producing a nitride compound semiconductor, wherein at least a part of growth and cooling after the growth are performed in a nitrogen source atmosphere in which hydrogen is not released when nitrogen is released by dissociation. 4. A method for manufacturing a nitride-based compound semiconductor, comprising: forming a laminated structure of a nitride-based compound semiconductor having a p-layer containing at least acceptor atoms on the outermost surface by vapor phase epitaxy. A method for producing a nitride-based compound semiconductor, wherein at least a part of growth and cooling after completion of growth are performed in a mixed gas of a nitrogen source atmosphere that does not release hydrogen when releasing nitrogen by dissociation and an inert gas. 5. The method for producing a nitride compound semiconductor according to claim 1, wherein the nitrogen raw material is an amine compound, a hydrazine compound or an azide compound. 6. The method for producing a nitride compound semiconductor according to claim 1, wherein the nitrogen raw material is any one of trimethylamine, dimethylamine, triethylamine, diethylamine, phenylmethylamine and trimethylhydrazine. . 7. The nitride-based compound semiconductor is represented by the general formula: B
_{w Al x In y Ga z N} a P b As c (w, x, y, z ≧ 0,
w + x + y + z = 1, a> 0, b, c ≧ 0, a + b + c = 1)
The method for producing a nitride-based compound semiconductor according to any one of claims 1 to 6, wherein: 8. A method of switching from a nitrogen source such as ammonia, which accompanies hydrogen release in the dissociation process, to a nitrogen source or a mixed gas of this and an inert gas, which does not release hydrogen when nitrogen is released by the dissociation, immediately after the growth is completed. The method for manufacturing a nitride-based compound semiconductor according to claim 1, wherein the method is performed. 9. A method for switching from a nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, to a nitrogen raw material or a mixed gas of this and an inert gas, which does not release hydrogen at the time of nitrogen release by the dissociation, after completion of growth. When cooled, the substrate temperature is 90
It carries out at 0 degreeC or more, The manufacturing method of the nitride type compound semiconductor in any one of Claims 1-7 characterized by the above-mentioned. 10. A method for switching from a nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, to a nitrogen source or a mixed gas of this and an inert gas, which does not release hydrogen at the time of nitrogen release by the dissociation, after the growth is completed. When cooled, the substrate temperature is 7
The method for producing a nitride-based compound semiconductor according to claim 1, wherein the method is performed at a temperature of 00 ° C. or higher. 11. A method of switching from a nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, to a nitrogen raw material or a mixed gas of this and an inert gas, which does not release hydrogen at the time of nitrogen release by the dissociation, after completion of growth. When cooled, the substrate temperature is 4
The method for producing a nitride-based compound semiconductor according to claim 1, wherein the method is performed at a temperature of 00 ° C. or higher. 12. Switching from a nitrogen source such as ammonia, which is accompanied by hydrogen release in the dissociation process, to a nitrogen source or a mixed gas of this and an inert gas, which does not release hydrogen at the time of nitrogen release by the dissociation, after the growth is completed. The method for producing a nitride-based compound semiconductor according to any one of claims 1 to 7, wherein the cooling is performed at a substrate temperature of room temperature or higher. 13. The method for producing a nitride-based compound semiconductor according to claim 1, wherein a Group II element is used as a p-type impurity in the vapor phase growth. 14. The method for producing a nitride-based compound semiconductor according to claim 13, wherein any one of Mg, Zn and Cd is used as the group II element. 15. The method for producing a nitride compound semiconductor according to claim 2, wherein the inert gas is any one of nitrogen, helium, and argon. 16. The nitride compound according to claim 1, wherein the nitrogen raw material that does not release hydrogen when releasing nitrogen by dissociation contains 100 ppm or less of hydrogen. Semiconductor manufacturing method. 17. A mixed gas of a nitrogen source and an inert gas, which does not release hydrogen when releasing nitrogen due to the dissociation, is added with 100 p
The hydrogen gas of pm or less is contained, and the hydrogen generating method according to claim 2 or 4.
16. The method for manufacturing a nitride-based compound semiconductor according to any one of 15. 18. The method for producing a nitride compound semiconductor according to claim 1, wherein the nitride compound semiconductor is vapor-grown by a metal organic chemical vapor deposition method. 19. A nitride-based compound semiconductor wafer manufactured by the method according to any one of claims 1 to 18. 20. A nitride-based compound semiconductor device manufactured by using the semiconductor wafer manufactured by the method according to claim 1.