JP2003178986A5 - - Google Patents

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Publication number
JP2003178986A5
JP2003178986A5 JP2001379401A JP2001379401A JP2003178986A5 JP 2003178986 A5 JP2003178986 A5 JP 2003178986A5 JP 2001379401 A JP2001379401 A JP 2001379401A JP 2001379401 A JP2001379401 A JP 2001379401A JP 2003178986 A5 JP2003178986 A5 JP 2003178986A5
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JP
Japan
Prior art keywords
cleaning
gas
oxygen
cleaning gas
fluorine
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Pending
Application number
JP2001379401A
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Japanese (ja)
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JP2003178986A (en
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Priority to JP2001379401A priority Critical patent/JP2003178986A/en
Priority claimed from JP2001379401A external-priority patent/JP2003178986A/en
Priority to PCT/JP2002/013002 priority patent/WO2003054247A2/en
Priority to KR10-2003-7009691A priority patent/KR20040065154A/en
Priority to TW91136000A priority patent/TW571366B/en
Priority to CN 02804007 priority patent/CN1592798A/en
Priority to US10/250,924 priority patent/US20040231695A1/en
Priority to AU2002366920A priority patent/AU2002366920A1/en
Publication of JP2003178986A publication Critical patent/JP2003178986A/en
Publication of JP2003178986A5 publication Critical patent/JP2003178986A5/ja
Pending legal-status Critical Current

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Claims (17)

半導体または液晶製造装置内の堆積物を除去するためのクリーニングガスにおいて、フッ素ガスを含み、かつ酸素および／または酸素含有化合物の含有量が１ｖｏｌ％以下であることを特徴とするクリーニングガス。A cleaning gas for removing deposits in a semiconductor or liquid crystal manufacturing apparatus, comprising a fluorine gas and containing oxygen and / or an oxygen-containing compound of 1 vol% or less. 半導体または液晶製造装置内の堆積物を除去するためのクリーニングガスにおいて、酸素および／または酸素含有化合物の含有量が１ｖｏｌ％以下のフッ素ガスを含むことを特徴とするクリーニングガス。 A cleaning gas for removing deposits in a semiconductor or liquid crystal manufacturing apparatus, comprising a fluorine gas containing oxygen and / or an oxygen-containing compound of 1 vol% or less. 酸素および／または酸素含有化合物の含有量が０．５ｖｏｌ％以下のフッ素ガスを含む請求項２に記載のクリーニングガス。The cleaning gas according to claim 2 , comprising a fluorine gas having a content of oxygen and / or an oxygen-containing compound of 0.5 vol% or less. 酸素および／または酸素含有化合物の含有量が０．１ｖｏｌ％以下のフッ素ガスを含む請求項３に記載のクリーニングガス。The cleaning gas according to claim 3 , comprising oxygen and / or a fluorine gas having an oxygen-containing compound content of 0.1 vol% or less. フッ素ガスの純度が９９ｖｏｌ％以上である請求項２〜４のいずれかに記載のクリーニングガス。The cleaning gas according to any one of claims 2 to 4 , wherein the purity of the fluorine gas is 99 vol% or more. フッ素ガスの純度が９９．５ｖｏｌ％以上である請求項５に記載のクリーニングガス。The cleaning gas according to claim 5 , wherein the purity of the fluorine gas is 99.5 vol% or more. 酸素含有化合物が、ＮＯ、Ｎ2Ｏ、ＮＯ2、ＣＯ、ＣＯ2、Ｈ2Ｏ、ＯＦ2、Ｏ2Ｆ2およびＯ3Ｆ2からなる群から選ばれる少なくとも１種である請求項１〜６のいずれかに記載のクリーニングガス。Oxygen-containing compounds, NO, N 2 O, NO 2, CO, CO 2, H 2 O, OF 2, O 2 F 2 and O 3 claim 1 is at least one selected from the group consisting of F 2 The cleaning gas according to any one of 6 . 酸素含有化合物が、ＣＯ、ＣＯ2およびＨ2Ｏからなる群から選ばれる少なくとも１種である請求項１〜６のいずれかに記載のクリーニングガス。Oxygen-containing compounds, CO, at least one cleaning gas according to claim 1 which is selected from the group consisting of CO 2 and H 2 O. Ｈｅ、Ａｒ、Ｎ2、Ｎｅ、ＫｒおよびＸｅからなる群から選ばれる少なくとも１種の希釈ガスを含む請求項１〜８のいずれかに記載のクリーニングガス。 He, Ar, N 2, Ne , cleaning gas according to claim 1 comprising at least one diluent gas selected from the group consisting of Kr and Xe. Ｈｅ、ＡｒおよびＮ2からなる群から選ばれる少なくとも１種の希釈ガスを含む請求項１〜８のいずれかに記載のクリーニングガス。He, cleaning gas according to claim 1 comprising at least one diluent gas selected from the group consisting of Ar and N 2. 請求項１〜１０のいずれかに記載のクリーニングガスを用いることを特徴とする半導体または液晶製造装置のクリーニング方法。The cleaning method of a semiconductor or liquid crystal manufacturing apparatus characterized by using a cleaning gas as claimed in any one of claims 1 to 10. 請求項１〜１０のいずれかに記載のクリーニングガスを励起することによりプラズマを生成させ、該プラズマ中で半導体製造装置内の堆積物のクリーニングを行う請求項１１に記載のクリーニング方法。Plasma is generated by exciting the cleaning gas according to any one of claims 1 to 10, the cleaning method according to claim 11 for cleaning the deposits in the semiconductor manufacturing device in the plasma. プラズマの励起源がマイクロ波である請求項１２に記載のクリーニング方法。The cleaning method according to claim 12 , wherein the plasma excitation source is a microwave. ５０〜５００℃の温度範囲でクリーニングガスを使用する請求項１１〜１３のいずれかに記載のクリーニング方法。The cleaning method according to claim 11 , wherein the cleaning gas is used in a temperature range of 50 to 500 ° C. ２００〜５００℃の温度範囲においてクリーニングガスをプラズマレスで使用する請求項１１に記載のクリーニング方法。The cleaning method according to claim 11 , wherein the cleaning gas is used without a plasma in a temperature range of 200 to 500 ° C. 請求項１〜１０のいずれかに記載のクリーニングガスを用いるクリーニング工程と、該クリーニング工程から排出されるフッ素化合物を含有するガスを分解する分解工程を有することを特徴とする半導体デバイスの製造方法。A cleaning step using a cleaning gas according to any one of claims 1 to 10, a method of manufacturing a semiconductor device characterized by having a decomposition step of decomposing the gas containing fluorine compounds discharged from the cleaning step. 前記フッ素化合物がＳｉＦ4、ＨＦ、ＣＦ4、ＮＦ3およびＷＦ6からなる群から選ばれる少なくとも１種の化合物である請求項１６に記載の半導体デバイスの製造方法。The method for manufacturing a semiconductor device according to claim 16 , wherein the fluorine compound is at least one compound selected from the group consisting of SiF 4 , HF, CF 4 , NF 3 and WF 6 .
JP2001379401A 2001-12-13 2001-12-13 Cleaning gas and cleaning method of semiconductor manufacturing apparatus Pending JP2003178986A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001379401A JP2003178986A (en) 2001-12-13 2001-12-13 Cleaning gas and cleaning method of semiconductor manufacturing apparatus
PCT/JP2002/013002 WO2003054247A2 (en) 2001-12-13 2002-12-12 Cleaning gas composition for semiconductor production equipment and cleaning method using the gas
KR10-2003-7009691A KR20040065154A (en) 2001-12-13 2002-12-12 Cleaning gas for semiconductor production equipment and cleaning method using the gas
TW91136000A TW571366B (en) 2001-12-13 2002-12-12 Cleaning gas for semiconductor production equipment and cleaning method using the gas
CN 02804007 CN1592798A (en) 2001-12-13 2002-12-12 Cleaning gas for semiconductor production equipment and cleaning method using the gas
US10/250,924 US20040231695A1 (en) 2001-12-13 2002-12-12 Cleaning gas for semiconductor production equipment and cleaning method using the gas
AU2002366920A AU2002366920A1 (en) 2001-12-13 2002-12-12 Cleaning gas composition for semiconductor production equipment and cleaning method using the gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001379401A JP2003178986A (en) 2001-12-13 2001-12-13 Cleaning gas and cleaning method of semiconductor manufacturing apparatus

Publications (2)

Publication Number Publication Date
JP2003178986A JP2003178986A (en) 2003-06-27
JP2003178986A5 true JP2003178986A5 (en) 2005-07-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001379401A Pending JP2003178986A (en) 2001-12-13 2001-12-13 Cleaning gas and cleaning method of semiconductor manufacturing apparatus

Country Status (3)

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JP (1) JP2003178986A (en)
CN (1) CN1592798A (en)
TW (1) TW571366B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4686157B2 (en) 2004-09-29 2011-05-18 株式会社東芝 Cleaning method for film forming apparatus
CN101466873B (en) * 2006-04-10 2012-09-26 苏威氟有限公司 Etching process
WO2008012665A1 (en) * 2006-07-27 2008-01-31 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of cleaning film forming apparatus and film forming apparatus
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
CN102754201A (en) * 2009-10-26 2012-10-24 苏威氟有限公司 Etching process for producing a tft matrix
JP5751895B2 (en) * 2010-06-08 2015-07-22 株式会社日立国際電気 Semiconductor device manufacturing method, cleaning method, and substrate processing apparatus
JP6097192B2 (en) * 2013-04-19 2017-03-15 東京エレクトロン株式会社 Etching method
CN105537207B (en) * 2015-12-11 2018-09-25 上海交通大学 A kind of cleaning method of high temperature quartz ampoule
CN106637133A (en) * 2016-12-26 2017-05-10 苏州工业园区纳米产业技术研究院有限公司 PECVD reaction cavity cleaning method and clean gas
JP7276343B2 (en) * 2018-08-30 2023-05-18 三菱ケミカル株式会社 Cleaning liquid, cleaning method, and semiconductor wafer manufacturing method

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