JP2003166050A - Vacuum arc vapor-deposition method, and apparatus therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize vacuum arc vapor-deposition having uniform film-forming characteristics by preventing the degradation of the film-forming characteristics caused by a divergent magnetic field around a termination magnet surrounding a duct. <P>SOLUTION: When evaporating a cathode material 19 by arc discharge from an evaporation source 11 located in one end of a curving or inflecting duct 9, forming a magnetic filter 22 by arranging magnets so as to surround duct 9, at each of several positions of the duct 9, generating a deflected magnetic field 17' in the duct 9 by the filter 22, transporting a plasma stream 23 including ions of a cathode material 19 from one end of the duct 9 to an emitting port 13 at the other and while removing coarse particles, drawing the ions of the plasma stream 23 from the emitting port 13 to a film forming chamber 1, flying them toward a substrate 6 in the film forming chamber 1, and depositing the cathode material 19 onto the substrate 6, this method is characterized by installing the termination magnet nearest to the emitting port 13 (an electromagnetic coil 21), so as to tilt against the discharging plane of the emitting port 13, to control the flying direction of ions. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum arc evaporation method for forming a thin film on the surface of a base material in order to improve the wear resistance of the base material such as automobile parts, machine parts, tools and molds. And its device.

[0002]

2. Description of the Related Art Generally, vacuum arc vapor deposition is a simple thin film forming method in which an arc discharge is generated between a cathode and an anode to evaporate a cathode material and deposit it on a substrate, and is characterized by high productivity. have.

However, from the cathode material (and depending on the discharge state, from the cathode), large lumps of coarse particles (droplets) with a diameter of several μm are ejected, and these droplets adhere to the substrate to form a film. It is known that the characteristics deteriorate.

In order to prevent the film-forming characteristics from being deteriorated by the droplets, a magnetic field is generated between the cathode and the base material while using a magnet such as an electromagnetic coil, and the magnetic field removes the droplets so that the plasma flow is reduced. There are proposed a vapor deposition method of transporting only the above toward the substrate along a magnetic field, and a vapor deposition method of melting the droplets by concentrating and densifying the plasma in the magnetic field.

The former vacuum arc vapor deposition method and apparatus for transporting only the plasma flow toward the substrate is disclosed in Japanese Patent Application Laid-Open No. 2001-59165 (C23) filed by the present applicant.
C14 / 32) and the like.

The conventional vacuum arc vapor deposition apparatus (arc type ion braiding apparatus) described in this publication is formed as shown in the plan view of FIG.

The metal-made grounded vacuum container 2 forming the film forming chamber 1 is evacuated from an exhaust port 3 on the right side by a vacuum exhaust device (not shown), and an argon gas or the like is supplied from a gas inlet port 4 on the left side. Inert gas or reactive gas is introduced.

Further, in the above-mentioned publication, a structure in which a plurality of base materials are attached to the cylindrical holder of the film forming chamber 1 is shown, but in FIG. One flat plate-shaped holder 5 is rotatably provided substantially in the center of 1 with its surface facing forward, and the base material 6 is detachably held on the front surface side of this holder 5.

This substrate is connected to the cathode of a bias power source 7 through a holder 5, and the substrate 6 is DC biased with respect to the vacuum container 2 typically at -50V to -500V.

Reference numeral 8 in the drawing is an insulator of the rear plate 2'of the vacuum container 2 for insulating the cathode of the bias power source 7.

Next, in front of the vacuum container 2, a metal duct 9 having a rectangular cross section which is curved in a substantially "U" shape is provided. This duct 9 is connected to a grounded end plate 9'of one end on the front side. An evaporation source 11 is provided in the center through an insulator 10, and the evaporation source 11 has an anode power source of several tens of volts and an arc power supply 1
The two cathodes are connected, the duct 9 forms the anode and the evaporation source 11 forms the cathode.

Incidentally, instead of using the duct 9 also as an anode, an anode electrode may be provided separately from the duct 9.

The evaporation source 11 also includes a water cooling mechanism, a vacuum sealing mechanism, a trigger mechanism, etc., which are not shown.

Further, the other end of the duct 9 is attached to the central portion of the front plate 2 "of the vacuum container 2, and the discharge port 13 at the other end of the duct 9 communicates with the film forming chamber 1 at this time. The center of the discharge surface in the left-right direction (horizontal direction) of the holder 5 and the base material 6
Overlap the center of.

Next, the electromagnetic coil 1 as a magnet that surrounds the duct 9 is provided at each of a plurality of positions between both ends of the duct 9.
4 ', 14 are provided.

At this time, conventionally, the electromagnetic coil 14 'as the terminal magnet closest to the emission port 13 and the other electromagnetic coil 14 are all formed to have the same size (dimension).

Further, the electromagnetic coils 14 ', 14 are connected in series between both ends of the output of the coil power source 15 as a current source, and the control of the coil current of the controller 16 controls the energization of the electromagnetic coils 14', 14. Due to the energization of the respective electromagnetic coils 14 ', 14 based on this control, the deflection magnetic field 1 curved along the duct 9 shown by the loop of the solid arrow in the figure.
7 is formed, and this magnetic field 17 forms a magnetic filter 18.

Then, the evaporation source 11 is formed by vacuum arc discharge between the duct 9 which is the anode and the evaporation source 11 which is the cathode.
Cathode material 1 of a conductor such as a single metal such as Ti, Cr, Mo, Ta, W, Al or Cu, or an alloy such as TiAl
9 evaporates.

Furthermore, a plasma stream 20 indicated by a dashed arrow containing electrons generated by the arc discharge and ions of the cathode material 19 is transported from one end of the duct 9 to the emission port 13 at the other end along the deflection magnetic field 17.

At this time, the droplets ejected from the evaporation source 11 are either electrically neutral or are negatively charged in the plasma, but in any case, the mass is very large. Regardless of the deflection magnetic field 17, go straight, and the duct 9
Is removed by colliding with the inner wall of the.

Then, the cathode material 1 that has reached the emission port 13
The ions of 9 are extracted into the film forming chamber 1 on the basis of a large negative potential bias of the substrate 6 by the bias power source 7 and
On the surface of the base material 6, and a vapor deposition film of the cathode material 19 is formed on the surface of the base material 6.

When a reactive gas is introduced into the film forming chamber 1 through the gas inlet 4 in association with the extraction of the ions of the cathode material 19, this gas reacts with the ions of the cathode material 19 and the A metal compound thin film such as titanium carbide or titanium nitride is deposited on the surface.

[0023]

In the vacuum arc vapor deposition of the conventional apparatus shown in FIG. 9, the electromagnetic coil 1 of the terminal magnet is used.
4'is installed parallel to the discharge surface of the discharge port 13 and the substrate 6.

On the other hand, considering the state in which electrons are transported in a uniform magnetic field, as is well known, the electrons are
Receives the Lorentz force F of the formula.

[0025]

## EQU1 ## F = v × B (v: velocity vector of electron, B: vector of magnetic flux density, × is vector product (outer product) operator)

The Lorentz force F causes the electrons to spirally rotate while advancing along the lines of magnetic force of the deflection magnetic field 17.

Then, the ions of the cathode material 19 travel in the duct 9 so as to be attracted by the electrons and are transported to the emission port 13.

By the way, in the vicinity of the electromagnetic coil 14 'of the terminal magnet, a divergent magnetic field is generated as shown by the magnetic force lines of solid arrows in FIGS. 10 (a) and 10 (b), and the electrons arriving at the emission port 13 have this divergent magnetic field. Fly along.

10 (a) and 10 (b) are shown in FIG.
FIG. 3 is a plan view and a right side view showing magnetic lines of force when only every other two electromagnetic coils 14, 14 ′ of the individual electromagnetic coils 14, 14 ′ are energized.

The flight trajectory of the electrons along the lines of magnetic force corresponds to the flight trajectory of the ions of the cathode material 19 which is pulled by the electrons and moves, and the trajectory of the ions of the cathode material 19 can be grasped from the flight trajectory of the electrons.

The flight trajectories of the electrons based on the magnetic lines of force in FIGS. 10A and 10B are shown by the solid lines in the plan view and the right side view of FIGS. 11A and 11B.

That is, the divergent magnetic field causes the electron arrival position of the substrate to be largely deflected leftward from the center of the substrate 6 according to the direction of the curve, and to be largely diverged in the vertical direction (vertical direction). .

If the divergent magnetic field is B, this magnetic field B
And a charged particle such as an electron drifts in the direction in which the right-hand screw advances when rotated so that the gradient ∇B overlaps the magnetic field B at the velocity V _B shown in the following equation (2). , This ∇B drift further shifts the electron trajectory.

[0034]

[Formula 2] VB = −μ · (∇B × B) / (q · B2),
(Μ: permeability, q: charge, B: magnetic field vector, ∇B: gradient vector of magnetic field B, × is an operator of vector outer product, · is an operator of vector inner product)

Therefore, the ions of the cathode material 19 cannot be made to fly around a desired position such as the center of the surface of the substrate 6.

The duct 9 and the electromagnetic coils 14, 1
When 4'has a rectangular cross section, rectangular electromagnetic coils 14, 14 '
On the basis of the magnetic field characteristics of, the gradient ∇B of the magnetic field becomes stronger as it gets closer to the outside than the central part, so the drift velocity in the obliquely downward direction becomes large, and the upward divergence of the flying position of the cathode material 19 causes Greater downward divergence.

Since the center of ion deposition of the cathode material 19 cannot be controlled, for example, at the center of the surface of the base material 6, the direction of the coil current flowing through the electromagnetic coils 14, 14 'is periodically changed. Even if the ion implantation position of the cathode material 19 is periodically shifted by switching in the opposite direction, the cathode material 19 cannot be deposited on the base material 6 by depositing a thin film at a desired position, so that it is uniform. However, there is a problem that it cannot be said that sufficient film formation characteristics are obtained.

In the present invention, the terminal magnet (electromagnetic coil 14 ') is used.
It is an object of the present invention to prevent the horizontal displacement of the vapor deposition position of the cathode material 19 and the vertical divergence of the cathode material 19 due to the divergent magnetic field in the vicinity of, and to form a uniform vapor deposition thin film on the substrate 6.
Further, another object is to further control the film forming characteristics by freely controlling the ion arrival position of the cathode material 19 to the base material.

[0039]

In order to solve the above-mentioned problems, in the vacuum arc vapor deposition method according to claim 1 of the present invention, the terminal magnet closest to the emission port is installed tilted with respect to the emission surface of the emission port. Then, the flying direction of the ions of the cathode material is controlled by the magnetic field generated by the terminal magnet.

Therefore, unlike the conventional case where the magnetic field generated by the terminating magnet is installed parallel to the emitting surface as in the conventional case, the terminating magnet is installed at an appropriate angle with respect to the emitting surface, so that the cathode material Ions will be scattered to the center of the substrate surface.

Further, by setting the installation angle of the terminal magnet variously, the ions of the cathode material can be made to fly to a desired position on the surface of the base material, and a vapor deposition film can be formed with desired film forming characteristics. it can.

Next, in the case of the vacuum arc vapor deposition method according to claim 2 of the present invention, the installation angle of the terminal magnet is made variable.

Therefore, the installation angle of the terminal magnet can be freely changed before and during film formation, and vapor-deposited thin films having various film formation characteristics can be formed freely.

Next, in the case of the vacuum arc vapor deposition method according to claim 3 of the present invention, the size of the terminal magnet is different from that of the other magnets.

Therefore, regarding the divergent magnetic field of the terminal magnet,
In particular, the vertical divergence can be controlled in various ways by changing the size of the terminal magnet. For example, if the terminal magnet is made larger than the other magnets, the magnetic field on the substrate side from the emission port can be controlled. It is possible to satisfactorily suppress vertical divergence and prevent vertical spread of vapor deposition particles (ions) of the cathode material, and to form a uniform film with better characteristics than those of claim 1 or 2. You can do it.

In the vacuum arc vapor deposition method of claims 1, 2 and 3, it is practical and preferable that each magnet is composed of an electromagnetic coil. Further, it is preferable that the installation angle of the terminal magnet is automatically controlled.

Further, it is more preferable from the standpoint of film formation characteristics that each magnet is composed of an electromagnetic coil and the coil current of the electromagnetic coil of each magnet is controlled in association with the control of the installation angle of the terminal magnet.

Next, if a plurality of evaporation sources are used, the film forming ability can be improved and a plurality of kinds of cathode materials can be simultaneously formed.

Further, by switching the direction of the coil current of the electromagnetic coil forming each magnet at regular intervals and reversing it, the drifting direction of the electrons is reversed, so that the ion landing position of the cathode material is cyclically changed. It can be shifted, and uniform vapor deposition of a large area substrate can be performed.

Next, in the vacuum arc vapor deposition apparatus according to claim 9 of the present invention, the terminal magnet closest to the emission port is installed so as to be inclined with respect to the emission surface of the emission port.

Further, the vacuum arc vapor deposition apparatus according to a tenth aspect of the present invention is provided with means for varying the installation angle of the terminal magnet.

Therefore, it is possible to provide the vacuum arc vapor deposition apparatus used in the vapor deposition methods of the first and second aspects.

Further, in the vacuum arc vapor deposition apparatus of the eleventh aspect, the terminal magnet has a size different from that of the other magnets.

Therefore, a vertical magnetic field divergence suppressing function and the like can be added to the vapor deposition device according to the ninth and tenth aspects.

In the vapor deposition apparatus according to the ninth, tenth and eleventh aspects, it is practical that each magnet is composed of an electromagnetic coil, and it is desirable to provide an automatic control means for the installation angle of the terminal magnet.

Further, each magnet is composed of an electromagnetic coil, and means for controlling the coil current of the electromagnetic coil of each magnet in association with the control of the installation angle of the terminal magnet is provided in order to improve the film forming characteristics. Is more preferable.

Further, there may be a plurality of evaporation sources,
It is more preferable to include an energization control unit that switches the direction of the coil current of the electromagnetic coil forming each magnet at regular intervals to reverse the direction.

[0058]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a plan view of a vacuum arc vapor deposition apparatus corresponding to FIG. 9, and the same symbols as those in the drawings denote the same elements.

In FIG. 1, instead of the electromagnetic coil 14 'as the terminal magnet in FIG. 9, an electromagnetic coil 21 larger than the other electromagnetic coils 14 is provided as the terminal magnet.

The electromagnetic coil 21 is formed in a rectangular frame shape as shown in the perspective view of FIG. 2, and as shown in the plan view and the right side view of the duct mounting state of FIGS. 3 (a) and 3 (b). If the left-right direction is the X-axis direction (left is positive), the front-back direction is the Y-axis direction (rear is positive), and the up-down direction is the Z-axis direction (upper is positive),
From the state of the broken line parallel to the emission surface of the emission port 13, the device is installed with an angle α in the plane of the XY axis and an angle β in the plane of the YZ axis.

The angles α and β are optimally determined based on the charged particle trajectory analysis simulation and test deposition in advance. In this embodiment, the worker manually attaches the electromagnetic coil 21 to the duct 9. By adjusting the angle and the like, the electromagnetic coil 21 is inclined with respect to the emission surface, either one or both of the angles α and β.

The generated magnetic field of the electromagnetic coil 21 is controlled by the inclinations of the angles α and β, and a magnetic filter 22 having a deflection magnetic field 17 'different from the magnetic field 17 of FIG. The filter 22 produces a plasma stream 23 corresponding to the plasma current 20 of FIG.

At this time, as shown in the plan view and the right side view of the electron trajectories of FIGS. 4A and 4B, the trajectories of the electrons reaching the surface of the substrate 6 through the duct 9 are It is corrected so that the center of the base material reaching position of 1 substantially coincides with the center of the surface of the base material 6.

4A and 4B show the effect of the installation angle of the electromagnetic coil 21, the electromagnetic coil 21
Instead of the above, an electromagnetic coil 21 'having the same size as the other electromagnetic coil 14 is provided, and its installation angle α is set to 15 degrees in the clockwise direction to show the electron trajectory when the divergence of the magnetic field in the left-right direction is converged and corrected. As in FIGS. 11 (a) and 11 (b), only the two electromagnetic coils 21 'and 14 in the alternate solid line are energized.

Next, the electromagnetic coil 21 is different in size from the other electromagnetic coils 14, and in this embodiment, it is larger than the other electromagnetic coils 14 in order to suppress the divergence of the vertical magnetic field.

When the electromagnetic coil 21 is made larger than the other electromagnetic coils 14, the function of magnetic field focusing on the vertical magnetic field is added, and the vertical magnetic field is converged and corrected. For example, as shown in FIG. As shown in the plan view and the right side view of the electron trajectory of (b), it was confirmed by experiments that the trajectory of the electrons in the vertical direction is corrected toward the center of the surface of the substrate 6.

5 (a) and 5 (b) show the electron when the installation angle α of the electromagnetic coil 21 is set to 15 degrees in the clockwise direction and the size thereof is set to 120% of the other electromagnetic coils 14. This is a locus, and as in the case of FIGS. 4A and 4B, only the two electromagnetic coils 21 and 14 in alternate lines are energized.

Then, as is clear from FIGS. 4 and 5,
Since the electron trajectory is corrected toward the center in both the left-right direction and the up-down direction near the surface of the base material 6, the ions in the cathode material 19 are also corrected for the deviation in the landing in the left-right direction and the up-down direction and the diffusion toward the center. As a result, a uniform film can be formed on the surface of the base material 6.

Next, concrete experimental results will be described. First, the emission surface of the emission port 13 and the base material 6 are set so that the centers thereof are superposed and the distance between them is 400 mm, and the electromagnetic coil 21 is set under the condition of a coil current of 100 A. Installation angle α of 15 degrees clockwise,
At 20 degrees and 25 degrees, the deviation of the arrival position of the electron trajectory on the surface of the substrate 6 from the center of the surface of the substrate 6 in the left-right direction (horizontal direction) and the vertical direction (vertical direction) is as shown in FIG. became.

In FIG. 6, ♦ indicates a plot of a reference (reference coil) whose installation angle α is 0 degree, and ■, △,
● is a plot when the installation angle α is tilted by 15 °, 20 °, and 25 °.

Further, when the installation angle α is set to 15 degrees and the coil current is set to 30 A, 50 A and 100 A, the deviation of the electron trajectory becomes as shown in FIG.

In FIG. 7, ♦ is a plot of a reference in which the installation angle α is 0 degree and the coil current is 50 A, ■, Δ,
● indicates an installation angle α of 15 degrees and a coil current of 30A, 50
It is a plot at A and 100A.

As is clear from FIGS. 6 and 7, when the installation angle α is appropriately set according to the coil current and the electromagnetic coil 21 is appropriately inclined with respect to the emission surface of the emission port 13, Due to the influence, particularly the electron arrival position on the surface of the base material 6 in the left-right direction is corrected toward the center of the base material 6, and the cathode material 19 is vapor-deposited around the center part of the surface of the base material 6.

Next, the installation angle α is set to 15 degrees, and the electromagnetic coil 2 is operated under the conditions of the coil currents of 30A, 50A and 100A.
When the size of 1 was set to 80%, 100%, and 120%, the results of (a), (b), and (c) of FIG. 8 were obtained.

In FIGS. 8A, 8B and 8C,
◆ is a plot of a reference of 100% size when the installation angle α is 0 degree, and ■, △, ● are 80 when the installation angle α is 15 degrees.
The plots when the sizes are 100%, 120% and 120% are shown.

Similarly to the case of Δ, the ▲ in FIG. 8B is a plot when the installation angle is 15 degrees and the magnitude is 100% and the direction of the coil current is opposite to the other plots. Indicates.

As is clear from FIGS. 8A, 8B and 8C, if the electromagnetic coil 21 is increased to 120%, the divergence of the magnetic field is suppressed and the surface of the substrate 6 is suppressed. The vertical electron arrival position is also corrected toward the center of the base material 6,
The cathode material 19 is more favorably vapor-deposited centering on the central portion of the surface of the base material 6, and uniform film formation is performed.

That is, in the case of this embodiment, the electromagnetic coil 21 as a terminal magnet is installed so as to incline one or both of the angles α and β with respect to the emission surface of the emission port 13, and
Since the electromagnetic coil 21 is made larger than the other electromagnetic coils 14, the flying direction of the ions of the cathode material 19 is controlled in the left-right direction and the vertical direction to correct it toward the center, and the cathode material 19 is
The central portion of the surface of the base material 6 is made to fly around and vapor deposited to form the base material 6
A uniform evaporated thin film can be formed on the surface.

By the way, in the above-described embodiment, the cathode material 19 is corrected so that the cathode material 19 is sprayed around the center of the surface of the base material 6 to be deposited, but depending on the base material 6, the position away from the center portion of the surface is centered. In some cases, vapor deposition is preferred.

In such a case, one or both of the angles α and β may be set according to the purpose, and vapor deposition may be performed centering on an arbitrary position on the surface of the base material 6.

Next, in the above-mentioned embodiment, the electromagnetic coil 21 is pre-inclined by the angles α and β manually by the worker, but for example, the electromagnetic coil 21 is rotated in the plane of the XX axis and the angle is changed. Either the jig for changing α or the jig for rotating the electromagnetic coil 21 in the plane of the Z-Y axis to change the angle β thereof, or both, can freely set the installation angle of the electromagnetic coil 21. It may be provided as a variable means, and the installation angle of the electromagnetic coil 21 may be initialized based on the result of the test film formation in advance, or the installation angle of the electromagnetic coil 21 may be changed during the actual vapor deposition.

Further, in the above-mentioned embodiment, the terminal magnets and the other magnets are both electromagnetic coils 21 and 14, but these magnets may be so-called permanent magnets.

Further, in the above-mentioned embodiment, the case where the number of the evaporation sources 11 is one has been described for simplification of description, but when the substrate 6 has a large area or a plurality of kinds of cathode materials are vapor-deposited at the same time, etc. For example, a plurality of evaporation sources 11 may be provided vertically, for example.

Next, the installation angle of the terminating magnet is set to, for example, the control device 24 of FIG. 1 provided instead of the control device 16 of FIG.
Based on the measurement of the film thickness on the surface of the substrate 6 by a film thickness meter (not shown), the automatic control means formed by the sequence control, program control, etc. It is practical to automatically control the tool and automatically set it by this automatic control or automatically change it during the film formation, and it is also preferable from the viewpoint of the efficiency of the film formation operation.

Further, when each magnet is composed of the electromagnetic coils 14 and 21, the energization control means of the controller 24 controls the installation angles α and β of the electromagnetic coil 21 during film formation based on the measurement of the film thickness meter. Each electromagnetic coil 14, 21 interlocked with the control
If the coil current is controlled, the film can be formed with higher accuracy.

Next, the energization control means of the control device 24 switches the direction of the coil current of each of the electromagnetic coils 14 and 21 at regular time intervals to reverse the direction.
The direction of the gradient ∇B of the magnetic field B does not change, but since the direction of the magnetic field B changes and changes, the drift velocity that acts on the transport of the plasma flow 23 changes, and the cathode material 19 fly to the surface of the base material 6. By changing the deposition direction, the film thickness distribution can be made more uniform, and the film forming characteristics are further improved.

Further, if the coil current of each electromagnetic coil 21, 14 is obtained from the AC power supply, each electromagnetic coil 21, 1 can be operated without switching by the energization control means.
It is possible to reverse the current direction of No. 4 at regular intervals.

Next, in the above-mentioned embodiment, the duct 9 has a rectangular cross section, but the duct 9 may have a circular cross section, an elliptical cross section, or the like. The cross section is also preferably circular or elliptical.

In the above embodiment, one duct 9 is connected to the vacuum container 2 to form the vacuum arc vapor deposition apparatus. However, a plurality of ducts are connected to the vacuum container 2 and the end magnets of each duct are You may make it incline with respect to the discharge surface of the discharge port of each duct, respectively.

Further, in the above-mentioned embodiment, in order to simplify the explanation, one holder 5 is provided in the film forming chamber 1 and one substrate 6 is vapor-deposited to form a film. Like the arc type ion braiding device described in the above publication,
The present invention can be similarly applied to a case where a cylindrical rotary holder is provided in the film forming chamber, and a substrate is held on each surface of the holder to perform vacuum arc vapor deposition of a plurality of substrates. .

Next, in the above-mentioned embodiment, the electromagnetic coil 21 is made larger than the other electromagnetic coils 14 and the terminal magnet is made larger than the other magnets. However, depending on the film forming conditions such as the distance between the discharge port 13 and the substrate 6 being short. In some cases, the termination magnet may be made smaller than other magnets to obtain good film formation characteristics. In such a case, the termination magnet may be made smaller than the other magnets.

Further, although the case where the curved duct 9 is used has been described in the above embodiment, the present invention can be similarly applied to the case where the bent duct is used instead of the duct 9.

Next, in order to further improve the film formation characteristics, not only the installation angle of the terminal magnetic field (electromagnetic coil 21) in the left and right direction or the up and down direction but also both of them is adjusted. For all or part of the magnet (electromagnetic coil 14), it is preferable to adjust the installation angle in one or both of the left-right direction and the up-down direction, similarly to the terminal magnet.

[0094]

The present invention has the following effects. First, in the case of the vacuum arc vapor deposition method according to claim 1, the terminal magnet (electromagnetic coil 21) closest to the emission port 13 is installed inclined with respect to the emission surface of the emission port 13, and the cathode material is generated by the magnetic field generated by the termination magnet. Since the flying direction of 19 ions is controlled, the deflection magnetic field generated by the terminal magnet is different from the conventional case where the terminal magnet is installed parallel to the emission surface.
The ions of 9 are controlled so as to reach the central portion of the surface of the base material 6, and a uniform vapor deposition film can be formed.

Further, by setting the installation angle of the terminal magnet in various ways, the ions of the cathode material 19 are made to fly around the desired position on the surface of the base material, and the deposited film is formed with the desired film forming characteristics. A film can be formed.

Next, in the vacuum arc vapor deposition method of claim 2, since the installation angle of the terminal magnet is made variable, the installation angle of the terminal magnet can be freely changed before and during film formation. It is possible to freely form vapor-deposited thin films having various film forming characteristics.

Next, in the case of the vacuum arc vapor deposition method of claim 3, since the terminal magnet has a different size from other magnets,
Regarding the divergent magnetic field of the terminating magnet, the divergence in the vertical direction can be controlled in various ways by changing the size of the terminating magnet. Satisfactorily suppresses the divergence of
It is possible to obtain more uniform characteristics than the film forming characteristics of 2.
It is practical and preferable that each magnet is composed of the electromagnetic coils 14 and 21. Further, it is practically preferable that the installation angle of the terminal magnet is automatically controlled.

Furthermore, each magnet is composed of electromagnetic coils 14 and 21, and the coil current of the electromagnetic coils 14 and 21 of each magnet can be controlled in conjunction with the control of the installation angle of the terminal magnet.
It is more preferable from the viewpoint of film forming characteristics.

Next, if a plurality of evaporation sources 11 are used, the film forming ability can be improved and a plurality of kinds of cathode materials 19 can be formed simultaneously.

Further, the electromagnetic coil 14 forming each magnet,
If the direction of the coil current of 21 is switched at regular intervals and reversed, the ion deposition position of the cathode material 19 can be periodically shifted, and uniform vapor deposition of the large-area substrate 6 is performed. be able to.

Next, the vacuum arc vapor deposition apparatus according to claims 9 to 16 can provide a concrete apparatus for realizing each of the above-mentioned vacuum arc vapor deposition methods.

[Brief description of drawings]

FIG. 1 is a plan view of a vacuum arc vapor deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view of an electromagnetic coil as a terminal magnet of FIG.

3 (a) and 3 (b) are explanatory views of the inclination of the electromagnetic coil of FIG.

4A and 4B are a plan view and a right side view of an electron trajectory explanatory diagram when an electromagnetic coil as a terminal magnet is inclined by an angle α = 15 degrees.

5 (a) and 5 (b) are plan views of an electron trajectory explanatory diagram when an electromagnetic coil serving as a terminal magnet is tilted at an angle α = 15 degrees and its dimension is made larger than those of other magnets. It is a right side view.

FIG. 6 is an actual measurement result of an electron arrival position when an angle α of an electromagnetic coil as a terminal magnet is changed.

FIG. 7 is an actual measurement result of electron arrival positions when the coil current is changed by inclining an electromagnetic coil as a terminal magnet at an angle α = 15 degrees.

8 (a), (b) and (c) show a coil current of 30 A with an electromagnetic coil as a terminal magnet inclined at an angle α = 15 degrees.
It is the measurement result of the electron arrival position due to the difference in the size (coil size) when it is set to 50A and 100A.

FIG. 9 is a plan view of a conventional device.

10A and 10B are a plan view and a right side view of a divergent magnetic field explanatory diagram of the conventional device of FIG.

11 is a plan view of an electron trajectory explanatory diagram of the conventional device of FIG. 9;
It is a right side view.

[Explanation of symbols]

1 Film forming chamber 6 base material 9 ducts 11 evaporation sources 13 outlet 14,21 electromagnetic coil 17 'deflection magnetic field 19 Cathode material 22 Magnetic filter 23 Plasma flow

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kiyoshi Ogata             47 Umezu Takaune Town, Ukyo-ku, Kyoto Nissin Electric             Within the corporation (72) Inventor Hiroshi Murakami             47 Umezu Takaune Town, Ukyo-ku, Kyoto Nissin Electric             Within the corporation F term (reference) 4K029 DB14 DD06 EA00 EA07 EA09

Claims (16)

[Claims] 1. A magnetic filter is formed by evaporating a cathode material by arc discharge from an evaporation source located at one end of a curved or bent duct, and providing a magnet surrounding the duct at each of a plurality of positions of the duct, A deflection magnetic field is generated inside the duct by the magnetic filter, and based on the deflection magnetic field, coarse particles generated by the evaporation are removed, and a plasma flow containing ions of the cathode material is applied from one end to the other end of the duct. Vacuum arc vapor deposition method of transporting the ions of the plasma flow to the film formation chamber from the emission port and ejecting the ions to the substrate of the film formation chamber to deposit the cathode material on the substrate. In, the terminal magnet closest to the emission port is installed so as to be inclined with respect to the emission surface of the emission port, and the flying direction of the ions is controlled by the magnetic field generated by the termination magnet. Vacuum arc deposition method comprising and. 2. The vacuum arc vapor deposition method according to claim 1, wherein the installation angle of the terminal magnet is variable. 3. The vacuum arc vapor deposition method according to claim 1, wherein the terminal magnet has a size different from that of the other magnets. 4. The vacuum arc vapor deposition method according to claim 1, wherein each magnet comprises an electromagnetic coil. 5. The vacuum arc vapor deposition method according to claim 1, 2, 3 or 4, wherein the installation angle of the terminal magnet is automatically controlled. 6. The magnet according to claim 1, wherein each magnet is composed of an electromagnetic coil, and the coil current of the electromagnetic coil of each magnet is controlled in association with the control of the installation angle of the terminal magnet.
The vacuum arc vapor deposition method according to 3, 4, or 5. 7. The vacuum arc vapor deposition method according to claim 1, 2, 3, 4, 5, or 6, wherein a plurality of evaporation sources are provided. 8. A vacuum according to claim 1, 2, 3, 4, 5, 6 or 7, wherein the directions of the coil currents of the electromagnetic coils forming each magnet are switched at regular intervals to be reversed. Arc vapor deposition method. 9. A film forming chamber provided with a base material, a curved or bent duct, an evaporation source located at one end of the duct for evaporating a cathode material by arc discharge in vacuum, and the film forming process. Coarse particles that are formed by providing a discharge port at the other end of the duct that communicates with the chamber and magnets that surround the duct at a plurality of locations in the duct, generate a deflection magnetic field in the duct, and generate by the evaporation. And a magnetic filter that transports a plasma flow containing ions of the cathode material from one end of the duct to the discharge port while removing the ions of the plasma flow from the discharge port to the film forming chamber. In a vacuum arc vapor deposition apparatus for spraying on the base material and vapor-depositing the cathode material on the base material, a terminal magnet closest to the emission port is installed so as to be inclined with respect to the emission surface of the emission port. You Vacuum arc vapor deposition equipment. 10. The vacuum arc vapor deposition apparatus according to claim 9, further comprising means for varying the installation angle of the terminal magnet. 11. The vacuum arc vapor deposition apparatus according to claim 9, wherein the terminal magnet has a size different from that of the other magnets. 12. The vacuum arc vapor deposition apparatus according to claim 9, 10 or 11, wherein each magnet comprises an electromagnetic coil. 13. The automatic control means for controlling the installation angle of the terminal magnet is provided.
The vacuum arc vapor deposition apparatus described. 14. Each of the magnets is composed of an electromagnetic coil, and means for controlling the coil current of the electromagnetic coil of each of the magnets is provided in association with the control of the installation angle of the terminal magnet. 11. 11. The vacuum arc vapor deposition apparatus according to 12 or 13. 15. The vacuum arc vapor deposition apparatus according to claim 9, 10, 11, 12, 13 or 14, wherein a plurality of evaporation sources are provided. 16. An energization control means for switching the direction of a coil current of an electromagnetic coil forming each magnet at regular time intervals to reverse the direction is provided.
The vacuum arc vapor deposition apparatus according to 2, 13, 14 or 15.