JP2003158253A - Photoelectric conversion device and x-ray detection device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which is kept high in pattern accuracy, improved in sensitivity, and manufactured at a low cost with high yield through a simple process by improving itself in rate of hole area. SOLUTION: A MIS sensor S11 and a thin film transistor T11 are combined on a substrate for the formation of a two-dimensional photoelectric conversion device. The MIS sensor S11 is laminated on the thin film transistor T11, and a semiconductor layer 507 provided to the MIS sensor S11 is extended on the thin film transistor T11. By this constitution, the full area of a pixel is utilized as a window, and the photoelectric conversion device can be improved in rate of hole area and made simple in manufacturing process.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device used in facsimiles, scanners, etc.
The present invention relates to a high-performance large-area two-dimensional photoelectric conversion device used for reading a radiation image such as a line and an X-ray detection device using the same.

[0002]

2. Description of the Related Art Photoelectric conversion devices have been conventionally used in scanners for computers and the like, but recently, as a new application, large-area two-dimensional photoelectric conversion devices have been proposed and developed for medical purposes. ing. For example, when manufacturing an X-ray detection device for chest imaging, a large-format digital X-ray detection device has been proposed in which a two-dimensional photoelectric conversion device is combined with a fluorescent plate for converting X-rays into visible light.

As such a large-area two-dimensional photoelectric conversion device, a MIS type sensor or a photodiode type sensor made of amorphous silicon, or a thin film transistor arranged two-dimensionally on a substrate is used. Note that non-single-crystal silicon includes amorphous silicon, microcrystalline silicon, and polycrystalline silicon.

FIG. 6A shows a plan view of one pixel of a conventional photoelectric conversion device. FIG. 6B is AB of FIG. 6A.
A cross-sectional view of the line is shown, which is composed of a MIS type optical sensor S and a driving thin film transistor T as a switching unit.

In FIG. 6, reference numeral 1101 denotes a glass substrate, 1
102 is a sensor lower electrode, 1103 is a gate electrode, 110
4 is a gate insulating film, 1105 is a semiconductor layer, 1106 is N
^{A +} type layer, 1107 is a drain electrode, 1108 is a source electrode, 1109 is an insulating layer, S is a photoelectric conversion element, and T is a thin film transistor.

Further, SIG is a signal line, g is a gate line of a thin film transistor, and D and G are an upper electrode and a lower electrode of the MIS sensor, respectively. The charges generated in the sensor S by light are read out by a reading circuit (not shown) through the thin film transistor. Since the sensor S and the thin film transistor T use the same semiconductor layer, the thin film transistor region in the pixel is a cause of reducing the aperture ratio of the sensor.

Further, FIG. 7A shows a plan view of one pixel of another conventional photoelectric conversion device, and FIG. 7B shows FIG.
The sectional view of the A-B line of (a) is shown. In the figure, a PIN photodiode S of hydrogenated amorphous silicon is used as a sensor, and a thin film transistor T using a hydrogenated amorphous silicon semiconductor layer is used as a switching unit.

In FIG. 7, reference numeral 1201 denotes a glass substrate, 1
202 is a sensor lower electrode, 1203, 1212 are N ⁺ type layers, 1204, 1211 are semiconductor layers, 1205 are P ⁺ type layers, 1206 is ITO, 1207 is an interlayer insulating layer, 120
Reference numeral 8 is a common wiring, 1210 is a gate insulating film, 1213 is a drain electrode, 1214 is a source electrode, S is a photoelectric conversion element, and T is a thin film transistor.

Further, SIG is a signal wiring, g is a gate wiring of a thin film transistor, and E is a common electrode of a photodiode. The charges generated in the photodiode S by the light pass through the thin film transistor T in a readout circuit (not shown),
Read out.

In this conventional example, first, a thin film transistor is manufactured, and then a PIN type sensor is stacked. Therefore, the number of times of forming the semiconductor layer increases. Further, the electrode layers also required the gate electrode layer of the thin film transistor, the source / drain electrodes and the sensor lower electrode layer, the transparent electrode layer on the sensor, the sensor common electrode layer and the four electrode layers.

[0011]

In the conventional photoelectric conversion device, since the sensor and the thin film transistor are arranged in one pixel, it is difficult to obtain an aperture ratio of 50% or more while securing the pattern accuracy and the yield. As a result, the sensitivity could not be further improved.

Further, in a structure in which a PIN type photodiode is adopted as a conventional photoelectric conversion element and a thin film transistor is combined with the PIN type photodiode, there is a problem that a laminated structure cannot be avoided, the process becomes complicated and the cost increases.

The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to improve the sensitivity by increasing the aperture ratio of 50% or more while securing the pattern accuracy and the yield. Moreover, it is an object of the present invention to provide a photoelectric conversion device that can be manufactured at a low cost by a simple process and an X-ray detection device using the photoelectric conversion device.

[0014]

In order to achieve the above-mentioned object, a photoelectric conversion device of the present invention is a two-dimensional photoelectric conversion device formed by combining a MIS type sensor and a thin film transistor on a substrate. It is characterized in that the MIS type sensor is laminated on the semiconductor device, and a semiconductor layer of the MIS type sensor extends over the thin film transistor.

Further, an X-ray detection device of the present invention is characterized by including the photoelectric conversion device described above.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail with reference to the drawings.

(First Embodiment) FIG. 1A is a plan view showing a first embodiment of a photoelectric conversion device of the present invention.
(B) is sectional drawing in the AB line. Note that FIG. 1 shows a configuration for one pixel. Further, in the first embodiment, a mode in which the present invention is applied to a two-dimensional photoelectric conversion device in which a MIS type sensor and a thin film transistor are combined will be described.

In FIG. 1, 501 is a glass substrate and 50
2 is a gate electrode, 503 is a gate insulating film, 504, 50
7 is a semiconductor layer, 505 and 509 are N ⁺ type layers, and 506 and 5
Reference numeral 10 is an interlayer insulating layer, 508 is an insulating layer, 511 is a common wiring, 512 is a signal line, S11 is a photoelectric conversion element, T11 is a thin film transistor, SIG is a signal line, and gn is a gate line.

In this embodiment, the MIS sensor is laminated on the substrate on which the thin film transistor is manufactured. At this time, the N ⁺ type layer 505 of the thin film transistor also constitutes the lower electrode of the MIS type sensor. The formation and patterning of the metal layer may be performed twice.

In FIG. 1, a MIS photoelectric conversion element 509 is provided.
Is an N ⁺ -type hydrogenated microcrystalline silicon layer and functions as a window layer. As will be described later, this N ⁺ -type hydrogenated microcrystalline silicon layer also functions as an injection blocking layer (blocking layer) and an electrode layer. Further, the semiconductor layer can be manufactured by appropriately selecting a material from non-single-crystal silicon or a compound thereof.

FIG. 2 shows an equivalent circuit of one pixel of this photoelectric conversion device. It is composed of a MIS type optical sensor S11 and a thin film transistor T11 as a switching unit. SIG
Is a signal wiring. Reference numeral g1 indicates a gate line of the thin film transistor, and D and G indicate upper and lower electrodes of the MIS sensor, respectively. Cgs and Cgd are capacitors due to the overlap of the gate electrode, the source electrode, and the drain electrode of the thin film transistor. The electric charge generated in S11 by light is stored in Cgs and Cgd through the thin film transistor T11, and then the electric charge is read by a reading circuit (not shown). This is the case for 1 bit, but in reality this Cg
s and Cgd are the sum of those of other thin film transistors connected to this gate line. As described above, the storage capacitors use Cgs and Cgd.

Next, the operation of the MIS type sensor will be described with reference to FIG.
Using. 3A and 3B are energy band diagrams of the photoelectric conversion element showing the operation in the refresh mode and the photoelectric conversion mode, respectively. Reference numerals 1 to 5 in the figure show the states of the respective layers in the thickness direction.

In the refresh mode (a), since the D electrode is given a negative potential with respect to the G electrode,
The holes indicated by black circles in the intrinsic hydrogenated amorphous silicon layer 3 are guided to the D electrode by the electric field. At the same time, the electrons indicated by white circles are injected into the intrinsic hydrogenated amorphous silicon layer 3. At this time, some holes and electrons are recombined and disappear in the N ⁺ -type hydrogenated microcrystalline silicon layer 2 and the intrinsic hydrogenated amorphous silicon layer 3. If this state continues for a sufficiently long time, the holes in the intrinsic hydrogenated amorphous silicon layer 3 are swept out from the intrinsic hydrogenated amorphous silicon layer 3.

In this state, in the photoelectric conversion mode (b), since the D electrode is given a positive potential with respect to the G electrode, the electrons in the intrinsic hydrogenated amorphous silicon layer 3 are instantly D Led to the electrodes. However, holes are not introduced into the intrinsic hydrogenated amorphous silicon layer 3 because the N ⁺ -type hydrogenated microcrystalline silicon layer 2 functions as an injection blocking layer. When light is incident on the intrinsic hydrogenated amorphous silicon layer 3 in this state, the light is absorbed and electron-hole pairs are generated. The electrons are guided to the electrode by the electric field, and the holes move in the intrinsic hydrogenated amorphous silicon layer 3 and reach the interface of the hydrogenated amorphous silicon nitride layer 4. It will remain in the crystalline silicon layer 3. At this time, the electrons move to the D electrode, and the holes form the hydrogenated amorphous silicon nitride layer 4 in the intrinsic hydrogenated amorphous silicon layer 3.
Since it moves to the interface, a current flows from the G electrode in order to maintain electrical neutrality in the device. This current corresponds to a pair of electrons and holes generated by light, and thus is proportional to the incident light.

FIG. 4 shows the entire circuit of the photoelectric conversion device. The photoelectric conversion element, the driving thin film transistor, the wiring, and the like can be formed on the same substrate by the same process. In the circuit diagram, S11 to S33 represent photoelectric conversion elements. T
11 to T33 are thin film transistors. Vs is a reading power supply, and Vg is a refreshing power supply, and all photoelectric conversion elements S11 are supplied via switches SWs and SWg, respectively.
~ S33 is connected to the lower electrode G. Switch SWs
Is directly connected to the refresh control circuit RF via an inverter, the switch SWg is ON during the refresh period, and the switch Sg is in other periods.
It is controlled so that Ws is turned on. The signal output is connected to the detection integrated circuit IC by a signal wiring SIG. In FIG. 4, nine pixels are divided into three blocks, and the outputs of three pixels are simultaneously transferred per block, and this signal is sequentially converted into an output by the detection integrated circuit and output. Although a two-dimensional image input unit of 9 pixels is used for ease of explanation, the pixel configuration is actually higher.
For example, if the pixel size is 150 μm square,
When an m-square photoelectric conversion device is manufactured, the number of pixels is approximately 1.
It has 800,000 pixels.

Such a photoelectric conversion device was manufactured by the following manufacturing process.

1. On the cleaned glass substrate (501 in FIG. 1), chromium is deposited to a thickness of 500 Å by sputtering. A pattern of a photoresist was formed in a desired shape on the chrome, etching was performed using this as a mask, and then the photoresist was peeled off and washed to form a gate electrode 502 of the thin film transistor of each pixel.

2. Next, on this, SiH ₄ gas, NH ₃
A hydrogenated amorphous silicon nitride layer 503 was formed by plasma CVD using gas and H ₂ gas. Continued SiH
_A hydrogenated amorphous silicon layer 504 was formed by plasma CVD using ₄ gas and H ₂ gas. Further, an N ⁺ -type hydrogenated microcrystalline silicon layer 505 was formed by plasma CVD using SiH ₄ gas, PH ₃ gas, and H ₂ gas.

3. Photoresist pattern for thin film transistor isolation is made by photolithography process,
Using this as a mask, the hydrogenated amorphous silicon nitride layer, the hydrogenated amorphous silicon layer, and the N ⁺ -type hydrogenated microcrystalline silicon layer were partially removed by dry etching, and the photoresist was peeled off and washed for isolation.

4. After that, a photoresist pattern having a desired shape is formed on this aluminum, and the N ⁺ -type hydrogenated microcrystalline silicon layer in the channel portion of the thin film transistor is etched by using this as a mask. Was formed.

5. Next, on this, SiH ₄ gas, NH ₃
A hydrogenated amorphous silicon nitride layer 506 was formed by plasma CVD using gas and H ₂ gas.

6. Photoresist patterns of contact holes for thin film transistor electrodes and under-sensor electrodes were formed by a photolithography process, and the hydrogenated amorphous silicon nitride layer was partially removed by dry etching using this as a mask to form contact holes.

7. On top of this, SiH_Four Gas, H₂ Gas
Hydrogenated amorphous silicon layer 50 by plasma CVD using
Formed 7. Further SiH_Four Gas, NH₃ Gas, H₂ 
Hydrogenated amorphous silicon nitride by plasma CVD using gas
The recon layer 508 was formed. Continued SiH_Four Gas, P
H₃ Gas, H₂ N by plasma CVD using gas ⁺
A hydrogenated microcrystalline silicon layer 509 was formed. This embodiment
N in the state⁺-Type hydrogenated microcrystalline silicon 509 is an electrode layer and a window
Combines layers.

8. A photoresist pattern for sensor isolation is formed by a photolithography process, and using this as a mask, a hydrogenated amorphous silicon nitride layer, a hydrogenated amorphous silicon layer, and an N ⁺ -type hydrogenated microcrystalline silicon layer are formed as one layer. After removing the portion and washing and removing the photoresist, isolation was performed.

9. A hydrogenated amorphous silicon nitride layer 510 as an interlayer insulating layer was formed by plasma CVD using SiH ₄ gas, NH ₃ gas, and H ₂ gas to a thickness of 5000 Å.

10. A photoresist pattern for a contact hole was formed by a photolithography process, a part of the hydrogenated amorphous silicon nitride layer of the interlayer insulating layer was removed by dry etching, and the photoresist was peeled off and washed, and then a contact hole was formed. In the present embodiment, the contact hole is formed by using chemical dry etching that can control the etching characteristics sensitively depending on the material properties. By using the etching selectivity of the hydrogenated amorphous silicon nitride layer and the N ⁺ -type layer, the over-etching on the sensor can be reduced as much as possible.

11. An aluminum (Al) film having a thickness of 1 μm (μm) was formed thereon by a sputtering method.

12. After that, on this aluminum (Al),
A photoresist pattern was formed in a desired shape, etching was performed using this as a mask, and after the photoresist was peeled off and washed, a common wiring 511 and a signal line 512 of the sensor were formed.

13. Finally, a protective layer (not shown) was provided.

In this embodiment, a MIS type sensor as a sensor is laminated on the thin film transistor. Moreover, the electrode of the thin film transistor is substituted with the N ⁺ -type hydrogenated microcrystalline silicon layer 505, and the N ⁺ -type hydrogenated microcrystalline silicon layer 5 is further substituted.
05 was given the function of the lower electrode layer of the photosensor.

By adopting this structure, it was possible to reduce the number of metal layers as the conventional electrodes required to be three to two.

Further, in this embodiment, since the thin film transistor and the sensor can be optimally designed because they are of the laminated type, the characteristics can be improved.

With these structures, an aperture ratio of 70% or more, which was conventionally 50% or less, can be secured, and as a result, the sensitivity is 1.4 times or more. In the present embodiment, it is considered that the carriers generated by the light absorbed by the semiconductor layer extending on the thin film transistor are sufficiently used as the optical carriers of the sensor.
Since the sensitivity is improved, when this photoelectric conversion device is used for a medical X-ray detection device, it becomes possible to obtain a high-quality image with a smaller X-ray dose. Further, since the incident light is completely absorbed by the semiconductor layer, the thin film transistor is substantially completely shielded from light, and the increase in leak current of the thin film transistor due to the incident light is eliminated. As a result, it was possible to reduce crosstalk and obtain a high quality image.

Further, with the structure and the manufacturing method of this embodiment, it is possible to manufacture a higher quality photoelectric conversion device while suppressing an increase in manufacturing cost.

In this embodiment, the sensor and the thin film transistor are made to use the N ⁺ -type hydrogenated microcrystalline silicon 505, but the P ⁺ -type hydrogenated microcrystalline silicon 505 has a structure in which holes are used instead of electrons. Alternatively, the crystallized silicon may be shared with the sensor. Further, as long as sufficient characteristics can be obtained, it is not limited to using these hydrogenated microcrystalline silicon.

(Second Embodiment) Next, a second embodiment of the present invention will be described. In this embodiment, a simplified process is shown as another embodiment of a two-dimensional photoelectric conversion device in which a MIS sensor and a thin film transistor are combined.

FIG. 5A is a plan view of one pixel of the photoelectric conversion device of this embodiment, and FIG. 5B is a sectional view taken along the line AB of FIG. 5A.

In FIG. 5, reference numeral 901 denotes a glass substrate, and 90
2 is a gate electrode, 903 is a gate insulating film, 904, 90
7 is a semiconductor layer, 905 and 908 are N ⁺ type layers, 906 is an insulating layer, 909 is an interlayer insulating layer, 910 is a common wiring, and 911.
Is a signal line.

In this embodiment, a signal is read from the electrode in contact with the hydrogenated amorphous silicon nitride layer. It is composed of a MIS type optical sensor S11 and a thin film transistor T11 as a photoelectric conversion element driving unit. Further, SIG is a signal wiring. g1 is a gate line of the thin film transistor.

The operation of this embodiment is basically the same as that of the first embodiment.

Although hydrogenated amorphous silicon is basically used for the semiconductor layer of the photoelectric conversion device and the semiconductor layer of the thin film transistor, the semiconductor layer may be appropriately selected from non-single crystal silicon or its compound. it can.

Such a photoelectric conversion device was manufactured by the following manufacturing process.

1. On the cleaned glass substrate (901 in FIG. 5), chromium is formed into a 500 l film by sputtering. A photoresist pattern having a desired shape was formed on the chrome, etching was performed using this as a mask, and then the photoresist was peeled off and washed to form a gate electrode 902 of the thin film transistor of each pixel.

2. Next, on this, SiH ₄ gas, NH ₃
A hydrogenated amorphous silicon nitride layer 903 was formed by plasma CVD using gas and H ₂ gas. Continued SiH
_A hydrogenated amorphous silicon layer 904 was formed by plasma CVD using ₄ gas and H ₂ gas. Further, an N ⁺ -type hydrogenated microcrystalline silicon layer 905 was formed by plasma CVD using SiH ₄ gas, PH ₃ gas and H ₂ gas.

3. A photoresist pattern for thin film transistor isolation is manufactured by a litho process,
Using this as a mask, the hydrogenated amorphous silicon nitride layer, the hydrogenated amorphous silicon layer, and the N ⁺ -type hydrogenated microcrystalline silicon layer were partially removed by dry etching, and the photoresist was peeled off and washed, followed by isolation. .

4. After that, a photoresist pattern is formed in a desired shape, the N ⁺ -type hydrogenated microcrystalline silicon layer 905 in the channel portion of the thin film transistor is etched using this as a mask, and the photoresist is peeled off and washed to form a channel. .

5. Next, on this, SiH ₄ gas, NH ₃
A hydrogenated amorphous silicon nitride layer 906 was formed by plasma CVD using gas and H ₂ gas. In this embodiment, the hydrogenated amorphous silicon nitride layer 906 has a function as an insulating layer of the photoelectric conversion element and a function of an interlayer insulating layer between the thin film transistor and the photoelectric conversion element.

Next, a hydrogenated amorphous silicon layer 907 was formed by plasma CVD using SiH ₄ gas and H ₂ gas. Further, an N ⁺ -type hydrogenated microcrystalline silicon layer 908 was formed by plasma CVD using SiH ₄ gas, PH ₃ gas and H ₂ gas.

In this embodiment, the N ⁺ -type hydrogenated microcrystalline silicon layer 908 serves as an ohmic layer, an electrode layer and a window layer.

6. A photoresist pattern for sensor isolation is formed by a photolithography process, and using this as a mask, a hydrogenated amorphous silicon nitride layer, a hydrogenated amorphous silicon layer, and an N ⁺ -type hydrogenated microcrystalline silicon layer are formed as one layer. After removing the portion and washing and removing the photoresist, isolation was performed.

7. A hydrogenated amorphous silicon nitride layer 909: 5000Å as an interlayer insulating layer was formed by plasma CVD using SiH ₄ gas, NH ₃ gas, and H ₂ gas.

8. A photoresist pattern for a contact hole is formed by a photolithography process, and a hydrogenated amorphous silicon nitride layer 90 of an interlayer insulating layer is formed by dry etching.
A part of 9 was removed, and after removing and washing the photoresist, a contact hole was formed.

9. Aluminum (A
1) was formed into a film having a thickness of 1 μm.

10. After that, on this aluminum (Al),
A photoresist pattern was formed into a desired shape, etching was performed using this as a mask, and after photoresist removal and cleaning, a common wiring 910 and a signal line 911 of the sensor were formed.

11. Finally, a protective layer (not shown) was provided.

In this embodiment, the MIS sensor is laminated on the substrate on which the thin film transistor is manufactured. At this time, the N ⁺ type microcrystalline silicon layer 905 of the thin film transistor also constitutes the lower electrode of the MIS type sensor. The formation and patterning of the metal layer may be performed twice.

In this embodiment, a MIS type sensor S11 is laminated as a sensor on the thin film transistor T11. In addition, the electrode of the thin film transistor was replaced with the N ⁺ -type hydrogenated microcrystalline silicon layer 905, and the N ⁺ -type microcrystalline silicon layer 905 also had the function of the lower electrode layer of the sensor. By adopting this structure, it was necessary to prepare three metal layers as electrodes in the related art, but it was possible to reduce the number to two, and since it was a laminated type, the thin film transistor and the sensor could be optimally designed. It was possible to improve the characteristics.

With these structures, it is possible to secure an aperture ratio of 70% or more, which was conventionally 50% or less, and as a result, the sensitivity is 1.4 times or more. Also in this embodiment, it is considered that the carriers generated by the light absorbed by the semiconductor layer 907 extending on the thin film transistor are sufficiently used as the optical carriers of the sensor. Since the sensitivity is improved, when this photoelectric conversion device is used for a medical X-ray detection device, it becomes possible to obtain a high-quality image with a smaller X-ray dose. Further, the incident light is completely absorbed by the semiconductor layer 907, so that the thin film transistor is substantially completely shielded from light, and an increase in leak current of the thin film transistor due to light incidence is eliminated. As a result, it was possible to reduce crosstalk and obtain a high quality image.

Further, the structure and manufacturing method of the present embodiment made it possible to manufacture a higher quality photoelectric conversion device while suppressing an increase in manufacturing cost.

[0070] In the present embodiment taking the configuration that also serves as a N ⁺ -type hydrogenated microcrystalline silicon layer 905 by a sensor and a thin film transistor, the structure of a thin film transistor as a structure using a hole rather than electronic, P ⁺ -type hydrogenated microcrystalline Alternatively, the crystallized silicon may be shared with the sensor. Further, as long as sufficient characteristics can be obtained, it is not limited to using these hydrogenated microcrystalline silicon.

[0071]

As described above, according to the present invention, in order to maximize the utilization of light, the MIS type sensor is thinned and laminated on the transistor, and the area of one pixel is used as a window. The rate can be improved. Further, the thin film transistor can be manufactured by the same process by using the semiconductor layer of the MIS type sensor as a light shielding material, and can be effectively realized at low cost. Further, the common semiconductor layer is applied to the electrodes of the MIS type sensor and the thin film transistor, and the process is simplified, so that it can be manufactured at low cost.

[Brief description of drawings]

FIG. 1 is a plan view and a cross-sectional view showing a first embodiment of a photoelectric conversion device of the present invention.

FIG. 2 is an equivalent circuit diagram of one pixel according to the first embodiment.

FIG. 3 is a diagram illustrating an operation of the MIS type sensor according to the first embodiment.

FIG. 4 is a circuit diagram showing an entire circuit of the photoelectric conversion device according to the first embodiment.

FIG. 5 is a plan view and a sectional view showing a second embodiment of the present invention.

6A and 6B are a plan view and a cross-sectional view showing a conventional photoelectric conversion device.

FIG. 7 is a plan view and a cross-sectional view showing another conventional photoelectric conversion device.

[Explanation of symbols]

501, 901 Glass substrate 502, 902 Gate electrode 503, 903 Gate insulating film 504, 507, 904, 907 Semiconductor layer 505, 509, 905, 908 N ⁺ type layer 506, 510, 909 Interlayer insulating layer 508, 906 Insulating layer 511 , 910 common wiring 512, 911, SIG signal line Cgs, Cgd wiring capacitance S, S11 photoelectric conversion element T, T11 thin film transistor gn, g, g1 gate line

Continued front page    F-term (reference) 4M118 AA01 AA10 AB01 BA04 BA05                       CA07 CA11 CB06 CB14 DD02                       DD09 DD12 FB03 FB09 FB13                       FB16 GA10 HA21 HA22 HA26                 5C024 AX11 CX41 GX07 GY31                 5F049 MA15 MB04 MB05 NA01 NA18                       NA20 NB10 PA05 PA07 PA14                       QA09 RA04 RA08 SS01 UA01                       UA20 WA07                 5F110 AA30 BB10 BB11 CC07 DD02                       DD14 EE04 EE44 FF03 FF30                       GG02 GG15 GG45 HK09 HK16                       HK35 HL03 HM12 HM20 NN02                       NN04 NN24 NN35 NN71 QQ21                       QQ23

Claims (8)

[Claims] 1. A two-dimensional photoelectric conversion device formed by combining a MIS type sensor and a thin film transistor on a substrate, wherein the MIS type sensor is laminated on the thin film transistor, and a semiconductor of the MIS type sensor. A photoelectric conversion device, wherein a layer extends on the thin film transistor. 2. The MIS on the thin film transistor
The photoelectric conversion device according to claim 1, wherein the first electrode, the semiconductor layer, the insulating layer, and the second electrode of the type sensor are stacked in this order. 3. The MIS on the thin film transistor
The photoelectric conversion device according to claim 1, wherein the second electrode, the insulating layer, the semiconductor layer, and the first electrode of the type sensor are stacked in this order. 4. The insulating layer is a layer that blocks passage of carriers of a first conductivity type and carriers of a second conductivity type different from the first conductivity type, and the semiconductor layer is a layer for photoelectric conversion, Further, the MIS type sensor has an injection blocking layer that blocks the injection of the first conductivity type carriers into the semiconductor layer, and the thin film transistor is of the first conductivity type in the refresh operation of the MIS type sensor. An electric field is applied in the direction of guiding the carriers from the semiconductor layer to the first electrode, and in the photoelectric conversion operation, the carriers of the first conductivity type generated by the light incident on the semiconductor layer are retained in the semiconductor layer, An electric field is applied in a direction in which the second conductive type carrier is guided to the first electrode, and the first conductive type carrier or the first electrode accumulated in the semiconductor layer by the photoelectric conversion operation is applied to the first conductive type carrier or the first electrode. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device is controlled so as to detect the guided second conductivity type carrier as an optical signal. 5. The first electrode or the second electrode,
3. The electrode of the thin film transistor is composed of the same member manufactured in the same step.
The photoelectric conversion device according to any one of items 1 to 4. 6. The photoelectric conversion device according to claim 4, wherein the first electrode and the injection blocking layer are formed of the same layer. 7. The insulating layer has a function as an insulating layer of the MIS type sensor and a function as an interlayer insulating layer of the thin film transistor and the MIS type sensor. Photoelectric conversion device. 8. An X-ray detection device having the photoelectric conversion device according to claim 1.