JP2003156830A - Phase shift mask, method for producing the same and pattern forming method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a phase shift mask easy to produce and capable of forming a high-precision pattern. SOLUTION: The phase shift mask consists of a light transmissive substrate, a translucent film pattern formed on the surface of the light transmissive substrate and an organic film pattern formed on the surface of the light transmissive substrate or on the translucent pattern in such a way that the transmittance can be varied by irradiation with light. When a false pattern is generated in pattern formation, since the transmittance of the organic film pattern can easily be varied by irradiation with light, fine adjustment of the quantity of phase shift can easily be performed by varying the transmittance without varying the film thickness.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase shift mask, a method for manufacturing the same, and a pattern forming method using the same, and more particularly to adjustment of transmittance of a semi-permeable film pattern.

[0002]

2. Description of the Related Art With the miniaturization and high integration of semiconductor devices,
The demand for higher precision in photolithography is ever increasing. Under such circumstances, shortening of wavelength from g-line to i-line has been studied as an exposure light source. However, in the usual photolithography method, shortening the exposure wavelength improves resolution, but on the other hand, it causes a decrease in depth of focus. This not only increases the burden on the design of the exposure optical system, but also significantly deteriorates the process stability, and thus adversely affects the yield of products.

The phase shift method is drawing attention as one of the effective pattern transfer methods that can meet such demands. In the phase shift method, a phase shift mask is used as a mask for transferring a fine pattern.

The phase shift mask is composed of, for example, a phase shifter portion forming a pattern portion on the mask and a non-pattern portion (substrate exposed portion) where the phase shifter does not exist.
By shifting the phase of light passing through both of them by about 180 degrees, the light is mutually interfered at the pattern boundary portion, and the contrast of the transferred image is improved by this mutual interference effect.

Further, by using the phase shift method,
It is possible to increase the depth of focus, improving the resolution while using light of the same wavelength and improving the applicability of the process, compared to the transfer process using a normal mask with a general light-shielding pattern made of a chromium film or the like. It makes it possible to improve expansion at the same time.

The phase shift mask can be roughly classified into a complete transmission type phase shift mask and a halftone type phase shift mask depending on the light transmission characteristics of the phase shifter section.
The complete transmission type phase shift mask is a mask in which the light transmittance of the phase shifter part is equivalent to that of the exposed part of the substrate which is a non-patterned region, and it is a mask almost transparent to the exposure wavelength. It is said to be effective for transcription.

On the other hand, in the halftone type phase shift mask, the light transmittance of the phase shifter portion is about several percent to several tens percent of the substrate area which is the non-patterned area, and the contact hole in the semiconductor manufacturing process It is said to be effective for forming isolated patterns such as formation.

For example, FIG. 5 shows a sectional view of a general halftone type phase shift mask. As shown in FIGS. 5A and 5B, a general halftone type phase shift mask has a translucent substrate 1 on which a semitransparent film pattern 2 such as MoSiO is formed. It comprises a phase shifter portion 3 to be formed and a non-patterned portion (substrate exposed portion) 4 in which the phase shifter does not exist. Here, the phase shifter portion 3 shifts the phase of the transmitted exposure light at its edge portion to exert the function as a phase shifter portion, and also shields the exposure light from the resist on the transferred substrate. It has a function. Here, the shift amount (optical path difference) θ of the phase shifter is represented by θ = 2πt (n−1) / λ λ: wavelength of exposure light t: thickness of phase shifter n: refractive index.

[0009]

The shift amount of the phase shifter needs to be controlled with high accuracy, and even a slight shift cannot serve as the phase shifter. Therefore, it is necessary to control the film quality that changes the refractive index n and the film thickness t with high accuracy.

When pattern exposure is performed using the halftone type phase shift mask described above, not only the transfer pattern 8 corresponding to the non-patterned portion 4 but also the pattern as shown in FIG. Since the pseudo pattern 5 is formed at the center of the edge, there is a problem that it is not possible to perform highly accurate pattern exposure.

Therefore, it is necessary to control the pattern with high accuracy, but fine adjustment is extremely difficult. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a phase shift mask that is easy to manufacture and that enables highly accurate pattern formation.

[0012]

A phase shift mask of the present invention is a translucent substrate, a semitransparent film pattern formed on the translucent substrate surface, the translucent substrate surface or the translucent pattern. It is characterized in that it is composed of an organic film pattern which is formed on the organic film so as to change the transmittance by energy irradiation.

According to this structure, the transmittance can be easily changed by irradiating energy such as light. Therefore, by changing the transmittance without changing the film thickness, the phase shift amount can be easily reduced. It becomes possible to make adjustments. Therefore, there is no formation of a pseudo pattern due to the optical proximity effect,
It is possible to obtain a highly accurate and highly reliable mask.

Preferably, the organic film pattern is constructed so that its transmittance can be changed by photoselective oxidation. According to such a configuration, the transmittance is changed by being selectively oxidized to change the transmittance, so that the transmittance can be finely adjusted easily and efficiently.

Preferably, the organic film pattern is
It is characterized by being composed of an organic polymer configured to cause bleaching of optical absorption by causing a shortening of an effective π conjugation length and a reduction of a molecular weight by photoselective oxidation. According to this configuration, the organic film pattern is composed of an organic polymer configured to cause bleaching of optical absorption by causing a shortening of the effective π conjugation length and a reduction in the molecular weight by photoselective oxidation. Therefore, the transmittance can be adjusted satisfactorily and highly accurately by adjusting the light amount.

The organic film pattern is poly (2-methoxy-5-dodecyloxy-p-phenylene vinylene).
(Poly (2-methoky-5-dodecyloxy-p-phenylene v
inylene)) (MDOPPV). According to such a configuration, the MDOPPV organic film pattern causes a shortening of the effective π conjugation length and a reduction in the molecular weight by photoselective oxidation, and bleaching of optical absorption occurs. It becomes possible to adjust the transmittance with high accuracy.

Preferably, the organic film pattern is a diarylethene compound represented by the general formula (1) or a polymer containing the same.

[Chemical 3] However, in the formula (1), n represents an integer of 2 to 5, and A represents the general formula (2).

[Chemical 4] However, in the formula (2), R ₁ represents an alkyl group, and R ₂ represents a substituent selected from an alkyl group or a cyano group.

According to this structure, the diarylethene compound is reversibly changed in color upon irradiation with light, and the optical constants such as transmittance are changed. Here, focusing on the photochromic reactivity of diarylethene compounds, that is, the characteristic that a single chemical species reversibly produces two isomers having different absorption spectra by changing the chemical bond without changing the molecular weight,
By irradiation with energy such as light irradiation, a colored body having absorption from a colorless body to a specific region in the visible region is obtained. With this, since the optical constant can be easily changed by light irradiation, the transmittance can be changed without changing the film thickness, and the fine adjustment of the phase shift amount can be easily performed. Become.

Further, preferably, the organic film pattern is
It is characterized by being a diarylethene compound represented by the general formula (1) or a polymer containing the same.

[Chemical 5] However, in the formula (1), n represents an integer of 2 to 5, and A represents the general formula (3).

[Chemical 6]

However, in the formula (3), R ₄ is an alkyl group, R ₅
Is a saturated hydrocarbon group, R ₆ is a hydrogen atom, an alkyl group or a cyano group, and R ₇ is an alkyl group, a cyano group or a phenyl group of the general formula (4).

[Chemical 7]

Preferably, the organic film pattern is
It is characterized by being a fluorinated polyimide. The refractive index of fluorinated polyimide (F-PI) can be precisely controlled by irradiation with an electron beam. Therefore, since the refractive index can be easily changed by irradiating the electron beam, it is possible to easily perform the fine adjustment of the phase shift amount without changing the film thickness.

In the pattern forming method of the present invention, a translucent substrate, a semitransparent film pattern formed on the translucent substrate surface, and the energy formed on the translucent substrate surface or the semitransparent pattern. A step of preparing a phase shift mask provided with an organic film pattern formed so that the transmittance can be changed by irradiation, and a detection step of creating an exposure pattern by the phase shift mask and detecting a pseudo pattern occurrence point, A calculation step of calculating a correction value of the transmittance of the organic film pattern so as to remove the pseudo pattern based on the detection result obtained in the detection step, and the phase corresponding to the calculation result. A mask adjusting step of irradiating the organic film pattern of the shift mask with energy to adjust the transmittance so as to obtain a target correction value; Characterized in that it comprises an exposure step of performing pattern exposure using a phase shift mask comprising a regulated organic film pattern over rate.

According to such a configuration, the generation of the pseudo pattern is detected in advance, the calculation is performed so as to achieve the pattern correction capable of eliminating the generation of the pseudo pattern, and the transmittance is calculated based on the calculation result. When adjusting the, the transmittance of the pattern is adjusted by irradiating the organic film pattern of the phase shift mask with energy such as an electron beam, so it is possible to easily and efficiently suppress the generation of pseudo patterns, and to achieve high accuracy and reliability. It is possible to form a pattern with high property.

Preferably, the mask adjusting step is a step of adjusting the transmittance by selectively irradiating a part of the organic film pattern to a predetermined depth with an electron beam. According to this structure, a part of the film thickness of the organic film pattern is modified by electron beam exposure, whereby the transmittance can be easily fine-tuned.

Preferably, the mask adjusting step is a step of irradiating an electron beam in an oxygen atmosphere. According to such a configuration, photo-oxidation can be easily performed by irradiating with an electron beam in an oxygen atmosphere, and it is possible to efficiently and highly accurately form a pattern.

Preferably, the organic film pattern is poly (2-methoxy-5-dodecyloxy-p-phenylene vinylene) (poly (2-methoky-5-dodecyloxy-p-phen).
ylene vinylene)) (MDOPPV). According to this structure, the organic film pattern made of MDOPPV is irradiated with an electron beam in an oxygen atmosphere,
Since it is easily photo-oxidized, it becomes possible to efficiently and accurately form a pattern.

The method of manufacturing a phase shift mask of the present invention comprises a transparent substrate and an organic film pattern formed on the surface of the transparent substrate so as to change the transmittance by light irradiation. And a step of preparing a phase shift mask, so that the organic film pattern of the phase shift mask is irradiated with an electron beam so that the exposure pattern by the phase shift mask becomes a desired pattern, so that the desired transmittance is obtained. And a mask adjusting step for finely adjusting the transmittance. With this configuration, it is possible to easily finely adjust the transmittance after forming the pattern, and it is possible to provide a highly accurate phase shift mask.

Preferably, the mask adjusting step is a step of adjusting the transmittance by selectively irradiating a part of the organic film pattern with an electron beam to a predetermined depth. According to this structure, a part of the film thickness of the organic film pattern is modified by electron beam exposure, whereby the transmittance can be easily fine-tuned.

Preferably, the mask adjusting step is a step of irradiating an electron beam in an oxygen atmosphere. According to this structure, it becomes possible to efficiently adjust the transmittance by the selective photooxidation.

Preferably, the organic film pattern is poly (2-methoxy-5-dodecyloxy-p-phenylene vinylene) (poly (2-methoky-5-dodecyloxy-p-pheny
lenevinylene)) (MDOPPV). According to this structure, the organic film pattern made of MDOPPV is irradiated with an electron beam in an oxygen atmosphere,
Since it is easily photo-oxidized, it becomes possible to obtain a phase shift mask capable of efficiently forming a highly accurate pattern.

As described above, according to the present invention, it is possible to perform pattern formation with high accuracy and good pattern cutting (clear contour). Needless to say, the organic film pattern used here is not limited to MDOPPV and can be applied to other organic films.

[0032]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings. Embodiment 1 As shown in FIGS. 1A and 1B, a halftone phase shift mask according to the first embodiment of the present invention comprises a translucent substrate 1 and a semitransparent film pattern 2 such as MoSiO. It is characterized in that the organic film pattern 6 made of MDOPPV having a variable transmittance is formed in a region corresponding to the pattern of the semitransparent film pattern. Figure 1
(B) is a figure which shows the AA cross section of Fig.1 (a).

In this example, pattern data is input in advance as CAD data, simulation is performed based on this pattern data, the generation position and size of the pseudo pattern are detected, and the pseudo pattern is generated based on the detection result. In order to suppress this, an auxiliary pattern composed of the organic film pattern 6 is provided, and the transmittance of this auxiliary pattern is adjusted by electron beam exposure. Here, it is composed of a phase shifter portion 3 forming a pattern portion on the mask and a non-pattern portion (substrate exposed portion) 4 in which the phase shifter does not exist. The organic film pattern 6 is an auxiliary pattern and constitutes a part of the phase shifter unit 3.

FIG. 2 shows a pattern 8 transferred onto a resist formed on a semiconductor substrate 7 using this halftone type phase shift mask. According to such a configuration, since the auxiliary pattern made of the organic film pattern 6 is provided so as to suppress the generation of the pseudo pattern, the pseudo pattern does not occur as shown in FIG. It is possible to obtain a high transfer pattern.

Embodiment 2 Next, a method of forming a halftone type phase shift mask of the present invention and a pattern forming method using the same will be described. FIG. 3 is a flow chart showing a method of forming a halftone type phase shift mask of the present invention and a pattern forming method using the same.

First, a phase shift mask having a desired pattern is prepared (step 101). Here, M is formed on the surface of the transparent substrate 1 made of quartz by a sputtering method.
An oSiO film is formed and patterned by photolithography to form a semitransparent film pattern 2 as shown in FIG.

A simulation is performed using this semi-transparent film pattern 2, a transfer pattern is formed, and a pseudo pattern generation portion is detected (step 102). Then, based on the detection result obtained in this detection step, a correction value of the transmittance of the organic film pattern is calculated so as to remove the pseudo pattern (step 103).

Thereafter, the translucent substrate 1 is treated with ethanol,
After ultrasonic cleaning in acetone and chloroform successively and drying with compressed air, the transparent substrate 1 was coated with
An MDOPPV thin film (film thickness 200 nm) is formed by spin coating using a 5 mg / ml chloroform solution (step 104). At this time, the rotation speed was 2000 rpm. Then, this is patterned by photolithography,
As shown in FIG. 4B, the organic film pattern 6 corresponding to the calculation result is formed (step 105).

After that, an exposure pattern is formed by the phase shift mask, and a pseudo pattern generation portion is detected (step 106). Then, based on the detection result obtained in this detection step, a correction value of the transmittance of the organic film pattern is calculated so as to remove the pseudo pattern, and as shown in FIG. Corresponding to electron beam irradiation E
Step B is performed to adjust the transmittance of the organic film pattern 6 made of the MDOPPV thin film.

In this way, a halftone type phase shift mask capable of obtaining a transfer pattern with extremely high precision is completed. According to such a configuration, the occurrence of the pseudo pattern is detected in advance, the operation is performed so as to achieve the pattern correction capable of eliminating the occurrence of the pseudo pattern, and the phase shift mask of the phase shift mask is calculated based on the operation result. Since the transmittance of the pattern is adjusted by irradiating the organic film pattern with the electron beam, it is possible to easily and efficiently suppress the generation of the pseudo pattern and perform highly accurate and reliable pattern formation. .

Further, by adjusting the energy of the electron beam, highly accurate adjustment can be performed very easily, and a highly reliable halftone type phase shift mask can be obtained.

In addition, after the transfer pattern is formed, the transfer pattern is detected, and if a pseudo pattern is generated,
Fine adjustment can be performed by irradiating the electron beam again, and a highly accurate phase shift mask can be formed. Further, as the organic film material forming the auxiliary pattern,
The present invention is applicable without being limited to the above embodiment,
In addition to the above MDOPPV, poly (p-phenylene vinylene) (P
oly (p-phenylene vinylene: PPV) and its derivatives (poly
(2-Methoxy-5-dodecyloxy-p-phenylene vinylene) (Poly (2-methoxy-5- (2'-ethylhexyloxy) -p-ph
enylene vinylene)), poly (2,5-dioctyloxy-p-phenylene vinylene) (Poly (2,5-dioctyloxy-p-
phenylene vinylene)), poly (2,5-dinonyloxy-
p-phenylene vinylene) (Poly (2,5-dinonyloxy-p-ph
enylene vinylene)), poly (2,5-didecyloxy-
p-phenylene vinylene) (Poly (2,5-didecyloxy-p-ph
enylene vinylene))) and polythiophene (Pol
ythiophene) and its derivatives (Poly (3-hexylthiophene) (Poly (3-hexylthiophene)), Poly (3-heptylthiophene)), Poly (3-octylthiophene) (Poly (3-ocylthiophene))
e)), poly (3-nonylthiophene) (Poly (3-nonylth
iophene)), poly (3-decylthiophene) (Poly (3-
decylthiophene)), poly (3-undecylthiophene) (Poly (3-undecylthiophene)), poly (3-dodecylthiophene) (Poly (3-dodecylthiophene)), poly [3- (p-dodecylphenyl) thiophene] ( Poly [3
-(p-dodecylphenyl) thiophene)]), etc.), polyfluorene and its derivatives (Poly (9,9-dihexylfluorene)) (Poly (9,9-dihexylfluorene)),
Poly (9,9-diheptylfluorene) (Poly (9,9-di
heptylfluorene)), poly (9,9-dioctylfluorene), poly (9,9-dioctylfluorene)
-Didecylfluorene) (Poly (9,9-didecylfluoren
e)), poly [9,9-bis (p-hexylphenyl)
Fluorene] (Poly [9,9-bis (p-hexylphenyl) fluoren
e]), poly [9,9-bis (p-heptylphenyl)]
Fluorene] (Poly [9,9-bis (p-heptylphenyl) fluoren
e]), poly [9,9-bis (p-octylphenyl))
Fluorene] (Poly [9,9-bis (p-octylphenyl) fluoren
e])), polyacetylene derivatives (Poly (1,2-diphenylacetylene)) (Poly (1,2-diphe
nylacetylene)), poly [1-phenyl-2- (p-butylphenyl) acetylene] (Poly [1-phenyl-2- (p-bu
tylphenyl) acetylene]), poly (1-phenyl-2-methylacetylene) (Poly (1-methyl-2-phenylacetylen
e)), poly (1-phenyl-2-ethylacetylene)
(Poly (1-ethyl-2-phenylacetylene)), Poly (1-phenyl-2-hexylacetylene) (Poly (1-hexyl-2-p
henylacetylene)), poly (phenylacetylene) (Pol
y (phenylacetylene)) and other polypyridines (Polypyridin
e), Poly (pyridyl vinylen)
e), Polyphenylene, Polyfurane, Polyseleno
phene), poly (phenylene-co-thienylene) (Po
ly (phenylene-co-thienylene)), poly [1,4-bis (2-thienyl) phenylene] (Poly [1,4-bis (2-thien
yl) phenylene]), poly (phenylene ethynylene) (Pol
Of course, so-called conjugated polymers, such as y (phenyleneethynylene)) and their derivatives, whose main chain has a repeating repeating structure of saturated (single) bond and unsaturated (double or triple) bond of carbons , Tris (8-hydroxyquinoline) aluminum
aluminum) (Alq), Coumarin6, 3- (2-Ben
zothiazolyl) -7- (diethylamino) coumarin), coumarin 7
(Coumarin7, 3- (2-Benzoimidazolyl) -7- (diethylamin
o) coumarin)), 4- (dicyanomethylene) -2-methyl-6- (4-dimethylaminostyryl) -4H-pyran (4- (Dicyanomethylene) -2-methyl-6- (4-dimethylami
nostyryl) -4H-pyran) (DCM), Nile Red (Nile Re
d), 1,1,4,4-tetraphenyl-1,3-butadiene (1,1,4,4-Tetraphenyl-1,3-butadiene), N,
N'-Dimethylquinacrydone (N, N-Dimethylquinacryd
one) (DMQA), 1,2,3,4,5-pentaphenylcyclopentadiene (1,2,3,4,5-Pentaphenylcyclopent
adiene) (PPCP), N.A. N'-diphenyl-N, N'-
Bis (3-methylphenyl) -1,1'-biphenyl-4,4'-diamine (N, N'-Diphenyl-N, N'-bis (3-meth
ylphenyl) -1,1'-biphenyl-4,4'-diamine) (TPD), 2
-4- (biphenyl-5- (4-tert-butylphenyl) -1,3,4-oxydiazole (2- (4-Bipheny
l) -5- (4-tert-butylphenyl) -1,3,4-oxidiazole) (PB
D), p-terphenyl, p-quaterphenyl, 2,2'-bithiophene, 2,2 ': 5,5'-terthiophene (2,2 ': 5', 2 ''-Terthiophene), α-hexathiophene (a-Hexathiophene), anthracene (anth
racene, tetracene, phthalocyanine, porphyrin, and other fluorescent dyes, polymers containing these fluorescent dyes in their molecular structures, and the above polymers and fluorescent dyes as poly (N-vinylcarbazole). ) (Poly (N-vinylcarbazole)) (PV
K), Poly (methylmethacrylate)
acrylate)) (PMMA), polycarbonate (Polycarbonat
e), polystyrene, poly (methylphenylsilane), poly (diphenylsilane), and other materials dispersed in insulating polymers, photoresist, etc. Any organic material that can be oxidized or a material whose transmittance changes by light irradiation can be applied.

MoSiO is also used as a semitransparent film pattern.
The present invention is not limited to the above, but can be applied to MoSiN and the like. Further, although the halftone type phase shift mask has been described, in the present invention, a phase shift mask in which a light shielding film pattern and a semitransparent film pattern are mixed or a semitransparent film pattern is formed on the light shielding film pattern. It is applicable to all phase shift masks such as structures.

Embodiment 3 Furthermore, a third embodiment of the present invention is characterized in that a diarylethene compound is used as an organic film pattern constituting a phase shifter. Here, 1,2-bis (1,3,5-trimethyl-2phenyl) hexafluorocyclopentene (compound represented by formula (9)) is used as the diarylethene compound having a phenyl group as an aryl group in the diarylethene compound. It is used for the organic film pattern 6 shown in the third embodiment.

[Chemical 8] Although this film is colorless, it can be transformed into the formula (10) by UV irradiation.
The ring is closed and colored red.

By adjusting this ultraviolet irradiation energy, the refractive index can be adjusted and an organic film pattern having a desired refractive index can be obtained. in this way,
The diarylethene compound reversibly changes color upon irradiation with light and changes optical constants such as transmittance. Therefore, since the optical constant can be easily changed by light irradiation, the transmittance can be changed without changing the film thickness,
It is possible to easily perform fine adjustment of the phase shift amount.

Although the diarylethene compound is used in the above embodiment, a polymer obtained by diffusing the diarylethene compound may be used.

Embodiment 4 Further, as a fourth embodiment of the present invention, an example in which the organic film pattern forming the phase shifter is formed of another diarylethene compound will be described. Here, in the diarylethene compound, as the diarylethene compound having a pyrrole ring as an aryl group, 1,2-bis (2-cyano-1,5-dimethyl-pyrrol-4-yl) hexafluorocyclopentene (formula (13) The compound shown in 1) is used for the organic film pattern 6 shown in the third embodiment.

[Chemical 9] Although this film is colorless, it can be transformed into the formula (10) by UV irradiation.
It is closed and colored blue. By adjusting this ultraviolet irradiation energy, the refractive index can be adjusted and an organic film pattern having a desired refractive index can be obtained.

Fifth Embodiment Further, as a fifth embodiment of the present invention, an example in which the organic film pattern forming the phase shifter is formed of another diarylethene compound will be described. Here, 3-
Bromo-1,2-dimethyl-5-phenylpyrrole is reacted with perfluorocyclopentene, and the diarylethene compound represented by the formula (15) is used for the organic film pattern 6 shown in the third embodiment.

[Chemical 10]

Although this film is colorless, it is closed by irradiation of ultraviolet rays as shown in the formula (16) and colored blue. By adjusting this ultraviolet irradiation energy, the refractive index can be adjusted and an organic film pattern having a desired refractive index can be obtained.

Embodiment 6 Furthermore, as a sixth embodiment of the present invention, an example in which the organic film pattern forming the phase shifter is formed of another diarylethene compound will be described. Here, 3-
Bromo-2-isopropyl-1-methyl-5-phenylpyrrole is reacted with perfluorocyclopentene, and the diarylethene compound represented by the formula (17) is used for the organic film pattern 6 shown in the third embodiment.

[Chemical 11]

Although this film is colorless, it is closed by irradiation of ultraviolet rays as shown in formula (16) and colored blue. By adjusting this ultraviolet irradiation energy, the refractive index can be adjusted and an organic film pattern having a desired refractive index can be obtained.

Embodiment 7 Furthermore, as a seventh embodiment of the present invention, fluorinated polyimide is used as the organic film pattern 6 constituting the phase shifter in the organic film pattern 6 shown in the third embodiment. The refractive index of fluorinated polyimide (F-PI) can be precisely controlled by irradiation with an electron beam. Therefore,
Since the refractive index can be easily changed by irradiating the electron beam, it is possible to easily perform the fine adjustment of the phase shift amount without changing the film thickness.

[0053]

As described above, according to the phase shift mask of the present invention, the phase shift mask has the organic film pattern formed so that the transmittance can be changed by light irradiation.
Since the transmittance can be easily changed by energy irradiation such as light irradiation, the shift amount can be easily finely adjusted by changing the transmittance without changing the film thickness. Therefore, it is possible to obtain a highly accurate and highly reliable mask without forming a pseudo pattern due to the optical proximity effect.

Further, the transfer image formed by the phase shift mask is monitored, and the correction value of the optical constant is calculated in order to finely adjust the shift amount so as to prevent the inconvenience such as the generation of the pseudo pattern. By performing the correction based on the calculated value, it becomes possible to provide a phase shift mask capable of forming a highly accurate pattern very easily.

[Brief description of drawings]

FIG. 1 is a diagram showing a halftone phase shift mask according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a pattern formed by the halftone phase shift mask.

FIG. 3 is a flowchart showing a method for manufacturing a halftone type phase shift mask according to a second embodiment of the present invention and a pattern forming method using the same.

FIG. 4 is an explanatory diagram showing the method.

FIG. 5 is a diagram showing a conventional halftone phase shift mask.

FIG. 6 is a diagram showing a pattern formed using a halftone type phase shift mask of a conventional example.

[Explanation of symbols]

1 Translucent substrate 2 translucent pattern 3 Substrate exposure section 4 pattern parts 5 pseudo patterns 6 Auxiliary pattern (organic film pattern) 7 Resist 8 transfer patterns

Claims (14)

[Claims] 1. A translucent substrate, a translucent film pattern formed on the translucent substrate surface, and a translucent film pattern formed on the translucent substrate surface or the translucent pattern, the transmissivity being changed by energy irradiation. A phase shift mask comprising an organic film pattern formed as much as possible. 2. The phase shift mask according to claim 1, wherein the organic film pattern is configured so that the transmittance can be changed by photoselective oxidation. 3. The organic film pattern is composed of an organic polymer configured to cause bleaching of optical absorption by causing a shortening of an effective π conjugation length and a reduction of a molecular weight by photoselective oxidation. The phase shift mask according to claim 2, which is characterized in that. 4. The organic film pattern comprises poly (2-methoxy-5-dodecyloxy-p-phenylene vinylene) (poly
(2-methoky-5-dodecyloxy-p-phenylene vinylen
e)) (MDOPPV), The phase shift mask in any one of Claim 1 thru | or 3 characterized by the above-mentioned. 5. The phase shift mask according to claim 1, wherein the organic film pattern is a diarylethene compound represented by the general formula (1) or a polymer containing the same. [Chemical 1] However, in the formula (1), n represents an integer of 2 to 5, and A represents the general formula (2). [Chemical 2] However, in the formula (2), R ₁ represents an alkyl group, and R ₂ represents a substituent selected from an alkyl group or a cyano group. 6. The phase shift mask according to claim 1, wherein the organic film pattern is fluorinated polyimide. 7. A translucent substrate, a translucent film pattern formed on the translucent substrate surface, and a translucent layer formed on the translucent substrate surface or the translucent pattern, the transmissivity being changed by energy irradiation. A step of preparing a phase shift mask provided with an organic film pattern formed as possible, a detection step of forming an exposure pattern by the phase shift mask, and detecting a pseudo pattern occurrence point, and obtained in the detection step Based on the obtained detection result, a calculation step of calculating a correction value of the transmittance of the organic film pattern so as to remove the pseudo pattern, and the organic film of the phase shift mask corresponding to the calculation result. A mask adjustment step of irradiating a pattern with desired energy and adjusting the transmittance so as to obtain a target correction value, and an organic material whose transmittance is adjusted in the mask adjustment step. An exposure step of performing pattern exposure using a phase shift mask having a film pattern. 8. The mask adjusting step is a step of adjusting the transmittance by selectively irradiating a part of the organic film pattern with an electron beam to a predetermined depth. The described pattern forming method. 9. The pattern forming method according to claim 7, wherein the mask adjusting step is a step of irradiating an electron beam in an oxygen atmosphere. 10. The organic film pattern comprises poly (2-methoxy-5-dodecyloxy-p-phenylene vinylene) (pol
y (2-methoky-5-dodecyloxy-p-phenylenevinylen
e)) (MDOPPV), The pattern formation method in any one of Claim 7 thru | or 9 characterized by the above-mentioned. 11. A step of preparing a phase shift mask comprising a translucent substrate and an organic film pattern formed on the translucent substrate surface so that the transmittance can be changed by light irradiation. A mask adjusting step of irradiating the organic film pattern of the phase shift mask with an electron beam so that the exposure pattern by the phase shift mask becomes a desired pattern, and finely adjusting the transmittance so as to obtain a target transmittance. A method of manufacturing a phase shift mask, comprising: 12. The mask adjusting step is a step of adjusting the transmittance by selectively irradiating a part of the organic film pattern with an electron beam to a predetermined depth. A method for manufacturing the described phase shift mask. 13. The method of manufacturing a phase shift mask according to claim 11, wherein the mask adjusting step is a step of irradiating an electron beam in an oxygen atmosphere. 14. The organic film pattern comprises poly (2-methoxy-5-dodecyloxy-p-phenylene vinylene) (pol
y (2-methoky-5-dodecyloxy-p-phenylenevinylen
e)) (MDOPPV).
14. The method for manufacturing a phase shift mask according to any one of 13 to 13.