JP2003152321A - Metal joint - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a metal joint which is superior in resistance to impact resistance. SOLUTION: An electronic module is composed of a printed wiring board 4 and an electronic part 1, and an electrode (connection terminal) 3 of the printed wiring board 4 and an electrode (connection terminal) 7 of the electronic part 1 are connected by a metal joint. The metal joint has a solder layer 8 and an Ni-based layer 6 (containing a P-rich layer 10), and the Ni-based layer 6 contains 4 to 10 wt.% P and 0.1 to 5.0 wt.% Zn and/or 0.05 to 3 wt.% Mg.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal joint between electronic components or a metal joint of an electronic module formed by joining electronic components to a printed wiring board.

[0002]

2. Description of the Related Art FIG. 1 is a block diagram of a general metal joint portion of an electronic module, showing an example in which electronic parts are mounted on a printed wiring board. In the figure, 1 is an electronic component, 2 is a wiring, 3 is an electrode which is a connection terminal, 4 is a printed wiring board, 5 is wiring, 6 is a layer containing Ni as a main component, and 10 is a layer containing Ni as a main component 6.
P rich layer, 7 is an electrode which is a connection terminal, 7a and 7b are insulating resins for forming the opening electrode 7, 8 is a solder layer, 9a, 9b and 9c are unavoidable intermetallic compounds, and 9a
Is an electronic component joining interface, 9b is a printed wiring board joining interface,
9c is an intermetallic compound in the solder layer.

In FIG. 1, electronic component 1 is electronic component 1.
The lead-type electrode 3 having a copper surface plated with solder through the wiring 2 is provided, and the wiring board 4 is provided with the electrode 7 in which a part of the wiring 5 of the printed wiring board is opened with insulating films 7a and 7b. There is. The surface of the electrode 7 is plated with Ni as a main component, and the surface thereof is further plated with Au. When the electrode 3 and the electrode 7 are joined by solder, the Au plating diffuses into the solder layer 8 and becomes the intermetallic compound 9c.
Also, joining the electrode 3 and the electrode 7 means that the electrode 3
And the plating layer containing Ni as a main component are joined via the solder layer 8. As a result, the intermetallic compound 9 is formed at the joint interface between the electrode 3 and the solder layer 8 and between the electrode 7 and the solder layer 8.
a and 9b are generated respectively.

Further, when P is contained in the plating layer containing Ni as a main component, the solder layer 8 side of the layer 6 containing Ni as a main component (more specifically, between the intermetallic compound 9) after the bonding treatment is performed. ), A P-rich layer 10 in which P is concentrated is formed by diffusing the Ni component into the solder layer. In addition, in the present specification, the metal joint portion includes a layer 6 (including a P-rich layer 10) containing intermetallic compound 9a-solder layer 8-intermetallic compound 9c-intermetallic compound 9b-Ni as a main component in FIG. )
It refers to the whole.

FIG. 2 is a block diagram of a metal joint portion in a general electronic module having a different structure.
A case where a plating layer containing Ni containing P as a main component is provided and joined by solder is shown. In the figure, 3a and 3b are insulating resins for forming an opening electrode, 6a and 6b are layers containing Ni as a main component, and 10a is P formed on an electronic component bonding interface of the layer 6a containing Ni as a main component. The rich layer 10b is a P rich layer formed on the printed wiring board bonding interface of the layer 6b containing Ni as a main component.

In FIG. 2, the electronic component 1 is provided with a wiring 2, and an opening electrode 3 is formed by opening a part of the wiring 2 with insulating films 3a and 3b. A plating layer containing Ni as a main component is formed on the surface of the electrode 3, and a Sn-37 wt% Pb solder plating layer is applied before the solder joining process. The substrate 4 is provided with the wiring 5, and the opening electrodes 7 are formed by opening the insulating films 7a and 7b. A plating layer containing Ni as a main component is formed on the surface of the opening electrode 7, and a Sn-37 wt% Pb solder plating layer is formed on the surface thereof. By bringing the solder plating layers into contact with each other and heating them, the metal bonding portion is inevitably unavoidable, as shown in FIG. 2, the layers 6a and 6b containing P-rich layers 10a and 10b containing Ni as a main component, the solder layer 8, and Intermetallic compounds 9a, 9b, 9c.

As a specific example of the metal joint shown in FIGS. 1 and 2, a publication {Journal of the Japan Institute of Metals, Vol. 64, No. 3 (2
000) p. 213 ~ 217}, Sn-37wt% P
The following reports have been made on the cross-sectional structure of the metal joint when b solder and Ni-8 wt% P are joined. That is, Sn-37 wt% Pb, Ni
-8wt% P, Ni ₃ Sn ₄ , Ni from the solder side
-20 wt% P, Ni ₂ SnP, etc. are produced, but the detailed structure is unclear. It is considered that various intermetallic compounds are also generated in the layer containing Ni as a main component and other layers in the solder layer due to the electrode structure. That is,
The metal joint contains an unavoidable intermetallic compound, but basically, Sn-37 wt% Pb (solder layer containing Sn as a main component) and a layer containing Ni as a main component (Ni ₃ Sn ₄ , N ₃
i-20wt% P, Ni ₂ SnP, Ni-8wt% P
Etc.), where Ni ₃ Sn ₄ and Ni-8 wt% P
"Ni-20wt% P, Ni ₂ SnP" between
Is referred to as a P-rich layer as a layer having an increased P content in the figure.

By the way, laptop computers, mobile phones, etc.
In an electronic module applied to products that place importance on portability, reliability against drop impact is required, and particularly when the layer containing Ni as a main component is formed using Ni-P plating, A crack is generated and propagated between the P-rich layer (6 in FIG. 1, 6a or 6b in FIG. 2) and the solder layer 8, and the bonding strength is higher than that in the case of solder bonding with other metal such as copper. It was small, and it was feared that the drop impact property would deteriorate.

For this purpose, for example, Japanese Patent Laid-Open No. 11-1031
No. 64 discloses that a conductor pattern of a printed wiring board has an N
An electrode composed of a Ni layer made of iP and an Au layer covering the Ni layer is formed, and the electrode and the connection terminal of the electronic component are connected to each other.
A method of joining with a solder containing Cu and Zn is disclosed. This is to suppress the growth of the P-rich layer by the effect that Cu and Zn in the solder take P in the P-rich layer into the metal above it (on the solder side) and enhance the solder joint strength. .

[0010]

However, when Zn is added to the solder, the solder wettability is significantly deteriorated because the Zn is highly oxidized during melting. Therefore, in order to obtain a sufficient effect, if an effective amount of Zn is added, it is necessary to use a special flux, an inert atmosphere, etc. In addition to changing the melting point, a study of the joining process such as heating process Had to do. Further, the addition of Cu causes a decrease in wettability and an increase in melting point due to an increase in the addition amount, and addition to a large amount of solder is not preferable. Furthermore, by adding Zn and Cu to the solder, the ductility such as elongation of the solder material decreases, which makes it difficult to follow the deformation of the electronic component and the printed wiring board at the time of a drop impact, and the metal joint is relatively small. There was a problem that cracks might be generated by impact.

According to the above situation, using the current solder,
Furthermore, there is a strong demand for a metal joint that can be joined soundly with the current heating profile and has excellent drop impact resistance, and an electronic module including the same.

The present invention has been made to solve the above problems, and an object of the present invention is to obtain a metal joint having an improved solder joint strength and an excellent drop impact resistance.

[0013]

A first metal joint portion according to the present invention is a metal joint portion for joining a first connection terminal and a second connection terminal, and at least one of the connection terminals is provided. It is provided with a layer containing Ni as a main component and a solder layer containing Sn as a main component, which is bonded to the two layers, and is provided on one of the connection terminals.
Wt% P, 0.1-5.0 wt% Zn and 0.
It contains at least one of Mg in an amount of 05 to 3% by weight.

In a second metal joint portion according to the present invention, in the first metal joint portion, the first connection terminal is a connection terminal of an electronic component and the second connection terminal is a connection terminal of a printed wiring board. Alternatively, the first and second connection terminals are connection terminals of different electronic components.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION The metal joint portion of the embodiment of the present invention constitutes an electronic module by mounting at least one electronic component 1 on a printed wiring board 4 as shown in FIGS. 1 and 2, for example. In this case, the electrodes 3 and 7 electrically connected to the wirings 2 and 5 of the printed wiring board and the electronic component are first and
As the second connection terminal, the first and second connection terminals are electrically connected and connected, and the solder layer 8 and the layers 6, 6a and 6b containing Ni as a main component (P-rich layers 10, 10a, 10b) are connected.
Is included) and. Further, it is also a metal bonding part which connects one electronic component to another by electrically connecting the connection terminals by using one electrode of the plurality of electronic components as a first connection terminal and the other electrode as a second connection terminal. In particular, the metal joint according to the embodiment of the present invention has a N-based solder layer and an N-based solder layer.
a layer containing i as a main component, and the layer containing Ni as a main component is 4 to 10% by weight of P, 0.1 to 5.0% by weight of Zn and 0.05 to 3% by weight. And at least one of Mg.

The first and second connection terminals are joined to each other by the metal joint portion according to the embodiment of the present invention, for example, in the same manner as in the conventional method described above, the surface of the first connection terminal is plated with Ni as a main component. The layer is further plated with Au, and the second connection terminal and the plating layer containing Ni as a main component are joined by soldering.

First, the P content of the layer containing Ni as the main component of the metal joint is set to 4% by weight or more. To obtain less than 4% by weight, the formation rate of the plating layer containing Ni as the main component is set. Is too slow, and industrial application becomes difficult. Next, the amount of P in the layer containing Ni as the main component of the metal joint is set to 10% by weight or less. This is because the wettability of the solder is remarkably reduced, the soldering becomes practically difficult without Au plating, and the deposition rate of the Au plating becomes very small, which makes industrial application difficult.

Next, regarding the content of Zn, 0.1 wt%
If less than 5% by weight, no improvement effect is observed, and if more than 5% by weight, P
Similar to the above case, the wettability is lowered, and the solder layer after forming the metal joint becomes too hard, and the drop impact resistance is lowered. Although the above-described effects of Zn apply to Mg as they are, when compared with Zn of the same addition amount, Mg has a higher degree of wettability reduction and material curing degree, so 0.05% by weight or more and 3% by weight or less To do. From the viewpoint of wettability and ductility of solder, it is desirable to add as little as possible, and for the above reason, when Zn and Mg are co-added, the sum of the added amounts tends to be smaller, but for securing solder wettability. Is Zn
And the total Mg content is preferably 2.0% by weight or less.

Further, even if the solder containing Sn as a main component is lead-free solder, the same effect can be obtained if each metal of the metal joint is in the above range.

As an example of the Zn-containing plating technique as in the present embodiment, in addition to the above-mentioned Zn-containing Pb-free solder, the publication {Junal of the E
microchemical Society, 14
8 (4) C266 to C273, C274 to C279 (2
001)} discloses a technique relating to electroless Ni-Zn-P plating. However, the purpose of the plating technology in the above publication is to improve the corrosion resistance of steel,
It is only being studied as an alternative technique of the Zn-plated steel sheet that is generally used at present. Moreover, the compositions under study are only when Zn is 6 wt% or more and when about 2 wt% Zn and about 4 wt% Fe are co-added.

Therefore, for example, the electrodes plated with Ni-Zn-P having a composition containing 6% by weight of Zn are Sn-doped.
In the case of joining with the base solder, the Zn content is large, so that the surface oxidation is severe and the wettability with respect to the solder is extremely low. Therefore, it is necessary to separately consider the joining process such as flux and heating profile. Especially electroless Ni-Zn-P
In the case of plating, there is concern that Au plating cannot be formed soundly on the surface due to the large amount of Zn. When Fe is co-added with a reduced amount of Zn, the wettability is reduced and Fe and Sn
Causes a further increase in the mechanical strength of the solder due to the formation of a coarse intermetallic compound such as Fe ₂ Sn, or a grain boundary between the intermetallic compound and the solder serves as a crack propagation path, resulting in a metal joint having a low drop impact resistance. Is concerned.

As described above, in order to obtain a metal joint having excellent drop impact resistance, while suppressing growth of the P-rich layer, there are no voids, non-wetting, etc. It is essential that the ductility of the material is excellent, and that the metal joint, particularly the layer containing Ni as the main component, must have the above-described compositional configuration shown in the present embodiment. Furthermore, as described above, the metal bonding portion of the present embodiment can be obtained by a bonding process almost as it is without using a special flux or atmosphere. In addition, it is desirable that all the metal joints are the metal joints of the embodiment.
Just by applying it to the metal joint having the lowest drop impact property, the drop impact property of the electronic module is significantly improved.

[0023]

[Examples] (Sample preparation method) As an electronic component, an electrode having an opening diameter of 0.4 mm and 0.45 at 0.75 mm pitch were used.
A 288-pin dummy chip scale package (referred to as CSP and having a 15 mm square and a package thickness of about 2 mm excluding the solder balls) provided with 63Sn-37 wt% Pb solder balls 32 having a diameter of mm was used. FIG. 3 is an explanatory view of the dummy chip scale package (CSP) according to the embodiment of the present invention, FIG. 3A is a perspective view of the CSP,
(B) is an enlarged sectional view showing a portion A in (a),
In the figure, 31 is a CSP, 32 is a solder ball, 33 is a copper wiring, 34 is a substrate, 35 is a solder resist, 36 is a mold resin, 37 is an electrode, and 38 is a wire. As shown in FIG. 3, the solder balls 32 are provided on the electrodes 37 of the copper wiring 33 via the electrolytic Ni plating 33 of 5 μm. A 30 m × 150 mm × 0.5 mm glass epoxy multilayer substrate {GE4F: JIS C6486} was used as a printed wiring board for testing. The printed wiring board is provided with an opening electrode having a diameter of 0.4 mm, and an electroless plating layer containing Ni as a main component and having a thickness of 5 μm and an electroless Au plating layer having a thickness of 0.05 μm are formed on the surface of the copper foil. Was set up. The plating layer containing Ni as a main component forms a layer containing Ni as a main component in the metal bonding portion of the present invention by a bonding treatment. The composition of the layer containing Ni as a main component is shown in Table 1 as Example 1. 16 and Comparative Examples 1 to 9,
The composition of the plating layer containing Ni as the main component is adjusted.

[0024]

[Table 1]

It was not possible to obtain a P content of less than 4% by weight and more than 10% by weight. Therefore, in the samples that were actually subjected to the drop impact test, P was 4% by weight or more and 1
The thing of 0 weight% or less was used.

Next, a flux is applied to the Au-plated surface, the CSP is brought into contact with the surface of the open electrode of the printed wiring board so that the solder balls face downward, and the CSP is placed on a hot plate set at 240 ° C. for 30 seconds. Soldering was performed by mounting. The lead connection to the tester was performed using 63Sn-37 wt% Pb thread solder. After the sample was prepared, the flux was washed with acetone and isopropyl alcohol. The total resistance value through all the bumps of the sample thus manufactured was about 1 to 2Ω.

The adjustment of the composition of the plating layer containing Ni as the main component will be described. The amounts of Zn, Mg, and P in the plating layer containing Ni as the main component and the layers containing Ni as the main component obtained by joining the plating layers were compared. That is, the above N
The amount of the metal element obtained by adjusting the diameter of the electron beam so as to contain the entire thickness of the layer containing i as a main component, and the characteristics emitted by the electron beam from the entire thickness of the plating layer containing Ni as a main component. As a result of comparison with the amounts of the above-mentioned metal elements quantified by X-ray intensity, it was confirmed that the amounts of the above-mentioned metal elements were almost the same, so in practice, the composition of the plating layer containing Ni as the main component was The composition value was adjusted to be the same as the composition value (Table 1) of the layer containing Ni as a main component to be obtained by.

(Identification of metal joint) One of the 11 samples of each specification obtained as described above was randomly selected and subjected to resin-encapsulation and then cross-section polishing to obtain an X-ray analysis function. The structure was observed and the element distribution was investigated using an electron microscope, and shown in Table 1 (Examples 1 to 16 and Comparative Examples 1 to 1).
9). In addition, the metal bonding part analyzed was performed on one bump in which the number of cracks was highest as a result of the preliminary experiment.

In addition, the analysis area (the characteristic X
In the region where the line is measured), the diameter of the electron beam was adjusted to include the entire layer thickness containing Ni as the main component.

(P-rich layer suppression effect determination method) Using the above-mentioned cross-section observation sample, an electron beam was irradiated in the thickness direction on the joint interface between the layer containing Ni as the main component and the solder, and the emitted P was emitted. The characteristic X-ray intensity of the above was continuously monitored in the distance direction, and the difference between the highest intensity value (x _max ) and the average strength (x ₀ ) of the solder part and the average strength (x _p ) of the Ni plating layer were measured. When the ratio {(x _max −x ₀ ) / (x _p −x ₀ )} with the difference of the average strength (x ₀ ) of the solder layer is 1.5 times or more, the concentration of P is remarkable. When the bonding reliability was lowered, x was shown, and when it was less than 1.5 times, it was described as ◯ when the effect of suppressing the formation of the P-rich layer was exhibited.

(Drop Impact Property Evaluation Method) FIGS. 4 and 5 are views for explaining the drop impact property evaluation method. FIG. 4 is an explanatory view showing an outline of the test method, and FIG. 5 is a drop impact property evaluation. FIG. 3 is an enlarged configuration diagram showing a metal bonding state between the electronic component used in FIG. In the figure, 11 is an electronic part (test pattern wiring for drop impact evaluation), 12 is a printed wiring board of a test board (test pattern wiring for drop impact evaluation), 13 is a metal joint, 14 is a frame, 16a, 1
6b is a terminal electrode for conductor resistance measurement, 17a and 17b are leads for conductor resistance measurement, 18 is a continuous conductor resistance monitor, 19 is a support, 20 is a mount, 21 is test pattern wiring (electronic component side), 22 is test pattern wiring (Test board side).

As shown in FIG. 4, wiring 2 of electronic component 11
Both the wiring 1 and the wiring 22 of the printed wiring board 12 are made of copper foil, and two open electrodes are connected to each other.

As shown in FIG. 4, a sample obtained by joining the electronic component 11 to the printed wiring board 12 at the metal joining portion 13 is shown in FIG.
It was screwed to the frame 14 as shown in FIG. Frame 1
The column 4 is connected to the column 19 by a rail, and can be moved only in the vertical direction along the column 19. Frame 1
4 was raised to a height of about 75 cm and dropped freely on the pedestal 20 made of oak wood. Also, on the substrate 16a, 16
b Lead wires 17a and 17b were drawn out from each of the two terminals by soldering, and a conductor resistance value passing through all solder joints and wirings in the electronic component was continuously monitored by a tester 18.

The initial resistance value when all metal joints are properly joined and the resistance value when dropped for each number of times are compared, and a tester is used so that a buzzer is activated when the resistance value rises by 50%. It was set. At this time, the number of evaluation samples is 10 for each specification, and the average value of the number of drops until the buzzer sounds is shown in Table 1. Needless to say, the larger the average number of drops is, the better the drop impact resistance is. .

The following results were obtained from Table 1. Comparative Example 1
The metal joint sample of 4 having a Zn content of less than 0.1% by weight or a Mg content of less than 0.05% by weight has an average drop frequency of less than 12 in the drop impact evaluation result. Therefore, it is difficult to apply it to products that emphasize portability. Further, the Zn content in Comparative Examples 5, 7, and 9 was 5
A metal joint sample in excess of wt%, and Comparative Example 6,
Even in the metal-bonded portion samples in which the Mg contents of 8 and 9 exceeded 3.0% by weight, the improvement effect was not observed in the drop impact resistance evaluation as in Comparative Examples 1 to 4 above.

On the other hand, the content of Zn is 0.1% by weight or more and 5
For Examples 1, 3 to 5, 6, 9 to 16% by weight or less, and for Examples 2, 3, 7 to 16 in which the content of Mg is 0.05% by weight or more and 3.0% by weight or less, Both are above the above-mentioned comparative examples, and in the drop impact resistance evaluation results, the average value of the number of drops exceeds 20 times, and a remarkable improvement effect is shown. In particular, when Zn alone is added, Examples 1, 3, 4, 5, 6
From the comparison with Comparative Examples 1, 2, and 5, it can be seen that a significant improvement effect is exhibited at 0.1% by weight or more, and a peak appears near 2% by weight. Similarly, when Mg alone is added, as shown in Example 2, when it is 0.05% by weight or more, a remarkable improving effect is observed, and it is found that the peak appears near 1.5% by weight in Example 7. Further, in the case of Zn and Mg co-addition, good drop impact resistance was exhibited in the vicinity of Zn 2 wt% and Mg 0.5 wt% in Example 14.

In the range of 4 to 10% by weight, P substantially depends on the added amounts of Zn and Mg.

Further, as shown in Table 1, since there is no significant difference in the suppression effect of the P-rich layer between the embodiment and the comparative example, the drop impact resistance not only suppresses the P-rich layer but also the metal bonding. It was found that the ductility of the part was also greatly affected.

The electroless plating for obtaining the layer containing Ni as the main component in the above-mentioned example was performed by electrolytic plating, but the same effect was confirmed. Furthermore, in the above-mentioned embodiment, the solder ball is made of Pb-free solder (Sn-
0.7wt% Cu, Sn-1.0wt% Ag-0.5w
t% Cu, Sn-3 wt% Ag-0.5 wt% Cu), the same effect was confirmed.

The metal joint of this example was applied to a joint of a mobile phone substrate having the lowest drop impact resistance, and incorporated in a mobile phone sample to perform a drop impact test. as a result,
It showed a remarkable improvement effect. From this, when the metal joint portion of the embodiment of the present invention is increased in order of decreasing drop impact resistance,
As the number of applied joints increased, the effect of improving the drop impact resistance of the mobile phone sample became remarkable.

The present invention is not limited to the manufacturing method shown in the above embodiment. Further, it can be easily inferred that the present invention can be applied not only to electronic components and printed wiring boards, but also to joining semiconductor elements to each other. Also,
Since this metal joint has superior drop impact resistance compared to conventional products,
It can be analogized that it is also excellent in heat fatigue resistance.

[0042]

The first metal joining portion of the present invention is a metal joining portion for joining the first connecting terminal and the second connecting terminal, and is provided on at least one of the connecting terminals. And a solder layer containing Sn as a main component, which is bonded to this layer.
The layer whose main component is i is 4 to 10% by weight of P and 0.1
~ 5.0 wt% Zn and 0.05-3 wt% Mg
And at least one of them are effective in obtaining a metal joint having excellent drop impact resistance.

In the second metal joint portion of the present invention, in the first metal joint portion, the first connection terminal is a connection terminal of an electronic component, and the second connection terminal is a connection terminal of a printed wiring board. The first and second connection terminals are connection terminals for different electronic components, and there is an effect of obtaining an electronic module having excellent drop impact resistance.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a general metal joint portion of an electronic module.

FIG. 2 is a configuration diagram of a metal joint portion in a general electronic module having another structure.

FIG. 3 is an explanatory diagram of a dummy chip scale package (CSP) according to an exemplary embodiment of the present invention.

FIG. 4 is an explanatory diagram showing an outline of a drop impact resistance evaluation method for metal joints according to an embodiment of the present invention.

FIG. 5 is an enlarged configuration diagram showing a metal bonding state of an electronic component and a test board used in a drop impact resistance evaluation method of a metal bonding portion according to an example of the present invention.

[Explanation of symbols]

1, 11 electronic parts, 3 electrodes for connection terminals, 4, 1
4 printed wiring board, 6, 6a, 6b Ni-based layer, 7 connection terminal electrode, 8 solder layer, 1
0, 10a, 10b P rich layer, 13 metal junction.

Continued front page    (72) Inventor Takanori Sone             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Toshio Umemura             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Masato Koyama             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Arai et al.             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Takahiro Nagamine             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Tsuyoshi Abe             1-1 1-1 Imajuku Higashi, Nishi-ku, Fukuoka City, Fukuoka Prefecture             Fukuryo Semicon Engineering Co., Ltd. F-term (reference) 5E319 AB01 AC01 AC17 BB01 CC33                       GG03

Claims (2)

[Claims] 1. A metal bonding part for bonding a first connection terminal and a second connection terminal, wherein a layer containing Ni as a main component is provided on at least one of the connection terminals. , A solder layer containing Sn as a main component bonded to this layer, wherein the layer containing Ni as a main component is 4 to 1
A metal joint comprising 0% by weight of P and 0.1 to 5.0% by weight of Zn and at least one of 0.05 to 3% by weight of Mg. 2. The first connection terminal is a connection terminal of an electronic component,
Whether the second connection terminal is a connection terminal of the printed wiring board,
The metal bonding part according to claim 1, wherein the first and second connection terminals are connection terminals of different electronic components.