JP2003151474A - Wiring substrate, method for manufacturing the same, and image display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a higher quality image by materializing an airtight vessel capable of retaining vacuum atmosphere or the like while making an image display device or an image forming device using a wiring substrate brighter and finer. SOLUTION: This wiring substrate for a display panel has plural wiring electrodes on the substrates, an airtight vessel formed by arranging opposing substrates on substrate surfaces having the wiring electrodes via a frame member, and an image forming member in the airtight vessel. Average angles between sections of wires 24, 26 in an orthogonal projection area onto the wiring substrate of the image forming member forms and the wiring substrate are obtuse angles, and average angles between sections of wires 11, 12 in a area where a frame member 13 is arranged and the wiring substrate are acute angles.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display panel substrate in which a plurality of wiring electrodes are drawn from the inside to the outside of a container and drive signals are applied through the wiring, and image formation of a display device using the same. Regarding the device.

[0002]

2. Description of the Related Art Conventionally, as a display device, a gas discharge type device such as a PDP (plasma display panel) and a type (electron beam irradiation) of irradiating a light emitting member such as an FED (field emission display) with an electron beam. Type) is known. There are known two types of electron-emitting devices for electron beam irradiation-type displays, a thermoelectron source and a cold cathode electron source.

Cold cathode electron sources include field emission type elements (FE type elements), metal / insulating layer / metal type elements (MIM elements), surface conduction type electron emitting elements and the like.

Since the surface conduction electron-emitting device described above has a simple structure and is easy to manufacture, it has an advantage that a large number of it can be formed over a large area. Therefore, various applications have been studied to make full use of this feature. For example, it is applied to a charged beam source, a display device such as an image forming device, and the like. As an example, Japanese Patent Laid-Open No. 2000-25 by the present applicant
In 1778 and Japanese Patent Laid-Open No. 2000-251802, an image is formed as a high vacuum container (display panel) by bonding an electron source substrate formed by connecting a large number of electron-emitting devices to wiring in a matrix and a counter substrate on which a phosphor is arranged. A forming apparatus is disclosed.

[0005]

However, as described above, the electron source substrate formed by connecting a large number of electron-emitting devices in matrix wiring and the counter substrate on which the phosphor is arranged are bonded together to form a high vacuum container (display panel). When configuring the image forming apparatus described above, there are the following problems in increasing the area and quality of the image forming apparatus.

First, as a wiring material, a thick film paste made of a metal and a glass-based material is used to satisfy the required wiring resistance. However, if high definition is promoted in order to improve the quality of the image forming apparatus, within the display area. In, it is necessary to make the wiring width sufficiently small. Although it depends on the purpose of use of the display device, it is desirable to set the wiring width to about 70 μm or less for a high-definition display device that can be sufficiently utilized for general purposes.

Further, as in the surface conduction electron-emitting device described in JP-A-2000-251778, the opposing gaps between the electrode pairs (device electrodes) are arranged parallel to the row (Y) direction wiring (lower wiring), When an electron source substrate configured such that the electron emitting portion is formed in a line shape substantially parallel to the Y-direction wiring (lower wiring) 2 is used, in the display area, in the Y-direction, due to the requirement of controlling the trajectory of the emitted electrons. The edge height of the wiring is required to be sufficiently high (for example, about 14 μm).

Further, as described above, a sufficient height is necessary to sufficiently reduce the resistance value of the wiring.

The "display area" means an orthogonal projection area of an image forming member such as fluorescent light onto the wiring board, and the electron source board and the transparent board on which the phosphor is formed are arranged so as to face each other. When the display panel is configured by the above, the area of the electron source substrate (wiring board) facing the phosphor is equal to the orthogonal projection area of the image forming member (phosphor) on the wiring board.

We have studied a specific means for realizing the formation of a wiring having a minimum line width and a sufficient height (thickness) in order to achieve both high definition and low resistance of the matrix wiring in the display area. As a result, they have found that it is preferable to shift from a conventional screen printing method to a photolithography method using a photo paste material as a wiring forming method. That is, since the conventional printed wiring has a gentle semicircular cross section, it is difficult to realize a high-definition wiring width while having a sufficient height. Narrow width and sufficient height (thickness)
It is considered that a rectangular wiring having a sharp edge is preferable as a wiring shape that satisfies both requirements, and a photolithography method using a photo paste is preferable for forming a wiring having this shape.

However, for the purpose of reducing the wiring resistance and controlling the electron trajectories of the electron-emitting devices as described above, the pattern edge is increased as the thickness of the photopaste material is increased to secure the edge height of the wiring. There is a problem that the substrate is likely to be curled as well as curled (drilling of the pattern edge), and the airtightness of the panel sealing portion on the outer periphery of the display area is deteriorated (a leak path is generated).

The main object of the present invention is to remedy such drawbacks. An image display device using a wiring board,
An object of the present invention is to realize an airtight container capable of maintaining a vacuum atmosphere and the like while achieving high brightness and high definition of an image forming apparatus so that a higher quality image can be obtained.

[0013]

That is, the wiring board of the present invention has a plurality of wiring electrodes on the board, and is hermetically sealed by arranging a counter substrate via a frame member on the surface of the board having the wiring electrodes. A wiring board for a display panel forming a container and having an image forming member in the airtight container, wherein a cross section of the wiring in an orthogonal projection region of the image forming member onto the wiring board is formed with the wiring board. The average angle formed is an obtuse angle, and the average angle formed by the cross section of the wiring with the wiring board in the region where the frame member is arranged is an acute angle.

The present invention is particularly effective when the wiring has a thickness of 8 μm or more.

The present invention is particularly effective when the atmosphere inside the airtight container is a reduced pressure atmosphere.

Further, in the invention, it is preferable that a width of the wiring in an orthogonal projection area of the image forming member on the wiring board is smaller than a width of the wiring in an area where the frame member is arranged. .

Further, in the manufacturing method of the present invention, a plurality of wiring electrodes are provided on the substrate, and the counter substrate is arranged on the surface of the substrate having the wiring electrodes via a frame member to form an airtight container. A method of manufacturing a wiring board for a display panel having an image forming member in an airtight container, the method comprising forming a wiring by a photolithography method using a photo paste in an orthogonal projection region of the image forming member on the wiring board. And a step of forming wiring in a region where the frame member is arranged by pattern printing using a printing paste ink.

Further, according to another manufacturing method of the present invention, a plurality of wiring electrodes are provided on a substrate, and a counter substrate is arranged on the surface of the substrate having the wiring electrodes via a frame member to form an airtight container. A method for manufacturing a wiring board for a display panel having an image forming member in the hermetic container, wherein a photo paste is provided in an area where the image forming member is orthographically projected onto the wiring board and the frame member is arranged. A step of forming a wiring pattern by a photolithography method using, on the wiring pattern in the region where the frame member is arranged, at a temperature higher than the burning temperature of the organic component in the photopaste and lower than the softening point of the inorganic component. The method is characterized by including a step of forming an overcoat layer that is burnt down and a step of simultaneously firing the wiring pattern and the overcoat layer.

Further, according to another manufacturing method of the present invention, a plurality of wiring electrodes are provided on a substrate, and an opposing substrate is arranged on the surface of the substrate having the wiring electrodes via a frame member to form an airtight container. A method for manufacturing a wiring board for a display panel having an image forming member in the hermetic container, wherein a photo paste is provided in an area where the image forming member is orthographically projected onto the wiring board and the frame member is arranged. Forming a first wiring by a photolithography method using, and forming a second wiring on the first wiring in the region where the frame member is arranged by pattern printing using a printing paste ink And a process.

An image display device of the present invention is characterized by using the wiring board according to any one of the above inventions.

According to the present invention, in the display area, a desired wiring height is secured to reduce wiring resistance, and the structure of the present invention is used as wiring for supplying a signal to the electron-emitting device. In this case, the orbital control of the emitted electrons can be favorably performed. Further, it is possible to realize a wiring board having no edge curl or side crack of the wiring in the sealed portion outside the display area.

Further, in an image forming apparatus such as an image display apparatus using such a wiring board, it is possible to realize a highly airtight and highly reliable image forming apparatus capable of maintaining a vacuum or the like while improving the luminous efficiency.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below. Prior to that, the relationship between the wiring shape and the airtightness in the sealing portion will be described in detail with reference to the drawings.

FIG. 16 shows a lead-out portion in a structure in which a wiring is drawn from the image display area to the end of the board in a so-called matrix wiring board in which the X-direction wiring and the Y-direction wiring are crossed with an insulating layer interposed therebetween. FIG. 7 is a partially enlarged view of a case where the wiring shape of a part of the sealing portion has an edge curl, and Y
Due to the cut-out of the pattern edge of the direction-leading wiring 12 and the crack (called a side crack) generated in the substrate,
Leak paths (124, 126) formed along the wiring
It is the figure which represented typically.

According to the study by the present inventor, it has been clarified that the cracks generated in such a substrate are suppressed by the formation of the insulating layer. Therefore, in order to prevent the occurrence of such cracks, it is conceivable to form the insulating layer at the panel sealing portion at the same time as forming the insulating layer at the intersection of the matrix wiring portions. Since this insulating layer pattern also has the effect of alleviating irregularities due to the wiring pattern, it is also effective in the case of vacuum formation through a resin O-ring as the vacuum container forming member 13.

However, if the pattern edge is carved, a leak path called a mouse hole 124 is created between the pattern edge and the insulating layer, and the vacuum hermeticity is deteriorated like the leak path due to a crack generated in the substrate.

On the other hand, regarding the mouse hole due to the carving of the pattern edge, a leak path can be eliminated by using frit glass as the vacuum container forming member 13. However, even if the frit glass is used, it is not possible to deal with the vacuum leak due to the crack generated in the substrate. Further, considering the case where a resin O-ring is used as the vacuum container forming member 13, the leak path cannot be eliminated unless the angle of the wiring section of the sealing portion formed with the substrate is at least an acute angle.

Further, according to the study by the present inventor, it has been found that the occurrence of the edge curl of the wiring and the crack of the substrate has the dependence on the pattern width in addition to the dependence on the film thickness. That is, in a wiring having a certain height (thickness), when the width of the wiring becomes large, the substrate is likely to be cracked and edge curl is likely to occur. Therefore, the occurrence of edge curl and substrate crack itself can be prevented to some extent by reducing the wiring width.

However, as described above, in the lead-out wiring and the mounting terminal portion, the line width has to be set wider than in the display area due to the requirement of wiring resistance.

Therefore, there is a problem to be solved in the realization of the airtight container even for the rectangular wiring that achieves both the reduction of the wiring resistance and the high definition of the wiring pattern, and the reduction of the wiring resistance, the realization of the high definition pattern, and the airtight container. Further improvement is required to satisfy all the formation of

As a result of comprehensively considering various conditions required for the wiring substrate for the display panel as described above, the present invention that the wiring shape is rectangular in the display area and the wiring shape is blunted in the sealing portion. Came to. That is, in other words, in the display area, the average angle formed by the cross section of the wiring with the substrate is an obtuse angle, and the average angle formed by the cross section of the wiring in the sealing portion where the frame member is arranged with the substrate is the acute angle. With the wiring shape, it is possible to realize the above-described wiring with low resistance, high definition, and an airtight container. still,
Here, the obtuse average angle that the cross section of the wiring forms with the substrate is the relationship between the wiring having the cross-sectional shape as illustrated in FIG. 18 and the substrate surface, and the average angle that the cross section of the wiring forms with the substrate. The acute angle is the relationship between the wiring having the cross-sectional shape as illustrated in FIG. 17 and the substrate surface.

In order to further elaborate the present invention,
The relationship between the cross-sectional shape of the wiring in the sealed portion and the cracks and leak paths of the substrate will be described.

17 and 18 schematically show the average angle formed by the wiring cross section with the substrate. If the average angle is an acute angle as shown in FIG. 17, substrate cracking is unlikely to occur, and if the average angle is an obtuse angle as shown in FIG. 18, substrate cracking is likely to occur. In addition, the fact that the average angle is acute is in the direction opposite to the edge curl, which is also effective in achieving vacuum tightness.

Further, from the viewpoint of pattern stability, resistance value, and process conditions for obtaining the resistance value, in the currently available wiring forming method, it is easy to make the average angle of the pattern edges obtuse in the photolithography process and The average angle of the edges can easily be made acute.
In addition, as a combination of this, a pattern film whose average angle of pattern edges is not large in the photolithography process is overlapped with a wire whose average angle of pattern edges is acute in the screen printing process. It was found that wiring can be obtained.

The present invention was made on the basis of the above findings, and its configuration will be specifically described below. In the following description, the cross-sectional shape of the wiring is made different between the image display area (the orthogonal projection area on the substrate surface on which the wiring of the image forming member is formed) and the outside of the image display area including the sealing portion. Although the form will be described, this is a particularly preferable form in consideration of manufacturing and the like, and it is sufficient if the cross-sectional shapes of the wiring in the image display region and the sealing portion are respectively desired shapes. Hereinafter, embodiments of the present invention will be described.

The present applicant has made many proposals so far regarding the electron-emitting device and its application, and the application examples of the image forming apparatus using the surface conduction electron-emitting device will be introduced as a part thereof.

Regarding the element production by the ink jet method, JP-A-9-102271 and 2000-2
Japanese Patent Application Laid-Open No. 64-0313332 and Japanese Patent Application Laid-Open No. 7-326311 describe in detail, as examples of arranging these elements in an XY matrix shape, in Japanese Patent No. 51665.
Further, regarding the wiring forming method, Japanese Patent Laid-Open No. 8-185818
JP-A-9-50757 and the driving method are described in detail in JP-A-6-342636.

Further, for example, JP-A-7-23525
It is described in detail in Japanese Patent No. 5 and Japanese Patent No. 2903295.

The outline of the surface conduction electron-emitting device disclosed in the above publication will be briefly described below.

The above surface conduction electron-emitting device is shown in FIG.
As schematically shown in FIG. 1, it has a pair of device electrodes 2 and 3 facing each other on a substrate 1 and a conductive film 4 connected to the device electrodes and having an electron emitting portion 5 in a part thereof.

The electron-emitting portion 5 includes a portion in which a part of the conductive film 4 is destroyed / deformed or altered to form a gap, and activation is performed on the inside of the gap and on the conductive film in the vicinity thereof. By performing the so-called process, a deposit containing carbon and / or a carbon compound as a main component is formed. In addition,
The deposits have a shape facing each other with a gap portion that is narrower than the gap formed in the conductive film.

FIG. 2 shows an example of the structure of an electron source substrate in which a large number of surface conduction electron-emitting devices are connected by wiring in a matrix. In FIG. 2, 21 is a substrate, 2 and 3 are element electrodes, 4 is a conductive film (element film), 5 is an electron emitting portion, 24 is a Y-direction wiring (lower wiring), 25 is an insulating layer, and 26 is an X direction. Wiring (upper wiring).

The electron source substrate has a plurality of Y-direction wirings (lower wirings) 24 on the substrate 21, and a plurality of X-direction wirings (upper wirings) 26 on the Y-direction wirings 24 via an insulating layer 25. And an electron-emitting device including an electrode pair (device electrodes 2 and 3) is disposed near the intersection of the bidirectional wirings,
One of the electrode pairs (element electrode 3) is connected to the Y-direction wiring 24, and the other (element electrode 2) is connected to the X-direction wiring 26 through a contact hole provided in the insulating layer 25. .

An example of the method of manufacturing the electron source substrate will be briefly described below with reference to FIGS. 3 to 6.

First, a plurality of electrode pairs (element electrodes 2 and 3) are formed on the substrate 21 (see FIG. 3).

Next, a plurality of Y-direction wirings (lower wirings) 24 are formed in a linear pattern so as to be in contact with one of the device electrodes (device electrode 3) and to connect them (see FIG. 4). Although not shown, the terminal portion of the Y-direction wiring (lower wiring) 24 has a larger line width for use as a lead-out wiring to the external drive circuit. The Y-direction wiring (lower wiring) 24 functions as a signal electrode after being formed into a panel as an image forming apparatus using the present electron source substrate.

Next, an insulating layer 25 is formed to insulate the upper and lower wirings (see FIG. 5). This insulating layer 25 covers the intersection of the previously formed Y-direction wiring (lower wiring) 24 below the X-direction wiring (upper wiring), which will be described later. A contact hole 27 is formed at a connection portion corresponding to each element so that the element electrode (element electrode 2) can be electrically connected.

Next, X is formed on the insulating layer 25 previously formed.
Direction wiring (upper wiring) 26 is formed (see FIG. 6). The X-direction wiring 26 intersects with the Y-direction wiring 24 with the insulating layer 25 interposed therebetween, and a contact hole 27 provided in the insulating layer 25.
The part is connected to the device electrode 2. Although not shown, the lead wiring to the external drive circuit is also formed by the same method. The X-direction wiring 26 acts as a scanning electrode and a Y acting as a signal electrode after being formed into a panel as an image forming apparatus.
Since a wiring resistance lower than that of the directional wiring 24 is required, the line width or the film thickness is designed to be thick.

Next, between the device electrodes 2 and 3, for example, JP-A-9-102271 or 2000-251665.
Conductive film 4 by the inkjet method described in Japanese Patent Publication No.
Are formed (see FIGS. 2 and 7).

Next, a pulse voltage is applied between the bidirectional wirings 24 and 26, and a current is applied between the device electrodes 2 and 3 to locally break, deform or change the quality of the conductive film 4, thereby electrically. An electron-emitting portion (gap) having a high resistance is formed on the surface (forming step). An example of the pulse voltage waveform is shown in FIG. At this time, as shown in FIGS. 2 and 15, the electron emission portion (gap) 5 is formed in the gap portion between the device electrodes 2 and 3 facing each other substantially parallel to the gap.

Next, in an atmosphere of a gas containing carbon atoms,
Similar to the above-mentioned forming, by applying a pulse voltage between the bidirectional wirings 24 and 26 and energizing between the device electrodes 2 and 3, carbon or a carbon compound is deposited as a carbon film in the vicinity of the gap (activating step). ). FIG. 11 shows an example of a voltage waveform used for activation.

Through the above steps, an electron source substrate having a large number of surface conduction electron-emitting devices connected in matrix wiring on the substrate is manufactured.

Next, the basic characteristics of the electron-emitting device manufactured by the above device structure and manufacturing method will be described with reference to FIGS. 9 and 10.

FIG. 9 is a schematic diagram of a measurement / evaluation apparatus for measuring electron emission characteristics of the electron-emitting device having the above-described structure. In FIG. 9, reference numeral 51 is a power supply for applying a device voltage Vf to the device, 50 is an ammeter for measuring a device current If flowing through the electrode portion of the device, and 54 is an emission current emitted from an electron emitting portion of the device. An anode electrode for capturing Ie, 53 is a high-voltage power supply for applying a voltage to the anode electrode 54, and 52 is an ammeter for measuring the emission current Ie emitted from the electron emission portion of the device.

To measure the device current If flowing between the device electrodes 2 and 3 of the electron-emitting device and the emission current Ie to the anode, a power source 51 and an ammeter 50 are connected to the device electrodes 2 and 3, and the electron A power source 53 and an ammeter 5 above the emitting element
The anode electrode 54 connected to 2 is arranged.

The electron-emitting device and the anode electrode 54 are installed in a vacuum device 55, and the vacuum device is equipped with equipment necessary for the vacuum device such as an exhaust pump 56 and a vacuum gauge. The device can be measured and evaluated below. The voltage of the anode electrode 54 was 1 kV to 10 kV, and the distance H between the anode electrode and the electron-emitting device was measured in the range of 2 mm to 8 mm.

FIG. 10 shows a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf measured by the measurement / evaluation apparatus shown in FIG. Although the emission current Ie and the device current If are significantly different in magnitude, in FIG.
For a qualitative comparative examination of changes in f and Ie, the vertical axis is expressed in arbitrary units on a linear scale.

This electron-emitting device has three characteristics with respect to the emission current Ie.

First, as is apparent from FIG. 10, in the present device, when a device voltage higher than a certain voltage (called threshold voltage, Vth in FIG. 10) is applied, the emission current Ie rapidly increases. On the other hand, at the threshold voltage Vth or lower, the emission current Ie is hardly detected. That is, the emission current I
It can be seen that the characteristics as a non-linear element having a clear threshold voltage Vth with respect to e are exhibited.

Secondly, since the emission current Ie depends on the element voltage Vf, the emission current Ie can be controlled by the element voltage Vf.

Thirdly, the emitted charges captured by the anode electrode 54 depend on the time for which the device voltage Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time for which the device voltage Vf is applied.

Next, the electron source substrate and the image forming apparatus according to the present invention will be described.

The basic structure of the electron source substrate of the present invention is as follows.
The configuration illustrated in FIG. 2 can be given.

In the electron source substrate of the present invention, a plurality of Y-direction wirings (lower wirings) 24 and the column-direction wirings 24 are provided on the substrate 21.
Wiring in the X direction (upper wiring) through the insulating layer 25 on
26 is formed, and electron-emitting devices including electrode pairs (device electrodes 2 and 3) are arranged near the intersections of the bidirectional wirings. In particular, as shown in FIG. The gaps between the two and the three facing each other are arranged substantially parallel to the Y-direction wiring (lower wiring).

The characteristics of the electron source substrate according to one embodiment of the present invention will be described with reference to FIG. 1. When a display panel is constructed by disposing a transparent substrate on which a light emitting material is formed so as to face the light emitting material, In the display region facing the formed region, at least the Y-direction wiring 24 has a cross-sectional shape as illustrated in FIG. 18 in which the average angle formed with the substrate is an obtuse angle, and outside the display region, XY. The bidirectional wiring, that is, the X-direction lead-out wiring 11 and the Y-direction lead-out wiring 12 forms an acute angle with the substrate as shown in FIG.
The point is to have a cross-sectional shape as illustrated in FIG.

The average angle referred to in the present invention means the angle formed by a straight line (composite line) obtained by synthesizing the contour lines of the wiring cross section and the surface of the substrate, and this synthetic line is the width of the wiring. In the case of a wiring shape in which becomes narrower in the direction away from the substrate, an acute angle is formed with the substrate surface, and in the case of a wiring shape in which the width of the wiring becomes wider in the direction away from the substrate,
Form an obtuse angle with the substrate surface.

It should be noted that, if the average angle formed by the wiring with the substrate is an acute angle, the direction of stress applied to the edge at the contact portion of the wiring with the substrate also becomes an acute angle with respect to the substrate surface. When the average angle formed with the substrate is an obtuse angle, the direction of stress applied to the edge at the contact portion of the wiring with the substrate is also an obtuse angle with respect to the substrate surface.

A specific method of forming each wiring having the above-mentioned cross-sectional shape will be described in detail in the embodiments described later. (1) At least the Y-direction wiring 24 in the display area
Is formed by a photolithography method using a photo paste,
Outside the display area, XY bidirectional lead wires 11 and 12
Both are methods of forming by pattern printing by screen printing. (2) At least the Y-direction wiring 24 in the display area
Outside the display area, the XY bidirectional lead wires 11,
After forming a pattern by a photolithography method using a photo paste, both 12 and the overcoat layer are burned out at a temperature higher than the burning temperature of the organic component in the photo paste and a temperature lower than the softening point of the inorganic component at least outside the display area. How to bake. Is preferred.

A photosensitive resin such as a photosensitive acrylic resin can be used as the overcoat layer.

By controlling the cross-sectional shape of each wiring in the display area and outside the display area as described above, the desired height of the wiring in the Y direction can be secured in the display area to control the trajectory of the emitted electrons. The electron source substrate can be satisfactorily processed, and an electron source substrate having no edge curl and side cracks in the bidirectional wiring outside the display region can be obtained.

Next, an example of the image forming apparatus of the present invention using the electron source substrate having the above-mentioned simple matrix arrangement will be described with reference to FIG.

In FIG. 12, 21 is the electron source substrate, 82 is a face plate having a fluorescent film 84, a metal back 85 and the like formed on the inner surface of a glass substrate 83, and 86 is a supporting frame. The electron source substrate 21, the support frame 86, and the face plate 82 are bonded by frit glass, and 400
By firing at ~ 500 ° C for 10 minutes or more, it seals and
The envelope 90 is configured.

The face plate 82 and the electron source substrate 2
By installing a support body (not shown) called a spacer between the outer case 1 and the case 1, it is possible to configure the envelope 90 having sufficient strength against atmospheric pressure even in the case of a large area panel.

FIG. 13 is an explanatory view of the fluorescent film 84 provided on the face plate 82. In the case of monochrome, the fluorescent film 84 is composed of only the phosphor, but in the case of a color fluorescent film, it is composed of a black conductor 91 and a phosphor 92 called a black stripe or a black matrix depending on the arrangement of the phosphors. . The purpose of providing the black stripes and the black matrix is to make the color mixture or the like inconspicuous by making the portions of the three primary color phosphors, which are required for color display, between the respective phosphors 92 black, and to make the phosphor film 84 inconspicuous. This is to suppress a decrease in contrast due to reflection of external light.

A metal back 85 is usually provided on the inner surface side of the fluorescent film 84. The purpose of the metal back is to improve the brightness by specularly reflecting the light toward the inner surface side of the light emitted from the phosphor toward the face plate 82 side, and to act as an anode electrode for applying an electron beam accelerating voltage. Is. The metal back can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al by vacuum evaporation or the like.

When the above-mentioned sealing is performed, in the case of color, it is necessary to make the respective color phosphors correspond to the electron-emitting devices, so that it is necessary to perform sufficient alignment by a butting method of the upper and lower substrates.

The degree of vacuum at the time of sealing is required to be about ^10.sup.-5 Pa, and in some cases, a getter process is performed to maintain the degree of vacuum after the envelope 90 is sealed. this is,
Immediately before or after sealing the envelope 90, a getter arranged at a predetermined position (not shown) in the envelope is heated by a heating method such as resistance heating or high frequency heating.
This is a process of forming a vapor deposition film. The getter usually has Ba or the like as a main component, and maintains the degree of vacuum by the adsorption action of the vapor deposition film.

At this time, in the electron source substrate of the present invention, the edge curl and the side crack can be eliminated in the bidirectionally drawn wiring outside the display area, so that the generation of the leak path as shown in FIG. 16 is prevented and the vacuum reliability is improved. A high image forming apparatus can be realized.

[0079]

EXAMPLES Examples of the present invention will be described below, but the present invention is not limited to these examples.

[Embodiment 1] This embodiment is an example of manufacturing an electron source substrate in which a large number of surface conduction electron-emitting devices as shown in FIG. 2 are connected in matrix wiring. 2 in FIG.
1 is a substrate, 2 and 3 are device electrodes, 4 is a conductive film (device film), 5 is an electron emitting portion, 24 is a Y-direction wiring (lower wiring),
Reference numeral 25 is an insulating layer, and 26 is an X-direction wiring (upper wiring).

FIG. 2 shows only the inside of the display area of the electron source substrate. In the actually manufactured electron source substrate, as shown in FIG. 1, the Y-direction wiring 24 formed in the display area is displayed. Connected to the Y-direction lead wire 12 outside the area
The direction wiring 26 is connected to the X-direction leading wiring 11. Since the X-direction wiring 26 functions as a scanning electrode after being formed into a panel and requires a wiring resistance lower than that of the Y-direction wiring 24 functioning as a signal electrode, a design is made to make the line width thicker or thicker. .

Hereinafter, a method of manufacturing the electron source substrate of this embodiment will be described with reference to FIGS.

(Formation of device electrode) As the substrate 21, PD-200 (manufactured by Asahi Glass Co., Ltd.) containing a small amount of alkali components was used.
SiO as a sodium block layer on 8 mm thick glass
_Two films having 100 nm applied and baked were used.

Then, titanium Ti (thickness: 5 nm) was formed as an undercoat layer on the glass substrate 21 by a sputtering method, and ruthenium Ru (thickness: 40 nm) was formed thereon, and then a photoresist was applied and exposed. The device electrodes 2 and 3 were formed by patterning by a series of photolithography methods of developing, etching and etching (see FIG. 3). In this embodiment, the distance L between the device electrodes is L = 10 μm.
m, and the opposing length W = 100 μm.

(Formation of Y Direction Wiring) X as Common Wiring
Regarding the wiring material of the directional wiring 26 and the Y-directional wiring 24,
A low resistance is desired so that a substantially uniform voltage is supplied to a large number of surface conduction electron-emitting devices, and the material, film thickness, wiring width, etc. are appropriately set.

Y-direction wiring (lower wiring) 2 as signal wiring
4 was formed by a photolithography method using a photopaste material in a linear pattern so as to be in contact with one of the device electrodes 3 and to connect them. Material is silver Ag
Photopaste ink DC-206 (manufactured by Dupont) was screen-printed and then dried,
The pattern was exposed to light and developed. Then, the Y-direction wiring 24 was formed by firing at a temperature of about 480 ° C. (see FIG. 4). The Y-direction wiring 24 has a thickness of about 15 μm and a line width of about 50 μm.

(Formation of Insulating Layer) An insulating layer 25 is formed to insulate the upper and lower wirings. Electrical connection between the X-direction wiring (upper wiring) and the element electrode 2 is provided under the X-direction wiring (upper wiring) described later so as to cover the intersection with the previously formed Y-direction wiring (lower wiring) 24. In order to enable the above, a contact hole 27 was formed in the connection portion corresponding to each element (see FIG. 5).

Specifically, a photosensitive glass paste J1345 (manufactured by Dupont) containing PbO as a main component was screen-printed, and then exposed and developed. This was repeated 4 times, and finally firing was performed at a temperature of around 480 ° C. The insulating layer 25 has a total thickness of about 30 μm and a width of 150 μm.
μm.

(Formation of X-direction wiring) On the insulating layer 25 formed previously, Ag paste ink is screen-printed and dried, and the same operation is again performed twice and then 420 times. The X-direction wiring (upper wiring) 26 was formed by baking at a temperature of around ℃ (see FIG. 6). X-direction wiring 26
Intersect with the Y-direction wiring 24 with the insulating layer 25 interposed therebetween, and are connected to the device electrode 22 at the contact hole 27 portion provided in the insulating layer 25.

The X-direction wiring 26 functions as a scanning electrode after being formed into a panel. The X-direction wiring 26 has a thickness of about 15 μm and a line width of about 300 μm.

(Formation of Lead-Out Wiring) Lead-out wirings 11 and 12 in both X and Y directions for connecting to an external drive circuit are formed by the same method as the above-mentioned X-direction wiring (upper wiring) 26 (see FIG. 1). ). The lead wires 11 and 12 have a larger line width and are 100 μm to 500 μm depending on the location.

As described above, in this embodiment, Y in the display area is
The directional wiring 24 is formed by a photolithography method using a photo paste, and the XY bidirectional wirings (lead-out wirings 11 and 12) outside the display area are also formed by a screen printing method. FIG.
As shown in FIG. 17A, the average angle formed with the substrate is an obtuse angle, and the cross section of the XY bidirectional wirings (lead-out wirings 11 and 12) outside the display region is an acute angle formed with the substrate as shown in FIG. 17A. A substrate having XY matrix wiring was formed.

(Formation of Conductive Film) Next, after thoroughly cleaning the substrate, the surface was treated with a solution containing a water repellent so that the surface became hydrophobic. This is because the aqueous solution for forming the conductive film, which is applied thereafter, is arranged on the device electrode with a proper spread. As the water repellent used, dimethyldiethoxysilane was sprayed on the substrate by a spray method, and dried at 120 ° C. with warm air.

After that, the conductive film 4 was formed between the device electrodes 2 and 3. This step will be described with reference to the schematic diagram of FIG. 7.
In order to compensate for the planar variations of the individual device electrodes on the substrate 21, pattern displacements are observed at several points on the substrate, and the displacement amount of the points between the observation points is linearly approximated to the position. By complementing the above, by applying the conductive film forming material, it is possible to eliminate the positional deviation of all the pixels and to apply it to the corresponding positions accurately.

In this example, for the purpose of obtaining a palladium film as the conductive film 4, 0.15% by weight of palladium-proline complex was first dissolved in an aqueous solution of water 85: isopropyl alcohol (IPA) 15 to prepare an organic palladium film. A containing solution was obtained. Besides this, some additives were added. A droplet of this solution was applied between the element electrodes by adjusting the dot diameter to 60 μm using an inkjet ejecting device using a piezo element as the droplet applying means 71 (FIG. 7).
(A)).

Thereafter, this substrate was placed in air at 350 ° C.
After heating and baking for 10 minutes, palladium oxide (Pd
A conductive film 4 ′ made of O) was formed (FIG. 7).
(B)). The dot diameter is about 60 μm and the maximum thickness is 1
A 0 nm film was obtained.

(Forming Step) Next, in this step called forming, the conductive film 4'is energized to cause cracks therein to form the electron emitting portion 5 (FIG. 7C). ).

As a specific method, a hood-like lid is covered so as to cover the entire substrate, leaving the lead-out wiring portion around the substrate 21, and a vacuum space is created inside the substrate 21.
Two-way wiring from the terminal of this lead wiring from the external power supply 2
By applying a voltage between the electrodes 4 and 26 and energizing the device electrodes 2 and 3, the conductive film 4 ′ is locally destroyed, deformed or altered to emit electrons in an electrically high resistance state. Form part 5. The hood-shaped lid and the substrate 21 are in contact with each other via a resin O-ring to form an airtight container.

At this time, if current is heated in a vacuum atmosphere containing a slight amount of hydrogen gas, the reduction is promoted by hydrogen and the conductive film 4'made of palladium oxide PdO forms palladium Pd.
To the conductive film 4.

At the time of this change, cracks (gaps) are partially generated due to the reduction contraction of the film, and the position where this crack is generated and its shape are greatly affected by the uniformity of the original film. In order to suppress variations in the characteristics of many elements, the cracks should be formed in the conductive film 4
It is most desirable that it occurs in the central part of and is as linear as possible.

Electrons are emitted from the vicinity of the crack formed by this forming under a predetermined voltage, but the generation efficiency is still very low under the current conditions.

The resistance value Rs of the obtained conductive film 4 is
It is a value of 10 ² to 10 ⁷ Ω.

In this embodiment, the forming process is performed as shown in FIG.
Using the pulse waveform as shown in (b), T1 is 0.1 m
sec and T2 were set to 50 msec. The applied voltage started from 0.1 V and was increased by about 0.1 V step every 5 seconds. The energization forming process was completed by measuring the current flowing through the element when a pulse voltage was applied to obtain the resistance value, and ending the forming process when the resistance was 1000 times or more the resistance before the forming process.

(Activation Step) As in the above-described forming, a hood-like lid is put on to form a vacuum space inside with the substrate 21, and a pulse voltage is applied from the outside through the bidirectional wirings 24, 26 to the device electrodes 2, 3. It is performed by repeatedly applying the voltage between them. Then, a gas containing carbon atoms is introduced, and carbon or a carbon compound derived therefrom is deposited as a carbon film in the vicinity of the crack.

In this example, trinitrile was used as the carbon source and introduced into the vacuum space through the slow leak valve to maintain 1.3 × 10 ^-4 Pa.

FIG. 11 shows a preferred example of voltage application used in the activation step. Maximum applied voltage value is 1
It is appropriately selected within the range of 0 to 20V.

In FIG. 11A, T1 is the positive and negative pulse width of the voltage waveform, T2 is the pulse interval, and the voltage values are set to have the same positive and negative absolute values. In addition, FIG.
In (b), T1 and T1 ′ are positive and negative pulse widths of the voltage waveform, T2 is a pulse interval, and T1>
The positive and negative absolute values of T1 'and the voltage value are set equal.

At this time, the voltage applied to the element electrode 3 is positive, and the element current If is from the element electrode 3 to the element electrode 2
The direction of flow to is positive. After about 60 minutes, when the emission current Ie reached almost saturation, the energization was stopped, the slow leak valve was closed, and the activation treatment was completed. In the forming and activation steps described above, the formation of the airtight container with the hood-shaped lid through the O-ring is sufficiently good, and the vacuum atmosphere during forming and the activation atmosphere (carbon atmosphere) during activation are sufficiently It was maintained.

Through the above steps, an electron source substrate in which a large number of electron-emitting devices are connected in matrix wiring on the substrate can be manufactured.

(Characteristic Evaluation of Electron Source Substrate) The electron emission characteristic of the electron source substrate manufactured by the above-mentioned element structure and manufacturing method was measured using the apparatus shown in FIG. As a result, when the emission current Ie at a voltage of 12 V applied between the device electrodes was measured, an average of 0.6 μA and an electron emission efficiency of 0.15% were obtained. In addition, the uniformity between the elements was good, and the variation in Ie between the elements was as good as 5%.

Next, an image forming apparatus (display panel) as shown in FIG. 12 was manufactured using the electron source substrate having the simple matrix arrangement manufactured as described above. Note that FIG. 12 is partially cut away to represent the inside.

In this embodiment, the electron source substrate 21 and the support frame 8
6 and the face plate 82 were adhered by frit glass, and baked by heating at 480 ° C. for 30 minutes to obtain an envelope 90.

By performing all of this series of steps in the vacuum chamber, the inside of the envelope 90 can be evacuated from the beginning, and the steps can be simplified.

In this way, a display panel as shown in FIG. 12 is manufactured, and a drive circuit composed of the scanning circuit, the control circuit, the modulation circuit, the DC voltage source, etc. of FIG. 14 is connected to the panel-shaped image display device. Was manufactured.

In the image display device manufactured as described above, electrons are emitted by applying a predetermined voltage in a time-division manner to each electron-emitting device through the X-direction terminal and the Y-direction terminal, and the anode electrode through the high-voltage terminal Hv. An image is displayed by applying a high voltage to the metal back 85, which accelerates the generated electron beam, and collides it with the fluorescent film 84.

In this embodiment, since the height of the Y-direction wiring 24 arranged substantially parallel to the line-shaped electron emitting portion 5 is sufficiently secured and the trajectory of emitted electrons can be controlled well, the luminous efficiency is high. Further, since the cross section of the XY bidirectional wirings (lead-out wirings 11 and 12) outside the display area is formed so that the average angle formed with the substrate is an acute angle, edge curl and side cracks occur in the bidirectional wiring outside the display area. As a result, an image forming apparatus having high vacuum reliability was obtained.

[Embodiment 2] In this embodiment, Y in the display area is
An electron source substrate similar to that of Example 1 except that the X / Y bidirectionally drawn wiring outside the display area was simultaneously formed when the directional wiring was formed, and the X / Y bidirectionally drawn wiring was further coated with an acrylic resin and simultaneously baked. Was produced. Only the wiring forming portion will be described below.

(Formation of Y-direction wiring) The Y-direction wiring (lower wiring) 24 is in a linear pattern so as to be in contact with one of the device electrodes 3 and to connect them by a photolithography method using a photopaste material. Formed by. Silver Ag photo paste ink DC-206 (Dupont)
(Manufactured by K.K.), screen-printed, dried, and then exposed and developed in a predetermined pattern. After this 480 ℃
The Y-direction wiring 24 is formed by baking at the temperature around (FIG. 4).
reference). The Y-direction wiring 24 has a thickness of about 15 μm and a line width of about 50 μm.

Simultaneously with the formation of the Y-direction wiring, the X-Y bidirectional lead wirings 11 and 12 shown in FIG. 1 were also formed. The line width of the X / Y bidirectionally drawn wirings 11 and 12 is 60 μm to 300 μm, although it varies depending on the location. However, after patterning the wiring, a photosensitive acrylic resin was used to partially coat the outside of the display area, and the wiring was baked at the same time.

(Formation of Insulating Layer) An insulating layer 25 is formed to insulate the upper and lower wirings. Electrical connection between the X-direction wiring (upper wiring) and the element electrode 2 is provided under the X-direction wiring (upper wiring) described later so as to cover the intersection with the previously formed Y-direction wiring (lower wiring) 24. In order to enable the above, a contact hole 27 was formed in the connection portion corresponding to each element (see FIG. 5).

Specifically, a photosensitive glass paste J1345 containing PbO as a main component (manufactured by Dupont) was screen printed, and then exposed and developed. This was repeated 4 times, and finally firing was performed at a temperature of around 480 ° C. The insulating layer 25 has a total thickness of about 30 μm and a width of 150 μm.
μm.

(Formation of X-direction wiring) Ag paste ink is screen-printed on the insulating layer 25 previously formed and then dried, and the same operation is again performed twice, and then 420 times. The X-direction wiring (upper wiring) 26 was formed by baking at a temperature of around ℃ (see FIG. 6). X-direction wiring 26
Intersect with the Y-direction wiring 24 with the insulating layer 25 interposed therebetween, and are connected to the device electrode 22 at the contact hole 27 portion provided in the insulating layer 25. The X-direction wiring 26 has a thickness of about 15 μm and a line width of about 300 μm.

In this embodiment, the Y-direction wiring 2 in the display area
4 and the XY bidirectional lead wirings 11 and 12 outside the display area are exposed and developed by a photolithography method using a photo paste to form a pattern, and then outside the display area, the photo paste (silver Ag photo paste ink DC-2
06) an overcoat layer (photosensitive acrylic resin) which is burned out at a temperature higher than the burning temperature of the organic component and a temperature lower than the softening point of the inorganic component is formed on the wiring pattern, and the wiring pattern and the overcoat layer are simultaneously formed. By firing, the cross section of the Y-direction wiring 24 in the display area has an obtuse average angle with the substrate as shown in FIG. 18A, and the cross section of the XY bidirectional wiring (lead-out wirings 11 and 12) outside the display area is As a whole, a substrate having XY matrix wiring having an acute average angle with the substrate was formed.

Also in the electron source substrate of this embodiment, as in the first embodiment, the improvement of the luminous efficiency is ensured and the improvement of the vacuum reliability of the electron source substrate element manufacturing process and the image forming apparatus using the same is realized. In addition to this, the lead-out wiring portion connected to the external drive circuit can be made high in density, and the outer shape with respect to the image display area can be made more compact.

[Embodiment 3] In this embodiment, as the first wiring, the X and Y direction lead wirings outside the display area are formed by the photolithography method using photo paste, and as the second wiring, outside the display area. The electron source is the same as in Example 1 except that a second-layer lead-out wiring is formed on the X- and Y-direction lead-out wiring (first wiring) by a screen printing method using a printing paste ink which is a non-photolitho paste. A substrate was produced. Only the wiring forming portion will be described below.

(Formation of Y-direction wiring) The Y-direction wiring (lower wiring) 24 is in a line pattern so as to be in contact with one of the device electrodes 3 and to connect them by a photolithography method using a photopaste material. Formed by. Silver Ag photo paste ink DC-206 (Dupont)
(Manufactured by K.K.), screen-printed, dried, and then exposed and developed in a predetermined pattern. After this 480 ℃
The Y-direction wiring 24 is formed by baking at the temperature around (FIG. 4).
reference). The Y-direction wiring 24 has a thickness of about 15 μm and a line width of about 50 μm.

Simultaneously with the formation of the Y-direction wiring, the Y-direction leading wiring 12 shown in FIG. 1 was also formed. The line width of the Y-direction lead wiring 12 is 100 μm or less, although it varies depending on the place.

(Formation of Insulating Layer) An insulating layer 25 is formed to insulate the upper and lower wirings. Electrical connection between the X-direction wiring (upper wiring) and the element electrode 2 is provided under the X-direction wiring (upper wiring) described later so as to cover the intersection with the previously formed Y-direction wiring (lower wiring) 24. In order to enable the above, a contact hole 27 was formed in the connection portion corresponding to each element (see FIG. 5).

Specifically, a photosensitive glass paste J1345 containing PbO as a main component (manufactured by Dupont) was screen printed, and then exposed and developed. This was repeated 4 times, and finally firing was performed at a temperature of around 480 ° C. The insulating layer 25 has a total thickness of about 30 μm and a width of 150 μm.
μm.

(Formation of X-Direction Wiring) The X-direction lead-out wiring 11 outside the display area shown in FIG. 1 was first formed by a photolithography method using a photopaste material. Silver Ag photopaste ink DC-206 (manufactured by Dupont) was used as a material, screen-printed, dried, and then exposed and developed in a predetermined pattern. After that, firing was performed at a temperature of around 480 ° C.

Then, Ag paste ink is screen-printed on the previously formed insulating layer 25 and the X-direction lead-out wiring 11 and then dried, and the same operation is performed again and twice applied. Therefore, it was fired at a temperature of around 420 ° C. Next, Ag paste ink was screen-printed on the Y-direction lead-out wiring, dried, and the same procedure was repeated to apply twice, and then the paste was baked at a temperature of about 420 ° C. The X-direction wiring 26 thus formed intersects the Y-direction wiring 24 with the insulating layer 25 in between, and is connected to the element electrode 22 at the contact hole 27 portion provided in the insulating layer 25.

The thickness of the X-direction wiring 26 in the display area is about 1
5 μm, X-direction extraction wiring 11 outside the display area is about 30 μm
m, and the line width is 100 μm or less.

In this embodiment, the cross section of the Y-direction wiring 24 in the display area forms an obtuse angle with the substrate as shown in FIG. 18A, and outside the display area, the X and direction lead-out wirings are formed. A substrate having XY matrix wiring whose cross-section with the substrate forms an acute angle with the substrate was formed.

Also in the electron source substrate of this embodiment, as in the first embodiment, while improving the luminous efficiency, the forming,
At the time of activation, the airtightness of the resin O-ring was sufficiently satisfied.

The preferred embodiments of the present invention have been described above. The present invention can be applied not only to the display device using the surface conduction electron-emitting device but also to the display device using various electron-emitting devices such as the FE type device and the MIM type device. Further, not limited to the electron beam excitation type display device using the electron emitting element,
It is applicable to a display device using an airtight container such as a PDP. For example, in the case of PDP, Japanese Patent Laid-Open No. 2001-2001
It is also possible to form the back panel by applying the above-mentioned embodiment to the address electrode and the lead-out portion described in Japanese Patent No. 189136, and form the front panel by applying the above-mentioned embodiment to the display electrode and the lead-out portion. It is also possible to do so. It should be understood that in the PDP, the frit glass of the sealing portion also serves as the frame member. Further, the panel type of the PDP is not limited to the surface discharge type as described in JP 2001-189136 A, but can be applied to the opposed discharge type, and the driving method can be either AC type or DC type. Is also applicable.

[0136]

As described above, according to the wiring board of the present invention, the cross-section of each wiring in the display area and outside the display area is ensured while the desired edge height of the wiring is secured in the display area. By controlling each shape,
It is possible to provide a wiring board for a display device, which can realize an airtight container in which the wiring resistance is reduced and the edge curl of the wiring and the side cracks of the board are not present outside the display area (sealing portion).

In the image forming apparatus using such a wiring substrate as the electron source substrate, it is possible to improve the luminous efficiency and to realize an image forming apparatus having high vacuum reliability, and to realize high quality due to a higher density pixel arrangement. Images can be obtained.

[Brief description of drawings]

FIG. 1 is a schematic plan view for explaining a wiring configuration of an electron source substrate of the present invention.

FIG. 2 is a plan view showing a basic configuration of a display area of an electron source substrate.

FIG. 3 is a diagram for explaining a manufacturing process of the electron source substrate of FIG.

FIG. 4 is a diagram for explaining a manufacturing process of the electron source substrate of FIG.

FIG. 5 is a diagram for explaining a manufacturing process of the electron source substrate of FIG.

6A and 6B are views for explaining a manufacturing process of the electron source substrate of FIG.

FIG. 7 is a diagram for explaining a manufacturing process of the electron source substrate of FIG.

FIG. 8 is a diagram showing an example of forming voltage.

FIG. 9 is a diagram schematically showing an apparatus for measuring characteristics of an electron-emitting device according to the present invention.

FIG. 10 is a diagram showing the device current of the surface conduction electron-emitting device according to the present invention and the relationship between the emission current and the device voltage.

FIG. 11 is a diagram showing an example of an activation voltage.

FIG. 12 is a perspective view schematically showing a configuration example of an image forming apparatus according to the present invention.

FIG. 13 is a diagram schematically showing an example of a fluorescent film in the image forming apparatus according to the present invention.

FIG. 14 is a drive circuit diagram of the image forming apparatus according to the present invention.

FIG. 15 is a schematic diagram showing a configuration example of a surface conduction electron-emitting device.

FIG. 16 is a schematic diagram showing formation of a leak path and its cause.

FIG. 17 is a schematic diagram for explaining an average angle formed by the cross-sectional shape of the wiring and the substrate.

FIG. 18 is a schematic diagram for explaining the average angle formed by the cross-sectional shape of the wiring and the substrate.

[Explanation of symbols]

1 substrate 2 element electrodes 3 element electrodes 4 Conductive film (element film) 5 Electron emission part 11 X direction drawing wiring 12 Y direction lead wiring 13 Vacuum container forming member (sealing member) 21 Substrate (electron source substrate) 24 Y direction wiring 25 insulating layer 26 X-direction wiring 27 contact holes 50 Ammeter for measuring device current If 51 Power supply for applying element voltage Vf to element 52 Ammeter for measuring emission current Ie 53 High voltage power supply for applying voltage to anode electrode 54 Anode electrode for trapping emission current Ie 55 Vacuum device 56 Exhaust pump 71 Droplet application means 82 face plate 83 glass substrate 84 Fluorescent film 85 metal back 86 Support frame 90 Enclosure (display panel) 91 black conductor 92 phosphor 101 display panel 102 scanning circuit 103 control circuit 104 shift register 105 line memory 106 Sync signal separation circuit 107 information signal generator 122 leak path 123 Insulation layer for forming vacuum container 124 mouse hole 125 frit seal (frit glass) 126 Side crack

Continued front page    (72) Inventor Kazuya Ishiwata             3-30-2 Shimomaruko, Ota-ku, Tokyo             Non non corporation F-term (reference) 5C012 AA05                 5C036 EE14 EE17 EF01 EF06 EF09                       EG12 EH01 EH06 EH08                 5C127 AA01 CC11 CC51 CC53 DD18                       EE20                 5C135 BB03 BB20 FF11 HH07 HH20

Claims (8)

[Claims] 1. An airtight container is formed by arranging a plurality of wiring electrodes on a substrate, and a counter substrate is arranged on the surface of the substrate having the wiring electrodes via a frame member, and an image forming member is formed in the airtight container. A wiring board for a display panel having:
The average angle formed by the cross section of the wiring in the orthogonal projection area of the image forming member on the wiring board and the wiring board is an obtuse angle, and the cross section of the wiring in the area where the frame member is arranged is the wiring board. A wiring board characterized in that the average angle formed with is an acute angle. 2. The wiring board according to claim 1, wherein the wiring has a thickness of 8 μm or more. 3. The wiring board according to claim 1, wherein the atmosphere inside the airtight container is a reduced pressure atmosphere. 4. The width of the wiring in an orthogonal projection area of the image forming member on the wiring board is smaller than the width of the wiring in an area in which the frame member is arranged. 4. The wiring board according to any one of 3 to 3. 5. An airtight container is formed by disposing a counter substrate having a plurality of wiring electrodes on a substrate and a frame member on the surface of the substrate having the wiring electrodes, and an image forming member is provided in the airtight container. A method of manufacturing a wiring board for a display panel, comprising: forming wiring in a photolithographic method using a photo paste in an orthogonal projection area of the image forming member onto the wiring board; and arranging the frame member. And a step of forming wiring in a region to be formed by pattern printing using a printing paste ink. 6. An airtight container is formed by arranging a plurality of wiring electrodes on a substrate and disposing a counter substrate on the surface of the substrate having the wiring electrodes via a frame member, and an image forming member is provided in the airtight container. A method of manufacturing a wiring board for a display panel, comprising: a wiring pattern by a photolithography method using a photo paste in an area where the image forming member is orthogonally projected onto the wiring board and the frame member is arranged. And a step of forming an overcoat layer on the wiring pattern in the region where the frame member is arranged, which burns out at a temperature higher than the burning temperature of the organic component in the photo paste and lower than the softening point of the inorganic component in the photo paste. And a step of simultaneously firing the wiring pattern and the overcoat layer. 7. An airtight container is formed by arranging a plurality of wiring electrodes on a substrate, and a counter substrate is arranged on the surface of the substrate having the wiring electrodes via a frame member, and an image forming member is formed in the airtight container. A method of manufacturing a wiring board for a display panel, comprising: a first photolithographic method using a photo paste in an area where the orthogonal projection area of the image forming member onto the wiring board and the frame member are arranged; And a step of forming a second wiring by pattern printing using a printing paste ink on the first wiring in a region where the frame member is arranged. Wiring board manufacturing method. 8. An image display device using the wiring board according to claim 1.