JP2003142498A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a reflective LCD device employing a pixel electrode exhibiting good light reflectivity and anti-fragile properties and a light shielding buried insulation layer. SOLUTION: Prior to a cell forming process, heat treatment equivalent to that employed in cell forming process is performed, the pixel electrode is imparted with anti-fragile properties by generating hillocks or whiskers, a light shielding interlayer insulation film is formed on the pixel electrode, hillocks or whiskers are removed by CMP represented by mechanical polishing and the surface of the pixel electrode is made flush with the surface of the light shielding interlayer insulation film.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an active matrix type liquid crystal display device (LCD), and more particularly to a method of manufacturing a semiconductor device for improving image quality of a display screen of an active matrix display device using thin film transistors.

[0002]

2. Description of the Related Art In an active matrix type liquid crystal display device, a thin film transistor (TFT) is arranged in each of a plurality of pixels arranged in a matrix, and electric charges entering and leaving each pixel electrode are controlled by a switching function of the TFT. Is.

The basic structure of an active matrix type liquid crystal display device is composed of two opposing substrates, one of which is called a TFT substrate having a pixel region and the other of which is called an opposing substrate. The TFT substrate is composed of a pixel area including several tens to millions of pixel switching TFTs (referred to as pixel TFTs) and a peripheral drive circuit area including a plurality of TFTs for driving the pixel switching TFTs.

An alignment film is formed on the TFT substrate and the counter substrate, and alignment treatment such as rubbing for adjusting the alignment of the liquid crystal material is performed. TFT just before forming the alignment film
The surfaces of the substrate and the counter substrate are preferably as flat as possible because they are related to the alignment of the liquid crystal.

Thereafter, in order to maintain the substrate distance between the TFT substrate and the counter substrate, spherical spacers are uniformly dispersed on either the TFT substrate or the counter substrate. Next, the two substrates are bonded together by a sealing material, and after being divided, a liquid crystal material is filled between the TFT substrate and the counter substrate, and the liquid crystal injection port is sealed with a sealing material.

The main heat treatments carried out in the above steps are: firing of the alignment film (holding at 180 ° C. for 1 hour, then slowly cooling to room temperature), hot pressing during substrate bonding (160 ° C. for 3 hours) After the temperature is maintained, the temperature is gradually lowered to 100 ° C. for 2 hours, and the temperature is gradually lowered to room temperature for 2 hours. ・ There is firing for holding the re-orientation treatment (holding at 120 ° C. for 30 minutes and then gradually cooling to room temperature). .

When a reflective LCD using a metal material for the pixel electrode is manufactured, the light reflectance of the electrode surface is lowered by the above heat treatment. There are various liquid crystal display modes in the reflective LCD. For example, in some cases, such as ECB (electric field control birefringence) mode, it is important to reflect the polarized component of light at the pixel electrode. Therefore, even a slight decrease in the light reflectance affects the polarization component of light and further adversely affects the display. As described above, in the reflective LCD, since the reflectance of the pixel electrode is important, there is a problem that the reflectance is lowered by the heat treatment. The reason why the light reflectance of the electrode surface is lowered will be described below.

When the pixel electrode is formed of aluminum, which is a material having a high reflectance and a low resistance, it is caused by the abnormal growth of aluminum on the electrode surface due to the heat treatment after the pixel electrode is formed or the heat treatment in the cell assembling process. Hillocks and whiskers occur. This is the main cause of the decrease in light reflectance due to the heat treatment.

Here, hillock is a phenomenon in which growth components of aluminum collide with each other to cause swelling. Whiskers are a phenomenon in which spiny growth occurs due to abnormal growth of aluminum. The growth distance of these hillocks and whiskers reaches several μm.

Therefore, an experiment was conducted to see how the reflectance of the aluminum alloy changes due to the heat treatment (heat treatment time = 1 hour). In the experiment, an Al-Ti (1%) film formed at room temperature by the sputtering method was used. The conditions during film formation are 3000 Pa under 0.4 Pa.
The power of w, T-S = 150 mm. The average value of the reflectance in the wavelength region of 400 nm to 800 nm obtained in this experiment is shown in FIG. 10 as the light reflectance bake temperature dependency of the Al—Ti (1%) film. Al-Ti (1
%) At the time of film formation (room temperature), the light reflectance is close to 88 to 90%, but as the heat treatment temperature (baking temperature) rises, hillocks and whiskers are generated on the electrode surface, so the light reflectance is high. It can be read from FIG.

Aluminum has a much higher reflectance in the visible light region than other metals or alloys (the reflectance of pure aluminum is 92 to 93%), and is suitable for use as a pixel electrode of a reflective LCD. . In pure aluminum, hillocks are generated by heat treatment at 100 ° C or higher.
Therefore, conventionally, a material that suppresses hillock generation is used by adding 0.5% or more, preferably 2% or more of titanium, scandium, or silicon to aluminum. As described above, when Ti or the like is contained in aluminum, hillocks are less likely to be generated, while the aluminum alloy has a problem that the reflectance is decreased by several percent and the resistance is increased as compared with pure aluminum.

As described above, conventionally, hillocks are generated on the surface of the pixel electrode due to the heat treatment process (protective film formation, cell assembly) after the pixel electrode made of aluminum is formed, and the light reflectance is reduced. It was

[0013]

Conventionally, when aluminum is used for the pixel electrode, hillocks or hillocks are formed on the light reflecting surface of the pixel electrode by a heat treatment process (protective film formation, cell assembly) after film formation of the pixel electrode. Whiskers were generated, causing a problem of a decrease in light reflectance.

[0014]

That is, according to the present invention, hillocks and whiskers generated by heat treatment after the pixel electrode is formed are removed by mechanical polishing typified by the CMP technique. It is intended to provide a method for manufacturing a reflective liquid crystal display device having a good image quality by forming a pixel electrode having a reflectance.

According to the present invention, a step of forming a plurality of electrodes on the interlayer insulating film, a step of heat-treating the plurality of electrodes to form protrusions on the surfaces of the plurality of electrodes, and the plurality of electrodes And a step of flattening by removing the projections on the surface of the semiconductor device.

According to another structure of the present invention, a substrate having a plurality of semiconductor elements formed in a matrix and a plurality of pixel electrodes connected to each of the plurality of semiconductor elements, and held on the substrate. A method of manufacturing a semiconductor device including at least a liquid crystal layer, the method comprising: forming a plurality of pixel electrodes on an interlayer insulating film; and heat-treating the plurality of pixel electrodes to form a surface of the plurality of pixel electrodes. And a step of removing the projections on the surfaces of the plurality of pixel electrodes to planarize the surface of the plurality of pixel electrodes.

The present invention will be described in detail below.
A step of forming a plurality of electrodes on the interlayer insulating film, a step of heat-treating the plurality of electrodes to form protrusions on the surfaces of the plurality of electrodes, and a second interlayer covering the plurality of electrodes. A semiconductor device comprising: a step of forming an insulating film; and a step of flattening the surfaces of the plurality of electrodes and the surface of the second interlayer insulating film so that both surfaces are flush with each other. The present invention provides a manufacturing method.

Further, the step of flattening is a step of removing protrusions on the surfaces of the plurality of electrodes and burying boundaries of the plurality of electrodes with the second interlayer insulating film. And a method for manufacturing a semiconductor device.

Another structure of the present invention is to form a plurality of electrodes on the first interlayer insulating film, to form a second interlayer insulating film covering the plurality of electrodes, and to form the plurality of electrodes. The surface of the electrode and the surface of the second interlayer insulating film are flattened so that both surfaces are flush with each other, the boundary portion of the plurality of electrodes is filled with the insulating film, and the plurality of electrodes are heat treated. And a step of forming protrusions on the surfaces of the plurality of electrodes, and a step of removing the protrusions on the surfaces of the plurality of pixel electrodes to planarize the semiconductor device. Is.

The heat treatment temperature and the treatment time of the electrode in the present invention are determined in consideration of the heat treatment temperature and the treatment time after the pixel electrode is formed. However, it goes without saying that the temperature may be in a range that does not affect the characteristics of the thin film transistor. The processing time at high temperature is the longest in hot pressing (3 hours at 160 ° C.) when bonding the substrates, and the maximum heating temperature is 180 ° C. (1 hour) when baking the alignment film. Further, it can be seen from FIG. 10 that the reflectance decreases as the temperature becomes higher, the reflectance becomes a constant value near 250 ° C., and the hillock generation stops at around 300 ° C.

Therefore, the heat treatment temperature and the treatment time of the electrode in the present invention can be maintained at 160 ° C. to 300 ° C. for 1 to 5 hours or more so as to sufficiently generate hillocks and whiskers. desirable.

The plurality of electrodes in the present invention are preferably made of a material containing aluminum as a main component.

Further, it is desirable that the step of removing the hillocks and whiskers and flattening the step in the present invention is performed by mechanical polishing.

The hillocks and whiskers generated by the above heat treatment are removed by mechanical polishing typified by the CMP technique to obtain a reflective liquid crystal display having a high reflectance and a flat pixel electrode and having a good image quality. The device can be obtained.

The maximum heating temperature after forming the pixel electrode is 18
By performing heat treatment at 0 ° C. (1 hour) to sufficiently generate hillocks and removing them by mechanical polishing, hillocks due to heat treatment are hardly generated at least after polishing the pixel electrode, and a decrease in reflectance can be prevented. .

Further, in the present invention, after heat treatment is carried out at a low temperature of 160 ° C. or less to generate hillocks, CM in order not to affect the characteristics of the thin film transistor as much as possible.
Even if hillocks are removed by mechanical polishing represented by P technology, a flat pixel electrode having a higher reflectance than in the conventional case can be obtained.

In addition, as another effect of the present invention, heat treatment is performed to form hillocks or whiskers, whereby the internal stress of the electrode film is relaxed, and the same effect as when the metal is annealed can be obtained. Annealing is to soften metals, alloys, and glass, or to heat-treat them for the purpose of imparting cold workability, and cooling to remove internal stress and make the material brittle. In order to fully exert this effect, it is desirable to heat-treat at a high temperature of 250 ° C. or higher to thoroughly generate hillocks. By doing so, the internal stress of the pixel electrode can be completely removed, and a pixel electrode having good brittleness resistance can be obtained.

As described above, according to the present invention, a pixel electrode having a high light reflectance and a high brittleness resistance can be obtained,
The reliability and image quality of the display screen could be improved.

[0029]

EXAMPLES Example 1 Hereinafter, examples of the present invention will be described, but it goes without saying that the present invention is not limited to these examples. In this embodiment, an example of steps for manufacturing a pixel matrix circuit of a reflective LCD using the present invention will be described with reference to FIGS. Since the present invention is a technique relating to the flattening of pixels, the TFT structure itself is not limited to this embodiment.

First, a silicon oxide film (not shown) is formed as a base film on a substrate 101 having an insulating surface, which is a glass substrate in this embodiment. Active layers 102 to 104 made of a crystalline silicon film are formed on the substrate 101. Although only three TFTs are described in this embodiment, in reality
More than 1,000,000 TFTs are formed in the pixel matrix circuit.

In this embodiment, the amorphous silicon film is thermally crystallized to obtain a crystalline silicon film. Then, the crystalline silicon film is patterned by a normal photolithography process to form the active layer 10
2 to 104 are obtained. In this example, a catalyst element (nickel) that promotes crystallization is added during crystallization.
This technique is described in detail in JP-A-7-130652.

Next, a silicon oxide film having a thickness of 150 nm is formed as a gate insulating film 105, and an aluminum film (not shown) containing 0.2 wt% of scandium is formed thereon and patterned. An island pattern, which is a prototype of the gate electrode, is formed.

First, anodic oxidation is performed in a 3% oxalic acid aqueous solution while leaving the resist mask used for patterning on the island pattern. At this time, a formation current of 2 to 3 mV is passed with the platinum electrode as the cathode, and the ultimate voltage is set to 8V. Thus, the porous anodic oxide films 106 to 108 are formed.
Is formed.

Then, after removing the resist mask, 3
Anodization is carried out in a solution in which an ethylene glycol solution of 1% tartaric acid is neutralized with aqueous ammonia. At this time, the formation current may be 5 to 6 mV, and the ultimate voltage may be 100V. Thus, the dense anodic oxide films 109 to 111 are formed.

Then, the gate electrode 11 is formed by the above process.
2-114 define. Incidentally, in the pixel matrix circuit, at the same time as the formation of the gate electrodes, the gate lines for connecting the respective gate electrodes are formed for each line. (Fig. 1 (A))

Next, the gate insulating film 105 is etched using the gate electrodes 112 to 114 as masks. The etching is performed by a dry etching method using CF4 gas. As a result, a gate insulating film having a shape shown by 115 to 117 is formed.

Then, in this state, impurity ions imparting one conductivity are added by an ion implantation method or a plasma doping method. In this case, if the pixel matrix circuit is composed of N-type TFTs, P (phosphorus) ions will be emitted from the P-type TF.
If it is composed of T, B (boron) ions may be added.

The step of adding the impurity ions is performed twice. The first time is performed with a high accelerating voltage of about 80 keV, and adjustment is performed so that the peaks of the impurity ions come under the ends (protrusions) of the gate insulating films 115 to 117. Then, the second time is performed with a low acceleration voltage of about 5 keV, and adjustment is performed so that impurity ions are not added below the ends (protrusions) of the gate insulating films 115 to 117.

Thus, the TFT source regions 118 to 12 are formed.
0, drain regions 121 to 123, low concentration impurity regions (also called LDD regions) 124 to 126, and channel forming regions 127 to 129 are formed. (Fig. 1 (B))

At this time, the source / drain regions are 300 to 50
Impurity ions are preferably added to the extent that a sheet resistance of 0 Ω / □ is obtained. Further, the low concentration impurity region is T
It is necessary to optimize according to the performance of FT. Also,
When the step of adding the impurity ions is completed, heat treatment is performed to activate the impurity ions.

Next, a silicon oxide film is formed to a thickness of 400 nm as an interlayer insulating layer 130, and the source electrodes 131 to 131 are formed on the silicon oxide film.
133, and drain electrodes 134 to 136 are formed. (Fig. 1 (C))

Next, a silicon oxide film is formed as the first interlayer insulating film 237 to a thickness of 0.5 to 1 μm. The first interlayer insulating film in this embodiment may be a laminated film of insulating films, and is not particularly limited as long as it is an insulating film or laminated film. Note that it is preferable to form a dense silicon oxide film by using a high-density plasma source or the like because flatness in CMP polishing later is improved. Alternatively, an organic resin film can be used as the first interlayer insulating film 237. As the organic resin film, polyimide, polyamide,
Polyimide amide, acrylic, etc. can be used.

Thus, the flat first interlayer insulating film 237 is formed.
To form. Further, a flattening process step may be performed.
(Fig. 2 (A))

Next, an aluminum film containing 1 wt% of titanium is formed to a thickness of 100 nm, and pixel electrodes 238 to 240 are formed by patterning. Of course, other metal materials may be used. (Fig. 2 (B))

Next, the pixel electrode is heat-treated. The heat treatment temperature and treatment time of the electrode are maintained at 180 ° C. for 1 hour while being heated to generate hillocks and whiskers. In this example, the temperature was kept at 180 ° C. for 1 hour,
1 hour or more at a temperature of 160 ° C to 300 ° C, preferably 1 to
There is no particular limitation as long as the heat treatment is performed for 5 hours. By this heat treatment, protrusions are sufficiently generated. Needless to say, when an organic resin film is used as the first interlayer insulating film, the temperature of this heat treatment is set to a temperature at which the resin film is altered or melted.

Thus, the state shown in FIG. 3A is obtained. As shown in the drawing, the heat treatment causes protrusions 350 to be formed on the surface of the pixel electrode. In order to remove these protrusions (hillocks and whiskers), a CMP polishing step is performed in a later step.

The pixel matrix circuit may be completed at the stage where the CMP polishing step is performed after the projections are formed by the above heat treatment. However, in this embodiment, after the insulating layers are laminated, the CMP polishing process is performed to fill the insulating layers in the gaps between the pixel electrodes 238 to 240.

A second interlayer insulating film 341 is formed so as to cover the pixel electrodes 238 to 240. The second interlayer insulating film in this embodiment may be a laminated film of insulating films,
It is not particularly limited as long as it is an insulating film or a laminated film. Alternatively, an organic resin film can be used as the second interlayer insulating film 341. As the organic resin film, polyimide, polyamide, polyimideamide, acrylic, or the like can be used. Note that when the pixel electrodes are formed so that the boundary portions are formed over the source wirings 231 to 233 as in this embodiment, the source wirings 231 to 233 function as a black mask, so that the insulating layer 341 has a light-transmitting property. It doesn't matter.

However, in order to secure a more reliable light-shielding function, as the second interlayer insulating film 341, a black pigment or an organic resin film in which carbon is dispersed (a solution coating type silicon oxide film such as PSG may be used). It is desirable to use an interlayer insulating film having a light-shielding property as described above. By doing so, a reliable light shielding function can be achieved even when the source wiring becomes thin or light from an oblique direction.

Further, by using a material having a relative dielectric constant as low as possible than the liquid crystal material used, formation of a lateral electric field between the pixel electrodes can be suppressed.

Thus, the state shown in FIG. 3B is obtained. After the state shown in FIG. 3B is obtained, a CMP polishing process is performed to form embedded insulating layers 342 to 344 embedded in the gaps between the pixel electrodes 238 to 240. At this time,
Surfaces of pixel electrodes 338 to 340 and embedded insulating layer 342
Since the surfaces of ~ 344 substantially coincide with each other, an excellent flat surface can be obtained. (FIG. 3 (C)) In this CMP polishing step, since the protrusions formed on the side surfaces of the electrodes cannot be removed, the heat treatment temperature is adjusted so that hillocks are generated to the extent that short circuits with adjacent electrodes do not occur. Is desirable.

Pixel electrodes are arranged in a matrix, and the gaps (boundaries) thereof are filled with embedded insulating layers 342 to 344. Therefore, although the embedded insulating layers 342 to 344 are labeled respectively, they are actually integrated in a matrix.

The pixel matrix circuit is completed as described above. In practice, a driving circuit for driving the pixel TFTs and the like are simultaneously formed on the same substrate. Such a substrate is usually a TFT
It is called a side substrate or an active matrix substrate. In this specification, the active matrix substrate is referred to as a first substrate.

When the first substrate is completed, the translucent substrate 44
A counter substrate having a counter electrode 446 formed on the substrate 5 (this substrate is referred to as a second substrate in this specification) is attached to the substrate 5, and a liquid crystal layer 447 is sandwiched therebetween. In this way, the reflection type LCD as shown in FIG. 4 is completed.

The cell assembling step may be performed according to a known method. It is also possible to disperse a dichroic dye in the liquid crystal layer or to provide a color filter on the counter substrate. The type of the liquid crystal layer, the presence / absence of the color filter, and the like vary depending on the mode in which the liquid crystal is driven, and may be appropriately determined by the operator.

[Embodiment 2] In the embodiment 1, since the heat treatment is performed after the pixel electrode is formed, the protrusion is formed on the side surface of the pixel electrode. However, in this embodiment, the protrusion is formed on the side surface of the electrode. The structure is such that objects are not easily formed.

The process of forming the pixel electrodes 238 to 240 is the same as that of the first embodiment.

Then, a second interlayer insulating film 241 is formed so as to cover the pixel electrodes 238 to 240. Second in this embodiment
The interlayer insulating film may be a laminated film of insulating films, and is not particularly limited as long as it is an insulating film or laminated film. Alternatively, an organic resin film can be used as the second interlayer insulating film 241. As the organic resin film, polyimide, polyamide, polyimideamide, acrylic, or the like can be used. When the pixel electrodes are formed so that the boundary portions are formed on the source wirings 231 to 233 as in this embodiment, the source wirings 231 to 233 function as a black mask, so that the second interlayer insulating film 24 is formed.
1 may be translucent.

However, in order to secure a more reliable light-shielding function, as the second interlayer insulating film 241, an organic resin film in which a black pigment or carbon is dispersed (a solution coating type silicon oxide film such as PSG may be used). It is desirable to use a second interlayer insulating film having a light shielding property as described above. By doing so, a reliable light shielding function can be achieved even when the source wiring becomes thin or light from an oblique direction.

Further, by using a material having a relative dielectric constant as low as possible than the liquid crystal material used, formation of a lateral electric field between the pixel electrodes can be suppressed.

Thus, the state shown in FIG. 5B is obtained. When the state shown in FIG. 5B is obtained, the first CMP
A polishing process is performed to form embedded insulating layers 342 to 344 embedded in the gaps between the pixel electrodes 238 to 240. At this time, since the surfaces of the pixel electrodes 338 to 340 and the surfaces of the embedded insulating layers 342 to 344 are substantially aligned with each other, an excellent flat surface can be obtained. (Fig. 6 (A))

The pixel electrodes are arranged in a matrix, and the gaps (boundaries) are filled with the buried insulating layers 342 to 344. Therefore, although the embedded insulating layers 242 to 244 are labeled respectively, they are actually integrated in a matrix.

Next, the pixel electrode is heat-treated. The heat treatment temperature of the electrode and its treatment time are 1 at a temperature of 180 ° C.
Hold for hours to generate hillocks and whiskers. Unlike the first embodiment, since the buried insulating layer is present, almost no protrusions are formed on the side surfaces of the electrodes, and a short circuit between electrodes does not occur even if the heat treatment temperature is high. In this example, the temperature was held at 180 ° C. for 1 hour, but it is not particularly limited as long as heat treatment is performed at a temperature of 160 ° C. to 300 ° C. for 1 hour, preferably 1 to 5 hours. By this heat treatment, protrusions are sufficiently generated. Needless to say, when an organic resin film is used as the first interlayer insulating film, the temperature of this heat treatment is set to a temperature at which the resin film is altered or melted.

Thus, the state shown in FIG. 6B is obtained. As shown in the drawing, the heat treatment causes protrusions 350 to be formed on the surface of the pixel electrode. A second CMP polishing step is performed to remove the protrusions (hillocks and whiskers). (FIG. 6C) After that, a structure in which a planarizing film or a protective film is further stacked may be used.

The pixel matrix circuit is completed as described above. In practice, a driving circuit for driving the pixel TFTs and the like are simultaneously formed on the same substrate. Such a substrate is usually a TFT
It is called a side substrate or an active matrix substrate. In this specification, the active matrix substrate is referred to as a first substrate.

When the first substrate is completed, the translucent substrate 44
A counter substrate having a counter electrode 446 formed on the substrate 5 (this substrate is referred to as a second substrate in this specification) is attached to the substrate 5, and a liquid crystal layer 447 is sandwiched therebetween. In this way, the reflection type LCD as shown in FIG. 7 is completed.

[Embodiment 3] In this embodiment, as a semiconductor element for performing active matrix driving, Embodiment 1
An example of using a TFT having a structure different from the TFT shown in will be described.

In the first embodiment, a typical top gate type TF is used.
Although the coplanar TFT which is T is described as an example,
It may be a bottom gate type TFT. FIG. 8 shows an inverted stagger type T which is a typical example of a bottom gate type TFT.
This is an example using FT.

In FIG. 8, 501 is a glass substrate, and 50 is
2, 503 are gate electrodes, 504 is a gate insulating film, 50
Reference numerals 5 and 506 are active layers. The active layers 505 and 506 are composed of silicon films to which impurities are not intentionally added.

507 and 508 are source electrodes, and 50
Reference numerals 9 and 510 are drain electrodes, and reference numerals 511 and 512 are silicon nitride films serving as channel stoppers (or etching stoppers). That is, of the active layers 505 and 506, the regions located under the channel stoppers 511 and 512 substantially function as the channel formation region.

The above is the basic structure of the inverted staggered TFT. In this embodiment, such an inverted stagger type is covered with an interlayer insulating film 513 made of an organic resin film to be flattened, and pixel electrodes 514 and 515 are formed thereon. Also,
The gaps between the pixel electrodes are filled with embedded insulating layers 516 and 517. Of course, the heat treatment of the present invention is performed to generate protrusions (hillocks and whiskers). afterwards,
The protrusion is removed and the pixel electrode is flattened.

[Embodiment 4] Next, as a semiconductor element of the present invention, an insulated gate field effect transistor (IGFE) is used.
An example of forming T) will be described. IG
FET is also called MOSFET, and refers to a transistor formed on a silicon wafer.

In FIG. 9, reference numeral 601 denotes a glass substrate, 60
Reference numerals 2, 603 are source regions, and 604, 605 are drain regions. The source / drain regions can be formed by adding impurities by ion implantation and thermally diffusing them. 60
Reference numeral 6 is an oxide for element isolation, which can be formed by using a normal LOCOS technique.

Next, 607 is a gate insulating film, and 608 and 6
Reference numeral 09 is a gate electrode, 610 is a first interlayer insulating film, 61
Reference numerals 1 and 612 are source electrodes, and reference numerals 613 and 614 are drain electrodes. A second interlayer insulating film 615 is flattened thereover, and pixel electrodes 616 and 617 are formed on the flattened surface. The gaps between the pixel electrodes are filled with buried insulating layers 618 and 619 using the present invention. Of course, the heat treatment of the present invention is performed to generate protrusions (hillocks and whiskers). Then, the protrusions are removed and the pixel electrode is flattened.

The present invention can be applied to an active matrix display using a thin film diode, a MIM element, a varistor element, etc. in addition to the IGFET, the top gate type or the bottom gate type TFT shown in this embodiment.

In particular, the reflective liquid crystal LCD has an advantage that the pixel area can be maximized by flattening the semiconductor element and forming the pixel electrode thereon. The present invention is an effective technique for more effectively utilizing its advantages. Therefore, the reflective LCD using the present invention can realize high resolution and high aperture ratio.

As described above, according to the present invention, a pixel electrode is formed, and heat treatment is performed at the maximum heating temperature in the heat treatment (cell assembling step, etc.) after the pixel electrode is polished to intentionally generate hillocks. By forming an interlayer insulating film on it, removing the protrusions by mechanical polishing, and flattening the interlayer insulating film and the pixel electrode, hillocks due to heat treatment (cell assembly process, etc.) after polishing the pixel electrode are eliminated. Occurrence can be prevented.

In addition, as another effect of the present invention, by heating the pixel electrode to form hillocks or whiskers, the internal stress of the electrode film is removed, and the same effect as when the metal is annealed (material Brittleness resistance) can be obtained.

As described above, according to the present invention, a pixel electrode having a high light reflectance and a high brittleness resistance can be obtained,
The reliability and image quality of the display screen can be improved.

[Brief description of drawings]

FIG. 1 is a diagram showing a manufacturing process of a reflective LCD.

FIG. 2 is a diagram showing a manufacturing process of a reflective LCD.

FIG. 3 is a diagram showing a manufacturing process of a reflective LCD.

FIG. 4 is a diagram showing a reflective LCD device.

FIG. 5 is a diagram showing a manufacturing process of a reflective LCD in Example 2.

FIG. 6 is a diagram showing a manufacturing process of a reflective LCD in Example 2.

FIG. 7 is a diagram showing a reflective LCD device according to a second embodiment.

FIG. 8 is a diagram showing a manufacturing process of a bottom gate type TFT.

FIG. 9 is a diagram showing a manufacturing process of an IGFET.

FIG. 10 is a graph showing the light reflectance bake temperature dependence.

[Explanation of symbols]

101 Substrate 102-104 Active layer 105 Gate insulating film 106-108 Porous anodic oxide film 109-111 Dense anodic oxide film 112-114 Gate electrode 115-117 Gate insulating film 118-120 Source regions 121-123 Drain Regions 124 to 126 LDD regions 127 to 129 Channel region 130 Interlayer insulating layers 131 to 133 Source electrodes 134 to 136 Drain electrodes 237 First interlayer insulating films 238 to 240 Pixel electrode 241 Second interlayer insulating film 341 Second interlayer insulating Films 342 to 344 Buried insulating layer 350 Protrusions (whiskers and hillocks) 445 Transparent substrate 446 Counter electrode 447 Liquid crystal layer 501 Glass substrate 502, 503 Gate electrode 504 Gate insulating film 505, 506 Active layer 507, 508 Source electrode 509, 510 drain charge Electrodes 511, 512 Channel stoppers (or etching stoppers) 513 Interlayer insulating films 514, 515 Pixel electrodes 516, 517 Embedded insulating layers 601 Glass substrates 602, 603 Source regions 604, 605 Drain regions 606 Oxide 607 gate insulating film for element isolation 608, 609 Gate electrode 610 First interlayer insulating films 611, 612 Source electrodes 613, 614 Drain electrode 615 Second interlayer insulating films 616, 617 Pixel electrodes 618, 619 Embedded insulating layers

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/3205 H01L 21/88 K 29/786 F term (reference) 2H091 FA14Y FA16Y FA35Y FB02 FB08 FB11 FC15 FC18 FC22 FC26 GA01 GA02 GA07 GA13 HA08 LA02 LA16 2H092 GA13 GA29 GA59 JA03 JA04 JA05 JA23 JA25 JA26 JB08 JB54 JB58 KA05 KA12 KA18 KB11 KB14 KB25 MA13 MA17 MA22 MA24 MA26 MA27 MA29 MA37 MA41 NA01 NA07 NA19 NA25 NA27 PAFH10J08A08 H10A10 HQA08 PA10HQ10A04 QQ08 QQ09 QQ11 QQ25 QQ48 QQ58 QQ65 QQ73 RR03 RR04 RR06 RR21 RR22 SS15 SS26 TT01 TT08 VV06 VV15 WW03 XX01 XX19 XX32 5F110 AA18NN02 HIJHJJ18EE13 HJJ13 EE03 HJ13 EE03 FF02 HI03J13 EE03 FF02 J13EE13 FF03 EE03 FF03 EE03 FF03 EE03 FF03 NN16 NN23 NN24 NN27 NN44 NN47 NN49 NN72 PP01 PP34 QQ19

Claims (7)

[Claims] 1. A plurality of electrodes are formed on a first interlayer insulating film, the plurality of electrodes are heat-treated to form protrusions on the surfaces of the plurality of electrodes, and light is shielded on the plurality of electrodes. Forming a second interlayer insulating film having properties, and planarizing so that the surfaces of the plurality of electrodes and the surface of the second interlayer insulating film form the same surface. . 2. A semiconductor device having a substrate having a plurality of semiconductor elements formed in a matrix and a plurality of pixel electrodes connected to each of the plurality of semiconductor elements, and a liquid crystal layer held on the substrate. A plurality of pixel electrodes are formed on the first interlayer insulating film, the plurality of pixel electrodes are heat-treated to form protrusions on the surfaces of the plurality of pixel electrodes, Forming a second interlayer insulating film having a light-shielding property on the plurality of pixel electrodes, and planarizing the surfaces of the plurality of pixel electrodes and the surface of the second interlayer insulating film to be the same surface. A method for manufacturing a characterized semiconductor device. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the second interlayer insulating film having a light shielding property is an organic resin film in which black pigment or carbon is dispersed. A method for manufacturing a semiconductor device, comprising: 4. The method for manufacturing a semiconductor device according to claim 1, wherein the second interlayer insulating film having a light shielding property is a PSG solution coating type silicon oxide film. Manufacturing method of semiconductor device. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the temperature of the heat treatment is in the range of 160 to 300 ° C. 6. The method for manufacturing a semiconductor device according to claim 1, wherein the plurality of electrodes are made of a material containing aluminum as a main component. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the planarization is performed by mechanical polishing.