JP2003142467A - Thin film forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film forming apparatus which can transfer a thin film to a substrate with excellent in-plane uniformity. SOLUTION: In a first plate 4, a plurality of protrusions 411 of cylindrical and trapezoidal shapes in thicknesses of about 50 μm are provided on an adsorption surface 41, and tops of the protrusions 411 are placed in contact with an upper surface as the whole of the substrate W to electrostatically hold the substrate W in a horizontal attitude. Moreover, under this holding condition, spaces SP are formed between the substrate W and the protrusion 412, and each space SP is communicated with a thin film forming chamber 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for forming a thin film on a substrate by transferring a thin film such as an insulating film formed on a sheet film to the substrate.

[0002]

2. Description of the Related Art In recent years, as a wafer used for manufacturing an LSI has a larger diameter and a liquid crystal panel has a larger area, a thin film forming method adapted to a large area has been required. Also, LSI
In the field of multi-layer wiring technology in manufacturing technology, it is necessary to flatten the surface of the insulating film with high accuracy in order to realize multi-layer wiring. The demand is also increasing. Therefore, in order to satisfy these requirements, a thin film forming technique for forming a thin film on a substrate by a pressure transfer method has been proposed.

As this thin film forming apparatus, for example, there is an apparatus described in Japanese Patent Laid-Open No. 10-189566. In this apparatus, a sample stage (corresponding to the substrate holding means of the present invention) containing a heater is provided in a thin film forming chamber formed inside a processing container, and a semiconductor wafer or a liquid crystal panel to be a thin film forming target is provided. Glass substrate for
It is possible to hold a "substrate". A transfer plate (corresponding to the film holding means of the present invention) is arranged below the sample table in the thin film forming chamber so as to face the sample table, and the thin film formed on the sheet film is placed on the substrate on the sample table. The sheet film is held while facing the sheet film. It should be noted that this transfer plate is also provided with a heater as with the sample table, so that the sheet film held on the transfer plate can be heated.

A vacuum pump is connected to the thin film forming chamber. The substrate is held by a sample table, the sheet film is held on a transfer plate, and the thin film forming chamber is sealed. Exhaust the formation chamber. Further, by evacuating and reducing the pressure in the thin film forming chamber with a vacuum pump, by moving the sample stage holding the substrate and the transfer plate holding the sheet film close to each other,
The substrate and the sheet film are pressed against each other to transfer the thin film on the sheet film to the substrate. Thus, when a thin film is formed on the substrate, the substrate and the sheet film are moved to their original positions, and then the thin film forming chamber is returned to atmospheric pressure, and the substrate on which the thin film is formed and the sheet film after the thin film transfer are performed. It is carried out from the processing container.

[0005]

By the way, in the conventional apparatus, since the inside of the thin film forming chamber is evacuated and decompressed, it is difficult to adopt the vacuum suction method as the method for holding the substrate on the sample stage, and the mechanical holding is performed. It was That is, an engaging member such as a claw member or a support pin is engaged with the peripheral portion of the substrate to hold the substrate on the sample table. Therefore, the following problems have occurred.

Prior to the transfer of a thin film by the thin film forming apparatus, various treatments (processes for forming an integrated circuit) are performed on the substrate. The substrate is distorted due to bending or the like. Then, by mechanically holding only the peripheral portion of the substrate as described above, the substrate is held on the sample stage in a distorted state, and is formed on the substrate by the thin film forming process. There is a problem that the in-plane uniformity of the thin film is reduced.

The present invention has been made in view of the above problems, and an object thereof is to provide a thin film forming apparatus capable of transferring a thin film onto a substrate with excellent in-plane uniformity.

[0008]

In order to achieve the above object, the present invention provides a substrate holding means for holding a substrate by electrostatic attraction, and a thin film formed on a sheet film to face the substrate holding means. By moving the film holding means for holding the sheet film in a state of facing to the substrate and at least one of the substrate holding means and the film holding means to press the substrate and the sheet film against each other to transfer the thin film to the substrate. And means.

In the invention thus constructed, since the substrate is held by the substrate holding means by electrostatic attraction, not only when the substrate on which the thin film is to be formed is not distorted, but also the substrate is distorted. Even if
The substrate is securely held along the substrate holding means to eliminate the distortion, and the substrate is always held by the substrate holding means without any distortion. Then, in this way, the thin film transfer to the substrate is performed without distortion, and the thin film is formed on the substrate with excellent in-plane uniformity.

Here, the shape and size of the attracting surface of the substrate holding means for electrostatically attracting the substrate is arbitrary, but it is particularly preferable to finish the attracting surface into an uneven shape. The reason is that if the suction surface is mirror-finished, the substrate and the suction surface will adhere to each other when the substrate is held, making it difficult to separate the substrate from the suction surface after transferring the thin film. By finishing the uneven shape, it is possible to securely hold the substrate along the substrate holding means and eliminate the distortion, while preventing the substrate from sticking to the suction surface and handling the substrate easily. It can be anything.

In this type of thin film forming apparatus, the transfer of the thin film to the substrate is often performed inside the processing container, that is, in the thin film forming chamber. In this case, the pressure in the thin film forming chamber and
In order to reduce the difference in atmospheric pressure between the concave portion and the substrate to facilitate the peeling of the substrate from the suction surface, it is desirable to communicate the concave portion of the suction surface with the thin film forming chamber, for example.

[0012]

1 is a diagram showing an embodiment of a thin film forming apparatus according to the present invention. This thin film forming apparatus has a processing container 1 whose inside is a thin film forming chamber 11 for transferring a thin film to a substrate as described later. An exhaust port 12 is provided at the bottom of the side surface of the processing container 1, and the thin film forming chamber 1 is provided in the exhaust port 12.
A pressure control unit 2 for adjusting the pressure of 1 is connected.

In this pressure control unit 2, a vacuum pump 22 is communicated with a thin film forming chamber 11 via a butterfly valve 21, and an operation from a control unit 3 for controlling the entire apparatus with the butterfly valve 21 open. When the vacuum pump 22 operates according to the signal, the inside of the thin film forming chamber 11 is exhausted and decompressed. Further, the pressure control unit 2 is provided with a valve controller 23 that controls the opening degree of the butterfly valve 21, and the valve controller 23 controls the butterfly valve 2 according to the opening degree signal from the control unit 3.
1 opening and closing, and by further adjusting the opening, the thin film forming chamber 1
It is possible to control the pressure (vacuum degree) in the thin film forming chamber 11 by adjusting the exhaust amount from 1. In this embodiment, in order to accurately control the pressure in the thin film forming chamber 11, a pressure gauge 31 for measuring the pressure in the thin film forming chamber 11 is provided, and the measurement result of the pressure gauge 31 is sent to the control unit 3. It is output and feedback control based on this measurement result is executed.

The peripheral edge of the upper surface of the processing container 1 is
An inlet 13 is provided, and a constant flow rate of nitrogen gas is supplied into the thin film forming chamber 11 through the inlet 13. That is, the introduction port 13 is connected to a nitrogen gas supply source (not shown) via the mass flow controller 14, and the mass flow controller 14 forms a thin film via the introduction port 13 based on the gas supply signal provided from the control unit 3. The inflow rate of nitrogen gas supplied to the chamber 11 is controlled. In this embodiment, nitrogen gas is supplied in order to favorably transfer the insulating film (thin film) to the substrate W described later, but the gas species supplied to the thin film forming chamber 11 is limited to this. However, a gas suitable for the transfer process may be supplied.

In this way, the thin film forming chamber 11 whose pressure is to be adjusted accommodates the first and second plates 4 and 5 facing each other vertically. Of these plates, in the first plate 4, the lower surface facing the second plate 5 is an adsorption surface 41 that electrostatically adsorbs the substrate W. The adsorption surface 41 electrostatically adsorbs the substrate W. It is configured to be held by the substrate and functions as the “substrate holding means” of the present invention. Here, as the substrate W on which the thin film is to be formed, there are, for example, a disc-shaped semiconductor wafer and a substrate having a structure in which Al wiring is patterned as electrode wiring on the semiconductor wafer. A case of transferring an insulating film (thin film) described later to the pattern formation surface side of the substrate W will be described.

FIG. 2 is a view of the first plate as seen from below. 3 and 4 are partially enlarged views of the first plate. As shown in these figures, the suction surface 41 of the first plate 4 is finished in an uneven shape. In this embodiment, a plurality of protrusions 411 each having a cylindrical trapezoidal shape and having a thickness of about 50 μm are provided on the entire suction surface 41, and the tops of these protrusions 411 contact the entire upper surface of the substrate W. The substrate W is electrostatically held in a horizontal posture (FIG. 4). Further, in this holding state, voids SP are formed between the substrate W and the recesses 412, and each void SP is in communication with the thin film forming chamber 11.

Further, as shown in FIG. 1, the first plate 4 has a built-in heater 42 as a heating means. The heater 42 is controlled by the heater controller 43 based on the substrate temperature signal given from the controller 3, and the heating is controlled between 25 ° C and 300 ° C. Then, the first plate 4 is suspended in the processing container 1 and is configured to be lifted and lowered by the weighting motor 71.

A plurality of lifters 44 are movable on the first plate 4 constructed as described above in parallel with the vertical direction,
Moreover, it is rotatably supported, and the claw member 45 is fixed to the lower end of each lifter 44 so that the peripheral edge of the substrate W can be supported. Therefore, when a lowering command is given from the control unit 3 to the lift drive unit (not shown),
As shown in (a), the lift drive moves the lifter 44 downward, moves the claw member 45 to the lower side of the suction surface 41, and then further rotates the lifter 44 to move the claw member 45 to the suction surface 41. The substrate W can be placed on the claw member 45 by being positioned so as to face the peripheral edge portion of the. In this specification, the position shown in FIG. 9A is referred to as a "substrate loading position".

When a lift command is given to the lift drive unit from the control unit 3, the lift drive unit moves the lifter 44 upward while keeping the claw member 45 facing the suction surface 41 to move the claw member 45 to the suction surface. Move to 41 side. Here, in this embodiment, in order to suppress the influence of thermal expansion of the substrate W as described later, it is possible to position the lifter 44 in two stages (proximity position and suction position). That is, the lifter 44 can be lifted by a predetermined amount to be positioned in a “proximity position” in which the substrate W supported by the claw member 45 is close to the first plate 4 so that the substrate W does not come into close contact with the first plate 4 (FIG. 11B). Further, the lifter 44 is further raised to raise the substrate W.
Can be positioned at the "suction position" in which they closely contact the first plate 4 (FIG. 4 (a)). Thus, when positioned at this suction position, the upper surface (non-pattern forming surface) of the substrate W supported by the claw member 45 is the suction surface 4
The first plate 4 starts the electrostatic adsorption operation in response to the signal from the control unit 3 by contacting the first convex portion 411, and thus the substrate W is firmly held on the first plate 4.

When electrostatic attraction of the substrate W is completed in this way,
An evacuation command is given from the control unit 3 to the lift drive unit, and the lift drive unit causes the lifter 44 to move about 90 degrees as shown in FIG. 4B.
After rotating the claw member 45 from the attraction surface 41 and the substrate W by rotating the claw member 45, the lifter 44 is further raised to move the claw member 4
5 is retracted to a position above the suction surface 41 to prevent the claw member 45 from interfering with each part of the apparatus in a transfer process described later. In addition, in this specification, the position shown in FIG. 7B is referred to as a "retracted position".

Further, the other plate, that is, the second plate 5, is arranged below the first plate 4 with its axis aligned, as shown in FIG. 1, and can hold the sheet film F on its upper surface. And functions as the "film holding means" of the present invention. That is, the second plate 5 includes the plate body 50 and the plate body 5
And a quartz stage 51 capable of holding the sheet film F on the upper surface side of 0. This sheet film F
Is formed in a circular shape larger than the substrate W, and an insulating film which is a thin film is formed on the surface. In this embodiment, a thermoplastic resin film is used as the sheet film F. As the thin film, a coating liquid for forming an insulating film made of an SOG material is used, and by applying this on the sheet film F, the insulating film is formed with a thickness of 1 μm or more. Also,
In this embodiment, in order to improve the handling property of the sheet film F, an integrated ring body RF is formed by using a pair of rings Rup and Rdw as shown in FIGS. 5 to 9, and in the state of the ring body RF. The sheet film F is being conveyed. Here, prior to further description of the configuration of the second plate 5, the handling configuration of the sheet film F will be described with reference to FIGS. 5 to 9.

FIG. 5 is an exploded perspective view of the ring body.
FIG. 6 is an assembled perspective view of the ring body, and FIG. 7 is A- of FIG.
8 is a sectional view taken along line A, FIG. 8 is a sectional view taken along line BB of FIG. 5, and FIG. 9 is a sectional view taken along line CC of FIG.

The ring body RF holds the sheet film F by sandwiching the sheet film F between the upper ring Rup and the lower ring Rdw. The upper ring Rup is an aluminum ring having an annular shape, and a magnetic material, for example, an iron plate 91 made of an iron-based or iron-alloy-based material is fitted in four places on the upper surface portion thereof. These iron plates 91 are electromagnetic attraction portions that are electromagnetically attracted by an electromagnet provided on the film hand (reference numeral 82 in FIG. 12) of the transport robot. Further, a plurality of permanent magnets 92 are provided on the upper ring Rup so as to avoid the iron plate 91.
Is provided to penetrate.

On the other hand, the lower ring Rdw is also an aluminum ring having the same shape as the upper ring Rup, and the upper ring Rup
At a position corresponding to the permanent magnet 92 provided on the
3 is provided through the lower ring Rdw. here,
The lower surface side magnetic pole of the permanent magnet 92 and the upper surface side magnetic pole of the permanent magnet 93 have polarities opposite to each other.
When the upper ring Rup and the lower ring Rdw are arranged with the sheet magnet F sandwiched therebetween, the permanent magnets 92 and 93 attract each other, and the sheet film F is held by the magnetic attraction while being sandwiched. Further, as described later, when the thin film formation using the sheet film F is completed, both the rings Rup and Rdw are directly overlapped with each other and are magnetically attracted and held to each other to form the ring pair Rup and Rdw without sandwiching the sheet film F. To be done.

As described above, in this embodiment, both permanent magnets 92 and 93 are provided so as to pass through the ring.
The through-hole arrangement itself is not an essential constituent requirement, and it is sufficient that both permanent magnets 92 and 93 can obtain a predetermined magnetic attraction force. Further, it goes without saying that a permanent magnet may be provided only on one of the upper ring Rup and the lower ring Rdw and a magnetic body may be arranged on the other, or an electromagnet may be used instead of the permanent magnet.

Further, the upper ring Rup and the lower ring Rdw
On the outer side surface of the notch, cut portions 94 and 9 are formed at the same position, respectively.
5 are provided. The notches 94 and 95 are ring bodies RF in a ring cassette (not shown) or other device.
It also serves to position pairs of rings. In addition,
Here, although the positioning portions are provided on both the upper ring Rup and the lower ring Rdw, it goes without saying that only one of them may be provided with the positioning portion.

Returning to FIG. 1, the description of the structure of the second plate 5 will be continued. An upper clamp 53 and a lower clamp 54, which hold the ring body RF by sandwiching the pair of rings Rup and Rdw from above and below, are provided on the peripheral portion of the second plate 5. Of these clamps, the lower clamp 54 is fixed to the plate body 50. Then, the other clamp, that is, the upper clamp 53 is movable in the vertical direction, and is moved upward at a timing to be described later to move the second clamp.
While the ring body RF can be carried in and out of the plate 5, the ring body RF is moved downward and the lower clamp 54 and the ring body RF.
Hold and fix.

In the vicinity of the upper clamp 53, a tension applying member 55 for applying a tension by pressing down the peripheral edge portion of the sheet film F is arranged, and the sheet film F is pressed downward to be tensioned at a timing described later. .

Further, inside the plate body 50,
The heater 56 is built in, and is controlled by the heater controller 57 based on the substrate temperature signal given from the controller 3, so that the sheet film F has a temperature of 25 ° C to 300 °.
Heated between C.

Further, the second plate 5 has a supporting plate 72.
Since the plurality of compression coil springs 73 are elastically supported and arranged above, the weighted pressure is made uniform when the substrate W and the sheet film F are pressed. Further, the support plate 72 is configured to be vertically movable by a support column 74 and moved up and down by a weighting motor 75. As described above, in this embodiment, the weighting motors 71 and 75 move the two plates 4 and 5 up and down in opposite directions to perform the thin film forming procedure (transfer process) described below. , 75
Functions as the "weighting means" of the present invention.

Next, a thin film forming procedure using the above thin film forming apparatus will be described. In this embodiment,
The substrate W is loaded on the first plate 4 side. That is,
The control unit 3 gives a lowering command to the lift drive unit, and then the control unit 3 shown in FIG.
As shown in, the claw member 45 is positioned at the substrate loading position. Subsequently, the substrate hand 81 of the transfer robot transfers the substrate W on which the thin film is to be formed into the thin film forming chamber 11 from the external device and places it on the claw member 45.
Then, when the substrate hand 81 of the transfer robot retracts from the thin film forming chamber 11, the control unit 3 gives a lift command to the lift driving unit to move the claw member 45 to the close position to move the upper surface (non-pattern) of the substrate W. The substrate W is positioned in such a state that the formation surface) is brought close to the first plate 4 so as not to be in close contact with the first plate 4 (FIG. 7B).

On the other hand, on the second plate 5 side, the ring body RF is transported by the film hand (not shown) of the transport robot, and the lower ring Rdw thereof is placed on the lower clamp 54. Then, when the film hand of the transfer robot retracts from the thin film forming chamber 11, the upper clamp 53 descends to the lower clamp 54 side, and the upper clamp 53 and the lower clamp 54 hold and fix the ring body RF (FIG. 10). At this time, as shown in the figure, the sheet film F is arranged above the second plate 5. Although illustration of the tension imparting member 55 is omitted in the figure, at this stage, the tension of the sheet film F by the tension imparting member 55 is not applied.

Subsequently, an opening signal for opening the butterfly valve 21 is output from the control unit 3 to the valve controller 23. In response to this signal, the valve controller 23 opens the butterfly valve 21 which is completely closed, and starts the exhaust pressure reduction of the thin film forming chamber 11 by the vacuum pump 22.

Then, the heater 42 is operated by the control signal from the heater controller 43 to heat the first plate 4, so that the substrate W is brought to a desired temperature in a state in which the first plate 4 and the first plate 4 are brought into close contact with each other without being brought into close contact with each other. To heat. That is, in this embodiment, the substrate W is heated by so-called proximity heating, and the substrate W is thermally expanded by the heat treatment, but the substrate W is only placed on the claw member 45. Therefore, it is possible to prevent unnecessary stress from being applied to the substrate W, and as a result, it is possible to suppress damage to elements and wirings formed on the substrate W.

In this way, when the thermal expansion of the substrate W progresses to such an extent that the stress is not a problem even if the heating process for the substrate W is completed or the temperature does not reach the predetermined temperature, the control unit 3 moves upward with respect to the lift drive unit. After further giving a command, the claw member 45 is moved to the suction position to bring the upper surface (non-pattern forming surface) of the substrate W into close contact with the first plate 4, and then the first plate 4 causes electrostatic suction. As a result, the substrate W is firmly attached to the first position as shown in FIG.
Held on plate 4. Subsequently, the control unit 3 gives an evacuation command to the lift drive unit, and the lift drive unit moves the pawl member 45 to the evacuation position to mount the substrate on the first plate 4, as shown in FIG. Complete.

On the side of the sheet film F, the heater 56 is operated by the control signal from the heater controller 57 to heat the second plate 5, and a signal is sent from the controller 3 to the weighting motor 75. The vertical movement of the plate 5 and the clamps 53 and 54 is started. Then, as shown in FIG. 11, the tension imparting member 55 presses the sheet film F relative to the second plate 5 so that the sheet film F is brought into close contact with the lower surface of the substrate W in a tensioned state.
The transfer of the insulating film to the substrate W is started. Then, with the thin film forming chamber 11 being exhausted and decompressed, the substrate W and the sheet film F are
Is pressurized with a predetermined weight for a certain period of time. In the meantime, the substrate W
The sheet film F is heated by a heater so as to reach a predetermined temperature.

When a series of weighting operations are completed and the transfer process is completed, the heater controllers 43 and 57 stop the heaters 42 and 56, respectively, and the heating of the first and second plates 4 and 5 is stopped. At the same time, the electrostatic adsorption by the first plate 4 is stopped. Further, a signal is sent from the control unit 3 to the weighting motors 71 and 75 so that the weighted state becomes zero, and the first and second plates 4 and 5 are returned to their original initial positions. As a result, the substrate W is placed on the sheet film F as shown in FIG.
The substrate W and the sheet film F are integrated. After the plates 4 and 5 have returned to their initial positions, the butterfly valve 21 is closed and the vacuum pump 22 is stopped.

Next, after waiting for the pressure in the thin film forming chamber 11 to return to the atmospheric pressure, the upper clamp 53 is raised to raise the ring body R.
Release the pinching of F. Then, the film hand 82 of the transfer robot is advanced to a position above the ring body RF, and the iron plate 91 of the upper ring Rup is electromagnetically attracted by the electromagnet of the hand 82 to integrally form the ring body RF and the substrate W into a thin film. It is taken out of the chamber 11 and conveyed to a device for peeling the sheet film F.

As described above, according to this embodiment, since the substrate W is held on the first plate 4 by electrostatic attraction, the substrate W on which the thin film is to be formed is distorted. Not only when the substrate W is not distorted, but also when the substrate W is distorted, the substrate W is reliably held along the suction surface 41 of the first plate 4 and the distortion can be eliminated. . As a result, the thin film can be transferred to the substrate W without any distortion, and the thin film can be formed on the substrate W with excellent in-plane uniformity.

Further, since the entire suction surface 41 is not finished to be a mirror surface but is formed into an uneven shape, it is possible to prevent the substrate W and the suction surface 41 from being brought into close contact with each other over the entire surface.
Can be easily peeled off from the first plate 4,
The handling of the substrate W can be facilitated.

Further, in this embodiment, the thin film forming chamber 11
However, since the space SP communicates with the thin film forming chamber 11 between the substrate W and the recess 412, the pressure inside the thin film forming chamber 11 and the air pressure between the space SP. The difference is reduced, and the peeling of the substrate W from the suction surface 41 becomes easier.

The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the convex portion 411 is finished in a cylindrical trapezoidal shape, but the shape of the convex portion 411 is not limited to this, and it can be finished in any shape. Further, the size of each convex portion 411 and the number of convex portions 411 are also arbitrary.

In the above embodiment, the pair of rings R
The sheet film F is sandwiched by up and Rdw to form a ring body RF, and the sheet film F is transported by being transported by a transport robot. However, the transport mode of the sheet film F is not limited to this. Instead, for example, the transport robot may directly hold and transport the sheet film F.

Further, although the present invention is applied to the thin film forming apparatus for forming a thin film on a semiconductor wafer or a glass substrate for a liquid crystal panel in the above-mentioned embodiment, the application target of the present invention is not limited to this. Not only when a thin film is formed on a substrate such as a photomask glass substrate, a plasma display glass substrate, an optical disc substrate, and a wiring substrate (for example, a printed circuit board), but also in the manufacture of IC cards and solar cell devices. It can be applied to any thin film forming apparatus for forming a thin film.

[0045]

As described above, according to the present invention, since the substrate is electrostatically attracted to the substrate holding means, the substrate is surely held along the substrate holding means to eliminate the distortion. It is possible to improve the in-plane uniformity of the thin film transferred to the substrate.

Further, when the suction surface is finished in a concavo-convex shape, the effect of securely holding the substrate along the substrate holding means and eliminating the distortion is achieved, and at the same time, the whole substrate is prevented from coming into close contact with the suction surface. When the electrostatic attraction is eliminated, the substrate can be easily peeled off from the attracting surface and the handling of the substrate can be facilitated.

Further, when the concave portion of the suction surface is communicated with the thin film forming chamber, the difference between the pressure inside the thin film forming chamber and the atmospheric pressure between the concave portion and the substrate becomes small, and the substrate is separated from the suction surface. Can be made easier, and as a result, the handling of the substrate can be made easier.

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of a thin film forming apparatus according to the present invention.

FIG. 2 is a view of the first plate as seen from below.

FIG. 3 is a partially enlarged view of the first plate.

FIG. 4 is a partially enlarged view of the first plate.

FIG. 5 is an exploded perspective view of a ring body.

FIG. 6 is an assembled perspective view of a ring body.

7 is a cross-sectional view taken along the line AA of FIG.

8 is a cross-sectional view taken along the line BB of FIG.

9 is a cross-sectional view taken along the line CC of FIG.

10 is a diagram showing an operation of the thin film forming apparatus of FIG.

11 is a diagram showing an operation of the thin film forming apparatus of FIG.

12 is a diagram showing an operation of the thin film forming apparatus of FIG.

[Explanation of symbols]

1 ... Processing container 4 ... First plate (substrate holding means) 5 ... Second plate (film holding means) 11 ... Thin film forming room 41 ... Adsorption surface 71, 75 ... Weighted motor 411 ... Convex portion (of suction surface 41) 412 ... Recessed portion (of suction surface 41) F ... Sheet film SP ... void W ... substrate

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor, Iseki             4 Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto City, Kyoto Prefecture             No. 1 at Tenjin Kitamachi             Manufacturing Co., Ltd. F term (reference) 2H088 FA18 FA30 HA01 HA04 MA20                 2H090 HC19 LA01                 4K029 AA25 BA03 BD02 GA05 JA01                 5F045 DP02 EB01 EK07 EM05 EM10

Claims (3)

[Claims] 1. A substrate holding means for holding a substrate by electrostatic attraction, and a film holding means arranged to face the substrate holding means and holding the sheet film with a thin film formed on the sheet film facing the substrate. And a weighting means for moving the at least one of the substrate holding means and the film holding means to press the substrate and the sheet film against each other to transfer the thin film to the substrate. Characteristic thin film forming apparatus. 2. The thin film forming apparatus according to claim 1, wherein the substrate holding means has an adsorption surface for electrostatically adsorbing the substrate, and the adsorption surface is finished in an uneven shape. 3. A thin film forming chamber is provided inside the thin film forming chamber, and at least one of the substrate holding unit and the film holding unit is moved in the thin film forming chamber to transfer the thin film to the substrate. The thin film forming apparatus according to claim 2, further comprising a processing container, wherein the concave portion of the suction surface is communicated with the thin film forming chamber.