JP2003133632A - Semiconductor laser module and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact semiconductor laser module having cooling capability and excellent durability. SOLUTION: In the semiconductor laser module where a Peltier module having a semiconductor laser element 1 and a Peltier element 8 for cooling the semiconductor laser element are accommodated in a package 11, an electric insulating layer 22, an ITO layer 23, and an electrode layer 24 for Peltier elements are successively formed on the inner surface of the package 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser (LD) module for optical communication incorporating a Peltier module and a method for manufacturing the same, and particularly to a semiconductor laser module having good temperature control characteristics and high durability, and a method for manufacturing the same. Regarding

[0002]

2. Description of the Related Art In recent years, an LD module for optical communication has inevitably increased the amount of heat generated with higher output, and it is necessary to control waste heat and temperature more efficiently than ever before. Therefore, the use of Peltier elements is increased. is doing. Especially, with the spread of optical wavelength division multiplexing transmission (WDM, DWDM, etc.), the temperature control of LDs has become precise, and the Peltier device is becoming an indispensable component.

FIG. 8 is a front view of a conventional semiconductor laser module, FIG. 9 is a perspective view of the semiconductor laser module, and FIG. 10 is a partial schematic diagram of the semiconductor laser module. In these figures, 1 is a semiconductor laser element, 2 is a solder, and 3 is a pedestal having a function of a heat sink. By using the material, the harmful effects due to thermal stress are eliminated.

Reference numeral 4 is a monitor light receiving element, 5 is a lens, 6 is a lens holder, and 8 is a Peltier element. Reference numeral 9 denotes a heat absorbing side insulating substrate, 10 denotes a heat radiating side insulating substrate, these insulating substrates 9 and 10 are generally made of alumina ceramic, and an electrode 14 (FIG. 1) which also serves to fix the Peltier element 8 on the surface thereof.
No. 0) is formed by a thin film method or a thick film method, and the Peltier device 8 is sandwiched and electrically fixed in series. Reference numeral 11 denotes a package body, which is provided with the external lens 7 and the airtight cover 12. Reference numeral 13 is a laser beam emitted from the semiconductor laser device 1, and reference numeral 15 is a lead wire connected to the electrode 14.

Of the insulating substrates 9 and 10 for fixing the wiring of the Peltier element 8, the heat absorbing side insulating substrate 9 fixes the pedestal 3 by soldering, and the heat radiating side insulating substrate 10 is fixed on the bottom surface of the package body 11 by soldering. The Peltier module mainly composed of the Peltier element 8 and the insulating substrates 9 and 10 is
The temperature of the semiconductor laser element 1 is controlled by absorbing heat from the semiconductor laser element 1 to ensure laser oscillation of a stable wavelength. Further, the heat of the Peltier module is dissipated to the outside through the package body 11 (see FIG. 9).

As described above, the electrodes 14 of the insulating substrates 9 and 10
The surface opposite to the surface on which is formed is surface-treated by plating or the like so that the solder 2 can be wetted in order to connect with other components (for example, the pedestal 3) and the package body 11. There is. For example, the wettability of the solder 2 is improved by plating the insulating substrates 9 and 10 with copper and then nickel and then gold.

[0007]

This semiconductor laser module is equipped with a Peltier module, and is particularly limited in the height direction, and the amount of heat to be processed increases corresponding to the high output of the semiconductor laser module. However, since the Peltier module also becomes large accordingly, there is a problem that it is difficult to reduce the size of the package. Further, since the insulating substrate made of ceramic has a large thermal resistance, the heat absorption performance of the Peltier module cannot be sufficiently exhibited.

Further, in the conventional structure, there is a height limitation because of the package side substrate (heat radiation side insulating substrate 10) of the Peltier device and the bottom plate of the package body 11. In order to solve this, the bottom plate of the package body is made of an insulating plate,
A technique for omitting the heat dissipation side insulating substrate of the Peltier device is disclosed in Japanese Patent Laid-Open No. 5-67844. However, this method has not been put to practical use because the thermal conductivity is not sufficient even if aluminum nitride is used as an insulator.

An object of the present invention is to solve the above-mentioned drawbacks of the prior art and to provide a semiconductor laser module which is small in size, has a good heat absorption performance, and is excellent in durability, and a method for manufacturing the same.

[0010]

At present, as a substrate for a Peltier element, aluminum nitride or the like is used in part, mainly alumina. In addition, a copper-tungsten alloy (hereinafter abbreviated as Cu / W) is often used in the package body in order to match the linear expansion coefficient with that of alumina. Therefore, if the alumina substrate can be changed to Cu / W, the material can be reduced or the bottom plate and the Peltier element can be integrated. However, since Cu / W is conductive, an electric insulating layer is required. Further, the properties required for this substrate include good thermal conductivity and adhesion strength with a metal layer (electrode of the Peltier device) formed by plating or the like on the top.

In the present invention, in a structure in which the bottom plate of a package having good thermal conductivity and the Peltier module substrate are integrated, a film of alumina or aluminum nitride is formed on the bottom plate by physical vapor deposition (PVD method) or chemical vapor deposition (PVD method). CV
By forming a thin film by the D method), it is possible to achieve both sufficient thermal conductivity and insulation.

However, the insulating film formed by this method has a new problem that it has poor adhesion to an electrode for connecting and fixing the Peltier device formed thereon and is poor in durability.

Therefore, according to the present invention of claim 1, in a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the same is housed in a package, an electrical insulating layer and an ITO layer are provided on an inner surface of the package. The Peltier element electrode layers are sequentially laminated.

According to a second aspect of the present invention, in a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the same is housed in a package, the heat radiation side substrate of the Peltier module is made of a metal plate, An electrical insulating layer, an ITO layer, and an electrode layer for a Peltier element are sequentially laminated on the Peltier element side of the heat radiation side substrate, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate. The heat radiation side substrate of the Peltier module is soldered to the inner surface of the package via the plating layer.

According to a third aspect of the present invention, in the semiconductor laser module according to the first or second aspect, the heat absorption side substrate of the Peltier module is made of a metal plate,
On the Peltier element side of the heat absorption side substrate, an electric insulating layer, ITO
Layer and a Peltier element electrode layer are sequentially laminated, and a plating layer for improving solder wettability is formed on the semiconductor laser element side of the heat absorption side substrate.

According to a fourth aspect of the present invention, in the semiconductor laser module according to any one of the first to third aspects, the heat radiation side substrate and / or the heat absorption side substrate of the Peltier module is at least the Peltier of the package. It is characterized in that the module is made of the same material as the part to be soldered.

According to a fifth aspect of the present invention, in the semiconductor laser module according to the fourth aspect, the same material is C
u / W.

The present invention according to claim 6 is characterized in that the semiconductor laser module according to any one of claims 1 to 5 is a semiconductor laser module for optical communication of optical wavelength division multiplexing transmission. is there.

According to a seventh aspect of the present invention, in a method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, an electrically insulating layer is formed on an inner surface of the package. When the ITO layer and the Peltier element electrode layer are sequentially laminated, the electrically insulating layer is formed by a physical vapor deposition method or a chemical vapor deposition method.

According to an eighth aspect of the present invention, in a method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, the heat radiation side substrate of the Peltier module is a metal plate. An electric insulating layer, an ITO layer, and a Peltier element electrode layer are sequentially laminated on the Peltier element side of the heat radiation side substrate, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate. Then, when the heat radiation side substrate of the Peltier module is soldered to the inner surface of the package through the plated layer, the electrical insulating layer is formed by a physical vapor deposition method or a chemical vapor deposition method.

According to a ninth aspect of the present invention, in the method of manufacturing a semiconductor laser module according to the seventh or eighth aspect, the heat absorption side substrate of the Peltier module is made of a metal plate, and the heat absorption side substrate of the Peltier element side. When an electrically insulating layer, an ITO layer, and an electrode layer for a Peltier element are sequentially laminated on the above, and a plating layer for improving solder wettability is formed on the semiconductor laser element side of the heat absorption side substrate, the electrical insulating layer is physically vapor deposited. Method or a chemical vapor deposition method.

According to a tenth aspect of the present invention, in a method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, an electrically insulating layer is provided on an inner surface of the package. When the ITO layer and the Peltier element electrode layer are sequentially laminated, the ITO layer and the Peltier element electrode layer are formed into a film and then patterned into a predetermined shape by etching. .

According to an eleventh aspect of the present invention, in a method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, the heat radiation side substrate of the Peltier module is a metal plate. An electric insulating layer, an ITO layer, and a Peltier element electrode layer are sequentially laminated on the Peltier element side of the heat radiation side substrate, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate. Then, when the heat dissipation side substrate of the Peltier module is soldered to the inner surface of the package through the plating layer, the ITO layer and the Peltier element electrode layer are once film-formed and then patterned into a predetermined shape by etching. It is characterized by being trained.

According to a twelfth aspect of the present invention, in the method of manufacturing a semiconductor laser module according to the seventh or eighth aspect, the heat absorption side substrate of the Peltier module is made of a metal plate, and the heat absorption side substrate of the Peltier element side. When an electrically insulating layer, an ITO layer, and an electrode layer for a Peltier element are sequentially laminated on the above, and a plating layer for improving the wettability of solder is formed on the semiconductor laser element side of the heat absorption side substrate, the ITO layer and the Peltier element are used. The electrode layer is characterized by being formed into a film once and then patterned into a predetermined shape by etching.

According to a thirteenth aspect of the present invention, in a method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, an electrical insulating layer is provided on an inner surface of the package. When the ITO layer and the Peltier device electrode layer are sequentially laminated, the ITO layer and the Peltier device electrode layer are formed into a predetermined pattern by vapor deposition or sputtering.

According to a fourteenth aspect of the present invention, in a method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, the heat radiation side substrate of the Peltier module is a metal plate. An electric insulating layer, an ITO layer, and a Peltier element electrode layer are sequentially laminated on the Peltier element side of the heat radiation side substrate, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate. Then, when the heat radiation side substrate of the Peltier module is soldered to the inner surface of the package through the plated layer, the ITO layer and the Peltier element electrode layer are formed into a predetermined pattern by vapor deposition or sputtering. It is a feature.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor laser module according to the seventh or eighth aspect, the heat absorption side substrate of the Peltier module is made of a metal plate, and the heat absorption side substrate of the Peltier element side. When an electrically insulating layer, an ITO layer, and an electrode layer for a Peltier element are sequentially laminated on the above, and a plating layer for improving the wettability of solder is formed on the semiconductor laser element side of the heat absorption side substrate, the ITO layer and the Peltier element are used. The electrode layer is characterized by being formed into a predetermined pattern by vapor deposition or sputtering.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an enlarged sectional view showing a state before etching in the vicinity of a bottom plate of a package body according to the first embodiment of the present invention, and FIG. 2 is an enlarged sectional view showing a state after etching similarly.

In the semiconductor laser module of the present invention, an electrical insulating layer (alumina ion plating layer) 22, an ITO layer 23, an electrode layer (Ni-Cu-Ni-) are formed on a bottom plate (Cu / W) 21 of the package body. Au plating layer) 24
Are sequentially laminated.

A detailed description will be given below. The bottom plate 21 is W
It is made of a material having good heat conductivity such as a Cu / W plate having a content of 75 to 95% by weight, and has a quadrangular planar shape. This Cu / W ensures heat conduction, and the electric insulation layer 2
It is prized because it has a similar coefficient of thermal expansion to alumina, which is 2. The thermal conductivity of Cu / W is 180-200W /
m · K, the coefficient of thermal expansion is 6.6 to 7.3 × 10 ⁻⁶ / ° C., and the coefficient of thermal expansion of alumina is 7.2 × 10 ⁻⁶ / ° C.

Since the Cu / W plate is electrically conductive, it is necessary to apply alumina ion plating to the upper part thereof. This insulating material may be another insulating material such as aluminum nitride or synthetic resin, and may also be sputtered or other P
The film may be formed by using the VD method or the CVD method.

As described above, the bottom plate 21 of Cu / W or the like provided with the electrically insulating layer 22 is a bottom plate of the package body and has a function as a substrate of the Peltier module, and the Peltier element 8 is provided thereon. The electrode layer 24 for fixing is formed by a plating method or a PVD method. The adhesion of the electrode layer 24 is a major factor in determining the durability of the Peltier module, and the electric insulating layer 2 as in the present invention.
It was difficult to secure the adhesiveness when the electrode layer 24 was formed on top of No. 2.

As a result of various investigations by the present inventors, I
It has been found that when the electrode layer 24 is formed via the TO layer 23, very high adhesion can be obtained. In addition, since the ITO layer 23 has electrical conductivity, as shown in FIG. 1 as a method of manufacturing the ITO layer 23 and the electrode layer 24, the ITO layer 23 and the electrode layer 24 are both etched and then etched by a film shape. Patterned. This method is industrially effective because of its high production efficiency.

Specific examples of the present invention will be described below. First, C
Plate thickness 2 made of u / W plate (W content of 75 to 95% by weight)
An electrically insulating layer 22 (having a thickness of 5 μm or less) made of alumina is formed on the bottom plate 21 having a thickness of not more than mm by an ion plating method. Next, an ITO layer 23 (having a film thickness of 2 μm or less) is formed on the electric insulating layer 22 by an ion plating method, and further, an electrode layer 24 (having a film thickness of 5) made of a Ni—Cu—Ni—Au layer is formed on the ITO layer 23 by a plating method. ˜100 μm) was formed (see FIG. 1). Then, the ITO layer 23 and the electrode layer 24 were patterned into an electrode shape by etching using, for example, a chloride-based etching solution (see FIG. 2). In addition, IT
When the conductivity of the O layer 23 is considerably lower than that of the electrode layer 24, the ITO layer 23 does not necessarily have to be patterned, and only the electrode layer 24 may be patterned while remaining in a film shape.

Then, as shown in FIG. 3, the Peltier element 8, the electrode 14, and the heat absorption side electrode 9 are mounted on the electrode layer 24 to form a Peltier module, and a pedestal with the semiconductor laser 1 is mounted on the Peltier module. 3, a predetermined component such as the monitor light receiving element 4 and the lens holder 6 is mounted to form a semiconductor laser module. In FIG. 3, in order to simplify the drawing, the bottom plate 21 and the electrically insulating layer 22 are separated by 1
The layers, the ITO layer 23 and the electrode layer 24 are drawn as one layer. Although not shown, the bottom plate 21 is made of Cu / W.
A square tube having an opening area substantially equal to the area of the above is externally fitted to the bottom plate 21, and the square tube and the bottom plate 21 are soldered to form a package body.

When a conventional Peltier module using alumina as a substrate is used as a comparative example, the heat absorption performance of the Peltier module of the present invention is improved by 9% as compared with the comparative example. The electrode adhesive strength was 1.7 kg / mm ² , which was 5% higher than that of the comparative example. The electrode adhesive strength when the ITO layer 23 was not formed was 0.4 kg / mm ² , and the interposition of the ITO layer 23 increased the electrode adhesive strength by about 4.3 times.

FIG. 4 is a partial schematic configuration diagram of a semiconductor laser module according to the second embodiment, and FIG. 5 is an enlarged sectional view of a heat radiation side substrate used in the semiconductor laser module.
This embodiment is different from the first embodiment shown in FIG. 3 in that a Cu / W plate (W content of 75 to 75) is used as the heat dissipation side substrate 25.
95% by weight, and uses this as the bottom plate 21 of the package
It is the point fixed with solder 2 on top.

As shown in FIG. 5, the electric insulating layer 22 and the ITO layer 2 are formed on one surface of the heat radiation side substrate 25 made of a Cu / W plate.
3 and the electrode layer 24 are sequentially laminated, and the manufacturing method thereof is the same as the method described in FIGS. 1 and 2. Heat dissipation side substrate 2
A Cu—Ni—Au plating layer 26 is formed on the other surface of the No. 5 in order to improve the wettability with the solder 2. Although not shown, an Au plating layer is formed on the upper surface of the bottom plate 21 to improve the wettability with the solder 2, and the heat radiation side substrate 25 is fixed to the bottom plate 21 by the solder 2.

FIG. 6 is a partial schematic diagram of the semiconductor laser module according to the third embodiment. This embodiment differs from the second embodiment shown in FIG. 4 in that the heat absorption side substrate 27 is
The point is that a Cu / W plate is used as. This heat absorption side substrate 2
Similarly to the heat dissipation side substrate 25 shown in FIG. 5, 7 also has an electric insulating layer 22, an ITO layer 23, and an electrode layer 24 sequentially stacked on one surface, and has good wettability with the solder 2 on the other surface. A Cu-Ni-Au plated layer 26 is formed on the.

FIG. 7 is a partial schematic diagram of the semiconductor laser module according to the fourth embodiment. This embodiment is different from the first embodiment shown in FIG. 3 in that the heat absorption side substrate 27 is
The point is that a Cu / W plate is used as. This heat absorption side substrate 2
Similarly to the heat dissipation side substrate 25 shown in FIG. 5, 7 also has an electric insulating layer 22, an ITO layer 23, and an electrode layer 24 sequentially stacked on one surface, and has good wettability with the solder 2 on the other surface. A Cu-Ni-Au plated layer 26 is formed on the.

In each of the above-described embodiments, the case where the semiconductor chips are arranged in one layer as the Peltier device has been described, but the present invention is not limited to this, and a Peltier module using a cascade structure having a plurality of semiconductor chips is provided. Is also applicable. At this time, Cu /
An electric insulating layer, an ITO layer, and an electrode layer can be formed on both surfaces of the W plate.

In each of the above-described embodiments, the ITO layer and the electrode layer are once formed into a film and then patterned into a predetermined shape by etching. However, the present invention is not limited to this, and the ITO layer and the electrode layer are formed. The electrode layer can be sequentially formed into a predetermined shape by a vapor deposition method such as a PVD method or a CVD method or a sputtering method using a patterned mask, and this has an advantage that the number of steps is small.

Although the Peltier module is soldered to the bottom plate of the package in each of the above-described embodiments, the present invention is not limited to this. For example, the Peltier module is soldered to a portion other than the bottom plate such as a side wall of the package or a partition wall in the package. It is also possible to do so.

[0044]

According to the present invention as set forth in claim 1, it is possible to provide a semiconductor laser module in which the heat dissipation side insulating substrate of the Peltier module can be omitted, the size is small, the cooling capacity is excellent, and the durability is high. .

According to the present invention as set forth in claim 2, since the heat dissipation side insulating substrate made of ceramic is not used, it is possible to provide a semiconductor laser module having an excellent cooling capacity and a high durability.

According to the third aspect of the present invention, since the heat absorbing side insulating substrate made of ceramic is not used, it is possible to provide a semiconductor laser module having excellent cooling ability and high durability.

According to the present invention described in claims 4 and 5, the adverse effect of thermal stress on the Peltier device can be eliminated, and a semiconductor laser module having high durability can be provided.

According to the present invention described in claim 6, it is possible to provide a semiconductor laser module in which laser oscillation of a stable wavelength is guaranteed.

According to the present invention described in claims 7 to 10, the semiconductor laser module having excellent cooling capacity and excellent durability can be manufactured with high productivity.

[Brief description of drawings]

FIG. 1 is an enlarged cross-sectional view showing a state before etching in the vicinity of a bottom plate of a semiconductor laser module according to a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view showing a state after etching near the bottom plate.

FIG. 3 is a partial schematic configuration diagram of the semiconductor laser module according to the first embodiment.

FIG. 4 is a partial schematic configuration diagram of a semiconductor laser module according to a second embodiment.

FIG. 5 is an enlarged cross-sectional view of the vicinity of a heat dissipation side substrate used in the embodiment.

FIG. 6 is a partial schematic configuration diagram of a semiconductor laser module according to a third embodiment.

FIG. 7 is a partial schematic configuration diagram of a semiconductor laser module according to a fourth embodiment.

FIG. 8 is a front view of a conventional semiconductor laser module.

FIG. 9 is a perspective view showing the semiconductor laser module.

FIG. 10 is a partial schematic configuration diagram of the semiconductor laser module.

[Explanation of symbols]

1 Semiconductor laser device 3 pedestals 4 Monitor light receiving element 5 lenses 6 lens holder 7 External lens 8 Peltier element 9,10 insulating substrate 11 Package body 12 Airtight cover 13 laser light 14 electrodes 15 lead wire 21 Bottom plate 22 Electrical insulation layer 23 ITO layer 24 electrode layers 25 Heat dissipation side substrate 26 Cu-Ni-Au plating 27 Heat absorption side substrate

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 35/34 H01L 35/34 (72) Inventor Fumio Kuno 36-1 Nihonbashi Hakozakicho, Chuo-ku, Tokyo Riva -Side Yomiuri Heights S803 Room in Eco Twenty One Co., Ltd. (72) Inventor Mr. Hiroshi Nishiike 36-1 Nihonbashi Hakozakicho, Chuo-ku, Tokyo Riverside Yomiuri Heights S80 Room In Eco-Twenty One Co., Ltd. (72) Invention Fumikazu Kitani 36-1 Nihonbashi Hakozakicho, Chuo-ku, Tokyo Liverside Yomiuri Heights S803 Room Inside Eco Twenty One Co., Ltd. (72) Tsuyoshi Higashimatsu 36-1 Nihonbashi Hakozakicho, Chuo-ku, Tokyo Liverside Yomiuri Heights S803 Room (72) from Eco Twenty One Co., Ltd. Akio Imai 5-1-1-19 Koshigaya, Koshigaya-shi, Saitama Prefecture Yoshino Denka Kogyo Co., Ltd. (72) Inventor, Kanji Kawakubo 5-1-1-19 Koshigaya, Koshigaya-shi, Saitama Prefecture F, Yoshino Denka Kogyo Co., Ltd. Term (reference) 5F036 AA01 BA33 BC06 5F073 FA25 FA30

Claims (15)

[Claims] 1. A semiconductor laser module in which a Peltier module having a semiconductor laser device and a Peltier device for cooling the semiconductor laser device is housed in a package, wherein an electrical insulating layer, an ITO layer, and a Peltier device electrode layer are sequentially formed on the inner surface of the package. A semiconductor laser module, which is formed by stacking layers. 2. A semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, wherein the heat radiation side substrate of the Peltier module is made of a metal plate, and the Peltier element of the heat radiation side substrate is used. Electrical insulation layer on the side, I
A TO layer and a Peltier element electrode layer are sequentially laminated, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate, and the heat radiation side substrate of the Peltier module is packaged through the plating layer. A semiconductor laser module characterized by being soldered to the inner surface of the. 3. The semiconductor laser module according to claim 1, wherein the heat absorption side substrate of the Peltier module is made of a metal plate, and the Peltier element side of the heat absorption side substrate has an electric insulating layer, an ITO layer, and a Peltier element. 2. A semiconductor laser module, wherein electrode layers for use are sequentially formed and a plating layer for improving the wettability of solder is formed on the semiconductor laser element side of the heat absorption side substrate. 4. The semiconductor laser module according to claim 1, wherein the heat radiation side substrate and / or the heat absorption side substrate of the Peltier module is a portion to which at least the Peltier module of the package is soldered. A semiconductor laser module characterized by being made of the same material as. 5. The semiconductor laser module according to claim 4, wherein the same material is a copper-tungsten alloy. 6. A semiconductor laser module according to claim 1, wherein the semiconductor laser module is a semiconductor laser module for optical communication of optical wavelength division multiplexing transmission. 7. A method for manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the same is housed in a package, wherein an electrically insulating layer, an ITO layer, and a Peltier element electrode are provided on an inner surface of the package. A method for manufacturing a semiconductor laser module, wherein the electrical insulating layer is formed by a physical vapor deposition method or a chemical vapor deposition method when the layers are sequentially laminated. 8. A method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, wherein the heat radiation side substrate of the Peltier module is made of a metal plate, and the heat radiation side substrate. Electrical insulation layer on the Peltier element side of
A TO layer and a Peltier element electrode layer are sequentially laminated, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate, and the heat radiation side substrate of the Peltier module is packaged through the plating layer. A method for manufacturing a semiconductor laser module, wherein the electrically insulating layer is formed by physical vapor deposition or chemical vapor deposition when soldered to the inner surface of. 9. The method for manufacturing a semiconductor laser module according to claim 7, wherein the heat absorption side substrate of the Peltier module is made of a metal plate, and the Peltier element side of the heat absorption side substrate has an electric insulating layer and an ITO layer. When a Peltier element electrode layer is sequentially formed and a plating layer for improving solder wettability is formed on the semiconductor laser element side of the heat absorption side substrate, the electrical insulating layer is formed by physical vapor deposition or chemical vapor deposition. And a method for manufacturing a semiconductor laser module. 10. A method for manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the same is housed in a package, wherein an electrically insulating layer, an ITO layer, and a Peltier element electrode are provided on an inner surface of the package. A method for manufacturing a semiconductor laser module, wherein, when the layers are sequentially laminated, the ITO layer and the Peltier element electrode layer are once film-formed and then patterned into a predetermined shape by etching. 11. A method for manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser element and a Peltier element for cooling the semiconductor laser element is housed in a package, wherein the heat radiation side substrate of the Peltier module is made of a metal plate, and the heat radiation side substrate. Electrical insulation layer on the Peltier element side of
A TO layer and a Peltier element electrode layer are sequentially laminated, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate, and the heat radiation side substrate of the Peltier module is packaged through the plating layer. A method for manufacturing a semiconductor laser module, wherein the ITO layer and the Peltier element electrode layer are once film-formed and then patterned into a predetermined shape by etching when soldered to the inner surface of the. 12. The method for manufacturing a semiconductor laser module according to claim 7 or 8, wherein the heat absorption side substrate of the Peltier module is made of a metal plate, and an electric insulation layer and an ITO layer are provided on the Peltier element side of the heat absorption side substrate. When the electrode layers for the Peltier device are sequentially formed and the plating layer for improving the wettability of solder is formed on the semiconductor laser device side of the heat absorption side substrate, the ITO layer and the electrode layer for the Peltier device are once formed into a film. And then patterned into a predetermined shape by etching. 13. A method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser device and a Peltier device for cooling the same is housed in a package, wherein an electrically insulating layer, an ITO layer, and a Peltier device electrode are provided on an inner surface of the package. The method for manufacturing a semiconductor laser module, wherein the ITO layer and the Peltier device electrode layer are formed into a predetermined pattern by vapor deposition or sputtering when the layers are sequentially laminated. 14. A method of manufacturing a semiconductor laser module in which a Peltier module having a semiconductor laser device and a Peltier device for cooling the same is housed in a package, wherein the heat dissipation side substrate of the Peltier module is made of a metal plate, and the heat dissipation side substrate. Electrical insulation layer on the Peltier element side of
A TO layer and a Peltier element electrode layer are sequentially laminated, and a plating layer for improving solder wettability is formed on the package side of the heat radiation side substrate, and the heat radiation side substrate of the Peltier module is packaged through the plating layer. The method for manufacturing a semiconductor laser module, wherein the ITO layer and the Peltier element electrode layer are formed into a predetermined pattern by vapor deposition or sputtering when soldered to the inner surface of the semiconductor laser module. 15. The method for manufacturing a semiconductor laser module according to claim 7, wherein the heat absorption side substrate of the Peltier module is made of a metal plate, and an electric insulating layer and an ITO layer are provided on the Peltier element side of the heat absorption side substrate. When a Peltier element electrode layer is sequentially formed and a plating layer for improving solder wettability is formed on the semiconductor laser element side of the heat absorption side substrate, the ITO layer and the Peltier element electrode layer have a predetermined pattern. A method of manufacturing a semiconductor laser module, which is formed into a shape by vapor deposition or sputtering.