JP2003133281A - Apparatus for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrates capable of quickly and efficiently subjecting the entire surface area of the substrates to a treatment fluid. SOLUTION: In the apparatus for treating the substrates, which comprises a holding means for arranging and holding a plurality of substrates W so as to be spaced in a thickness direction, a driving means for rotating the holding means so as to make the aligned direction of the substrates W the axial direction, and a fluid feeding means 11 for feeding the treatment fluid to the substrates W held by the holding means, the fluid feeding means 11 is constituted so that first feeding ports 13 for diffusing and spraying the treatment fluid L1 in a direction having the components, which are parallel to surfaces of the substrates W held by the holding means, are disposed over the aligned direction of the substrates W and second feeding ports 14 for diffusing and spraying the treatment fluid L2 in a direction perpendicular to the surfaces of the substrates W are disposed over the aligned direction of the substrates W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning apparatus, and more particularly to a batch type processing used for processing an electronic substrate using a fluid such as a cleaning chemical in the manufacture of semiconductor devices and liquid crystal display devices. Regarding the device.

[0002]

2. Description of the Related Art Wet cleaning using a cleaning chemical is widely performed in the manufacturing process of semiconductor devices and liquid crystal display devices. One of the substrate processing apparatuses used in this wet cleaning is a batch type spray cleaning apparatus capable of simultaneously processing a plurality of substrates.

FIG. 9 shows the construction of a batch-type spray cleaning device. The spray cleaning apparatus 1 shown in this figure includes a cylindrical processing chamber 2 for accommodating a substrate W to be processed. A motor 3 is arranged outside the processing chamber 2,
The rotating shaft 4 of the motor 3 penetrates the side wall portion (cylindrical bottom wall) of the processing chamber 2 and projects into the processing chamber 2. on the other hand,
A holding means 5 for holding a plurality of substrates W is housed in the processing chamber 2. This holding means 5 includes two rotors 6,
Between the rotors 6 and 7, a plurality of rod-shaped holding members 8 are provided between the rotors 6 and 7 so as to surround the periphery of the substrate W. )
It is erected. The holding means 5 is fixedly provided at the tip of the rotary shaft 4 that projects into the processing chamber 2. In the state where the holding means 5 is fixed to the rotary shaft 4 at the tip,
The rotary shaft 4 is fixed to the center of one rotor 6 so as to be normal to the rotor 6.

Further, in the processing chamber 2, there is provided a supply means 9 for supplying the cleaning chemical liquid L to the substrate held by the holding means 5. The supply means 9 is provided with a plurality of supply ports 9a for diffusing and spraying the cleaning chemical liquid L over the arrangement direction of the substrates W held by the holding means 5, and the arrangement state of these supply ports 9a is, for example, There are various configurations such as:

For example, in the first configuration shown in FIG. 10, in a state where the cleaning chemical liquid is diffused and jetted in parallel with the surface of the substrate W,
The supply ports 9a are arranged at a ratio of 1: 1 with respect to the substrate W. As a result, the cleaning chemical liquid L ejected from one supply port 9a is diffused and ejected onto one substrate W. However, when the arrangement intervals of the substrates W are narrow, as shown in the front view of the supply means in FIG. 11, the supply ports 9a are divided into two rows and arranged alternately so that the supply openings are arranged at the arrangement intervals of the substrates W. The arrangement intervals of 9a are matched.

Further, as a modification of the first structure, the supply port for obliquely jetting the cleaning chemical solution to the surface of the substrate is arranged in the arrangement direction of the substrates so that the single jetting port makes the jetting diffuse. There is also a chemical liquid supply means configured to diffuse and spray the cleaning chemical liquid over a plurality of substrates.

In the second configuration shown in FIG. 12, the plurality of supply ports 9a are arranged in two rows along the arrangement direction of the substrates W, so that two supply ports 9a are provided for one substrate W. The cleaning chemical liquid L ejected from the above is diffused and ejected. As a modified example of the second configuration, there is also a chemical liquid supply unit in which the supply ports for diffusing and spraying the cleaning chemical liquid in the arrangement direction of the substrates W are arranged in two rows in the arrangement direction of the substrates.

[0008]

However, the substrate processing apparatus having the above-mentioned structure has the following problems. That is, in the substrate processing apparatus in which the chemical liquid supply means has the first configuration, the processing chemical liquid is diffused and sprayed in parallel to the substrate surface, so that the processing chemical liquid can be quickly diffused to the substrate surface. Due to the diffusion, the spray concentration (mist concentration) of the processing chemical liquid L supplied to the surface of the substrate becomes thin, and the processing chemical liquid cannot efficiently act on the substrate surface.

Here, when wiring is formed in the manufacturing process of a semiconductor device, pattern etching of wiring using a resist pattern as a mask, ashing treatment for removing the resist pattern, and organic for removing ashing residue Wet cleaning using a stripping solution is sequentially performed. In this series of steps, when a corrosive gas containing chlorine or fluorine is used for the pattern etching of, the wiring is corroded by the action of chlorine or fluorine left in the ashing residue during the wet cleaning of. It is easy to occur. In such a case, it is known that in the wet cleaning, by increasing the concentration of ammonium fluoride in the organic stripping solution, the corrosion of the wiring can be prevented. However, when the concentration of ammonium fluoride is increased, for example, the tungsten plug disappears,
It is easy to worsen patterns other than wiring. For this reason,
In the wet cleaning described above, it is necessary to perform cleaning in which the treatment chemical is allowed to efficiently act on the substrate surface while suppressing the concentration of ammonium fluoride to some extent.

However, in the case of using the substrate processing apparatus in which the chemical solution supply means as described above is the first structure for this wet cleaning, such an efficient processing cannot be performed, so that the wiring Corrosion occurs, and a protrusion (hereinafter referred to as a corrosive protrusion) grows on the side wall of the wiring. Such corrosive protrusions become a factor that causes a short circuit between wirings that have been miniaturized.

Further, in the substrate processing apparatus having the second chemical liquid supply means, the processing chemicals are supplied to one substrate from the two supply ports, so that the mist concentration can be increased to some extent. However, even with such a configuration, as in the case of the first configuration, since the processing chemical solution is diffused in the horizontal direction on the substrate surface, it is not possible to sufficiently prevent the mist concentration from being diluted. Therefore, even when the above-described wet cleaning is performed using this substrate processing apparatus, it is not possible to sufficiently prevent the corrosion of the wiring.

Therefore, an object of the present invention is to provide a substrate processing apparatus capable of quickly and efficiently applying a processing fluid to the entire surface of a substrate.

[0013]

A substrate processing apparatus according to the present invention for achieving the above object has a holding means for arranging and holding a plurality of substrates at intervals in the thickness direction thereof, and an arranging direction of the substrates. The substrate processing apparatus is provided with a drive means for rotating the holding means around the axis and a fluid supply means for supplying a processing fluid to the substrate held by the holding means. In particular, the fluid supply means is provided with a first supply port having a component parallel to the surface of the substrate held by the holding means for diffusing and ejecting the processing fluid in the arrangement direction of the substrates. A second supply port for diffusing and injecting the processing fluid in a direction perpendicular to is provided in the substrate arrangement direction.

In the substrate processing apparatus having such a structure, the first supply port of the fluid supply means has a direction component parallel to the substrate surface and diffuses and sprays the processing fluid. Therefore, the processing fluid diffused and ejected from the first supply port (referred to as the first processing fluid)
Diffuse widely over the surface of the substrate held by the holding means. On the other hand, the second supply port of the fluid supply means diffuses and injects the processing fluid (referred to as the second processing fluid) in the direction perpendicular to the substrate surface. Therefore, the second processing fluid is hardly diffused on the surface of the substrate held by the holding means, and at the position where the second processing fluid collides with the first processing fluid, the second processing fluid is in a direction parallel to the substrate surface of the first processing fluid. Block the spread to. Therefore, while the first processing fluid is diffused on the substrate surface, it is prevented from being unnecessarily diffused by the second processing fluid, so that the first processing fluid is quickly diffused to the substrate surface while the diffusion is performed. The concentration can be kept high to some extent.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a substrate processing apparatus of the present invention will be described below in detail with reference to the drawings. The substrate processing apparatus described in the present embodiment is a substrate processing apparatus used for wet cleaning using a cleaning chemical in, for example, a manufacturing process of a semiconductor device or a liquid crystal display device, and can process a plurality of substrates at the same time. This is a batch-type spray cleaning device. Note that, in the following, the same components as those of the conventional substrate processing apparatus described with reference to FIG. 9 are designated by the same reference numerals, and overlapping description will be omitted.

<First Embodiment> FIG. 1 is a block diagram of a substrate processing apparatus according to the first embodiment. The difference between the substrate processing apparatus shown in this figure and the substrate processing apparatus described in the related art with reference to FIG. 9 lies in the configuration of the fluid supply means, and the other configurations are the same. That is, the substrate processing apparatus 10 includes the processing chamber 2, the motor 3, the rotary shaft 4, and the substrate W.
And a fluid supply means 11 characteristic of the present invention. The motor 3 and the rotating shaft 4 constitute a driving means for rotating the holding means 5.

FIG. 2 shows a front view of the fluid supply means 11. This figure corresponds to a view of the fluid supply means 11 in the substrate processing apparatus of FIG. 1 as seen from below. The fluid supply means 11 shown in FIGS. 1 and 2 is for diffusing and supplying the processing fluids L1 and L2 to the substrate W held by the holding means 5, and is rotated along the inner peripheral wall of the processing chamber 2. It is inserted and arranged in the processing chamber 2 while being extended in the axial direction of the shaft 4.

The fluid supply means 11 has a first supply port 13
A plurality of first supply ports 13 arranged in the arrangement direction of the substrates W
And the rows of the second supply ports 14 in which a plurality of the second supply ports 14 are arranged in the arrangement direction of the substrates W are provided in parallel. The first supply port 13 is provided in one supply pipe 13a (illustrated only in FIG. 1) extending in the arrangement direction of the substrates W. Further, the second supply port 14 is provided in one supply pipe 14a (illustrated only in FIG. 1) extending in the arrangement direction of the substrates W. The processing fluid L supplied from the supply ports 13 and 14
When L1 and L2 are the same, these supply ports 13 and 14
The supply pipes provided with may be connected to each other.

Here, FIG. 3 shows a configuration example of the first supply port 13 and the second supply port 14. These first supply port 1
The third and second supply ports 14 are each provided with a linear slit 17 on the surface 16 on the supply end side, and a blowout hole 18 communicating with the supply pipe is formed at the center of the slit 17. Then, the processing fluid L supplied at high pressure to the supply pipe
1 and L2 are configured to be fan-shaped diffused in the extending direction of the slit 17.

Further, as shown in FIGS. 2, 3 and 4 mentioned above, the first supply port 13 is processed with a component parallel to the surface of the substrate W held by the holding means. Fluid L1
The first processing fluid L1 is provided so as to be diffused and ejected. Specifically, in the state where the extending direction of the slit 17 is adjusted so that the first processing fluid L1 is diffused and jetted in the oblique direction with respect to the surface of the substrate W (see FIG. 2), the supply pipe is connected to the supply pipe. It is supposed to be provided.

The first processing fluid L1 diffused and sprayed from each of the first supply ports 13 is supplied to all of the substrates W held by the holding means so that the first processing fluid L1 is evenly supplied. It is assumed that the arrangement interval is set. In this way, the first processing fluid L1 is inclined with respect to the surface of the substrate W.
By providing the first supply port 13 so as to diffuse and inject the liquid, even if the position between the first supply port 13 and the substrate W is misaligned, the first supply port 13 can be reliably applied to all the surfaces of the substrate W. The processing fluid L1 can be diffused and sprayed.

Further, these first supply ports 13 can be used without waste on the surface of each substrate W held by the holding means.
It is assumed that the processing fluid L1 is provided so as to be diffused. Therefore, the first supplied from the first supply port 13
It is preferable that the diffusion center O1 of the processing fluid L1 is directed near the center line passing through the center Ow of the substrate W held by the holding means (see FIG. 4).

Then, the second supply port 14 diffuses and injects the processing fluid L2 (referred to as the second processing fluid L2) in a direction perpendicular to the surface of the substrate W held by the holding means. It is provided (see FIG. 2). Therefore, the second supply port 14 is provided in the supply pipe with the slit 17 extending in a direction perpendicular to the surface of the substrate W. And each 2nd supply port 14 is the 2nd process fluid L2 diffused and sprayed from these 2nd supply ports 14.
However, the arrangement interval is set so that all the substrates W held by the holding means are uniformly supplied.

In the second supply port 14, the diffusion center O2 of the second processing fluid L2 is substantially parallel to the diffusion center O1 of the first processing fluid L1 supplied from the first supply port 13. W provided as described above and held by the holding means
It is assumed that they are arranged on the opposite side of the first supply port 13 with the extension line R of the radius of (1) interposed therebetween (see FIG. 4). However, the second
The second process fluid L2 diffused and sprayed from the supply port 14 is
It is directly supplied onto the substrate W held by the holding means. Further, the diffusion center O1 of the first processing fluid L1 and the diffusion center O2 of the second processing fluid L2 are not limited to being substantially parallel, and the diffusion irradiation of the first processing fluid L1 is performed in all directions. It is important that the second processing fluid L2 is set so as not to be blocked by the diffused irradiation of the second processing fluid L2.

The second supply port 1 having the above structure
The row in which 4 is arranged is preferably provided on the rotation direction r side of the substrate W with respect to the row in which the first supply port 13 is arranged. However, the arrangement relationship between the row in which the first supply ports 13 are arranged and the row in which the second supply ports 14 are arranged with respect to the rotation direction r may be reversed.

The second processing fluid L2 supplied from the second supply port 14 may be liquid or gas.
Further, the second processing fluid L2 may be the same substance as the first processing fluid L1 or may be a substance that enhances the treatment by the first processing fluid L1. Furthermore, for the purpose of achieving uniformity of processing on the surface of the substrate W, the second processing fluid L2 is a substance that does not affect the processing by the first processing fluid L1 or the surface of the substrate W (for example, It is preferably an active gas).

Further, in the fluid supply means 11, the supply ports 19 and 19 located at both ends in the arrangement direction of the substrates W (see FIG. 2) are parallel to the substrate W and the processing fluid (L1 or L1).
2) may be provided so as to be diffused and injected. In this case, the first processing fluid L1 diffused and jetted from the first supply port 13 and the second processing fluid L2 diffused and jetted from the second supply port 14 are diffused and jetted from the supply ports 19 and 19. It is set to be blocked by the fluid (L1 or L2), which prevents extra splattering of the processing fluid (L1 and L2) in the processing chamber.

In the substrate processing apparatus 10 having such a structure,
The first supply port 13 provided in the fluid supply unit 11 has a directional component parallel to the surface of the substrate W and diffuses and jets the first processing fluid L1. Therefore, the first processing fluid L1 diffused and jetted from the first supply port 13 diffuses widely over the surface of the substrate W held by the holding means. On the other hand, the fluid supply means 1
The second supply port 14 provided in No. 1 diffuses and jets the second processing fluid L2 in a direction perpendicular to the surface of the substrate W. Therefore, the second processing fluid L2 is hardly diffused on the surface of the substrate W held by the holding means, and the first processing fluid L1 collides with the first processing fluid L1.
The diffusion of No. 1 in the direction parallel to the surface of the substrate W is blocked.

Therefore, the first processing fluid L1 is sufficiently diffused and supplied on the surface of the substrate W (in the direction opposite to the rotation direction r of the substrate W), but is diffused more than necessary by the second processing fluid L2. Since it is suppressed, the first processing fluid L1 can be quickly diffused to the surface of the substrate W, and the diffusion concentration thereof can be kept high to some extent. As a result, the substrate W
It becomes possible to make the first processing fluid L1 act on the surface quickly and effectively.

Particularly, the row in which the second supply ports 14 are arranged is
In the case where the first supply port 13 is provided on the rotation direction r side of the substrate W with respect to the arranged column, the diffusion component of the first processing fluid L1 affected by the rotation of the substrate W is also It is blocked by the diffusion injection of the second processing fluid L2. Therefore, the first
Diffusion of the processing fluid L1 of the second processing fluid L1
1 has a large effect of suppressing, the diffusion concentration of the first processing fluid can be kept higher, and the first processing fluid L1 can be more effectively applied to the surface of the substrate W.

<Second Embodiment> FIG. 5 is a view for explaining a second embodiment of the substrate processing apparatus of the present invention. In the substrate processing apparatus of the second embodiment shown in this figure, as the fluid supply means, a row in which the first supply ports 13 provided in the fluid supply means of the above-described first embodiment are arranged, and the second supply port 1
In addition to the row in which 4 is arranged, a row in which the third supply port 21 is arranged is further provided.

The third supply port 21 is provided in a single supply pipe (not shown) extending in the arrangement direction of the substrates W.
The supply pipe provided with the third supply port 21 is provided, for example, in parallel with the supply pipe provided with the first supply port 13 and the second supply port 14. The third processing fluid L3 supplied from the supply port 13 is the first processing fluid L1 or the second processing fluid L1.
When the processing fluid L2 is the same as the processing fluid L2, the supply pipes that supply the same fluid may be connected to each other.

These third supply ports 21 are the second supply ports 1
It is assumed that it is provided in the same manner as 4. That is, the third supply port 21 is provided so as to diffuse and inject the processing fluid L3 (referred to as the third processing fluid L3) in a direction perpendicular to the surface of the substrate W held by the holding means. Therefore, in the third supply port 21, with the extending direction of the slit 17 perpendicular to the surface of the substrate W,
It is provided in the supply pipe. And each third
The supply ports 21 are arranged at intervals so that the third processing fluid L3 diffused and sprayed from the third supply ports 21 is uniformly supplied to all the substrates W held by the holding means. It is assumed that

A row of the first supply ports 13 is arranged between the row of the third supply ports 21 and the row of the second supply ports 14, and the diffusion center O1 of the first processing fluid L1 and the second center Center O2 of the processing fluid L2 and the diffusion center O of the third processing fluid L3
3 and 3 are provided so as to be substantially parallel to each other.
However, the third processing fluid L3 diffused and sprayed from the third supply port 21 is directly supplied onto the substrate W held by the holding means. Further, the diffusion center O1 of the first processing fluid L1, the diffusion center O2 of the second processing fluid L2, and the third
The diffusion center O3 of the processing fluid L3 is not limited to be substantially parallel, and the diffusion irradiation of the first processing fluid L1 is performed in all directions in the second processing fluid L2 and the third processing fluid L.
It is important to set so as not to be blocked by the diffuse irradiation of No. 3.

Further, in this case, it is preferable that the diffusion center O1 of the first processing fluid L1 is oriented to the center line passing through the center Ow of the substrate W held by the holding means.

The third processing fluid L3 supplied from the third supply port 21 is assumed to be the same as the second processing fluid L2.

In the substrate processing apparatus provided with the fluid supply means having such a structure, the first processing fluid L1 is widely diffused on the surface of the substrate W, but the diffusion is on both sides in the rotation direction of the substrate W. It is blocked by the second processing fluid L2 and the third processing fluid L3. Therefore, as compared with the first embodiment, the effect of suppressing the first processing fluid L1 from spreading more than necessary is higher. As a result, the diffusion concentration of the first processing fluid L1 can be kept higher than in the first embodiment, and the first processing fluid L1 acts more effectively on the surface of the substrate W. It is possible to let

In the above first and second embodiments, the case where the present invention is applied to the spray cleaning apparatus for performing wet cleaning has been described. However, the substrate processing apparatus of the present invention is not limited to application to such an apparatus, and can be applied to a substrate processing apparatus that performs processing using gas. In this case, gas is diffused and ejected from the first supply port 13 as the first processing fluid L1.
Further, in this case, the second processing fluid L2 and the third processing fluid L3 are preferably gases, and are the same substance as the first processing fluid L1, or the first processing fluid L1.
It is assumed that the substance is a substance that improves the treatment of No. 1 or a substance that does not affect the treatment by the first treatment fluid L1 or the surface of the substrate W.

Further, in the above-mentioned embodiment, the first
The configuration has been described in which the supply port 13 is provided so as to obliquely jet the first processing fluid L1 to the surface of the substrate W. However, the first supply port 13 may be provided so as to diffuse and inject the first processing fluid L1 in parallel to the surface of the substrate W. In this case, the first supply ports 13 are arranged at a ratio of 1: 1 with respect to the substrate W (with respect to the arrangement position of the substrate W).

[0040]

EXAMPLE Next, an example in which the process using the substrate processing apparatus having the above-mentioned structure is applied to the case where wiring is formed in the manufacturing process of a semiconductor device will be described. Here, the substrate processing apparatus was used for the wet cleaning for removing the ashing residue and the reaction product after the formation of the wiring. Then, the wet cleaning performed by using the substrate processing apparatus according to the first embodiment is Example 1, and the wet cleaning performed by using the substrate processing apparatus according to the second embodiment is Example 2. A comparative example was obtained by performing wet cleaning using the substrate cleaning apparatus described with reference to FIG. Hereinafter, a series of steps for forming the wiring will be described with reference to the sectional process drawing of FIG.

First, as shown in FIG. 6A, the substrate 10
On top of the wiring formation layer 1 by magnetron sputtering.
02 was formed. The layer structure (film thickness) of the wiring forming layer 102 and the conditions for forming each layer (deposition atmosphere pressure, applied power, sputtering gas and flow rate) were as follows from the bottom layer in order. However, the film forming temperature was 300 ° C. In the following, sccm is standard cubic centimeter / minutes
(Cm ³ / min), which is the flow rate in the standard state. Ti ... 20nm (0.52Pa, 2kW, Ar35scc
m) TiN ... 20nm (0.78Pa, 6kW, N 2 42scc
m, Ar21sccm) Al-0.5% Cu ... 500 nm (0.52 Pa, 15
kW, Ar65sccm) Ti ... 5 nm (0.52 Pa, 2 kW, Ar35 sccm) TiN ... 100 nm (0.78 Pa, 6 kW, N ₂ 42 s)
ccm, Ar21sccm)

Next, as shown in FIG. 6B, a resist pattern 103 was formed on the wiring forming layer 102 by photolithography.

After that, as shown in FIG. 6C, a wiring 102a formed by patterning the wiring forming layer 102 was formed by dry etching using the resist pattern 103 as a mask. At this time, in order to secure the etching anisotropy, the etching was performed while forming the reaction product 104 on the etching sidewall. The etching conditions were as follows. Etching gas and flow rate: BCl ₃ / Cl ₂ = 100 sc
cm / 150 sccm, etching atmosphere pressure: 1 Pa microwave: 400 mA, RF power: 110 W, etching amount: 40% over etching.

Next, as shown in FIG. 6D, an ashing process for removing the resist pattern (103) was performed. The parallel plate type RIE (re
An ashing process was performed under the following conditions using an active ion etching) device. Introduced gas and flow rate: O ₂ = 3250 sccm, substrate temperature: 250 ° C., processing atmosphere pressure: 150 Pa, applied power: 900 W, processing time: 60 seconds.

After the above ashing process, the substrate 101
Resist residue 103a remains above the electrode, and the electrode 10
The reaction product 104 was left on the side wall of 2a.

Therefore, as shown in FIG. 6 (5), the substrate 1
01 resist residue (103a) and electrode 10
A wet cleaning process was performed to remove the reaction product (104) on the side wall of 2a. In this process, the first embodiment
As a comparative example, the substrate processing apparatus of the first embodiment is used, and as a second example, the substrate processing apparatus of the second embodiment shown in FIG. The treatment with the device was performed.

This wet cleaning is performed in each substrate processing apparatus.
First, chemical cleaning → pure water rinse → spin drying
The procedure was performed. First processing fluid used in processing
L1, second processing fluid L2, third processing fluid L3, and
And conventional processing chemicals are used for chemical cleaning.
NH_FourF (1.0% by weight) + ether solvent
(75% by weight) + The balance is pure water using an organic cleaning solution of water.
Pure water is used for water rinsing, and dry treatment is used.
N containing IPA (isopropyl alcohol) vapor ₂gas
Was used.

After the above wet cleaning, as shown in FIG. 6 (6), an interlayer insulating film 105 was formed on the substrate 101 in a state of covering the wiring 102 a.

Next, the corrosion state of the wiring 102a formed on the substrate 101 as described above was evaluated. The result is shown in FIG. Note that this evaluation was performed before forming the interlayer insulating film 105.

FIG. 7 shows that the wet cleaning process was carried out five times for each of Example 1, Example 2, and Comparative Example, and the rate of occurrence of protrusions caused by metal corrosion of the wiring at that time was measured at each cleaning time. It is the result of counting. Here, 25 substrates are cleaned by one wet cleaning, and each substrate has the smallest wiring width (space width) (0.18 μm), and 25 points that are easily affected by corrosion are in an area of 3 μm × 3 μm. I observed. Then, if the maximum value of the protrusions (referred to as corrosive protrusions) generated by corrosion in each area is 0.05 μm or more, which can cause a short circuit between the wirings at a wiring width of 0.18 μm, one location Was counted as the occurrence of corrosion. Then, the number of corrosion occurrences / (25 sheets × 25 places) was shown as the corrosion occurrence rate for each cleaning cycle.

As shown in the graph of FIG. 7, in Example 1 and Example 2, the occurrence rate of corrosion was suppressed to be extremely lower than that in the comparative example, and the effect of improving the cleaning efficiency by the substrate processing apparatus should be confirmed. I was able to.

In addition, in the graph of FIG.
Corrosion occurring in the area of the same location of each substrate (processing slots # 1 to # 25) for the 25 substrates processed at the same time and the 25 substrates processed at the same time in the comparative example. The maximum size of the sexual process was shown. As shown in this graph, all the corrosive protrusions generated in Example 1 were 0.0
It was 2 μm or less. Here, in a wiring having a line width of 0.10 μm that can be formed by dry etching using an aluminum-based material, the size of the corrosive protrusion is 0.02 μm.
If the thickness is equal to or less than m, a short circuit will not occur due to the corrosive protrusions. Therefore, by performing the cleaning after the ashing by using the substrate cleaning apparatus of the first embodiment used in Example 1, It was confirmed that it is possible to realize the formation of aluminum-based wiring having a line width of 10 μm.

[0053]

As described above, according to the substrate processing apparatus of the present invention, the diffusion concentration of the processing fluid on the substrate surface can be kept high to some extent while the processing fluid is quickly diffused on the substrate surface. It becomes possible to perform the treatment in which the treatment fluid is made to act quickly and efficiently on the entire surface. As a result, for example, in the cleaning after the patterning of the metal material using the corrosive gas, the cleaning liquid can be applied to the substrate surface quickly and efficiently, so that the cleaning can be performed while preventing the corrosion of the metal pattern. become. As a result, it becomes possible to manufacture a semiconductor device or a liquid crystal display device in which a short circuit between wirings due to metal corrosion is prevented.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to a first embodiment.

FIG. 2 is a front view of a fluid supply unit in the substrate processing apparatus of the first embodiment.

FIG. 3 is a diagram showing a configuration of a supply port provided in a fluid supply unit.

FIG. 4 is a diagram showing an arrangement state of supply ports with respect to a substrate held by a holding unit.

FIG. 5 is a diagram for explaining the configuration of the substrate processing apparatus of the second embodiment.

FIG. 6 is a sectional process diagram illustrating the substrate processing of the example.

FIG. 7 is a graph showing the incidence of metal corrosion.

FIG. 8 is a graph showing the size of metal corrosion that has occurred.

FIG. 9 is a diagram showing a configuration of a conventional substrate processing apparatus.

FIG. 10 is a diagram showing a first configuration of a fluid supply unit in a conventional substrate processing apparatus.

FIG. 11 is a diagram showing a modification of the first configuration of the fluid supply means in the conventional substrate processing apparatus.

FIG. 12 is a diagram showing a second configuration of a fluid supply unit in a conventional substrate processing apparatus.

[Explanation of symbols]

3 ... Motor (driving means), 4 ... Rotating shaft (driving means), 5
... holding means, 10 ... substrate processing apparatus, 11 ... fluid supply means, 13 ... first supply port, 14 ... second supply port, 21 ... third
Supply port, L1 ... First processing fluid, L2 ... Second processing fluid, L3 ... Third processing fluid, r ... Rotation direction, W ... Substrate

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hayato Iwamoto             6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni             -Inside the corporation F term (reference) 3B201 AA02 AA03 AB33 AB42 BB22                       BB90 BB92 BB93 BB95 CC01                       CC13

Claims (6)

[Claims] 1. A holding means for arranging and holding a plurality of substrates at intervals in the thickness direction, a driving means for rotating the holding means around the arranging direction of the substrates, and a holding means held by the holding means. And a fluid supply means for supplying a treatment fluid to the substrate, wherein the fluid supply means diffuses the treatment fluid in a direction having a component parallel to the surface of the substrate held by the holding means. A first supply port for jetting is provided over the arrangement direction of the substrates, and a second supply port for jetting the processing fluid in a direction perpendicular to the substrate surface held by the holding means is arranged in the substrate arrangement direction. A substrate processing apparatus, wherein the substrate processing apparatus is provided over. 2. The substrate processing apparatus according to claim 1, wherein the arrangement row of the second supply ports is provided on the rotation direction side of the holding means with respect to the arrangement row of the first supply ports. Substrate processing equipment. 3. The substrate processing apparatus according to claim 1, wherein the first supply port obliquely diffuses and injects a processing fluid onto the surface of the substrate held by the holding means. . 4. The substrate processing apparatus according to claim 1, wherein the processing fluid diffused and jetted from the first supply port is a liquid, and the processing fluid diffused and jetted from the second supply port is a gas. A characteristic substrate processing apparatus. 5. The substrate processing apparatus according to claim 1, wherein the fluid supplying means diffuses and injects a processing fluid in a direction perpendicular to the surface of the substrate held by the holding means.
Supply ports are provided in the arrangement direction of the substrates, and the arrangement line of the first supply ports is provided between the arrangement line of the third supply ports and the arrangement line of the second supply ports. A substrate processing apparatus characterized by the above. 6. The substrate processing apparatus according to claim 5, wherein the processing fluid diffused and jetted from the first supply port is a liquid, and the processing fluid diffused and jetted from the second supply port and the third supply port. The substrate processing apparatus, wherein the processing fluid diffused and ejected from the substrate is a gas.