JP2003133244A - Beam irradiation apparatus and beam reflection apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To widely efficiently form a single crystal thin film. SOLUTION: By reflecting a beam, which is supplied by means of a single beam source, using a reflection unit 160 for generating a plurality of atom flow components that are incident on a substrate 11 with a plurality of prescribed incident angles, an irradiated surface is irradiated with gas in a plurality of prescribed incident directions. The gas beam irradiation from a plurality of prescribed directions different from each other is made possible without requiring a plurality of beam sources, and thus by the irradiation of the gas beam to a large substrate on which surface the thin film of prescribed material is formed or a large substrate on which surface the thin film of prescribed material grows by using this apparatus, the single crystal thin film of the material can be efficiently formed over a large area without scanning the substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a beam irradiator and a beam reflector capable of efficiently forming a single crystal thin film or an axially oriented polycrystalline thin film on a substrate.

[0002]

2. Description of the Related Art A well-known epitaxial growth method can be used to form a single crystal thin film of a predetermined substance on a single crystal substrate of the same substance and having the same crystal orientation. On the other hand, in order to form a single crystal thin film on a substrate having a different crystal structure, such as an amorphous substrate or a polycrystalline substrate, or a substrate having a different substance, the amorphous thin film or the polycrystalline thin film is once formed on the substrate. A method of forming and then converting these thin films into single crystals is used.

Conventionally, a melt recrystallization method and a lateral solid phase epitaxy method have been used for single crystallization of a polycrystalline semiconductor thin film and an amorphous amorphous semiconductor thin film.

[0004]

However, these methods have the following problems. That is, in the former melt recrystallization method, when the material forming the thin film is a high melting point material, a large thermal strain is generated in the substrate, and the physical and electrical characteristics of the thin film to be used are impaired. was there. Further, an electron beam or a laser beam is used for melting. For this reason,
Since it is necessary to scan the spots of these beams over the entire surface of the substrate, there has been a problem that it takes a lot of time and cost for recrystallization.

In the latter lateral solid phase epitaxy method, there is a problem that the growth rate is slow in addition to being easily influenced by the crystallization method of the substance constituting the substrate. For example, it took 10 hours or more to grow a single crystal thin film having a thickness of about 10 μm. Moreover, when the growth progresses to some extent, a lattice defect occurs and the growth of the single crystal is stopped, which makes it difficult to obtain large crystal grains.

Further, in any of the methods, there is a problem that it is necessary to bring the seed crystal into contact with the polycrystalline thin film or the amorphous thin film. In addition, since the growth direction of the single crystal is the direction along the main surface of the thin film, that is, the lateral direction, the growth distance to the crystal becomes long, resulting in various obstacles during the growth of the single crystal. was there. For example, when the substrate is made of an amorphous material such as glass, since the lattice positions of the substrate have no regularity, this irregularity influences the growth of the single crystal, and as a result, Although the grain size is large, there is a problem that it grows as a polycrystal.

On the other hand, in order to solve the above-mentioned problems in these methods, an attempt has been made to shorten the growth distance by utilizing the vertical growth of the thin film and thereby shorten the growth time. I was broken. That is, a method has been attempted in which a seed crystal is brought into contact with the entire surface of a polycrystalline thin film or an amorphous thin film and solid phase epitaxial growth is performed in a direction perpendicular to the main surface of the thin film, that is, in the vertical direction. However, as a result, the seed crystal and the amorphous thin film are only partially contacted with each other, and the lateral epitaxial growth only occurs from this contact portion. Was not formed. In addition, in this method, the seed crystal and the grown single crystal film adhere to each other, which makes it very difficult to separate them. There was a problem that it adhered to the side.

Further, when the substrate itself has a single crystal structure, any conventional technique can be used to form a single crystal thin film having a crystal orientation different from that of the substrate. However, there was a problem that it was impossible.

The same applies to a polycrystalline thin film in which one crystal axis is aligned in the same direction between crystal grains, that is, an axially oriented polycrystalline thin film. That is, the conventional technique has a problem that it is difficult to form an axially oriented polycrystalline thin film oriented in a desired direction on an arbitrary substrate.

The present invention has been made to solve the above-mentioned problems of the conventional method, and provides a beam irradiating device and a beam reflecting device capable of efficiently forming a single crystal thin film. With the goal.

[0011]

A beam irradiation apparatus according to a first aspect of the present invention is a beam irradiation apparatus for irradiating a surface of a sample with a beam of gas, which is a unit for supplying a beam of gas. A beam source; and a reflecting means for reflecting the beam supplied by the beam source to allow the gas to irradiate the irradiated surface with a plurality of predetermined incident directions. A plurality of reflecting means arranged in the path of the beam supplied from the beam source and reflecting the beam in a plurality of directions so that the beam cross-section expands two-dimensionally as the beam advances. And a concave reflecting surface that further reflects the plurality of diverging beams so as to make the plurality of diverging beams incident on the surface to be irradiated as a substantially parallel beam from a plurality of directions. Comprising a second reflector having, a.

A beam irradiating apparatus according to a second aspect of the present invention is the beam irradiating apparatus according to the first aspect, wherein the reflecting means is provided in a path of the beam from the first reflector to the substrate. And a rectifying unit that aligns the directions of the beams.

A beam irradiation apparatus according to a third aspect of the present invention is the beam irradiation apparatus according to the first aspect, wherein the reflecting means includes the beam between the beam source and the first reflector. Beam distribution adjustment for adjusting the beam amount of each component reflected in the plurality of directions by the first reflector by adjusting the distribution of the beam on the cross section which is inserted in the path of and is perpendicular to the path. Means are further provided.

The beam reflecting apparatus according to a fourth aspect of the present invention reflects the beam of gas supplied from a single beam source, so that the gas has a plurality of predetermined incident directions to irradiate the sample. A beam reflection device capable of irradiating a surface, wherein the beam is reflected in a plurality of directions to generate a plurality of divergent beams whose beam cross-section expands two-dimensionally as the beam advances. And a second reflector having a concave reflecting surface that further reflects the plurality of divergent beams so as to be incident on the irradiated surface as a substantially parallel beam from a plurality of directions. Prepare

A beam irradiation apparatus according to a fifth aspect of the present invention is a beam irradiation apparatus for irradiating an irradiation surface of a sample with a gas beam, and a plurality of beam sources for supplying the gas beam, A plurality of reflecting means for enabling the gas to be applied to a common region of the illuminated surface with a plurality of predetermined incident directions by reflecting the beams provided by a plurality of beam sources; Each of the reflecting means is arranged in a path of the beam supplied from each of the beam sources, and by reflecting the beam, a divergence in which the beam cross section expands substantially one-dimensionally as the beam advances. A first reflector for generating a beam, and a concave surface for further reflecting the divergent beam so as to be incident on the common area of the irradiation surface as a linear or strip shape as a substantially parallel beam. A second reflector having a reflecting surface,
The beam irradiation device further includes a moving unit configured to scan the sample in a direction intersecting the common region having a linear or strip shape.

A beam irradiation apparatus according to a sixth aspect of the present invention is the beam irradiation apparatus according to the fifth aspect, wherein each of the reflecting means has a path of the beam from the first reflector to the substrate. Further, a rectifying means for aligning the direction of the beam is further provided.

According to the seventh aspect of the present invention, the beam reflecting device reflects the beam of the gas supplied from the beam source to irradiate the surface of the sample irradiated with the gas with a predetermined incident direction. A first reflector for generating a divergent beam whose beam cross-section expands in a substantially one-dimensional manner as the beam travels by reflecting the beam; A second reflector having a concave reflecting surface that further reflects the beam so as to enter the linear or strip-shaped region of the irradiated surface as a substantially parallel beam.

In the present invention, the "substrate" is not limited to an object as a simple base provided only for forming a thin film on it, and includes, for example, a device having a predetermined function. And the medium on which the thin film is formed.

Further, in the present invention, the "gas beam" means
This is a concept that includes any of a beam-like ion flow, an atomic flow, and a molecular flow.

[0020]

<Operation of the apparatus according to claim 1> In the apparatus of the present invention, the gas beam supplied from the single beam source is reflected by the reflecting means, so that the plurality of predetermined directions are different from each other. It is incident on the irradiated surface of the sample. Moreover,
The beam is reflected by the first reflector so as to diverge two-dimensionally in a plurality of directions, and is made into a substantially parallel beam by the second reflector. Therefore, the beam is wider than the cross section of the beam supplied by the beam source. The surface to be illuminated can be uniformly illuminated.

<Operation of the device according to claim 2> In the device of the present invention, since the rectifying means is installed in the path of the beam from the first reflector to the sample, the direction of the beam is in a predetermined direction. Get together.

<Operation of the device according to claim 3> Since the device of the present invention is provided with the beam distribution adjusting means, each beam amount of the plurality of components reflected by the first reflector is adjusted, whereby the beam distribution adjusting means is adjusted. , The amount of each beam of a plurality of components incident on the irradiated surface from a plurality of directions is adjusted.

<Operation of the device according to claim 4> In the device of the present invention, the beam of gas supplied from a single beam source is two-dimensionally diverged in a plurality of directions by the first reflector. Since it is reflected by the second reflector and made into a substantially parallel beam by the second reflector, it does not require a plurality of beam sources,
Moreover, it is possible to irradiate the beam from a plurality of directions onto the surface to be processed which is wider than the cross section of the beam supplied by the beam source.

<Operation of the Invention According to Claim 5> In the device of the present invention, after the beam is reflected by the first reflector so as to diverge substantially one-dimensionally, the beam is further reflected by the second reflector. Since the beams are parallel beams, it is possible to irradiate a linear or band-shaped region wider than the beam supplied by the beam source with a parallel beam from a predetermined incident direction. Moreover, since the sample is scanned in the direction intersecting with the linear or strip-shaped region, the beam is uniformly irradiated onto the vast irradiation surface. Further, since a plurality of beam sources and a plurality of reflecting means are provided respectively, the beam is irradiated onto the vast irradiation surface uniformly and from a plurality of incident directions.

<Operation of the Invention According to Claim 6> In the apparatus of the present invention, since the rectifying means is installed in the path of the beam from the first reflector to the substrate, the beam is directed in a predetermined direction. Aligned.

<Operation of the Invention According to Claim 7> In the device of the present invention, after the beam is reflected by the first reflector so as to diverge substantially one-dimensionally, the beam is further reflected by the second reflector. Since the beams are parallel beams, it is possible to irradiate the beam to a linear or band-shaped region wider than the beam supplied by the beam source.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Examples of the embodiments of the present invention will be described below.

<1. First Embodiment> First, the first embodiment of the present invention
The apparatus of the embodiment will be described.

<1-1. Overall Configuration of Apparatus> FIG. 2 is a front sectional view showing the overall configuration of the axially oriented polycrystalline thin film forming apparatus of this embodiment. This apparatus 102 forms an axially oriented polycrystalline thin film on a substrate by growing a thin film of a predetermined substance on the substrate and simultaneously converting this thin film into a uniaxially oriented polycrystalline thin film. It is configured for the purpose.

In this apparatus 102, an electron cyclotron resonance (ECR) ion generator 2 is incorporated in an upper portion of a reaction vessel 1. The ECR ion generator 2 includes a plasma container 3 that defines a plasma chamber 4 therein. A magnetic coil 5 for applying a high DC magnetic field to the plasma chamber 4 is installed around the plasma container 3. A waveguide 6 for introducing microwaves into the plasma chamber 4 and an inert gas introduction pipe 7 for introducing an inert gas such as Ne are provided on the upper surface of the plasma container 3.

The reaction container 1 defines a reaction chamber 8 therein. The bottom of the plasma container 3 defines in its central part an outlet 9 through which the plasma passes. The reaction chamber 8 and the plasma chamber 4 communicate with each other via the outlet 9. Inside the reaction chamber 8, a sample table 10 is provided directly below the outlet 9.
And a substrate 11 is placed on the sample table 10. The substrate 11 is one of the constituent elements of the sample, and may be composed of any material having a polycrystalline structure, an amorphous structure, or a single crystal structure. An axially oriented polycrystalline thin film oriented in a desired direction is formed on the substrate 11.

A reaction gas supply pipe 13 communicates with the reaction chamber 8. A reaction gas for forming a thin film of a predetermined substance on the substrate 11 by plasma CVD is supplied through the reaction gas supply pipe 13. In the example of FIG. 2, three reaction gas supply pipes 13a, 13b, and 13c are provided. A vacuum exhaust pipe 14 is further communicated with the reaction chamber 8. A vacuum device (not shown) is connected to one end of the vacuum exhaust pipe 14, and the gas existing in the reaction chamber 8 is exhausted through the vacuum exhaust pipe 14 to keep the degree of vacuum in the reaction chamber 8 at a predetermined level. Held at the height of. A vacuum gauge 15 that displays the degree of vacuum in the reaction chamber 8 is installed in communication with the reaction chamber 8.

<1-2. Operation of ECR Ion Generator 2> Next, the operation of the ECR ion generator 2 will be described. While introducing an inert gas such as Ne or Ar from the inert gas introducing pipe 7 into the plasma chamber 4, microwaves are simultaneously introduced from the waveguide 6 into the plasma chamber 4. Further, at the same time, the DC current is supplied to the magnetic coil 5, so that the plasma chamber 4
And a DC magnetic field is formed around it. The supplied gas is kept in a plasma state by the action of the microwave and the DC magnetic field. This plasma is generated by high-energy electrons that spiral in accordance with the cyclotron principle by the microwave and the DC magnetic field.

Since this electron has a diamagnetic property,
It moves to the weak magnetic field and forms an electron flow along the magnetic field lines. As a result, in order to maintain the electrical neutrality, the positive ions also form an ion flow along the magnetic field lines along with the electron flow. That is, a downward electron flow and ion flow are formed from the outlet 9 to the reaction chamber 8. Since the ion current flows in parallel with the electron current, when the deionization time elapses,
Recombination with each other results in a neutral atomic flow. Therefore, at a position separated by a predetermined distance or more downward from the outlet 9, almost only a neutral atomic flow is formed.

FIG. 3 shows the ECR ion generator 2
9 is a graph showing the results of actual measurement of the relationship between the ion current density and the distance from the outlet 9 when Ar ⁺ ions of 10 eV were taken out from the outlet 9. According to this graph,
The ion current density starts to decrease rapidly at a distance of 4 to 5 cm from the outlet, and is 1/10 to 1/1 at the position of 14 cm.
It can be read that it decays to a magnitude of 2. The neutral atomic flow is increasing by the amount of the ion current being attenuated. At a position 14 cm or more downward from the outlet 9, almost only the neutral atomic flow is flowing downward.

As described above, since the ECR ion generator 2 is an apparatus for generating ions, it forms an ion flow in parallel with the electron flow. Therefore, by using the ECR ion generator 2, the ion flow can be reduced. There is an advantage that a dense neutral atomic flow can be easily obtained without using other means for activating. Further, since the ion stream is formed in parallel with the electron stream, the traveling direction does not diverge so much, and an ion stream close to a parallel stream with a uniform traveling direction can be obtained. Further, since the parallel ion flow is converted into the neutral atomic flow, the atomic flow also becomes close to a parallel flow with uniform traveling directions.

Further, since the substrate 11 is irradiated with the neutral atomic flow, even if the substrate 11 is electrically insulating, the charge of ions is accumulated in the substrate 11 and the irradiation of the substrate 11 is hindered. There is no fear of that.

<1-3. Operation of Device 102> Next, returning to FIG. 2, the operation of the device 102 will be described. Polycrystalline SiO ₂ (quartz) is used as the substrate 11, and the quartz substrate 11
An example of forming a thin film of single crystal Si on the above will be taken up. SiH for supplying Si, which is the main material of single crystal Si, from each of the reaction gas supply pipes 13a, 13b, and 13c
₄ (silane) gas, B ₂ H for doping p-type impurities
₃ (diborane) gas and PH ₃ (phosphine) gas for doping n-type impurities are supplied. As the inert gas introduced from the inert gas introduction pipe 7, a Ne gas having an atomic weight smaller than that of Si atoms is preferably selected.

By the action of the ECR ion generator 2, a Ne ⁺ ion flow and an electron flow are formed downward from the outlet 9. The distance from the outlet 9 to the substrate 11 is preferably set large enough to convert the Ne ⁺ ion flow into an almost neutral Ne atomic flow. The silane gas supplied from the reactive gas supply pipe 13 is struck toward the substrate 11 by these Ne ⁺ ion flow or Ne atom flow. As a result, the plasma CVD reaction proceeds on the upper surface of the substrate 11, and Si supplied by the silane gas is supplied.
A thin film containing Si as a constituent element, that is, a Si thin film grows.
Further, by supplying diborane gas or phosphine gas while appropriately adjusting the flow rate thereof, the plasma CVD reaction by these gases also progresses at the same time, and a Si thin film containing B (boron) or P (phosphorus) at a desired concentration. Is formed.

The substrate 11 is not heated. Therefore, the substrate 11 is kept at a substantially normal temperature. Therefore, the Si thin film grows at approximately normal temperature. That is, the Si thin film is formed at a temperature equal to or lower than the temperature at which crystallization proceeds by plasma CVD. Therefore, the Si thin film is first formed as amorphous Si by plasma CVD.

The downward Ne atom flow is vertically incident on the upper surface of the substrate 11. That is, the Si thin film that is being formed on the upper surface of the substrate 11 is irradiated with the Ne atomic flow that has proceeded straight from the outlet 9.

By the way, the energy of the plasma formed by the ECR ion generator 2 is set so that the energy of the Ne atoms reaching the substrate 11 does not cause sputtering in the Si thin film, that is, by the irradiation of the Ne atoms. The value known as the threshold energy in Si sputtering (= 27e
It is set to be lower than V). Therefore, the so-called Bravais law acts on the growing amorphous Si thin film. That is, the Si atoms in the amorphous Si are rearranged so that the plane perpendicular to the incident direction of the Ne atomic flow with which the amorphous Si is irradiated becomes the densest crystal plane, that is, the (111) plane.

That is, the amorphous Si thin film that is growing by plasma CVD is a polycrystalline Si thin film in which the direction of the crystal axis perpendicular to one densest plane is aligned with the direction perpendicular to the surface of the substrate 11, that is, uniaxial orientation. Polycrystalline Si
Sequential conversion to thin film. As a result, a polycrystalline Si thin film is formed on the substrate 11, and (1) is formed on the surface of any crystal grain forming this polycrystalline structure.
11) The surface is exposed. Further, from the reaction gas supply pipe 13,
By supplying diborane gas or phosphine gas at the same time as silane gas, p containing B or P added
Type or n type axially oriented polycrystalline Si thin film is formed.

Further, as described above, it is desirable to select Ne which is lighter than Si atoms as an element constituting the atomic flow for irradiating the Si thin film. This means that when a Si thin film is irradiated with a stream of Ne atoms, relatively heavy Si atoms are relatively light N.
This is because there is a high probability that e atoms will be scattered backward, so that it is unlikely that Ne atoms will penetrate and remain in the Si thin film. Further, an inactive element is selected as an element forming the atomic flow to be irradiated, even if the inactive element remains in the Si thin film, the remaining inactive element may be Si and a doped impurity. This is because neither forms a compound, does not significantly affect the electronic properties of the Si thin film, and can be easily removed to the outside by heating the completed single crystal Si thin film to some extent.

By the way, in the apparatus 102, a portion which may be irradiated with the Ne atomic flow or the Ne ion flow before being neutralized, such as the inner wall of the reaction vessel 1 and the upper surface of the sample table 10, is irradiated. It is made of a material that does not generate sputtering. That is, it is composed of a material having a threshold energy higher than the energy of the Ne ion flow. Therefore, since the sputtering due to the irradiation of the Ne atomic flow or the Ne ion flow does not occur in these members, the contamination of the thin film by the material elements forming these members is prevented. Also, damage to these members due to sputtering is prevented.

Table 1 shows the values of the sputtering threshold energy in various combinations of the types of atoms or ions to be irradiated and the elements constituting the target substance. The values listed in Table 1 are all obtained based on simulations, except for some values that are particularly shown.

[0047]

[Table 1]

Since the energy of the Ne ion flow is set to be equal to or lower than the threshold energy of the Si thin film to be formed, a material having a threshold energy in Ne irradiation higher than that of the Si thin film, for example, Ta and W shown in Table 1. , Pt etc. are used for the reaction container 1 and the sample table
0 or the like may be configured. In addition, the surface of those members,
For example, the same effect can be obtained by coating the inner wall of the reaction container 1 or the surface of the sample table 10 with a material having a high threshold energy such as Ta.

The above is an example of the apparatus 1 for forming a Si thin film.
Although the configuration and operation of No. 02 have been described, the apparatus 102 can be used to form an axially oriented polycrystalline thin film other than Si. For example, a GaAs thin film can be formed. In this case, as the reaction gas supplied from the reaction gas supply pipe 13, a reaction gas suitable for forming GaAs containing Ga (CH ₃ ) ₃ or the like is selected. Although GaAs is a compound consisting of two elements, the element forming the ion flow or atomic flow to be irradiated is lighter than the As element having a larger atomic weight among these two elements, such as Ne or A.
Choose r. Similarly, the irradiation energy is set to be equal to or lower than the threshold energy for the As element having a large atomic weight.

In general, when the thin film to be formed is composed of a plurality of elements, the elements constituting the irradiated ion stream or atomic stream are lighter than the element having the largest atomic weight among these plurality of elements. Choose an element. Similarly, the irradiation energy is set so that the atomic weight is less than or equal to the threshold energy of the element having the maximum atomic weight. At this time, in the apparatus 102, the surface of a member such as the sample table 10 that is irradiated with the ion flow or the atomic flow is
It is preferable to use a material having a higher threshold energy than the material of the thin film.

Alternatively, these surfaces may be made of the same material as the thin film. For example, when the device 102 is configured as a device for forming an axially oriented polycrystalline thin film of Si, the surface of the sample stage 10 or the like may be coated with Si. According to this structure, even if sputtering occurs on the sample table 10 or the like, it does not cause contamination of the Si thin film with a different element.

Further, the surface of the member such as the sample table 10 which is irradiated with the ion stream or the atomic stream may be made of a material containing an element heavier than the element constituting the irradiated ion stream or the atomic stream. By doing so, there is an advantage that the elements constituting the ion flow or the atomic flow are less likely to enter the members with the irradiation of the ion flow or the atomic flow. Therefore, deterioration of these members due to invasion of different elements is suppressed.

In the apparatus 102, the conversion into the uniaxially oriented polycrystal simultaneously proceeds successively in the process of growing the Si thin film by plasma CVD. Therefore, it is possible to form an axially oriented polycrystalline Si thin film having a large film thickness at a low temperature. Since an axially oriented polycrystalline thin film can be formed at a low temperature, for example, a uniaxially oriented crystalline thin film can be formed on a substrate on which a predetermined device is already formed without changing the characteristics of this device. .

Further, in the above description, the substrate 11 is placed horizontally on the sample table 10, and as a result, the atomic flow is generated by the substrate 1.
1 was vertically incident. For this reason, when forming, for example, an axially oriented polycrystalline thin film of Si on the substrate 11, the surface of the thin film became the (111) plane. However, by mounting the substrate 11 on the sample table 10 with an inclination, an axially oriented polycrystalline thin film of Si in which the (111) plane is uniformly oriented in a desired direction inclined with respect to the surface of the thin film is formed. It is also possible.

The sample stage 10 may be structured such that the substrate 11 can be horizontally rotated, such as being connected to a rotating mechanism. In addition, the sample table 10 may be configured to have a structure capable of horizontally moving the substrate 11, such as being connected to a horizontal moving mechanism.
With this configuration, it is possible to uniformly form the uniaxially oriented thin film on the substrate 11.

<1-4. Demonstration Data> Here, a test demonstrating that an axially oriented polycrystalline thin film is formed by the above method will be described. FIG. 4 is experimental data showing an electron beam diffraction image of a sample in which an axially oriented polycrystalline Si thin film is formed on a polycrystalline quartz substrate 11 based on the above method. In this verification test, the surface of the substrate 11 was vertically irradiated with the Ne atomic flow.

As shown in FIG. 4, the diffraction spots appear at one point and are distributed continuously along the circumference of the circle. That is, the experimental result shows that one (111) plane of the formed Si thin film is oriented so as to be perpendicular to the incident direction of the atomic flow, and the orientation around the incident direction is arbitrary, and the orientation is restricted to one direction. Indicates that it will not be done. That is, this sample is polycrystalline Si having only one crystal axis aligned,
That is, it is proved that it is formed as axially oriented polycrystalline Si.

On a quartz substrate 11 having a polycrystalline structure having a higher regularity in atomic arrangement than an amorphous structure,
Since the axially oriented polycrystalline Si thin film could be formed, it can be judged that it is naturally possible to form the axially oriented polycrystalline thin film on the substrate having an amorphous structure such as amorphous Si. Further, it can be judged that an axially oriented polycrystalline thin film can be similarly formed on a substrate having a single crystal structure equivalent to a structure in which the size of polycrystalline grains is enlarged.

<2. Second Embodiment> Next, a second embodiment of the present invention will be described.

<2-1. Overall Configuration of Device> FIG. 5 is a front sectional view showing the overall configuration of the device of this embodiment. In the following figures, the same parts as those of the device 102 shown in FIG. 2 are designated by the same reference numerals, and detailed description thereof will be omitted. This device 100 is configured to form a single crystal thin film on a substrate by growing a thin film of a predetermined substance on the substrate and simultaneously converting this thin film into a single crystal thin film. It is a single crystal thin film forming apparatus.

As shown in FIG. 5, the structure of the apparatus 100 is that the reflection plate 12 is installed on the sample table 10.
It is characteristically different from 02. The reflector 12 is installed for the purpose of irradiating the substrate 11 with the atomic flow from a plurality of directions by reflecting the atomic flow supplied from the ECR ion source 2. Therefore, the reflection plate 12 is located immediately below the outlet 9,
Moreover, it is installed so as to be located above the substrate 11.

<2-2. Structure and Function of Reflecting Plate> FIG. 6 is a perspective view of a preferable example of the reflecting plate 12. See also FIG.
FIG. 8 is a plan view of the reflector shown in FIG. 6, and FIGS. 8 and 9 are exploded views. An example of the reflector 12 will be described with reference to these drawings.

The reflector 12 is an example of a reflector for forming a single crystal having a diamond structure, such as single crystal Si. The reflector 12 defines a regular hexagonal opening in the center of the flat shield 51. On the lower surface of the shielding plate 51, three reflection blocks 53 are provided so as to surround the opening.
Is fixedly installed. The reflection block 53 is formed by a screw penetrating the through hole 57 and screwed into the screw hole 58.
It is fastened to the shield plate 51. As a result, an equilateral triangular opening 54 bordered by these reflection blocks 53 is formed immediately below the opening of the shielding plate 51.

The atomic flow falling from above is selectively shielded by the shield plate 51 and passes only through the regular hexagonal opening. In the reflection block 53, the slope 55 facing the opening 54 functions as a reflection surface that reflects the gas beam. As shown in the plan view of FIG. 7, the three slopes 55
Are selectively exposed in the regular hexagonal openings of the shielding plate 51. Therefore, the atomic flow falling from above passes through the opening 54 and directly enters the substrate 11 in the vertical direction.
And the second to second components that are obliquely incident on the substrate 11 by being reflected by each of the three slopes 55.
The fourth component is decomposed into a total of four components.

As shown in FIG. 7, an equilateral triangular opening 54 is formed.
Seen from above, the three corners of are aligned with every other corner of the regular hexagonal opening. That is, when viewed from above, the three slopes 55 are selectively exposed in three isosceles triangular regions whose two sides that are adjacent to each other in the regular hexagonal opening are equal sides. This prevents double reflection due to the plurality of slopes 55, and makes it possible to uniformly irradiate the substrate 11 with each atomic flow component. This will be described with reference to FIGS. 10 and 11.

FIG. 10 is a plan view of the reflection plate 12 similarly to FIG. 11 is a sectional view taken along the line AA shown in FIG. As shown in these figures, the atomic flow incident on the position (point B in the figure) on one slope 55 corresponding to the apex of the isosceles triangle is reflected, and then the apex of the opening 54 of the equilateral triangle facing the apex. (C in the figure
Point). Therefore, one side of the opening 54 and A-
If the intersection with the A cutting line is defined as D point, B on the slope 55
The atomic flow coming between −D is evenly distributed between D and C on the opening 54.

The same can be said for an atomic flow flying on an arbitrary cutting line E-E formed by shifting the AA cutting line in parallel. That is, the atomic flow coming from the outlet 9 is selectively supplied onto the slope 55 by the shielding plate 51, and as a result, the reflected atomic flows of the three components correspond to a region directly below the opening 54 on the substrate 11. Incident evenly on.

Further, as described above, all of the atomic flow passing through the regular hexagonal opening and supplied to one slope 55 is incident on the opening 54 and is incident on another adjacent slope 55. Absent. Therefore, there is no fear that the component in which the atomic flow is multiply reflected by the plurality of slopes 55 is incident on the substrate 11.

The inclination angle of the slope 55 is set to, for example, 55 ° as shown in FIG.

At this time, the atomic flow reflected by the slope 55 is incident on the substrate 11 located immediately below the opening 54 with an incident angle of 70 °. That is, the first component is vertically incident on the substrate 11, and the second to fourth components are
It has an incident angle of 0 ° and is incident in a three-fold symmetrical direction around the incident direction of the first component. At this time, the incident directions of these first to fourth components correspond to the four directions perpendicular to the four (111) planes, which are the densest planes of the Si single crystal.

<2-3. Operation of Device> Returning to FIG.
The operation of 00 will be described. As the reflector 12, FIG.
An example of forming a thin film of single crystal Si on the quartz substrate 11 using the reflection plate 12 shown in FIG. 9 and using polycrystalline SiO ₂ (quartz) as the substrate 11 will be taken up. Reflector 12
The slope angle of the slope 55 is set to 55 °.

Reaction gas supply pipes 13a, 13b, and 1
3c, SiH ₄ (silane) gas for supplying Si, which is the main material of single crystal Si, B ₂ H ₃ (diborane) gas for doping p-type impurities, and n-type impurities for doping PH ₃ (phosphine) gas is supplied. The inert gas introduced from the inert gas introducing pipe 7 is preferably Ne whose atomic weight is smaller than that of Si atoms.
Gas is selected.

By the action of the ECR ion generator 2, a Ne ⁺ ion flow and an electron flow are formed downward from the outlet 9. The distance from the outlet 9 to the reflector 12 is preferably set to be large enough to convert the Ne ⁺ ion flow into an almost neutral Ne atomic flow.

Therefore, similar to the apparatus 102 shown in FIG. 2, the plasma CVD reaction proceeds on the upper surface of the substrate 11 to grow an amorphous Si thin film. Further, by supplying diborane gas or phosphine gas while appropriately adjusting the flow rate thereof, the plasma CVD reaction by these gases also progresses at the same time, and B (boron) or P
A Si thin film containing (phosphorus) in a desired concentration is formed.

At the same time, the amorphous Si thin film which is being formed on the substrate 11 by the function of the reflection plate 12 is
The four components of the Ne atomic flow are irradiated. And these four
The incident direction of the component corresponds to the direction perpendicular to the four (111) planes of the Si single crystal as described above. Furthermore, the device 1
As in 02, the energy of the plasma formed by the ECR ion generator 2 is the energy of the Ne atoms reaching the substrate 11 is the Si produced by the irradiation of the Ne atoms.
Is set to be lower than the threshold energy (= 27 eV) in the sputtering of. Therefore, Bravais's law acts on the growing amorphous Si thin film. That is, the Si atoms in the amorphous Si are rearranged so that the plane perpendicular to the four components of the Ne atomic flow with which the amorphous Si is irradiated becomes the densest crystal plane.

That is, by the four (plural) Ne atomic flow components having mutually independent incident directions, (11
1) Since the direction of the plane is regulated, rearrangement of Si atoms forms single crystal Si having a single crystal orientation. That is, the amorphous Si thin film growing by plasma CVD is sequentially converted into a single crystal Si thin film having a uniform crystal orientation. As a result, a single crystal Si thin film having a uniform crystal orientation is finally formed on the substrate 11. The surface of this single crystal Si thin film is the (111) plane.

By supplying diborane gas or phosphine gas from the reaction gas supply pipe 13 at the same time as the silane gas, a p-type or n-type single crystal Si thin film to which B or P is added is formed. Further, it is possible to form an equiaxial n-type single crystal Si layer on, for example, a p-type single crystal Si layer by alternately supplying these reaction gases containing an impurity element.

As described above, in the apparatus 100, the plasma C
In the process of growing the Si thin film by VD, the conversion to a single crystal simultaneously proceeds sequentially. Therefore, the single crystal thin film can be formed much more efficiently than the conventional method. Moreover, since it is not necessary to add a seed crystal from the outside, the process is simple and the single crystal thin film can be reliably formed. Further, it is possible to form a single crystal Si thin film having a large film thickness at a low temperature. Since a single crystal thin film can be formed at a low temperature, for example, a new single crystal thin film can be formed on a substrate on which a predetermined device is already formed without changing the characteristics of this device. .

Further, in this apparatus 100, one ECR
Since one atomic flow supplied by the ion source 2 is separated into a plurality of components and each of them is irradiated to the substrate 11 from a plurality of directions, the same number of atomic flow components as the atomic flow components are irradiated to irradiate the plurality of atomic flow components. There is an advantage that it is not necessary to prepare the ECR ion source 2.

Further, since the reflector 12 is used, multiple scattering of the atomic flow by the plurality of slopes 55 does not occur. Therefore, the substrate 11 is not irradiated with the atomic flow from directions other than the predetermined four directions. Moreover, the reflector 12 is the substrate 11
Since the uniform irradiation of the atomic flow is realized, the irradiation of the atomic flow from the predetermined four directions is uniformly performed. Therefore, the single crystal Si thin film is uniformly formed on the substrate 11.

By the way, in the apparatus 100, a portion which may be irradiated with the Ne atomic flow or the Ne ion flow before being neutralized, for example, the reflector 12, the inner wall of the reaction container 1, the sample stage 10, etc. It is composed of a material that does not generate sputtering by irradiation, that is, a material having a threshold energy higher than the energy of the Ne ion flow. For example, it is composed of Ta, W, Pt, etc. shown in Table 1. Therefore, since the sputtering due to the irradiation of the Ne atomic flow or the Ne ion flow does not occur in these members, the contamination of the thin film by the material elements forming these members is prevented.

Further, the surface of these members which is irradiated with the Ne atomic flow, for example, the upper surface of the shielding plate 51 and the slope 55.
For example, the same effect can be obtained by coating a material having a high threshold energy such as Ta.

In the above, the apparatus 1 is exemplified by the formation of the Si thin film.
Although the configuration and operation of No. 00 have been described, the apparatus 100 can be used to form an axially oriented polycrystalline thin film other than Si. For example, a GaAs thin film can be formed. By appropriately changing the structure of the reflection plate 12 such as the inclination angle of the slope 55 and the number thereof, an arbitrary substance, crystal structure,
And a single crystal thin film having a crystal orientation can be formed. The surface of the reflection plate 12 is made of a material having a threshold energy higher than that of the material of the thin film.

The surface of the reflector 12 or the like may be made of the same material as the thin film, instead of being made of a material having a threshold energy higher than that of the thin film. For example, device 1
When 00 is configured as an apparatus for forming a single crystal thin film of Si, the surface of the reflection plate 12 or the like may be coated with Si. With this configuration, the reflector 1
Even if sputtering occurs in No. 2 etc., it has an advantage that it does not cause contamination of the Si thin film with a different element.

Further, the surface of the reflection plate 12 or the like may be made of a material containing an element heavier than the element forming the irradiated ion stream or atomic stream. By doing so,
With the irradiation of the ion stream or the atomic stream, there is an advantage that the elements forming the ion stream or the atomic stream hardly invade into the members. Therefore, deterioration of these members due to invasion of different elements is suppressed.

<2-4. Demonstration Data> Next, a test demonstrating that a single crystal thin film is formed by the above method will be described. FIG. 12 is experimental data showing an electron diffraction image of a sample in which a single crystal Si thin film is formed on a polycrystalline quartz substrate 11 based on the above method.

As a result of the experiment, as shown in FIG. 12, a diffraction spot having three-fold rotational symmetry was obtained. This demonstrates that the obtained sample was formed as single crystal Si with all crystal axes aligned. Since the single crystal Si thin film could be formed on the quartz substrate 11 having a polycrystalline structure having a higher atomic order than the amorphous structure, the single crystal thin film is formed on the substrate having an amorphous structure such as amorphous Si. It can be judged that it is naturally possible to form In addition, on a substrate having a single crystal structure that is equivalent to a structure in which the size of polycrystalline grains is enlarged,
A single crystal thin film oriented in a desired direction independent of the orientation direction of the single crystal of the substrate can be formed.

<3. Third Embodiment> Next, an apparatus according to a third embodiment of the present invention will be described. FIG. 13 is a front sectional view showing the overall structure of the apparatus of this embodiment. This device 1
01 is a single crystal formed on a substrate by forming a thin film of a predetermined substance having an amorphous structure or a polycrystalline structure on the substrate in advance and then converting this thin film into a single crystal thin film. A single crystal thin film forming apparatus configured for the purpose of forming a thin film.

As shown in FIG. 13, the structure of this apparatus 101 is that the reaction gas supply pipe 13 is not provided in the apparatus 1
Characteristically different from 00. Further, the sample table 10 is provided with a heater (not shown), and by the action of this heater, the substrate 11 can be heated and kept at an appropriate high temperature.

The basic operation of the apparatus 101 will be described with reference to FIG. 6 to 9 as the reflector 12.
An example in which the reflection plate 12 shown in FIG. 2 is used, a polycrystalline quartz substrate is used as the substrate 11, and a single crystal Si thin film is formed on the quartz substrate 11 will be taken up. On the quartz substrate 11, C
It is assumed that the polycrystalline Si thin film is previously formed by using a known method such as VD (chemical vapor deposition method).

First, the substrate 11 is used as the sample table 10 and the reflection plate 12.
Install between. The heater provided in the sample table 10 is the substrate 1
Hold 1 at a temperature of 550 ° C. Since this temperature is lower than the crystallization temperature of silicon, single crystal Si once formed does not revert to polycrystalline Si under this temperature. At the same time, at this temperature, if a seed crystal is present, polycrystalline Si is a single crystal S with the seed crystal as a nucleus.
The temperature is high enough to grow to i.

For the same reason as described in the first embodiment, the Ne atomic flow is selected as the atomic flow to be irradiated on the substrate 11, and the Ne formed by the ECR ion source 2 is also selected.
The energy of plasma is set so that the energy of Ne atoms reaching the substrate 11 is lower than the threshold energy in Si sputtering. Further, due to the function of the reflection plate 12, the polycrystalline Si thin film formed on the substrate 11 is irradiated with the four components of the Ne atomic flow. And, the incident directions of these four components are
It corresponds to the direction perpendicular to the four (111) planes of the Si single crystal.

Therefore, due to the Bravay's law acting near the surface of the polycrystalline Si thin film, the surface perpendicular to the incident direction of the four components of the Ne atomic flow irradiated on the polycrystalline Si thin film becomes the densest surface. Thus, the Si atoms near the surface of the polycrystalline Si thin film are rearranged. That is, the direction of the (111) plane in the vicinity of the surface is regulated by the components of four (plural) Ne atomic flows having mutually independent incident directions. Is converted into a single-crystal Si layer having a uniform structure.

The temperature of the polycrystalline Si thin film is 5 as described above.
The temperature is adjusted to 50 ° C., that is, within the range suitable for growing the seed crystal. Therefore, the single crystal Si layer formed on the surface of the polycrystalline Si thin film functions as a seed crystal, and the single crystal Si layer grows toward the deep portion of the polycrystalline Si thin film.
Then, the entire region of the polycrystalline Si thin film is converted into the single crystal Si layer. In this way, a single crystal Si layer having a uniform crystal orientation is formed on the quartz substrate 11.

The single crystal Si layer formed on the surface of the polycrystalline Si thin film by irradiation and functioning as a seed crystal is a polycrystalline S layer.
Since it is formed by converting the i thin film, it is integrated with the layer of polycrystalline Si remaining on the deep side thereof. That is, the contact between the layer of polycrystalline Si and the seed crystal is perfect. Therefore, the solid phase epitaxial growth in the vertical direction proceeds well. Further, since the seed crystal and the single crystal Si formed by solid phase epitaxial growth are both single crystals of the same substance having the same crystal orientation, it is not necessary to remove the seed crystal after forming the single crystal Si thin film. . Further, since the single crystal Si thin film is formed by solid phase epitaxial growth in the vertical direction, the desired single crystal Si can be efficiently formed in a short time as compared with the conventional technique of growing in the horizontal direction.
A thin film can be obtained.

By the way, like the device 100, the device 10
In No. 1 as well, Ne atom flow or Ne before neutralization
At least the surface of the portion that may be irradiated with the ion stream, for example, the reflection plate 12, the inner wall of the reaction container 1, the sample table 10, etc., is a material that does not generate sputtering by irradiation, for example, shown in Table 1. Ta,
It is composed of W, Pt, and the like. Therefore, since the sputtering due to the irradiation of the Ne atomic flow or the Ne ion flow does not occur in these members, the contamination of the thin film by the material elements forming these members is prevented.

In the above, the apparatus 1 is exemplified by the formation of the Si thin film.
Although the configuration and operation of No. 01 have been described, the apparatus 101 can be used to form an axially oriented polycrystalline thin film other than Si. For example, a GaAs thin film can be formed. Also in this case, the surface of the reflection plate 12 is made of a material having a higher threshold energy than the material of the thin film. Further, as in the device 100, the surface of the reflection plate 12 or the like may be made of the same material as the thin film, instead of being made of a material having a higher threshold energy than the material of the thin film. Furthermore, the surface of the reflector 12 or the like may be made of a material containing an element that is heavier than the elements that make up the irradiated ion or atomic flow.

<4. Fourth Embodiment> Next, an apparatus according to a fourth embodiment of the present invention will be described. FIG. 14 is a front sectional view showing the overall structure of the apparatus of this embodiment. This device 1
In No. 03, a thin film of a predetermined substance having an amorphous structure or a polycrystalline structure is formed on a substrate in advance, and then this thin film is converted into an axially oriented polycrystalline thin film, so that the thin film is formed on the substrate. An apparatus for forming an axially oriented polycrystalline thin film, which is configured for the purpose of forming an axially oriented polycrystalline thin film.

As shown in FIG. 14, the device 102 is
It has a structure in which the reflector 12 is removed from the device 101 (FIG. 13). Further, similarly to the apparatus 101, the sample table 10 is provided with a heater (not shown), and the action of this heater can heat the substrate 11 and maintain it at an appropriate high temperature.

The basic operation of the apparatus 103 will be described with reference to FIG. A polycrystalline quartz substrate is used as the substrate 11, and an axially oriented polycrystalline Si is formed on the quartz substrate 11.
Take an example of forming a thin film. It is assumed that a polycrystalline Si thin film is previously formed on the quartz substrate 11 by using a known method such as CVD (chemical vapor deposition method). This polycrystalline Si thin film may have a normal polycrystalline structure in which each crystal grain is oriented in an arbitrary direction.

First, the substrate 11 is mounted on the sample table 10. The heater provided in the sample table 10 holds the substrate 11 at a temperature of 550 ° C. Since this temperature is lower than the crystallization temperature of silicon, under this temperature, the axially oriented polycrystalline Si that has been formed once becomes the original ordinary polycrystalline Si.
There is no going back to. At the same time, if a seed crystal is present, this temperature is the same as that of ordinary polycrystalline Si with this seed crystal as a nucleus.
Is high enough to grow into axially oriented polycrystalline Si.

The ion flow passing through the outlet 9 becomes an atomic flow and is vertically incident on the surface of the substrate 11. For the same reason as described in the first embodiment, the Ne atomic flow is selected as the atomic flow to be applied to the substrate 11, and the ECR ion source 2 is used.
The energy of Ne plasma formed by is set so that the energy of Ne atoms reaching the substrate 11 is lower than the threshold energy in Si sputtering.

For this reason, the Brave's law acts in the vicinity of the surface of the polycrystalline Si thin film so that the surface perpendicular to the incident direction of the Ne atomic flow with which the polycrystalline Si thin film is irradiated becomes the densest surface. S near the surface of the polycrystalline Si thin film
i atoms rearrange. That is, the layer in the vicinity of the surface of the polycrystalline Si thin film is converted into an axially oriented polycrystalline Si layer whose uniaxial direction is aligned so that the (111) plane is along the surface.

The temperature of the polycrystalline Si thin film is 5 as described above.
The temperature is adjusted to 50 ° C., that is, within the range suitable for growing the seed crystal. Therefore, the axially oriented polycrystalline Si layer formed on the surface of the ordinary polycrystalline Si thin film functions as a seed crystal, and the axially oriented polycrystalline Si layer grows toward the deep portion of the ordinary polycrystalline Si thin film. Then, the entire region of the polycrystalline Si thin film is converted into an axially oriented polycrystalline Si layer. In this way, an axially oriented polycrystalline Si thin film in which (111) is oriented along the surface is formed on the quartz substrate 11.

Instead of forming a normal polycrystalline Si thin film on the substrate 11 in advance, an amorphous Si thin film may be formed in advance and then provided to the apparatus 103 to form an axially oriented polycrystalline Si thin film. You can

By the way, similar to the device 102, the device 10
3 also, Ne atom flow or Ne before neutralization
At least the surface of the portion that may be irradiated with the ion stream, for example, the inner wall of the reaction vessel 1, the sample stage 10 or the like, is made of a material that does not generate sputtering by irradiation, such as Ta, W, or the like shown in Table 1. It is composed of Pt or the like. Therefore, since the sputtering due to the irradiation of the Ne atomic flow or the Ne ion flow does not occur in these members, the contamination of the thin film by the material elements forming these members is prevented.

The above is an example of the apparatus 1 using the formation of the Si thin film as an example.
Although the configuration and operation of No. 03 have been described, the apparatus 103 can be used to form an axially oriented polycrystalline thin film other than Si. For example, a GaAs thin film can be formed. Also in this case, the surface of the sample table 10 is made of a material having a higher threshold energy than the material of the thin film. Further, as in the apparatus 102, the surface of the sample table 10 or the like may be made of the same material as the thin film, instead of being made of a material having a higher threshold energy than the material of the thin film. Further, the surface of the sample table 10 or the like may be made of a material containing an element that is heavier than the elements that make up the irradiated ion stream or atomic stream.

<5. Fifth Embodiment> Next, a fifth embodiment will be described. In the method of this embodiment, after forming an axially oriented polycrystalline thin film on a substrate, it is converted into a single crystalline thin film by irradiating with an atomic flow from a plurality of directions, whereby the single crystalline thin film is formed on the substrate 11. To form.
For that purpose, for example, after forming the axially oriented polycrystalline thin film on the substrate 11 by using the device 102 of the first embodiment, this thin film is converted into a single crystal thin film by using the device 101 of the third embodiment. Good to do.

Alternatively, using the apparatus 100 of the second embodiment, the reaction gas is first supplied and the atomic flow irradiation is performed except for the reflection plate 12 to form an axially oriented polycrystalline thin film, and thereafter, The thin film is converted into a single crystal thin film by installing the reflection plate 12 in the apparatus 100 and heating the substrate 11 while performing the irradiation of the atomic flow, and as a result, the single crystal thin film is formed on the substrate 11. Good.

Alternatively, a thin film having an amorphous or ordinary polycrystal structure is previously formed on the substrate 11 by CVD or the like, and then the film is converted into an axially oriented polycrystal thin film using the device 103, and then the device is used. The single crystal thin film may be converted to a single crystal thin film using 101, and as a result, the single crystal thin film may be formed on the substrate 11.

As described above, in the method of this embodiment, the axially oriented polycrystalline thin film is formed in advance before the single crystal thin film is formed on the substrate 11. Therefore, even if there is a portion where it is difficult to form a single crystal thin film on the substrate 11, an axially oriented polycrystalline thin film having characteristics close to those of the single crystal thin film is formed in that portion, so that the mechanical and mechanical properties of the thin film are reduced. There is an advantage that the electrical characteristics do not noticeably deteriorate. That is, it is possible to obtain a thin film having a reasonably good characteristic without performing the step of forming a single crystal thin film with precision.

This is because the substrate 11 has a three-dimensional shape instead of a flat plate, or a shield having a thickness is formed on the surface of the substrate 11.
It is particularly effective when it is difficult to uniformly irradiate a predetermined region of 1 with atomic flows from a plurality of directions. 15 to 17 show these examples.

FIG. 15 schematically shows a state in which the surface of a sample 70 in which an axially oriented polycrystalline Si thin film 71 is previously formed on a substrate 11 having a three-dimensional shape is being irradiated with a Ne atomic flow from two directions. It is sectional drawing shown in figure. 14
, The sample 70 has a three-dimensional shape, and as a result, the sample 70 itself serves as a shield for the atomic flow.
As a result, in a specific region of the axially oriented polycrystalline Si thin film 71, the Ne atomic flow irradiation is performed only from one direction.
Irradiation from the direction is not realized.

16 and 17 schematically show a step of selectively forming a single crystal Si thin film on the substrate 11 using the mask material 72 in the process of manufacturing a thin film semiconductor integrated circuit. It is sectional drawing shown. An amorphous or ordinary polycrystalline Si thin film 74 is previously formed on the substrate 11 by CVD or the like. After that, by using the device 103, the Ne atom flow is vertically irradiated to the upper surface of the Si thin film 74 through the opening of the mask material 72 made of SiO ₂ or the like, so that the axis is directly below the opening of the mask material 72. An oriented polycrystalline Si thin film 71 is selectively formed (FIG. 16).

Next, using the apparatus 101, the mask material 7
2 through the opening formed on the upper surface of the Si thin film 74.
The axially oriented polycrystalline Si thin film 71 is converted into a single crystal Si thin film by irradiating the atomic flow from a plurality of directions (FIG. 1).
7). At this time, since the mask material 72 has a constant thickness, the vicinity of the edge of the opening of the mask material 72 is not sufficiently irradiated with the Ne atomic flow from a plurality of directions. Therefore, it is difficult to form a single crystal Si thin film near the edge of the opening of the mask material 72. However, even if the single crystal Si thin film is not formed, at least the axially oriented polycrystalline Si thin film is formed, so that deterioration in electrical characteristics such as carrier mobility can be minimized.

In the method of this embodiment, one of a plurality of incident directions of the atomic flow irradiated for conversion into a single crystal thin film is irradiated in advance for forming an axially oriented polycrystalline thin film. It is desirable to match the incident direction of the atomic flow. This is because the conversion to the single crystal thin film is performed without changing the common uniaxial direction in the axially oriented polycrystalline thin film, so that the conversion process to the single crystal thin film proceeds smoothly in a short time.

<6. Sixth Embodiment> Next, a sixth embodiment will be described.

<6-1. Structure of Device> FIG. 18 is a front sectional view showing the entire structure of the device of this embodiment. This device 150 includes an amorphous thin film or a polycrystalline thin film (including an axially oriented polycrystalline thin film) previously formed on the substrate 11.
It is configured for the purpose of forming a single crystal thin film on a substrate by converting it into a single crystal thin film.

This device 150 is characteristically different from the device 101 in that a reflecting unit 160 is installed instead of the reflecting plate 12. The reflection unit 160 is for generating a plurality of atomic flow components that are incident on the substrate 11 at a plurality of predetermined incident angles, is installed on the sample stage 10, and is located above the substrate 11. It is installed to do. The sample table 10 includes a heater (not shown) that can heat the substrate 11 and maintain it at an appropriate high temperature.

<6-2. Structure and Operation of Reflecting Unit> Here, the structure and operation of the reflecting unit 160 will be described. 1 and 19 respectively show a reflection unit 160.
FIG. 3 is a front sectional view and a plan sectional view showing the configuration of FIG. The reflection unit 160 illustrated in these FIG. 1 and FIG.
Is a reflection unit for forming a single crystal having a diamond structure, such as single crystal Si. This reflection unit 1
60 is arranged immediately below the ion extraction outlet of the ECR ion source 2, that is, downstream of the downward atomic flow generated by the ECR ion source 2.

A shield plate 104 capable of selectively blocking the atomic flow supplied from the ECR ion source 2 is horizontally provided above the reflection unit 160. The reflection unit 16 is arranged so that the distance from the outlet 9 to the shielding plate 104 is a distance sufficient to convert the ion flow output from the ECR ion source 2 into a neutral atomic flow, for example, 14 cm or more.
0 is set. That is, almost neutral atomic flow reaches the shield plate 104. The shield plate 104 is provided with an opening 112 so as to be rotationally symmetrical four times around the central axis of the atomic flow from the ECR ion source 2. The atomic flow from the ECR ion source 2 flows only downward through these openings 112.

A reflection block 106 is installed immediately below the shielding plate 104. The reflection block 106 has a cone of four-fold rotational symmetry, the symmetry axis of the cone coincides with the central axis of the atomic flow, and the four side surfaces of the cone are located immediately below the four openings 112, respectively. ing. These sides are not necessarily flat, but generally curved. These four side surfaces function as reflecting surfaces that reflect the atomic flow. That is, the atomic flow that has passed through the opening 112 is reflected by the four side surfaces of the reflection block 106, whereby a four-component atomic flow that travels away from the central axis is obtained.

Each of these four-component atomic flows is a divergent beam whose beam cross section expands two-dimensionally (planarly). Then, these four components pass through the rectifying member (rectifying means) 108 so that their traveling directions are accurately aligned in the desired directions, and then enter the four reflecting plates 110, respectively. The rectifying member 108 is a member that functions to adjust the direction of the atomic flow radially from the side surface of the reflection block 106 toward the reflection plate 110, and can be configured by a conventionally known technique.

These four reflectors 110 are provided around the substrate 11 to be irradiated and in addition to the reflection block 106.
Are arranged four times in rotational symmetry about the axis of symmetry (Fig. 1
In FIG. 9, only one reflection plate 110 is shown to represent the others.
Further, FIG. 19 shows only the atomic flow that is incident on and reflected by the upper half of one reflection plate 110, and the illustration of the atomic flow that is incident and reflected on the lower half is omitted. ). The component of the atomic flow incident on the reflector 110 is reflected again by the reflecting surface. The reflection surface of the reflection plate 110 has an appropriate concave shape. Therefore, as a result of the diverging component of the atomic flow being reflected by this reflecting surface, it is appropriately focused and becomes a parallel beam, and moreover, it uniformly falls on the entire upper surface of the substrate 11. Moreover, parallel beams are incident on the upper surface of the substrate 11 from four directions at an incident angle of 55 ° (FIG. 1), for example.

<6-3. Operation of Device 150> The operation of the device 150 will be described with reference to FIG. An example in which an amorphous or polycrystalline SiO ₂ (quartz) substrate is used as the substrate 11 and a single crystal Si thin film is formed on the quartz substrate 11 will be taken up. On the substrate 11, for example, CVD
A polycrystalline Si thin film (including an axially oriented polycrystalline Si thin film) is previously formed using a method such as (chemical vapor deposition).

First, the substrate 11 is mounted between the sample table 10 and the reflection unit 160. The heater provided in the sample table 10 includes a sample, that is, the substrate 11 and the polycrystalline Si thin film,
Hold at a temperature of 50 ° C. Similar to the device 101, as the gas introduced from the inert gas introducing pipe 7, an inert Ne gas having an atomic weight smaller than that of Si atoms is preferably selected.

By the action of the ECR ion source 2, the Ne atomic flow is supplied to the reflection unit 160, and as a result, the substrate 1
The light is incident on the entire upper surface of 1 from four directions with an incident angle of 55 °, for example. In this case, the incident directions of these four component Ne atomic flows correspond to the four independent close-packed crystal planes of the Si single crystal to be formed, that is, the four directions perpendicular to the (111) plane. Further, as in the device 101, the energy of the plasma formed by the ECR ion source 2 is set so that the energy of Ne atoms reaching the substrate 11 becomes lower than the threshold energy in the sputtering of Si by the irradiation of Ne atoms. Is set.

Therefore, as a result of the Brave's law acting on the polycrystalline Si thin film, the plane perpendicular to the incident direction of the Ne atomic flow with which the polycrystalline Si thin film is irradiated becomes the densest crystal plane.
Si atoms near the surface of the polycrystalline Si thin film are rearranged. That is, the layer near the surface of the polycrystalline Si thin film is converted into a single crystal Si layer having a uniform crystal orientation.

The temperature of the polycrystalline Si thin film is 5 as described above.
The temperature is adjusted to 50 ° C., that is, within the range suitable for growing the seed crystal. Therefore, the single crystal Si layer formed on the surface of the polycrystalline Si thin film functions as a seed crystal, and the single crystal Si layer grows toward the deep portion of the polycrystalline Si thin film.
Then, after a certain period of time, the entire region of the polycrystalline Si thin film is converted into a single crystal Si layer. In this way, the substrate 1
A single crystal Si layer having a uniform crystal orientation is formed on the surface of 1.
The crystal orientation of the formed single crystal Si thin film is such that the (100) plane is along the surface.

The incident angle of 55 ° shown in FIG. 1 is, of course, an example, and can be arbitrarily determined from the desired crystal structure of the single crystal thin film by appropriately changing the shape and direction of the reflecting plate 110. It is possible to make a parallel beam incident on the substrate 11 with an incident angle of. Further, since a divergent beam is generated by the reflection block 106, the distance from the symmetry axis of the reflection block 106 of the reflection plate 110 is
By appropriately adjusting according to the size of the substrate 11, it is possible to uniformly irradiate a parallel beam onto the vast substrate 11.

As described above, according to the apparatus 150, the desired incident angle can be obtained on the entire surface of the substrate 11 having a far larger area than the cross section of the beam supplied from the ECR ion source 2 without scanning the substrate 11. Moreover, the atomic flow can be uniformly irradiated. That is, it is possible to uniformly and efficiently form a desired single crystal thin film on the large-area substrate 11.

Further, by individually adjusting the opening areas of the four openings 112 provided on the shielding plate 104, the amounts of the four component beams passing through these openings 112 can be individually adjusted. It is possible. Therefore, it is possible to optimally set the amount of each of the four component beams irradiated onto the upper surface of the substrate 11 from a plurality of directions. For example, the beam amounts of the four components can be made uniform. Therefore, it is possible to efficiently form a high quality single crystal thin film.

As in the case of the apparatus 101, at least the surface of each member of the reflection unit 160, such as the reflection block 106, the rectifying member 108, and the reflection plate 110, which is irradiated with the atomic flow, is formed by sputtering rather than the thin film to be formed. It may be made of a material such as Ta, W, or Pt having a high threshold energy. Also, like the device 101,
The surfaces of the respective members of the reflection unit 160 may be made of the same material as the thin film, instead of being made of a material having a higher threshold energy than the material of the thin film. Furthermore, the surfaces of the respective members of the reflection unit 160 may be made of a material containing an element that is heavier than the elements that make up the irradiated ion stream or atomic stream.

<7. Seventh Embodiment> Next, an apparatus according to a seventh embodiment of the present invention will be described. FIG. 20 is a front sectional view showing the overall structure of the beam irradiation apparatus of this embodiment.
Like the device 100, this device 151 sequentially forms a growing polycrystalline thin film into a single crystalline thin film by forming a polycrystalline thin film on the substrate 11 and simultaneously irradiating it with an atomic flow. It is configured to do.

Therefore, in the apparatus 151, the reaction gas supply pipe 13 communicates with the reaction chamber 8 as in the apparatus 100. Through this reaction gas supply pipe 13, plasma CVD
By this, a reaction gas for forming a thin film of a predetermined substance on the substrate 11 is supplied. In the example of FIG. 20, three reaction gas supply pipes 13a, 13b, and 13c are provided. Other structural features are similar to the device 150.

The device 151 operates as follows. Sixth
As described in the examples, here also, an example of using polycrystalline SiO ₂ (quartz) as the substrate 11 and forming a thin film of single crystal Si on the substrate 11 will be taken up. SiH ₄ (silane) gas for supplying Si, which is the main material of single-crystal Si, B ₂ H ₃ (diborane) gas for doping p-type impurities, from each of the reaction gas supply pipes 13a, 13b, and 13c, And PH for doping n-type impurities
₃ (phosphine) gas is supplied. Further, Ne gas is introduced into the plasma chamber 4 from the inert gas introducing pipe 7.

The plasma CVD reaction proceeds on the upper surface of the substrate 11 by the reaction gas supplied from the reaction gas supply pipe 13 and the Ne ⁺ ion flow or the Ne atomic flow generated by the ECR ion source 2, and as a result, the amorphous plasma A structured Si thin film grows. The Ne atomic flow flowing downward from the ECR ion source 2 is being formed on the upper surface of the substrate 11 by the function of the reflection unit 160.
The light is incident on the entire surface of the thin film from four directions having an incident angle of 55 °, for example. The energy of the plasma formed by the ECR ion source 2 is similar to that of the device 100.
The incident energy of the component is set to be lower than the threshold energy for Si. Therefore, as a result of the Brave's law acting on the growing amorphous Si thin film, the growing amorphous Si thin film is sequentially converted into a single crystal Si thin film having a uniform crystal orientation. As a result, single crystal Si having a single crystal orientation is formed on the substrate 11.

Since the reflection unit 160 is also used in this apparatus 151, a desired area can be formed on the entire surface of the substrate 11 having a far larger area than the cross section of the beam supplied by the ECR ion source 2 without scanning the substrate 11. It is possible to irradiate the atomic flow uniformly with an incident angle. That is, it is possible to uniformly and efficiently form a desired single crystal thin film on the large-area substrate 11.

<8. Eighth Embodiment> Next, an apparatus according to an eighth embodiment of the present invention will be described. 21 to 23 are a perspective view, a plan view, and a front view of the apparatus of this embodiment, respectively. The configuration and operation of the apparatus of this embodiment will be described with reference to FIGS. 21 to 23.

In this apparatus 200, the ECR ion source 2 is installed horizontally and supplies a gas beam in the horizontal direction parallel to the surface of the substrate 11 placed horizontally. The reflection unit 260 is inserted in the path through which the gas beam supplied from the ECR ion source 2 reaches the upper surface of the substrate 11.

In the reflection unit 260, a reflection block 206, a shielding plate 204, a rectifying member 208, and a reflection plate 210 are sequentially arranged along the path of the gas beam. The reflection block 206 has a prismatic shape whose central axis is vertical, and is rotationally driven around this central axis. The distance from the outlet 9 to the reflection block 206 is set to be a distance sufficient for converting the ion flow output from the ECR ion source 2 into a neutral atomic flow, for example, 14 cm or more. Therefore, almost neutral atomic flow reaches the reflection block 206.

FIG. 24 is a plan view for explaining the operation of the reflection block 206. As shown in FIG. 24,
The atomic flow incident on the reflection block 206 is scattered in multiple directions in the horizontal plane by the rotation of the reflection block 206. That is, the reflection block 206 substantially generates a divergent beam whose beam cross section is linear or band-shaped, that is, substantially one-dimensionally expanded as the beam travels.

The shield plate 204 is a part of the diverging atomic flow.
Only components having a scattering angle in a specific range are selectively passed. The atomic flow that has passed through the shielding plate 204 is rectified by the flow regulating member 208
By passing through, the traveling direction is precisely aligned. The rectifying member 208 is configured similarly to the rectifying member 108. As shown in FIG. 24 and the like, the reflection block 206 may have another prismatic shape such as a triangular prism or a hexagonal prism instead of the square prism shape.

Returning to FIGS. 21 to 23, the flow regulating member 208
The atomic flow that has passed through is incident on the strip-shaped reflector 210 in the horizontal direction. The reflection surface of the reflection plate 210 has an appropriate concave shape. Therefore, as a result of the diverging component of the atomic flow being reflected by this reflecting surface, it is appropriately focused and becomes a parallel beam, which falls on the upper surface of the substrate 11 in a linear or strip shape. Moreover, this parallel beam is incident on the upper surface of the substrate 11 at an incident angle of, for example, 35 °. From the reflection block 206 arranged along the path of the atomic flow to the reflection plate 21.
Two sets of members up to 0 are installed as shown in FIG. As a result, the atomic flow is incident on the substrate 11 from the two opposing directions at an incident angle of 35 °.

Since the atomic flow is scattered by the reflection block 206 so as to diverge in a substantially one-dimensional manner, it is supplied from the ECR ion source 2 by setting a sufficient distance between the reflection block 206 and the reflection plate 210. It is possible to irradiate a parallel beam to a linear or band-shaped region having a width much wider than the beam diameter.

The apparatus 200 includes a sample table (not shown) on which the substrate 11 is placed, and this sample table can be moved horizontally by a horizontal moving mechanism (not shown). Along with the horizontal movement of the sample table, the substrate 11 moves in parallel along a direction (direction intersecting) perpendicular to the linear or band-shaped region on which the atomic flow enters. Thus, by scanning the substrate 11, the irradiation of the atomic flow over the entire area of the substrate 11 is realized. Since the substrate 11 is scanned, it is possible to uniformly irradiate the vast substrate 11 with the atomic flow.

The apparatus 200 is provided with the reaction gas supply pipe 13 similarly to the apparatus 100, so that the substrate 1
It is also possible to form a thin film of a predetermined substance on No. 1 while sequentially converting this thin film into a single crystal. Also, the device 101
Similarly, the sample stage may be provided with a heater so that a thin film of a predetermined substance previously deposited on the substrate 11 is converted into a single crystal thin film. Since the incident directions of the two atomic flows are opposite to each other and the incident angles are both 35 °, the crystal orientation of the single crystal thin film formed on the substrate 11 is (110). The faces are oriented along the surface.

By changing the positional relationship between the reflection units 260 and the angle of the reflection plate 210,
It is possible to form a single crystal thin film in which the crystal orientation is oriented so that the crystal planes other than the (110) plane are along the surface of the thin film. For example, in each reflection unit 260, two or more sets of reflection units 260 are arranged so that the central axes of the atomic flows from the reflection block 206 toward the reflection plate 210 form an angle of 90 ° or 180 °, and The crystal orientation is oriented so that the (100) plane is along the surface by setting the shape and orientation of the reflection plate 210 such that the incident angles of the atomic flows entering the substrate 11 from the reflection unit 260 are all 55 °. The single crystal thin film can be formed.

In each of the reflection units 260, two of the three sets in which the central axes of the atomic flow from the reflection block 206 toward the reflection plate 210 are displaced by 120 ° are arranged.
By disposing more than one set of reflecting units 260 and by setting the shape and orientation of the reflecting plate 210 such that the incident angles of the atomic streams entering the substrate 11 from the respective reflecting units 260 are all 70 °, A single crystal thin film in which the crystal orientation is oriented so that the (111) plane is along the surface can be formed.

Further, similar to the device 150, at least the surface of each member of the reflection unit such as the reflection block 206, the rectifying member 208, the reflection plate 210, etc. of the reflection unit 260 which receives the irradiation of the atomic flow is formed by sputtering rather than the thin film to be formed. It may be made of a material such as Ta, W, or Pt having a high threshold energy. The surface of each member of the reflection unit 260 may be made of the same material as the single crystal thin film to be formed. Furthermore, the surfaces of the respective members of the reflection unit 260 may be made of a material containing an element that is heavier than the elements that make up the irradiated ion stream or atomic stream.

<9. Ninth Embodiment> Next, an apparatus according to a ninth embodiment of the present invention will be described. FIG. 25 is a perspective view showing the structure of the apparatus of this embodiment. As shown in FIG. 25, the device 300 includes a reflection unit 360. The reflection unit 360 includes a reflection block 206.
The reflection unit 260 is characteristically different in that an electrostatic electrode 306 is provided instead of the reflection unit 260. Instead of the neutral atomic flow, the ion flow is incident on the electrostatic electrode 306. That is, the distance from the outlet 9 to the electrostatic electrode 306 is E
The ion flow output from the CR ion source 2 is set to be sufficiently short so that it is hardly converted into a neutral atomic flow and is incident on the electrostatic electrode 306 as it is.

An AC power supply 307 is attached to the electrostatic electrode 306. The AC power supply 307 supplies a variable voltage, which is formed by superimposing an AC voltage on a constant bias voltage, to the electrostatic electrode 306. As a result, the ion flow incident on the electrostatic electrode 306 is scattered in multiple directions in the horizontal plane by the action of the varying electrostatic field.

As described above, in this apparatus 300, the fluctuating voltage supplied by the AC power source 307 realizes the scattering of the ion flow, so that the scattering of the ion flow in the unnecessary direction shielded by the shielding plate 204 can be facilitated. Can be suppressed. That is, there is an advantage that the ion flow supplied by the ECR ion source 2 can be effectively used for irradiation of the substrate 11. Further, by setting the waveform of the fluctuating voltage supplied from the AC power supply 307 to, for example, a triangular wave, the ion current can be scattered in each scattering direction with higher uniformity.

<10. Modifications> (1) In the sixth and seventh embodiments, the shape of the reflection block 106 and the arrangement of the reflection plate 110 are selected to be four-fold rotational symmetry, but other rotational symmetry, for example, two-fold rotational symmetry, or It is also possible to select three-fold rotational symmetry. That is, it is possible to arbitrarily select the number of atomic flow components incident at different incident angles according to the desired crystal structure of the single crystal thin film. The shape of the reflection block 106 may be selected to be rotationally symmetrical such as a cone. At this time, the substrate 1
One reflection block 106 is sufficient regardless of the number of incident directions to 1. As described above, in the device of the present invention, it is possible to form a single crystal thin film having a crystal structure other than the diamond structure, and even if the crystal structures are the same, the single crystal thin films having various crystal orientations are formed. Can also be formed. Also, since it can correspond to any crystal structure,
The material forming the single crystal thin film is not limited to Si, and a semiconductor single crystal thin film such as GaAs or GaN can be formed.

(2) In the sixth and seventh embodiments, the rectifying member 108 that adjusts the direction of the atomic flow is reflected by the reflection block 106 instead of being inserted in the path of the atomic flow. It may be inserted in the path of the atomic flow reflected by the plate 110 and directed to the substrate 11. Moreover, you may interpose in both these paths.

Further, an apparatus which does not include the flow regulating member 108 may be constructed. However, the device including the rectifying member 108 has an advantage that the incident direction of the component of the atomic flow to the substrate 11 is precisely determined without strictly setting the shapes and arrangements of the reflection block 106 and the reflection plate 110. .

The above is the eighth and ninth embodiments.
The same applies to the rectifying member 208 in the embodiment.

(3) In the first to eighth embodiments, the ECR ion source 2 is replaced by another beam source which produces a neutral atomic or molecular flow or a neutral radical flow. You may. Beam sources that generate such neutral atomic flow and radical flow are already on the market. Since a beam of neutral atoms or radicals can be obtained by using this beam source, as in the case of using an ECR ion source, a means for neutralizing the ion flow is not required, and an insulating It is possible to form a single crystal thin film on the substrate 11.

(4) In the first to ninth embodiments, instead of the ECR ion source 2, another ion source such as a cage type or Kauffman type may be used. However, the ion flow generated at this time tends to be diffused by the repulsive force due to the static electricity between the ions, and the directivity tends to be weakened.Therefore, a means for neutralizing the ions or an ion flow such as a collimator is used. It is desirable to insert a means for enhancing directivity in the path of the ion flow.

In particular, when an electrically insulating substrate is used as the substrate 11, in order to prevent the accumulation of charges on the substrate 11 and the cessation of irradiation, a means for neutralizing ions is provided in the ion flow path. Interposition is desirable. On the other hand, the apparatus of the embodiment provided with the ECR ion source has an advantage that the neutral atomic flow can be easily obtained without using a means for neutralizing the ion flow, and can be obtained in a form close to parallel flow. .

When the means for neutralizing ions is installed in the apparatus of the ninth embodiment, it is installed downstream of the electrostatic electrode 306.

(5) Each of the beam irradiation devices shown in the above embodiments is not limited to a device for forming a single crystal thin film, but for other purposes, a beam of gas is emitted from a plurality of directions. It is also possible to implement the device for irradiation. In particular, the devices shown in the sixth to ninth examples are suitable for use for the purpose of irradiating a vast substrate with a gas beam uniformly and from a plurality of directions.

(6) In the first to ninth embodiments, when the thin film to be formed contains N (nitrogen element) which is a gas at room temperature, such as GaN, nitrogen is used as the gas to be irradiated. Gas may be used. Then, even if the gas used for irradiation remains in the thin film, there is no possibility that the characteristics of the thin film deteriorate as impurities.

[0164]

<Effect of the invention according to claim 1> In the apparatus of the present invention, the beam of gas for irradiating the surface to be irradiated of the sample is provided with a single beam source and reflecting means arranged in the path. Therefore, it is possible to irradiate the gas beam from a plurality of different predetermined directions without using a plurality of beam sources. Moreover, since the beam is reflected by the first reflector so as to diverge two-dimensionally in a plurality of directions, and is made into a substantially parallel beam by the second reflector, the beam is more than the cross section of the beam supplied by the beam source. It is possible to uniformly irradiate a vast irradiation surface with a beam. Therefore, by irradiating a wide substrate on which a thin film of a predetermined substance is formed on the surface or a wide substrate on which a thin film of a predetermined substance is growing on the surface with a beam of gas using this device,
A single crystal thin film of the substance can be formed widely and efficiently without scanning the substrate.

<Effect of the Invention According to Claim 2> In the apparatus of the present invention, since the rectifying means is installed in the path of the beam from the first reflector to the sample, the beam is directed in a predetermined direction. Can be aligned. Therefore, strict accuracy is not required for the shape and arrangement of the reflectors, so that the device can be easily configured.

<Effect of the Invention According to Claim 3> In the apparatus of the present invention, the beam distribution adjusting means adjusts the respective beam amounts of the plurality of components reflected by the first reflector, whereby the plural directions are obtained. It is possible to adjust the amount of each beam of a plurality of components that is incident on the surface to be illuminated. For this reason,
Since the beam amounts of the respective components incident on the substrate can be optimally set, for example, they can be made equal to each other, there is an effect that a good quality single crystal thin film can be efficiently formed.

<Effect of the Invention According to Claim 4> In the device of the present invention, the beam of gas supplied from a single beam source is two-dimensionally diverged in a plurality of directions by the first reflector. Since it is reflected by the second reflector and made into a substantially parallel beam by the second reflector, it does not require a plurality of beam sources,
Moreover, it is possible to irradiate the beam from a plurality of directions onto the surface to be processed which is wider than the cross section of the beam supplied by the beam source. Therefore, by irradiating a wide substrate on which a thin film of a predetermined substance is formed or a wide substrate on which a thin film of a predetermined substance is growing on the surface with a beam of gas using this device, A single crystal thin film of the substance can be formed widely and efficiently without scanning.

<Effect of the Invention According to Claim 5> In the device of the present invention, after the beam is reflected by the first reflector so as to diverge substantially one-dimensionally, the beam is further reflected by the second reflector. Since the beams are parallel beams, it is possible to irradiate the beam to a linear or band-shaped region wider than the beam supplied by the beam source. Moreover, since the sample is scanned in the direction intersecting the linear or strip-shaped region, it is possible to uniformly irradiate the beam on the vast irradiation surface. Further, since a plurality of beam sources and a plurality of reflecting means are respectively provided, it is possible to irradiate the beam uniformly on a vast irradiation surface with a plurality of incident directions.

<Effect of the Invention According to Claim 6> In the apparatus of the present invention, since the rectifying means is installed in the path of the beam from the first reflector to the substrate, the beam is directed in a predetermined direction. Can be aligned. Therefore, strict accuracy is not required for the shape and arrangement of the reflectors, so that the device can be easily configured.

<Effect of the Invention According to Claim 7> In the device of the present invention, after the beam is reflected by the first reflector so as to diverge substantially one-dimensionally, the beam is further reflected by the second reflector. Since the beams are parallel beams, it is possible to irradiate the beam to a linear or band-shaped region wider than the beam supplied by the beam source.

[Brief description of drawings]

FIG. 1 is a front sectional view of a reflection unit according to a sixth embodiment.

FIG. 2 is a front sectional view of the device according to the first embodiment.

FIG. 3 is a graph showing characteristics of the ECR ion source of the first embodiment.

FIG. 4 is a diagram showing a result of a verification test of the device according to the first embodiment.

FIG. 5 is a front sectional view of an apparatus according to a second embodiment.

FIG. 6 is a perspective view of a reflection plate according to a second embodiment.

FIG. 7 is a plan view of the reflector shown in FIG.

FIG. 8 is an exploded perspective view of the reflector shown in FIG.

9 is an exploded perspective view of the reflector shown in FIG.

FIG. 10 is a plan view of the reflector shown in FIG.

11 is a cross-sectional view taken along the line AA of the reflector shown in FIG.

FIG. 12 is a diagram showing a result of a verification test of the device according to the second embodiment.

FIG. 13 is a perspective view of an apparatus according to a third embodiment.

FIG. 14 is a perspective view of an apparatus according to a fourth embodiment.

FIG. 15 is a process drawing for explaining the method in the fifth embodiment.

FIG. 16 is a process drawing for explaining the method in the fifth embodiment.

FIG. 17 is a process drawing for explaining the method in the fifth embodiment.

FIG. 18 is a front sectional view of an apparatus according to a sixth embodiment.

FIG. 19 is a plan view of a reflection unit according to a sixth embodiment.

FIG. 20 is a front sectional view of an apparatus according to a seventh embodiment.

FIG. 21 is a perspective view of an apparatus according to an eighth embodiment.

FIG. 22 is a plan view of the device according to the eighth embodiment.

FIG. 23 is a front view of the device according to the eighth embodiment.

FIG. 24 is a plan view of the device according to the eighth embodiment.

FIG. 25 is a perspective view of the device according to the ninth embodiment.

[Explanation of symbols]

102, 103 Axis-oriented polycrystalline thin film forming apparatus (beam irradiation apparatus) 100, 101, 150, 151, 200, 300 Single crystal thin film forming apparatus (beam irradiation apparatus) 1 Reaction vessel (container) 2 ECR ion source (beam source) 10 sample table (member) 11 substrate 12 reflection plate (reflecting means) 51 shielding plate (shielding body) 53 reflection block (reflecting body) 55 slope (reflecting surface) 104 shielding plate (beam distribution adjusting means) 106, 206 reflection block (First Reflector) 306 Electrostatic Electrode (First Reflector) 108, 208 Rectifying Member (Rectifying Means) 110, 210 Reflecting Plate (Second Reflecting Body) 160, 260, 360 Reflecting Unit (Reflecting Means, Reflector)

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Toshikazu Yoshimizu             1-12-38 Esaka-cho, Suita-shi, Osaka Esaka             Inside Soliton Building Mega Chips (72) Inventor Akihiro Shindo             1-12-38 Esaka-cho, Suita-shi, Osaka Esaka             Inside Soliton Building Mega Chips F-term (reference) 4G077 AA03 BA04 CA03 EG25 EJ03                       JA06 JB07                 5F045 AA10 AB02 AC01 AC19 AF07                       BB16 CA15 DP03 DQ10 EF13

Claims (7)

[Claims] 1. A beam irradiation device for irradiating a surface of a sample with a gas beam, wherein a single beam source for supplying the gas beam and reflecting the beam supplied by the beam source. Reflecting means for enabling the gas to be irradiated onto the illuminated surface with a plurality of predetermined incident directions, the reflecting means being arranged in the path of the beam supplied from the beam source. A plurality of divergent beams whose beam cross section expands two-dimensionally as the beam travels by reflecting the beam in a plurality of directions.
And a second reflector having a concave reflecting surface that further reflects the plurality of divergent beams so as to make the plurality of divergent beams incident on the surface to be irradiated as a substantially parallel beam from a plurality of directions. apparatus. 2. The beam irradiating device according to claim 1, wherein the reflecting means further comprises a rectifying means for aligning a direction of the beam on a path of the beam from the first reflector to the substrate. Beam irradiation device. 3. The beam irradiation apparatus according to claim 1, wherein the reflecting means is inserted in a path of the beam between the beam source and the first reflector and is perpendicular to the path. The beam irradiation apparatus further comprising beam distribution adjusting means for adjusting the beam amount of each component reflected in a plurality of directions by the first reflector by adjusting the distribution of the beam. 4. A beam reflector for reflecting a beam of gas supplied from a single beam source, thereby enabling the gas to be irradiated onto a surface to be irradiated of a sample with a plurality of predetermined incident directions. A first reflector for generating a plurality of divergent beams whose beam cross-section expands two-dimensionally as the beam travels by reflecting the beams in a plurality of directions; and the plurality of divergent beams. And a second reflector having a concave reflecting surface that further reflects the light so as to be incident on the irradiated surface as a substantially parallel beam from a plurality of directions. 5. A beam irradiation device for irradiating an irradiation surface of a sample with a gas beam, comprising: a plurality of beam sources for supplying the gas beam; and a reflection of the beams supplied by the plurality of beam sources. A plurality of reflecting means for allowing the gas to be irradiated to a common region of the irradiated surface with a plurality of predetermined incident directions, each reflecting means from each of the beam sources. A first reflector that is disposed in the path of the beam to be supplied and that reflects the beam to generate a divergent beam whose beam cross-section expands approximately one-dimensionally as the beam advances;
A second reflector having a concave reflecting surface for further reflecting the divergent beam so as to be incident on the common region of the irradiation surface as a linear or strip-shaped substantially parallel beam; The beam irradiation device, wherein the irradiation device further includes moving means for scanning the sample in a direction intersecting with the linear or strip-shaped common region. 6. The beam irradiating device according to claim 5, wherein each of the reflecting means further comprises a rectifying means for aligning a direction of the beam with a path of the beam from the first reflector to the substrate. Beam irradiation device. 7. A beam reflecting device for reflecting a beam of a gas supplied from a beam source to irradiate the surface to be irradiated of a sample with the gas in a predetermined incident direction, comprising: A first reflector that generates a divergent beam whose beam cross-section expands in a substantially one-dimensional manner as the beam advances by reflecting the beam, and the divergent beam in a linear or strip shape on the irradiated surface. A second reflecting surface having a concave surface which is further reflected so as to be incident on the area as a substantially parallel beam;
And a beam reflector.