JP2003132738A - Substrate with transparent electroconductive film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate with a transparent electroconductive film having the transparent electroconductive film wherein conduction of carrier can be controlled efficiently, specific resistance of the film is low, and optical transparency can be secured in a wide range from the visible light region to the ultraviolet ray region. SOLUTION: This is the substrate with the transparent electroconductive film, wherein the transparent electroconductive film has been formed having the specific resistivity of 100 μΩ×cm or less at least on one side surface of the substrate, and its transparent electroconductive film is formed while a carrier supplying layer having carrier density of 1.5×10<21> cm<-3> or more and a carrier transporting layer having mobility of 50 cm<2> /V×S or more are alternately laminated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate with a transparent conductive film having a low specific resistance, and particularly to a liquid crystal display (L
CD), electroluminescence display (EL
D) and a substrate with a transparent conductive film that can be suitably used as a transparent electrode of a flat panel display such as a plasma display (PDP).

[0002]

2. Description of the Related Art Transparent conductive films having low specific resistance and high visible transmittance have been used for LCDs, inorganic ELDs, and organic ELs.
It is applied to D, PDP, etc.

Among these, particularly LCDs and organic ELDs
In comparison with conventional cathode ray tubes, the thin film is lighter in weight, consumes less electric power, and has a higher resolution, so that the demand thereof is expanding in recent years.

The image display of the LCD is performed by changing the arrangement of the liquid crystal molecules by controlling the applied voltage and adjusting the light amount of the projection light from the backlight which can pass through the image liquid crystal and reach the screen. Therefore, the transparent conductive film used to drive the liquid crystal is required to have a low specific resistance in order to apply a stable voltage to the liquid crystal molecules. Also,
With the recent trend toward larger LCDs, higher color, and higher definition, lowering the specific resistance of the transparent conductive film is an important required characteristic.

Further, in the organic ELD, since image display is performed by current driving, it is required to reduce the wiring resistance more than the image display of the LCD.

When the transparent conductive film is formed by using, for example, a sputtering method, the specific resistance of the transparent conductive film greatly depends on the film forming temperature. Therefore, the higher the film forming temperature, the lower the specific resistance of the obtained film. Become. At a film forming temperature of 400 ° C or higher,
A film having a specific resistance of about 1.2 × 10 ⁻⁴ Ω · cm is obtained, and in order to further reduce the specific resistance, for example, the transparent conductive film 10 is replaced with a Cr metal film 11 as shown in FIG. A laminated structure is also used.

However, in the organic ELD, the specific resistance of the film is 1.
A manufacturing process in which 2 × 10 ⁻⁴ Ω · cm is not sufficient, and in a laminate with a Cr metal film, the light transmission efficiency is blocked by Cr and the light extraction efficiency is deteriorated, and more etching processes are required. Process defects also occur.

[0008]

Transparent conductive films that have been put into practical use in recent years include Sn-doped In ₂ O ₃ films (ITO films) and F-doped SnO ₂ films. Among these, the conduction mechanism of the ITO film is as follows. That is, In ₂ O ₃ is a maternal exist oxygen defects, carrier electrons from the defect level is supplied, an In ₂
O ₃ exhibits electrical conductivity. When the amount of oxygen defects is small, the carrier density decreases and the specific resistance increases.

Sn in the ITO film has a function of replacing In in In ₂ O ₃ and emitting carrier electrons. In ₂ O ₃
The carrier density can be increased by adding Sn to, and the specific resistance of the ITO film is lower than that of the In ₂ O ₃ film.

Therefore, in order to reduce the specific resistance, it is necessary to increase the carrier supply amount or increase the carrier mobility. Among them, in order to increase the supply amount of carriers, it is necessary to increase the doping amount of Sn and the amount of oxygen vacancies, but all of the added elements do not work effectively as dopants, and the crystal structure From the viewpoint that there is a limit to the amount of oxygen vacancies for stabilization, there is naturally a limit to increasing the carrier density.

On the other hand, in order to increase the carrier mobility, it is necessary to reduce carrier scattering due to dopants and defects in crystal grains.

The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a substrate with a transparent conductive film having a very low specific resistance of the film.

[0013]

The present invention has been made to achieve the above object, and the substrate with a transparent conductive film according to claim 1 has 100 or more layers on at least one surface thereof.
A substrate with a transparent conductive film on which a transparent conductive film having a specific resistance of μΩ · cm or less is formed, wherein the transparent conductive film is
It is formed by alternately stacking a carrier supply layer having a carrier density of 1.5 × 10 ²¹ cm ⁻³ or more and a carrier transport layer having a mobility of 50 cm ² / V · S or more. Characterize.

The substrate with a transparent conductive film according to a second aspect is the substrate with a transparent conductive film according to the first aspect, wherein the carrier supply layer is disposed on the outermost surface.

A substrate with a transparent conductive film according to claim 3 is the substrate with a transparent conductive film according to claim 1 or 2, wherein the thickness of the carrier supply layer is larger than the thickness of the carrier transport layer. To do.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION The inventors of the present invention have conducted extensive studies to achieve the above object, and as a result, 100 μΩ · c on the substrate surface.
In forming a transparent conductive film having a specific resistance of m or less, the transparent conductive film is formed by using a carrier supply layer having a carrier density of 1.5 × 10 ²¹ cm ⁻³ or more and 50 cm ² / V.
It is possible to obtain a substrate with a transparent conductive film having an extremely low specific resistance by being constituted by a plurality of layers including a carrier transporting layer having a mobility of S or more and by alternately laminating these layers. I found it.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a schematic structure of a substrate with a transparent conductive film according to an embodiment of the present invention.

In the figure, 1 is a transparent substrate, and a carrier supply layer 2 is formed on one surface of the transparent substrate 1.
A carrier transport layer 3 is formed on the carrier supply layer 2,
Further, the carrier supply layer 2 is formed on the carrier transport layer 3. The upper and lower carrier supply layers 2 and the carrier transport layer 3 form a transparent conductive film 4.

As the transparent substrate 1, a glass substrate made of soda lime silicate glass, non-alkali glass, low alkali glass, etc. is generally used, but not limited to these, and for example, a transparent plastic substrate or the like is used. You can also In addition, the color filter (C
Substrates with F) can also be used.

As described above, the carrier of the transparent conductive film is
Although supplied by the doped impurity element and oxygen defect, these carrier sources simultaneously serve as a scattering source for the carriers and reduce the mobility.

Therefore, in the present invention, the transparent conductive film 4
A carrier supply layer 2 for increasing the carrier density by introducing impurity elements and oxygen defects as much as possible, and a carrier transport layer 3 for reducing impurity elements and oxygen defects and having a sufficiently large mobility, which have different functions. It is composed by doing.

That is, the transparent conductive film 4 has a size of 1.5 × 10.
Carrier supply layer 2 having a carrier density of ²¹ cm ^-3 or more
And 50 cm ² / V formed on the carrier supply layer 2
The carrier transport layer 3 having a mobility of S or more, and the carrier supply layer 2 formed on the carrier transport layer 3 and having a carrier density of 1.5 × 10 ²¹ cm ⁻³ or more.

In the present invention, the transparent conductive film 4 is not limited to the above-mentioned three-layer structure, and may have a two-layer, four-layer, or five-layer structure or more. In short, it suffices that the carrier supply layers 2 and the carrier transport layers 3 are alternately laminated, and in that case, the carrier supply layer 2 having a high carrier density is arranged on the outermost surface. preferable.

In the present invention, the transparent conductive film 4 is preferably formed by using an ion plating method or a sputtering method. In particular, by forming the carrier supply layer 2 by an ion plating method involving arc discharge, a film having a high carrier density can be formed, and thus a substrate with a transparent conductive film having an extremely low specific resistance can be obtained. In addition to that, a substrate with a transparent conductive film having good peel resistance can be obtained. When the carrier transport layer 3 is formed by a sputtering method, for example, if a target of Sn 7 wt% or less is used,
It is possible to suppress the addition of ionized impurity centers into the film. Further, when the film is formed by the ion plating method, if an ITO source of Sn 3 wt% or less is used, similarly, the addition of ionized impurity centers can be suppressed in the film.

[0026]

EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples.

(Example 1) On a soda lime glass substrate, three layers consisting of a carrier supply layer, a carrier transport layer and a carrier supply layer were formed in this order to prepare a substrate with a transparent conductive film.

A glass substrate is mounted in an ion plating apparatus, arc discharge is performed under the following film forming conditions, and a carrier supply layer (ITO film) made of indium tin oxide having a thickness of 60 nm is formed as a first layer on the glass substrate. Was formed. [Film forming conditions] ITO sintered body: Sintered body with composition ratio of SnO ₂ of 5 mass% (diameter 30 mm, height 40 mm) Discharge gas: Ar + O ₂ Pressure in vacuum container: 0.266 Pa (2.0 ×) 10 ^-3 T
orr) Oxygen partial pressure in discharge gas: 8.0 × 10 ^-2 Pa (6.0 ×
10 ⁻⁴ Torr) Discharge current: 150 A Glass substrate temperature: 200 ° C.

A mixed gas consisting of O ₂ and Ar was introduced into the vacuum vessel at a pressure of 0.266 Pa (1.95 × 10 ⁻³ Torr).
Then, a voltage is applied from the cathode to the main hearth (anode) on which the ITO sintered body is set to generate a discharge, and a current of 150 A is applied to evaporate the ITO sintered body to cause a glass substrate. It was formed into a film. Carrier supply layer (ITO film)
Had a carrier density of 1.5 × 10 ²¹ cm ⁻³ .

Next, a glass substrate on which the carrier supply layer (ITO film) was formed was mounted in a DC sputtering device, and sputtering was performed under the following film forming conditions to form a second layer on the carrier supply layer (ITO film). As a thickness of 30n
m carrier transport layer (IT
O film) was formed. The carrier transport layer (ITO film) has a mobility of 50 cm ² / V · S and a carrier density of 1.0 × 10 5.
It was ²¹ cm ^-3 . [Film forming conditions] Target: SnO ₂ composition ratio 7% by mass In ₂ O ₃ sintered body Sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol)
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Power supply: 600 W Glass substrate temperature: 200 ° C.

Further, a glass substrate having the carrier carrying layer (ITO film) formed thereon was mounted in an ion plating apparatus, and arc discharge was performed under the same film forming conditions as for the first layer,
A carrier supply layer (ITO film) made of indium tin oxide having a thickness of 60 nm and a carrier density of 1.5 × 10 ²¹ cm ⁻³ was formed as a third layer on the carrier transport layer (ITO film).

When the substrate with a transparent conductive film prepared was measured, the total film thickness of the ITO film was 150 nm, the specific resistance of the film surface was 90 μΩ · cm, and the light transmittance was 480 nm.
To 80% or more in the visible light region of 700 nm. As a result, it was confirmed that the substrate with the transparent conductive film of Example 1 had extremely low specific resistance and was capable of ensuring light transmittance in a wide range from the visible light region to the ultraviolet light region.

(Example 2) In the same manner as in Example 1, three layers of a carrier supply layer, a carrier transfer layer and a carrier supply layer were formed in this order on a soda lime glass substrate, and a transparent conductive film was attached. A substrate was produced. The film forming conditions and the physical properties of the ITO film are as follows.

[Film forming conditions] [First layer] Film forming method: Ion plating method ITO sintered body: Sintered body having SnO ₂ composition ratio of 6 mass% (diameter 30 mm, height 40 mm) Discharge gas: Pressure in Ar + O ₂ vacuum container: 0.266 Pa (2.0 × 10 ⁻³ T
orr) Oxygen partial pressure in discharge gas: 8.0 × 10 ^-2 Pa (6.0 ×
10 ⁻⁴ Torr) Discharge current: 150 A Glass substrate temperature: 200 ° C. ITO film thickness: 60 nm [second layer] Film formation method: Sputtering method Target: In ₂ O ₃ sintering with SnO ₂ composition ratio of 3 mass%. Body sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Supply power: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 30 nm [Third layer] Same as the film forming conditions for the first layer.

[Physical Properties of ITO Film] Carrier density of the first layer (carrier supply layer): 1.6 × 10 ²¹ cm ⁻³ Carrier mobility of the second layer (carrier carrying layer): 70 cm ² / V · S , Carrier density: 0.6 × 10 ²¹ cm ^-3 Carrier density of third layer (carrier supply layer): 1.6 × 10 ²¹ cm ^-3 Total film thickness: 150 nm Specific resistance of film surface: 80 μΩ · cm Light transmission Ratio: 80% or more in the visible light range of wavelength 480 nm to 700 nm

As a result, it was confirmed that the substrate with the transparent conductive film of Example 2 had a very low specific resistance and was capable of ensuring the light transmittance in a wide range from the visible light region to the ultraviolet light region.

(Embodiment 3) In the same manner as in Embodiments 1 and 2,
On a soda lime glass substrate, three layers including a carrier supply layer, a carrier transport layer, and a carrier supply layer were formed in this order to prepare a substrate with a transparent conductive film. The film forming conditions and the physical property values are as follows.

[Film Forming Conditions] [First Layer] Film forming method: Ion plating method ITO sintered body: Sintered body with SnO ₂ composition ratio of 7 mass% (diameter 30 mm, height 40 mm) Discharge gas: Pressure in Ar + O ₂ vacuum container: 2.66 × 10 ⁻¹ Pa (2.0 × 1
0 ^-3 Torr) Oxygen partial pressure in discharge gas: 0.80 × 10 ^-1 Pa (0.6
× 10 ^-3 Torr) discharge current: 150A glass substrate temperature: 200 ° C. ITO film thickness: 60 nm [second layer] film formation method: sputtering target composition ratio of SnO ₂ is 3 wt% of In ₂ O ₃ sintered Combined sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Supply power: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 30 nm [Third layer] Same as the film forming conditions for the first layer.

[Physical Properties of ITO Film] Carrier Density of First Layer (Carrier Supply Layer): 1.8 × 10 ²¹ cm ⁻³ Carrier Mobility of Second Layer (Carrier Transport Layer): 70 cm ² / V · S Carrier density: 0.6 × 10 ²¹ cm ⁻³ Carrier density of third layer (carrier supply layer): 1.8 × 10 ²¹ cm ⁻³ Total film thickness: 150 nm Specific resistance of film surface: 60 μΩ · cm Light transmittance : 80% or more in the visible light range of wavelength 480 nm to 700 nm

As a result, it was confirmed that the substrate with the transparent conductive film of Example 3 had an extremely low specific resistance and was capable of ensuring light transmittance in a wide range from the visible light region to the ultraviolet light region.

(Comparative Example 1) On a soda lime glass substrate, three layers including a carrier supply layer, a carrier transport layer and a carrier supply layer were formed in this order to prepare a substrate with a transparent conductive film.

A glass substrate was mounted in a DC sputtering apparatus, and sputtering was performed under the following film forming conditions to form a carrier supply layer (ITO film) of indium tin oxide having a thickness of 60 nm as the first layer on the glass substrate. Filmed
The carrier density of the carrier supply layer (ITO film) is 1.0
It was × 10 ²¹ cm ^-3 . [Film forming conditions] Target: SnO ₂ composition ratio 7% by mass In ₂ O ₃ sintered body Sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol)
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Supply power: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 60 nm

Next, in the same sputtering apparatus, sputtering was performed under the following film forming conditions, and a carrier transporting layer made of indium tin oxide having a thickness of 30 nm was formed as a second layer on the carrier supply layer (ITO film) of the glass substrate. A layer (ITO film) was formed. Carrier transport layer (IT
The mobility of the O film) was 50 cm ² / V · S and the carrier density was 0.8 × 10 ²¹ cm ⁻³ . [Film forming conditions] Target: SnO ₂ composition ratio 3 mass% In ₂ O ₃ sintered body Sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol)
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Power supply: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 30 nm

Further, in the same sputtering apparatus, sputtering was performed under the same film forming conditions as for the first layer,
A carrier transport layer (ITO film) made of indium tin oxide having a thickness of 60 nm was formed as a third layer on the carrier transport layer (ITO film). Carrier supply layer (ITO film)
Had a carrier density of 1.0 × 10 ²¹ cm ⁻³ .

When the thus-prepared substrate with the transparent conductive film was measured, the total film thickness of the ITO film was 150 nm, the specific resistance of the film surface was 130 μΩ · cm, and the light transmittance was 480 n.
It was 83% in the visible light region from m to 700 nm. As a result, it was confirmed that the substrate with the transparent conductive film of Comparative Example 1 was able to secure the light transmittance in a wide range from the visible light region to the ultraviolet light region, but had an extremely high specific resistance.

(Comparative Example 2) In the same manner as in Comparative Example 1, three layers of a carrier supply layer, a carrier transport layer and a carrier supply layer were formed in this order on a soda lime glass substrate, and a transparent conductive film was attached. A substrate was produced. The film forming conditions and the physical properties of the ITO film are as follows.

[Film Forming Conditions] [First Layer] Film forming method: Ion plating method ITO sintered body: Sintered body having SnO ₂ composition ratio of 5% by mass (diameter 30 mm, height 40 mm) Discharge gas: Pressure in Ar + O ₂ vacuum container: 0.266 Pa (2.0 × 10 ⁻³ T
orr) Oxygen partial pressure in discharge gas: 8.0 × 10 ^-2 Pa (6.0 ×
10 ⁻⁴ Torr) Discharge current: 150 A Glass substrate temperature: 200 ° C. ITO film thickness: 60 nm [second layer] Film-forming method: Sputtering method Target: In ₂ O _{3 with} a composition ratio of SnO ₂ of 10 mass%.
Sintered body sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Supply power: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 30 nm [Third layer] Same as the film forming conditions for the first layer.

[Physical Properties of ITO Film] Carrier Density of First Layer (Carrier Supply Layer): 1.5 × 10 ²¹ cm ⁻³ Carrier Mobility of Second Layer (Carrier Transport Layer): 40 cm ² / V · S Carrier density: 1.0 × 10 ²¹ cm ⁻³ Carrier density of third layer (carrier supply layer): 1.5 × 10 ²¹ cm ⁻³ Total film thickness: 150 nm Specific resistance of film surface: 110 μΩ · cm Light transmittance : 82% in the visible light region of wavelength 480 nm to 700 nm

As a result, it was confirmed that the substrate with the transparent conductive film of Comparative Example 2 had a very high specific resistance although it was able to secure the light transmittance in a wide range from the visible light region to the ultraviolet light region.

(Comparative Example 3) On a soda lime glass substrate, three layers including a carrier transport layer, a carrier supply layer and a carrier transport layer were formed in this order to prepare a substrate with a transparent conductive film. The film forming conditions and the physical properties of the ITO film are as follows.

[Film Forming Conditions] [First Layer] Film forming method: Sputtering method Target: In ₂ O ₃ sintered body with composition ratio of SnO ₂ of 7 mass% Sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol)
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Supply power: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 60 nm [second layer] Film formation method: Ion plating method ITO sintered body: SnO ₂ composition ratio 5% by mass of sintered body (diameter 30 mm, height 40 mm) Discharge gas: Ar + O ₂ Pressure in vacuum container: 0.266 Pa (2.0 × 10 ⁻³ T
orr) Oxygen partial pressure in discharge gas: 8.0 × 10 ^-2 Pa (6.0 ×
10 ⁻⁴ Torr) Discharge current: 150 A Glass substrate temperature: 200 ° C. ITO film thickness: 30 nm [Third layer] Same as the film forming conditions for the first layer.

[Physical Properties of ITO Film] Carrier Density of Second Layer (Carrier Supply Layer): 1.5 × 10 ²¹ cm ⁻³ Carrier Mobility of First Layer and Third Layer (Carrier Transport Layer): 50 cm ² / V · S Carrier density: 1.0 × 10 ²¹ cm ⁻³ Total film thickness: 150 nm Specific resistance of the film surface: 140 μΩ · cm Light transmittance: 83% in the visible light range of wavelength 480 nm to 700 nm

When the physical properties of Comparative Example 3 were compared with those of Example 1, it was confirmed that the specific resistance was extremely high. It is estimated that this is because the carrier supply amount is small in the uppermost surface layer to which the voltage is applied.

(Comparative Example 4) In the same manner as in Comparative Examples 1 and 2,
On a glass substrate made of soda lime, a carrier supply layer, a carrier transfer layer and a carrier supply layer under the following conditions 3
The layers were formed in this order to produce a substrate with a transparent conductive film. The film forming conditions and the physical properties of the ITO film are as follows.

[Film Forming Conditions] [First Layer] Film forming method: Ion plating method ITO sintered body: Sintered body having a composition ratio of SnO ₂ of 5 mass% (diameter 30 mm, height 40 mm) Discharge gas: Pressure in Ar + O ₂ vacuum container: 0.266 Pa (2.0 × 10 ⁻³ T
orr) Oxygen partial pressure in discharge gas: 8.0 × 10 ^-2 Pa (6.0 ×
10 ⁻⁴ Torr) Discharge current: 150 A Glass substrate temperature: 200 ° C. ITO film thickness: 50 nm [second layer] Film-forming method: Sputtering method Target: In ₂ O ₃ sintered with a composition ratio of SnO ₂ of 7 mass% Body sputtering gas: Ar + O ₂ (O ₂ : 1.0 mol
%) Gas pressure of sputtering gas: 4.0 × 10 ⁻¹ Pa
(3.0 × 10 ⁻³ Torr) Supply power: 600 W Glass substrate temperature: 200 ° C. ITO film thickness: 50 nm [Third layer] Same as the film forming conditions for the first layer.

[Physical Properties of ITO Film] Carrier density of the first layer (carrier supply layer): 1.5 × 10 ²¹ cm ⁻³ Carrier mobility of the second layer (carrier transport layer): 50 cm ² / V · S Carrier density: 1.0 × 10 ²¹ cm ⁻³ Carrier density of third layer (carrier supply layer): 1.5 × 10 ²¹ cm ⁻³ Total film thickness: 150 nm Specific resistance of film surface: 120 μΩ · cm Light transmittance : 81% in the visible light region of wavelength 480 nm to 700 nm

When the physical properties of Comparative Example 4 are compared with those of Example 1, the carrier density of the first layer, the carrier mobility of the second layer and the carrier density of the third layer are almost the same. Comparative Example 4 has a considerably large specific resistance value. It is estimated that this is because the carrier supply amount is small.

[0058]

As described in detail above, according to the substrate with a transparent conductive film according to claim 1 of the present invention, a transparent conductive film having a specific resistance of 100 μΩ · cm or less is formed on at least one surface of the substrate. The transparent conductive film is formed
Since the carrier supply layer having a carrier density of 1.5 × 10 ²¹ cm ⁻³ or more and the carrier transport layer having a mobility of 50 cm ² / V · S or more are alternately laminated, Carrier conduction can be controlled efficiently, and a substrate with a transparent conductive film having an extremely low specific resistance can be obtained.

According to the substrate with a transparent conductive film of claim 2, since the carrier supply layer is disposed on the outermost surface, a large number of carriers can be conducted to the transport layer by applying a voltage, and the ratio is extremely low. Resistance can be secured and conductivity can be improved.

According to the substrate with a transparent conductive film of claim 3, since the thickness of the carrier supply layer is larger than the thickness of the carrier transport layer, many carriers can be conducted and the specific resistance is extremely low. A substrate with a conductive film can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a laminated structure of a transparent conductive film and Cr according to a conventional technique.

FIG. 2 is a cross-sectional view showing a schematic structure of a substrate with a transparent conductive film according to an embodiment of the present invention.

[Explanation of symbols]

1 transparent substrate 2 Carrier supply layer 3 Carrier transport layer 4 Transparent conductive film 10 Transparent conductive film 11 Cr metal film

Claims (3)

[Claims] 1. At least one surface of the substrate is 100 μm.
A substrate with a transparent conductive film on which a transparent conductive film having a specific resistance of Ω · cm or less is formed, wherein the transparent conductive film is 1.5
A carrier supply layer having a carrier density of × 10 ²¹ cm ^-3 or more and a carrier transport layer having a mobility of 50 cm ² / V · S or more are alternately laminated. Substrate with transparent conductive film. 2. The substrate with a transparent conductive film according to claim 1, wherein the carrier supply layer is disposed on the outermost surface of the transparent conductive film. 3. The substrate with a transparent conductive film according to claim 1, wherein the carrier supply layer has a thickness larger than that of the carrier transport layer.