JP2003131395A - Resist pattern, method of forming this resist pattern, patterning method using this resist pattern and method of manufacturing thin-film magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resist pattern which does not give rise to intermixing at the boundary between an upper layer resist layer and a lower layer resist layer and consequently has a good shape, a method of forming this resist pattern, a patterning method of a thin film by using this resist pattern and a method of manufacturing a thin-film magnetic head. SOLUTION: This method of forming the resist pattern including the lower resist pattern and the upper resist pattern comprises forming the lower resist pattern by an integral NQD novolak resist material, a hydrophobic integral NQD novolak resist material or a resist material essentially consisting of a polyhydroxy styrene base resin. The method of forming the resist pattern including the lower resist pattern, the upper resist pattern and a separator pattern disposed between the lower resist pattern and the upper resist pattern comprises forming the lower resist pattern by a positive resist material, NQD novolak resist material, integral type NQD novolak resist material, hydrophobic integral NQD novolak resist material or resist material essentially consisting of a polyhydroxy styrene base resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist pattern, a method for forming a resist pattern, a patterning method using the resist pattern, and a method for manufacturing a thin film magnetic head.

[0002]

2. Description of the Related Art When manufacturing a thin film element such as a thin film magnetic head, a semiconductor element, or a microdevice, patterning processing such as milling (dry etching) processing, lift-off processing, or a combination thereof is performed a plurality of times. These patterning processes start by forming a photoresist pattern that is a mask.

There are various types of photoresist patterns, but in recent years, a two-layer resist pattern having an inverted trapezoidal or T-shaped cross section has attracted attention.

Japanese Patent Publication No. 7-6058 discloses an example of a method of forming a two-layer resist pattern which is patterned by utilizing the solubility of a lower layer in a developing solution, in which a polymethylglutarimide (PMGI) layer is used as a lower layer. Is listed.

[0005]

[Problems to be Solved by the Invention] However, PMG
In case of I, it is impossible to form a highly viscous product, and therefore a thick resist pattern cannot be formed. That is, P
When a two-layer resist pattern is formed with the MGI layer as the lower layer, the maximum thickness is less than 3 μm. Therefore, when a thin film is formed by the lift-off method using this two-layer resist pattern as a mask, it is impossible to form a thin film having a large film thickness.

Further, since the lower layer is patterned by utilizing the dissolution rate of the resin in the upper layer resist developing solution, it is very difficult to accurately control the cross-sectional shape of the two-layer resist pattern. .

Further, when a novolac resin or naphthoquinonediazide (hereinafter referred to as NQD) novolac resist material is used for the lower layer, intermixing occurs at the interface with the lower layer when the upper layer resist is applied, and a good shape is obtained. The resist pattern could not be obtained. If the lower layer is heat-treated until intermixing does not occur, the lower layer loses its photosensitivity and a two-layer resist pattern having a T-shaped cross section cannot be obtained.

Accordingly, an object of the present invention is to provide a resist pattern having a larger film thickness, a method for forming such a resist pattern, a method for patterning a thin film using this resist pattern, and a method for manufacturing a thin film magnetic head. To provide.

Another object of the present invention is to provide a resist pattern having a highly accurate cross-sectional shape, a method for forming a resist pattern capable of controlling the cross-sectional shape with high accuracy, a thin film patterning method using this resist pattern, and a thin film magnetic head. It is to provide a manufacturing method.

Still another object of the present invention is to provide a resist pattern which does not cause intermixing at the interface between the upper resist layer and the lower resist layer and has a good shape, a method for forming this resist pattern, and this resist pattern. It is an object of the present invention to provide a thin film patterning method used and a thin film magnetic head manufacturing method.

[0011]

According to the present invention, a lower side formed of an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component. A resist pattern including a resist pattern and an upper resist pattern formed on the lower resist pattern is provided.

By using such a material for the lower resist pattern, the film thickness can be increased to, for example, about 10 μm, and since this material has solvent resistance, intermixing occurs at the interface with the upper resist pattern. Since it does not exist, a resist pattern having a good shape can be obtained.

Further according to the present invention, a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component is used. Provided is a resist pattern including a formed lower resist pattern, a separator pattern formed of an organic material or an inorganic material on the lower resist pattern, and an upper resist pattern formed on the separator pattern. .

By using such a material for the lower resist pattern, the film thickness can be increased to, for example, about 10 μm. Moreover, since the separator pattern is provided, intermixing does not occur at the interface with the upper resist pattern, so that a resist pattern having a good shape can be obtained.

The upper resist pattern is formed of a positive resist material, an NQD novolak resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or a resist material containing polyhydroxystyrene resin as a main component. Preferably.

According to the present invention, a method of forming a resist pattern including a lower resist pattern and an upper resist pattern, wherein the lower resist pattern is
Integrated NQD novolac resist material, hydrophobic integrated N
A method for forming a resist pattern formed by a QD novolak resist material or a resist material containing polyhydroxystyrene resin as a main component, a resist pattern formed by this method is used to form a thin film by a lift-off method, and then the resist pattern is removed. A method for patterning a thin film and a method for manufacturing a thin film magnetic head for forming a thin film pattern by the patterning method are provided.

By using such a material for the lower resist pattern, the film thickness can be increased to, for example, about 10 μm, and since this material has solvent resistance, intermixing occurs at the interface with the upper resist pattern. Since it does not exist, a resist pattern having a good shape can be obtained. Therefore, a relatively thick film can be patterned into a good shape.

After the lower resist layer is laminated on the substrate, the lower resist layer is exposed to a predetermined pattern, the upper resist layer is laminated on the exposed lower resist layer, and then the upper resist layer is predetermined. The lower resist pattern and the upper resist pattern are preferably formed by exposing the pattern to light and then developing. In addition, after laminating a lower resist layer and an upper resist layer having lower sensitivity than the lower resist layer on the substrate, the lower resist layer and the upper resist layer are exposed in two predetermined patterns different from each other and then developed. Therefore, it is also preferable to form the lower resist pattern and the upper resist pattern. By thus forming the lower resist pattern and the upper resist pattern by exposure, the cross-sectional shape of the resist pattern can be accurately controlled to an arbitrary shape.

According to the present invention, there is further provided a method of forming a resist pattern including a lower resist pattern, an upper resist pattern, and a separator pattern provided between the lower resist pattern and the upper resist pattern. Side resist pattern, positive resist material, N
Method for forming resist pattern formed by QD novolac resist material, integrated NQD novolac resist material, hydrophobic integrated NQD novolac resist material, or resist material containing polyhydroxystyrene resin as main component, resist pattern formed by this method A thin film patterning method for removing a resist pattern after forming a thin film by a lift-off method using, and a method for manufacturing a thin film magnetic head for forming a thin film pattern by this patterning method are provided.

By using such a material for the lower resist pattern, the film thickness can be increased to, for example, about 10 μm. Moreover, since the separator pattern is provided, intermixing does not occur at the interface with the upper resist pattern, so that a resist pattern having a good shape can be obtained. Therefore, a relatively thick film can be patterned into a good shape.

After the lower resist layer is laminated on the substrate, the lower resist layer is exposed to a predetermined pattern, the separator layer and the upper resist layer are laminated on the exposed lower resist layer, and then the upper resist layer. It is preferable to form a lower resist pattern, a separator pattern and an upper resist pattern by exposing to a predetermined pattern and then developing to remove a part of the separator layer. Further, after the lower resist layer is laminated on the substrate, a separator layer is formed on the surface of the lower resist layer, the lower resist layer is exposed to a predetermined pattern, and the upper resist is exposed on the exposed lower resist layer. It is also preferable to form the lower resist pattern, the separator pattern, and the upper resist pattern by exposing the upper resist layer to a predetermined pattern after stacking the layers and then developing it to remove a part of the separator layer. Further, after laminating a lower resist layer, a separator layer transparent to exposure light, and an upper resist layer having a lower sensitivity than the lower resist layer on the substrate, the lower resist layer and the upper resist layer are different from each other in a predetermined pattern. It is also preferable that the lower resist pattern, the separator pattern and the upper resist pattern are formed by exposing the pattern in two steps and then developing it to remove a part of the separator layer. By thus forming the lower resist pattern and the upper resist pattern by exposure, the cross-sectional shape of the resist pattern can be accurately controlled to an arbitrary shape.

The separator pattern is preferably made of an organic material. In this case, the lower resist pattern is formed as an integrated NQD novolac resist material or a hydrophobic integrated N
More preferably, it is formed of a QD novolac resist material, and the separator pattern is formed of an azo-bonding layer of an integral NQD novolac resist material or a hydrophobic integral NQD novolac resist material in an alkaline environment.
Further, it is more preferable to form the separator pattern with carbon or diamond-like carbon (DLC). Furthermore, it is more preferable to form the separator pattern with a water-soluble resin layer, a silylated layer, or a heat-altered layer.

When the separator layer is formed of an azo bond layer, a water-soluble resin layer, a silylated layer, or a heat-altered layer of an integral NQD novolac resist material or a hydrophobic integral NQD novolac resist material in an alkaline environment,
It is more preferable to form a separator pattern by removing a part of it by development.

When the separator layer is formed of carbon, DLC, or a heat-altered layer, it is more preferable to form a separator pattern by removing a part of it by ashing.

It is also preferable that the separator pattern is made of an inorganic material. In this case, the separator pattern is
More preferably, it is formed of a metal, an oxide film or a nitride film.

When the separator layer is made of a metal, an oxide film or a nitride film, it is more preferable to form a separator pattern by removing a part of it by milling or reactive ion etching (RIE).

When the separator layer is made of metal, it is more preferable to form a separator pattern by removing a part of it by wet etching.

The upper resist pattern is formed by a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or a resist material containing polyhydroxystyrene resin as a main component. It is also preferable.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a process chart for explaining a method for forming a thin film having a through hole patterned by a lift-off method as a first embodiment of the present invention. The through-hole is, for example, a through-hole in which a through-hole conductor for electrically connecting the lead conductor of the thin-film magnetic head and the connection pad is embedded, but other thin-film element, semiconductor element or microdevice film May be patterned.

First, as shown in FIG. 1A, the first resist material is applied on the substrate or the film 10 for forming the through holes on the substrate and prebaked to form the lower resist layer 11.
To form.

As the first resist material, an integrated NQ is used.
A D novolac resist material, a hydrophobic integrated NQD novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component is used.

In the present specification, the integral NQD novolak resist material is a resist composition in which a photosensitive group is directly bonded to a novolac resin, and specifically, it is represented by the following structural formula (1). Or it has 2 or more repeating units and has a polystyrene reduced weight average molecular weight of 1,000 to
The number of hydrogen atoms of the hydroxyl group of the novolac resin, which is 10,000, is 0.03 to 0.27 mol of 1,2 per 1 atom of hydrogen
A resist composition comprising a novolak resin obtained by substituting with an -NQD sulfonyl group as an alkali-soluble resin and a photosensitizer.

[0033]

[Chemical 1] However, in the formula (1), n is an integer of 1 to 4 and m is 0.
Is an integer of ˜3.

Further, in the present specification, the hydrophobic integral type N
The QD novolac resist material is a hydrophobic resist composition in which a photosensitive group is directly bonded to a novolac resin, and specifically, (A) has a repeating unit represented by the following structural formula (1), A part of the hydrogen atoms of the hydroxyl group of the novolak resin having a polystyrene equivalent weight average molecular weight of 1,000 to 30,000 is replaced with a 1,2-NQD sulfonyl ester group, and a part of the remaining hydrogen atoms of the hydroxyl group is replaced by the following general formula. A polymer compound substituted with one or more substituents among the functional groups represented by (2), (3) or (4),

[0035]

[Chemical 2] However, in the formula (1), n is an integer of 1 to 4 and m is 0.
Is an integer of 3 to 3, and in the formulas (2), (3) and (4), R is a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 20 carbon atoms, Alternatively, it is an aralkyl group having 7 to 20 carbon atoms. Alternatively, the hydrogen atom of the hydroxyl group of the (B) novolac resin is 0.
It is substituted with a 1,2-NQD sulfonyl ester group at a ratio of 03 to 0.3 mol, and some hydrogen atoms of the remaining hydroxyl groups are added at a ratio of 0.01 to 0.8 mol per hydrogen atom. A resist composition containing a polymer compound of (A) substituted with one or more substituents of the functional groups represented by formula (2), (3) or (4).

Furthermore, in this specification, a polyhydroxystyrene-based resist material, for example, the following structural formula (5) (Equation (5) Medium ^R 1 to R ³ is a hydrogen atom or a methyl group .R ² and R ³ is the following general formula (6) (in formula (6), R ⁴ and R ⁵ are each independently a hydrogen atom or a linear or branched alkyl group having 1 to 6 carbon atoms; ⁶ is a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or R ⁴ and R ⁵ , R ⁴
And R ⁶ or R ⁵ and R ⁶ may form a ring. When forming a ring, R ⁴ , R ⁵ , and R ⁶ are each independently a group represented by a linear or branched alkylene group having 1 to 6 carbon atoms, or —CO ₂ C (C
H ₃ ) ₃ may be used. x and y are each an integer of 0 or more. z is an integer of 1 or more) and indicates a resist material containing a base resin, which is a polymer compound having a weight average molecular weight of 10,000 to 25,000, and an acid generator. Examples of the acid generator include p-toluenesulfonsantriphenylsulfonium and the like.

[0037]

[Chemical 3]

[0038]

[Chemical 4]

Then, as shown in FIG. 3B, the lower resist layer 11 is exposed to light having a wavelength of 200 to 200 through a mask 12.
Expose with light of 500 nm.

Next, as shown in FIG. 3C, a second resist material is applied thereon and prebaked to form an upper resist layer 13.

As the second resist material, positive resist material, NQD novolac resist material, integrated NQ
A D novolac resist material, a hydrophobic integrated NQD novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component is used.

Then, as shown in FIG. 3D, the upper resist layer 13 (and the lower resist layer 11) is exposed through a mask 14 with light having a wavelength of 200 to 500 nm.

Then, after a heat treatment if necessary, the resist film 11 is developed with an alkaline developing solution, washed with water, and dried to form a lower resist pattern 11 as shown in FIG.
A two-layer resist pattern 15 having a T-shaped cross-sectional shape consisting of the upper resist pattern 13 'and the upper resist pattern 13' is obtained.

Thereafter, as shown in FIG. 4F, the patterning target film 16 is formed by sputtering or the like.

Next, as shown in FIG. 3G, the two-layer resist pattern 15 is dissolved by an organic solvent such as acetone or NMP, and unnecessary portions of the patterning target film 16 are lifted off to form a desired pattern. A thin film 16 'is obtained.

The monolithic NQD novolac resist material and the hydrophobic monolithic NQD novolac resist material are NQD
Is bonded to the novolac resin, and the average molecular weight of the molecules constituting the novolac resist material is larger than that in the case of not being an integral type, and it has solvent resistance. Further, the polyhydroxystyrene resin also has solvent resistance. Therefore, as in the present embodiment, as the lower resist layer 11,
By using these materials, the lower resist layer 1
Since intermixing does not occur at the interface between 1 and the upper resist layer 13, a two-layer resist pattern having a good shape can be obtained.

Further, since the lower resist pattern 11 'and the upper resist pattern 13' are both formed by exposure, the cross-sectional shape can be accurately controlled to an arbitrary shape.

Further, since PMGI is not used for the lower resist layer 11, the film thickness can be increased to, for example, about 10 μm. Using this resist pattern, for example, patterning of through holes etc. is performed by the lift-off method. In this case, it is possible to pattern a considerably thick film into a good shape.

FIG. 2 is a process diagram for explaining a method of forming a thin film having through holes patterned by a lift-off method as a second embodiment of the present invention. The through-hole is, for example, a through-hole in which a through-hole conductor for electrically connecting the lead conductor of the thin-film magnetic head and the connection pad is embedded, but other thin-film element, semiconductor element or microdevice film May be patterned.

First, as shown in FIG. 9A, a third resist material is applied onto the substrate or the film 20 for forming a through hole on the substrate and prebaked to form the lower resist layer 21.
To form.

As the third resist material, similar to the first resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component is used. To use.

Then, as shown in FIG. 7B, a fourth resist material is applied thereon and prebaked to form an upper resist layer 23.

As the fourth resist material, similar to the second resist material, a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or polyhydroxystyrene. A resist material containing a resin as a main component is used.

However, the third resist material has a higher sensitivity than the fourth resist material.

Then, as shown in FIG. 7C, the lower resist layer 21 is exposed to light having a wavelength of 200 to 50 through a mask 22.
Expose with 0 nm light. In this case, the upper resist layer 23
Does not react because of low sensitivity, and only the lower resist layer 21 of higher sensitivity is exposed.

Then, as shown in FIG. 6D, the upper resist layer 23 and the lower resist layer 2 are placed through a mask 24.
Both are exposed to light having a wavelength of 200 to 500 nm.

Then, if necessary, heat treatment is performed, followed by development with an alkaline developing solution, washing with water, and drying to obtain the lower resist pattern 21 as shown in FIG.
A two-layer resist pattern 25 having a T-shaped cross-sectional shape including the upper resist pattern 23 'and the upper resist pattern 23' is obtained.

After that, as shown in FIG. 6F, the patterned film 26 is formed by sputtering or the like.

Next, as shown in FIG. 9G, the two-layer resist pattern 25 is dissolved by an organic solvent such as acetone or NMP, and unnecessary portions of the patterning target film 26 are lifted off to form a desired pattern. A thin film 26 'is obtained.

The monolithic NQD novolac resist material and the hydrophobic monolithic NQD novolac resist material are NQD
Is bonded to the novolac resin, and the average molecular weight of the molecules constituting the novolac resist material is larger than that in the case of not being an integral type, and it has solvent resistance. Further, the polyhydroxystyrene resin also has solvent resistance. Therefore, as in the present embodiment, as the lower resist layer 21,
By using these materials, the lower resist layer 2
Since intermixing does not occur at the interface between 1 and the upper resist layer 23, a two-layer resist pattern having a good shape can be obtained.

Further, since the lower resist pattern 21 'and the upper resist pattern 23' are both formed by exposure, the cross-sectional shape can be accurately controlled to an arbitrary shape.

Further, since PMGI is not used for the lower resist layer 21, the film thickness can be increased to, for example, about 10 μm. Using this resist pattern, for example, patterning of through holes etc. is performed by the lift-off method. In this case, it is possible to pattern a considerably thick film into a good shape.

FIG. 3 is a process chart for explaining a method of forming a thin film having through holes patterned by a lift-off method as a third embodiment of the present invention. The through-hole is, for example, a through-hole in which a through-hole conductor for electrically connecting the lead conductor of the thin-film magnetic head and the connection pad is embedded, but other thin-film element, semiconductor element or microdevice film May be patterned.

First, as shown in FIG. 9A, a fifth resist material is applied on the substrate or a film 30 for forming a through hole on the substrate and prebaked to form a lower resist layer 31.
To form.

As the fifth resist material, an integral type NQ is used.
A D novolac resist material or a hydrophobic integral NQD novolac resist material is used.

Next, as shown in FIG. 7B, the surface of the lower resist layer 31 is treated with an alkaline aqueous solution (eg, a developing solution) to form unexposed NQD by azo-bonding with a part of the novolac resin. A separator layer 37 is formed of the resin layer (the azo bond layer of the integral NQD novolac resist material or the hydrophobic integral NQD novolac resist material in an alkaline environment).

Then, as shown in FIG. 6C, the lower resist layer 31 is exposed to light having a wavelength of 200 to 50 through a mask 32.
Expose with 0 nm light.

Then, as shown in FIG. 6D, a sixth resist material is applied thereon and prebaked to form an upper resist layer 33.

As the sixth resist material, similar to the second resist material, a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or polyhydroxystyrene. A resist material containing a resin as a main component is used.

Next, as shown in FIG. 7E, the upper resist layer 33 (and the lower resist layer 31) is exposed to light having a wavelength of 200 to 500 nm through the mask 34.

Then, if necessary, heat treatment is performed, followed by development with an alkaline developing solution, washing with water, and drying to obtain the lower resist pattern 31 as shown in FIG.
A double-layered resist pattern 35 having a T-shaped cross-sectional shape, which is composed of the separator pattern 37 ', the separator pattern 37', and the upper resist pattern 33 ', is obtained.

Thereafter, as shown in FIG. 7G, the patterning target film 36 is formed by sputtering or the like.

Then, as shown in FIG. 3H, the two-layer resist pattern 35 is dissolved by an organic solvent such as acetone or NMP, and unnecessary portions of the patterning target film 36 are lifted off to form a desired pattern. A thin film 36 'is obtained.

As in this embodiment, the lower resist layer 31
By providing the separator layer 37 between the upper resist layer 33 and the upper resist layer 33, intermixing does not occur at the interface between both resist layers, so that a two-layer resist pattern having a good shape can be obtained.

Further, since both the lower resist pattern 31 'and the upper resist pattern 33' are formed by exposure, the cross-sectional shape can be accurately controlled to an arbitrary shape.

Further, since PMGI is not used for the lower resist layer 31, the film thickness can be increased to, for example, about 10 μm. Using this resist pattern, for example, patterning of through holes etc. is performed by the lift-off method. In this case, it is possible to pattern a considerably thick film into a good shape.

FIG. 4 is a process chart for explaining a fourth embodiment of the present invention, which is a method for forming a thin film having through holes patterned by a lift-off method. The through-hole is, for example, a through-hole in which a through-hole conductor for electrically connecting the lead conductor of the thin-film magnetic head and the connection pad is embedded, but other thin-film element, semiconductor element or microdevice film May be patterned.

First, as shown in FIG. 9A, a seventh resist material is applied on the substrate or a film 40 for forming a through hole on the substrate and prebaked to form a lower resist layer 41.
To form.

As the seventh resist material, positive resist material, NQD novolac resist material, integrated NQ
A D novolac resist material, a hydrophobic integrated NQD novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component is used.

Then, as shown in FIG. 6B, the lower resist layer 41 is exposed to light having a wavelength of 200 to 50 through a mask 42.
Expose with 0 nm light.

Then, as shown in FIG. 9C, a carbon layer or a DLC layer, for example, a water-soluble resin layer such as polyacrylic acid, polyvinyl acetal, polyvinyl pyrrolidone, polyvinyl alcohol, polyethyleneimine or polyethylene oxide, is formed thereon. For example, the separator layer 47 is formed by a thermally altered layer such as a milling altered layer, a metal film such as nickel, copper or gold, an oxide film such as alumina or silicon oxide, or a nitride film such as aluminum nitride.

Then, as shown in FIG. 7D, an eighth resist material is applied on the separator layer 47 and prebaked to form an upper resist layer 43.

As the eighth resist material, similar to the second resist material, a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or polyhydroxystyrene. A resist material containing a resin as a main component is used.

Then, as shown in FIG. 7E, the upper resist layer 43 (and the lower resist layer 41) is exposed to light having a wavelength of 200 to 500 nm through the mask 44.

Then, after heat treatment, if necessary, development with an alkaline developing solution, washing with water, drying, and ashing, milling, milling and ashing, or wet etching with an acid is carried out. ), An upper resist pattern 43 'and a separator pattern 47' are obtained.

Further, as shown in FIG. 9G, the lower resist pattern 41 'is obtained by developing with an alkaline developing solution, washing with water and drying, whereby the lower resist pattern 41' and the separator pattern 47 are obtained. A two-layer resist pattern 45 having a T-shaped cross-sectional shape including the upper resist pattern 43 ′ and the upper resist pattern 43 ′ is obtained. When the separator layer 47 is a water-soluble resin, a part of the separator layer is dissolved by development with an alkali developing solution and washing with water at the time of development of FIG. The two-layer resist pattern 45 is obtained by dissolving a part of the separator pattern 47 ′ and developing the seventh resist material.

Thereafter, as shown in FIG. 6H, the film to be patterned 46 is formed by sputtering or the like.

Then, as shown in FIG. 1I, the two-layer resist pattern 45 is dissolved by an organic solvent such as acetone or NMP, and unnecessary portions of the patterning target film 46 are lifted off to form a desired pattern. A thin film 46 'is obtained.

As in this embodiment, the lower resist layer 41
By providing the separator layer 47 between the upper resist layer 43 and the upper resist layer 43, intermixing does not occur at the interface between both resist layers, so that a two-layer resist pattern having a good shape can be obtained.

Further, since both the lower resist pattern 41 'and the upper resist pattern 43' are formed by exposure, the cross-sectional shape can be accurately controlled to an arbitrary shape.

Further, since PMGI is not used for the lower resist layer 41, the film thickness can be increased to, for example, about 10 μm. By using this resist pattern, patterning of, for example, through holes is performed by the lift-off method. In this case, it is possible to pattern a considerably thick film into a good shape.

FIG. 5 is a process diagram for explaining a method of forming a thin film having through holes patterned by a lift-off method as a fifth embodiment of the present invention. The through-hole is, for example, a through-hole in which a through-hole conductor for electrically connecting the lead conductor of the thin-film magnetic head and the connection pad is embedded. May be patterned.

First, as shown in FIG. 9A, the ninth resist material is applied onto the substrate or the film 50 for forming the through holes on the substrate and prebaked to form the lower resist layer 51.
To form.

As the ninth resist material, similar to the seventh resist material, a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or polyhydroxystyrene. A resist material containing a resin as a main component is used.

Then, as shown in FIG. 9B, a separator layer 57 made of an oxide film such as alumina or silicon oxide, which is transparent to the exposure light, is formed thereon.

Then, as shown in FIG. 7C, a tenth resist material is applied on the separator layer 57,
Prebaking is performed to form the upper resist layer 53.

As the tenth resist material, similar to the second resist material, a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material, or polyhydroxystyrene. A resist material containing a resin as a main component is used.

However, the ninth resist material has a higher sensitivity than the tenth resist material.

Then, as shown in FIG. 7D, the lower resist layer 51 is exposed to light having a wavelength of 200 to 50 through a mask 52.
Expose with 0 nm light. In this case, the upper resist layer 53
Does not react because of low sensitivity, and only the lower resist layer 51 of higher sensitivity is exposed.

Then, as shown in FIG. 7E, the upper resist layer 53 and the lower resist layer 5 are placed through a mask 54.
Both are exposed to light having a wavelength of 200 to 500 nm.

Then, after heat treatment if necessary, development with an alkaline developing solution, washing with water, drying, and milling, or milling and ashing are performed, and as shown in FIG. A resist pattern 53 'and a separator pattern 57' are obtained.

Further, as shown in FIG. 7G, the lower resist pattern 51 'is obtained by developing with an alkaline developing solution, washing with water and drying, whereby the lower resist pattern 51' and the separator pattern 57 are formed. A two-layer resist pattern 55 having a T-shaped cross-sectional shape including the upper resist pattern 53 'and the upper resist pattern 53' is obtained.

Thereafter, as shown in FIG. 6H, the patterning target film 56 is formed by sputtering or the like.

Then, as shown in FIG. 1I, the two-layer resist pattern 55 is dissolved by an organic solvent such as acetone or NMP, and unnecessary portions of the patterning target film 56 are lifted off to form a desired pattern. A thin film 56 'is obtained.

As in this embodiment, the lower resist layer 51
By providing the separator layer 57 between the upper resist layer 53 and the upper resist layer 53, a two-layer resist pattern having a good shape can be obtained because intermixing does not occur at the interface between both resist layers.

Further, since the lower resist pattern 51 'and the upper resist pattern 53' are both formed by exposure, the cross-sectional shape can be controlled to an arbitrary shape with high precision.

Furthermore, since PMGI is not used for the lower resist layer 51, the film thickness can be increased to, for example, about 10 μm. Using this resist pattern, for example, patterning such as through holes is performed by the lift-off method. In this case, it is possible to pattern a considerably thick film into a good shape.

[0108]

EXAMPLES The present invention will be described more specifically below with reference to examples and comparative examples.

[0109]Comparative example There is no separator layer and NQD Novo is used as the lower resist layer.
This is the case when a rack resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, NQD novolac resist AZP manufactured by Clariant Japan Co., Ltd.
4620 was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolac resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(F) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4 , Λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(G) An alkaline aqueous solution (developing solution) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

In this comparative example, at this point, intermixing occurred at the interface between the lower resist layer and the upper resist layer, and a two-layer resist pattern having a good shape could not be obtained. Therefore, the subsequent processing was stopped. When the pre-baking temperature was 150 ° C. or higher, intermixing did not occur, but the lower resist layer was not exposed during the exposure of (d), and the lower resist layer was not developed during the development of (g).

[0118]Example 1 No separator layer, integrated NQ as lower resist layer
This is the case when a D novolac resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtering film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, an integral type NQ is used.
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(F) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(G) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

As a result, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern of μm was obtained. In this case, the pattern edge portion on the lower resist pattern side of the upper resist pattern tended to collapse.

(H) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(I) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputter) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(J) It was lifted off by rocking and immersing in acetone, and a continuous pattern film without burrs of NiFe and Au was obtained.

Incidentally, FIG. 6 shows an example of a two-layer resist pattern formed in (g) of this embodiment with a scanning electron microscope (SE
FIG. 7 is a SEM photograph taken in (M), FIG. 7 is a SEM photograph showing a state in which 5.5 μm-thick alumina is sputtered on the two-layer resist pattern, and FIG. 8 shows the two-layer resist pattern and the alumina thereon. It is a SEM photograph which shows the state which lifted off.

[0131]Example 2 There is no separator layer, and the lower resist layer is hydrophobic and integrated.
This is the case where a type NQD novolac resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering apparatus: SPF-740H manufactured by Nichiden Anerva Co., Ltd.
(DC Sputtering) Sputtering conditions: Sputtered film NiFe target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(F) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(G) 2.38% TMAHaq, which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

This gives the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern of μm was obtained. In this case, the pattern edge portion on the lower resist pattern side of the upper resist pattern tended to collapse.

(H) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling equipment: Commonwealth's 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(I) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputter) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(J) It was lifted off by rocking and immersing in acetone, and a continuous pattern film of NiFe and Au free of burrs was obtained.

[0143]Example 3 There is no separator layer, and there is no
When using a resist mainly composed of xystyrene resin,
It is the case.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SEPR-IX020 manufactured by Shin-Etsu Chemical Co., Ltd., which is a resist containing polyhydroxystyrene resin as a main component, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds. did.

(D) Exposure was performed under the following conditions: Exposure equipment: Nikon NSR-TFHEX14 NA
= 0.4, σ = 0.4, λ = 248 nm Mask: Line pattern with a dark area of 10 μm Dose: 250 mJ / cm^Two Focus: 0 μm.

(E) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(F) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(G) An alkaline aqueous solution (developing solution) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

As a result, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern of μm was obtained. In this case, the pattern edge portion on the lower resist pattern side of the upper resist pattern tended to collapse.

(H) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(I) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(J) It was lifted off by rocking and immersing in acetone, and a continuous pattern film without burrs of NiFe and Au was obtained.

[0155]Example 4 Integral NQ as a separator layer in alkaline environment
Using the azo bonding layer of D novolak resist, lower resist
When an integrated NQD novolac resist is used as the coating layer
It is the case.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, an integral type NQ is used.
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) 2.38% TMAHaq. Which is an alkaline aqueous solution (developer). Was applied to the surface of the lower resist layer, left for 3 minutes, washed with water and dried. By this treatment, the azo binding layer of the integral type NQD novolak resist in an alkaline environment was formed on the lower resist layer surface.

(E) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (e) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) An alkaline aqueous solution (developing solution) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputter) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0168]Example 5 Integral hydrophobicity in alkaline environment as separator layer
Type NQD novolac resist azo bonding layer, lower side
Hydrophobic integrated NQD Novolac Regis as resist layer
This is the case when G.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was applied to the surface of the lower resist layer, left for 3 minutes, washed with water and dried. By this treatment, the azo binding layer of the hydrophobic integral type NQD novolak resist in an alkaline environment was formed on the surface of the lower resist layer.

(E) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (e) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% -TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling equipment: Commonwealth's 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputter) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0181]Example 6 A carbon layer is used as a separator layer, and a lower resist layer is used.
In this case, the NQD novolac resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, AZP of Clariant Japan Co., Ltd., which is an NQD novolac resist
4620 was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Carbon was vapor-deposited to form a separator layer of carbon having a thickness of 0.002 μm. Vapor deposition apparatus: SC-70 manufactured by SANYU DENSHI
8C / DCS.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolac resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was carried out under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) A part of the separator layer made of carbon was removed by an ashing process, an ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C., RF power 200 W, pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas Flow rate 10 sccm (j) 2.38% -alkaline aqueous solution (developer)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

As a result, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0195]Example 7 A carbon layer is used as a separator layer, and a lower resist layer is used.
When using the integrated NQD novolac resist
It

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, integral NQ
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Carbon was vapor-deposited to form a separator layer of carbon having a thickness of 0.002 μm. Vapor deposition apparatus: SC-70 manufactured by SANYU DENSI
8C / DCS.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) An aqueous alkaline solution (developing solution) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Ashing apparatus in which a part of the separator layer made of carbon was removed by ashing treatment: System 10 manufactured by Matrix Co.
Four (J) 2.38%, which is an alkaline aqueous solution (developer)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0209]Example 8 A carbon layer is used as a separator layer, and a lower resist layer is used.
When using a hydrophobic integrated NQD novolak resist
Is.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Carbon was vapor-deposited to form a separator layer made of carbon having a thickness of 0.002 μm. Vapor deposition apparatus: SC-70 manufactured by SANYU DENSHI
8C / DCS.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) An alkaline aqueous solution (developing solution) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Ashing treatment for removing a part of the separator layer made of carbon, ashing apparatus: System 10 manufactured by Matrix Co.
Four (J) 2.38%, which is an alkaline aqueous solution (developer)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth Inc. 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0223]Example 9 A carbon layer is used as a separator layer, and a lower resist layer is used.
Regis mainly composed of polyhydroxystyrene resin
This is the case when G.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SEPR-IX020 manufactured by Shin-Etsu Chemical Co., Ltd., which is a resist containing polyhydroxystyrene resin as a main component, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds. did.

(D) Exposure was performed under the following conditions, Exposure equipment: Nikon NSR-TFHEX14 NA
= 0.4, σ = 0.4, λ = 248 nm Mask: Line pattern with a dark area of 10 μm Dose: 250 mJ / cm^Two Focus: 0 μm.

(E) Carbon was vapor-deposited to form a separator layer made of carbon with a thickness of 0.002 μm. Vapor deposition apparatus: SC-70 manufactured by SANYU DENSHI
8C / DCS.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Ashing treatment for removing a part of the separator layer made of carbon, ashing apparatus: System 10 manufactured by Matrix Co.
Four (J) 2.38%, which is an alkaline aqueous solution (developer)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500 W, 500 mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0237]Example 10 As a separator layer, a polyvinyl acetate that is a water-soluble resin layer
A tar layer is used, and NQD novolat is used as the lower resist layer.
This is the case when a photoresist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, NQD novolac resist AZP manufactured by Clariant Japan Co., Ltd.
4620 was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) A 1% aqueous solution of polyvinyl acetal resin S-REC KW3 manufactured by Sekisui Chemical Co., Ltd. was spin-coated to a thickness of 0.3 μm and prebaked at 80 ° C. for 90 seconds to form a separator layer.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq, which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0250]Example 11 As a separator layer, a polyvinyl acetate that is a water-soluble resin layer
The tar layer is used, and the integrated NQD package is used as the lower resist layer.
This is the case when a volac resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtering film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, an integral type NQ is used.
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) A 1% aqueous solution of polyvinyl acetal resin S-REC KW3 manufactured by Sekisui Chemical Co., Ltd. was spin-coated to a thickness of 0.3 μm and prebaked at 80 ° C. for 90 seconds to form a separator layer.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

This gives the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling apparatus: Commonwealth's 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0263]Example 12 As a separator layer, a polyvinyl acetate that is a water-soluble resin layer
A tar layer is used, and the hydrophobic resist type N is used as the lower resist layer.
This is the case where a QD novolac resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) A 1% aqueous solution of polyvinyl acetal resin S-REC KW3 manufactured by Sekisui Chemical Co., Ltd. was spin-coated to a thickness of 0.3 μm and prebaked at 80 ° C. for 90 seconds to form a separator layer.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was carried out under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

As a result, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling apparatus: Commonwealth's 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0276]Example 13 As a separator layer, a polyvinyl acetate that is a water-soluble resin layer
Tar layer is used, and polyhydroxy is used as the lower resist layer.
When using a resist containing styrene resin as the main component
is there.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SEPR-IX020 manufactured by Shin-Etsu Chemical Co., Ltd., which is a resist containing polyhydroxystyrene resin as a main component, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds. did.

(D) Exposure was performed under the following conditions, Exposure equipment: Nikon NSR-TFHEX14 NA
= 0.4, σ = 0.4, λ = 248 nm Mask: Line pattern with a dark area of 10 μm Dose: 250 mJ / cm^Two Focus: 0 μm.

(E) A 1% aqueous solution of polyvinyl acetal resin S-REC KW3 manufactured by Sekisui Chemical Co., Ltd. was spin-coated to a thickness of 0.3 μm and prebaked at 80 ° C. for 90 seconds to form a separator layer.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) An aqueous alkaline solution (developing solution) 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling apparatus: Commonwealth's 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film without burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0289]Example 14 The milling alteration layer is used as the separator layer, and the lower resist
When NQD novolac resist is used as the coating layer
It

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, NQD novolac resist AZP manufactured by Clariant Japan Co., Ltd.
4620 was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Milling was performed under the following conditions to form a separator layer of a milling alteration layer on the surface of the lower resist layer. Milling apparatus: Commonwealth 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq, which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) A part of the milling alteration layer was removed by the ashing process, ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C., RF power 200 W pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate. 2.10% of an alkaline aqueous solution (developing solution) of 10 sccm (j)-
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) By rocking and immersing in acetone, lift-off was performed, and a continuous pattern film of NiFe and Au without burrs was obtained.

[0303]Example 15 The milling alteration layer is used as the separator layer, and the lower resist
When an integrated NQD novolac resist is used as the coating layer
It is the case.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, an integral type NQ is used.
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Milling was performed under the following conditions to form a separator layer by a milling alteration layer on the surface of the lower resist layer. Milling device: Commonwealth 8C Milling conditions: Power 500W, 500mA Gas pressure 3mTorr Angle 10 °.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolac resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq, which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) A part of the milling alteration layer was removed by ashing treatment, ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C., RF power 200 W pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate. 2.10% of an alkaline aqueous solution (developing solution) of 10 sccm (j)-
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth Inc. 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) By rocking and immersing in acetone, lift-off was performed, and a continuous pattern film of NiFe and Au without burrs was obtained.

[0317]Example 16 The milling alteration layer is used as the separator layer, and the lower resist
Hydrophobic integrated NQD novolac resist is used as the coating layer
That is the case.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Milling was performed under the following conditions to form a separator layer by a milling alteration layer on the surface of the lower resist layer. Milling apparatus: Commonwealth 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) An aqueous alkaline solution (developing solution) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Ashing treatment to remove a part of the milling-altered layer, ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C., RF power 200 W, pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate. 2.10% of an alkaline aqueous solution (developing solution) of 10 sccm (j)-
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0331]Example 17 The milling alteration layer is used as the separator layer, and the lower resist
The main layer is polyhydroxystyrene resin
This is the case when a resist that uses

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SEPR-IX020 manufactured by Shin-Etsu Chemical Co., Ltd., which is a resist containing polyhydroxystyrene resin as a main component, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds. did.

(D) Exposure was performed under the following conditions, Exposure equipment: Nikon NSR-TFHEX14 NA
= 0.4, σ = 0.4, λ = 248 nm Mask: Line pattern with a dark area of 10 μm Dose: 250 mJ / cm^Two Focus: 0 μm.

(E) Milling was performed under the following conditions to form a separator layer of a milling-altered layer on the surface of the lower resist layer. Milling apparatus: Commonwealth 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) A portion of the milling alteration layer was removed by ashing treatment, ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C., RF power 200 W, pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate. 2.10% of an alkaline aqueous solution (developing solution) of 10 sccm (j)-
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(K) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(L) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputter) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(M) It was lifted off by oscillating and immersing in acetone, and a continuous pattern film free of burrs of NiFe and Au was obtained.

[0345]Example 18 A metal layer made of Ni is used as the separator layer, and
When NQD novolac resist is used as the strike layer
is there.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, NQD novolac resist AZP manufactured by Clariant Japan Co., Ltd.
4620 was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Sputtering under the following conditions,
Ni having a thickness of 0.05 μm was formed on the lower resist layer. Sputtering device: SPF-740H (DC sputtering) manufactured by Nidec Anerva Sputtering conditions: Target Ni power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq, which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Milling was performed under the following conditions to obtain Ni
Milling apparatus: Commonwealth Co., Ltd. 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Ashing treatment to remove milling-altered layer Ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C. RF power 200 W pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate 10 sccm (k 2.38% -which is an alkaline aqueous solution (developing solution)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(L) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(M) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(N) It was lifted off by rocking and immersing in acetone, and a continuous pattern film without burrs of NiFe and Au was obtained.

[0360]Example 19 A metal layer made of Ni is used as the separator layer, and
The integrated NQD novolac resist was used as the strike layer.
This is the case.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, an integral type NQ is used.
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Sputtering was carried out under the following conditions,
Ni having a thickness of 0.05 μm was formed on the lower resist layer. Sputtering device: SPF-740H (DC sputtering) manufactured by Nidec Anerva Sputtering conditions: Target Ni power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was carried out under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Milling was performed under the following conditions to obtain Ni
Milling apparatus: Commonwealth Co., Ltd. 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Ashing treatment to remove milling-affected layer Ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C. RF power 200 W pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate 10 sccm (k 2.38% -which is an alkaline aqueous solution (developing solution)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

This gives the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(L) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling equipment: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(M) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering apparatus: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(N) By rocking and immersing in acetone, lift-off was performed, and a continuous pattern film without burrs of NiFe and Au was obtained.

[0375]Example 20 A metal layer made of Ni is used as the separator layer, and
Hydrophobic integrated NQD novolac resist as strike layer
This is the case when used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) Sputtering was performed under the following conditions,
Ni having a thickness of 0.05 μm was formed on the lower resist layer. Sputtering device: SPF-740H (DC sputtering) manufactured by Nidec Anerva Sputtering conditions: Target Ni power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) An alkaline aqueous solution (developer) of 2.38% -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Milling was performed under the following conditions to obtain Ni
Milling apparatus: Commonwealth Co., Ltd. 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Ashing treatment to remove milling-altered layer Ashing apparatus: System 104 manufactured by Matrix, Inc. Ashing conditions: substrate temperature 50 ° C. RF power 200 W pressure 1.5 Torr O ₂ gas flow rate 100 sccm CF ₄ gas flow rate 10 sccm (k 2.38% -which is an alkaline aqueous solution (developing solution)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

This gives the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(L) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling apparatus: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(M) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(N) It was lifted off by rocking and immersing in acetone, and a continuous pattern film without burrs of NiFe and Au was obtained.

[0390]Example 21 A metal layer made of Ni is used as the separator layer, and
The main component of the strike layer is polyhydroxystyrene resin
This is the case of using a resist that does.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SEPR-IX020 of Shin-Etsu Chemical Co., Ltd., which is a resist containing polyhydroxystyrene resin as a main component, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds. did.

(D) Exposure was performed under the following conditions, Exposure equipment: Nikon NSR-TFHEX14 NA
= 0.4, σ = 0.4, λ = 248 nm Mask: Line pattern with a dark area of 10 μm Dose: 250 mJ / cm^Two Focus: 0 μm.

(E) Sputtering under the following conditions,
Ni having a thickness of 0.05 μm was formed on the lower resist layer. Sputtering device: SPF-740H (DC sputtering) manufactured by Nidec Anerva Sputtering conditions: Target Ni power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% alkaline aqueous solution (developing solution) -TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

(I) Milling was performed under the following conditions to obtain Ni
Milling apparatus: Commonwealth Co., Ltd. 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Ashing treatment to remove milling-affected layer, ashing apparatus: System 10 manufactured by Matrix Co.
Four (K) 2.38% which is an alkaline aqueous solution (developing solution)
TMAHaq. Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(L) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(M) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(N) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by shaking and immersing in acetone.

[0405]Modifications of Examples 18 to 21 Instead of Ni, a separator layer of the same thickness was used as the separator layer.
When using mina or aluminum nitride,
Results similar to those of Examples 18 to 21 were obtained.

[0406]Example 22 A lower resist layer using a silylated layer as a separator layer
Is the case where NQD novolac resist is used.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, AZP of Clariant Japan Co., Ltd. which is an NQD novolac resist
4620 was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) The substrate that has been subjected to the above processing and OAP (component: HMDS (Hexamethyl)
and a watch glass containing) are placed in a stainless steel sealed container at 23 ° C., and the surface of the lower resist layer is held for 1 hour while touching the vaporized HMDS,
In addition to HMDS, TMDS (1,1,1,) is used as the silylating agent in which a silylated layer is formed on the surface of the lower resist layer.
3,3-Tetramethyldisilazan
e), DMSDMA (Dimethylsilyldi)
Methylamine), DMSDEA (Dimet
hylsilyldiethylamine), TMS
DMA (Trimethylsilyldimethy)
lamine), TMSDEA (Trimethyls)
iyldiethylamine), B [DMA] M
S (Bis (dimethylamino) methy
lsilane), B [DMA] DS (Bis (dim
ethylamino) dimethylsilan
e), or HMCTS (1,1,3,3,5,5-He
xamethylcyclotrisilazane)
Etc. may be used. The holding temperature may be 15 to 130 ° C. Further, the holding pressure may be increased or decreased.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was performed under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling apparatus: Commonwealth's 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0419]Example 23 A lower resist layer using a silylated layer as a separator layer
When using the integrated NQD novolac resist as
is there.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, an integral type NQ is used.
S of Shin-Etsu Chemical Co., Ltd. which is a D novolak resist
IPR-9740 was spin coated to a thickness of 6 μm and 1
It was prebaked at 10 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) The substrate which has been subjected to the above processing and OAP of Tokyo Ohka (component: HMDS (Hexamethyl)
and a watch glass containing) are placed in a stainless steel sealed container at 23 ° C., and the surface of the lower resist layer is held for 1 hour while touching the vaporized HMDS,
In addition to HMDS, TMDS (1,1,1,) is used as the silylating agent in which a silylated layer is formed on the surface of the lower resist layer.
3,3-Tetramethyldisilazan
e), DMSDMA (Dimethylsilyldi)
Methylamine), DMSDEA (Dimet
hylsilyldiethylamine), TMS
DMA (Trimethylsilyldimethy)
lamine), TMSDEA (Trimethyls)
iyldiethylamine), B [DMA] M
S (Bis (dimethylamino) methy
lsilane), B [DMA] DS (Bis (dim
ethylamino) dimethylsilan
e), or HMCTS (1,1,3,3,5,5-He
xamethylcyclotrisilazane)
Etc. may be used. The holding temperature may be 15 to 130 ° C. Further, the holding pressure may be increased or decreased.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was carried out under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth 8C Milling conditions: Power 500W, 500mA Gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) A continuous pattern film free from burrs of NiFe and Au was obtained by lifting off by rocking and immersing in acetone.

[0432]Example 24 A lower resist layer using a silylated layer as a separator layer
A hydrophobic integrated NQD novolak resist was used as
This is the case.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on the substrate under the following conditions: Sputtering device: SPF-740H (DC sputter) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(D) Exposure was performed under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 10 μm Dose: 600mJ / cm^Two Focus: 0 μm.

(E) The substrate that has been subjected to the above processing and OAP of Tokyo Ohka (component: HMDS (Hexamethyl)
and a watch glass containing) are placed in a stainless steel sealed container at 23 ° C., and the surface of the lower resist layer is held for 1 hour while touching the vaporized HMDS,
In addition to HMDS, TMDS (1,1,1,) is used as the silylating agent in which a silylated layer is formed on the surface of the lower resist layer.
3,3-Tetramethyldisilazan
e), DMSDMA (Dimethylsilyldi)
Methylamine), DMSDEA (Dimet
hylsilyldiethylamine), TMS
DMA (Trimethylsilyldimethy)
lamine), TMSDEA (Trimethyls)
iyldiethylamine), B [DMA] M
S (Bis (dimethylamino) methy
lsilane), B [DMA] DS (Bis (dim
ethylamino) dimethylsilan
e), or HMCTS (1,1,3,3,5,5-He
xamethylcyclotrisilazane)
Etc. may be used. The holding temperature may be 15 to 130 ° C. Further, the holding pressure may be increased or decreased.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was carried out under the following conditions: Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: Power 500W, 500 mA Gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) It was lifted off by rocking and immersing in acetone to obtain a continuous pattern film of NiFe and Au without burrs.

[0445]Example 25 A lower resist layer using a silylated layer as a separator layer
As a main component of polyhydroxystyrene resin
This is the case when using a gist.

(A) Si was prepared as a substrate.

(B) As a film to be milled, NiFe having a thickness of 0.5 μm was sputtered on a substrate under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anerva Co. Sputtering condition: Sputtered film NiFe Target NiFe power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(C) As the lower resist layer, SEPR-IX020 manufactured by Shin-Etsu Chemical Co., Ltd., which is a resist containing polyhydroxystyrene resin as a main component, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds. did.

(D) Exposure was performed under the following conditions, Exposure equipment: Nikon NSR-TFHEX14 NA
= 0.4, σ = 0.4, λ = 248 nm Mask: Line pattern with a dark area of 10 μm Dose: 250 mJ / cm^Two Focus: 0 μm.

(E) The substrate which has been subjected to the above processing and OAP of Tokyo Ohka (component: HMDS (Hexamethyl)
and a watch glass containing) are placed in a stainless steel sealed container at 23 ° C., and the surface of the lower resist layer is held for 1 hour while touching the vaporized HMDS,
In addition to HMDS, TMDS (1,1,1,) is used as the silylating agent in which a silylated layer is formed on the surface of the lower resist layer.
3,3-Tetramethyldisilazan
e), DMSDMA (Dimethylsilyldi)
Methylamine), DMSDEA (Dimet
hylsilyldiethylamine), TMS
DMA (Trimethylsilyldimethy)
lamine), TMSDEA (Trimethyls)
iyldiethylamine), B [DMA] M
S (Bis (dimethylamino) methy
lsilane), B [DMA] DS (Bis (dim
ethylamino) dimethylsilan
e), or HMCTS (1,1,3,3,5,5-He
xamethylcyclotrisilazane)
Etc. may be used. The holding temperature may be 15 to 130 ° C. Further, the holding pressure may be increased or decreased.

(F) As the upper resist layer, SIPR-9281 manufactured by Shin-Etsu Chemical Co., Ltd., which is a hydrophobic integrated NQD novolak resist, was spin-coated to a thickness of 6 μm and prebaked at 110 ° C. for 180 seconds.

(G) Exposure was carried out under the following conditions, Exposure device: Nikon NSR-TFHi12 NA =
0.4, σ = 0.4, λ = 365 nm Mask: Line pattern with a dark area of 30 μm
(Center coincides with the dark part of (d) in the width direction) Dose: 600mJ / cm^Two Focus: 0 μm.

(H) 2.38% TMAHaq. Which is an alkaline aqueous solution (developing solution). Was developed by the paddle method for 50 seconds × 5 times, washed with water and dried.

Thus, the width of the upper resist pattern:
30 μm, width of lower resist pattern: 10 μm, width of undercut: 10 μm, height of undercut: 6
A two-layer resist pattern having a good shape of μm was obtained.

(I) Using this two-layer resist pattern as a mask, milling was performed under the following conditions to etch the film to be milled, NiFe. Milling device: Commonwealth's 8C Milling conditions: power 500 W, 500 mA gas pressure 3 mTorr angle 10 °.

(J) Using the two-layer resist pattern as a mask, Au having a thickness of 1 μm was sputtered under the following conditions: Sputtering device: SPF-740H (DC sputtering) manufactured by Nichiden Anelva Sputtering condition: Sputtered film Au target Au Power 1000 W Ar flow rate 50 sccm Gas pressure 2.0 mTorr.

(K) Lifted off by rocking and immersing in acetone, and a continuous pattern film of NiFe and Au without burrs was obtained.

The embodiments and examples described above are merely illustrative of the present invention and are not restrictive, and the present invention can be implemented in various other modified modes and modified modes. . Therefore, the scope of the present invention is defined only by the claims and their equivalents.

[0459]

As described above in detail, according to the present invention, a method of forming a resist pattern including a lower resist pattern and an upper resist pattern is performed by using the lower resist pattern as an integral NQD novolac resist material, a hydrophobic It is formed of a polymer integrated NQD novolac resist material or a resist material containing polyhydroxystyrene resin as a main component. By using such a material for the lower resist pattern, the film thickness can be reduced to, for example, 10 μm.
The material can be thickened to a certain degree, and since this material has solvent resistance, intermixing does not occur at the interface with the upper resist pattern, so that a resist pattern having a good shape can be obtained. Therefore, a relatively thick film can be patterned into a good shape.

According to the present invention, the method for forming a resist pattern including a lower resist pattern, an upper resist pattern, and a separator pattern provided between the lower resist pattern and the upper resist pattern is a lower resist. The pattern is a positive resist material, an NQD novolac resist material, an integral NQD novolac resist material, a hydrophobic integral NQD novolac resist material,
Alternatively, it is formed of a resist material containing a polyhydroxystyrene resin as a main component. By using such a material for the lower resist pattern, the film thickness can be increased to, for example, about 10 μm. Moreover, since the separator pattern is provided, intermixing does not occur at the interface with the upper resist pattern, so that a resist pattern having a good shape can be obtained. Therefore, a relatively thick film can be patterned into a good shape.

[Brief description of drawings]

FIG. 1 is a process chart illustrating a method of forming a thin film having a through hole patterned by a lift-off method as a first embodiment of the present invention.

FIG. 2 is a process diagram illustrating a method of forming a thin film having through holes patterned by a lift-off method as a second embodiment of the present invention.

FIG. 3 is a process diagram illustrating a method of forming a thin film having a through hole patterned by a lift-off method as a third embodiment of the present invention.

FIG. 4 is a process diagram illustrating a method of forming a thin film having patterned through holes by a lift-off method as a fourth embodiment of the present invention.

FIG. 5 is a process diagram illustrating a method of forming a thin film having through holes patterned by a lift-off method as a fifth embodiment of the present invention.

FIG. 6 is an SEM photograph of an example of a two-layer resist pattern formed in an example of the present invention.

7 is an SEM photograph showing a state in which alumina is sputtered on the two-layer resist pattern of FIG.

8 is an SEM photograph showing a state in which the two-layer resist pattern of FIG. 7 and alumina on the resist pattern are lifted off.

[Explanation of symbols]

10, 20, 30, 40, 50 Substrate 11, 21, 31, 41, 51 Lower resist layer 11 ', 21', 31 ', 41', 51 'Lower resist pattern 12, 14, 22, 24, 32 , 34, 42, 44, 5
2, 54 masks 13, 23, 33, 43, 53 upper resist layers 13 ', 23', 33 ', 43', 53 'upper resist patterns 15, 25, 35, 45, 55 two-layer resist patterns 16, 26, 36, 46, 56 Patterned film 16 ', 26', 36 ', 46', 56 'Patterned thin film 37, 47, 57 Separator layer 37', 47 ', 57' Separator pattern

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/027 H01L 21/30 573 502R F term (reference) 2H025 AB16 AB17 AC01 AD03 BE02 DA11 DA13 FA03 FA17 FA44 2H096 AA25 AA27 BA09 BA10 BA20 EA02 EA03 GA08 HA28 JA04 KA02 KA03 KA06 KA08 KA09 KA14 5D033 BA39 DA07 DA31 5D034 BA02 DA07 5F046 AA20 JA04 JA22 LA12 LA18 MA12

Claims (23)

[Claims] 1. A lower resist pattern formed by an integral naphthoquinone diazide novolac resist material, a hydrophobic integral naphthoquinone diazid novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component, and the lower resist. An upper resist pattern formed on the pattern, the resist pattern. 2. A positive resist material, a naphthoquinone diazide novolac resist material, an integral naphthoquinone diazide novolac resist material, a hydrophobic integral naphthoquinone diazide novolac resist material, or a resist material containing a polyhydroxystyrene resin as a main component. A lower resist pattern, a separator pattern made of an organic material or an inorganic material patterned on the lower resist pattern, and an upper resist pattern formed on the separator pattern. . 3. The upper resist pattern is mainly composed of a positive resist material, a naphthoquinone diazide novolac resist material, an integral naphthoquinone diazide novolac resist material, a hydrophobic integral naphthoquinone diazide novolac resist material, or a polyhydroxystyrene resin. The resist pattern according to claim 1 or 2, wherein the resist pattern is formed of a resist material. 4. A method of forming a resist pattern including a lower resist pattern and an upper resist pattern, comprising:
The lower resist pattern is formed of an integral naphthoquinone diazide novolac resist material, a hydrophobic integral naphthoquinone diazide novolac resist material, or a resist material containing polyhydroxystyrene resin as a main component. Method. 5. After laminating the lower resist layer on the substrate,
The lower resist layer is exposed to a predetermined pattern, an upper resist layer is laminated on the exposed lower resist layer, the upper resist layer is exposed to a predetermined pattern, and then developed to obtain the above-mentioned lower resist layer. The method according to claim 4, wherein a side resist pattern and the upper resist pattern are formed. 6. A lower resist layer and an upper resist layer having a lower sensitivity than that of the lower resist layer are laminated on a substrate, and then the lower resist layer and the upper resist layer are subjected to two-step exposure in predetermined patterns different from each other. 5. The method according to claim 4, wherein the lower resist pattern and the upper resist pattern are formed by developing and then developing. 7. A method for forming a resist pattern including a lower resist pattern, an upper resist pattern, and a separator pattern provided between the lower resist pattern and the upper resist pattern, wherein the lower resist pattern Is formed of a positive resist material, a naphthoquinone diazide novolac resist material, an integral naphthoquinone diazide novolac resist material, a hydrophobic integral naphthoquinone diazide novolac resist material, or a resist material containing polyhydroxystyrene resin as a main component. Forming a resist pattern. 8. After laminating the lower resist layer on the substrate,
The lower resist layer is exposed to a predetermined pattern, a separator layer and an upper resist layer are laminated on the exposed lower resist layer, the upper resist layer is exposed to a predetermined pattern, and then developed. The method according to claim 7, wherein the lower resist pattern, the separator pattern, and the upper resist pattern are formed by removing a part of the separator layer. 9. After laminating the lower resist layer on the substrate,
A separator layer is formed on the surface of the lower resist layer, the lower resist layer is exposed to a predetermined pattern, an upper resist layer is laminated on the exposed lower resist layer, and then the upper resist layer is predetermined. Pattern, then developed,
The method according to claim 7, wherein the lower resist pattern, the separator pattern, and the upper resist pattern are formed by removing a part of the separator layer. 10. A lower resist layer, a separator layer transparent to exposure light, and an upper resist layer having a lower sensitivity than the lower resist layer are laminated on a substrate, and then the lower resist layer and the upper resist layer. Are subjected to two-stage exposure in predetermined patterns different from each other, and then developed to remove a part of the separator layer, thereby forming the lower resist pattern, the separator pattern and the upper resist pattern. The method according to claim 7. 11. The lower resist pattern is formed of an integral type naphthoquinone diazide novolac resist material with a hydrophobic integral type naphthoquinone diazide novolac resist material, and the separator pattern is formed with an integral type naphthoquinone diazide novolac resist material or a hydrophobic substance in an alkaline environment. 11. The method according to claim 9 or 10, characterized in that it is formed with an azo-bonding layer of a polymer-integrated naphthoquinone diazidonovolac resist material. 12. The method according to claim 7, wherein the separator pattern is formed of carbon or diamond-like carbon. 13. The method according to claim 7, wherein the separator pattern is formed of a water-soluble resin layer or a silylated layer. 14. The method according to claim 7, wherein the separator pattern is formed of a heat-altered layer. 15. The method according to claim 11, 13 or 14, wherein a part of the separator layer is removed by development to form the separator pattern. 16. The method according to claim 12, wherein the separator pattern is formed by removing a part of the separator layer by ashing. 17. The method according to claim 7, wherein the separator pattern is made of metal. 18. The method according to claim 7, wherein the separator pattern is formed of an oxide film or a nitride film. 19. The method according to claim 17, wherein a part of the separator layer is removed by milling or reactive ion etching to form the separator pattern. 20. The method of claim 17, wherein the separator pattern is formed by removing a part of the separator layer by wet etching. 21. The main component of the upper resist pattern is a positive resist material, a naphthoquinone diazide novolac resist material, an integral naphthoquinone diazide novolac resist material, a hydrophobic integral naphthoquinone diazide novolac resist material, or a polyhydroxystyrene resin. 21. The method according to claim 4, wherein the resist material is formed of a resist material. 22. A thin film formed by the method according to claim 4, wherein the patterning target film is patterned using a resist pattern, and then the resist pattern is removed. Patterning method. 23. A method of manufacturing a thin film magnetic head, comprising forming a thin film pattern by the patterning method according to claim 22.