JP2003129283A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003129283A5 JP2003129283A5 JP2001320090A JP2001320090A JP2003129283A5 JP 2003129283 A5 JP2003129283 A5 JP 2003129283A5 JP 2001320090 A JP2001320090 A JP 2001320090A JP 2001320090 A JP2001320090 A JP 2001320090A JP 2003129283 A5 JP2003129283 A5 JP 2003129283A5
- Authority
- JP
- Japan
- Prior art keywords
- plating
- storage tank
- tank
- processing
- permeate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
また、本発明の半導体装置の製造方法は、（ａ）半導体基板を準備する工程と、（ｂ）前記半導体基板を、貯液槽と処理槽とを有するメッキ処理装置であって、前記貯液槽と処理槽との間に、気体を透過させるが液体を透過させない脱気装置を有するメッキ処理装置に設置する工程と、（ｃ）前記脱気装置により脱気されたメッキ液を用いて、前記半導体基板上の所望の領域に金属膜を形成する工程と、を有する。このメッキ液として、ノンシアン系のメッキ液を用いてもよい。 Further, a method of manufacturing a semiconductor device according to the present invention is (a) a step of preparing a semiconductor substrate, (b) a plating treatment apparatus having a semiconductor tank, a liquid storage tank and a processing tank, and the liquid storage between the tank and the processing tank, a step is to transmit the gas to be placed in the plating apparatus having not degassing apparatus is transmitted through a liquid, the plating solution is degassed by (c) the degasser using Forming a metal film in a desired region on the semiconductor substrate. As this plating solution, a non-cyan plating solution may be used.
Claims (5)
前記循環路に、気体を透過させるが液体を透過させない中空糸膜を用いた脱気装置を設けたことを特徴とするメッキ処理装置。A plating processing apparatus having a processing tank and a circulation path through which a plating solution circulates,
The plating processing apparatus is characterized in that a degassing device using a hollow fiber membrane that allows gas to permeate but does not allow liquid to permeate is provided in the circulation path.
前記貯液槽もしくは貯液槽と処理槽との間に、気体を透過させるが液体を透過させない中空糸膜を用いた脱気装置を設けたことを特徴とするメッキ処理装置。A plating apparatus having a storage tank and a processing tank, wherein
A plating treatment apparatus characterized in that a degassing device using a hollow fiber membrane that allows gas to permeate but does not allow liquid to permeate is provided between the storage tank or the storage tank and the processing tank.
前記貯液槽と処理槽との間、もしくは貯液槽に、気体を透過させるが液体を透過させない中空糸膜を用いた脱気装置を有し、
前記脱気装置の中空糸膜は、導電性物質を加えることにより導電性とし、そこに、アノード電位が印加されていることを特徴とするメッキ処理装置。A plating apparatus having a storage tank and a processing tank, wherein
Between the storage tank and the processing tank, or in the storage tank, it has a degassing device using a hollow fiber membrane that allows gas to permeate but does not allow liquid to permeate,
The hollow fiber membrane of the degassing device is made conductive by adding a conductive material, and an anode potential is applied thereto.
（ｂ）前記半導体基板を、貯液槽と処理槽とを有するメッキ処理装置であって、
前記貯液槽と処理槽との間に、気体を透過させるが液体を透過させない中空糸膜を用いた脱気装置を有するメッキ処理装置に設置する工程と、
（ｃ）前記脱気装置により脱気されたメッキ液を用いて、前記半導体基板上の所望の領域に金属膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。(A) preparing a semiconductor substrate;
(B) A plating processing apparatus having a storage tank and a processing tank for the semiconductor substrate, wherein
Installing in a plating apparatus having a degassing device using a hollow fiber membrane that allows gas to pass but does not allow liquid to pass between the liquid storage tank and the processing tank;
(C) forming a metal film on a desired region of the semiconductor substrate using the plating solution degassed by the degassing device;
A method of manufacturing a semiconductor device, comprising:
（ｂ）前記半導体基板を、貯液槽と処理槽とを有するメッキ処理装置であって、
前記貯液槽と処理槽との間に、気体を透過させるが液体を透過させない脱気装置を有するメッキ処理装置に設置する工程と、
（ｃ）前記脱気装置により脱気されたメッキ液を用いて、前記半導体基板上の所望の領域に金属膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。(A) preparing a semiconductor substrate;
(B) A plating processing apparatus having a storage tank and a processing tank for the semiconductor substrate, wherein
Between the processing tank and the liquid storage tank, a step is to transmit the gas to be placed in the plating apparatus having not degassing apparatus is transmitted through a liquid,
A step of using a main Tsu key solution is degassed, thereby forming a metal film on a desired region on the semiconductor substrate by (c) the degasser,
A method of manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001320090A JP2003129283A (en) | 2001-10-18 | 2001-10-18 | Plating device and process for manufacturing semiconductor device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001320090A JP2003129283A (en) | 2001-10-18 | 2001-10-18 | Plating device and process for manufacturing semiconductor device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003129283A JP2003129283A (en) | 2003-05-08 |
| JP2003129283A5 true JP2003129283A5 (en) | 2005-06-09 |
Family
ID=19137529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001320090A Pending JP2003129283A (en) | 2001-10-18 | 2001-10-18 | Plating device and process for manufacturing semiconductor device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003129283A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4171368B2 (en) * | 2003-08-11 | 2008-10-22 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
| US7615255B2 (en) * | 2005-09-07 | 2009-11-10 | Rohm And Haas Electronic Materials Llc | Metal duplex method |
| KR100744417B1 (en) | 2006-08-11 | 2007-07-30 | 동부일렉트로닉스 주식회사 | Apparatus for fabricating semiconductor device |
| US8962085B2 (en) | 2009-06-17 | 2015-02-24 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
| US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
| US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| CN103866365A (en) * | 2012-12-11 | 2014-06-18 | 诺发系统公司 | Electroplating filling vacuum plating tank |
| US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| CN104005077B (en) * | 2014-05-14 | 2016-11-09 | 上海交通大学 | The electroplanting device of optimized temperature field distribution and electro-plating method thereof |
| US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831460B2 (en) * | 1987-11-13 | 1996-03-27 | 富士通株式会社 | Plating equipment |
| JPH0717334U (en) * | 1993-08-27 | 1995-03-28 | 三菱マテリアル株式会社 | Effervescent liquid bubble removal device |
| JP3985065B2 (en) * | 1997-05-14 | 2007-10-03 | 忠弘 大見 | Porous silicon substrate forming method and porous silicon substrate forming apparatus |
| EP2017374A3 (en) * | 2000-03-17 | 2011-04-27 | Ebara Corporation | Plating apparatus and method |
| JP2002363792A (en) * | 2001-06-01 | 2002-12-18 | Tokyo Electron Ltd | Liquid treatment system and liquid treatment method |
-
2001
- 2001-10-18 JP JP2001320090A patent/JP2003129283A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003129283A5 (en) | ||
| JP2005532164A5 (en) | ||
| US20070029185A1 (en) | Apparatus for producing nanoparticles | |
| JP2007044630A5 (en) | ||
| JP2004519088A (en) | Wafer cleaning method and cleaning solution in single wafer process | |
| TW463219B (en) | Treating method and apparatus utilizing chemical reaction | |
| TWI360586B (en) | Etching solution for titanium or titanium alloy | |
| TW200500500A (en) | Plating apparatus and plating method | |
| CN102762287B (en) | Composite separation membrane and separation membrane element using same | |
| ES2134034T3 (en) | TREATMENT AGENT FOR COPPER SURFACES OR THEIR ALLOYS. | |
| CN1451031A (en) | Method for roughening copper surfaces for bonding to substrates | |
| TW200410763A (en) | Substrate processing apparatus for processing substrates using dense phase gas and sonic waves | |
| EP1975719A3 (en) | Method of forming resist pattern and semiconductor device manufactured with the same | |
| US6955727B2 (en) | Substrate process tank with acoustical source transmission and method of processing substrates | |
| MY197351A (en) | Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same | |
| JP6428806B2 (en) | Semiconductor substrate cleaning apparatus and semiconductor substrate cleaning method | |
| JPH1129794A (en) | Cleaning water for electronic material its reparation, and cleaning of electronic material | |
| JP2003129283A (en) | Plating device and process for manufacturing semiconductor device using the same | |
| JP2005146358A (en) | Etching liquid for titanium or titanium alloy | |
| JP2012204424A (en) | Surface processing method of semiconductor substrate and substrate processing device | |
| JP2009291991A (en) | Method for production oflaminated structure and method of producing inkjet recording head | |
| ES2185389T3 (en) | METHOD AND APPARATUS FOR THE TREATMENT OF LIQUIDS BY ULTRASONIC VIBRATIONS. | |
| TW460977B (en) | Method of forming photoresist pattern | |
| KR100744417B1 (en) | Apparatus for fabricating semiconductor device | |
| JP2015167906A (en) | Metal ion removal device and liquid cooling device |