JP2003124098A - Projection aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent drop in purge pressure in exposure at a portion near the outer periphery of a wafer or a reticule, and increase in oxygen concentration due to generation of substitution fail. SOLUTION: The projection aligner has a movable stage 4, a chucking apparatus 14 that is arranged on the stage for retaining a substrate, a first gas-supply apparatus that supplies gas to a position to be exposed on the substrate, and a plane-like members 18a, 19a, 25a, and 25b that are arranged on a plane having the same or nearly the same height as the surface of the substrate while being adjacent to the outer-periphery section of the substrate and are divided into a plurality of portions.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used in a semiconductor manufacturing process, and more particularly to a projection exposure apparatus for projecting and transferring a reticle pattern onto a silicon wafer. The present invention relates to an exposure apparatus that uses a reticle stage and a wafer stage that sequentially move a reticle and a silicon wafer with respect to a projection exposure system during projection exposure.

[0002]

2. Description of the Related Art Conventionally, in the semiconductor manufacturing process,
A projection exposure apparatus that projects and transfers a reticle pattern onto a silicon wafer is used.

Such a conventional projection exposure apparatus is shown in FIGS. 16 to 20.

In FIGS. 16 to 20, reference numeral 101 denotes an illumination system unit, which has an exposure light source and a function of shaping and irradiating exposure light onto a reticle. Reference numeral 102 denotes a reticle stage on which a reticle that is an exposure pattern original plate is mounted, and a reticle scan operation is performed on a wafer at a predetermined reduction exposure magnification ratio. Reference numeral 103 denotes a reduction projection lens, which reduces and projects the original pattern onto a wafer (substrate). A wafer stage 104 is a stage that sequentially and continuously moves a substrate (wafer) for each exposure. Reference numeral 105 denotes an exposure apparatus main body, which is the reticle stage 10
2. Support the reduction projection lens 103 and the wafer stage 104.

Reference numeral 106 denotes a wafer stage purge partition wall and 10
A reticle stage space purge partition wall 7 is a partition wall for replacing the wafer stage and the reticle stage space with helium or nitrogen. The purpose is to expose the F2 laser (λ = 157 nm), which is the exposure light and vacuum ultraviolet light (VUV) in the general air, to the absorption of oxygen in the air and the generation of ozone. It is prevented from being absorbed and producing silicon oxide, or by generating ammonia or silanol due to hydrolysis by organic gas such as siloxane and silazane and moisture in the air, and adhering to the lens glass material to lower the transmittance of exposure light. That is.

In other words, in order to efficiently perform the displacement purge with helium or nitrogen, which is supplied to increase the transmittance of the exposure light, the wafer stage space is closed and the oxygen and water concentrations inside are 100 to 1000 p.
Drop to pm.

Reference numeral 108 denotes a wafer purge nozzle, which is arranged to locally replace the exposed portion on the upper surface of the wafer with high-purity nitrogen gas.
And oxygen of 10 ppm or less, which is lower than the oxygen concentration (100 to 1000 ppm) in the reticle stage purge partition wall 107,
Adjust the water concentration.

Wafer stage purge pipe 109, reticle stage purge pipe 110, wafer purge pipe 111
Is a pipe for supplying purge gas (helium, nitrogen or the like) from the purge gas supply unit 112 to the inside of each partition and the purge nozzle.

In FIG. 17, reference numeral 115 denotes a wafer whose surface is coated with a resist for projecting and transferring a reticle pattern drawn on a reticle substrate through a reduction exposure system. Reference numeral 113 denotes the wafer 115 for the reduction exposure system. A fine movement stage that finely adjusts the optical axis direction, the tilt direction, and the rotation direction around the optical axis. Reference numeral 114 denotes a wafer chuck that supports and fixes the wafer 115 to the fine movement stage 113.
An X bar mirror 6 is a target 117 for measuring the position of the fine movement stage 113 in the X direction by a laser interferometer.
Is a target for similarly measuring the position in the Y direction by a Y-bar mirror, and 118 is an illuminance sensor provided on the upper surface of the fine movement stage 113, which calibrates the illuminance of the exposure light before exposure and uses it for exposure amount correction.

Reference numeral 119 designates a stage reference mark provided on the upper surface of the fine movement stage 113 and provided with a target for stage alignment measurement. Reference numeral 120 designates the fine movement stage 113.
An X linear motor for driving and moving the X-direction in the X-direction, 121 an X guide for guiding the movement of the fine movement stage 113 in the X-axis direction, 122 a Y guide for moving and guiding the X guide 121 and the fine movement stage 113 in the Y direction, 123, 124 Is a Y linear motor that moves and drives the fine movement stage 113 in the Y direction, and 125 is a stage surface plate that planarly guides the fine movement stage 113.

[0011]

[Problems to be Solved by the Invention]
As shown in (a) and (b), the slit exposure light 126 is irradiated to the center of the exposure optical axis, the wafer purge nozzle 108 is provided above the slit exposure light 126, and the purge gas (nitrogen or the like) ejected from the wafer purge nozzle 108 is used. By replacing the upper surface of the wafer 115, the oxygen concentration near the center of the wafer 115 is 10 pp.
We have achieved m. However, in FIG.
As shown in FIG. 20B, and FIGS. 20A and 20B, a shot near the outer peripheral portion of the wafer 115 is shot with the slit exposure light 12.
6 is exposed, a gap of about 1 mm is provided between the wafer purge nozzle 108 and the wafer 115 in the height direction, and between the wafer chucks 114 in the height direction.
There is a gap of about 2 mm. Further, the outer periphery of the conventional wafer chuck 114 has the wafer purge nozzle 108.
Since there is no member for blocking the flow of the purge gas from the vicinity, as a result, the purge gas from the wafer purge nozzle 108 largely leaks from the outer periphery of the wafer chuck 114 during the exposure in the vicinity of the outer periphery of the wafer, and the purge space The pressure decreases, the gas other than the purge gas turbulently flows from the outside, the oxygen concentration rises to about 100 to 1000 ppm, and it becomes impossible to maintain the low oxygen concentration below the specified value (10 ppm or less).

Around the wafer chuck 114, the wafer chuck 114 is formed of a planar member integrally formed in the circumferential direction.
When fixing the flat member to the stage member (wafer chuck support portion, bar mirror support portion) when providing a flat member having substantially the same height as the above, the influence of the flatness on the entire flat member is given to the stage member. Therefore, there is a problem that the stage member or the measuring mirror is deformed.

Alternatively, a planar member may be used as the wafer chuck 11
When the wafer chuck 114 is completely integrated with the wafer chuck 114, there is a risk that a portion that overhangs the wafer chuck 114 on the stage in the outer peripheral direction causes self-deflection and deteriorates the flatness of the wafer chuck 114 itself.

Therefore, the present invention has been made in view of the above-mentioned problems, and an object thereof is to reduce the purge pressure at the time of exposure in the vicinity of the outer periphery of a wafer or reticle and increase the oxygen concentration due to defective replacement. It is to prevent.

[0015]

[Means for Solving the Problems]
In order to achieve the object, an exposure apparatus according to the present invention includes a movable stage, a chuck device arranged on the stage for holding a substrate, and a first device for supplying a gas to the exposed position of the substrate. 1. A gas supply device of No. 1 and a planar member which is arranged adjacent to the outer peripheral portion of the substrate on a plane having the same or substantially the same height as the surface of the substrate and divided into a plurality of members. Is characterized by.

Further, in the exposure apparatus according to the present invention, the substrate is a wafer or a reticle.

Further, the exposure apparatus according to the present invention is characterized in that at least one of the plurality of divided planar members is arranged so as to surround a sensor mounted on the stage.

Further, the exposure apparatus according to the present invention is characterized by further comprising a second gas supply device for supplying a gas in the vicinity of the sensor.

Further, in the exposure apparatus according to the present invention, the second gas supply device supplies gas to the vicinity of the sensor in synchronization with the timing at which the position of the substrate near the sensor is exposed. Is characterized by.

Further, the exposure apparatus according to the present invention is characterized in that at least one of the plurality of divided planar members is arranged so as to surround the reference mark mounted on the stage.

Further, in the exposure apparatus according to the present invention, a third means for supplying gas to the vicinity of the reference mark is provided.
The gas supply device is further provided.

Further, in the exposure apparatus according to the present invention, the third gas supply device supplies gas to the vicinity of the reference mark in synchronization with the timing of exposure of the position near the reference mark on the substrate. It is characterized by doing.

Further, the exposure apparatus according to the present invention is characterized in that at least one of the plurality of divided planar members is constructed integrally with the chuck device.

Further, in the exposure apparatus according to the present invention, the planar member integrally formed with the chuck device is integrally formed with the chuck device by an arm inserted below the chuck device from the outside of the stage. It is characterized in that it is configured to be lifted above the stage.

Further, in the exposure apparatus according to the present invention, at least one of the divided planar members is integrally formed with a mirror serving as a target for measuring the position of the stage. .

In the exposure apparatus according to the present invention, the first gas supply device supplies clean dry air or an inert gas.

Further, the device manufacturing method according to the present invention comprises a step of applying a photosensitive material to a substrate, and a step of transferring a pattern onto the photosensitive material of the substrate coated with the photosensitive material by the above-described exposure apparatus. And a step of developing the substrate on which the pattern is transferred.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

(First Embodiment) FIGS. 1 to 6 are views showing the arrangement of an exposure apparatus according to the first embodiment of the present invention.

In the following description, the term "substrate" is used, but this "substrate" refers to a wafer or reticle.

In FIGS. 1 to 6, reference numeral 1 denotes an illumination system unit, which exposes an exposure light source and exposure light to a reticle (substrate).
It has the function of shaping irradiation. Reference numeral 2 denotes a reticle stage on which a reticle that is an exposure pattern original plate is mounted and scans the reticle with respect to the wafer. A reduction projection lens 3 reduces and projects the original pattern onto a wafer (substrate). Four
Is a stage for sequentially and continuously moving the substrate (wafer) on the wafer stage every exposure. An exposure apparatus main body 5 supports the reticle stage 2, the projection lens 3, and the wafer stage 4.

Reference numeral 6 is a wafer stage purge partition wall, and 7 is a reticle stage space purge partition wall.
And a partition for replacing the space around the reticle stage 2 with helium or nitrogen.

The purpose is to expose the F2 laser (wavelength λ = 157n) which is exposure light and vacuum ultraviolet light (VUV) in general air.
m) is absorbed by oxygen in the air and causes the generation of ozone, is absorbed by silicon impurities in the air to generate silicon oxide, and is mixed with organic gases such as siloxane and silazane that are volatilized from various acids and solvents. This is to prevent ammonia and silanol from being generated due to hydrolysis by moisture in the air, and adhering them to the lens glass material to lower the transmittance of exposure light.

In other words, the wafer stage purge partition 6 and the reticle stage space purge partition 7 are provided so that the purge gas supplied to increase the transmittance of the exposure light, helium or nitrogen, can be efficiently replaced and purged. The stage space is closed and the internal oxygen and water concentrations are reduced to 100 to 1000 ppm.

Reference numeral 8 denotes a wafer purge nozzle, which is arranged to locally replace the exposed portion on the upper surface of the wafer with high-purity nitrogen gas, and has an oxygen concentration in the wafer stage purge partition wall 6 and the reticle stage purge partition wall 7 (100 to 100). The concentration of oxygen and water is 10ppm or less, which is lower than 1000ppm.

The wafer stage purge pipe 9, the reticle stage purge pipe 10, and the wafer purge pipe 11 are pipes for supplying purge gas (helium, nitrogen, etc.) from the purge gas supply unit 12 to the inside of each partition and the purge nozzle.

In FIG. 2, reference numeral 15 is a wafer whose surface is coated with a resist for projecting and transferring a reticle pattern drawn on a reticle substrate through a reduction exposure system. Reference numeral 13 is a wafer of the reduction exposure system. A fine movement stage for finely adjusting the optical axis direction, the tilt direction, and the rotation direction about the optical axis, and 14 is a fine movement stage 1 for the wafer 15.
3 is a wafer chuck that is supported and fixed to the wafer 3. Reference numeral 16 denotes an X bar mirror, which is a target mirror for measuring the position of the fine movement stage in the X direction by a laser interferometer (not shown).
Reference numeral 17 denotes a Y bar mirror, which is also a target mirror for measuring the position in the Y direction.

Reference numeral 18 denotes an illuminance sensor provided on the upper surface of the fine movement stage 13, which calibrates the illuminance of the exposure light before exposure and uses it for exposure amount correction.

Reference numeral 19 is a stage reference mark provided on the upper surface of the fine movement stage 13 and provided with a target for stage alignment measurement. The alignment measuring device (not shown) aligns the original plate and the wafer stage.

Reference numeral 20 is an X linear motor for moving the fine movement stage 13 in the X direction, and reference numeral 21 is an X guide for guiding the movement of the fine movement stage 13 in the X axis direction. Reference numeral 22 is a Y guide for moving and guiding the X guide 21 and the fine movement stage 13 in the Y direction, 23 and 24 are Y linear motors for moving and driving the fine movement stage 13 in the Y direction, and 26 is a fine movement stage 13.
It is a stage surface plate that guides the plane.

As shown in FIG. 3, purge plates 25 a and 25 b are provided adjacent to the outer peripheral portion of the wafer chuck 14 so as to be substantially flush with the surface of the wafer 15 and to the outer peripheral portion of the wafer chuck 14. It forms a purge space.

An illuminance sensor purge plate 18a is also provided on the outer periphery of the illuminance sensor 18, and the wafer 1
5 is substantially flush with the surface of the wafer 5, and a purge space is formed in the outer peripheral portion of the wafer chuck 14.

A stage reference mark purge plate 19a is also provided on the outer peripheral portion of the stage reference mark 19, which is substantially flush with the surface of the wafer 15 and forms a purge space on the outer peripheral portion of the wafer chuck 14. ing.

Here, as shown in FIGS. 4A and 4B, the slit exposure light 27 of the scan exposure system is irradiated to the center of the exposure light axis, and the wafer purge nozzle 8 is provided above the slit exposure light 27. By replacing the upper surface of the wafer 15 with nitrogen by the ejected purge gas (nitrogen or the like),
The oxygen concentration near the center of the wafer 15 has reached 10 ppm or less.

Further, the purge plates 25a and 25b, the illuminance sensor purge plate 18a, the stage reference mark purge plate 19
Since a is provided on the outer peripheral portion of the wafer 15, even when exposure is performed on the peripheral peripheral portion of the wafer 15, FIG.
As shown in (a), (b) and FIGS. 6 (a), (b),
The purge gas does not leak from the outer peripheral portion of the wafer chuck 14 and the pressure in the purge space does not drop. Therefore, the gas other than the purge gas does not turbulently flow from the outside, and the replacement with the nitrogen as the purge gas from the wafer purge nozzle 8 is stably performed.

Therefore, the oxygen concentration can be maintained at 10 ppm or less in the entire region irradiated with the slit exposure light 27.

(Second Embodiment) FIGS. 7 to 9 are views showing a second embodiment of the present invention.

In this embodiment, instead of the wafer chuck 14 of the first embodiment, a purge plate integrated wafer chuck 28 in which a wafer chuck and a purge plate integrated portion 28a which is a part of the purge plate are integrated. By providing the purge chuck, the purge plate-integrated wafer chuck 28 can be attached and detached integrally with the purge plate when the wafer chuck is replaced or cleaned.

The attachment / detachment is performed by a chuck exchange unit 29 shown in FIG. 9, and a purge plate integrated wafer chuck 28 is attached / detached and exchanged as shown by a robot having two forks. In other words, the structure is such that the purge plate in the area where the two forks enter can be withdrawn and attached to the upper part together with the wafer chuck, so that the wafer chuck can be replaced automatically without removing the purge plate around the wafer chuck. become.

(Third Embodiment) FIGS. 10 to 12 show
It is a figure which shows the 3rd Embodiment of this invention.

Here, in addition to the wafer purge nozzle 8 in the vicinity of the illuminance sensor 18 and the stage reference mark 19 of the first embodiment, a new local purge nozzle is provided on the fine movement stage 13 to provide illuminance. Sensor 1
8 and the vicinity of the stage reference mark 19 can be more completely purged.

As shown in FIG. 11, by providing an illuminance sensor purge nozzle 18b in the illuminance sensor purge plate 18a for the illuminance sensor 18, a gap between the illuminance sensor 18 and the illuminance sensor purge plate 18a is provided. It is possible to eject the purge gas and completely replace the air stagnated in the gap around the illuminance sensor 18 with the purge gas.

Further, as shown in FIG. 12, the stage reference mark purge plate 19 is different from the stage reference mark 19.
By providing the stage reference mark purge nozzle 19b in a, the purge gas is jetted into the gap between the stage reference mark 19 and the stage reference mark purge plate 19a, and the air stagnant in the gap is completely replaced by the purge gas. can do.

(Fourth Embodiment) FIGS. 13 to 15 show
It is a figure which shows the 4th Embodiment of this invention.

In this embodiment, a part of the purge plate of the first embodiment is integrated with the X bar mirror 16 and the Y bar mirror 17.

As shown in FIG. 14, by integrating the X bar mirror purge plate 16a on the upper surface of the X bar mirror 16 and also by integrating the Y bar mirror purge plate 17a with the Y bar mirror 17, another The purging plate plane can be formed continuously with the purging plate.

Next, a semiconductor device manufacturing process using the exposure apparatus of the first to fourth embodiments will be described.

FIG. 21 shows the flow of the whole semiconductor device manufacturing process. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask making), a mask is made based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the above mask and wafer. The next step 5 (assembly) is called a post-process, which is a process for making semiconductor chips using the wafer manufactured in step 4, and includes assembly processes (dicing, bonding), packaging processes (chip encapsulation), etc. Including steps. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, semiconductor devices are completed and shipped (step 7).

FIG. 22 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer. Step 16
In (exposure), the circuit pattern is transferred onto the wafer by the above-mentioned exposure apparatus. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are scraped off. In step 19 (resist stripping), the unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

As described above, the above first to fourth
According to the embodiment of the present invention, by providing the flat plate member that is located on the same plane as the surface of the wafer adjacent to the outer peripheral portion of the wafer, it is possible to increase the oxygen concentration due to the occurrence of the purge failure during the exposure on the outer peripheral portion of the wafer. Therefore, the nitrogen purge can be performed stably over the entire wafer space. As a result, the exposure efficiency of the exposure apparatus using vacuum ultraviolet light (F2 laser, etc.) can be improved, contamination of the glass material can be prevented, and an exposure apparatus with high exposure stability can be realized.

Further, as described above, the method of dividing the purge plate can be performed at a plurality of locations. (1) By sticking the purge plate on the upper surface of the bar mirror, the overhang amount of the purge plate between the bar mirror portion and the periphery of the wafer chuck can be reduced, and the deflection amount and vibration of the purge plate can be reduced. (2) By providing a purge plate integrated with each sensor part, a purge plate adapted to local purge in each sensor can be configured, and the sensor and the sensor purge can be partially replaced even when the sensor is replaced. It can be handled by removing the plate. (3) By integrating the wafer chuck and a part of the purge plate, it is not necessary to remove the purge plate when replacing the wafer chuck, and the wafer chuck can be replaced without interfering with the wafer chuck replacement robot hand. It becomes possible to do.

As described above, by forming the purge plate in the divided structure, the above merit is generated, and at the same time, the strain and the stress generated between the purge plate and the fine movement stage top plate are reduced, and the XY stage is mounted on the fine movement stage. The distortion of the bar mirror can be reduced. As a result, the purge can be stably performed without impairing the stage position measurement accuracy. At the same time, by adopting the divided structure, when the purge plate is made of a thin plate, the flatness accuracy at the time of processing the purge plate can be reasonably obtained, and the accuracy of the purge space can be improved.

Further, the purge plate has a divided structure, and a part thereof is integrated with the wafer chuck or the XY bar mirror to facilitate replacement of the wafer chuck,
The stage control accuracy can be improved by increasing the rigidity of the purge plate.

Further, by providing a purge nozzle for locally injecting a purge gas at a portion where the purge plate such as the illuminance sensor or the reference mark has a hole, stable even when the vicinity of the illuminance sensor and the reference mark is exposed. Purging can be done. Further, by performing the timing of ejecting the local purge gas immediately before exposing the wafer portion near the illuminance sensor and the reference mark, the consumption flow rate of the purge gas can be reduced.

[0065]

As described above, according to the present invention,
It is possible to prevent the purge pressure from decreasing in the vicinity of the outer periphery of the wafer during exposure and the increase in oxygen concentration due to the occurrence of defective replacement.

[Brief description of drawings]

FIG. 1 is an overall view of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a perspective view of the stage device in FIG.

FIG. 3 is an enlarged perspective view of a fine movement stage and a purge plate.

FIG. 4 is a plan view and a side view of a purge plate.

FIG. 5 is a plan view and a side view of the purging device.

FIG. 6 is a plan view of a purge plate.

FIG. 7 is a perspective view of a stage device according to a second embodiment of the present invention.

FIG. 8 is an enlarged perspective view of a fine movement stage and a purge plate according to the second embodiment.

FIG. 9 is an explanatory diagram of a chuck replacement method according to the second embodiment.

FIG. 10 is an enlarged perspective view of a fine movement stage and a purge plate according to the third embodiment.

FIG. 11 is an enlarged perspective view of a fine movement stage and a purge plate according to the third embodiment.

FIG. 12 is an enlarged perspective view of a fine movement stage and a purge plate according to the third embodiment.

FIG. 13 is a perspective view of a fine movement stage and a purge plate according to the fourth embodiment.

FIG. 14 is an enlarged perspective view of a fine movement stage and a purge plate according to the fourth embodiment.

FIG. 15 is a plan view and a side view of a purge plate according to a fourth embodiment.

FIG. 16 is an overall view of a conventional exposure apparatus.

FIG. 17 is an overall perspective view of a conventional stage device.

FIG. 18 is a plan view and a side view of a conventional purge plate.

FIG. 19 is a plan view and a side view of a conventional purging device.

FIG. 20 is a plan view of a conventional purge plate.

FIG. 21 is a flowchart of the overall manufacturing process of a semiconductor device.

22 is a detailed flowchart of the wafer process of FIG. 21. FIG.

[Explanation of symbols]

1 Lighting system unit 2 Reticle stage 3 Reduction projection lens 4 Wafer stage 5 Exposure system body 6 Wafer stage purge partition 7 Reticle stage purge partition 8 Wafer purge nozzle 9 Wafer stage purge piping 10 Reticle stage purge piping 11 Wafer purge piping 12 Purge (high-purity nitrogen) supply unit 13 Fine movement stage 14 Wafer chuck 15 wafers 16 X bar mirror 16a X bar mirror purge plate 17 Y bar mirror 17a Y bar mirror purge plate 18 Illuminance sensor 18a Illuminance sensor purge plate 18b Illuminance sensor purge nozzle 19 Stage reference mark 19a Stage reference mark purge plate 19b Stage reference mark purge nozzle 20 X linear motor 21 X guide 22 Y guide 23 Y linear motor 24 Y linear motor 25a Purge plate 25b Purge plate 26 Stage surface plate 27 slit exposure light 28 Purge plate integrated wafer chuck 29 Chuck replacement unit 30 Purge plate integrated wafer chuck 101 Lighting system unit 102 reticle stage 103 Reduction projection lens 104 wafer stage 105 Exposure system main unit 106 wafer stage purge partition 107 Reticle stage purge partition 108 Wafer Purge Nozzle 109 Wafer stage purge piping 110 Reticle stage purge piping 111 Wafer purge piping 112 Purge (high purity nitrogen) supply unit 113 Fine movement stage 114 Wafer chuck 115 wafer 116 X Bar Mirror 117 Y bar mirror 118 Illuminance sensor 119 Stage reference mark 120 X linear motor 121 X guide 122 Y guide 123 Y linear motor 124 Y linear motor 125 stage surface plate 126 slit exposure light

Claims (13)

[Claims] 1. A movable stage, a chuck device arranged on the stage for holding a substrate, and a first device for supplying gas to a position of the substrate to be exposed.
A gas supply device, and a planar member that is disposed adjacent to the outer peripheral portion of the substrate on a plane having the same or substantially the same height as the surface of the substrate and is divided into a plurality of members. Characteristic exposure equipment. 2. The exposure apparatus according to claim 1, wherein the substrate is a wafer or a reticle. 3. The at least one of the plurality of divided planar members is arranged so as to surround a sensor mounted on the stage.
The exposure apparatus according to. 4. The exposure apparatus according to claim 3, further comprising a second gas supply device for supplying gas to the vicinity of the sensor. 5. The second gas supply device supplies gas to the vicinity of the sensor in synchronism with a timing at which a position of the substrate near the sensor is exposed. The exposure apparatus described. 6. The exposure apparatus according to claim 1, wherein at least one of the plurality of divided planar members is arranged so as to surround a reference mark mounted on the stage. 7. The exposure apparatus according to claim 6, further comprising a third gas supply device for supplying a gas near the reference mark. 8. The third gas supply device supplies gas to the vicinity of the reference mark in synchronism with the timing at which a position near the reference mark on the substrate is exposed. 7. The exposure apparatus according to 7. 9. The exposure apparatus according to claim 1, wherein at least one of the plurality of divided planar members is configured integrally with the chuck device. 10. The planar member integrally formed with the chuck device is lifted above the stage integrally with the chuck device by an arm inserted below the chuck device from the outside of the stage. The exposure apparatus according to claim 9, wherein the exposure apparatus is configured as follows. 11. The exposure apparatus according to claim 1, wherein at least one of the plurality of divided planar members is configured integrally with a mirror serving as a target for measuring the position of the stage. . 12. The exposure apparatus according to claim 1, wherein the first gas supply device supplies clean dry air or an inert gas. 13. A device manufacturing method, comprising the steps of applying a photosensitive material to a substrate, and forming the photosensitive material on the substrate onto which the photosensitive material is applied.
9. A method for manufacturing a device, comprising: a step of transferring a pattern by the exposure apparatus according to any one of items 1 to 3; and a step of developing a substrate on which the pattern is transferred.