JP2004104050A - Aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve and to stabilize an exposure accuracy in an F<SB>2</SB>aligner. <P>SOLUTION: A photodetecting sensor optical path and a sensor itself are shielded by a purge partition wall. Each photodetecting sensor on a stage unit is purge replaced by supplying an inert gas into the partition wall. Or, a vitreous material having a high light transmission efficiency is provided at the sensor optical path, and hence a decrease in a light quantity of a measuring light due to an oxygen substitution fault is prevented. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exposure apparatus used in a manufacturing process of semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, and the like, and in particular, to exposure using vacuum ultraviolet light (VUV) or an electron beam as an exposure light source. Equipment related.
[0002]
[Prior art]
In a projection exposure apparatus used in a semiconductor manufacturing process, a reticle and a silicon wafer are sequentially moved with respect to a projection exposure system on a reticle stage and a wafer stage, and a reticle pattern is projected and transferred onto the silicon wafer.
[0003]
F which is vacuum ultraviolet light (VUV) as the exposure light source ₂ A conventional example using a laser (λ157 nm) is shown in FIGS. In the drawing, reference numeral 101 denotes an illumination system unit which has a function of shaping exposure light from an exposure light source and irradiating the reticle as an original exposure pattern. Reference numeral 102 denotes a reticle stage on which a reticle is mounted. Reference numeral 103 denotes a reduction projection lens for reducing and projecting an original pattern onto a wafer (substrate). The reticle stage 102 scans the wafer with a reticle at a reduction exposure magnification ratio of the reduction projection lens 103. . Reference numeral 104 denotes a wafer stage which scans the wafer in synchronization with the reticle at the time of exposure, and successively moves (step-moves) the wafer sequentially for each exposure. An exposure apparatus main body 105 supports the reticle stage 102, the projection lens 103, and the wafer stage 104.
[0004]
Reference numeral 106 denotes a wafer stage purge partition, and 107 denotes a reticle stage purge partition. These are partitions for replacing the space of the wafer stage and the reticle stage with helium or nitrogen. The partitions 106 and 107 are provided for the following purposes. That is, in the case of ordinary air, the exposure light is vacuum ultraviolet light (VUV) F ₂ The laser (λ157 nm) is absorbed by oxygen in the air to generate ozone, is absorbed by silicon in the air to produce silicon oxide, and is hydrolyzed by organic gases such as siloxane and silazane and moisture in the air. As a result, ammonia and silanol are generated, adhere to the lens glass material, and reduce the transmittance of exposure light. Therefore, by making the wafer stage purge partition wall 106 a closed space of the wafer stage space, the purging with helium or nitrogen supplied to increase the transmittance of exposure light is performed more efficiently, and oxygen and moisture inside the wafer are purged. It is provided to reduce the concentration to 100 to 1000 ppm. The reticle stage purge partition 107 is provided for the same purpose.
[0005]
Reference numeral 108 denotes a wafer purge nozzle, which locally purges an exposed portion on the upper surface of the wafer with a high-purity nitrogen gas to obtain an oxygen concentration (100 to 1000 ppm) in the wafer stage purge partition 106 and the reticle stage purge partition 107. The oxygen and water concentrations are also reduced to 10 ppm or less. A wafer stage purge pipe 109, a reticle stage purge pipe 110, and a wafer purge pipe 111 are pipes for supplying a purge gas (such as helium or nitrogen) from the purge gas supply unit 112 to the inside of the partition walls 106 and 107 and to the purge nozzle 108. is there.
[0006]
In FIG. 18, reference numeral 115 denotes a wafer having a resist coated on the surface of a single crystal silicon substrate for projecting and transferring a reticle pattern drawn on a reticle substrate through a reduction exposure system. Reference numeral 113 denotes an optical axis of the reduction exposure system. Fine movement stage for fine adjustment in the direction, tilt direction and rotation direction of the optical axis center; 114, a wafer chuck for supporting and fixing the wafer 115 on the fine movement stage 113; 116, the position of the fine movement stage 113 in the X direction measured by a laser interferometer X-bar mirror as a target for performing Reference numeral 117 denotes a Y-bar mirror, which is also a target for measuring the position in the Y-direction. Reference numeral 118 denotes an illuminance sensor provided on the upper surface of the fine movement stage 113. The illuminance of exposure light is calibrated and measured before exposure, and is used for exposure amount correction. Reference numeral 119 denotes a stage reference mark provided on the top surface of the fine movement stage 113 and provided with a target for stage alignment measurement. Reference numeral 120 denotes an X linear motor that moves and drives the fine movement stage 113 in the X direction. Reference numeral 121 denotes an X axis of the fine movement stage 113. X guide for guiding the movement in the direction, 122 is a Y guide for guiding the X guide 121 and fine movement stage 113 in the Y direction, 123 and 124 are Y linear motors for driving the fine movement stage 113 in the Y direction, and 125 is This is a stage base that guides the fine movement stage 113 on a plane.
In addition, there are Patent Documents 1 to 4 as documents describing the above-mentioned conventional technology.
[0007]
[Patent Document 1]
JP-A-2002-158154 (P2002-158154A)
[Patent Document 2]
JP-A-2001-358056 (P2001-358056A)
[Patent Document 3]
JP-A-2001-35782 (P2001-35782A)
[Patent Document 4]
JP 2001-85314A (P2001-85314A)
[0008]
[Problems to be solved by the invention]
By the way, this conventional apparatus has a problem that the exposure accuracy may be unstable. According to the findings of the present inventors, the reasons are as follows. That is, in the apparatus shown in FIG. 17, as shown in FIGS. 19A and 19B, the wafer 115 is irradiated with slit exposure light 126 passing through the reticle about the exposure optical axis, and a wafer purge nozzle is provided above the slit exposure light 126. 108 is provided, and the upper surface of the wafer 115 is replaced by a purge gas (nitrogen or the like) ejected from the gas 108, so that the oxygen concentration at the center of the wafer 115 reaches 10 ppm. However, as shown in FIGS. 20 (1) and (2), the purge gas reaches between the vicinity of the optical path of the sensor section 119B provided on the stage reference mark 119 and between the light receiving element 118A of the illuminance sensor 118 and the filter 118B. Since the structure is difficult to perform, the oxygen concentration does not decrease unlike the upper portion of the wafer 115, and remains at the level of 100 to 1000 ppm of the oxygen concentration in the stage space. As a result, the amount of measurement light was reduced due to oxygen absorption in the optical path to the light receiving element 118A and the sensor 119B, resulting in measurement failure and unstable exposure accuracy.
An object of the present invention is to realize an exposure apparatus with stable exposure accuracy by preventing a measurement failure of each light receiving sensor, which has been a problem in the above-described conventional example.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, a first exposure apparatus according to the present invention projects a pattern drawn on an original plate onto a substrate via a projection optical system, and projects both the original and the substrate or the substrate on the projection optical system. In an exposure apparatus that repeatedly exposes the pattern of the original plate to the substrate by relatively moving only the stage apparatus, the periphery of the light receiving sensor mounted on the stage apparatus and the incident optical path portion are set as a substantially shielded space. A purge partition and gas supply means for supplying gas into the purge partition are provided.
[0010]
Here, it is preferable that the gas supply means is provided integrally with a stage device member near the light receiving sensor fixing portion. Further, at an arbitrary position on the path of the gas supply means to the light receiving sensor, the gas is formed from a single member or a plurality of members of any of a porous member, a perforated plate, a nonwoven fabric, a nozzle and a valve. Preferably through the member. Further, it is preferable that the supply amount of the gas is variably controlled substantially in synchronization with the measurement using the light receiving sensor or the control of the stage device.
[0011]
A second exposure apparatus according to the present invention projects a pattern drawn on an original surface onto a substrate via a projection optical system, and moves both the original and the substrate or only the substrate to the projection optical system using a stage device. In an exposure apparatus that repeatedly exposes the pattern of the original to the substrate by moving the original, a gas is applied to the original surface or the substrate surface from a portion adjacent to the original surface or the substrate surface or a separated surface facing the original surface. A first gas supply unit for supplying gas; and a second gas supply unit for supplying gas to the light receiving sensor mounted on the stage device, and an incident optical path of the light receiving sensor mounted on the stage device. , A gas is supplied from the second gas supply means.
[0012]
Here, it is preferable to provide a gas permeable hole near the optical path of the light receiving sensor. In addition, it is preferable that the gas supply amount of the second gas supply unit is variably controlled substantially in synchronization with the measurement using the light receiving sensor or the control of the stage device.
In the first and second exposure apparatuses, an inert gas such as high-purity nitrogen or high-purity helium can be used as the gas.
[0013]
A third exposure apparatus according to the present invention projects a pattern drawn on an original plate surface onto a substrate via a projection optical system, and moves both the original plate and the substrate or only the substrate to the projection optical system using a stage device. In the exposure apparatus that repeatedly exposes the pattern of the original to the substrate by moving the substrate, a glass material that transmits the received light is provided in a part of an incident optical path of a light receiving sensor mounted on the stage device. It is characterized by the following.
[0014]
[Action]
In the present invention, the light path of the light receiving sensor and the sensor itself are shielded by the purge partition, and a gas such as an inert gas is supplied into the purge partition, thereby purging each light receiving sensor on the stage device. Alternatively, by providing a glass material having high light transmission efficiency in the light path portion of the light receiving sensor, it is possible to prevent the light quantity of the measurement light from being reduced due to the poor oxygen substitution. As a result, it is possible to prevent an increase in oxygen concentration around each light receiving sensor on the stage and in the vicinity of the light path incident on each light receiving sensor, reduce a decrease in the amount of light reaching each light receiving sensor, and prevent a measurement failure of each light receiving sensor. Thus, an exposure apparatus with stable exposure accuracy can be realized.
[0015]
【Example】
Hereinafter, examples of the present invention will be described.
[Example 1]
1 and 2 show the configuration of an exposure apparatus according to one embodiment of the present invention. In the figure, reference numeral 1 denotes an illumination system unit, which has a function of shaping and exposing an exposure light source and exposure light to a reticle. Reference numeral 2 denotes a reticle stage for mounting a reticle as an exposure pattern master, reference numeral 3 denotes a reduction projection lens for reducing and projecting an original pattern onto a wafer (substrate), and reference numeral 4 denotes a wafer stage for mounting a substrate (wafer). 4 is scanned in synchronization with the reduced exposure magnification ratio of the reduction projection lens 3, thereby causing the reticle to scan the wafer at the reduced exposure magnification ratio. The wafer stage 4 further successively moves (steps) the substrate (wafer) sequentially for each exposure. Reference numeral 5 denotes an exposure apparatus main body that supports the reticle stage 2, the projection lens 3, and the wafer stage 4.
[0016]
6 is a wafer stage purge partition for replacing the wafer stage space with helium or nitrogen, and 7 is a reticle stage space purge partition for replacing the reticle stage space with helium or nitrogen. The purpose of providing these partitions 6 and 7 is as follows. That is, in the case of ordinary air, the exposure light is vacuum ultraviolet light (VUV) F ₂ A laser (λ157 nm) is absorbed by oxygen in the air to generate ozone, is absorbed by silicon-based impurities in the air to produce silicon oxide, and is an organic compound such as siloxane and silazane volatilized from various acids and solvents. Ammonia and silanol are generated by the hydrolysis by the gas and moisture in the air, and these adhere to the lens glass material and reduce the transmittance of exposure light. In order to prevent this, the optical path of the exposure light is purged with helium or nitrogen. The partition walls 6 and 7 are used to efficiently purge the helium or nitrogen which is a purge gas supplied to increase the transmittance of the exposure light. The wafer stage space or the reticle stage space is a closed space, and is provided to reduce the oxygen and moisture concentrations in this internal space to 100 to 1000 ppm.
[0017]
Reference numeral 8 denotes a wafer purge nozzle for locally replacing an exposed portion on the upper surface of the wafer with high-purity nitrogen gas. The upper surface of the wafer is provided with an oxygen concentration (100 to 1000 ppm) in the wafer stage purge partition 6 and the reticle stage purge partition 7. It is for lowering the oxygen and moisture concentration to 10 ppm or less, which is lower than that. The wafer stage purge pipe 9, the reticle stage purge pipe 10, and the wafer purge pipe 11 are pipes for supplying a purge gas (such as helium or nitrogen) from the purge gas supply unit 12 to the inside of the respective partition walls 6, 7 and the purge nozzle 8. .
[0018]
Referring to FIG. 2, reference numeral 15 denotes a wafer having a resist coated on the surface of a single-crystal silicon substrate for projecting and transferring a reticle pattern drawn on a reticle substrate through a reduction exposure system, and 13 denotes a wafer of the reduction exposure system. This is a fine movement stage that performs fine movement adjustment in the optical axis direction, the tilt direction, and the rotation direction around the optical axis. Reference numeral 14 denotes a wafer chuck integrated with a purge plate for supporting and fixing the wafer 15 to the fine movement stage 13, and as shown in FIG. The purge plate is integrally formed of ceramic or the like.
[0019]
Reference numeral 16 denotes an X bar mirror, which is a target mirror for measuring the position of the fine movement stage 13 in the X direction by a laser interferometer (not shown). Reference numeral 17 denotes a Y-bar mirror, which is also a target mirror for measuring the position in the Y-direction. Reference numeral 18 denotes an illuminance sensor provided on the upper surface of the fine movement stage 13, which performs calibration measurement of the illuminance of exposure light before exposure, and uses the illuminance for exposure amount correction. Reference numeral 19 denotes a stage reference mark provided on the upper surface of the fine movement stage 13 and provided with a target for stage alignment measurement. Alignment between the original and the wafer stage is performed by an alignment measuring means (not shown).
[0020]
Reference numeral 20 denotes an X linear motor that drives the fine movement stage 13 in the X direction, 21 denotes an X guide that guides the movement of the fine movement stage 13 in the X axis direction, and 22 denotes the X guide 21 and the fine movement stage 13 that move in the Y direction. Y guides for guiding, 23 and 24 are Y linear motors for moving and driving the fine movement stage 13 in the Y direction, and 25 is a stage base for guiding the fine movement stage 13 in a plane.
[0021]
Similarly, an illuminance sensor purge plate is also provided on the outer peripheral portion of the illuminance sensor 18, and a purge space is formed on the outer peripheral portion in substantially the same plane as the surface of the wafer 15. Similarly, a stage reference mark purge plate is also provided on the outer peripheral portion of the stage reference mark 19, and a purge space is formed in the outer peripheral portion on the same plane as the surface of the wafer 15. The illuminance sensor purge plate and the stage reference mark purge plate are integrally formed with the purge plate of the purge plate integrated wafer chuck 14.
[0022]
In the exposure apparatus of this embodiment, as shown in FIGS. 4 (1) and (2), a slit exposure light 27 of a scan exposure type is applied to the center of the exposure optical axis, and a wafer purge nozzle 8 is provided above the exposure light. The upper surface of the wafer 15 is replaced with nitrogen by the purge gas (nitrogen or the like) blown out from the purge gas, so that the oxygen concentration reaches 10 ppm near the center of the wafer 15. Further, since the purge plate is provided on the outer peripheral portion of the wafer 15 by the purge plate-integrated wafer chuck 14, FIGS. 5 (1), (2) and 6 ( 1) As shown in (2), the purge gas leaks from the outer peripheral portion of the purge plate integrated wafer chuck 14, and the pressure in the purge space does not decrease. The replacement with nitrogen as a purge gas from the purge nozzle 8 can be performed stably. Therefore, the oxygen concentration can be maintained at 10 ppm or less in the entire slit exposure region 27.
[0023]
Next, the purging of each sensor unit of the illuminance sensor 18 and the stage reference mark 19 will be described. As shown in FIGS. 7A and 7B, the illuminance sensor 18 includes a light receiving element 18A and a filter 18B for wavelength-selecting light to the light receiving element 18A. Purity nitrogen is supplied. Here, a partition 18D is provided around the light receiving element 18A, and replacement is efficiently performed by the supplied high-purity nitrogen.
[0024]
The stage reference mark 19 focuses and aligns the mark using a reference mark glass 19A provided with an alignment mark and a sensor 19B that measures light transmitted through the mark. High-purity nitrogen is supplied to the sensor 19B by a sensor purge duct 19C. Here, a sensor purge partition 19D is provided around the sensor 19B, and the replacement is efficiently performed by the supplied high-purity nitrogen.
[0025]
[Example 2]
FIG. 8 shows a second embodiment of the present invention. In the first embodiment, the sensors 19B are provided in three places, and the sensor purge partition 19D is provided in each of the three sensors 19B. However, as shown in FIGS. By providing the sensor purge partition 19E integrally with the sensor 19B, it becomes possible to purge the sensor 19B integrally.
[0026]
[Example 3]
FIG. 9 shows a third embodiment of the present invention. In the first embodiment, as a path for supplying high-purity nitrogen to the illuminance sensor 18 and the sensor 19B of the stage reference mark 19, as shown in FIG. Each of them is connected and supplied in series, and further supplied in series to the illuminance sensor 18 from the illuminance sensor duct 18C. Further, as shown in FIG. 9 (2), a high-purity nitrogen supply source may be connected and supplied to the sensor 19B in parallel to each other, and further may be supplied in parallel to the illuminance sensor 18 from the illuminance sensor duct 18C. Further, as shown in FIG. 9 (3), a high-purity nitrogen supply source is connected in series to the sensor 19B, and is further supplied from the high-purity nitrogen supply source to the illuminance sensor 18 from the illuminance sensor duct 18C by a separate system. May be.
[0027]
[Example 4]
FIG. 10 shows a fourth embodiment of the present invention. FIG. 10B is a cross-sectional view taken along the line BB of FIG. 10A, and shows a cross section of the illuminance sensor 18 and the stage reference mark 19. In FIG. 10, porous ceramics 13B and 13C are buried at positions facing the stage reference mark 19 and the lower surface of the illuminance sensor 18 on the fine movement stage top plate 13A, and the stage top plate purge pipes 13D are provided with respective porous holes. By connecting the high-quality ceramics and supplying high-purity nitrogen, high-purity nitrogen is supplied upward from the porous ceramics 13B and 13C at a uniform flow rate in the plane as shown in FIG. Perform a purge.
[0028]
[Example 5]
FIG. 11 shows a fifth embodiment of the present invention. In the figure, a glass 18C that can obtain a high transmittance with respect to exposure light is provided between the light receiving element 18A and the filter 18B, so that replacement with high-purity nitrogen or the like is unnecessary. Similarly, by providing a glass 19F capable of obtaining a high transmittance with respect to the measurement light between the stage reference mark 19A and the sensor 19B, replacement with high-purity nitrogen or the like becomes unnecessary. That is, in the present embodiment, oxygen and moisture on the optical path are purged not with a gas such as high-purity nitrogen but with a solid such as a glass material.
[0029]
[Example 6]
FIG. 12 shows a sixth embodiment of the present invention. The supply flow rate of the purge gas by the high-purity nitrogen in the sensor section is continuously changed to a constant flow rate, as shown in FIG. 12, before the sensor measurement, the flow rate in the idle state is reduced from 10 L / min to 30 L / min. By increasing the value, the oxygen concentration is reduced to a specified value at the time of measurement, and the measurement is completed. When the measurement is completed, the supply flow rate of the purge gas is returned to the original flow rate in the idle state. As described above, controlling the supply flow rate has an effect of reducing the consumption of the purge gas.
[0030]
[Example 7]
FIG. 13 shows a seventh embodiment of the present invention. FIG. 13B is a cross-sectional view taken along the line BB of FIG. 13A, and shows a cross section of the illuminance sensor 18 and the stage reference mark 19. In FIG. 13, high-purity nitrogen is supplied to a stage reference mark 19 and an illuminance sensor 18 on fine movement stage top plate 13A from a sensor purge nozzle 8A provided separately from wafer purge nozzle 8.
[0031]
FIG. 14 shows a state of purging in each sensor unit. First, FIG. 14A shows a state of purging the illuminance sensor 18. Here, a gap through which a purge gas can pass is provided around the filter 18B, and high-purity nitrogen is injected from the sensor purge nozzle 8A so that high-purity nitrogen flows into the gap in the direction of the arrow in FIG. The replacement in the partition 18D provided around the element 18A is performed, and the oxygen concentration falls to a specified value (10 ppm or less).
[0032]
Next, FIG. 14B shows a state of the purge of the sensor 19B. Here, a reference mark glass purge hole 19G through which a purge gas can pass is provided around the mark of the reference mark glass 19A, and high-purity nitrogen is injected from the sensor purge nozzle 8A, so that the reference mark glass purge hole 19G is removed. High-purity nitrogen flows in the direction of the arrow in the drawing, and the inside of the sensor purge partition 19E provided around the sensor 19B is replaced, and the oxygen concentration falls to a specified value (10 ppm or less).
[0033]
Example 8
FIG. 15 shows an eighth embodiment of the present invention. First, FIG. 15A shows a state of purging the illuminance sensor 18. Here, a gap through which a purge gas can pass is provided around the filter 18B, and high-purity nitrogen flows from the sensor purge nozzle 8A in the direction of the arrow in the drawing by injecting high-purity nitrogen from the sensor purge nozzle 8A. At this time, by applying a vacuum differential pressure to the stage top plate vacuum pipe 13E embedded in the stage top plate at the same time, the replacement in the partition 18D provided around the light receiving element 18A is performed earlier, and the oxygen concentration is regulated. Value (10 ppm or less).
[0034]
Next, FIG. 15B shows a state of the purge of the sensor 19B. Here, a reference mark glass purge hole 19G through which a purge gas can pass is provided around the mark of the reference mark glass 19A, and high-purity nitrogen is injected from the sensor purge nozzle 8A and simultaneously embedded in the stage top plate. By applying a vacuum differential pressure through the stage top plate vacuum pipe 13E, high-purity nitrogen flows into the reference mark glass purge hole 19G in the direction indicated by an arrow in the drawing, and the replacement in the sensor purge partition 19E provided around the sensor 19B is prevented. It is performed earlier, and the oxygen concentration falls to the specified value (10 ppm or less).
[0035]
[Example 9]
FIG. 16 shows a ninth embodiment of the present invention. FIG. 16B is a cross-sectional view taken along a line BB of FIG. 16A, and shows a cross section of the stage reference mark 19. Here, a sensor purge partition 19E is provided around the sensor 19B, high-purity nitrogen is supplied into the partition through a sensor purge duct 19C, and a porous ceramic filter 19H is connected to a gas exhaust portion from the sensor purge partition 19E. With this arrangement, the internal pressure in the sensor purge partition 19E becomes slightly higher than the internal pressure in the wafer stage purge partition, enabling purging with a stable flow rate. Can be expected to prevent the entry of traffic. Instead of the porous ceramic filter 19H, any one of a nonwoven fabric filter, a perforated plate filter, a wire mesh filter, and a check valve may be used alone, or a combination of these and a plurality of porous ceramic filters may be used. May be used.
[0036]
[Modification of Embodiment]
In the above-described embodiment, an example in which the present invention is applied to a so-called scanner (scanning projection exposure apparatus) that performs exposure by step-and-scan has been described. However, the present invention is also applicable to a so-called stepper that performs exposure by step-and-repeat. Applicable. Further, as exposure light, F ₂ The present invention is applicable to an exposure apparatus using vacuum ultraviolet light (VUV) other than a laser (λ157 nm), and further to an exposure apparatus using an electron beam or X-ray. When an electron beam is used, an electron lens corresponding to a projection optical system is used. Alternatively, an exposure apparatus that performs proximity exposure similar to an X-ray exposure apparatus without using a projection optical system or an electron lens may be used.
[0037]
[Example of semiconductor production system]
Next, an example of a production system for semiconductor devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.) will be described. In this method, maintenance services such as troubleshooting and periodic maintenance of a manufacturing apparatus installed in a semiconductor manufacturing factory or provision of software are performed using a computer network outside the manufacturing factory.
[0038]
FIG. 21 shows the whole system cut out from a certain angle. In the figure, reference numeral 601 denotes a business establishment of a vendor (equipment maker) that provides an apparatus for manufacturing semiconductor devices. Examples of manufacturing equipment include semiconductor manufacturing equipment for various processes used in semiconductor manufacturing factories, for example, pre-processing equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film formation equipment, planarization). Equipment) and post-processing equipment (assembly equipment, inspection equipment, etc.). The business office 601 includes a host management system 608 for providing a maintenance database of manufacturing apparatuses, a plurality of operation terminal computers 610, and a local area network (LAN) 609 connecting these to construct an intranet. The host management system 608 includes a gateway for connecting the LAN 609 to the Internet 605, which is an external network of the business office, and a security function for restricting external access.
[0039]
On the other hand, reference numerals 602 to 604 denote manufacturing factories of semiconductor device makers as users of the manufacturing apparatus. The manufacturing factories 602 to 604 may be factories belonging to different manufacturers or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 602 to 604, a plurality of manufacturing apparatuses 606, a local area network (LAN) 611 that connects them, and forms an intranet, and a host management as a monitoring apparatus that monitors the operation status of each manufacturing apparatus 606 are provided. A system 607 is provided. The host management system 607 provided in each of the factories 602 to 604 includes a gateway for connecting the LAN 611 in each of the factories to the Internet 605 which is an external network of the factory. As a result, it is possible to access the host management system 608 on the vendor 601 side from the LAN 611 of each factory via the Internet 605, and only the users limited by the security function of the host management system 608 are permitted to access. More specifically, the factory notifies the vendor of status information indicating the operating status of each manufacturing apparatus 606 (for example, the symptom of the manufacturing apparatus in which a trouble has occurred) via the Internet 605, and also responds to the notification. Response information (for example, information instructing a coping method for a trouble, software and data for coping), and maintenance information such as the latest software and help information can be received from the vendor side. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between the factories 602 to 604 and the vendor 601 and data communication on the LAN 611 in each factory. Instead of using the Internet as an external network outside the factory, it is also possible to use a dedicated line network (such as ISDN) that cannot be accessed by a third party and has high security. Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network, and permit a plurality of factories of the user to access the database.
[0040]
FIG. 22 is a conceptual diagram illustrating the entire system of the present embodiment cut out from another angle than that of FIG. In the above example, a plurality of user factories each having a manufacturing apparatus and a management system of a vendor of the manufacturing apparatus are connected via an external network, and the production management of each factory and at least one unit are connected via the external network. The data of the manufacturing apparatus was communicated by data. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors is connected to a management system of each vendor of the plurality of manufacturing equipments via an external network outside the factory, and maintenance information of each manufacturing equipment is stored. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing factory of a manufacturing apparatus user (semiconductor device maker). A manufacturing apparatus for performing various processes is provided on a manufacturing line of the factory, for example, an exposure apparatus 202, a resist processing apparatus 203, and a film forming processing apparatus 204. Has been introduced. Although only one manufacturing factory 201 is illustrated in FIG. 22, a plurality of factories are similarly networked in practice. The devices in the factory are connected by a LAN 206 to form an intranet, and a host management system 205 manages the operation of the production line. On the other hand, each business establishment of a vendor (apparatus maker) such as an exposure apparatus maker 210, a resist processing apparatus maker 220, and a film forming apparatus maker 230 has a host management system 211, 221 for performing remote maintenance of the supplied apparatus. 231 which comprise a maintenance database and an external network gateway as described above. The host management system 205 that manages each device in the user's manufacturing plant and the management systems 211, 221, and 231 of the vendors of each device are connected by the external network 200, ie, the Internet or a dedicated network. In this system, if a trouble occurs in any of a series of manufacturing equipment in the manufacturing line, the operation of the manufacturing line is stopped, but remote maintenance is performed from the vendor of the troubled equipment via the Internet 200. As a result, quick response is possible, and downtime of the production line can be minimized.
[0041]
Each manufacturing apparatus installed in the semiconductor manufacturing factory includes a display, a network interface, and a computer that executes network access software and apparatus operation software stored in a storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 23 on a display. The operator who manages the manufacturing equipment at each factory refers to the screen and refers to the manufacturing equipment model (401), serial number (402), trouble subject (403), date of occurrence (404), urgency (405), Information such as a symptom (406), a coping method (407), and a progress (408) is input to input items on the screen. The input information is transmitted to the maintenance database via the Internet, and appropriate maintenance information as a result is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes a hyperlink function (410 to 412) as shown in the figure, so that the operator can access more detailed information of each item or use the software library provided by the vendor for the manufacturing apparatus. The latest version of software to be extracted can be extracted, and an operation guide (help information) to be referred to by a factory operator can be extracted.
[0042]
Next, a manufacturing process of a semiconductor device using the above-described production system will be described. FIG. 24 shows a flow of the whole semiconductor device manufacturing process. In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is referred to as a preprocess, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and assembling such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Process. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7). The pre-process and the post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the above-described remote maintenance system. Also, data for production management and equipment maintenance is communicated between the pre-process factory and the post-process factory via the Internet or a dedicated line network.
[0043]
FIG. 25 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the exposure apparatus described above to expose the circuit pattern of the mask onto the wafer by printing. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. Step 19 (resist stripping) removes unnecessary resist after etching. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented beforehand, and if troubles occur, quick recovery is possible. Productivity can be improved.
[0044]
【The invention's effect】
According to the present invention, each light-receiving sensor optical path and the sensor itself are shielded by a purge partition, and a gas such as an inert gas is supplied into the purge partition to purge and replace each light-receiving sensor on the stage device. By performing such a process, or by providing a glass material having a high light transmission efficiency in the optical path of the light receiving sensor, it is possible to prevent a decrease in the amount of measurement light due to poor oxygen substitution and to realize an exposure apparatus capable of performing stable measurement.
[0045]
Further, in the present invention, 2) the required flow rate of the purge gas can be reduced by supplying the required flow rate of the purge gas in accordance with the measurement of each light receiving sensor, thereby reducing the consumption flow rate of the purge gas and lowering the running cost of the exposure apparatus. In addition, the exposure apparatus can be made compact.
3) By supplying the purge gas from the position facing the wafer by using a purge nozzle dedicated to the sensor, it is possible to easily purge each light receiving sensor without providing a supply unit in the stage.
4) Since the supply of the purge gas is integrally embedded in the components inside the wafer stage, there is an effect of preventing the stage from being enlarged by the purge means.
[0046]
5) By providing a porous ceramic at the purge gas supply port, it becomes possible to stably supply homogeneous high-purity nitrogen to the sensor space, and more stable measurement becomes possible.
6) When supplying the sensor purge gas, the inside of the sensor purge partition is once drawn by vacuum suction, which has an effect that replacement with higher purity nitrogen can be performed earlier.
7) Providing a porous ceramic filter in the sensor purge gas exhaust unit prevents foreign substances from entering when the purge gas is not supplied, thereby improving the reliability of the sensor measurement unit.
[Brief description of the drawings]
FIG. 1 is an overall view of an exposure apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view of the stage device in FIG.
FIG. 3 is an enlarged perspective view of a fine movement stage and a purge plate in FIG. 2;
FIG. 4 is a plan view and a side view of a purge plate in FIG. 3;
FIG. 5 is a plan view and a side view of the purge plate in FIG. 3;
FIG. 6 is a plan view of the purge plate in FIG. 3;
FIG. 7 is an explanatory diagram of a sensor purging method in the apparatus of FIG.
FIG. 8 is an explanatory diagram of a sensor purging method according to a second embodiment of the present invention.
FIG. 9 is an explanatory diagram of a sensor purging method according to a third embodiment of the present invention.
FIG. 10 is an explanatory diagram of a sensor purging method according to a fourth embodiment of the present invention.
FIG. 11 is an explanatory diagram of a sensor purging method according to a fifth embodiment of the present invention.
FIG. 12 is an explanatory diagram of a sensor purging method according to a sixth embodiment of the present invention.
FIG. 13 is an explanatory diagram of a sensor purging method according to a seventh embodiment of the present invention.
FIG. 14 is an explanatory diagram of a sensor purging method according to a seventh embodiment of the present invention.
FIG. 15 is an explanatory diagram of a sensor purging method according to an eighth embodiment of the present invention.
FIG. 16 is an explanatory diagram of a sensor purging method according to a ninth embodiment of the present invention.
FIG. 17 is an overall view of a conventional exposure apparatus.
18 is a perspective view of the stage device shown in FIG.
19 is an enlarged perspective view of a fine movement stage and a purge plate in FIG.
20 is a plan view and a side view of the purge plate in FIG.
FIG. 21 is a conceptual diagram of a semiconductor device production system viewed from a certain angle.
FIG. 22 is a conceptual diagram of a semiconductor device production system viewed from another angle.
FIG. 23 is a specific example of a user interface.
FIG. 24 is a diagram illustrating a flow of a device manufacturing process.
FIG. 25 is a diagram illustrating a wafer process.
DESCRIPTION OF SYMBOLS 1: Illumination unit, 2: reticle stage, 3: reduction projection lens, 4: wafer stage, 5: exposure apparatus main body, 6: wafer stage purge partition, 7: reticle stage purge partition, 8: wafer Purge nozzle, 9: wafer stage purge pipe, 10: reticle stage purge pipe, 11: wafer purge pipe, 12: purge (high purity nitrogen) supply unit, 13: fine movement stage, 13A: fine movement stage top plate, 13B: porous ceramic , 13C: Porous ceramic, 13D: Stage top plate purge piping, 14: Wafer chuck integrated with purge plate, 15: Wafer, 16: X bar mirror, 17: Y bar mirror, 18: Illuminance sensor, 18A: Light receiving element, 18B: Filter , 18C: Illuminance sensor duct, 18D: Partition wall, 19: Stage reference 19A: reference mark glass, 19B: sensor, 19C: sensor purge duct, 19D: sensor purge partition, 19E: sensor purge partition, 19F: glass (fluorite, etc.), 19G: reference mark glass purge hole, 19H: porous Quality ceramic filter, 20: X linear motor, 21: X guide, 22: Y guide, 23: Y linear motor, 24: Y linear motor, 26: stage base, 27: slit exposure light, 29: chuck exchange unit.

Claims (17)

By projecting the pattern drawn on the original onto a substrate via a projection optical system, and moving both the original and the substrate or only the substrate relative to the projection optical system by a stage device, the pattern of the original is obtained. An exposure apparatus for repeatedly exposing the substrate to
An exposure apparatus, comprising: a purge partition wall substantially surrounding a light receiving sensor mounted on the stage device and an incident optical path portion; and a gas supply unit for supplying gas into the purge partition wall. 2. The exposure apparatus according to claim 1, wherein the gas supply means is provided integrally with a stage device member near a light receiving sensor fixing portion. At any position in the path of the gas supply means to the light receiving sensor, the gas is a member composed of a single member or a plurality of members of a porous member, a perforated plate, a nonwoven fabric, a nozzle, and a valve. 3. The exposure apparatus according to claim 1, wherein the light is transmitted. The exposure apparatus according to any one of claims 1 to 3, wherein the supply amount of the gas is variably controlled substantially in synchronization with measurement using the light receiving sensor or control of the stage device. . By projecting the pattern drawn on the original onto a substrate via a projection optical system, and moving both the original and the substrate or only the substrate relative to the projection optical system by a stage device, the pattern of the original is obtained. An exposure apparatus for repeatedly exposing the substrate to
A first gas supply unit for supplying a gas to the original plate surface or the substrate surface from a portion adjacent to the original plate surface or the substrate surface or a spaced apart surface facing the original plate surface or the substrate surface, and a light receiving sensor mounted on the stage device; A second gas supply unit for supplying a gas, wherein the gas is supplied from the second gas supply unit to an incident optical path of a light receiving sensor mounted on the stage device. Exposure equipment. 6. The exposure apparatus according to claim 5, wherein a gas transmission hole is provided in the vicinity of the light-receiving sensor incident optical path. The exposure apparatus according to claim 5, wherein the gas supply amount of the second gas supply unit is variably controlled substantially in synchronization with measurement using the light receiving sensor or control of the stage device. . The exposure apparatus according to any one of claims 1 to 7, wherein the gas is an inert gas. The exposure apparatus according to claim 8, wherein the inert gas is high-purity nitrogen or high-purity helium. By projecting the pattern drawn on the original onto a substrate via a projection optical system, and moving both the original and the substrate or only the substrate relative to the projection optical system by a stage device, the pattern of the original is obtained. An exposure apparatus for repeatedly exposing the substrate to
An exposure apparatus, wherein a glass material that transmits received light is provided in a part of an incident optical path of a light receiving sensor mounted on the stage device. The exposure apparatus according to any one of claims 1 to 10, further comprising a display, a network interface, and a computer for executing network software, and data communication of maintenance information of the exposure apparatus via a computer network. Exposure equipment that made it possible. The network software is connected to an external network of a factory where the exposure apparatus is installed, and provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the exposure apparatus on the display. Device according to claim 11, which allows information to be obtained from the database via a. A step of installing a manufacturing apparatus group for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and manufacturing a semiconductor device by a plurality of processes using the manufacturing apparatus group. And a method of manufacturing a semiconductor device. Connecting the group of manufacturing apparatuses via a local area network; and performing data communication of information on at least one of the group of manufacturing apparatuses between the local area network and an external network outside the semiconductor manufacturing plant. 14. The method of claim 13, comprising: A database provided by a vendor or a user of the exposure apparatus is accessed via the external network to obtain maintenance information of the manufacturing apparatus by data communication, or between the semiconductor manufacturing factory and another semiconductor manufacturing factory. The method according to claim 14, wherein production control is performed by data communication via an external network. A manufacturing apparatus group for various processes including the exposure apparatus according to any one of claims 1 to 12, a local area network connecting the manufacturing apparatus group, and an external network outside the factory from the local area network. A semiconductor manufacturing plant having a gateway that enables the data communication of information on at least one of the manufacturing apparatus groups. 13. The maintenance method for an exposure apparatus according to claim 1, which is installed in a semiconductor manufacturing factory, wherein a vendor or a user of the exposure apparatus is connected to an external network of the semiconductor manufacturing factory. Providing access to the maintenance database from within the semiconductor manufacturing plant via the external network, and storing the maintenance information stored in the maintenance database on the semiconductor manufacturing plant side via the external network. And transmitting to the exposure apparatus.

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