JP2003110060A - Interposer board and manufacturing method thereof, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an interposer board that prevents the solder in the electrode land of the interposer board that is joined to a circuit board from being broken by thermal shock, to provide a method for manufacturing the interposer board, and to provide a semiconductor device. SOLUTION: A square interposer board 32 is manufactured. In the square interposer board 32, a number of electrode lands 29 are arranged in a ring- shaped region that is demarcated on one surface by allowing the center to nearly coincide with a square semiconductor chip 1a that is fitted onto the other surface. The square interposer board 32 is joined to a circuit board 12 by solder 10 as a semiconductor device 31. Additionally, an equilateral hexagonal semiconductor chip 1c is fitted to an equilateral hexagonal interposer board 82 where a number of electrode lands 29 are arranged in the ring-shaped region for packaging on the circuit board 12. Further, a circular semiconductor chip 1d is fitted to a circular interposer board 92 where a number of the electrode lands 29 are arranged in the ring-shaped region for packaging on the circuit board 12.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an interposer substrate, a method for manufacturing the same, and a semiconductor device. More specifically, the present invention relates to an interposer substrate having a semiconductor chip mounted on one surface and a circuit board bonded on the other surface. The present invention relates to a semiconductor device configured by joining an interposer substrate on which a semiconductor chip is mounted to a circuit board, a manufacturing method thereof, and a semiconductor device.

[0002]

2. Description of the Related Art In recent years, a CSP (chip size package), which is a compact packaging of a semiconductor device, has been widely used. This CSP, like the conventional QFP (Quad Flat Package),
Compared to the one that has many lead terminals around it, it can be mounted in a smaller area, and there is also an advantage that reflow surface mounting can be performed collectively by the self-alignment effect due to the surface tension of the solder balls used. , High density mounting of semiconductor devices in mobile phones, digital video cameras, notebook computers, and other electronic devices.

FIG. 8 shows a conventional semiconductor device 11 using a CSP.
9 is a diagram schematically showing an example, FIG. 8A is a longitudinal sectional view thereof, and FIG. 8B is a sectional view taken along line [B]-[B] in FIG. 8A. It should be noted that A of FIG. 8 and B of FIG. 8 do not match in size. 8A, the electrode land 2 of the semiconductor chip 1 fixed to the interposer substrate 4 with the die paste is wire-bonded to the electrode land 5 on the front surface side of the interposer substrate 4 by the gold wire 3, and the subsequent wiring 6 , The electrode land 9 on the back surface side connected through the intermediate electrode 7 and the through hole 8 is solder 10
Is connected to the circuit board (motherboard) 12. That is, the interposer substrate 4 is the semiconductor chip 1
It is used to connect the difference between the wiring pitch of the wiring board and the wiring pitch of the circuit board 12. The semiconductor chip 1, the gold wire 3, etc. are covered with the sealing resin 13, and the underfill 1 is provided between the interposer substrate 4 and the circuit substrate 12.
4 is filled. 8B shows the semiconductor device 1
1 is a diagram showing the back surface side of the interposer substrate 4 excluding the circuit board 12 from 1, but a large number of substantially circular electrode lands 9 are arranged in a grid on the back surface. These electrode lands 9 are connected to the circuit board 12 via the solder 10 as described above. It should be noted that the semiconductor chip 1 existing on the front surface side, though not actually visible, is shown by a mesh.

[0004]

In the semiconductor device 11 using the CPS as described above, when the semiconductor chip 1 is operated by energization, the semiconductor chip 1 generates heat and thermally expands, and accordingly, the interposer substrate 4 is also heated and thermally expands. However, since the thermal expansion coefficient of the semiconductor chip 1 made of inorganic silicon and the interposer substrate 4 mainly made of synthetic resin are different by about one digit, the interposer substrate 4 warps and is connected to the circuit board 12. The solder 10 of the electrode land 9 is stressed, and the solder 10 of the electrode lands 9 at the four corners is likely to be broken, and if broken, the electrical connection is lost and the semiconductor device 11 does not function. The breakage may extend not only to the solder 10 but also to the interposer substrate 4 and the circuit substrate 12. Also regarding the solder 10,
Conventionally used lead-containing tin-lead solder (for example, Sn
60, Pb40) has a relatively small elastic modulus and has the property of relaxing the stress that it receives by itself deforming.
6.5, Ag3.0, Cu0.5) has a large elastic modulus, is hard to be deformed, and is hard to relieve stress, and the solder 10 is more likely to be broken than in the past.

As one countermeasure against this breakage, as shown in the rear view of the interposer substrate of FIG. 9, a reinforcing land 9'as a dummy is formed without electrical connection to the outer side in the diagonal direction of the electrode lands 9 at the four corners. There is something to provide. That is, the reinforcing lands 9'are the solder 10 of the electrode lands 9 at the four corners.
The stress applied to the electrode lands 9 is dispersed so that the solder 10 of the electrode land 9 is not broken. However, the largest difference in the thermal expansion length due to the difference in the thermal expansion coefficient between the semiconductor chip 1 and the interposer substrate 4 is at the four corners farthest from the center of the two, so that the semiconductor chip 1 is opposed to this. Reinforcement land 9'joined to the interposer substrate 4
Since the above-mentioned solder is subjected to a stress larger than that of the solder 10 of the original four-corner electrode lands 9, it is relatively easily broken. When the break occurs, the conventional stress is applied to the solder 10 of the original four-corner electrode lands 9. Because it becomes like, reinforcement land 9 '
It is hard to say that is a sufficient measure.

In addition, as disclosed in Japanese Unexamined Patent Publication No. 2000-243862, as shown in FIG. 10, a plurality of electrode lands 9 at the four corners are removed, and a curved area having a large area is formed at that location to establish electrical connection. It is disclosed that an unrelated dummy land 19 'is provided to improve the solder bonding strength. This measure intends to increase the area of the joint by soldering and reduce the stress applied to the unit area of the joint to prevent breakage. However, even though the area is large, a large amount of stress is always applied to the dummy lands 19 'at the four corners, so that the fracture caused by the variation of the joint area due to the solder, the microcrack existing in the solder, or the like is completely generated. It is difficult to prevent.

The present invention has been made in view of the above problems, and an interposer substrate that does not break even when a solder for mounting an interposer substrate on which a semiconductor chip is mounted on a circuit board is subjected to a thermal shock, a manufacturing method thereof, and a semiconductor device. The challenge is to provide.

[0008]

[Means for Solving the Problem]
The problem can be solved by the structure of claim 10 or claim 19, and the solution means will be described below.

The interposer substrate according to claim 1 is an interposer substrate in which a semiconductor chip is mounted on one surface and a circuit substrate is joined on the other surface, and the interposer substrate is electrically connected and fixed to the circuit board by soldering. Are arranged in a region of a regular polygon of a regular pentagon or more, a circle, or a shape similar to these, which is formed on the other surface of the interposer substrate with the center substantially aligned with the semiconductor chip. It is an interposer substrate. In such an interposer substrate, even if the electrode land is the outermost periphery, the distance from the center of the semiconductor chip to the electrode land is close to the distance from the center of the semiconductor chip to the edge of the semiconductor chip. And the stress applied to the solder of the electrode land caused by the difference in the thermal expansion coefficient of the interposer substrate is small, and the solder is not broken.

In the interposer substrate according to claim 2 which depends on claim 1, the electrode lands on the side of the circuit board are arranged excluding a portion corresponding to the mounting area of the semiconductor chip or a portion corresponding to the central portion of the mounting area. It is an interposer substrate. In such an interposer substrate, when the semiconductor chip is fixed face-up to the interposer substrate and wire-bonded, and the electrode of the semiconductor chip does not exist on the surface of the semiconductor chip facing the interposer substrate, the electrode land Arrangement is rational.

An interposer substrate according to claim 3 which depends on claim 1 is an interposer substrate in which electrode lands on the side of the circuit board are arranged in a grid pattern. By combining such an interposer substrate with similarly arranged electrode lands of the circuit substrate, the interposer substrate can be easily bonded and mounted on the circuit substrate via solder.

An interposer substrate according to a fourth aspect of the present invention, which is dependent on the first aspect, has an outer shape that is a regular polygon having a regular pentagon or more, which is slightly larger than the arrangement area of the electrode lands on the circuit board side, a circular shape, or a shape close to these. It is an interposer substrate. In such an interposer substrate, the area of play in which the electrode lands are not arranged is smaller in the portion outside the semiconductor chip, and the mounting density of the interposer substrate on the circuit board can be increased accordingly.

The interposer substrate according to claim 5 which depends on claim 4 is a substrate having two parallel sides. Such an interposer substrate can be mounted by grasping and positioning its two parallel sides, which facilitates application of the automatic mounting machine.

An interposer substrate according to claim 6 which depends on claim 5 is an interposer substrate having an outer shape of a regular hexagon or a shape close to a regular hexagon. In such an interposer substrate, it is possible to arrange the interposer substrates densely on the circuit board without leaving a gap, and the packaging density can be maximized. This can be performed by an automatic mounting machine.

The interposer substrate according to claim 7 which depends on claim 5 is an interposer substrate having an outer shape of a regular octagon or a shape close to a regular octagon. Such an interposer substrate has a small play area where the electrode lands are not arranged in the portion outside the semiconductor chip of the interposer substrate, and the mounting density of the interposer substrate on the circuit board can be increased by that much. Machine.

An interposer substrate according to claim 8 that depends on claim 1 is an interposer substrate in which a semiconductor chip is a regular polygon having a regular pentagon or more, which is slightly smaller than an arrangement region of electrode lands, a circle, or an outer shape close to these. is there. In such an interposer substrate, since the distance from the center of the semiconductor chip to the outermost peripheral electrode land and the distance from the center of the semiconductor chip to the edge of the semiconductor chip are close to each other, The stress caused by the difference in the coefficient of thermal expansion and applied to the solder on the outermost electrode land is small, and the breakage of the solder is suppressed.

An interposer substrate according to claim 9 which depends on claim 8 is an interposer substrate in which a semiconductor chip has a regular hexagonal shape or an outer shape approximate to a regular hexagonal shape. Such an interposer substrate is mounted as a semiconductor chip which has a small area loss when dicing a wafer and has a cost equivalent to that of a conventional rectangular semiconductor chip.

According to a tenth aspect of the present invention, there is provided a method of manufacturing an interposer substrate in which a semiconductor chip is mounted on one surface and a circuit board is joined to the other surface, and the interposer board is electrically connected to the circuit board by soldering. A large number of electrode lands for connecting and fixing to the interposer substrate are formed on the other surface of the interposer substrate such that the center of the semiconductor chip and the center of the semiconductor chip are substantially regular pentagons or more, regular polygons, circles, or shapes similar to these. This is a manufacturing method of arranging in a region. In such a method of manufacturing an interposer substrate, even if the electrode lands are arranged on the outermost periphery of the interposer substrate, the distance from the center of the semiconductor chip to the electrode land is the edge of the semiconductor chip from the center of the semiconductor chip. To a value close to the distance to, which reduces the stress applied to the solder of the electrode land caused by the difference in the thermal expansion coefficient of the semiconductor chip and the interposer substrate, and prevents the solder from breaking.

A method of manufacturing an interposer substrate according to claim 11 which depends on claim 10 is a method of manufacturing an electrode land except for a portion corresponding to a mounting area of a semiconductor chip or a portion corresponding to a central portion of the mounting area. is there. Such a method of manufacturing an interposer substrate, when the semiconductor chip is fixed face-up to the interposer substrate and wire-bonded, when the electrode of the semiconductor chip does not exist on the surface of the semiconductor chip facing the interposer substrate, Provides a rational arrangement of electrode lands.

A method of manufacturing an interposer substrate according to a twelfth aspect of the present invention, which depends on the tenth aspect, is a method of arranging electrode lands in a grid pattern. In such an interposer substrate manufacturing method, the obtained interposer substrate can be easily mounted on a circuit board via solder by combining it with a circuit board having electrode lands similarly arranged. .

A method of manufacturing an interposer substrate according to a thirteenth aspect, which depends on the tenth aspect, forms an outer shape into a regular polygon having a regular pentagon or more, which is slightly larger than an arrangement area of the electrode lands, a circular shape, or a shape close to these. It is a manufacturing method.
In such a method of manufacturing an interposer substrate, the play area where the electrode lands are not arranged is reduced in the portion of the interposer substrate outside the semiconductor chip, and the mounting density of the interposer substrate on the circuit board can be increased accordingly.

A method for manufacturing an interposer substrate according to a fourteenth aspect, which depends on the thirteenth aspect, is a method for manufacturing an outer shape into a shape having two parallel sides. According to such a method of manufacturing an interposer substrate, two parallel sides of the obtained interposer substrate can be grasped, positioned and mounted, which facilitates application of an automatic mounting machine.

A method for manufacturing an interposer substrate according to a fifteenth aspect, which depends on the fourteenth aspect, is a method for manufacturing an outer shape into a regular hexagon or a shape close to a regular hexagon. Such an interposer board manufacturing method allows the obtained interposer boards to be arranged closely on the circuit board without leaving a gap, which makes it possible to maximize the packing density of the interposer board on the circuit board. Can be done by

A method of manufacturing an interposer substrate according to claim 16 subordinate to claim 14 is a method of manufacturing an outer shape into a regular octagon or a shape close to a regular octagon. Such a method of manufacturing an interposer substrate can reduce the area of play in which the electrode lands are not arranged in the portion of the interposer substrate outside the semiconductor chip, and can increase the packaging density of the interposer substrate on the circuit board by that much. Is possible and this can be done by an automatic loading machine.

A method of manufacturing an interposer substrate according to a seventeenth aspect of the present invention, which is dependent on the tenth aspect, is a regular polygon having a regular pentagon or more, a circle, or an outer shape similar to these, which is slightly smaller than an arrangement region of electrode lands as a semiconductor chip. This is a manufacturing method in which objects are mounted. In such an interposer substrate manufacturing method, in the obtained interposer substrate, the distance from the center of the semiconductor chip to the edge of the semiconductor chip and the distance from the center of the semiconductor chip to the outermost electrode land are close to each other. Therefore, the stress applied to the solder on the outermost peripheral electrode land due to the difference in the thermal expansion coefficient between the semiconductor chip and the interposer substrate is small, and the breakage of the solder can be suppressed.

According to a seventeenth aspect of the present invention, the interposer substrate manufacturing method according to the eighteenth aspect is a manufacturing method in which the outer shape of the semiconductor chip is a regular hexagon or a shape close to a regular hexagon. Such an interposer substrate manufacturing method has a small area loss when a semiconductor chip is diced from a wafer and hardly increases the manufacturing cost as compared with the case where a conventional rectangular semiconductor chip is mounted.

A semiconductor device according to a nineteenth aspect is a semiconductor device in which a semiconductor chip is mounted on one surface of an interposer substrate and a circuit board is joined to the other surface, and the interposer substrate is electrically connected to the circuit board by soldering. A large number of electrode lands for fixing are placed in a regular pentagon or larger regular polygon defined on the other surface of the interposer substrate with the center substantially aligned with the semiconductor chip, a circle, or an area of a shape similar to these. It is a semiconductor device.
In such a semiconductor device, the distance from the center of the semiconductor chip to the electrode land is close to the distance from the center of the semiconductor chip to the edge of the semiconductor chip, even if the electrode land is the outermost periphery. And the stress applied to the solder of the electrode land caused by the difference in thermal expansion coefficient between the interposer substrate and the solder is not broken.

A semiconductor device according to a twentieth aspect of the present invention, which depends on the nineteenth aspect, has a semiconductor chip having a regular polygon of a regular pentagon or more, a circular shape having a size slightly smaller than the arrangement area of the electrode lands, or an outer shape approximate to these. It is a semiconductor device. In such a semiconductor device, since the distance from the center of the semiconductor chip to the outermost electrode land is close to the distance from the center of the semiconductor chip to the edge of the semiconductor chip, the semiconductor chip and the interposer substrate are separated from each other. The stress caused by the difference in the coefficient of thermal expansion and applied to the solder on the outermost electrode land is small, and the breakage of the solder is suppressed.

A semiconductor device according to a twenty-first aspect, which depends on the twentieth aspect, is a semiconductor device in which a semiconductor chip has a regular hexagon or an outer shape approximate to a regular hexagon. Such a semiconductor device has a small area loss when the semiconductor chip is taken out by dicing the wafer, and does not increase the cost as compared with the case of using the conventional rectangular semiconductor chip.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION As described above, the present invention is an interposer substrate in which a semiconductor chip is mounted on one surface and a circuit board is bonded on the other surface. The interposer substrate is electrically connected to the circuit board by soldering. A large number of electrode lands for connecting and fixing are formed on the other surface of the interposer substrate with their centers substantially aligned with the semiconductor chip, and are defined as regular pentagons or more regular polygons, circles, or a region similar to these. An interposer substrate disposed inside and a manufacturing method thereof, wherein a semiconductor chip is mounted on one surface of such an interposer substrate and the other surface is bonded to a circuit board.

The area for disposing the electrode lands on the surface of the interposer substrate on the side of the circuit board is circular so that the center of the semiconductor chip mounted on the other surface substantially coincides with that of the outermost electrode lands. Since the distance can be made constant, it is possible to avoid a situation where excessive stress is applied to a specific electrode land, but at least a regular pentagon or more, preferably a regular hexagon, a regular octagon, even if it is not circular. It is desirable to arrange in a regular polygon having more than that or a region having a shape similar to these.
The approximate shape referred to here is, for example, a regular hexagon,
Part of the outer circumference is missing or protruding, the size of both sides sandwiching one side is slightly longer than the normal size (that is, the size of the one side is slightly shorter than the normal size), all interior angles are accurate It refers to a shape that cannot be geometrically called a regular hexagon, such as a shape that is not 120 degrees. The electrode lands may be arranged over the entire area to be set,
The electrode lands may be arranged in a polygonal ring shape or a ring shape without being arranged in the portion corresponding to the mounting area of the semiconductor chip on the opposite surface or the central portion of the mounting area.

When the semiconductor chip is fixed face-up to the interposer substrate and the semiconductor chip and the interposer substrate are wire-bonded to each other, the electrode lands arranged in a ring shape have semiconductor electrodes on the surface of the semiconductor chip facing the interposer substrate. Since there is no, it will be a reasonable arrangement. Such a ring-shaped arrangement is also suitably used when the semiconductor chip is fixed facedown to the interposer substrate and is joined in a flip-chip manner by solder balls or the like. The electrode lands arranged on the entire surface of the set region are suitable for mounting the semiconductor chip face down.

Although the electrode lands may be arranged in any pattern in the area where they are arranged, the electrode lands are arranged in a grid pattern and combined with the electrode lands of the similarly arranged circuit board by soldering. Bonding is preferable because mounting of the interposer board on the circuit board is simplified. Among the grid-shaped arrangements, it is preferable to arrange the electrode lands at equal pitches in two directions at right angles because the related work is simplified, but the arrangement in two directions may be arranged at different pitches. . Further, the electrode lands may be arranged in two directions intersecting at an angle different from the right angle.

As described above, when the electrode lands of the interposer substrate to be mounted on the circuit board are arranged in a region of a regular pentagon or more regular polygon, a circle, or a shape similar to these, the outside of the interposer substrate is used. The shape will be a regular polygon that is slightly larger than the arrangement area of the electrode land, a regular pentagon or more, a circle, or a shape similar to these, but the outer shape of the arrangement area of the electrode land and the outer shape of the interposer substrate are similar shapes. Does not have to be. However, in the past, interposer substrates that were square or rectangular were
By designing a regular polygon with a regular pentagon or more, a circle, or a shape similar to these, the area of play in which the electrode lands are not arranged in the portion of the interposer substrate outside the semiconductor chip is reduced. It is possible to improve the packaging density of the interposer substrate, and as a result, it is also possible to increase the packaging density of the semiconductor chips on the circuit board.

From the above viewpoint, the most preferable shape of the interposer substrate is a circle which is the ultimate shape of a regular polygon. In addition, one of the preferable shapes is a regular hexagon or a shape close to a regular hexagon. With the regular hexagonal outer shape, the interposer boards can be closely arranged on the circuit board without a gap, and the packing density of the interposer boards on the circuit board can be increased. Another preferred shape is a regular octagon or a shape close to a regular octagon. This is because the regular octagon is a shape close to a circle obtained by linear cutting under the limitation of processing cost. Furthermore, since the regular hexagon or regular octagon has two parallel sides, it is possible to grab and position the two parallel sides, and mount it, which has the advantage of facilitating the application of the automatic mounting machine. is there.

Further, although the semiconductor chip has an outer shape smaller than that of the interposer substrate, when the interposer substrate has a regular polygon of a regular pentagon or more, a circular shape, or an outer shape close to these, the semiconductor chip to be mounted is mounted. It is preferable that the semiconductor chip has an outer shape similar to that of the interposer substrate in order to reduce an area of play in which the electrode lands are not arranged in a portion on the outer side of the interposer substrate. However, this is not an essential requirement, for example, the interposer substrate may be a regular octagon and the semiconductor chip may be a regular hexagon, and conversely the interposer substrate may be a regular hexagon and the semiconductor chip may be a regular octagon, and other combinations are also possible. Good. And from the viewpoint of minimizing the stress applied to the solder of the electrode land, as described above,
It is most preferable that all of the interposer substrate, the area of the electrode land that is slightly smaller than the interposer substrate, and the semiconductor chip that is slightly smaller than the outer shape of the area of the electrode land are circular, which is the ultimate shape of a regular polygon.

By making the interposer substrate, the electrode land arrangement region, and the semiconductor chip have the above-described shape relationships, the distance from the center of the semiconductor chip to the edge of the semiconductor chip and the center of the semiconductor chip on the interposer substrate Since the distance to the outermost electrode land is close, the rupture stress on the solder of the outermost electrode land caused by the difference in the thermal expansion coefficient between the semiconductor chip and the interposer substrate is also small, and the conventional reinforcement The fracture of the solder can be most effectively suppressed without providing the land and the dummy land. In addition, the semiconductor chip may have a regular hexagonal shape or a shape approximate to a regular hexagonal shape regardless of the outer shape of the interposer substrate. By adopting a regular hexagonal shape, the area loss when dicing the wafer to cut out the semiconductor chips becomes equivalent to cutting out the current square or rectangular semiconductor chips, and suppressing the increase in the cost of the semiconductor chips used. You can

[0038]

Next, the interposer substrate, the method for manufacturing the same, and the semiconductor device of the present invention will be specifically described by way of examples with reference to the drawings.

(Embodiment 1) FIG. 1 is a rear view of an interposer substrate, that is, a circuit board side, for a semiconductor device in which a 256-pin semiconductor chip is mounted on the front surface side of the interposer substrate and a circuit substrate is joined to the rear surface side. It is the top view seen from FIG. 1, A of FIG. 1 shows Example 1, B of FIG. 1 shows a comparative example. That is, in FIG. 1A, the semiconductor device 3 using the interposer substrate 32 having the square outer shape of the first embodiment is used.
1 is a rear view of the interposer substrate 32 for FIG.
8B), and a semiconductor chip 1a having a square outer shape on the front surface side is mounted face-up, as shown in FIG. . On the back surface side, 256 electrode lands 29 shown by small white circles are defined by making the center substantially coincide with the semiconductor chip 1a on the front surface, and the inner and outer peripheries thereof are in the shape of a regular octagon or a circular ring. The figure shows a state in which they are arranged in two vertical directions. The interposer substrate 3
2 has a side of 17 mm, the outer diameter of the circular electrode land 29 is 0.25 mm to 0.3 mm, the pitch of the electrode land 29 is 0.5 mm, and the outer shape of the semiconductor chip 1a is a square having a side of 10 mm. is there. In addition, FIG. 1B is a back view of the interposer substrate 22 for a semiconductor device 21 using an interposer substrate 22 of the same size as a comparative example.
a is mounted, and 256 electrode lands 29 are arranged in a region of a square ring shape (square shape) whose inner and outer peripheries are defined on the back surface side, and the electrode lands at four corners are further arranged. 4 on the outer side of 29 diagonally independent of electrical connection
The state where the individual reinforcing lands 29 'are arranged is shown.

For each of the 10 semiconductor devices 31 of Example 1 and the semiconductor device 21 of the comparative example, a thermal shock test (acceleration test of life) was performed (the temperature was lowered from room temperature and kept at -25 ° C. for 9 minutes, and then the temperature was raised). Warm up to room temperature for 1 minute, then heat up to 12
A test was conducted in which an operation of keeping the temperature at 5 ° C. for 9 minutes and then lowering the temperature and holding at room temperature for 1 minute was repeated as one cycle. After 200 cycles, in all semiconductor devices 21 of the comparative example, the four reinforcing lands 29 'were broken, and among them, the solder of the electrode lands 29 at the four corners was also broken. It was On the other hand, in the semiconductor device 31 of the example, no breakage was observed in the solder of the electrode land 29 even after 300 cycles. The 300 cycles of the thermal shock test are said to correspond to 8 years at room temperature.

(Second Embodiment) FIG. 2 shows an electrode land 29 of an interposer substrate 42 in a semiconductor device 41 of the second embodiment.
It is a figure which shows the back surface side by which is arrange | positioned. That is, in the interposer substrate 32 shown in FIG. 1A, the electrode lands 29 are arranged in a ring-shaped region whose inner and outer peripheries approximate a regular octagon or a circle, but the interposer substrate 32 becomes a square. In contrast, Figure 2
In the interposer substrate 42, the electrode lands 29 are arranged in the same annular region, and the interposer substrate 32 is an octagon in which the four corners of the interposer substrate 32 in FIG. In this case, the semiconductor chip 1a may be mounted on the interposer substrate 42 which is octagonal in advance, or the interposer substrate 42 may be cut out into an octagonal shape after the semiconductor chip 1a is mounted.

The electrode lands 29 are not arranged at the four corners of the interposer substrate 32 of FIG. 1A, and the four corners are idle. Although this does not itself cause the solder of the electrode land 29 to break, when the interposer substrate 32 is mounted on the circuit board 12 as shown in FIG. Lower. On the other hand, since the interposer substrate 42 of the second embodiment does not have the four corners of play, the mounting density of the interposer substrate 42 on the circuit board 12 is correspondingly increased, and as a result, the semiconductor chip 1a on the circuit board 12 is mounted. The packaging density can be increased.

(Third Embodiment) FIG. 3 shows an electrode land 29 of an interposer substrate 52 in a semiconductor device 51 of the third embodiment.
It is a figure which shows the back surface side by which is arrange | positioned. That is, in the interposer substrate 42 of FIG. 2, the electrode lands 29 are arranged in an annular region, and the interposer substrate 42 has octagons with four corners cut off. 1a is mounted, the semiconductor device 51 of the third embodiment shown in FIG.
The semiconductor chip 1b having a regular octagonal outer shape is mounted on a square interposer substrate 52 having a circular ring-shaped arrangement area of the electrode lands 29.

In the interposer substrate 42 of FIG. 2, since the outer peripheral shape of the square semiconductor chip 1a and the outer peripheral shape of the arrangement region of the electrode lands 29 are different, the outermost electrode lands in the horizontal direction from the center of the semiconductor chip 1a, for example. A slightly large difference is recognized between the distance to 29 and the distance from the center of the semiconductor chip 1a to the edge of the semiconductor chip 1a in the same horizontal direction, and this difference varies depending on the direction from the center of the semiconductor chip. Therefore, when a thermal shock is applied, the stress applied to the solder of the outermost peripheral electrode lands 29 arranged in parallel with the four sides of the semiconductor chip 1a becomes rather large. On the other hand, the interposer substrate 52 shown in FIG.
, The outer shape of the semiconductor chip 1b is the electrode land 2
Since it is close to the outer shape of the arrangement region of 9, the difference in stress applied to the solder of the outermost electrode land 29 becomes small, and the trouble that the solder breaks in the specific electrode land 29 is avoided.

(Embodiment 4) FIG. 4 shows an electrode land 29 of an interposer substrate 62 in a semiconductor device 61 of Embodiment 4.
It is a figure which shows the back surface side by which is arrange | positioned. The interposer substrate 52 of FIG. 3 is one in which the electrode lands 29 are arranged in a ring-shaped region and the regular octagonal semiconductor chip 1b is mounted, but the square interposer substrate 52 is used. Fourth Embodiment Semiconductor Device 6 shown in FIG.
In No. 1, the semiconductor chip 1b having a regular octagonal outer shape is mounted on the regular octagonal interposer substrate 62 in which the arrangement region of the electrode lands 29 is annular.

That is, the interposer substrate 52 shown in FIG.
The electrode lands 29 are not arranged at the four corners of the circuit board 12 and are in play. The presence of the four play corners means that the circuit board 12 is mounted when the interposer board 52 is mounted on the circuit board 12.
The mounting density of the interposer substrate 52 with respect to is reduced. On the other hand, since the interposer substrate 62 of the fourth embodiment shown in FIG. 4 does not have the four corners of play, the mounting density on the circuit board 12 is improved by that much, and as a result, the semiconductor chip 1b on the circuit board 12 is improved. The packaging density can be increased.

(Embodiment 5) FIG. 5 shows the electrode land 29 of the interposer substrate 72 in the semiconductor device 71 of the embodiment 5.
It is a figure which shows the back surface side by which is arrange | positioned. That is, in the interposer substrate 72 of the fifth embodiment, the regular hexagonal semiconductor chip 1c is mounted on the front surface side of the square interposer substrate 72 in which the electrode lands 29 are arranged in the annular region. In such a semiconductor device 71, the difference between the distance from the center of the semiconductor chip 1c to the outermost peripheral electrode land 29 and the distance from the center of the semiconductor chip 1c to the edge of the semiconductor chip 1c is relatively small, and therefore the thermal Even if a shock is applied, the difference in stress applied to the solder of the outermost peripheral electrode land 29 is relatively small, and the trouble such as the breakage of the solder at the specific electrode land 29 does not occur. In addition, since the regular hexagonal semiconductor chip 1c has the smallest area loss when dicing from the wafer, it has an advantage that the material cost is not increased as compared with the conventional rectangular semiconductor chip.

(Sixth Embodiment) FIG. 6 shows an electrode land 29 of an interposer substrate 82 in a semiconductor device 81 of the sixth embodiment.
It is a figure which shows the back surface side by which is arrange | positioned. In the interposer substrate 72 of FIG. 5, the electrode lands 29 are arranged in the ring-shaped region and the regular hexagonal semiconductor chip 1c is mounted, but the interposer substrate 52 is a square one. In the semiconductor device 81 of the sixth embodiment shown in FIG. 6, with respect to the regular hexagonal interposer substrate 82 in which the electrode lands 29 are arranged in the annular region,
A semiconductor chip 1c having a regular hexagonal outer shape is mounted.

That is, the interposer substrate 72 shown in FIG.
The electrode lands 29 are not disposed in the four corners of the semiconductor chip 1 and are in a play state. The presence of the four play corners means that when the interposer substrate 72 is mounted on the circuit board 12, the mounting density of the semiconductor chips 1c on the circuit board 12 is high. Lower. On the other hand, the interposer substrate 82 of the sixth embodiment shown in FIG. 6 has no play, and since it is a regular hexagon, it can be mounted in a densely arranged state on the circuit substrate 12 without any gaps. The mounting density on the board 12 is greatly improved, and as a result, the semiconductor chip 1c on the circuit board 12 is
The mounting density of can be increased.

(Embodiment 7) FIG. 7 shows an electrode land 29 of an interposer substrate 92 in a semiconductor device 91 of Embodiment 7.
It is a figure which shows the back surface side by which is arrange | positioned. That is, in the interposer substrate 92 of the seventh embodiment, the circular semiconductor chip 1d is formed on the front surface side of the circular interposer substrate 92 in which the electrode lands 29 are arranged in the more circularized annular region.
Is implemented. Such a semiconductor device 91 is
The difference between the distance from the center of the semiconductor chip 1d to the outermost peripheral electrode land 29 and the distance from the center of the semiconductor chip 1d to the edge of the semiconductor chip 1d is substantially constant, and therefore even if a thermal shock is applied, There is almost no difference in the stress applied to the solder of the electrode lands 29 on the outer circumference, and no trouble such as the breakage of the solder occurs in the specific electrode lands 29. That is, from the viewpoint of reducing the stress generated in the solder of the electrode land 29 due to thermal shock as much as possible, the circular interposer substrate 92 and the ring-shaped electrode land 29.
Of the circular semiconductor chip 1d on the circuit board 12
The semiconductor device 91 mounted on is the most preferable.

Although the interposer substrate, the manufacturing method thereof, and the semiconductor device of the present invention have been described above with reference to the embodiments, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention. Is possible.

The interposer substrate of the comparative example, that is,
In a 17 mm square interposer board with a semiconductor chip of 10 mm square and 256 pins mounted on the front side and a circuit board bonded to the back side, the electrode land of the interposer board for connecting and fixing to the circuit board via solder is square. For the purpose of improving the thermal shock resistance of the interposer substrate of the comparative example arranged in the square ring-shaped region, the outer shape of the interposer substrate, the shape of the arrangement region of the electrode land, and the semiconductor chip The case where the outer shape is a regular polygon having a regular pentagon or more, a circle, and a shape similar to these is exemplified, but as described so far,
The stress applied to the solder of the outermost electrode land on the interposer substrate when subjected to thermal shock is the distance from the center of the semiconductor chip to the edge of the semiconductor chip and the electrode land on the outermost periphery from the center of the semiconductor chip in the same direction. Since the difference with the distance to is caused by the increase in the coefficient of thermal expansion, the interposer substrate of the present invention, the manufacturing method thereof, the semiconductor device, the actual size of the semiconductor chip, the actual size of the interposer substrate, and It is applied regardless of the actual size of the arrangement area of the electrode lands on the interposer substrate.

Further, in the present embodiment, the semiconductor chip 1
The interposer substrate in which a, 1b, 1c, or 1d is mounted as a face-up and mounted on the circuit substrate has been described, but the present invention is not limited to the semiconductor chips 1a, 1b, and 1.
Including the case where the c and 1d are face down and are mounted in a flip chip manner.

In this embodiment, the interposer substrate has a circular shape which is the ultimate shape of a square, a regular hexagon, a regular octagon, and a regular polygon, but other regular polygons or their approximations. It may have a shape. Further, in this embodiment, in the interposer substrate,
As the regular polygon having two parallel sides, a regular hexagon and a regular octagon are exemplified, but it goes without saying that a regular dodecagon, a regular hexagon and the like are also included. In the present embodiment, the semiconductor chip has a circular outer shape, which is the ultimate shape of a square, a regular hexagon, a regular octagon, and a regular polygon. It may have a shape.

In the present embodiment, the interposer substrate in which the electrode lands are arranged in the ring-shaped region is illustrated, but of course, it may have a circular shape, or a regular polygon of a regular pentagon or more, for example, a regular hexagon. The shape may be a regular octagon, a shape close to these, or a square ring shape thereof. In this embodiment, the case where the electrode lands are arranged at equal pitches in two vertical directions is shown, but the two directions may be arranged at different pitches. It need not be vertical.

[0056]

The interposer substrate, the method for manufacturing the same, and the semiconductor device of the present invention are implemented in the forms described above, and have the following effects.

According to the interposer substrate of claim 1,
A large number of electrode lands for connecting to the circuit board via solder are arranged in the area of a regular pentagon or more regular polygon, a circle, or a shape similar to these, which is defined by the center of the semiconductor chip being almost aligned. Therefore, even in the outermost peripheral electrode land, the distance from the center of the semiconductor chip to the electrode land is not significantly different from the distance from the center of the semiconductor chip to the edge of the semiconductor chip, and therefore the semiconductor chip And the stress applied to the solder of the electrode land caused by the difference in the thermal expansion coefficient of the interposer substrate is small, and the solder is not broken, so that the life of the interposer substrate and the semiconductor device by it is extended.

According to the interposer substrate of claim 2,
Since the electrode lands are arranged except for the portion corresponding to the mounting area of the semiconductor chip or the portion corresponding to the central portion of the mounting area, the semiconductor chip is fixed face-up to the interposer substrate and wire-bonded. Provided is a reasonably arranged electrode land when no semiconductor electrode is present on the surface of the semiconductor chip facing the poser substrate. According to the interposer substrate of claim 3,
Since the electrode lands are arranged in a grid pattern, they can be easily mounted in combination with the electrode lands having the same arrangement on the circuit board.

According to the interposer substrate of claim 4,
Since the outer shape is a regular pentagon or more regular polygon which is slightly larger than the arrangement area of the electrode land, a circle, or a shape similar to these, the play in which the electrode land is not arranged in the portion outside the semiconductor chip of the interposer substrate The area is reduced, and the mounting density of the interposer board on the circuit board can be increased accordingly.

According to the interposer substrate of claim 5,
Since the outer shape has two parallel sides, the two parallel sides can be grasped and positioned and mounted on the circuit board, which facilitates application of the automatic mounting machine. According to the interposer substrate of claim 6, since the outer shape is a regular hexagon or a shape close to a regular hexagon, it is possible to maximize the packing density of the interposer substrate on the circuit board. obtain. According to the interposer substrate of claim 7, since the outer shape is a regular octagon or a shape close to a regular octagon, the play area where the electrode lands are not arranged is small in the portion of the interposer substrate outside the semiconductor chip, It is possible to increase the packing density of the interposer board with respect to the circuit board, and this can be performed by an automatic mounting machine.

According to the interposer substrate of claim 8,
Since the semiconductor chip is a regular pentagon or more regular polygon that is slightly smaller than the arrangement area of the electrode land, a circular shape, or an external shape similar to these, the distance from the center of the semiconductor chip to the edge of the semiconductor chip and the semiconductor chip The distance from the center to the outermost electrode land is close, and the stress applied to the solder of the outermost electrode land due to the difference in thermal expansion coefficient between the semiconductor chip and the interposer substrate is small, and the breakage of the solder is suppressed. According to the interposer substrate of claim 9, since the semiconductor chip has a regular hexagonal shape or an outer shape approximate to a regular hexagonal shape, the area loss when dicing the semiconductor chip from the wafer is the smallest, and the present rectangular semiconductor chip is used. A semiconductor chip having the same cost as that of is mounted.

According to the interposer substrate manufacturing method of the tenth aspect, a large number of electrode lands for joining to the circuit board through solder are made to be substantially centered with the semiconductor chip on one surface of the interposer substrate and the other is formed. Since it is arranged in the area of a regular pentagon or more regular polygon defined by the surface of, the circle, or a shape similar to these, even if the electrode land is arranged at the outermost periphery, The distance to the electrode land is close to the distance from the center of the semiconductor chip to the edge of the semiconductor chip, and the stress applied to the solder of the electrode land caused by the difference in thermal expansion coefficient between the semiconductor chip and the interposer substrate is reduced. The solder is prevented from being broken and the life of the semiconductor device made of the interposer substrate is prolonged.

According to the interposer substrate manufacturing method of the eleventh aspect, since the electrode lands are arranged excluding a portion corresponding to the mounting area of the semiconductor chip or a portion corresponding to the central portion of the mounting area, the semiconductor chip has the interposer substrate. On the other hand, when the electrodes of the semiconductor chip do not exist on the surface of the semiconductor chip that is fixed face-up and wire-bonded and faces the interposer substrate, a reasonable arrangement of electrode lands is provided. According to the interposer substrate manufacturing method of claim 12, since the electrode lands are arranged in a grid pattern, the interposer substrate can be easily mounted on the circuit board by combining with the electrode lands similarly arranged on the circuit board. it can.

According to the interposer substrate manufacturing method of the thirteenth aspect, the outer shape of the interposer substrate is made to be a regular pentagon or more regular polygon which is slightly larger than the arrangement area of the electrode lands, a circular shape, or a shape close to these. Since the area of the play in which the electrode lands are not arranged is smaller in the portion of the substrate outside the semiconductor chip, the mounting density of the interposer substrate on the circuit substrate can be increased accordingly.

According to the interposer substrate manufacturing method of the fourteenth aspect, since the outer shape is manufactured to have a shape having two parallel sides, the two parallel sides can be grasped and positioned for mounting, and automatic mounting is possible. Facilitate the application of the machine. Claim 1
According to the interposer substrate manufacturing method of 5, the outer shape is formed into a regular hexagon or a shape close to a regular hexagon.
The packing density of the interposer board on the circuit board can be maximized and this can be done by an automatic mounting machine. According to the method of manufacturing an interposer substrate of claim 16, since the outer shape is formed into a regular octagon or a shape close to a regular octagon, the play area where the electrode land is not arranged is outside the semiconductor chip of the interposer substrate. The size of the interposer board can be reduced, and the mounting density of the interposer board with respect to the circuit board can be increased accordingly.

According to the method of manufacturing an interposer substrate of claim 17, as a semiconductor chip, a regular polygon having a regular pentagon or more, a circular shape which is slightly smaller than the arrangement area of the electrode lands, or an external shape approximate to these is mounted. Therefore, the distance from the center of the semiconductor chip to the edge of the semiconductor chip and the distance from the center of the semiconductor chip to the outermost electrode land on the interposer substrate are close to each other. The stress caused by the difference in expansion coefficient and applied to the solder of the outermost electrode land is reduced, and the solder is not broken. According to the method of manufacturing an interposer substrate of claim 18, since the outer shape of the semiconductor chip is a regular hexagon or a shape close to a regular hexagon, the area loss when dicing the semiconductor chip from the wafer is the smallest, and The manufacturing cost is hardly increased as compared with the case of using the rectangular semiconductor chip.

According to the semiconductor device of the nineteenth aspect, a large number of electrode lands for joining the interposer substrate and the circuit substrate through the solder are formed in a regular pentagonal shape or more so as to be substantially centered with the semiconductor chip. Since it is arranged in a regular polygon, a circle, or an area having a shape similar to these, the distance from the center of the semiconductor chip to the electrode land is the distance from the center of the semiconductor chip even if it is the outermost electrode land. The distance to the edge of the semiconductor chip does not differ greatly, and therefore the stress applied to the solder of the electrode land caused by the difference in the coefficient of thermal expansion between the semiconductor chip and the interposer substrate is small, and the solder is not broken, so the semiconductor device is long. Life is extended.

According to the semiconductor device of the twentieth aspect, since the semiconductor chip has a regular polygon having a regular pentagon or more, a circular shape which is slightly smaller than the arrangement area of the electrode lands, a circular shape, or an external shape similar to these, the semiconductor chip. The distance from the center of the semiconductor chip to the edge of the semiconductor chip and the distance from the center of the semiconductor chip to the outermost electrode land become close to each other, which is caused by the difference in the thermal expansion coefficient between the semiconductor chip and the interposer substrate. The stress applied to the solder of the electrode land is small and the breakage of the solder can be suppressed. According to the semiconductor device of claim 21, since the semiconductor chip has a regular hexagonal shape or an outer shape approximate to a regular hexagonal shape, the area loss when dicing the semiconductor chip from the wafer is the smallest, and the present rectangular shape. The manufacturing cost is hardly increased as compared with the case where the semiconductor chip is mounted.

[Brief description of drawings]

FIG. 1A is a rear view of an interposer substrate in a semiconductor device of Example 1, and B is a rear view of an interposer substrate in a semiconductor device of a comparative example.

FIG. 2 is a back view of an interposer substrate in a semiconductor device of Example 2.

FIG. 3 is a back view of an interposer substrate in a semiconductor device of Example 3.

FIG. 4 is a back view of an interposer substrate in a semiconductor device of Example 4.

FIG. 5 is a back view of an interposer substrate in a semiconductor device of Example 5.

FIG. 6 is a back view of an interposer substrate in a semiconductor device of Example 6.

FIG. 7 is a back view of an interposer substrate in a semiconductor device of Example 7.

8A and 8B are diagrams schematically showing an interposer substrate formed by mounting an interposer substrate on which a semiconductor chip is mounted on a circuit board, where A is a cross-sectional view and B is [B] -in A.
It is a back view of an interposer board | substrate from the [B] line direction.

9 is a rear view similar to FIG. 8B, in which reinforcing lands are provided on the outer sides in the diagonal direction of the electrode lands at the four corners.

10 is a rear view similar to FIG. 8B, in which dummy lands having large areas are provided at four corners.

[Explanation of symbols]

1a, 1b, 1c, 1d ... Semiconductor chip, 29 ... Electrode land, 31, 41, 51, 61, 71, 81, 91
... Semiconductor devices, 32, 42, 52, 62, 72, 8
2,92 ... Interposer substrate.

Claims (21)

[Claims] 1. An interposer substrate in which a semiconductor chip is mounted on one surface and a circuit board is joined to the other surface, and a large number of electrodes for electrically connecting and fixing the interposer substrate to the circuit board by soldering. The land is arranged in a region of a regular pentagon or more regular polygon formed on the other surface of the interposer substrate with the center substantially aligned with the semiconductor chip, a circle, or a region having a shape similar to these. Characterized interposer substrate. 2. The interposer substrate according to claim 1, wherein the electrode lands are arranged except a portion corresponding to a mounting area of the semiconductor chip or a portion corresponding to a central portion of the mounting area. . 3. The interposer substrate according to claim 1, wherein the electrode lands are arranged in a grid pattern. 4. The interposer substrate according to claim 1, wherein the outer shape is a regular pentagon or more regular polygon which is slightly larger than the arrangement area of the electrode lands, a circle, or a shape similar thereto. 5. The interposer substrate according to claim 4, wherein the outer shape has two parallel sides. 6. The interposer substrate according to claim 5, wherein the outer shape is a regular hexagon or a shape approximate to a regular hexagon. 7. The interposer substrate according to claim 5, wherein the outer shape is a regular octagon or a shape close to a regular octagon. 8. The semiconductor chip is a regular pentagon or more regular polygon which is slightly smaller than the arrangement area of the electrode land, a circle,
The interposer substrate according to claim 1, wherein the interposer substrate has an outer shape similar to these. 9. The interposer substrate according to claim 8, wherein the semiconductor chip has a regular hexagonal shape or an outer shape approximate to a regular hexagonal shape. 10. A method of manufacturing an interposer substrate, wherein a semiconductor chip is mounted on one surface and a circuit board is bonded on the other surface, wherein the interposer substrate is electrically connected and fixed to the circuit board by soldering. A large number of electrode lands are arranged on the other surface of the interposer substrate in a region of a regular pentagon or more regular polygon, a circle, or a shape similar to these, which is defined by substantially matching the center with the semiconductor chip. A method of manufacturing an interposer substrate, comprising: 11. The electrode land is arranged except for a portion corresponding to a mounting area of the semiconductor chip or a portion corresponding to a central portion of the mounting area.
A method for manufacturing an interposer substrate according to. 12. The method of manufacturing an interposer substrate according to claim 10, wherein the electrode lands are arranged in a grid pattern. 13. The interposer substrate according to claim 10, wherein the outer shape is formed into a regular pentagon or more regular polygon which is slightly larger than the arrangement area of the electrode lands, a circular shape, or a shape similar to these. Production method. 14. The method of manufacturing an interposer substrate according to claim 13, wherein the outer shape is formed into a shape having two parallel sides. 15. The method of manufacturing an interposer substrate according to claim 14, wherein the outer shape is formed into a regular hexagon or a shape close to a regular hexagon. 16. The method of manufacturing an interposer substrate according to claim 14, wherein the outer shape is formed into a regular octagon or a shape close to a regular octagon. 17. A regular polygon having a regular pentagon or more, which is slightly smaller than the arrangement region of the electrode lands, as the semiconductor chip,
The method of manufacturing an interposer substrate according to claim 10, wherein a circular shape or an outer shape close to these is mounted. 18. The method for manufacturing an interposer substrate according to claim 17, wherein the outer shape of the semiconductor chip is a regular hexagon or a shape approximate to a regular hexagon. 19. A semiconductor device in which a semiconductor chip is mounted on one surface of an interposer substrate and a circuit board is joined to the other surface thereof for electrically connecting and fixing the interposer substrate to the circuit board by soldering. A large number of electrode lands are arranged in a region of a regular polygon having a regular pentagon or more, a circle, or a shape close to these, which is formed on the other surface of the interposer substrate so that its center is substantially aligned with the semiconductor chip. A semiconductor device characterized in that 20. The semiconductor chip according to claim 19, wherein the semiconductor chip has a regular polygon having a regular pentagon or more, a regular polygon having a size slightly smaller than the arrangement area of the electrode lands, a circle, or an outer shape similar to these. Semiconductor device. 21. The semiconductor device according to claim 20, wherein the semiconductor chip has a regular hexagon or an outer shape approximate to a regular hexagon.