JP2003109920A - Slurry used for cmp and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide slurry used for CMP that can suppress the possibility of the performance and quality of a semiconductor device being spoiled and can easily improve the productive efficiency, and to provide a method of manufacturing a semiconductive device. SOLUTION: Alumina particles 2 become the main polishing particles of the slurry 1 used for CMP, and photosensitive resin particles 3 has a photosensitive acryloyl group that causes a photopolymerization reaction when the group is irradiated with an ultraviolet ray hνand is improved in adhesive force by the photopolymerization reaction. These particles are mixed in the slurry 1. Aggregates 5 are formed by causing the positively charged alumina particles 2 to adhere to the surfaces of the negatively charged resin particles 3 in the solvent 4 of the slurry 1. At the time of performing CMP on a part to be polished of a semiconductor substrate, the aggregates 5 are made to powerfully adhere to the polishing surface of a polishing pad by increasing the adhesive force of the resin particles 3 by projecting the ultraviolet ray hν toward the slurry 1. The alumina particles 2 polish the part to be polished in a polishing environment close to that of the bonded abrasive machining method in a state where the particles 3 are substantially fixed to the polishing surface of the polishing pad through the resin particles 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a slurry used in a chemical mechanical polishing (CMP) method and a method for manufacturing a semiconductor device, and more particularly, to embedded wiring (DRAM, FeRAM, high-speed logic LSI, etc.). Slurry for CMP used when forming damascene wiring,
And a method for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Recently, in the field of semiconductor LSI manufacturing,
In the so-called back-end process step, in order to simplify the step, improve the yield, or improve the reliability of the semiconductor device, for example, embedded wiring (damascene wiring) mounted in DRAM, FeRAM, high-speed logic LSI, etc. can be efficiently used. Process technology for forming well and with high accuracy has been researched and developed. Among them, chemical mechanical polishing (CMP)
g) Technology is an important technology indispensable for efficiently forming high-quality damascene wiring.

For example, a so-called metal CM, which is a CMP technique applied when forming a damascene wiring and polishing a metal portion (metal portion) such as a metal film on a semiconductor substrate.
In P technology, it is required to satisfy the process performance of high polishing rate, high flatness, and low defect density.
That is, the metal CMP technique is required to have high throughput and scratch-free damascene wiring formation process performance with metal loss and oxide loss suppressed as much as possible.

As means (approach) for realizing such a high-performance metal CMP technique, the polishing cloth (polishing pad) is improved and the polishing liquid (slurry for CMP) used in the CMP method is improved in performance. Is mandatory. In particular, the polishing performance of the CMP slurry is an extremely important factor that directly relates to the CMP characteristics.

There are two major problems in the development of CMP slurries having high polishing performance. One is the enhancement of the interaction between the polishing cloth and the polishing particles contained in the CMP slurry, and the other is the interaction between the polishing particles and the metal film of the semiconductor substrate polished by the polishing particles. It is the reinforcement of. That is, how strongly the polishing particles are held by the polishing cloth and how efficiently the polishing particles held by the polishing cloth can act on the metal part is the key to improving the polishing performance of the CMP slurry. is there.

Alumina can be given as a typical abrasive particle which is commonly used at present. However,
Alumina alone gives a very slow polishing rate.
This is because the individual size (size) of the alumina particles is much smaller than the roughness (roughness) of the unevenness on the surface of the polishing cloth, and as shown in FIG.
Is buried in the concave portion 103 on the surface of the polishing cloth 102, and does not effectively act on the metal film (metal film) 105 of the semiconductor substrate 104 which becomes the wiring metal.

As a method for improving the polishing efficiency of alumina particles, for example, in the invention disclosed in Japanese Patent Laid-Open No. 2000-269169, the polishing efficiency is improved by adding resin particles that adsorb inorganic particles to a slurry solution. A method of manufacturing a semiconductor device and a method of forming a buried wiring have been proposed.

Briefly explaining the present invention, alumina particles and resin particles having a particle diameter larger than that of the alumina particles are mixed (mixed) in a slurry solution. Alumina particles are approximately positively charged in the slurry solution. On the other hand, the resin particles are negatively charged in the slurry solution. In this way, by mixing the alumina particles and the resin particles having different electric charges in the slurry solution, the Coulomb force generated between the both particles causes the alumina particles to be adsorbed (adhered) around the resin particles. ) And form aggregates.

When the CMP slurry containing abrasive particles composed of such agglomerates is used, the polishing rate is improved. This is because, as shown in FIG. 6B, a plurality of alumina particles 101 as abrasive particles adhere to the periphery of the resin particles 106 to substantially increase the effective (effective) particle diameter of the abrasive particles (size up). Effect), and resin particles 10
This is based on the two effects that the state of contact between the alumina particles 101 and the metal film (metal portion) 105 is improved by elastically deforming 6. In this case, since the resin particles 106 themselves are soft and inert, the resin particles 1
06 alone has almost no polishing power and functions as assist particles for increasing the polishing efficiency of the alumina particles 101.

Thus, the resin particles 1 are added to the slurry solution.
By adding 06, alumina particles (abrasive particles) 10
It is possible to enhance the interaction between 1 and the metal portion 105 on the semiconductor substrate 104.

[0011]

[Patent Document 1] Japanese Unexamined Patent Publication No. 200
The CMP slurry used in the invention of 0-269169 has the following problems.

First, the resin particles 106 and the resin particles 106
Has a weak adhesive force to the polishing cloth 102. That is, the polishing cloth 102, the polishing particles 101, and the resin particles 1
The issue of enhanced interaction with 06 has not been improved. This allows, for example, the polishing cloth 102 during CMP polishing.
The stress generated between the semiconductor substrate 104 and the semiconductor substrate 104 increases the amount of the abrasive particles 101 and the resin particles 106, so-called loose abrasive particles 101 and 106, which are separated from the surface of the polishing cloth 102 and move freely. These loose abrasive grains 10
As shown in FIG. 7A, the Nos. 1 and 106 stay in the wiring groove 107 during CMP polishing, and promote excessive polishing of the wiring metal 105 and the like. As a result, it becomes difficult to suppress erosion such as dishing of the wiring metal 105 and thinning of the insulating film 108, and scratches 109 are likely to occur on the wiring metal 105.

Erosion and scratches 109 are major factors that deteriorate the performance and quality of a semiconductor device (not shown). Once erosion occurs,
As shown in FIG. 7B, since the resin particles 106 in the state where the alumina particles 101 are adsorbed also start to stay in the wiring groove 107, the progress and generation of erosion are further accelerated.

Secondly, since the resin particles 106 have low elasticity (viscosity) as they are, the load from the carrier (not shown) holding the semiconductor substrate 104 or the polishing cloth 1
02 is attached to a so-called CMP stress such as the rotational speed of a turntable (not shown) and is fragile and easily deteriorates in shape. As a result, for example, when a high load is applied, as shown in FIGS.
06 physically (mechanically) disintegrates, and alumina particles 101
As a result, the polishing assistance cannot be sufficiently performed, and a practically high polishing rate cannot be obtained. In addition, the resin particles 106
The original cushioning effect due to elasticity cannot be obtained, and erosion and scratches 109 are likely to occur. Therefore, similar to the above-mentioned first problem, it is a major factor of reducing the production efficiency of the semiconductor device and a major factor of degrading the performance and quality of the semiconductor device.

Third, the resin particles 10 after the CMP polishing is completed.
As shown in FIG. 9, 6 easily remains on the wiring (wiring metal) 105. The residual resin 106a contains shavings of the metal portion (wiring metal) 105 and has conductivity. Therefore, the residual resin 106a is
There is a risk of causing a short yield of 5 times. This is a major factor that deteriorates the performance and quality of the semiconductor device, as in the first and second problems described above.

The present invention has been made in order to solve the problems described above, and an object thereof is to suppress the possibility of impairing the performance and quality of a semiconductor device and to improve the production efficiency of the semiconductor device. C that can easily improve
An object is to provide a slurry for MP and a method for manufacturing a semiconductor device.

[0017]

In order to solve the above-mentioned problems, the CMP slurry according to the present invention comprises abrasive particles and a photosensitive resin which undergoes at least one of a photopolymerization reaction and a photocrosslinking reaction upon irradiation with light. It is characterized by containing particles.

This CMP slurry contains photosensitive resin particles that undergo at least one of a photopolymerization reaction and a photocrosslinking reaction when irradiated with light. Therefore, by irradiating the CMP slurry with light, the properties of the photosensitive resin particles, and by extension, the polishing characteristics of the CMP slurry, can be appropriately set.

In order to solve the above-mentioned problems, the method for manufacturing a semiconductor device according to the present invention uses a CMP slurry according to the present invention to perform a chemical mechanical polishing process on a portion to be polished of a substrate to be polished. It is characterized by including a step of irradiating the slurry for CMP on the portion to be polished with light at the time of applying.

In this method of manufacturing a semiconductor device, the CMP slurry according to the present invention is used, and the CMP slurry on the portion to be polished is subjected to chemical mechanical polishing treatment on the portion to be polished of the substrate to be polished. Irradiate light toward. Thus, the chemical mechanical polishing can be performed by appropriately setting the polishing characteristics of the CMP slurry to an appropriate state according to the state of the portion to be polished.

In order to solve the above-mentioned problems, the method for manufacturing a semiconductor device according to the present invention provides a slurry for CMP containing abrasive particles and photosensitive resin particles which undergo a photolytic reaction upon irradiation with light. Using a step of subjecting the portion to be polished of the substrate to be chemically and mechanically polished, and to the CMP slurry adhering to the substrate to be polished after being subjected to the chemical mechanical polishing process. While irradiating light
And a step of cleaning the substrate to be polished.

In this method of manufacturing a semiconductor device, CMP containing photosensitive resin particles that undergo photodecomposition reaction by irradiation of light when chemical-mechanical polishing treatment is applied to a portion to be polished of a substrate to be polished. Use a slurry for use. At the same time, when the substrate to be polished after the chemical mechanical polishing treatment is washed, the CMP slurry attached to the substrate to be polished is irradiated with light. This makes it possible to set the polishing characteristics of the CMP slurry to an appropriate state and perform chemical mechanical polishing according to the state of polishing of the portion to be polished. It becomes easy to remove the used CMP slurry.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method for manufacturing a CMP slurry and a semiconductor device according to first to third embodiments of the present invention will be described for each embodiment with reference to FIGS.

(First Embodiment) First, a slurry for CMP and a method for manufacturing a semiconductor device according to a first embodiment of the present invention will be described with reference to FIGS. 1, 2 and 5 (a). explain.

First, the CMP slurry 1 of this embodiment will be described with reference to FIGS. 1 (a) to 1 (c) and FIG.

The CMP slurry 1 of the first embodiment
Is based on the premise that it contains abrasive particles 2 and photosensitive resin particles 3 that undergo at least one of a photopolymerization reaction and a photocrosslinking reaction upon irradiation with light.

In this embodiment, alumina particles 2 which is a kind of inorganic particles are used as the abrasive particles. In addition, as the photosensitive resin particles, photocurable photosensitive resin particles 3 having an acryloyl group (not shown) which is a photosensitive group that causes a photopolymerization reaction in which the adhesive force is increased by irradiation with light having a predetermined wavelength are used. The acryloyl group causes a photopolymerization reaction to increase its adhesive force by irradiation with ultraviolet light or the like. The photosensitive resin particles 3 have almost no polishing ability by themselves, and mainly act as assist particles for improving the polishing efficiency of the alumina particles 2.

A plurality of alumina particles 2 and photocurable photosensitive resin particles 3 are contained in the solvent 4 of the CMP slurry 1 made of, for example, pure water. In addition, the plurality of alumina particles 2 and the photosensitive resin particles 3
As shown in FIG. 1 (a), in the solvent 4 of the CMP slurry 1, a plurality of alumina particles 2 are attached to the surface of the photosensitive resin particles 3 to be present in a state where aggregates 5 are formed. is doing. The aggregate 5 composed of the alumina particles 2 and the photosensitive resin particles 3 is formed for the following reason.

In this embodiment, the CMP slurry 1 is used.
The solvent 4 is pure water. The pure water 4 has a pH of about 7 and is neutral. In such a neutral environment,
The surface of the alumina particles 2 is in a substantially positively charged state as shown in FIG. On the other hand, the photosensitive resin particles 3
Is introduced into the neutral solvent 4 by introducing a functional group (not shown) such as (—COOH).
As shown in (b), the surface can be negatively charged. Therefore, when both particles of the alumina particles 2 and the photosensitive resin particles 3 into which a functional group is introduced are mixed in the solvent 4 of the CMP slurry 1 made of pure water, the alumina particles 2 are surrounded by the photosensitive resin particles 3. A plurality of them are adsorbed. That is, the plurality of alumina particles 2 and the photosensitive resin particles 3 are present in the solvent 4 of the CMP slurry 1 with a plurality of aggregates 5 formed, as shown in FIG. Becomes Each agglomerate 5 acts substantially as one abrasive particle.

Further, in the photosensitive resin particles 3 of the present embodiment, as shown in FIG. 1 (c), particles having a primary particle diameter A representing the size of each particle in the range of about 5 to 1000 nm. Is preferably used. Similarly, as the alumina particles 2 of the present embodiment, as shown in FIG. 1C, particles having a primary particle diameter B representing the size of each particle in the range of about 5 to 1000 nm are preferably used. . These numerical settings are
The reason is as follows.

Photosensitive resin particles 3 and alumina particles 2
Is about 5n in terms of the size A and B of their primary particle size.
When the particle size is less than m, the Brownian motion of each particle 2 and 3 becomes intense. Then, CMP slurry 1
The probability that the photosensitive resin particles 3 and the particles 2 and 3 of the alumina particles 2 included in a plurality (a large number) in each other collide with each other is high, and the particles easily adsorb to each other. As a result, the photosensitive resin particles 3 and the alumina particles 2 are less likely to exist in the CMP slurry 1 in a state where the individual particles 2 and 3 are dispersed (independent), and are easily aggregated with each other. Since the aggregated photosensitive resin particles 3 and alumina particles 2 have a high sedimentation speed, it is difficult to control (maintain) the dispersibility of the particles 2 and 3. As a result, CMP containing the photosensitive resin particles 3 and the alumina particles 2 in such an aggregated state.
It becomes difficult to control the polishing characteristics of the polishing slurry 1.

The photosensitive resin particles 3 and the alumina particles 2 each have a particle size A, B having a primary particle size of more than about 1000 nm.
The intermolecular attractive force acting between 3 becomes large. Then, the particles 2 and 3 of the photosensitive resin particles 3 and the alumina particles 2 included in the CMP slurry 1 in a plurality (a large number) easily aggregate with each other. As a result, as described above, the aggregated photosensitive resin particles 3 and alumina are similar to the case where the primary particle diameters A and B of the photosensitive resin particles 3 and the alumina particles 2 are smaller than about 5 nm. Particle 2 has a higher sedimentation velocity, and each of these particles 2, 3
It becomes difficult to control the dispersibility of Consequently, it becomes difficult to control the polishing characteristics of the CMP slurry 1 containing the photosensitive resin particles 3 and the alumina particles 2 in such an aggregated state.

In particular, when the primary particle diameters A and B of the photosensitive resin particles 3 and the alumina particles 2 are larger than about 1000 nm, the individual particle sizes are large, so that the dispersibility of each particle is large. Is significantly reduced. Consequently, it becomes extremely difficult to control the polishing characteristics of the CMP slurry 1.

As described above, when the photosensitive resin particles 3 and the alumina particles 2 whose primary particle sizes A and B are out of the range of about 5 to 1000 nm, respectively, the CMP slurry 1 is used. It becomes difficult to control the polishing characteristics of. As a result, it may cause deterioration of the polishing characteristics of the CMP slurry 1. In order to prevent such a risk, in the CMP slurry 1 of the present embodiment, the primary particle diameters A and B are about 5 to 5 respectively.
The photosensitive resin particles 3 and the alumina particles 2 having a particle size in the range of 1000 nm are used.

Further, in this embodiment, the concentration of the alumina particles 2 contained in the CMP slurry 1 is preferably about 0.5 wt% to 3.0 wt% in terms of weight percent concentration. At the same time, the concentration of the photosensitive resin particles 3 contained in the CMP slurry 1 is preferably about 0.1 to 2.0 wt% in terms of weight percent concentration. The setting of these numerical values is based on the following reasons.

The concentration of the alumina particles 2 and the concentration of the photosensitive resin particles 3 are about 3.0 wt% and about 2.0 wt, respectively.
%, The particles contained in the CMP slurry 2,
The number of particles 3 becomes too large, and the distance between the particles 2 and 3 becomes too short. As a result, the intermolecular attractive force acting between the particles 2 and 3 increases. Then, as described above, as in the case where the sizes A and B of the primary particle diameters of the photosensitive resin particles 3 and the alumina particles 2 are larger than about 1000 nm, the particles 2, 3
The particles tend to aggregate with each other, making it difficult to control the dispersibility of the particles 2 and 3. When the dispersibility of the particles 2 and 3 is lowered, the particles 2 and 3 are adsorbed to each other, and excessively large aggregates (coarse particles) not shown are formed in the CMP slurry. Chemical mechanical polishing (CMP: ChemicalMech) using a slurry for CMP containing such coarse particles.
Anical Polishing) may cause the following problems.

Here, the semiconductor substrate 6 as the substrate to be polished, which is subjected to the CMP process in the semiconductor device manufacturing method described later, will be briefly described with reference to FIG.

As shown in FIG. 2, the semiconductor substrate 6 is made of, for example, silicon dioxide (SiO ₂ ) in which a groove 11 for embedded wiring is provided on the main surface of a base substrate (Si substrate) 10 made of silicon (Si). It is assumed that the insulating film (SiO ₂ film) 8 is formed. Further, it is assumed that a metal film 9 for wiring, which is a film containing a predetermined metal as a main component, for forming the buried wiring (damascene wiring) 9a is formed on the surface of the SiO ₂ film 8. However, in FIG. 2, only the portion (embedded wiring 9a) of the wiring metal film 9 remaining in the embedded wiring groove 11 after the CMP process is illustrated. In the present embodiment, the wiring metal film 9 is a metal film mainly composed of copper (Cu).
It will be referred to as the film 9. At the same time, the embedded wiring 9a is referred to as a Cu wiring 9a.

In the following description, the SiO ₂ of the semiconductor substrate 6
The side on which the film 8 and the Cu film 9 for wiring are formed is the front surface side of the semiconductor substrate 6. In the present embodiment, the polished portion 7 of the semiconductor substrate (substrate to be polished) 6 is the SiO ₂ film 8
And the Cu film 9 for wiring, and mainly the Cu film 9 for wiring.
Shall be subjected to CMP processing. That is, the surface of the semiconductor substrate 6 becomes the surface to be polished.

The polished portion 7 of the semiconductor substrate 6 described above
Then, as described above, chemical mechanical polishing is performed using the CMP slurry containing a plurality of coarse particles. Then, due to the coarse particles, the SiO ₂ film 8 is excessively polished,
So-called thinning, which is thinner than a predetermined thickness, is likely to occur. Further, not only the wiring Cu film on the surface of the SiO ₂ film 8 but also the wiring Cu film 9 remaining in the embedded wiring groove 11, that is, the Cu wiring 9a is excessively polished and shaped like a hollow It is easy to cause so-called dishing. Furthermore, erosion (erosio) that consists of such dishing and thinning.
In addition to n), the Cu wiring 9a may be scratched, so-called scratches may frequently occur.

Alternatively, the concentration of the alumina particles 2 and the concentration of the photosensitive resin particles 3 exceed about 3.0 wt% and about 2.0 wt%, respectively, and the number of each of the particles 2 and 3 contained in the CMP slurry 1 is increased. If the number is too large, the polishing rate (polishing rate) of the relatively soft SiO ₂ film 8 in the portion to be polished 7 becomes excessively high, and the area outside the embedded wiring groove 11 of the relatively hard Cu film 9 for wiring is increased. It may be difficult to selectively polish and remove a portion, that is, an unnecessary portion of the Cu film 9 for wiring that does not remain as the Cu wiring 9a.

On the other hand, the concentration of the alumina particles 2 and the concentration of the photosensitive resin particles 3 are about 0.5 wt% and about 0.
If it is less than 1 wt%, the number of the particles 2 and 3 contained in the CMP slurry 1 will be too small, and the portion 7 to be polished may not be able to be subjected to the CMP treatment at a polishing speed necessary and practical for practical use. is there.

As described above, the CMP slurry 1
The weight percent concentrations of the alumina particles 2 and the photosensitive resin particles 3 contained in are about 0.5 wt-3.0 w, respectively.
If it deviates from the range of t% and about 0.1 to 2.0 wt%, the CMP slurry 1 may not be used to efficiently polish the portion to be polished 7 of the semiconductor substrate 6 in a proper state. That is, it becomes difficult to control the polishing characteristics of the CMP slurry 1, and the polishing characteristics of the CMP slurry 1 may deteriorate. As a result, the performance and quality of the semiconductor substrate 6 that is subjected to the CMP process using the CMP slurry 1 and eventually the semiconductor device (not shown) that uses the semiconductor substrate 6 may be impaired, and the yield of the semiconductor device may decrease. Therefore, the production efficiency of the semiconductor device may decrease.

Further, the CMP slurry 1 of the present embodiment is added with a predetermined oxidizing agent 12 in order to improve the polishing rate and obtain a sufficiently high polishing rate in practice.
This is because, by adding the oxidizing agent 12 to the CMP slurry 1, for example, a brittle oxide film (not shown) is formed on the surface of the wiring Cu film 9, and the metal polishing ability (metal removing ability) by the alumina particles 2 is further improved. By doing. Desirably, in the CMP slurry 1 of the present embodiment, the standard electrode potential (hydrogen electrode potential) is −3.
Hydrogen peroxide 12 in the range of 0 to +3.0 V is used. In addition, 1 hydrogen peroxide in the CMP slurry 1
The content of 2 is about 0.1 to 5.0 in weight percent concentration.
It is set within the range of%.

As described above, by adding hydrogen peroxide 12 whose standard electrode potential and content are set within the above ranges to the CMP slurry 1, a chemical assist for increasing the oxidizing power of the CMP slurry 1 is obtained. The effect, and consequently the polishing characteristics of the CMP slurry 1 can be easily improved. At the same time, the agglomerated state of the alumina particles 2 and the photosensitive resin particles 3, the agglomerated state of each agglomerate 5, and further for CMP so that the portion 7 to be polished of the semiconductor substrate 6 is subjected to CMP treatment in an appropriate state. The polishing characteristics of the slurry 1 can be easily controlled to a proper state. In addition, the standard electrode potential and the content rate of the hydrogen peroxide 12 are properly set to appropriate values according to the forming material of the polished portion 7 to be subjected to the CMP treatment, for example, the kind of metal, as long as they are within the ranges described above. You can set it.

As described above, according to the CMP slurry 1 of the present embodiment containing the alumina particles 2 and the photosensitive resin particles 3, etc., the aggregates 5 are formed by the alumina particles 2 and the photosensitive resin particles 3. As a result, the substantial polishing ability (polishing characteristics) of the alumina particles 2, which are the polishing particles, is dramatically improved. That is, in the CMP slurry 1 of the present embodiment, the polishing rate (polishing rate) is significantly improved as compared with the case where the polishing particles contained therein consist of the individual alumina particles 2. Further, in the CMP slurry 1 of the present embodiment, the adhesive force of the photosensitive resin particles 3 having an acryloyl group can be easily controlled by irradiation or non-irradiation of ultraviolet light, so that the polishing characteristics can be easily controlled.

Therefore, by using the CMP slurry 1, the polishing target portion 7 of the semiconductor substrate 6 is set in a proper state while the polishing characteristics of the CMP slurry 1 are set finely according to the polishing target state. Can be used for efficient polishing. As a result, the semiconductor substrate 6 that is subjected to the CMP process using the CMP slurry 1 of the present embodiment,
As a result, it is possible to almost eliminate the possibility of impairing the performance and quality of a semiconductor device (not shown) that uses the semiconductor substrate 6, and it is possible to easily suppress a decrease in the yield of the semiconductor device, that is, a decrease in the production efficiency of the semiconductor device. .

Next, the method of manufacturing the semiconductor device of this embodiment will be described with reference to FIGS. 2 and 5A.

In the method of manufacturing a semiconductor device according to the first embodiment, the CMP slurry 1 according to the first embodiment of the present invention described above is used to perform a chemical mechanical polishing process on a portion 7 to be polished of a semiconductor substrate 6. It is premised that a step of irradiating the CMP slurry 1 on the portion to be polished 7 with light having a predetermined wavelength is performed when performing the process. The CMP slurry 1 on the polished portion 7 is, more accurately, the CMP slurry 1 that is in contact with the polished portion 7.

In this embodiment, the light having a predetermined wavelength, which is irradiated toward the CMP slurry 1, is ultraviolet light. The portion to be polished by using the CMP slurry 1 is mainly the metal portion of the portion to be polished 7 formed of the SiO ₂ film 8 and the wiring Cu film 9 for wiring.
The Cu film 9 is used.

The semiconductor device manufacturing method of the present embodiment briefly described above is, specifically, a chemical mechanical polishing method (CM).
P method). Hereinafter, the steps of the CMP method according to the first embodiment will be described in detail with an example.

First, as shown in FIG. 5A, the semiconductor substrate 6 to be polished (CMP process) is applied to the carrier (substrate holding part) 14 installed in the polishing section 13a of the CMP apparatus 13. The part to be polished 7 is held in a state of being turned to the turntable (rotary platen) 15 side. On the surface of the turntable 15 facing the carrier 14,
A polishing cloth (polishing pad) 16 is attached in advance so as to rotate integrally with the turntable 15. Polishing surface 16 that is the surface of polishing pad 16 that faces carrier 14.
Above the a, the CMP slurry 1 described above is used as the polishing surface 1.
A slurry supply device 17 set to supply an appropriate amount is installed on 6a as appropriate. Prior to the start of the CMP treatment, a predetermined amount of C on the polishing surface 16a is previously set.
The MP slurry 1 is supplied via the supply nozzle 17 a of the slurry supply device 17.

Further, in the polishing section 13a of the CMP apparatus 13, as shown in FIG. 5A, the CMP slurry 1 supplied on the polishing surface 16a is provided in the upper portion of the polishing section housing 18. An ultraviolet lamp 19 is installed as an ultraviolet light irradiation device that can irradiate the ultraviolet light hν toward the. As the ultraviolet lamp 19, specifically, a black light, a mercury lamp or the like is used.

The CMP process is started in the state described above. First, the turntable 15 is rotationally driven by the table drive device 20 in the direction indicated by the broken line arrow in FIG. Then, C supplied on the polishing surface 16a
The MP slurry 1 spreads substantially uniformly over the polishing surface 16a. After the CMP slurry 1 spreads substantially uniformly over the entire polishing surface 16a, the semiconductor substrate 6 and the carrier 14 holding the semiconductor substrate 6 are moved by the carrier driving device 21 as indicated by the white arrow in FIG. As shown, the polishing pad 16 is biased toward the polishing surface 16a side. At this time, the semiconductor substrate 6 is rotationally driven by the carrier driving device 21 via the carrier 14 in the direction indicated by the one-dot chain line arrow in FIG. Further, the semiconductor substrate 6 is subjected to a predetermined load while the surface 7 (surface to be polished) of the portion 7 to be polished is subjected to the CMP treatment on the surface 7 to be polished of the polishing pad 16. A load of a predetermined size is applied by the carrier driving device 21 via the carrier 14 so as to be pressed. As a result, as shown in FIG. 2, the CM for the wiring Cu film 9 which is the main polishing portion of the polished portion 7 of the semiconductor substrate 6 is obtained.
The P process (metal CMP, metal CMP) is started.

However, in the state described above,
CM using the above-mentioned conventional CMP slurry
Similar to the method P, the interaction between the polishing pad 16 and the aggregate 5 is not enhanced. That is, the alumina particles 2
Also, the adhesive force between the aggregate 5 which is substantially abrasive particles composed of the photosensitive resin particles 3 and the polishing surface 16a which is the surface of the polishing pad 16 is weak (small). Therefore, it is difficult to efficiently cause the aggregate 5 (alumina particles 2) to act on the wiring Cu film 9 of the portion to be polished 7 and polish it in an appropriate state. As described above, even if the CMP slurry 1 according to the first embodiment of the present invention is used, as long as the general CMP method as described in the related art is performed, the polishing rate is improved and erosion and scratches are prevented. It is difficult to achieve both suppression (reduction).

Therefore, the CM according to the first embodiment of the present invention
In the P method, while the portion 7 to be polished of the semiconductor substrate 6 is subjected to the CMP treatment, the ultraviolet lamp 19 irradiates the slurry 1 for CMP on the portion 7 to be polished with the ultraviolet light hν. As described above, the photosensitive resin particles 3 contained in the CMP slurry 1 have an acryloyl group which is a photosensitive group that causes a photopolymerization reaction so that the adhesive force is increased by irradiation with the ultraviolet light hν. Therefore, the photosensitive resin particles 3 undergo a photopolymerization reaction represented by the following chemical formula when irradiated with the ultraviolet light hν.

[0057]

[Chemical 1]

By the photopolymerization reaction represented by this chemical formula,
The adhesive force of the photosensitive resin particles 3 is enhanced. That is,
The photosensitive resin particles 3 exhibit a so-called photoadhesive effect by being irradiated with the ultraviolet light hν. As a result, the photosensitive resin particles 3, and thus the aggregates 5 formed by the photosensitive resin particles 3 and the alumina particles 2, are strongly adhered to the polishing surface 16 a of the polishing pad 16. in this way,
By strongly adhering the agglomerates 5 to the polishing surface 16a, a polishing environment close to that of a so-called fixed abrasive method (fixed abrasive pad) can be realized.

Under such a polishing environment, as shown in FIG. 2, a plurality of alumina particles 2 which are abrasive particles are strongly held on the polishing pad 16 through the photosensitive resin particles 3 in a state of being collected. Has been done. As a result, the individual alumina particles 2 are separated from the concave portion 2 of the polishing surface 16 a of the polishing pad 16.
It is possible to almost eliminate the possibility of being buried in 2 and not effectively acting on the wiring Cu film 9 of the polished portion 7. Therefore, the alumina particles 2 are added to the Cu film 9 for wiring.
Can be made to act efficiently, and the polishing rate can be easily improved.

Further, since the alumina particles 2 are strongly held on the polishing pad 16 through the photosensitive resin particles 3, there is almost no possibility of becoming so-called loose abrasive grains. As a result, the wiring for the SiO ₂ film 8 is formed from the surface by the CMP process.
After the Cu film 9 is removed, there is almost no possibility that the alumina particles 2 that have become free abrasive grains will stay on and inside the Cu wiring 9a remaining in the embedded wiring trench 11. Therefore,
Erosion and scratches can be easily suppressed (reduced).

As described above, the photosensitive resin particles 3 are easily irradiated with the ultraviolet light hν to easily enhance the function as assist particles for improving the polishing efficiency of the alumina particles 2. As a result, such photosensitive resin particles 3
The polishing characteristics of the CMP slurry 1 containing C can be easily improved.

As described above, according to the method of manufacturing the semiconductor device of the first embodiment of the present invention, the CMP slurry 1 is irradiated with the ultraviolet light hν during the CMP process, so that the CMP is performed. The photopolymerization reaction is caused to occur in the photosensitive resin particles 3 contained in the slurry 1 for use, and the adhesive force thereof can be appropriately set to an appropriate state. As a result, the polishing characteristics of the CMP slurry 1 are appropriately controlled according to the polishing state of the polished portion 7 of the semiconductor substrate 6, and CM
P processing can be performed. As a result, the polishing rate of the CMP process can be improved, and high flatness, low erosion, and low defect density (scratch-free) with respect to the Cu wiring 9a (embedded wiring, damascene wiring) can be collectively established. That is, according to the CMP method of the first embodiment, it is possible to easily realize a semiconductor device manufacturing process capable of forming a high-quality embedded wiring (damascene wiring) with high processing accuracy and high throughput. .

Therefore, according to the CMP method of the present embodiment, there is almost no possibility of impairing the performance and quality of the semiconductor substrate 6 to which the CMP process is applied, and by extension, the semiconductor device (not shown) using this semiconductor substrate 6. In addition, it is possible to easily suppress a decrease in the yield of the semiconductor device, that is, a decrease in the production efficiency of the semiconductor device. As a result, it is possible to easily and efficiently produce a high-quality and long-lifetime semiconductor device in which performance and quality are not impaired, and to easily reduce the manufacturing cost. That is, the CM of the present embodiment described above
A semiconductor device manufactured by the P method has high performance and quality, has a long life, and is inexpensive.

(Second Embodiment) Next, the second embodiment of the present invention will be described.
A method for manufacturing a CMP slurry and a semiconductor device according to the embodiment will be described with reference to FIGS. 1 to 3 and 5.

As shown in FIG. 3, the CMP slurry according to the second embodiment and the method for manufacturing a semiconductor device have photosensitive resin particles 32 that form aggregates 31 together with abrasive particles 2.
The forming material is different from the forming material of the photosensitive resin particles 3 of the first embodiment described above, and other configurations, steps, actions, and effects are the same. Therefore, the different parts will be described, and the same components as those in the first embodiment described above will be denoted by the same reference numerals and the description thereof will be omitted.

In the slurry for CMP (not shown) of the second embodiment, the photosensitive resin particles have a photosensitive group having an azide group (not shown) which is a photosensitive group that causes a photocrosslinking reaction to increase elasticity by irradiation with ultraviolet light hν. Resin particles 32 are used. As the abrasive particles 2, the alumina particles 2 are used as in the first embodiment described above. As shown in FIG. 3A, the alumina particles 2 and the photosensitive resin particles 32 are aggregated in a slurry solvent (not shown) by the same mechanism as that in which the aggregate 5 of the first embodiment is formed. 31 is formed.

The method for manufacturing the CMP slurry and the semiconductor device according to the second embodiment is the same as the method for manufacturing the CMP slurry and the semiconductor device according to the first embodiment except for the points described above. Needless to say, the problem to be solved can be solved. Then, the slurry for CMP of the present embodiment contains the photosensitive resin particles 32 having as a photosensitive group an azido group that causes a photocrosslinking reaction so that elasticity (viscosity) is increased by irradiation with ultraviolet light hν. ,
The method of manufacturing a semiconductor device according to the present embodiment using this CMP slurry is excellent in the following points.

The photosensitive resin particles 32 forming the aggregate 31 of the second embodiment are elastic (viscous) as they are.
As described in the related art, since the value is low, it is brittle against so-called CMP stress and is likely to deteriorate in shape.
Therefore, for example, when a high load is applied, it is likely to physically (mechanically) collapse, and it may be difficult to sufficiently perform the polishing assist function for the alumina particles 2. As a result, when performing the CMP process using the CMP slurry of the second embodiment containing the photosensitive resin particles 32, it may not be possible to obtain a practically high polishing rate. Further, since it is difficult to obtain the cushioning effect due to the elasticity of the photosensitive resin particles 32, erosion and scratches are likely to occur. As described above, even if the CMP slurry according to the second embodiment of the present invention is used, a sufficiently high polishing rate can be practically obtained as long as the general CMP method as described in the related art is performed. It is difficult and has a small margin against erosion and scratches.

Therefore, the CM according to the second embodiment of the present invention.
In the method of manufacturing a semiconductor device according to the second embodiment using the P slurry, that is, in the CMP method, the above-described first method is used.
Similar to the embodiment, CMP is performed on the polished portion 7 of the semiconductor substrate 6.
While the treatment is being performed, the ultraviolet light h is directed toward the CMP slurry 1 on the polished portion 7 by an ultraviolet lamp (not shown).
Irradiate ν. As described above, the photosensitive resin particles 32 contained in the CMP slurry 1 have an azide group that is a photosensitive group that causes a photocrosslinking reaction so that elasticity (viscosity) is increased by irradiation with ultraviolet light hν. There is. Therefore, the photosensitive resin particles 32 undergo a photocrosslinking reaction when irradiated with the ultraviolet light hν, and their elasticity (viscosity) increases, so that the resistance to CMP stress is improved.

Specifically, the photosensitive resin particles 32 will be described.
The azido group possessed by is efficiently irradiated with ultraviolet light hν to produce nitrene having a high reactivity represented by the following chemical formula.

[0071]

[Chemical 2]

This nitrene causes a hydrogen abstraction reaction, addition to a double bond, and a coupling reaction represented by the following chemical formula, and a crosslinking reaction occurs between the photosensitive resin particles 32 (polymers).

[0073]

[Chemical 3]

When the photosensitive resin particles 32 are cross-linked with each other, the elasticity (viscosity) of them as a whole is increased. as a result,
As shown in FIG. 3 (b), even when a high load is applied, the photosensitive resin particles 32, and thus the aggregates 31, can be elastically deformed flexibly, and thus are hard to physically collapse. That is, the aggregate 31 in the state of being irradiated with the ultraviolet light hν is strong against CMP stress and is unlikely to deteriorate in shape. Therefore, the polishing assist function for the alumina particles 2 can be sufficiently fulfilled, and the cushioning effect due to the elasticity of the photosensitive resin particles 32 itself can be sufficiently exerted.

As described above, according to the CMP slurry according to the second embodiment and the CMP method using the CMP slurry, when the CMP process is performed,
By irradiating the CMP slurry with the ultraviolet light hν, the elasticity (viscosity) of the photosensitive resin particles 32, and by extension, the agglomerates 31 can be enhanced, and their shape deterioration resistance due to CMP stress can be significantly improved. The polishing characteristics of the CMP slurry containing the photosensitive resin particles 32 and the aggregates 31 whose resistance to CMP stress is significantly improved are significantly improved. That is, the polishing rate of the CMP process can be further improved, and higher flatness, lower erosion rate, and lower defect density (further scratch-free) can be collectively established. Therefore, according to the CMP slurry and the CMP method of the second embodiment, it is possible to perform the polishing process on the polished portion 7 of the semiconductor substrate 6 in an appropriate state.

Further, the CMP method of the present embodiment is used when performing the CMP method of the above-described first embodiment, as shown in FIG.
This can be easily performed by using the CMP device 13 shown in.

(Third Embodiment) Next, the third embodiment of the present invention will be described.
A CMP slurry according to an embodiment, a method for manufacturing a semiconductor device, and a method for cleaning a semiconductor device according to one embodiment of the present invention will be described with reference to FIGS. 4 and 5A and 5B. .

The CMP slurry of the third embodiment is
As shown in FIG. 4, the aggregate 4 together with abrasive particles (not shown)
The formation material of the photosensitive resin particles 42 forming No. 1 is different from the formation material of the photosensitive resin particles 3 of the first embodiment described above, and the other configurations are the same. The semiconductor substrate manufacturing method according to the third embodiment is not limited to the semiconductor substrate 6
The method of cleaning the semiconductor device according to the embodiment of the present invention is different from the method of manufacturing the semiconductor device according to the first embodiment described above, after the CMP process is performed on the substrate. Is. Therefore, the different parts will be described, and the same components as those in the first embodiment described above will be denoted by the same reference numerals and the description thereof will be omitted.

In the slurry for CMP (not shown) of the third embodiment, the photosensitive resin particles 42 are used as the photosensitive resin particles, which undergo a photolytic reaction upon irradiation with ultraviolet light hν. Specifically, the photosensitive resin particles 42 of the present embodiment
For this, polymethylmethacrylate (PMMA) particles, which is a kind of methacrylic resin, are used. The abrasive particles 2 are alumina particles 2 as in the first embodiment described above.
To use. The alumina particles 2 and the PMMA particles 42 are
The aggregate 41 is formed in a slurry solvent (not shown) by the same mechanism as that of the aggregate 5 of the first embodiment described above.

Further, in the method of manufacturing a semiconductor device according to the third embodiment, a step of performing a CMP process on the portion to be polished 7 of the substrate to be polished 6 using the CMP slurry of the present embodiment described above, and the CMP process. It is premised that the step of cleaning the substrate 6 to be polished while irradiating the slurry for CMP adhering to the substrate 6 to be treated after the treatment with the ultraviolet light hν is performed. .

The characteristic of the method for manufacturing a semiconductor device of the present embodiment briefly described above is that when cleaning the semiconductor substrate 6 that has been CMP-processed, the used CMP adhered to the portion 7 to be polished or the like is cleaned. The semiconductor substrate 6 is washed while irradiating the slurry for use with ultraviolet light hν. That is, the method of manufacturing the semiconductor device of this embodiment is characterized by the method of cleaning the semiconductor device. Of the method of manufacturing a semiconductor device according to the third embodiment, the characteristic method of cleaning the semiconductor device will be specifically described below with reference to an example.

First, as described in the method of manufacturing the semiconductor device of the first embodiment, the semiconductor substrate 6 is formed in the state shown in FIG.
Of the CMP apparatus 13 shown in FIG.
In, CMP processing is performed. The semiconductor substrate 6 that has been subjected to the CMP process is then used, for example, the used CMP slurry adhering to the portion to be polished 7, the SiO ₂ film 8, the wiring Cu film 9, and the Cu wiring 9a. It is cleaned to remove residue (adhesion) such as shavings, etc., or various particles and dust.

Specifically, the semiconductor substrate 6 that has been subjected to the CMP process is carried from the polishing section 13a of the CMP apparatus 13 to the cleaning section 13b of the CMP apparatus 13 shown in FIG. 5B. The semiconductor substrate 6 is passed between a pair of brush sponges 23 installed in the cleaning section 13b. At this time, the semiconductor substrate 6 and each brush sponge 23
Is supplied with pure water 26 as a cleaning liquid via a plurality of cleaning hoses 25 passing through the cleaning unit 13b and a cleaning nozzle 24 provided at the tip of each cleaning hose 25. To be done. Thereby, the semiconductor substrate 6
Is the used CMP slurry adhering to the portion to be polished 7, the SiO ₂ film 8, the wiring Cu film 9, and
Residues such as shavings of the Cu wiring 9a are washed away.

Further, the cleaning unit 13b of the CMP apparatus 13
As shown in FIG. 5B, the cleaning unit housing 27 has
An ultraviolet lamp 28 as an ultraviolet light irradiation device capable of irradiating the pair of brush sponges 23 and the semiconductor substrate 6 inserted between them with the ultraviolet light hν is installed therein. The ultraviolet lamp 28 is the same as the CMP device 13 described above.
Similarly to the ultraviolet lamp 19 provided in the polishing section 13a, specifically, a black light or a mercury lamp is used. The semiconductor substrate 6 is irradiated with ultraviolet light hν from the ultraviolet lamp 28 while being cleaned in the cleaning unit 13b of the CMP apparatus 13.

The CMP slurry of the third embodiment and the method of manufacturing a semiconductor device of the present embodiment using the CMP slurry are the same as the CMP slurry of the first embodiment except the points described above. Is. On top of that, PMMA causes a photolysis reaction by irradiation with ultraviolet light hν.
A slurry for CMP of the present embodiment containing particles 42,
And C on the semiconductor substrate 6 by using this CMP slurry.
The method of manufacturing a semiconductor device including the step of cleaning the semiconductor substrate 6 while irradiating the slurry for CMP with the ultraviolet light hν after performing the MP treatment is excellent in the following points.

On the polished portion 7 of the semiconductor substrate 6 after the CMP processing is completed, the used CMP slurry, or the scraps of the SiO ₂ film 8, the wiring Cu film 9, the Cu wiring 9a, etc. Remains. Mere SiO ₂ film 8 for wiring
Shavings of the Cu film 9, the Cu wiring 9a, etc. can be almost completely washed off and removed from the polished portion 7 of the semiconductor substrate 6 by a commonly used cleaning method. However, the PMMA particles 42 contained in the used CMP slurry are
It is likely to remain on the Cu wiring 9a of the portion to be polished 7 or the like, and it is difficult to wash it off by a commonly used cleaning method.
The PMMA particles 42 include the Cu film 9 for wiring, metal scraps such as the Cu wiring 9a, and have conductivity.
Therefore, as described in the related art, there is a possibility of causing a short-circuit yield between wirings.
Thus, even if the CMP according to the third embodiment of the present invention is performed,
Even if the cleaning slurry is used, it is difficult to almost completely remove the factors that deteriorate the performance and quality of the semiconductor substrate 6 and the semiconductor device that uses the semiconductor substrate 6, as long as the generally used cleaning method is performed. .

Therefore, in the method of manufacturing a semiconductor device according to the third embodiment of the present invention, that is, the method of cleaning a semiconductor device, the semiconductor substrate 6 is cleaned while the semiconductor substrate 6 is being cleaned.
UV light hν is radiated toward the target. As described above, the PMMA particles 42 contained in the CMP slurry have photosensitivity in which a photolytic reaction occurs by irradiation with the ultraviolet light hν. Therefore, the PMMA particle 42 is
Is irradiated, a photolysis reaction occurs, and its dispersibility (solubility) increases.

Specifically, when the PMMA particles 42 are irradiated with the ultraviolet light hν, the β-cleavage is repeatedly repeated and decomposed as represented by the following chemical formula.

[0089]

[Chemical 4]

As a result, the PMM containing the metal scraps remaining on the Cu wiring 9a of the portion to be polished 7 and the like.
The A particles 42 (residual resin) are easily dissolved in the CMP slurry or the pure water 26 which is the cleaning liquid. Therefore, as shown in FIG. 4, the PMMA particles 42 or the aggregates 4 composed of the alumina particles 2 and the PMMA particles 42 are used.
1, and by extension, a CMP slurry containing them,
It can be washed off almost completely and easily from the part to be polished 7.

Therefore, the possibility of impairing the performance and quality of the semiconductor substrate 6 and the semiconductor device using this semiconductor substrate 6 is extremely low, and the production efficiency of the semiconductor device can be further improved.

The method of cleaning a semiconductor device, which is a characteristic part of the method of manufacturing a semiconductor device of this embodiment described above, can be expressed as follows.

In the semiconductor device cleaning method for cleaning the substrate 6 to be polished, which is polished using the CMP slurry, C
The MP slurry contains PMMA particles 42 as photosensitive resin particles that undergo a photodecomposition reaction upon irradiation with light (ultraviolet light hν), and adheres to the substrate 6 to be polished when cleaning the substrate 6 to be polished. And irradiating the slurry for CMP which is being performed with light (ultraviolet light hν).

The CMP slurry according to the present invention and the semiconductor device manufacturing method (semiconductor device cleaning method)
Are not limited to the first to third embodiments described above. Without departing from the spirit of the present invention, a part of the configuration or the process can be changed to various settings, or various settings can be used in combination.

For example, in a CMP slurry, photosensitive resin particles that cause a photopolymerization reaction by irradiation with light having a predetermined wavelength, photosensitive resin particles that cause a photocrosslinking reaction by irradiation with light having a predetermined wavelength, and a predetermined wavelength. The photosensitive resin particles that cause a photodecomposition reaction upon irradiation with light having the above-mentioned properties may be appropriately combined and mixed and used.

The material of each of the photosensitive resin particles is
The invention is not limited to the one described in the first to third embodiments described above. For example, the photosensitive group that the photosensitive resin particles that undergo a photocrosslinking reaction by irradiation with light having a predetermined wavelength has not only an azido group, but also a diazo group, an azido group, a cinnamoyl group, a cinnamylidene group, a chalcone residue, an isocoumarin group. , At least one group selected from the group consisting of 2,5-dimethoxystilbene residue, styrylpyridinium residue, thymine residue, α-phenylmalemade, anthracene residue, and 2-pyrone residue. If you have.

Alternatively, the photosensitive resin particles which undergo a photolytic reaction upon irradiation with light having a predetermined wavelength are not limited to PMMA particles. For example, a methacrylic resin other than PMMA, and a phenol resin, a urea resin, a melamine resin, a polystyrene resin, a polyacetal resin, a polycarbonate resin having a hardness equivalent to that of the methacrylic resin,
And at least one resin selected from the group consisting of epoxy resins.

The materials for the abrasive particles are the above-mentioned first to first materials.
It is not limited to the alumina particles described in the third embodiment. For example, alumina, silica, titania, red iron oxide,
It may be composed of at least one kind of inorganic particles selected from the group consisting of ceria, carbon, manganese dioxide, and a mixture thereof.

The oxidizing agent added to the CMP slurry is not limited to hydrogen peroxide described in the first embodiment. For example, the standard electrode potential selected from the group consisting of hydrogen peroxide, ammonium peroxodisulfate, phosphoric acid, nitric acid, and cerium ammonium nitrate is -3.0 to +.
It suffices to contain at least one kind of oxidizing agent having a voltage of 3.0V. Further, their content in the CMP slurry may be 0.1 to 5.0% in weight percent concentration.

The same effects as those of the above-described first to third embodiments can be obtained with a CMP slurry containing photosensitive resin particles, abrasive particles, or an oxidizing agent made of the materials listed above.

Furthermore, the material of the substrate to be polished, which is polished by the method for manufacturing a semiconductor device according to the present invention, is not limited to the above-mentioned wiring Cu film. For example, a film containing a predetermined metal as a main component, which is formed in the portion to be polished and is selectively polished by the method for manufacturing a semiconductor device according to the present invention, is Al, Cu, W,
Any one of Ti, Mo, Nb, Ta and V metals, alloys, nitrides, borides, oxides containing at least one of these metals as a main component, or these It may be a single layer film or a laminated film of a metal compound formed by combining at least two kinds.

The same effects as those of the above-described first to third embodiments can be obtained as long as the portion to be polished is made of the metal made of the materials listed above.

[0103]

According to the CMP slurry of the present invention, by irradiating the CMP slurry with light, the properties of the photosensitive resin particles, and by extension, the polishing characteristics of the CMP slurry, are appropriately adjusted. Can be set. Therefore, it is possible to suppress the possibility of impairing the performance and quality of the semiconductor device and easily improve the production efficiency of the semiconductor device.

Further, according to the method for manufacturing a semiconductor device of the present invention, the polishing characteristics of the CMP slurry are appropriately set in accordance with the polishing state of the portion to be polished, and the chemical mechanical polishing is performed. It can be performed. Therefore, it is possible to suppress the possibility of impairing the performance and quality of the semiconductor device and easily improve the production efficiency of the semiconductor device.

Further, according to another method of manufacturing a semiconductor device of the present invention, it becomes easy to remove the used CMP slurry from the substrate to be polished after polishing. Therefore, it is possible to suppress the possibility of impairing the performance and quality of the semiconductor device,
Moreover, the production efficiency of the semiconductor device can be easily improved.

[Brief description of drawings]

FIG. 1A to FIG. 1C are views showing a simplified main part of a CMP slurry according to a first embodiment of the present invention.

2 is a first example of the present invention using the CMP slurry of FIG. 1;
6A to 6C are process diagrams showing the outline of the method for manufacturing the semiconductor device according to the embodiment.

FIG. 3 is a process diagram showing an outline of a method of manufacturing a semiconductor device according to a second embodiment of the present invention using the CMP slurry according to the second embodiment of the present invention.

FIG. 4 is a process diagram showing an outline of a method for cleaning a semiconductor device according to one embodiment of the present invention, which uses a CMP slurry according to a third embodiment of the present invention.

FIG. 5 is a semiconductor device manufacturing apparatus used when performing a semiconductor device manufacturing method using a CMP slurry according to an embodiment of the present invention and a semiconductor device cleaning method,
FIG. 3A is a perspective view showing a polishing unit and FIG.

6A and 6B are CMs according to a conventional technique.
7A to 7C are process diagrams showing an outline of a method for manufacturing a semiconductor device using a P slurry.

7A and 7B are CMs according to a conventional technique.
7A to 7C are process diagrams showing an outline of a method for manufacturing a semiconductor device using a P slurry.

8A and 8B are CMs according to a conventional technique.
7A to 7C are process diagrams showing an outline of a method for manufacturing a semiconductor device using a P slurry.

FIG. 9: C using a CMP slurry according to a conventional technique
Sectional drawing which shows the semiconductor substrate after performing MP polishing.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... CMP slurry 2 ... Alumina particle (abrasive particle) 3 ... Photocurable photosensitive resin particle (photosensitive resin particle) having an acryloyl group 4 ... Pure water (solvent of CMP slurry) 5 ... Aggregate (alumina) Aggregate of polishing particles and photosensitive resin particles 6 ... Semiconductor substrate (substrate to be polished) 7 ... Polished portion 8 ... SiO ₂ film (insulating film, polished portion) 9 ... Cu film for wiring (metal film for wiring) , Part to be polished 31 ... Aggregate (aggregate of alumina particles and photosensitive resin particles) 32 ... Photosensitive resin particles having amide group (photosensitive resin particles) 41 ... Aggregate (alumina particles and photosensitive resin particles) 42 ... PMMA (photosensitive resin particles) A ... Primary particle diameter of photosensitive resin particles B ... Primary particle diameter of alumina particles (primary particle diameter of abrasive particles) hν ... Ultraviolet light (light having a predetermined wavelength) )

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI Theme Coat (reference) C09K 3/14 C09K 3/14 550D 550J (72) Inventor Hiroyuki Yano 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa F-term in Toshiba Yokohama office of stock company (reference) 3C058 AA07 AA09 AC04 CB01 CB03 DA17

Claims (17)

[Claims] 1. A slurry for CMP comprising abrasive particles and photosensitive resin particles which undergo at least one of a photopolymerization reaction and a photocrosslinking reaction upon irradiation with light. 2. The slurry for CMP according to claim 1, wherein the photosensitive resin particles cause a photopolymerization reaction by the irradiation of the light to increase the adhesive force. 3. The slurry for CMP according to claim 2, wherein the photosensitive resin particles have an acryloyl group as a photosensitive group that causes a photopolymerization reaction when irradiated with the light. 4. The slurry for CMP according to claim 1, wherein the photosensitive resin particles undergo a photo-crosslinking reaction upon irradiation with the light to increase elasticity. 5. The photosensitive resin particle comprises a diazo group, an azide group, a cinnamoyl group, a cinnamylidene group, a chalcone residue, an isocoumarin group, and 2,5-dimethoxy as a photosensitive group that causes a photocrosslinking reaction by irradiation with the light. A stilbene residue, a styrylpyridinium residue, a thymine residue, an α-phenylmalemade, an anthracene residue, and a 2-pyrone residue are contained in at least one type of group. The slurry for CMP according to 4. 6. The photosensitive resin particles have a primary particle diameter of 5 to 5.
It is 1000 nm, The slurry for CMP in any one of Claims 1-5 characterized by the above-mentioned. 7. The abrasive particles are composed of at least one kind of inorganic particles selected from the group consisting of alumina, silica, titania, red iron oxide, ceria, carbon, manganese dioxide, and a mixture thereof. The slurry for CMP according to any one of claims 1 to 6. 8. The abrasive particles have a primary particle size of 5 to 100.
It is 0 nm, The slurry for CMP in any one of Claims 1-7 characterized by the above-mentioned. 9. The slurry for CMP according to claim 1, wherein the abrasive particles adhere to the surfaces of the photosensitive resin particles to form aggregates. 10. The CMP slurry according to claim 1, wherein the light is ultraviolet light. 11. When the CMP slurry according to claim 1 is used to perform a chemical mechanical polishing treatment on a portion to be polished of a substrate to be polished, A method of manufacturing a semiconductor device, comprising the step of irradiating the CMP slurry with light. 12. A chemical mechanical polishing treatment is applied to a portion to be polished of a substrate to be polished by using a CMP slurry containing polishing particles and a photosensitive resin particle which undergoes a photodecomposition reaction upon irradiation with light. And a step of washing the substrate to be polished while irradiating the slurry for CMP adhering to the substrate to be polished after the chemical mechanical polishing treatment with light, A method of manufacturing a semiconductor device, comprising: 13. The photosensitive resin particles are made of at least one resin selected from the group consisting of methacrylic resin, phenol resin, urea resin, melamine resin, polystyrene resin, polyacetal resin, polycarbonate resin, and epoxy resin. The method of manufacturing a semiconductor device according to claim 12, wherein 14. The method of manufacturing a semiconductor device according to claim 13, wherein the methacrylic resin is polymethylmethacrylate. 15. The method of manufacturing a semiconductor device according to claim 11, wherein the light is ultraviolet light. 16. The chemical-mechanical polishing is used to selectively polish a film containing a metal as a main component formed on the portion to be polished. A method of manufacturing a semiconductor device according to item 1. 17. The film containing metal as a main component is formed of Al, Cu,
Any one of W, Ti, Mo, Nb, Ta, V metal,
Single layer film or laminated film of an alloy, a nitride, a boride, an oxide containing at least one of these metals as a main component, or a metal compound formed by combining at least two of these. 17. The method for manufacturing a semiconductor device according to claim 16, wherein: