JP2003101122A - Semiconductor laser module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser module which can prevent the life of a semiconductor laser element from being shortened due to temperature rise, without incurring keen increase of running cost and manufacture cost and further the enlargement of its external appearance. SOLUTION: For the semiconductor laser module 1, the base plate 3 in a package 2 is provided with a heat conductor 3P which carries the exhaust heat from a thermocouple module M to the periphery of the base plate 3, and is provided with a heat conductor 4P which carries the heat carried by 3P to a housing part 4. In another embodiment, a vacuum chamber (heat screen means) which prevents the propagation of heat is provided on the inside of the housing to a heat pipe provided in the housing part of a package.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser module, and more particularly, to a base plate portion on which a fixed substrate on which a semiconductor laser element is mounted is installed via a thermoelectric module, a semiconductor laser element, a fixed substrate together with the base plate portion, The present invention also relates to a semiconductor laser module that includes a package having a housing portion that houses the thermoelectric module, and that absorbs heat generated from the semiconductor laser element by the thermoelectric module and discharges the heat to the base plate portion of the package.

[0002]

2. Description of the Related Art As shown in FIGS. 7 and 8, a semiconductor laser module A, which is a device for optically coupling a laser beam from a semiconductor laser element to an optical fiber, includes a laser diode (semiconductor laser element) inside a package P. ) D
It is configured by accommodating mechanical parts such as.

The package P is composed of a rectangular plate-shaped base plate portion B having mounting holes and a rectangular box-shaped housing portion H. The base plate portion B has a laser diode D, a lens L and the like. The mounted submount (fixed substrate) S is installed via a thermoelectric module M as a cooling device.

A housing portion H is joined to the base plate portion B, and the above-mentioned laser diode D,
The lens L, the submount S, the thermoelectric module M, and the like are surrounded by the base plate portion B and the housing portion H.

An optical fiber cord C is attached to the housing portion H in such a manner that an optical fiber (not shown) faces the lens L, and a large number of connecting leads T project from the housing portion H. .

Incidentally, a package P consisting of a base plate portion B and a housing portion H is hermetically sealed, and inside the hermetically sealed package P, for the purpose of preventing oxidation and dew condensation of the laser diode D, argon or the like is used. It is filled with rare gas and dry nitrogen.

Here, since the laser diode D of the semiconductor laser module A tends to have a significantly shortened life as the temperature rises, the thermoelectric module M as a cooling device is used as described above, and the base plate of the package P is used. A radiation fin F is generally attached to the portion B.

That is, as the semiconductor laser module A is operated, the heat generated from the laser diode D is generated by the submount S and the package P as shown by an arrow o in FIG.
It propagates through the atmosphere inside and reaches the thermoelectric module M and is absorbed by the low temperature side substrate Mc in the thermoelectric module M.

On the other hand, the high temperature side substrate Mh of the thermoelectric module M
Exhaust heat from the package P as shown by the arrow p in FIG.
To the base plate portion B of FIG.
8 propagates to the radiating fins F and is radiated from the radiating fins F to the outside air as indicated by an arrow r in FIG.

As described above, when the semiconductor laser module A is in operation, the heat generated from the laser diode D is radiated from the base plate portion B via the radiation fins F, so that the temperature rise in the package P is suppressed. .

[0011]

By the way, in the conventional semiconductor laser module A, due to the increase of the transmission frequency accompanying the increase of the communication speed and the increase of the optical output accompanying the increase of the transmission distance, The amount of heat generated by the laser diode D tends to increase.

Further, as materials that can reduce the manufacturing cost of the package P, ceramic materials, resin materials, etc., which are cheaper than conventional metal materials, have been attracting attention, but these materials are generally more heat-resistant than metal materials. Poor conductivity.

As described above, by increasing the amount of heat generated by the laser diode D and employing a material having poor thermal conductivity for the package P, heat is trapped inside the package P when the semiconductor laser module A is in operation, There is an inconvenience that the life of the laser diode D is shortened due to the rise in temperature.

In order to solve the above-mentioned inconvenience, the input power is increased in order to enhance the cooling capacity of the thermoelectric module M, or the thermoelectric module M having a large size and a high cooling capacity is adopted, and further, a large radiating fin having a large heat capacity is used. It may be possible to adopt it.

However, the running cost increases with the increase of the input power, the manufacturing cost increases with the adoption of the large thermoelectric module, and the appearance becomes large due to the adoption of the large thermoelectric module and the radiation fin. There is the inconvenience of leaving.

In view of the above situation, the present invention shortens the life of the semiconductor laser device due to the temperature rise, causes a rise in running cost and manufacturing cost, and enlarges the appearance including the radiation fin. It is an object of the present invention to provide a semiconductor laser module that can be prevented in advance.

[0017]

In order to achieve the above object, a semiconductor laser module according to the invention of claim 1 has a base plate portion on which a fixed substrate on which a semiconductor laser element is mounted is installed via a thermoelectric module. A package including the base plate portion, a semiconductor laser element, a fixed substrate, and a housing portion that houses the thermoelectric module, wherein the heat generated by the semiconductor laser element is absorbed by the thermoelectric module and the base plate portion of the package from the thermoelectric module In the semiconductor laser module that exhausts heat to the base plate, the base plate portion of the package is provided with base plate side heat transporting means for transporting the exhaust heat from the thermoelectric module toward the peripheral edge of the base plate portion, and the housing portion of the package is The transported heat by scan plate heat transporting means is provided with a housing-side heat transport means for transporting the housing unit.

According to the above structure, the heat generated from the semiconductor laser element is radiated to the outside through the base plate portion and the housing portion of the package, so that the conventional semiconductor laser module radiates heat only from the base plate portion. In comparison, the heat dissipation characteristics are significantly improved.

Therefore, it is possible to suppress the temperature rise in the package without increasing the electric power input to the thermoelectric module, adopting a large thermoelectric module, or adopting a large radiating fin.

Therefore, according to the semiconductor laser module of the first aspect of the present invention, the shortening of the life of the semiconductor laser element due to the temperature rise is caused by the increase in running cost and manufacturing cost, and further by the radiation fin. It is possible to prevent the appearance without increasing the size of the appearance.

The semiconductor laser module according to a second aspect of the present invention is the semiconductor laser module according to the first aspect of the invention, in which heat is transferred to the inside of the housing relative to the heat transport means on the housing side of the housing portion of the package. A heat shield means is provided to prevent the heat.

According to the above construction, the heat shielding means provided in the housing portion can prevent the heat transferred to the housing portion of the package by the heat transporting means on the housing side from flowing back into the inside of the package. .

Therefore, according to the semiconductor laser module of the second aspect of the present invention, the inflow of heat from the housing portion to the thermoelectric module housed inside the package is reduced, and the load on the thermoelectric module is reduced. Therefore, the cooling efficiency of the thermoelectric module is improved.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below with reference to the drawings showing embodiments. FIG. 1 shows an embodiment of a semiconductor laser module according to the present invention. The semiconductor laser module 1 is constructed by housing a mechanical component such as a laser diode (semiconductor laser element) D inside a package 2. Has been done.

The package 2 comprises a rectangular plate-shaped base plate portion 3 in which mounting holes are formed, and a rectangular box-shaped housing portion 4. The base plate portion 3 is provided with a laser diode D, a lens L and the like. The mounted submount (fixed substrate) S is installed via a thermoelectric module M as a cooling device.

Here, in the thermoelectric module M, the submount (fixed substrate) S is brought into contact with the low temperature side surface thereof, and the high temperature side surface thereof is brought into contact with the base plate portion 3, so that the submount S and the base plate portion are brought into contact with each other. It is intervened between 3 and.

As a type of the thermoelectric module M, a substrate (insulating substrate) is provided on each of the low temperature side and the high temperature side.
There are those having a substrate (insulating substrate) on either the low temperature side or the high temperature side, and those not having a substrate (insulating substrate), but in the present invention, any type of thermoelectric module is adopted. It is possible to

The sealed package 2 containing the laser diode D, the lens L, the submount S, the thermoelectric module M and the like is filled with a rare gas such as argon or dry nitrogen.

An optical fiber cord (not shown) (see reference numeral C in FIG. 7) is attached to the housing portion 4 of the package 2, and a large number of connecting leads (not shown) are provided from the housing portion 4. The reference numeral T in 7) is projected.

As described above, the semiconductor laser module 1
The basic configuration of is the same as that of the conventional semiconductor laser module A shown in FIGS. 7 and 8.

On the other hand, in the semiconductor laser module 1, the heat transfer material is provided on the base plate portion 3 of the package 2.
(Base plate side heat transport means) 3P is provided,
The heat transfer body 3P has a plate shape similar to that of the base plate portion 3 and is installed in a manner embedded in the base plate portion 3.

Further, the housing portion 4 of the package 2 is provided with a heat transfer body (housing-side heat transport means) 4P, and the heat transfer body 4P has a rectangular box shape similar to the housing 4. It is installed in a manner embedded in the housing part 4.

Here, the heat transfer body 3P provided on the base plate part 3 and the heat transfer body 4P provided on the housing part 4 are Cu (copper), Al (aluminum), and Cu-W, respectively.
It is formed of a metal material having high thermal conductivity such as a (copper-tungsten) alloy.

The base plate portion 3 and the housing portion 4 which compose the package 2 are made of general Ni-Co.
-Fe (nickel-cobalt-iron) alloy, Fe-Ni
It is formed of an (iron-nickel) alloy or the like.

The semiconductor laser module 1 having the above-mentioned configuration
In the above, the heat generated from the laser diode D is radiated from the base plate portion 3 of the package 2 to the outside air via the radiation fins F, and is also radiated to the outside air via the housing portion 4 of the package 2.

That is, with the operation of the semiconductor laser module 1, the heat generated from the laser diode D propagates through the atmosphere in the submount S and the package 2 as shown by the arrow a, reaches the thermoelectric module M, and the thermoelectric module M Heat is absorbed on the low temperature side of the module M.

The heat exhausted from the high temperature side surface of the thermoelectric module M propagates to the base plate portion 3 of the package 2 as shown by an arrow b, and further the heat transfer body 3 as shown by an arrow c.
It is transported by P toward the peripheral edge of the base plate portion 3.

The heat transferred to the peripheral edge of the base plate portion 3 propagates to the heat transfer body 4P provided in the housing portion 4, and then the heat transfer body 4P of the housing portion 4 passes through the heat transfer body 4P as shown by arrows d and e. It is transported to the entire area and radiated to the outside air through the housing portion 4 as shown by arrow f.

On the other hand, from the thermoelectric module M to the package 2
Part of the heat that has propagated to the base plate portion 3 propagates to the radiation fins F attached to the base plate portion 3 as indicated by arrow h, and is radiated to the outside air as indicated by arrow i.

As described above, according to the semiconductor laser module 1 having the above-described structure, the heat generated from the laser diode D during operation is radiated to the outside through the base plate portion 3 and the housing portion 4 of the package 2. Therefore, the heat radiation characteristics are significantly improved as compared with the conventional semiconductor laser module that radiates heat only from the base plate portion.

Therefore, it is possible to prevent the life of the semiconductor laser device from being shortened due to the temperature rise, without causing a rise in running cost and manufacturing cost and an increase in size of the appearance including the heat radiation fins.

Further, by radiating heat from the housing portion 4 of the package 2, if the necessary and sufficient heat radiation amount can be achieved without using the heat radiation fins F, the heat radiation fins F are not attached to reduce the parts cost. It is possible to reduce the manufacturing cost and miniaturize the device in which the semiconductor laser module 1 is mounted.

In the above-described embodiment, the heat transfer body 3P and the heat transfer body 4P are formed of the plate of the metal material having high heat conductivity, but the rod of the metal material having high heat conductivity is also used. A knitted sheet-shaped or box-shaped material may be used.

Further, as a means for assisting the heat radiation from the housing 4, it is possible to form a radiation fin on the outer surface of the housing 4. At this time, it is effective to make the heat radiation fins into a pin shape so that heat is radiated favorably by the cooling air regardless of the posture of the semiconductor laser module in the installed state.

The semiconductor laser module 10 shown in FIG.
On the base plate portion 13 of the package 12,
A heat pipe (base plate side heat transporting means) 13H is provided, and the heat pipe 13H is installed by being embedded in the base plate portion 13 in such a manner as to spread over the entire area of the base plate portion 13.

Further, the housing portion 14 of the package 12
Includes a heat pipe (heat transport means on the housing side) 14H
The heat pipe 14H is embedded and installed in the housing portion 14 in such a manner as to spread over the entire area of the housing portion 14.

Here, the semiconductor laser module 10 has a heat pipe 13 instead of the heat transfer bodies 3P and 4P.
There is basically no difference from the semiconductor laser module 1 shown in FIG. 1 except that H and 14H are adopted.

According to the above-mentioned structure, when the semiconductor laser module 10 is in operation, heat generated from the laser diode D is generated by the submount S and the package 1 as shown by an arrow a.
2 propagates through the atmosphere to reach the thermoelectric module M and is absorbed by the low temperature side surface of the thermoelectric module M.

The exhaust heat from the high temperature side surface of the thermoelectric module M propagates to the base plate portion 13 of the package 12 as shown by the arrow b, and is further transported by the heat pipe 13H toward the peripheral edge of the base plate portion 13 as shown by the arrow c. It

The heat transferred to the periphery of the base plate portion 13 is the heat pipe 14 provided in the housing portion 14.
After propagating to H, it is transported to the entire area of the housing portion 14 via the heat pipe 14H as indicated by arrows d and e, and is radiated to the outside air via the housing portion 14 as indicated by arrow f.

On the other hand, the thermoelectric module M to the package 1
A part of the heat propagated to the second base plate portion 13 propagates to the radiation fins F attached to the base plate portion 13 as shown by the arrow h, and is radiated to the outside air as shown by the arrow i.

Thus, the semiconductor laser module 10
According to the above, heat generated from the laser diode D during operation is generated by the base plate portion 1 of the package 12.
Since the heat is radiated to the outside via the housing 3 and the housing portion 14, the heat radiation characteristic is significantly improved as compared with the conventional semiconductor laser module which radiates the heat only from the base plate portion.

In the above-described embodiment, the heat pipe 13H and the heat pipe 14H formed in a predetermined shape are embedded in the base plate portion 13 and the housing portion 14, respectively.
When forming the housing portion 14, micropores having a predetermined shape are formed by a micromachining technique, and a cooling medium is injected into the pores and then sealed, so that heat is generated inside the base plate portion 13 and the housing portion 14. It is also possible to construct a pipe.

The semiconductor laser module 20 shown in FIG.
On the base plate portion 23 of the package 22,
A heat transfer body (base plate side heat transporting means) 23P is provided, and the heat transfer body 23P has a plate shape similar to that of the base plate portion 23, and is integrally installed so as to cover the upper surface of the base plate portion 23. There is.

Further, the housing portion 24 of the package 22
Is provided with a heat transfer body (housing-side heat transport means) 24P. The heat transfer body 24P has a rectangular box shape similar to the housing 24, and is integrally formed so as to cover the outer surface of the housing portion 24. It is installed in.

Here, in the structure of the semiconductor laser module 20, the installation positions of the heat transfer members 23P and 24P are different from each other.
There is basically no difference from the semiconductor laser module 1 shown in FIG. 1 except that P and P are different.

Regarding the heat propagation (transportation) path in the package 22 until the heat generated from the laser diode D is radiated to the outside air, there is basically a difference from the semiconductor laser module 1 shown in FIG. Absent.

Therefore, also in the semiconductor laser module 20, heat generated from the laser diode D during operation is generated by the base plate portion 23 of the package 22.
Since heat is radiated to the outside via the housing part 24 and
As compared with the conventional semiconductor laser module that radiates heat only from the base plate portion, the heat radiation characteristic is significantly improved.

The semiconductor laser module 30 shown in FIG.
On the base plate portion 33 of the package 32,
A heat pipe (base plate side heat transporting means) 33H is provided, and the heat pipe 33H is embedded and installed in a position close to the upper surface of the base plate portion 33 in such a manner as to spread over the entire area of the base plate portion 33. Has been done.

Further, the housing portion 34 of the package 32
Includes a heat pipe (housing side heat transport means) 34H
The heat pipe 34H is embedded and installed near the outer surface of the housing portion 34 in such a manner as to spread over the entire area of the housing 34.

Here, the configuration of the semiconductor laser module 30 is basically the same as that of the semiconductor laser module 10 shown in FIG. 2 except that the installation positions of the heat pipes 33H and 34H are different from those of the heat pipes 13H and 14H. There is no change to.

Also, regarding the heat propagation (transport) path in the package 32 until the heat generated from the laser diode D is radiated to the outside air, there is basically a difference from the semiconductor laser module 10 shown in FIG. Absent.

Therefore, also in the semiconductor laser module 30, heat generated from the laser diode D during operation is generated by the base plate portion 33 of the package 32.
And heat is dissipated to the outside through the housing portion 34,
As compared with the conventional semiconductor laser module that radiates heat only from the base plate portion, the heat radiation characteristic is significantly improved.

The semiconductor laser module 40 shown in FIG.
On the base plate portion 43 of the package 42,
A heat pipe (base plate side heat transporting means) 43H is provided, and the heat pipe 43H is embedded and installed in a position close to the upper surface of the base plate portion 43 in such a manner that it spreads over the entire area of the base plate portion 43. Has been done.

Further, the housing portion 44 of the package 42
Includes a heat pipe (housing side heat transport means) 44H
The heat pipe 44H is embedded and installed at a position close to the outer surface of the housing portion 44 in such a manner as to spread over the entire area of the housing 44.

Further, the housing portion 4 of the package 42
4, a vacuum chamber 44C (heat shielding means) is provided on the inner side of the housing with respect to the heat pipe 44H described above.
It has a square box-like shape.

Here, the semiconductor laser module 40 is used.
The configuration is basically the same as that of the semiconductor laser module 30 shown in FIG. 4 except that the housing 44 is provided with a vacuum chamber 44C as a heat shield.

According to the above-mentioned structure, when the semiconductor laser module 40 is in operation, the heat generated from the laser diode D is generated by the submount S and the package 4 as shown by the arrow a.
2 propagates through the atmosphere to reach the thermoelectric module M and is absorbed by the low temperature side surface of the thermoelectric module M.

The heat exhausted from the high temperature side surface of the thermoelectric module M propagates to the base plate portion 43 of the package 42 as shown by the arrow b, and is further transported to the peripheral edge of the base plate portion 43 by the heat pipe 43H as shown by the arrow c. It

The heat transferred to the periphery of the base plate portion 43 is the heat pipe 44 provided in the housing portion 44.
After propagating to H, it is transported to the entire area of the housing portion 44 via the heat pipe 44H as indicated by arrows d and e, and is radiated to the outside air via the housing portion 14 as indicated by arrow f.

Here, although the heat generated from the laser diode D is transported to the housing portion 44 by the heat pipe 43H and the heat pipe 44H described above, this heat does not circulate inside the package 42. This is suppressed by the vacuum chamber 44C provided as the heat shield means in the housing portion 44.

On the other hand, from thermoelectric module M to package 1
Part of the heat propagated to the second base plate portion 13 propagates to the heat radiation fins F attached to the base plate portion 13 as shown by the arrow h, and is radiated to the outside air as shown by the arrow i.

As described above, according to the semiconductor laser module 40 described above, the laser diode D during operation is
Since the heat generated from the heat is radiated to the outside via the base plate portion 43 and the housing portion 44 of the package 42, the heat radiation characteristic is significantly improved as compared with the conventional semiconductor laser module that radiates heat only from the base plate portion. It will be.

Further, according to the above-mentioned semiconductor laser module 40, the inflow of heat from the housing portion 44 into the thermoelectric module M housed in the package 42 is reduced, and the load on the thermoelectric module M is reduced. Therefore, the cooling efficiency of the thermoelectric module M is improved.

Here, in the above-mentioned embodiment, the heat shield means is constituted by the vacuum chamber 44C.
Instead of the vacuum chamber, a chamber whose inside pressure is reduced, a chamber whose inside pressure is atmospheric pressure, or a chamber whose inside is filled with a gas having low thermal conductivity may be used.

Further, instead of the heat pipe 43H and the heat pipe 44H described above, the heat transfer body 2 shown in FIG.
It goes without saying that the same operational effects as described above can be obtained even in the configuration employing 3P and the heat transfer body 24P.

A semiconductor laser module 50 shown in FIG.
Is provided with a heat insulator (heat shield means) 54M on the inner side of the housing portion 54 of the package 52 with respect to the heat pipe (housing side heat transport means) 54H, and the heat insulator 54M has thermal conductivity. It is made of a low resin material and has a rectangular box shape imitating the housing portion 54.

Here, the structure of the semiconductor laser module 50 is basically different from that of the semiconductor laser module 40 shown in FIG. 5 except that a heat insulating member 54M as a heat shielding means is provided in place of the vacuum chamber 44C. Absent.

Regarding the propagation (transport) path of heat in the package 52 until the heat generated from the laser diode D is radiated to the outside air, there is basically a difference from the semiconductor laser module 40 shown in FIG. Absent.

Further, the heat insulating body 54M provided in the housing portion 54 allows the housing portion 54 to be separated from the package 52
Regarding the configuration that suppresses the circulation of heat inside the
There is no difference from the semiconductor laser module 40 shown in FIG.

Therefore, according to the above-described semiconductor laser module 50, the heat generated from the laser diode D during operation is radiated to the outside through the base plate portion 53 and the housing portion 54 of the package 52, and thus the base plate portion. Compared with the conventional semiconductor laser module that radiates heat only from the heat radiation characteristic, the heat radiation characteristic is significantly improved.

Further, according to the above-mentioned semiconductor laser module 50, the inflow of heat from the housing portion 54 into the thermoelectric module M housed in the package 52 is reduced, and the load on the thermoelectric module M is reduced. Therefore, the cooling efficiency of the thermoelectric module M is improved.

Here, in the above-mentioned embodiment, the heat shield means is constituted by the heat insulating body 54M formed of a resin material having low heat conductivity, but as the material forming the heat insulating body 54M, a heat conductive material is used. It goes without saying that an appropriate low material can be arbitrarily selected and adopted.

Further, instead of the heat pipe 53H and the heat pipe 54H described above, the heat transfer body 2 shown in FIG.
It goes without saying that the same operational effects as described above can be obtained even in the configuration employing 3P and the heat transfer body 24P.

Here, in each of the above-mentioned embodiments, the base plate portion and the housing portion constituting the package are made of a general Ni-Co-Fe (nickel-cobalt-
The base plate portion and the housing portion may be formed of a resin material, although they are formed of an iron alloy, an Fe-Ni (iron-nickel) alloy, or the like.

As described above, when the package is formed of the resin material having low heat conductivity, in the semiconductor laser module 20 shown in FIG. 3, the heat transfer body (housing side heat transport means) 24P is provided on the outer surface of the housing 24. By being provided, in other words, the housing 24 made of a resin material and functioning as a heat shield means is located on the inner side of the housing with respect to the heat transfer body 24P, so that the heat transferred by the heat transfer body 24P is transferred to the package 24. It is possible to suppress recirculation in the interior of the.

Similarly, when the package is made of a resin material having low thermal conductivity, in the semiconductor laser module 30 shown in FIG. 4, the heat pipe (housing side heat transporting means) 34H is placed close to the outer surface of the housing 34. By providing, in other words, the housing 34 made of a resin material and functioning as a heat shield means is located on the inner side of the housing with respect to the heat pipe 34H, so that the heat transported by the heat pipe 34H is circulated to the inside of the package 34. Can be suppressed.

Even when the package is made of a resin material, it is effective to construct the heat shield means in a vacuum chamber or the like. Further, not limited to a metal material or a resin material, it is also effective to adopt a functionally graded material having a characteristic that the thermal conductivity decreases from the outer surface to the inner surface of the housing portion.

[Brief description of drawings]

FIG. 1 is a conceptual diagram showing an embodiment of a semiconductor laser module according to the present invention.

FIG. 2 is a conceptual diagram showing another embodiment of the semiconductor laser module according to the present invention.

FIG. 3 is a conceptual diagram showing another embodiment of the semiconductor laser module according to the present invention.

FIG. 4 is a conceptual diagram showing another embodiment of the semiconductor laser module according to the present invention.

FIG. 5 is a conceptual diagram showing another embodiment of the semiconductor laser module according to the present invention.

FIG. 6 is a conceptual diagram showing another embodiment of the semiconductor laser module according to the present invention.

7A and 7B are an external perspective view and a side sectional view showing a conventional semiconductor laser module.

FIG. 8 is a conceptual diagram showing a conventional semiconductor laser module.

[Explanation of symbols]

1, 10, 20, 30, 40, 50 ... Semiconductor laser module, 2, 12, 22, 32, 42, 52 ... Package, 3, 13, 23, 33, 43, 53 ... Base plate part, 4, 14, 24 , 34, 44, 54 ... Housing part, 3P, 23P ... Heat transfer body (base plate side heat transport means), 4P, 24P ... Heat transfer body (housing side heat transport means), 13H, 33H, 43H, 53H ... Heat pipe (Base plate side heat transporting means), 14H, 34H, 44H, 54H ... Heat pipe (housing side heat transporting means), 44C ... Vacuum chamber (heat shielding means), 54M ... Insulator (heat shielding means), D ... Laser diode (Semiconductor laser element), L ... Lens, S ... Submount (fixed substrate), M ... Thermoelectric module, F ... Radiating fin.

Claims (2)

[Claims] 1. A base plate portion on which a fixed substrate on which a semiconductor laser element is mounted is installed via a thermoelectric module, and a housing portion which accommodates the semiconductor laser element, the fixed substrate, and the thermoelectric module together with the base plate portion. A semiconductor laser module comprising a package having, wherein the heat generated from the semiconductor laser device is absorbed by the thermoelectric module and is exhausted from the thermoelectric module to the base plate portion of the package, wherein the base plate portion in the package. A heat transfer means for transporting exhaust heat from the thermoelectric module toward the peripheral edge of the base plate portion, and transporting the heat to the housing portion of the package by the heat transport means on the base plate side. A housing side heat transporting means for transporting the generated heat to the housing portion is provided, and the heat generated from the semiconductor laser device is radiated to the outside through the base plate portion and the housing portion of the package. A semiconductor laser module characterized in that 2. The semiconductor laser module according to claim 1, wherein a heat shield means for preventing heat transfer is provided on an inner side of the housing of the package with respect to the heat transport means on the housing side of the package. .