JP2003100958A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize high-density mounting, even if a warp of a sealed body occurs. SOLUTION: The back 11a and the front 11b of a sealed body 11 are formed like curved recesses gradually deepening from their peripheral edges to the centers.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more specifically, it includes a sealing body in which a semiconductor chip is sealed, and outer leads extending from the sealing body to the outside. The present invention relates to a semiconductor device mounted on the substrate via the outer leads in a state where the back surface of the body is opposed to the substrate and a gap is secured between them.

[0002]

2. Description of the Related Art FIG. 10 shows a mounted state of a semiconductor device of this type. The semiconductor device shown here is configured to include a sealing body 1 and an outer lead 2 extending from the sealing body 1 to the outside. The sealing body 1 includes a semiconductor chip 4 mounted on a die pad 3 of a lead frame, and a bonding wire 7 such as a gold wire connecting the bonding pad 5 of the semiconductor chip 4 and the inner lead 6.
(Hereinafter, these bonding pads 5 and inner leads 6
And a bonding portion including the bonding wire 7). The outer lead 2 is formed by continuously extending from the inner lead 6 to the outside of the sealing body 1 and then appropriately bent.

In this semiconductor device, the back surface 1a of the sealing body 1 is opposed to the substrate 8 and a gap called a standoff B is secured between the back surface 1a of the sealing body 1 and the substrate 8. Then, it is mounted on the substrate 8 through the outer leads 2 and fulfills a desired function.

[0004]

By the way, in the semiconductor device as described above, the semiconductor chip 4 mounted on the die pad 3 of the lead frame and the bonding portion are respectively placed in the cavity of the mold, and the molten resin is placed in the cavity. Generally, the above-mentioned sealing body 1 is configured by filling and curing.

However, the sealing body 1 thus constructed
In that case, after releasing from the mold, warping may occur due to the influence of heat shrinkage or the like. This warp deforms the sealing body 1 of the semiconductor device so that the central portion projects outward in a curved shape as compared with the peripheral portion, and for example, FIG.
As shown in (a), when it occurs toward the surface 1b side of the sealing body 1, the total height A of the sealing body 1 is increased as it is by the deformation amount Δa. On the other hand, FIG. 11 (b)
As shown in FIG. 3, when the warp occurs toward the back surface 1a side of the sealing body 1, not only the standoff B decreases by the deformation amount Δb (B−Δb), but also the sealing The back surface 1a of the stopper 1 and the substrate 8 may contact each other. In such a case, it may lead to poor contact between the outer lead 2 and the substrate 8, and therefore work such as bending the outer lead 2 to deal with it is necessary.

As a result, in the above semiconductor device, it is necessary to mount the semiconductor device on the substrate 8 in consideration of the warp in each direction. Specifically, assuming that the deformation amount Δb due to the warp of the sealing body 1 toward the back surface 1a side is 0.1 mm, a deformation margin of 0.1 mm or more is secured for the desired standoff B. I have to go. If the amount of deformation of the sealing body 1 due to the warpage toward the surface 1b is 0.1 mm, the upper surface of the sealing body 1 needs a deformation margin of 0.1 mm or more. Therefore, when these are summed up, it is necessary to secure an extra substantial mounting height from the substrate 8 of 0.2 mm (Δa + Δb) or more, which is a great obstacle to realizing high-density mounting of semiconductor devices. Becomes

The present invention has been made in view of the above circumstances, and an object of the present invention is to obtain a semiconductor device which can realize high-density mounting even when the sealing body is warped.

[0008]

In order to achieve the above object, a semiconductor device according to the present invention comprises a sealing body encapsulating a semiconductor chip, and outer leads extending from the sealing body to the outside. In a semiconductor device mounted on the substrate via the outer leads in a state in which the back surface of the sealing body is opposed to the substrate and a gap is secured between them,
It is characterized in that the distance between the back surface and the front surface of the sealing body is gradually reduced from the peripheral portion toward the central portion.

According to the present invention, since the sealing body is constructed so that the central portion is thinner than the peripheral portion, the amount of protrusion of the sealing body when warpage occurs can be suppressed as much as possible. It will be possible.

A semiconductor device according to the next invention comprises a semiconductor chip and an encapsulant encapsulating a bonding portion thereof,
Outer leads extending from the sealing body to the outside,
In the semiconductor device mounted on the substrate via the outer leads with the back surface of the sealing body facing the substrate and ensuring a gap between them, the sealing is performed at a portion inside the bonding portion. It is characterized in that the distance between the back surface and the front surface of the stopper is gradually reduced from the peripheral portion toward the central portion.

According to the present invention, since the sealing body is configured so that the central portion is thinner than the peripheral portion in the portion inward of the bonding portion, the thickness of the sealing body in the bonding portion is reduced. In a sufficiently secured state, it is possible to suppress the protrusion amount of the sealing body when warpage occurs as much as possible.

In the semiconductor device according to the next invention, in the above invention, at least one of the back surface and the front surface of the sealing body is formed in a concave shape so that a distance between the back surface and the front surface is directed toward a central portion. The feature is that it is configured to be gradually smaller.

According to the present invention, the amount of protrusion of the recessed portion of the sealing body is previously negative.

A semiconductor device according to the next invention is characterized in that, in the above-mentioned invention, at least one of a back surface and a front surface of the sealing body is formed in a curved concave shape.

According to the present invention, the depth of the concave portion increases according to the amount of deformation when warpage occurs.

A semiconductor device according to the next invention is characterized in that, in the above invention, at least one of the back surface and the front surface of the sealing body is formed in a concave shape having a flat central portion.

According to the present invention, when the sealing body is molded by the die, the portion corresponding to the central portion of the recessed portion of the sealing body in the die may be flat.

In the semiconductor device according to the next invention, in the above invention, in the case where the substrates are laminated and mounted on the substrate, at least one of the back surface and the front surface of the lower sealing body or the upper sealing body. It is characterized in that at least the back surface and the front surface of are formed in a concave shape.

According to the present invention, the amount of protrusion of the concavely formed portions of the sealing bodies laminated and mounted on each other becomes negative in advance.

According to a sixth aspect of the present invention, in the above invention, the size of the lower layer encapsulant and the size of the upper layer encapsulant are different from each other. Semiconductor device.

According to the present invention, the amount of protrusion of the concave surfaces of the sealing bodies which are stacked and mounted on each other and have different sizes is previously minus.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a semiconductor device according to the present invention will be described in detail below with reference to the accompanying drawings.

Embodiment 1. 1 is a sectional side view of a semiconductor device according to a first embodiment of the present invention. Similar to the conventional semiconductor device shown in FIG. 10, the semiconductor device 10 illustrated here is configured to include a sealing body 11 and outer leads 12 extending from the sealing body 11 to the outside.

The sealing body 11 includes a semiconductor chip 14 mounted on the die pad 13 of the lead frame, and a bonding wire 1 such as a gold wire connecting the bonding pad 15a of the semiconductor chip 14 and the inner lead 15b.
5c (hereinafter, referred to as bonding portion 15 including the bonding pad 15a, inner lead 15b, and bonding wire 15c) is a resin body.
The outer lead 12 is formed by continuously extending from the inner lead 15b to the outside of the sealing body 11 and then appropriately bent.

As is clear from FIG. 1, in the semiconductor device 10 according to the first embodiment, the back surface 11a and the front surface 11b of the sealing body 11 are each formed in a concave shape. The concave-shaped rear surface 11a and the concave surface 11b are formed in a curved shape such that the depth gradually increases from the outermost peripheral edge portion toward the central portion. Back side 1
The depths of the central portions of 1a and the surface 11b are the respective deformation amounts Δb and Δ when the sealing body 11 is actually warped.
It is set equal to or higher than a.

Also in this semiconductor device 10, as in the case of the conventional semiconductor device 10 shown in FIG. 10, the back surface 11a of the sealing body 11 is opposed to the substrate 17 and a predetermined standoff B is secured between them. In this state, it is mounted on the substrate 17 via the outer leads 12 and fulfills a desired function.

Here, according to the semiconductor device 10 of the first embodiment, as described above, the back surface 11a and the front surface 11b of the sealing body 11 are each formed in a concave shape, so that the protrusion amount of each of them is made negative in advance. Has become. Moreover,
The depths of the back surface 11a and the front surface 11b, which are respectively formed in a concave shape, are set to be larger than the deformation amounts Δb and Δa due to warpage. Therefore, for example, as shown in FIG. 2A, even when a warp occurs toward the back surface 11a side of the sealing body 11, the central portion thereof does not project downward, and thus the substrate 17 and The standoff B between them does not change.
On the other hand, as shown in FIG.
Even when the warp occurs toward the b side, the central portion thereof does not protrude upward, and the mounting height H of the semiconductor device 10 does not change. That is, the back surface 1 in which the deformation due to the warp of the sealing body 11 toward the back surface 11a is formed in a concave shape
While being offset by 1a, the surface 11b of the sealing body 11
The deformation due to the warp to the side is canceled by the concavely formed surface 11b, and the standoff B and the mounting height H of the semiconductor device 10 are not affected at all.

FIG. 3 shows a semiconductor device 10 according to the first embodiment.
It is shown for comparison with the conventional semiconductor device,
The left side is a side view showing a mounted state of the semiconductor device 10 according to the first embodiment, and the right side is a side view showing a mounted state of a conventional semiconductor device. In FIG. 3, the sealing body 11
The maximum height A between the front surface 11b (1b) and the back surface 11a (1a) of (1) and the width W of the sealing body 11 (1) are the same.

In the conventional semiconductor device shown on the right side of FIG. 3, as described above, the deformation amount Δb due to the warp toward the front surface 1b side and the deformation amount Δa due to the warp toward the back surface 1a side remain as they are. Therefore, the standoff is required by B + Δb, and the mounting height H ′ from the substrate 8 is B + Δb + A + Δa.

On the other hand, according to the semiconductor device 10 of the first embodiment, even if the warp occurs on either side of the front surface and the back surface, the deformation amounts Δb and Δa due to the respective warps are the sealing body 11. Since it does not appear as the protrusion amount of B, it is only necessary to secure B as the standoff and B + A as the mounting height H from the board 17. That is, compared to the conventional semiconductor device, the standoff can be set smaller by the amount of deformation Δb due to the warp toward the back surface 11a, and the amount of deformation Δb due to the warp toward the back surface 11a + the deformation due to the warp toward the front surface 11b side. Since the mounting height H can be reduced by the amount Δa, the board 17
However, the semiconductor devices 10 can be densely mounted.

In the first embodiment described above, both front and back surfaces of the sealing body 11 are formed in a concave shape, but it is sufficient to form at least one of them in a concave shape. That is,
When only the surface 11b is formed in a concave shape, B + Δb is required as a standoff, but since the mounting height from the board 17 is B + Δb + A, the amount of deformation due to the warpage toward the surface 11b side is larger than that of the conventional one. It is possible to set the value smaller by Δa. Similarly, when only the back surface 11a is formed in a concave shape, the total height of the sealing body 11 is A +.
Although only Δa is required, it is sufficient to secure only B as the standoff, so that the mounting height H from the board 17 is B
+ A + Δa, which can be set smaller than the conventional one by the deformation amount Δb due to the warp toward the back surface 11a.

Embodiment 2. The first embodiment described above is
At least one of the back surface and the front surface of the sealing body is formed in a curved concave shape. On the other hand, in the second embodiment described below, at least one of the back surface and the front surface of the sealing body is formed in a concave shape having a flat central portion.

FIG. 4 is a sectional side view of a semiconductor device according to a second embodiment of the present invention. The semiconductor device 20 illustrated here is similar to that of the first embodiment shown in FIG.
1 and an outer lead 22 extending from the sealing body 21 to the outside, only the shapes of the front and back surfaces of the sealing body 21 are different. That is, in the semiconductor device 20 of the second embodiment, the back surface 21a and the front surface 21b of the sealing body 21 are formed in a concave shape so that the central portions thereof are flat. These concave back surface 21a and front surface 21b
Has a gradually increasing depth toward the central portion from the outermost peripheral edge portion to the flat portion. The depths of the central portions of the back surface 21a and the front surface 21b are set to be equal to or more than the respective deformation amounts Δb and Δa when the sealing body 21 actually warps. In addition,
Since other configurations are similar to those of the first embodiment, the same reference numerals are given and detailed description thereof is omitted. Further, the back surface 21a of the sealing body 21 is opposed to the board 17 and is mounted on the board 17 via the outer leads 22 in a state where a predetermined standoff B is secured between them. Is the same as.

According to the semiconductor device 20 configured as described above, the back surface 21a and the front surface 21b of the sealing body 21 are each formed in a concave shape, so that the protruding amount of each is negative in advance. Moreover, the depths of the back surface 21a and the front surface 21b, which are respectively formed in a concave shape, are set to be larger than the deformation amounts Δb and Δa due to warpage. Therefore, even when the warp occurs toward the back surface 21a side of the sealing body 21, the central portion thereof does not project downward, and the standoff B with the substrate 17 does not change. .
On the other hand, even when the warp occurs toward the front surface 21b side of the sealing body 21, the central portion thereof does not project upward, and the mounting height H of the semiconductor device 20 does not change. That is, the deformation due to the warp of the sealing body 21 toward the back surface 21a is offset by the concave back surface 21a, while the deformation due to the warp of the sealing body 21 toward the front surface 21b side is offset by the concave surface 21b. Since the standoff B and the mounting height H of the semiconductor device 20 are not affected at all, the semiconductor device 20 can be densely mounted on the substrate 17.

Further, according to the semiconductor device 20, when the sealing body 21 is molded by a mold, a portion corresponding to the central portion of the recessed portion of the sealing body 21 in the mold is flattened. Just configure it. Therefore, the mold can be easily manufactured, and the cost of the semiconductor device 20 can be reduced.

In the second embodiment described above, both the front and back surfaces of the sealing body are formed in a concave shape. However, for the same reason as in the first embodiment, it is sufficient to form at least one in a concave shape. Is.

Embodiment 3. The first embodiment described above is
At least one of the back surface and the front surface of the sealing body is formed with a concave portion extending from the peripheral portion to the central portion. On the other hand, in the third embodiment, at least one of the back surface and the front surface of the sealing body is formed in a concave shape in a portion located inward of the bonding portion.

FIG. 5 is a sectional side view of a semiconductor device according to a third embodiment of the present invention. The semiconductor device 30 illustrated here is similar to that of the first embodiment shown in FIG.
1 and the outer lead 32 extending from the sealing body 31 to the outside, only the shapes of the front and back surfaces of the sealing body 31 are different. That is, in the semiconductor device 30 of the third embodiment, only the portions on the back surface 31a and the front surface 31b of the sealing body 31 that are inward of the bonding portion 15 are formed in a concave shape. Further, each of the central portions of the concavely formed portions is flat. These concave back surface 31a and front surface 31
In b, the depth gradually increases from the respective peripheral portions to the flat portion toward the central portion.
The depths of the central portions of the back surface 31a and the front surface 31b are the respective deformation amounts Δ when the sealing body 31 actually warps.
It is set equal to or greater than b and Δa. Since the other configurations are similar to those of the first embodiment, the same reference numerals are given and detailed description thereof is omitted. Also, the back surface 31a of the sealing body 31 is opposed to the substrate 17 and is mounted on the substrate 17 via the outer lead 32 in a state where a predetermined standoff B is secured between them. Is the same as.

According to the semiconductor device 30 configured as described above, since the back surface 31a and the front surface 31b of the sealing body 31 are each formed in a concave shape, the protrusion amount of each of them is previously minus. Moreover, the depths of the back surface 31a and the front surface 31b, which are respectively formed in the concave shape, are set to be larger than the deformation amounts Δb and Δa due to the warp. Therefore, even when warpage occurs toward the back surface 31a side of the sealing body 31, the central portion thereof does not project downward, and the standoff B between the substrate 17 and the substrate 17 does not change. .
On the other hand, even when a warp occurs toward the front surface 31b side of the sealing body 31, the central portion thereof does not project upward, and the mounting height H of the semiconductor device 30 does not change. That is, the deformation due to the warp of the sealing body 31 toward the back surface 31a is offset by the concave back surface 31a, while the deformation due to the warp of the sealing body 31 toward the front surface 31b side is offset by the concave surface 31b. Since the standoff B and the mounting height H of the semiconductor device 30 are not affected at all, the semiconductor device 30 can be densely mounted on the substrate 17.

Further, according to the above semiconductor device 30, when the sealing body 31 is molded by a die, the portion corresponding to the central portion of the concave portion of the sealing body 31 in the die is flattened. Just configure it. Therefore, the mold can be easily manufactured, and the cost of the semiconductor device 30 can be reduced.

Furthermore, according to the semiconductor device 30, since the portion inward of the bonding portion 15 is formed in a concave shape, the bonding portion 15 can be sealed with a resin having a sufficient thickness. , Bonding part 1
5. In particular, it is possible to more effectively prevent the influence of temperature, humidity, shock, and pressure on the bonding wire 15c.

In the third embodiment described above, both the front and back surfaces of the sealing body are formed in a concave shape, but for the same reason as in the first embodiment, it is sufficient to form at least one in a concave shape. Is.

Fourth Embodiment 6 is a side view showing a stacked mounting state of a semiconductor device according to a fourth embodiment of the present invention. The semiconductor devices 40 and 50 illustrated here are the substrate 1
7 are laminated and mounted on each other, and each of them is provided with sealing bodies 41, 51 and outer leads 42, 52 extending from the sealing bodies 41, 51 to the outside.

Regarding the respective sealing bodies 41, 51 of the semiconductor device mounted on the lower layer (hereinafter, simply referred to as the lower layer semiconductor device 50) and the semiconductor device mounted on the upper layer (hereinafter, simply referred to as the upper layer semiconductor device 40). The configuration is similar to that of the first embodiment shown in FIG. That is, the sealing body of the lower layer semiconductor device 50 (hereinafter simply referred to as the lower layer sealing body 51) and the sealing body of the upper layer semiconductor device 40 (hereinafter simply referred to as the upper layer sealing body 41) have the same size (width, width,
Length, height), and the individual back surfaces 51a, 41
a and the surfaces 51b and 41b are each formed in a concave shape. These concave back surfaces 51a and 41a and the front surface 51
Each of b and 41b is formed in a curved shape such that the depth gradually increases from the outermost peripheral edge portion toward the central portion. Back surface 51a, 41a and front surface 51b, 4
The depth of the central portion of 1b is set to be equal to or more than the respective deformation amounts Δb and Δa when the sealing bodies 51 and 41 actually warp.

The outer leads of the lower-layer semiconductor device 50 (hereinafter simply referred to as the lower-layer outer leads 52) and the outer leads of the upper-layer semiconductor device 40 (hereinafter simply referred to as the upper-layer outer leads 42) have the above-mentioned lower-layer sealing when mounted on the substrate 17. A predetermined standoff B is secured between the back surface 51a of the stopper 51 and the substrate 17, and the front surface 51b of the lower layer sealing body 51 and the back surface 41a of the upper layer sealing body 41 are secured.
The length and shape of each of the lower layer sealing body 51 and the upper layer sealing body 41 are appropriately adjusted so that the lower layer sealing body 51 and the upper layer sealing body 41 are in a laminated state with each other with a predetermined separation distance C secured therebetween.

According to the lower layer semiconductor device 50 and the upper layer semiconductor device 40, which are stacked and mounted as described above, the surfaces 51b, 4 of the lower layer sealing body 51 and the upper layer sealing body 41 are formed.
1b and the back surfaces 51a and 41a are each formed in a concave shape, so that the protrusion amount of each of them is previously minus. Moreover, the back surface 51 formed in each concave shape
The depths of a and 41a and the surfaces 51b and 41b are set to be larger than the deformation amounts Δb and Δa due to warpage. Therefore, even when warpage occurs toward the rear surfaces 51a and 41a of the lower layer sealing body 51, the central portion thereof does not project downward, and the standoff B between the substrate 17 changes. There is no such thing. On the other hand, the surface 51 of the lower layer sealing body 51
warpage occurs toward the b and 41b sides, and the upper layer sealing body 4
Even when a warp occurs toward the back surface 41a side of No. 1, the individual central portions do not project, and the separation distance C between the front surface 51b of the lower layer sealing body 51 and the back surface 41a of the upper layer sealing body 41 is
Does not change. Further, even when a warp occurs toward the front surface 41b side of the upper layer sealing body 41, the central portion thereof does not project upward, and the upper layer semiconductor device 4
The mounting height H of 0 does not change. That is, the back surfaces 51a and 41a of the lower layer sealing body 51 and the upper layer sealing body 41, respectively.
The back surface 5 formed in a concave shape by the warp to the side
While being offset by 1a and 41a, the lower layer sealing body 51
And the surfaces 51b and 4 of the upper layer sealing body 41, which are formed in a concave shape by the warp toward the respective surfaces 51b and 41b.
1b, which is offset by the lower layer semiconductor device 5
The standoff of 0, the separation distance C between the lower layer semiconductor device 50 and the upper layer semiconductor device 40, and the mounting height H of the upper layer semiconductor device 40 are not affected at all.

FIG. 7 shows a semiconductor device 5 according to the fourth embodiment.
0 and 40 are shown for comparison with the conventional semiconductor device, and the left side is the semiconductor device 50 or 4 according to the fourth embodiment.
0 is a side view showing a stacked mounting state of 0, and the right side is a side view showing a stacked mounting state of a conventional semiconductor device. In addition, this FIG.
, The surfaces 51b, 4 of the respective sealing bodies 51, 41, 1
1b and 1b and the maximum height A between the back surfaces 51a, 41a and 1a and the width W of each sealing body 51, 41 and 1 are the same.

First, in the stacked mounting state of the conventional semiconductor device shown on the right side in FIG. 7, the deformation amount Δb due to the warp toward the front surface 1b side and the deformation amount Δa due to the warp toward the back surface 1a side of each sealing body 1 are: Since the protrusion amount of the sealing body 1 is as it is, the standoff is required by B + Δb, and the separation distance between the lower layer sealing body 1 and the upper layer sealing body 1 is C + Δa.
Only + Δb is required, and the mounting height H ′ from the substrate 8 is B + Δb + A + Δa + Δb + A + Δa.

On the other hand, according to the stacked mounting state of the semiconductor devices 50 and 40 of the fourth embodiment, even when the warp occurs on either side of the front and back, the deformation amount Δb due to each warp, Since Δa does not appear as the protrusion amount of the sealing bodies 51 and 41, only B needs to be secured as the standoff, and only C can be secured as the separation distance between the lower layer sealing body 51 and the upper layer sealing body 41. As the mounting height H from the board 17, only B + A + C + A may be secured.
That is, the standoff can be set smaller than the conventional stacked mounting state of the semiconductor device by the deformation amount Δb due to the warp toward the back surface 51a, and the deformation amount Δb due to the warp toward the back surface 41a + the surface 51b side. The separation distance can be reduced by the amount of deformation Δa due to the warp, and the amount of deformation Δb × 2 due to the warp toward the back surfaces 51a and 41a + the amount of deformation Δa × 2 due to the warp toward the front surfaces 51b and 41b can be mounted. Since the height H can be reduced, the semiconductor devices 50 and 40 can be densely mounted on the substrate 17.

In the fourth embodiment described above, both the front and back surfaces of the lower layer sealing body and the upper layer sealing body are formed in a concave shape, but the present invention is not limited to this, and at least one of the sealing layers is sealed. It is sufficient to form at least one of the back surface and the front surface of the body in a concave shape.

In the fourth embodiment described above, the curved concave back surface and / or front surface is formed with respect to the sealing body, but the concave shape is formed so that the central portion is flat. I don't mind.

Further, in the fourth embodiment described above, the portion from the peripheral portion of the back surface and / or the front surface to the central portion is formed in a concave shape with respect to the sealing body, but it is located inside the bonding portion. The portion may be formed in a concave shape.

Furthermore, in the above-mentioned fourth embodiment,
Two semiconductor devices are stacked and mounted, but 3
The same can be applied to the case where the above semiconductor devices are stacked and mounted.

Embodiment 5. The fourth embodiment described above is
The semiconductor devices of the same size are stacked and mounted. On the other hand, in the fifth embodiment, semiconductor devices having different sizes are stacked and mounted.

FIG. 8 is a side view showing a stacked mounting state of the semiconductor device according to the fifth embodiment of the present invention. The semiconductor devices 60 and 70 illustrated here are laminated and mounted on the substrate 17, and are respectively sealed bodies 61 and 71.
And outer leads 62, 72 extending from the sealing bodies 61, 71 to the outside.
Only the size of 1 is different. That is, in the fifth embodiment, the width of the lower layer sealing body 71 of the lower layer semiconductor device 70 is smaller than that of the upper layer sealing body 61 of the upper layer semiconductor device 60. The configuration of upper layer semiconductor device 60 is similar to that of the fourth embodiment. The upper layer encapsulant 61 and the lower layer encapsulant 71 have individual back surfaces 61a, 71a and front surface 61
b and 71b are each formed in a concave shape. The recessed front surfaces 61b, 71b and the back surfaces 61a, 71a have gradually increasing depths toward the central portion between the outermost peripheral edge portion and the central portion. The depths of the central portions of the front surfaces 61b, 71b and the back surfaces 61a, 71a are set to be equal to or more than the respective deformation amounts Δa, Δa ', Δb, Δb' when the sealing bodies 61, 71 are actually warped. I am doing it. Since the other configurations are similar to those of the fourth embodiment, the same reference numerals are given and detailed description thereof is omitted. Further, a predetermined standoff B is secured between the back surface 71a of the lower layer sealing body 71 and the substrate 17, and a predetermined standoff B is provided between the front surface 71b of the lower layer sealing body 71 and the back surface 61a of the upper layer sealing body 61. It is similar to the fourth embodiment that they are stacked and mounted on the substrate 17 via the respective outer leads 62 and 72 while keeping the separation distance C.

According to the lower layer semiconductor device 70 and the upper layer semiconductor device 60 which are stacked and mounted as described above, the surfaces 71b, 6 of the lower layer encapsulant 71 and the upper layer encapsulant 61 are formed.
1b and the respective back surfaces 71a, 61a are each formed in a concave shape, so that the respective protrusion amounts are negative in advance. Moreover, the back surface 71 formed in each concave shape
The depths of a and 61a and the surfaces 71b and 61b are set to be larger than the deformation amounts Δb, Δb ′, Δa, and Δa ′ due to warpage. Therefore, even if a warp occurs toward the back surface 71a side of the lower layer sealing body 71, the center portion thereof does not project downward, and the standoff B between the substrate 17 and the substrate 17 does not change. Absent. On the other hand, even when the warp occurs toward the front surface 71b side of the lower layer sealing body 71 and the warp occurs toward the back surface 61a side of the upper layer sealing body 61, the individual central portions do not project. , Surface 7 of lower layer sealing body 71
The separation distance C between 1b and the back surface 61a of the upper layer sealing body 61 does not change. Further, the surface 61 of the upper layer sealing body 61
Even when the warp occurs toward the b side, the central portion thereof does not project upward, and the mounting height H of the upper layer semiconductor device 60 does not change. That is, the back surface 71 in which the lower layer sealing body 71 and the upper layer sealing body 61 are respectively deformed by warpage toward the back surfaces 71a and 61a to form a concave shape.
While being offset by a and 61a, the surfaces 71b and 61 of the lower layer sealing body 71 and the upper layer sealing body 61, which are deformed by warpage toward the respective surfaces 71b and 61b, are formed in a concave shape.
b, and the lower semiconductor device 70
There is no influence on the standoff B, the separation distance C between the lower layer semiconductor device 70 and the upper layer semiconductor device 60, and the mounting height H of the upper layer semiconductor device 60.

FIG. 9 shows a semiconductor device 6 according to the fifth embodiment.
0 and 70 are shown for comparison with the conventional semiconductor device, and the left side is the semiconductor device 60 or 7 according to the fifth embodiment.
0 is a side view showing a stacked mounting state of 0, and the right side is a side view showing a stacked mounting state of a conventional semiconductor device. In addition, this FIG.
, The surface 71 of each sealing body 61, 71, 1, 1 '
b, 61b, 1b, 1b 'and back surfaces 71a, 61a, 1
maximum height A between a and 1a ', and each upper layer sealing body 6
The width W of 1, 1 and the width W'of each lower layer sealing body 71, 1'are the same.

First, in the stacked mounting state of the conventional semiconductor device shown on the right side in FIG. 9, the deformation amounts Δb, Δ due to the warpage of the respective sealing bodies 1, 1 ′ toward the front surface 1 b, 1 b ′ side.
b ′ and the amount of deformation Δ due to warpage toward the back surface 1a, 1a ′
Since a and Δa ′ are the projection amounts of the sealing bodies 1 and 1 ′ as they are, a standoff of B + Δb ′ is required and a separation distance between the lower layer sealing body 1 ′ and the upper layer sealing body 1 is C + Δ.
Only a ′ + Δb is required, and the mounting height H ′ from the substrate 8 is B + Δb ′ + A + Δa ′ + Δb + A + Δa.

On the other hand, according to the stacked mounting state of the semiconductor devices 60 and 70 of the fifth embodiment, even if the warp occurs on either side of the front and back, the deformation amount Δb due to each warp, Δb ′, Δa, and Δa ′ are the sealing bodies 61,
Since it does not appear as the protrusion amount of 71, it is sufficient to secure only B as a standoff, and it is sufficient to secure only C as a separation distance between the lower layer sealing body 71 and the upper layer sealing body 61. It is sufficient to secure only B + A + C + A as H. That is, as compared with the conventional stacked mounting state of the semiconductor device, the standoff can be set smaller by the amount of deformation Δb ′ due to the warp of the lower layer encapsulant 71 toward the rear surface 71a, and the rear surface of the upper layer encapsulant 61 can be reduced. 61a
Deformation amount Δb due to warpage to the side + surface 7 of the lower layer sealing body 71
The separation distance can be reduced by the deformation amount Δa ′ due to the warp toward the 1b side, and the back surface 71 of the lower layer sealing body 71 can be further reduced.
Deformation amount Δb ′ due to warpage toward side a + Deformation amount Δa ′ due to warpage toward surface 71b side of lower layer sealing body 71 + upper layer sealing body 6
Since the mounting height H can be reduced by the amount of deformation Δb due to the warp of the No. 1 toward the back surface 61a + the amount of deformation Δa due to the warp of the upper layer sealing body 61 toward the front surface 61b, the substrate 17 can be made smaller.
On the other hand, the semiconductor devices 60 and 70 can be densely mounted.

In the fifth embodiment described above, both the front and back surfaces of the lower layer encapsulant and the upper layer encapsulant are formed in a concave shape, but the present invention is not limited to this, and at least one of the encapsulants is sealed. It is sufficient to form at least one of the back surface and the front surface of the body in a concave shape.

In the fifth embodiment described above, the curved back surface and / or front surface is formed with respect to the sealing body. However, the back surface and / or the front surface are formed so as to have a flat central portion. I don't mind.

Further, in the fifth embodiment described above, the portion from the peripheral portion of the back surface and / or the front surface to the central portion is formed in a concave shape with respect to the sealing body, but it is located inside the bonding portion. The portion may be formed in a concave shape.

Furthermore, in the above described fifth embodiment,
Two semiconductor devices are stacked and mounted, but 3
The same can be applied to the case where the above semiconductor devices are stacked and mounted.

In each of the above-described first to fifth embodiments, the depth of the concavely formed portion of the sealing body is set to be equal to or more than the deformation amount due to each warp, but these are not always required. The value is not limited to the value and may be equal to or less than the amount of deformation due to warpage.

[0065]

As described above, according to the present invention, since the sealing body is configured so that the central portion is thinner than the peripheral portion, the protruding amount of the sealing body when warpage occurs Can be suppressed as much as possible. Therefore, the mounting height and / or the standoff dimension of the semiconductor device when mounted on the substrate can be set small, and high-density mounting can be realized.

According to the next invention, since the sealing body is configured so that the central portion is thinner than the peripheral portion in the portion inward of the bonding portion, the thickness of the sealing body in the bonding portion is large. With the above sufficiently secured, the amount of protrusion of the sealing body when warpage occurs can be suppressed as much as possible. Therefore, it becomes possible to set the mounting height and / or the standoff dimension of the semiconductor device when mounted on the substrate to be small while more effectively preventing the influence of temperature, humidity, shock, and pressure on the bonding portion. High-density packaging can be realized.

According to the next invention, the amount of protrusion of the concavely formed portion of the sealing body becomes negative in advance, so that the amount of protrusion of the sealing body due to warpage becomes smaller, and the semiconductor device when mounted on a substrate is reduced. It is possible to set the mounting height and / or the standoff of the device even smaller.

According to the next invention, since the depth of the concavely formed portion increases depending on the amount of deformation when warpage occurs, the concavely formed portion and the deformation due to the warpage can be offset. It becomes possible and higher density mounting becomes possible.

According to the next invention, when the sealing body is molded by the mold, the portion corresponding to the central portion of the recessed portion of the sealing body in the mold may be flat. It becomes possible to easily manufacture the mold.

According to the next invention, since the protrusion amount of the concavely formed portions in the sealing bodies stacked and mounted on each other becomes negative in advance, the mounting height of the semiconductor devices stacked and / or the sealing bodies are mutually different. It is possible to achieve high-density mounting by setting the separation distance and / or the standoff small.

According to the next invention, since the amount of protrusion of the concavely formed surfaces of the sealing bodies having different sizes mounted in layers is previously negative, the mounting heights and // Alternatively, it is possible to achieve high-density mounting by setting the mutual separation distance and / or standoff of the sealing bodies to be small.

[Brief description of drawings]

FIG. 1 is a sectional side view showing a mounted state of a semiconductor device according to a first embodiment of the present invention.

2A and 2B show a state where warpage occurs in the sealing body of the semiconductor device shown in FIG. 1, and FIG. 2A is a side view showing a state where the semiconductor body warps toward the back surface side of the sealing body; FIG. 6 is a side view showing a state in which the surface of the sealing body is warped.

FIG. 3 is a comparison of the semiconductor device shown in FIG. 1 and a conventional semiconductor device. The left side is a side view showing the mounted state of the semiconductor device shown in FIG. 1, and the right side is a mounted state of the conventional semiconductor device. It is a side view shown.

FIG. 4 is a sectional side view of a semiconductor device which is Embodiment 2 of the present invention.

FIG. 5 is a sectional side view of a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a side view showing a stacked mounting state of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is shown for comparison between the semiconductor device shown in FIG. 6 and a conventional semiconductor device, and the left side shows a fourth embodiment.
Is a side view showing the stacked mounting state of the semiconductor device, and the right side is a side view showing the stacked mounting state of the conventional semiconductor device.

FIG. 8 is a side view showing a stacked mounting state of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 9 is shown to compare the semiconductor device shown in FIG. 8 with a conventional semiconductor device, and the left side shows a fifth embodiment.
Is a side view showing the stacked mounting state of the semiconductor device, and the right side is a side view showing the stacked mounting state of the conventional semiconductor device.

FIG. 10 is a cross-sectional side view showing a conventional semiconductor device.

11A and 11B show a state in which a conventional semiconductor device has a warped sealing body, in which FIG. 11A is a side view showing a state where the sealing body is warped toward the back surface side, and FIG. It is a side view which shows the state which curved toward the surface side of the body.

[Explanation of symbols]

10 semiconductor device, 11 sealing body, 11a back surface, 11
b surface, 12 outer leads, 13 die pad, 1
4 semiconductor chips, 15 bonding parts, 15a bonding pads, 15b inner leads, 15c bonding wires, 17 substrates, 20 semiconductor devices, 2
DESCRIPTION OF SYMBOLS 1 sealed body, 21a back surface, 21b front surface, 22 outer lead, 30 semiconductor device, 31 sealed body, 31a
Back surface, 31b front surface, 32 outer lead, 40 upper layer semiconductor device, 41 upper layer sealing body, 41a back surface, 41b
Surface, 42 upper layer outer lead, 50 lower layer semiconductor device, 51 lower layer sealing body, 51a rear surface, 51b front surface,
52 lower layer outer lead, 60 upper layer semiconductor device, 61
Upper layer sealing body, 61a back surface, 61b front surface, 62 outer lead, 70 lower layer semiconductor device, 71 lower layer sealing body,
71a back surface, 71b front surface, 72 outer lead.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hiroshi Fujimoto             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. F-term (reference) 4M109 AA01 BA01 CA21 DA03 GA10

Claims (7)

[Claims] 1. An encapsulating body encapsulating a semiconductor chip and an outer lead extending from the encapsulating body to the outside, wherein the back surface of the encapsulating body faces the substrate and a gap is secured between them. In the semiconductor device mounted on the substrate via the outer leads in the above state, the distance between the back surface and the front surface of the sealing body is gradually reduced from the peripheral portion toward the central portion. apparatus. 2. A sealing body, which seals a semiconductor chip and a bonding portion thereof, and an outer lead, which extends from the sealing body to the outside, wherein the back surface of the sealing body faces the substrate and is provided between them. In a semiconductor device mounted on the substrate via the outer leads in a state in which a gap is secured, the distance between the back surface and the front surface of the sealing body at a portion inward of the bonding portion is set from a peripheral portion. A semiconductor device, which is configured to be gradually smaller toward a central portion. 3. The back surface and the front surface of the sealing body are formed in a concave shape so that the distance between the back surface and the front surface is gradually reduced toward the central portion. Alternatively, the semiconductor device according to item 2. 4. The semiconductor device according to claim 3, wherein at least one of a back surface and a front surface of the sealing body is formed in a curved concave shape. 5. The semiconductor device according to claim 3, wherein at least one of a back surface and a front surface of the sealing body is formed in a concave shape having a flat central portion. 6. When they are stacked and mounted on a substrate, at least one of a back surface and a front surface of a lower layer sealing body or at least a back surface and a front surface of an upper layer sealing body are formed in a concave shape. 6. The method according to claim 3, wherein
The semiconductor device according to any one of 1. 7. The semiconductor device according to claim 6, wherein the size of the lower layer encapsulant and the size of the upper layer encapsulant are different from each other.