JP2003100946A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-density packaging-type semiconductor device. SOLUTION: The method of manufacturing a semiconductor device includes a semiconductor element, an electrode that is arranged around the semiconductor element, a small-gauge wire where the front of the electrode is electrically connected to the electrode of the semiconductor element, and a sealing resin were the semiconductor element, the electrode, and the small-gauge wire are sealed. The manufacturing method also includes a first metal layer that becomes the electrode, the second metal layer that is connected to the first metal layer, and a frame layer that is joined to the first metal layer via the second one. In this case, lamination foils with different etching characteristics are used at least for the second metal and frame layers.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, high density mounting of semiconductor parts such as resin-encapsulated semiconductor devices has been required, and accordingly, the miniaturization and thinning of semiconductor parts have been advanced. . In addition, the number of pins has been increased while being small and thin, and a high density, small and thin resin-sealed semiconductor device has been demanded.

As a semiconductor device satisfying the above demand, there is a surface mounting type semiconductor device. In the semiconductor device, a semiconductor element is mounted on a carrier (wiring substrate) having electrodes on the bottom surface, electrical connection is made, and then the upper surface of the carrier is resin-sealed in a ball grid array (a semiconductor device). BGA type and land grid array (LG)
It is a semiconductor device of type A). This type of semiconductor device is a semiconductor device that is mounted on the bottom surface side with a mother substrate, and such surface mounting type semiconductor devices are becoming mainstream in the future.

FIG. 6 shows a conventional method for manufacturing the semiconductor device.
Shown in. (1) a step of preparing a frame body 12 made of a conductive plate material; and (2) a plurality of electrodes 4 protruding from the frame body 12 into the frame body surface by half etching.
And a step of forming the element housing portion 5 surrounded by the electrode 4 to form the frame member 13, and (3) fixing the semiconductor element 6 to the element housing portion 5 of the prepared frame member 13. And (4) electrically connecting the fixed electrode of the semiconductor element 6 and the upper surface of the electrode 4 with a thin metal wire 8, and (5) fixing the semiconductor element 6 to the thin metal wire 8 A step of sealing the upper surface side of the frame member connected by the above with the sealing resin 9, and (6) the frame member on the bottom surface of the frame member after resin sealing is ground by a grinding member, This is a method of manufacturing a semiconductor device, which comprises the steps of removing the bottom surface, separating the electrode 4 to form an isolated electrode 4, and exposing the bottom surface of the electrode 4 and the bottom surface of the semiconductor element 6 from a resin.

[0005]

In the conventional method of manufacturing a semiconductor device, electrodes are formed on the frame body by half etching. However, half etching is performed on a member formed of only one kind of metal. By controlling the thickness, the etching is terminated in the middle of the member,
The target electrode is formed. In this method, since the etching is finished in the middle of the member, the bottom surface formed between the electrodes necessarily has a rounded shape, and it is difficult to flatten it. Considering the mounting of semiconductor elements and the narrowing of the pitch of electrodes, it is preferable that the bottom surface formed between the electrodes has a less rounded shape, but the conventional method has a rounded shape, so the pitch between electrodes is narrowed. Is difficult, and it is also difficult to make the etching depth uniform. In addition, since the frame main body on the bottom surface of the frame member after resin sealing is ground by the grinding member to remove the frame main body on the bottom surface, it takes time depending on the thickness of the frame to be removed.

The present invention provides a method for manufacturing a high-density mounting type semiconductor device which can cope with the above-mentioned conventional problems and future trends of the semiconductor device, and has a laminated structure having three layers, an example of which is shown in FIG. It is intended to manufacture a resin-sealed semiconductor device using a foil.

[0007]

DISCLOSURE OF THE INVENTION The present inventors have studied the problem of narrowing the pitch in half etching, the problem of grinding the bottom surface of the frame body after resin sealing, and the like, and have investigated the electrode of a resin-sealed semiconductor device. It has been found that the flatness of the bottom surface between the electrodes, the narrowing of the pitch of the electrodes, the uniformization of the etching depth, and the grinding time can be greatly improved by adopting the structure of a laminated foil having three layers as a material for manufacturing Arrived

That is, according to the present invention, a semiconductor element, an electrode arranged around the semiconductor element, a thin wire electrically connecting a surface of the electrode and an electrode of the semiconductor element, the semiconductor element and the electrode A method of manufacturing a semiconductor device, comprising: a sealing resin that seals a thin wire, wherein a first metal layer to be the electrode, a second metal layer continuous with the first metal layer, and the first metal layer Using a laminated foil having three layers of a frame layer joined to the first metal layer via the second metal layer, at least the second metal layer and the frame layer having different etching characteristics, (1) A step of forming an element accommodating portion for accommodating the electrode and the semiconductor element by etching a first metal layer to be an electrode, and (2) a step of removing the second metal layer not in contact with the electrode by etching, 3) Fix the semiconductor device in the device housing A degree, and (4) using said fine wire and a semiconductor element and an electrode, electrically connecting step,
(5) A method of manufacturing a semiconductor device, comprising: (6) removing the frame layer after a step of sealing the semiconductor element, the electrode, and the thin wire with a sealing resin.

The semiconductor element, an electrode arranged around the semiconductor element, a thin wire electrically connecting the surface of the electrode and the electrode of the semiconductor element, and the semiconductor element, the electrode and the thin wire. A method of manufacturing a semiconductor device having a sealed sealing resin, the first metal layer serving as the electrode, a second metal layer continuous with the first metal layer, and the second metal Using a laminated foil having three layers of a frame layer joined to the first metal layer through layers, and at least the first metal layer and the second metal layer having different etching characteristics, (1)
A step of forming an element accommodating portion for accommodating the electrode and the semiconductor element by etching the first metal layer to be the electrode; (2) a step of fixing a semiconductor element in the element accommodating portion; and (3) the semiconductor Electrically connecting the element and the electrode using a thin wire, and (4) the semiconductor element, the electrode,
A method of manufacturing a semiconductor device, which comprises a step of sealing a thin wire with a sealing resin and (5) a step of removing the frame layer, and then (6) removing a second metal layer to expose an electrode.

The removal of the second metal layer is preferably performed by grinding or etching. Further, the frame layer is preferably removed by etching or peeling. In addition, the exposed electrode is preferably plated, and the second metal layer is preferably a dry film-forming layer.

[0011]

1 shows an example of a semiconductor device manufactured by the present invention. The semiconductor device obtained by the present invention electrically includes a semiconductor element 6, an electrode 4 arranged around the semiconductor element 6, an electrode pad (not shown) on the surface of the electrode 4 and the surface of the semiconductor element 6. Thin metal wire 8 connected to
And a semiconductor element 6, an electrode 4, and a thin metal wire 8 are sealed with a sealing resin 9 to provide a fat-sealed semiconductor device. 1A is a sectional view, FIG. 1B is a plan view, and FIG.
(C) is a bottom view. The cross section of FIG. 1 (a) shows the cross section of the AA1 portion of FIG. 1 (b) and the A′-A1 ′ portion of FIG. 1 (c).

An important feature of the present invention is that, as a material for manufacturing an electrode or the like of a resin-encapsulated semiconductor device, a first metal layer to be an electrode and a second metal layer continuously formed on the first metal layer. This is because it has three layers of a metal layer and a frame layer, and the second metal layer is a laminated foil having different etching characteristics from at least one of the first metal layer and the frame layer. In the present invention, the manufacturing method differs as described below, depending on whether the etching characteristics of the second metal layer are different from the etching characteristics of the first metal layer or the frame layer.

First, the first aspect of the present invention in which the second metal layer uses a laminated foil having a different etching characteristic from the frame layer will be described. The electrodes and the element housing of the semiconductor device are formed by etching two layers of a first metal layer and a second metal layer. Here, when the second metal layer having different etching characteristics from the first metal layer is used, different etching steps are required. When the etching characteristics of both layers are the same, the first and second metal layers can be etched in one etching step, leaving only the frame layer. Therefore, from the viewpoint of productivity, it is preferable that the first metal layer and the second metal layer have the same etching characteristics.

In any case, since it is possible to prevent the etching from reaching the frame layer in the etching process for forming the electrodes of the semiconductor device, it is possible for the first time to change from the conventional half etching to full etching. . As a result, the bottom face formed between the electrodes does not have a rounded shape, and the pitch of the electrodes can be narrowed. Since the etching depth is also determined by the thicknesses of the first and second metal layers, it is possible to always achieve a uniform etching depth.

The change from half etching to full etching is possible as long as the laminated foil has at least two layers having different etching characteristics, but the laminated foil used in the present invention has a structure having three layers. The reason is that the laminated foil is easier to manufacture than the two-layer laminated foil and is easily available. Specifically, for example, in the manufacturing process of the laminated foil, the second metal layer, the first metal layer forming the electrode,
It can be used as a bonding layer for bonding with a frame layer for improving handleability.

After forming the electrodes and the like by the above etching, the semiconductor element is fixed to the element housing portion on the frame layer, the semiconductor element and the electrode are electrically connected, the semiconductor element and the like are sealed with resin, and the frame layer is removed. To do. The present invention has an advantage over the conventional manufacturing method even when the frame layer is removed.

In the conventional manufacturing method, the step for the same purpose as the removal of the frame layer in the present invention is carried out in the form of grinding the bottom of the frame main body which is carried out after resin sealing of the electrodes as described above. This method has a problem that productivity is poor because a part of the frame member which is originally integrated is removed by grinding. On the other hand, in the present invention, since the removal is performed by removing the frame layer which is a separate member that is originally joined, the removal is easier than the conventional method, and the productivity can be improved. In the present invention, it is particularly preferable to remove the frame layer by etching or peeling from the viewpoint of improving productivity. Note that when the frame layer is removed by peeling, the frame layer may remain on the second metal layer, but this can also be removed by etching separately.

Next, the second aspect of the present invention will be described in which the second metal layer uses a laminated foil having etching characteristics different from those of the first metal layer. The electrodes and the element housing of the semiconductor device are formed by etching the first metal layer while leaving the second metal layer. As a result, it is possible to prevent the etching from reaching the frame layer, so that it is possible to change from half etching to full etching. As a result, the bottom face formed between the electrodes does not have a rounded shape, and the pitch of the electrodes can be narrowed. The etching depth is also determined by the thickness of the first metal layer, so that a uniform etching depth can always be achieved. The laminated foil used in the present invention has a structure having three layers for the same reason as described above.

After forming electrodes and the like by the above etching, a semiconductor element is fixed to the element housing portion on the second metal layer,
The semiconductor element and the electrode are electrically connected, the semiconductor element and the like are sealed with resin, and the frame layer is removed. Even in the present invention in which the second metal layer uses a laminated foil having different etching characteristics from the first metal layer, even when the frame layer is removed similarly to the other present invention described above, comparison with the conventional manufacturing method is performed. And have advantages. In the present invention in which the second metal layer uses a laminated foil having different etching characteristics from the first metal layer, a step of removing the exposed portion of the second metal layer is required after removing the frame layer. . In this case, the exposed portion of the second metal layer can be easily removed by grinding or etching because the second metal layer has an extremely thin thickness. Of these, considering the environment, it is preferable to remove them by grinding which is a dry process.

As described above, in both the first invention and the second invention, the electrodes and the like can be formed by full etching, the bottom surface formed between the electrodes is flattened, and the space between the electrodes is narrowed. Pitching can be achieved. In addition, it is possible to achieve uniform etching depth and improved productivity.

In the present invention, after the frame layer is removed, the bottom surface of the electrode may be plated as shown in FIG. When joining the exposed portion of the semiconductor device electrode and the substrate wiring by using solder, by applying Ni, Au plating or the like, the diffusion speed between the metals can be made closer than directly bonding the exposed portion of the semiconductor device electrode and the solder. You can Voids (holes) generated in metals by making the diffusion speeds between metals closer
Can be prevented, and a decrease in bonding strength can be suppressed.

Next, the laminated foil having three layers used in the present invention will be described. FIG. 2 is a diagram showing a laminated foil used in the method for manufacturing a semiconductor device of this embodiment.

As shown in the figure, the laminated foil having three layers used in the manufacturing method of the present invention comprises a first metal layer 1 which forms an electrode and a semiconductor element accommodating portion by etching, a first metal layer 1 and a frame layer. The third metal layer 2 has an etching characteristic different from that of at least one of the third metal layers 3, and the frame layer 3 is joined to the first metal layer via the second metal layer 2.
Here, the second metal layer referred to in the present invention may be one having an action as a joining layer, and one having a joining layer composed of two or more layers having different compositions and the like is the second term referred to in the present invention. Included in the metal layer. The frame layer 3 increases the rigidity of the laminated foil and facilitates handling during manufacturing of a series of semiconductor devices.

The laminated foil having the three layers can be manufactured by, for example, a plating method, a surface activation bonding method, a vapor deposition roll bonding or the like. These methods will be briefly described below.

The plating method is a method of producing a laminated foil having three layers by applying a second metal layer plating on the frame layer and further applying a first metal layer plating on the second metal layer.

In the surface activated bonding method, a second metal layer is plated on the frame layer, and the bonding surface and the bonding surface of the first metal layer are subjected to ion etching in a vacuum chamber and bonded by a rolling mill. Is a method for producing a laminated foil having three layers.

In the vapor deposition roll bonding method, a second metal layer is formed as a dry film-forming layer on the surfaces of the first metal layer and the frame layer on the bonding side by a dry film-forming method such as a vacuum vapor deposition method, and then the same. This is a method for producing a laminated foil having three layers by stacking and rolling-bonding in a vacuum chamber. The dry film forming method includes not only the above-mentioned vacuum vapor deposition method but also physical vapor deposition, chemical vapor deposition, and other dry film forming methods using a vapor phase or plasma.

Among these methods, as a method for producing the laminated foil of the present invention, there is a vapor deposition roll joining method for joining the first metal layer and the frame layer with the second metal layer which is a dry film-forming layer. preferable. In the vapor deposition roll joining method, the step of forming the second metal layer, which is a dry film forming layer, and the joining step can be continuously performed in one step, and the productivity can be dramatically improved. Also, due to the dry process, consideration for the environment is made.

In the present invention, the thickness of the first metal layer is from 35 to 150 from the viewpoint of forming the electrode and the semiconductor element accommodating portion.
It is preferably [μm]. The thickness of the second metal layer is preferably as thin as possible while maintaining the bonding strength between the first metal layer and the frame layer and the etching barrier property, and specifically 0.01 to 5 It is preferably [μm]. The thickness of the frame layer is preferably 18 to 150 [μm] in consideration of the rigidity required for handling. In the future, it is expected that the electrodes and the semiconductor element accommodating portion will be made thinner by making the semiconductor device lighter, thinner and shorter.
Even in this case, the present invention can cope with the first metal layer having a thickness of 35 [μm] or less and 150 [μm] or more as long as there is no problem such as strength of the material used for each layer. Also, the thickness of the frame layer is 18 [μm] or less, 150 [μm]
m] or more can be dealt with.

The metal used for the first metal layer is for forming an electrode and needs to have a low resistance. Therefore, it is preferable to use Cu, Ag, Al or the like. Most preferred of these is Cu. Cu has a low cost and is excellent in conductivity and etching property. The metal used for the second metal layer is preferably Cu, Ag, Ti, Sn, Ni or Al in consideration of the bondability and the etching property. Of these, the second metal layer is particularly preferably Ni, Ti, or Sn. With respect to Ni, after the frame layer is removed, the plating treatment applied to the electrode exposed portion may be only Au plating. Ti is easy to peel off when the frame layer is removed by peeling. Sn has low hardness and is excellent in moldability. Most preferable is Ti in view of productivity.

Further, in order to improve the handleability, general metals and resins can be used for the frame layer, but since they are exposed to high temperatures in the resin sealing step, it is preferable to use metals having heat resistance. preferable. More preferably, the first metal layer and the etching solution can be the same Cu
Is.

From the above, the laminated foil having three layers which is particularly preferable in the present invention is Cu-Ti-Cu laminated foil or Cu-Ti-Cu.
Cu-Al laminated foil and the like. The Cu-Ti-Cu laminated foil is an example in which the second metal layer has different etching characteristics from both the first metal layer and the frame layer.
The laminated foil is an example in which the etching characteristics differ only in the second metal layer and the frame layer.

A method of manufacturing a semiconductor device of the present invention will be specifically described below with reference to the drawings. 3 and 4 show an example of the present invention in which materials having different etching characteristics are used for the second metal layer and the frame layer, and an example of the present invention in which the electrodes are plated after the frame layer is removed. .

First, as shown in FIG. 3 (1), a laminated foil having three layers is used to etch the first metal layer to provide a plurality of electrodes 4 and the electrodes so as to be surrounded by these electrodes 4. And the element storage portion 5 thus formed. When a second metal layer having a different etching characteristic from the first metal layer is used, the etching is blocked by the second metal layer 2 and only the first metal layer 1 is etched. When the first metal layer and the second metal layer are metal layers having the same etching characteristics, both metal layers can be removed by one-step etching.

When a metal layer having different etching characteristics is used for the first metal layer and the second metal layer, as shown in FIG.
As shown in, the second metal layer 2 is removed by etching so as to be continuous with the electrode 4. In any of the above etching steps, since the etching characteristics of the second metal layer 2 are different from those of the frame layer 3, full etching can be performed with the frame layer left, and the bottom surface between the electrodes formed by etching is not rounded. It becomes smooth.

Next, as shown in FIG. 3C, the semiconductor element 6 is adhered and fixed to the element accommodating portion 5 formed between the electrodes 4 by etching with the adhesive 7. The adhesive 7 used here may be a conductive or insulating adhesive,
Any adhesive may be used as long as it can securely fix the semiconductor element 6 and has a thermal expansion coefficient close to that of the semiconductor element 6.

Next, as shown in FIG. 3 (4), the electrodes (not shown) on the surface of the mounted semiconductor element 6 and the upper surface of each electrode 4 are electrically connected by the thin metal wires 8. In the connection by the thin metal wire 8, the loop height is connected so as to be as low as possible. In addition, as the metal fine wire 8 to be used, in general, a metal fine wire such as a gold (Au) wire and an aluminum (Al) wire used in wire bonding, a conductive wire made of resin,
A metal thin wire whose surface is coated with an insulating material may be used so that the contact between the metal thin wires is not affected. In particular, by using a metal thin wire coated with an insulation coating, it is possible to eliminate the short circuit due to the contact between the metal thin wires and the influence of the contact to the end portion of the electrode and the end portion of the semiconductor element, so that the wiring can be performed in a low loop.

Next, as shown in FIG. 3 (5), the semiconductor element 6, the electrode 4 and the like are sealed with a sealing resin 9. In this one-sided sealing, the top of the thin metal wire connected with a low loop is covered,
In addition, it is preferable that the semiconductor element 6 is sealed with a thin thickness of 50 [μm] from the upper surface. As the sealing resin 9 used, a resin having an insulating property is used, and it is preferable to use a non-permeable or transparent resin. In the case of a transparent resin, the internal state after sealing can be confirmed, and the resin can be cured by irradiation with ultraviolet rays by using a photocurable resin as the transparent resin.

Next, as shown in FIG. 3 (6), after the resin is sealed, the frame layer 3 on the bottom surface is removed by etching or peeling. The etching is blocked by the second metal layer 2 having different etching characteristics, and only the frame layer can be etched. After the frame layer 3 is removed, the electrodes 4 are separated from each other and the bottom surface of the electrode 4 including the first metal layer 1 and the second metal layer 2 is exposed.

After the frame layer is removed, the electrode exposed on the surface opposite to the surface having the sealing resin may be plated as shown in FIG. Ni plating 10 is applied to the bottom surface of the electrode exposed from the sealing resin, and further Ni1
Au plating 11 is applied on 0 plating.

Next, another example of the method for manufacturing the semiconductor device of the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view of each step showing a manufacturing method of an example of the present invention using a metal layer having different etching characteristics between the first metal layer and the second metal layer.

First, as shown in FIG. 5 (1), a first metal layer and a second metal layer are laminated on each other with three layers of metal layers having different etching characteristics to form a first metal layer. By etching the layer, a plurality of electrodes 4 and an element housing portion 5 provided so as to be surrounded by the electrodes 4 are formed. In the present invention, since the etching characteristics of the second metal layer 2 are different from those of the first metal layer 1, full etching can be performed with the second metal layer 2 and the frame layer 3 left.

Next, as shown in FIG. 5B, the semiconductor element 6 is bonded and fixed to the element housing portion 5 with the adhesive 7.

Next, as shown in FIG. 5C, electrodes (not shown) on the surface of the mounted semiconductor element 6 and the first metal layer 1 are formed.
The upper surface of each electrode 4 provided above is electrically connected by a thin metal wire 8.

Next, as shown in FIG. 5 (4), the surface side on which the semiconductor element 6 is mounted is sealed with the sealing resin 9.

Next, as shown in FIG. 5 (5), after the resin sealing, the frame layer 3 on the bottom surface can be removed by etching. Further, the frame layer 3 may be removed by peeling it off, whereby the time required for the removal can be shortened as compared with the removal by etching. At this time, the frame layer 3 may slightly remain on the second metal layer, but this can be removed by separate etching.

Next, as shown in FIG. 5 (6), the second metal layer 2 is removed by etching or grinding. By removing the second metal layer 2 by this etching or grinding process, the electrodes 4 are separated from each other and the bottom surface of the electrode 4 made of the first metal layer 1 is exposed. Removal of the second metal layer 2 by grinding is preferable. Grinding is a dry process, and environmental considerations are taken into consideration.

[0048]

According to the present invention, it is possible to flatten the bottom surface between electrodes after etching, narrow the pitch between electrodes, make the etching depth uniform, and dramatically improve productivity. Therefore, this is an indispensable technology for practical application of a small and thin resin-encapsulated semiconductor device.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a semiconductor device manufactured by the present invention.

FIG. 2 shows an example of a laminated foil having three layers used for manufacturing the semiconductor device of the present invention.

FIG. 3 is a diagram showing an example of a method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a diagram showing a cross-sectional view of a semiconductor device in which an electrode of the present invention is plated.

FIG. 5 is a diagram showing an example of a method for manufacturing a semiconductor device of the present invention.

FIG. 6 is a diagram showing a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

1. First metal layer, 2. Second metal layer, 3. Frame layer, 4. Electrodes, 5. Element housing portion, 6. Semiconductor element, 7.
Adhesive, 8. Thin metal wire, 9. Sealing resin, 10. Ni plating, 11. Au plating, 12. Frame body, 13. Frame member

Claims (8)

[Claims] 1. A semiconductor element, an electrode arranged around the semiconductor element, a thin wire electrically connecting a surface of the electrode and an electrode of the semiconductor element, and the semiconductor element, the electrode and the thin wire. A method of manufacturing a semiconductor device having a sealed sealing resin, the first metal layer serving as the electrode, a second metal layer continuous with the first metal layer, and the second metal A laminated foil having three layers of a frame layer bonded to the first metal layer through the layers, and at least the second metal layer and the frame layer having different etching characteristics are used (1) to be the electrode A step of forming an electrode and an element housing part for housing the semiconductor element by etching the first metal layer, and (2)
A step of removing the second metal layer which is not in contact with the electrode by etching; (3) a step of fixing the semiconductor element in the element accommodating portion; and (4) a step of electrically connecting the semiconductor element and the electrode with a thin wire. And (5) after the step of sealing the semiconductor element, the electrode, and the thin wire with a sealing resin, (6)
A method of manufacturing a semiconductor device, comprising removing the frame layer. 2. A semiconductor element, an electrode arranged around the semiconductor element, a thin wire electrically connecting a surface of the electrode and an electrode of the semiconductor element, and the semiconductor element, the electrode and the thin wire. A method of manufacturing a semiconductor device having a sealed sealing resin, the first metal layer serving as the electrode, a second metal layer continuous with the first metal layer, and the second metal Using a laminated foil having three layers of a frame layer bonded to the first metal layer via a layer, at least the first metal layer and the second metal layer have different etching characteristics, (1) A step of forming an electrode and an element housing portion for housing the semiconductor element by etching a first metal layer to be an electrode,
(2) a step of fixing a semiconductor device in the device housing,
(3) A step of electrically connecting the semiconductor element and the electrode with a thin wire; (4) A step of sealing the semiconductor element, the electrode and the thin wire with a sealing resin; (5) The frame layer (6) A method of manufacturing a semiconductor device, comprising: (6) removing the second metal layer to expose the electrode after the step of removing the. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the removal of the second metal layer is performed by grinding. 4. The method of manufacturing a semiconductor device according to claim 2, wherein the removal of the second metal layer is performed by etching. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the frame layer is removed by etching. 6. The method of manufacturing a semiconductor device according to claim 1, wherein the frame layer is removed by peeling. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the exposed electrode is plated. 8. The method of manufacturing a semiconductor device according to claim 1, wherein the second metal layer is a dry film formation layer.