JP2003084010A - High frequency probe - Google Patents
High frequency probeInfo
- Publication number
- JP2003084010A JP2003084010A JP2001277515A JP2001277515A JP2003084010A JP 2003084010 A JP2003084010 A JP 2003084010A JP 2001277515 A JP2001277515 A JP 2001277515A JP 2001277515 A JP2001277515 A JP 2001277515A JP 2003084010 A JP2003084010 A JP 2003084010A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- protruding
- signal
- frequency probe
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、高周波電気信号
の計測に使用するプローブに関し、特に半導体集積回路
などの高周波デバイスの電気的特性の測定に使用する高
周波プローブに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe used for measuring a high frequency electric signal, and more particularly to a high frequency probe used for measuring an electrical characteristic of a high frequency device such as a semiconductor integrated circuit.
【０００２】[0002]
【従来の技術】図９は、例えば特開平１１―１５３６１
８号公報に記載される従来の高周波プローブの構造を示
す断面図である。なおこの場合、被測定物である高周波
デバイス１の信号電極とグラウンド電極とは同一平面上
になく、グラウンド電極はデバイス１の裏面全体に形成
されたものとし、デバイス１を載置するデバイスステー
ジ８を高周波デバイス１のグラウンド電極として機能さ
せる。図に示すように、高周波デバイス１の信号電極パ
ッドにコンタクトする針２からの高周波信号をコネクタ
３により取り出し、外部の計測器に伝送するための信号
線としてマイクロストリップライン４を用い、このマイ
クロストリップライン４が表面に形成されたプリント基
板５は裏面のベタグラウンド面を金属ブロック６に電気
的に接触させた上で固定される。金属ブロック６にはス
プリングプローブ７が設けられ、デバイスステージ８に
スプリングプローブ７を押し当てる構造となる。また、
信号線のインピーダンス不整合、特にマイクロストリッ
プライン４と針２との間の不整合を無くすために、マイ
クロストリップライン４および針２上を、金属ブロック
６に接続された金属板９で囲いキャビティ構造が形成さ
れる。これにより、このキャビティ全体でグラウンド電
極８に接続される構造となる。また、針２が信号電極パ
ッドとコンタクトしたとき、即ちたわませた状態の針２
と、金属板９および金属ブロック６とが平行になるよ
う、金属板９および金属ブロック６は曲線形状に形成さ
れる。2. Description of the Related Art FIG. 9 shows, for example, Japanese Patent Laid-Open No. 11-15361.
It is sectional drawing which shows the structure of the conventional high frequency probe described in the 8th publication. In this case, it is assumed that the signal electrode and the ground electrode of the high-frequency device 1 that is the object to be measured are not on the same plane and the ground electrode is formed on the entire back surface of the device 1, and the device stage 8 on which the device 1 is mounted is mounted. To function as the ground electrode of the high frequency device 1. As shown in the figure, a microstrip line 4 is used as a signal line for taking out a high frequency signal from a needle 2 contacting a signal electrode pad of a high frequency device 1 with a connector 3 and transmitting it to an external measuring instrument. The printed circuit board 5 having the line 4 formed on the front surface is fixed after the solid ground surface on the rear surface is electrically contacted with the metal block 6. A spring probe 7 is provided on the metal block 6, and the spring probe 7 is pressed against the device stage 8. Also,
In order to eliminate the impedance mismatch of the signal lines, especially the mismatch between the microstrip line 4 and the needle 2, the microstrip line 4 and the needle 2 are surrounded by a metal plate 9 connected to a metal block 6 to form a cavity structure. Is formed. As a result, the entire cavity is connected to the ground electrode 8. In addition, when the needle 2 contacts the signal electrode pad, that is, the needle 2 in a bent state
The metal plate 9 and the metal block 6 are formed in a curved shape so that the metal plate 9 and the metal block 6 are parallel to each other.
【０００３】[0003]
【発明が解決しようとする課題】以上のように構成され
る従来の高周波プローブでは、被測定物である高周波デ
バイス１の信号電極とグラウンド電極とが同一平面上で
ない場合に適用でき、インピーダンス整合を取り良好な
高周波伝送特性が得られる。しかしながら、針２の先端
位置と金属ブロック６に設けられたスプリングプローブ
７の位置との距離がある程度以上必要であるため、高周
波デバイスの信号電極とグラウンド電極とが近接して配
置されている場合には適用できなかった。また、プロー
ブと電極との接触時に確実に接触しているかどうかの確
認が、上方からの画像確認だけでは困難であるという問
題点もあった。The conventional high-frequency probe configured as described above can be applied when the signal electrode and the ground electrode of the high-frequency device 1 as the object to be measured are not on the same plane, and impedance matching is performed. Good high frequency transmission characteristics can be obtained. However, since the distance between the tip position of the needle 2 and the position of the spring probe 7 provided on the metal block 6 needs to be a certain amount or more, when the signal electrode and the ground electrode of the high frequency device are arranged close to each other. Was not applicable. There is also a problem that it is difficult to confirm whether or not the probe and the electrode are surely in contact with each other only by confirming the image from above.
【０００４】この発明は、上記のような問題点を解消す
るために成されたものであって、高周波デバイスの信号
電極とグラウンド電極とが近接して、かつ同一平面上に
ない場合でも、信号電極、グラウンド電極への良好で安
定したコンタクトを得て高周波デバイスの正確な高周波
特性を測定できる高周波プローブの構造を提供すること
を目的とする。また、高周波デバイスの信号電極、グラ
ウンド電極へのコンタクトが確実に為されていることを
容易に確認できることを目的とする。The present invention has been made in order to solve the above-mentioned problems, and the signal signal of the high frequency device and the ground electrode are close to each other and are not on the same plane. An object of the present invention is to provide a structure of a high-frequency probe capable of obtaining a good and stable contact with an electrode and a ground electrode and measuring accurate high-frequency characteristics of a high-frequency device. Another object is to be able to easily confirm that the signal electrode and the ground electrode of the high-frequency device are reliably contacted.
【０００５】[0005]
【課題を解決するための手段】この発明の請求項１に係
る高周波プローブは、信号伝送路となる信号線を可撓性
の絶縁材料で覆い該絶縁材料で構成される突出基板を上
記高周波プローブ本体から突出させて備え、該突出基板
が、裏面をグラウンド面とし、高周波デバイスの信号電
極、グラウンド電極にそれぞれ接触する信号用電極部、
グラウンド用電極部を該突出基板先端部の表面に配する
マイクロストリップ構造であり、上記信号用電極部、上
記グラウンド用電極部を上記信号線、上記グラウンド面
に、それぞれ上記突出基板に設けたスルーホールを介し
て接続したものである。According to a first aspect of the present invention, there is provided a high frequency probe, wherein a signal line to be a signal transmission path is covered with a flexible insulating material, and a protruding substrate made of the insulating material is provided. Provided by protruding from the main body, the protruding substrate, the back surface as a ground surface, the signal electrode of the high-frequency device, the signal electrode portion that contacts the ground electrode, respectively.
It is a microstrip structure in which a ground electrode portion is arranged on the surface of the protruding substrate tip portion, and the signal electrode portion, the ground electrode portion are provided on the signal line and the ground surface, respectively, on the protruding substrate. It is connected through the hall.
【０００６】この発明の請求項２に係る高周波プローブ
は、請求項１において、信号用電極部およびグラウンド
用電極部を突起電極で構成したものである。According to a second aspect of the present invention, in the high frequency probe according to the first aspect, the signal electrode portion and the ground electrode portion are formed by protruding electrodes.
【０００７】この発明の請求項３に係る高周波プローブ
は、請求項１において、グラウンド用電極部を、突起電
極で構成された信号用電極部およびその周囲領域を除く
突出基板表面全体に形成したものである。A high frequency probe according to a third aspect of the present invention is the high frequency probe according to the first aspect, in which the ground electrode portion is formed on the entire surface of the protruding substrate except for the signal electrode portion formed of the protruding electrode and its surrounding area. Is.
【０００８】この発明の請求項４に係る高周波プローブ
は、請求項２または３において、突出基板表面に形成さ
れた突起電極の表面を、ビッカーズ硬度（Ｈｖ）４０を
下らない金属膜でコーティングしたものである。A high frequency probe according to a fourth aspect of the present invention is the high frequency probe according to the second or third aspect, wherein the surface of the protruding electrode formed on the surface of the protruding substrate is coated with a metal film having a Vickers hardness (Hv) of 40 or less. is there.
【０００９】この発明の請求項５に係る高周波プローブ
は、請求項２または３において、スルーホール内に金属
材料からなる接触端子を、突出基板表面から突出させて
設け、該接触端子で突起電極を構成したものである。According to a fifth aspect of the present invention, in the high frequency probe according to the second or third aspect, the contact terminal made of a metal material is provided in the through hole so as to protrude from the surface of the protruding substrate, and the protruding electrode is formed at the contact terminal. It is composed.
【００１０】この発明の請求項６に係る高周波プローブ
は、請求項１〜５のいずれかにおいて、突出基板の先端
部に表面から裏面に貫通するスリットを設け、該スリッ
トにより分断された一片の表面に信号用電極部を配し、
該信号用電極部と他片の表面に形成されたグラウンド用
電極部とを、高周波デバイスの上記信号電極、上記グラ
ウンド電極にそれぞれ接触させるものである。According to a sixth aspect of the present invention, in the high frequency probe according to any one of the first to fifth aspects, a slit penetrating from the front surface to the back surface is provided at the tip of the protruding substrate, and the surface of one piece divided by the slit. The signal electrode part is arranged in
The signal electrode portion and the ground electrode portion formed on the surface of the other piece are respectively brought into contact with the signal electrode and the ground electrode of the high frequency device.
【００１１】この発明の請求項７に係る高周波プローブ
は、請求項６において、信号線を、スリットと所定の距
離を有して配設したものである。A high-frequency probe according to a seventh aspect of the present invention is the high-frequency probe according to the sixth aspect, wherein the signal line is arranged with a predetermined distance from the slit.
【００１２】この発明の請求項８に係る高周波プローブ
は、請求項１〜７のいずれかにおいて、高周波デバイス
のグラウンド電極と電気的に導通したデバイスステージ
を該高周波デバイスのグラウンド電極として、突出基板
に形成されたグラウンド用電極部を上記デバイスステー
ジに接触させるものである。According to a eighth aspect of the present invention, in the high frequency probe according to any one of the first to seventh aspects, the device stage electrically connected to the ground electrode of the high frequency device is used as the ground electrode of the high frequency device on the protruding substrate. The formed ground electrode portion is brought into contact with the device stage.
【００１３】この発明の請求項９に係る高周波プローブ
は、請求項１〜８のいずれかにおいて、突出基板は高周
波プローブの本体側に向かって徐々に幅が太くなる等応
力構造である。A high frequency probe according to a ninth aspect of the present invention is the high frequency probe according to any one of the first to eighth aspects, wherein the protruding substrate has an equal stress structure in which the width gradually increases toward the main body side of the high frequency probe.
【００１４】この発明の請求項１０に係る高周波プロー
ブは、請求項１〜９のいずれかに記載の突出基板の裏面
のグラウンド面上に、先端部に配した所定の厚さの弾性
体を介して補強金属板を設け、上記突出基板先端部に
て、該突出基板表面の信号用電極部、グラウンド用電極
部を高周波デバイスの信号電極、グラウンド電極にそれ
ぞれ同時に接触させる際に発生する上記突出基板の撓み
を、上記弾性体で吸収させるようにしたものである。According to a tenth aspect of the present invention, a high-frequency probe according to any one of the first to ninth aspects has an elastic body of a predetermined thickness disposed at the tip end on the ground surface of the back surface of the protruding substrate. And a reinforcing metal plate is provided on the protruding substrate, and the protruding substrate occurs when the signal electrode portion and the ground electrode portion on the surface of the protruding substrate are simultaneously brought into contact with the signal electrode and the ground electrode of the high frequency device, respectively. The bending of the above is absorbed by the elastic body.
【００１５】この発明の請求項１１に係る高周波プロー
ブは、請求項１０において、補強金属板に該補強金属板
のひずみを検出する抵抗体からなるひずみゲージを設け
たものである。A high frequency probe according to an eleventh aspect of the present invention is the high frequency probe according to the tenth aspect, wherein the reinforcing metal plate is provided with a strain gauge made of a resistor for detecting a strain of the reinforcing metal plate.
【００１６】この発明の請求項１２に係る高周波プロー
ブは、請求項１０において、補強金属板の突出基板と反
対側に、上記補強金属板先端部の変位を検出するレーザ
変位計を、上記補強金属板と離間させて設けたものであ
る。According to a twelfth aspect of the present invention, in the high frequency probe according to the tenth aspect, a laser displacement meter for detecting a displacement of the tip portion of the reinforcing metal plate is provided on the side of the reinforcing metal plate opposite to the protruding substrate. It is provided separately from the plate.
【００１７】[0017]
【発明の実施の形態】実施の形態１．以下、この発明の
実施の形態１を図について説明する。図１は、この発明
の実施の形態１による高周波プローブの全体構成を示す
図であり、図１（ａ）は平面図、図１（ｂ）は図１
（ａ）のＡ−Ａ線による断面図である。図において、１
１はプローブ本体側の固定箇所から先端に向けて突出し
た突出基板、１１ａは図示しない高周波デバイスの電極
に押し当てる突出基板先端部、１２は外部測定器への接
続部分となるコネクタ、１３はプローブをテスタに固定
する部材、１４は突出基板先端部１１ａからコネクタ１
２まで配設された信号線、１５はプローブ自体の特性イ
ンピーダンスを被測定物であるデバイスに合わせて測定
器とのインピーダンスを整合するための抵抗、１６は突
出基板先端部１１ａ上に設けられた弾性体、１７は空
洞、１８は突出基板１１を補強する補強金属板で、突出
基板先端部１１ａでは弾性体１６を介してその上に設け
られる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. Embodiment 1 of the present invention will be described below with reference to the drawings. 1A and 1B are diagrams showing the overall configuration of a high-frequency probe according to Embodiment 1 of the present invention. FIG. 1A is a plan view and FIG.
It is sectional drawing by the AA line of (a). In the figure, 1
Reference numeral 1 denotes a protruding substrate protruding from a fixed portion on the probe body side toward a tip, 11a denotes a protruding substrate tip portion pressed against an electrode of a high-frequency device (not shown), 12 denotes a connector serving as a connecting portion to an external measuring instrument, and 13 denotes a probe. Is a member for fixing the connector to the tester.
Signal lines arranged up to 2, reference numeral 15 is a resistor for matching the characteristic impedance of the probe itself with the device to be measured to match the impedance with the measuring device, and 16 is provided on the protruding substrate tip 11a. An elastic body, 17 is a cavity, and 18 is a reinforcing metal plate that reinforces the protruding substrate 11, and is provided on the protruding substrate front end portion 11 a via the elastic body 16.
【００１８】図１で示す突出基板先端部１１ａの詳細を
図２に示す。図２（ａ）は平面図、図２（ｂ）は斜視図
（イメージ図）である。また、プローブ先端部分と被検
査物である高周波デバイスとのテスト時の接触状態のイ
メージ図を図３に示す。なお、図３では、高周波デバイ
ス１の裏面のグラウンド電極と電気的に導通したデバイ
スステージ８を高周波デバイス１のグラウンド電極とし
て機能させ、突出基板に形成されたグラウンド用電極部
２２をデバイスステージ８に接触させるものである。図
１〜図３に示すように、突出基板１１はプローブの本体
側に向かって徐々に幅が太くなる形状で形成され、信号
線１４をポリミドフィルム等の可撓性の絶縁材料１９で
覆って構成すると共に、被検査物と接触しない裏面側が
金属薄板から成るベタグラウンド面２０であるマイクロ
ストリップ構造をしている。この絶縁材料１９の厚さ、
誘電率および信号線１４の幅は被検査物である高周波デ
バイスの特性インピーダンスによって決定される。ま
た、突出基板先端部１１ａの表面（被検査物と接触側）
には、信号用電極部としてのバンプ電極２１（以下、信
号用突起電極２１と称す）およびグラウンド用電極部と
してのバンプ電極２２（以下、グラウンド用突起電極２
２と称す）が形成され、これらはベタグラウンド面２０
および信号線１４からスルーホール２３ａ、２３ｂを介
してそれぞれ接続される。なお、図２（ｂ）および図３
では、図示の便宜上、スルーホール２３ａ、２３ｂが突
出基板１１の先端面に露出するように形成されている
が、若干内側に形成される方が、スルーホール２３ａ、
２３ｂおよび突起電極２１、２２の形成の信頼性が高
く、望ましい。Details of the protruding substrate tip portion 11a shown in FIG. 1 are shown in FIG. 2A is a plan view and FIG. 2B is a perspective view (image view). Further, FIG. 3 shows an image diagram of a contact state between the tip portion of the probe and the high-frequency device which is the inspection object at the time of the test. In FIG. 3, the device stage 8 electrically connected to the ground electrode on the back surface of the high frequency device 1 is caused to function as the ground electrode of the high frequency device 1, and the ground electrode portion 22 formed on the protruding substrate is provided on the device stage 8. It is something to contact. As shown in FIGS. 1 to 3, the protruding substrate 11 is formed in a shape in which the width gradually increases toward the main body side of the probe, and the signal line 14 is covered with a flexible insulating material 19 such as a polyimide film. In addition to the above, the microstrip structure has a solid surface 20 made of a thin metal plate on the back surface side that does not contact the inspection object. The thickness of this insulating material 19,
The permittivity and the width of the signal line 14 are determined by the characteristic impedance of the high frequency device which is the inspection object. Further, the surface of the protruding substrate tip portion 11a (contact side with the inspection object)
The bump electrode 21 as the signal electrode portion (hereinafter referred to as the signal protruding electrode 21) and the bump electrode 22 as the ground electrode portion (hereinafter referred to as the ground protruding electrode 2).
2) is formed, and these are solid ground planes 20.
And the signal line 14 through the through holes 23a and 23b, respectively. 2 (b) and 3
Then, for convenience of illustration, the through holes 23a and 23b are formed so as to be exposed at the front end surface of the protruding substrate 11, but the through holes 23a and 23b are preferably formed slightly inside.
23b and the protruding electrodes 21 and 22 are highly reliable and desirable.
【００１９】また図３に示すように、測定時には、高周
波デバイス１の信号電極としての信号パッド２４、グラ
ウンド電極となるデバイスステージ８に、それぞれ信号
用突起電極２１、グラウンド用突起電極２２を押し当て
て接触させる。このとき、信号パッド２４とデバイスス
テージ８とが同一平面上でなく段差を有する場合、可撓
性の絶縁材料１９で構成される突出基板先端部１１ａ
は、補強金属板１８により弾性体１６を介して上方から
押圧されることにより上記段差に沿って撓み、弾性体１
６が収縮してその撓みが吸収される。これにより、信号
用突起電極２１およびグラウンド用突起電極２２は、確
実に信号パッド２４およびデバイスステージ８に接触し
て、安定した電気的導通が得られ、高周波デバイス１の
高周波特性を信頼性良く測定できる。Further, as shown in FIG. 3, during measurement, the signal projecting electrode 21 and the ground projecting electrode 22 are pressed against the signal pad 24 as the signal electrode of the high frequency device 1 and the device stage 8 serving as the ground electrode, respectively. Contact them. At this time, when the signal pad 24 and the device stage 8 are not on the same plane but have a step, the protruding substrate tip portion 11a composed of the flexible insulating material 19 is formed.
Is urged from above by the reinforcing metal plate 18 via the elastic body 16 to bend along the step, and the elastic body 1
6 contracts and the bending is absorbed. Thereby, the signal protruding electrode 21 and the ground protruding electrode 22 are surely brought into contact with the signal pad 24 and the device stage 8, and stable electrical conduction is obtained, and the high frequency characteristics of the high frequency device 1 are measured with high reliability. it can.
【００２０】以上のようにこの実施の形態では、高周波
デバイス１の信号電極（信号パッド２４）とグラウンド
電極（デバイスステージ８）とが近接して配置された場
合に、これらの電極が同一平面上でなくても、プローブ
と良好な接触状態が得られ、高周波デバイス１の高周波
特性を信頼性良く測定できる。また、可撓性の絶縁材料
１９で構成される突出基板先端部１１ａを高周波デバイ
ス１の電極間の段差に沿って撓ませ、その上に設けられ
た弾性体１６を収縮させるため、小さい押圧力で確実な
接触状態が得られ、高周波デバイス１側へのダメージも
低減できる。またこの実施の形態では、突出基板１１を
プローブの本体側に向かって徐々に幅が太くなる形状と
することにより、先端部１１ａが高周波デバイス１と接
触する際に根元部で大きくなる応力を分散することがで
き、突出基板１１全体で等応力構造とすることができ
る。これにより、先端部１１ａが繰り返し高周波デバイ
ス１と接触する突出基板１１を、応力に対して強い構造
とすることができる。As described above, in this embodiment, when the signal electrode (signal pad 24) and the ground electrode (device stage 8) of the high frequency device 1 are arranged close to each other, these electrodes are on the same plane. Even if not, a good contact state with the probe can be obtained, and the high frequency characteristics of the high frequency device 1 can be measured with high reliability. Further, since the protruding substrate tip portion 11a made of the flexible insulating material 19 is bent along the step between the electrodes of the high frequency device 1 and the elastic body 16 provided thereon is contracted, a small pressing force is applied. Thus, a reliable contact state can be obtained, and damage to the high frequency device 1 side can be reduced. Further, in this embodiment, the projecting substrate 11 has a shape in which the width gradually increases toward the main body side of the probe, so that when the tip portion 11a comes into contact with the high frequency device 1, the stress that increases at the root portion is dispersed. Therefore, the entire projecting substrate 11 can have an equal stress structure. As a result, the protruding substrate 11 whose tip 11a repeatedly contacts the high frequency device 1 can have a structure that is strong against stress.
【００２１】なお、弾性体１６に隣接する部分は空洞１
７としたが、弾性体１６に比べて十分ヤング率の小さな
弾性体を挿入しても良い。また、信号用突起電極２およ
び１グラウンド用突起電極２２は、その表面をＰｔなど
ビッカーズ硬度（Ｈｖ）が４０を下らない硬質の金属膜
でコーティングしても良く、これにより、摩耗しにくく
なり耐久性が増す。The portion adjacent to the elastic body 16 is the cavity 1
However, an elastic body having a sufficiently smaller Young's modulus than the elastic body 16 may be inserted. In addition, the signal protruding electrode 2 and the 1-ground protruding electrode 22 may be coated on their surfaces with a hard metal film having a Vickers hardness (Hv) of not lower than 40, such as Pt. Will increase.
【００２２】実施の形態２．上記実施の形態１では、突
出基板先端部１１ａ表面にグラウンド用突起電極２２を
設けたが、図４に示すように、高周波デバイス１との接
触側である突出基板１１表面全体にグラウンド用電極部
としての金属薄板２５（以下、グラウンド用電極膜２５
と称す）を形成しても良い。この場合、信号用突起電極
２１およびその周囲領域には切り欠き部２６を設けて、
グラウンド用電極膜２５と信号用突起電極２１とを絶縁
する。なおこの場合、グラウンド用電極膜２５と裏面の
ベタグラウンド面２０とは、２つまたはそれ以上のスル
ーホールにより接続しても良い。これにより、信号線１
４は上下のグラウンド線（ベタグラウンド面２０、グラ
ウンド用電極膜２５）で挟まれ、高周波伝送特性が向上
する。Embodiment 2. In the first embodiment, the protruding electrode 22 for ground is provided on the surface of the protruding substrate tip portion 11a. However, as shown in FIG. 4, the ground electrode portion is provided on the entire surface of the protruding substrate 11 which is the contact side with the high frequency device 1. Thin plate 25 (hereinafter, electrode film 25 for ground)
May be formed). In this case, the notch portion 26 is provided in the signal protruding electrode 21 and the surrounding area,
The ground electrode film 25 and the signal protruding electrode 21 are insulated from each other. In this case, the ground electrode film 25 and the solid surface 20 on the back surface may be connected by two or more through holes. As a result, the signal line 1
4 is sandwiched by the upper and lower ground wires (solid ground surface 20, ground electrode film 25), and high frequency transmission characteristics are improved.
【００２３】実施の形態３．図５は、この発明の実施の
形態３による突出基板先端部１１ａの平面図および斜視
図（イメージ図）である。図に示すように、突出基板先
端部１１ａに、表面から裏面に貫通するスリット２７を
設け、このスリット２７により分断された一片の表面に
信号用突起電極２１を配設する。また信号線１４は、突
出基板先端部１１ａではスリットと所定の距離を保って
平行に配設する。このようにスリット２７を設け、分断
された一片の表面に信号用突起電極２１を配し、この信
号用突起電極２１と他片の表面に形成されたグラウンド
用電極膜２５とを、高周波デバイス１の信号パッド２４
とデバイスステージ８とにそれぞれ接触させる。これに
より、高周波デバイス側の信号パッド２４とデバイスス
テージ８とに段差を有しても、プローブ側の電極２１、
２５はスリット２７により分離されているため、信号パ
ッド２４とデバイスステージ８とのそれぞれの高さに容
易に合わせることができ、良好な接触状態が容易で確実
に得られる。また、上記実施の形態２では、グラウンド
用電極膜２５に切り欠き部２６を設けて信号用突起電極
２１と絶縁したが、図５（ｂ）に示すように、全面に形
成したグラウンド用電極膜２５表面の、信号用突起電極
２１形成領域およびその周囲領域を絶縁膜２８で覆った
後、この絶縁膜２８上に信号用突起電極２１を形成する
ようにしても良い。Embodiment 3. 5A and 5B are a plan view and a perspective view (image diagram) of a protruding substrate tip portion 11a according to Embodiment 3 of the present invention. As shown in the drawing, a slit 27 penetrating from the front surface to the back surface is provided in the protruding substrate tip portion 11a, and the signal protruding electrode 21 is provided on the surface of one piece divided by the slit 27. Further, the signal line 14 is arranged in parallel with the slit at the tip portion 11a of the protruding substrate, keeping a predetermined distance. In this way, the slit 27 is provided, the signal protruding electrode 21 is arranged on the surface of the divided piece, and the signal protruding electrode 21 and the ground electrode film 25 formed on the surface of the other piece are connected to the high frequency device 1 Signal pad 24
And device stage 8, respectively. As a result, even if there is a step between the signal pad 24 on the high frequency device side and the device stage 8, the electrode 21 on the probe side,
Since 25 is separated by the slit 27, it can be easily adjusted to the respective heights of the signal pad 24 and the device stage 8, and a good contact state can be easily and surely obtained. Further, in the second embodiment, the ground electrode film 25 is provided with the cutout portion 26 to insulate the signal projection electrode 21. However, as shown in FIG. 5B, the ground electrode film formed over the entire surface. The signal projecting electrode 21 may be formed on the insulating film 28 after the signal projecting electrode 21 forming region and its surrounding region on the surface 25 are covered with the insulating film 28.
【００２４】なお、スリット２７は１本のみでなく、図
６に示すように２本設けても良い。また図６に示すよう
に、例えばタングステン等、摩耗しにくい金属材料から
なる接触端子２９をスルーホール２３ａ内に突出基板表
面から突出させて設けても良く、通常のバンプ電極２１
と共に突起電極を構成することで、突起電極２１、２９
の摩耗に対する耐久性がさらに向上し、高周波デバイス
側とプローブ側とのさらに安定した接触状態が得られ
る。なお、接触端子２９のみで突起電極を構成すること
もできる。The slit 27 is not limited to one, and two slits 27 may be provided as shown in FIG. Further, as shown in FIG. 6, a contact terminal 29 made of a metal material such as tungsten which is hard to wear may be provided in the through hole 23a so as to project from the surface of the projecting substrate.
By forming the protruding electrodes together with the protruding electrodes 21, 29,
The durability against abrasion is further improved, and a more stable contact state between the high frequency device side and the probe side can be obtained. It is also possible to form the protruding electrode only with the contact terminal 29.
【００２５】実施の形態４．図７は、この発明の実施の
形態４による高周波プローブの先端部分を示したもの
で、図７（ａ）は平面図、図７（ｂ）は図７（ａ）の先
端側（左側）から見た側断面図、図７（ｃ）は図７
（ａ）のＢ−Ｂ線による断面図である。図に示すよう
に、補強金属板１８上に抵抗体で構成されるひずみゲー
ジ３０を設ける。これにより、測定時に突出基板先端部
１１ａが高周波デバイス１と接触した際に発生する補強
金属板１８のひずみ（撓み）が、ひずみゲージ３０の抵
抗の変化により検出できる。突出基板先端部１１ａが高
周波デバイス１と接触する際、ほとんどスクラブしない
ため、上方からの画像確認だけでは接触状態の確認は困
難であるが、ひずみゲージ３０を設けて補強金属板１８
のひずみを検出することにより、確実に接触しているか
どうかの確認が容易に可能になる。Fourth Embodiment 7A and 7B show a tip portion of a high frequency probe according to Embodiment 4 of the present invention. FIG. 7A is a plan view, and FIG. 7B is a tip side (left side) of FIG. 7A. FIG. 7C is a side cross-sectional view as seen.
It is sectional drawing by the BB line of (a). As shown in the figure, a strain gauge 30 composed of a resistor is provided on the reinforcing metal plate 18. Thereby, the strain (flexure) of the reinforcing metal plate 18 that occurs when the protruding substrate tip portion 11 a comes into contact with the high frequency device 1 during measurement can be detected by the change in the resistance of the strain gauge 30. When the protruding substrate tip portion 11a comes into contact with the high-frequency device 1, it hardly scrubs, so it is difficult to confirm the contact state only by confirming the image from above, but the strain gauge 30 is provided and the reinforcing metal plate 18 is provided.
By detecting the strain of, it is possible to easily confirm whether or not the contact is sure.
【００２６】なお、接触状態の確認は、図８（ａ）に示
すように、補強金属板１８上方に補強金属板先端部の変
位を検出するレーザ変位計３１を設けても良く、突出基
板先端部１１ａが高周波デバイス１と接触した際に発生
する補強金属板先端部のひずみによる変位が容易に検出
できて、接触状態の確認が容易に可能になる。また、レ
ーザ変位計３１は設置空間に余裕がない場合は、図８
（ｂ）に示すように、ミラーなどの反射物３２ａ、３２
ｂを設けて、照射したレーザー光の反射光を検出するよ
うにしても良く、同様の効果が得られる。To confirm the contact state, as shown in FIG. 8A, a laser displacement meter 31 for detecting the displacement of the tip portion of the reinforcing metal plate may be provided above the reinforcing metal plate 18, and the tip of the protruding substrate may be detected. The displacement due to the distortion of the tip portion of the reinforcing metal plate generated when the portion 11a contacts the high frequency device 1 can be easily detected, and the contact state can be easily confirmed. If the laser displacement meter 31 does not have enough space for installation,
As shown in (b), reflectors 32a, 32 such as mirrors
b may be provided to detect the reflected light of the emitted laser light, and the same effect can be obtained.
【００２７】[0027]
【発明の効果】以上のようにこの発明の請求項１に係る
高周波プローブは、信号伝送路となる信号線を可撓性の
絶縁材料で覆い該絶縁材料で構成される突出基板を上記
高周波プローブ本体から突出させて備え、該突出基板
が、裏面をグラウンド面とし、高周波デバイスの信号電
極、グラウンド電極にそれぞれ接触する信号用電極部、
グラウンド用電極部を該突出基板先端部の表面に配する
マイクロストリップ構造であり、上記信号用電極部、上
記グラウンド用電極部を上記信号線、上記グラウンド面
に、それぞれ上記突出基板に設けたスルーホールを介し
て接続したため、高周波デバイスの信号電極とグラウン
ド電極とが近接して配置された場合に、これらの電極が
同一平面上でなくても、突出基板先端部がその段差に沿
って撓んで高周波デバイスと良好な接触状態が得られ高
周波特性を信頼性良く測定できる。As described above, in the high frequency probe according to claim 1 of the present invention, the signal line to be a signal transmission path is covered with a flexible insulating material, and the protruding substrate made of the insulating material is used as the high frequency probe. Provided by protruding from the main body, the protruding substrate, the back surface as a ground surface, the signal electrode of the high-frequency device, the signal electrode portion that contacts the ground electrode, respectively.
It is a microstrip structure in which a ground electrode portion is arranged on the surface of the protruding substrate tip portion, and the signal electrode portion, the ground electrode portion are provided on the signal line and the ground surface, respectively, on the protruding substrate. Since they are connected through the holes, when the signal electrode and the ground electrode of the high-frequency device are arranged close to each other, even if these electrodes are not on the same plane, the protruding substrate tip portion bends along the step. A good contact condition with the high frequency device can be obtained and the high frequency characteristics can be measured with high reliability.
【００２８】またこの発明の請求項２に係る高周波プロ
ーブは、請求項１において、信号用電極部およびグラウ
ンド用電極部を突起電極で構成したため、高周波デバイ
スと良好な接触状態が確実に得られる。In the high frequency probe according to the second aspect of the present invention, since the signal electrode portion and the ground electrode portion are constituted by the protruding electrodes in the first aspect, a good contact state with the high frequency device can be surely obtained.
【００２９】またこの発明の請求項３に係る高周波プロ
ーブは、請求項１において、グラウンド用電極部を、突
起電極で構成された信号用電極部およびその周囲領域を
除く突出基板表面全体に形成したため、高周波デバイス
と良好な接触状態が確実に得られると共に、高周波伝送
特性が向上し、高周波特性をさらに信頼性良く測定でき
る。The high frequency probe according to a third aspect of the present invention is the high frequency probe according to the first aspect, in which the ground electrode portion is formed on the entire surface of the protruding substrate excluding the signal electrode portion formed of the protruding electrode and the peripheral region thereof. In addition, a good contact state with the high frequency device can be reliably obtained, the high frequency transmission characteristics are improved, and the high frequency characteristics can be measured with higher reliability.
【００３０】またこの発明の請求項４に係る高周波プロ
ーブは、請求項２または３において、突出基板表面に形
成された突起電極の表面を、ビッカーズ硬度（Ｈｖ）４
０を下らない金属膜でコーティングしたため、突起電極
が摩耗しにくくなり耐久性が向上する。A high frequency probe according to a fourth aspect of the present invention is the high frequency probe according to the second or third aspect, wherein the surface of the protruding electrode formed on the surface of the protruding substrate has a Vickers hardness (Hv) of 4
Since the coating is performed with a metal film that does not fall below 0, the protruding electrodes are less likely to be worn and durability is improved.
【００３１】またこの発明の請求項５に係る高周波プロ
ーブは、請求項２または３において、スルーホール内に
金属材料からなる接触端子を、突出基板表面から突出さ
せて設け、該接触端子で突起電極を構成したため、突起
電極が摩耗しにくくなり耐久性が向上する。A high frequency probe according to a fifth aspect of the present invention is the high frequency probe according to the second or third aspect, in which a contact terminal made of a metal material is provided in the through hole so as to protrude from the surface of the protruding substrate, and the contact terminal is used to form the protruding electrode. As a result, the protruding electrode is less likely to be worn and the durability is improved.
【００３２】またこの発明の請求項６に係る高周波プロ
ーブは、請求項１〜５のいずれかにおいて、突出基板の
先端部に表面から裏面に貫通するスリットを設け、該ス
リットにより分断された一片の表面に信号用電極部を配
し、該信号用電極部と他片の表面に形成されたグラウン
ド用電極部とを、高周波デバイスの上記信号電極、上記
グラウンド電極にそれぞれ接触させるため、高周波デバ
イスの信号電極とグラウンド電極との段差に沿って突出
基板先端部を容易に撓ませることができ、良好な接触状
態が容易で確実に得られる。A high frequency probe according to a sixth aspect of the present invention is the high frequency probe according to any one of the first to fifth aspects, wherein a slit penetrating from the front surface to the back surface is provided at the tip of the protruding substrate, and the slit is divided into one piece. The signal electrode portion is arranged on the surface, and the signal electrode portion and the ground electrode portion formed on the surface of the other piece are respectively brought into contact with the signal electrode of the high frequency device and the ground electrode. The protruding substrate tip can be easily bent along the step between the signal electrode and the ground electrode, and a good contact state can be easily and surely obtained.
【００３３】またこの発明の請求項７に係る高周波プロ
ーブは、請求項６において、信号線を、スリットと所定
の距離を有して配設したため、高周波信号を信頼性良く
伝送できる。In the high frequency probe according to the seventh aspect of the present invention, since the signal line is arranged with a predetermined distance from the slit in the sixth aspect, the high frequency signal can be reliably transmitted.
【００３４】またこの発明の請求項８に係る高周波プロ
ーブは、請求項１〜７のいずれかにおいて、高周波デバ
イスのグラウンド電極と電気的に導通したデバイスステ
ージを該高周波デバイスのグラウンド電極として、突出
基板に形成されたグラウンド用電極部を上記デバイスス
テージに接触させるため、グラウンド電極との安定した
接触状態が得られる。The high frequency probe according to claim 8 of the present invention is the projecting substrate according to any one of claims 1 to 7, wherein the device stage electrically connected to the ground electrode of the high frequency device is used as the ground electrode of the high frequency device. Since the ground electrode part formed on the device is brought into contact with the device stage, a stable contact state with the ground electrode can be obtained.
【００３５】またこの発明の請求項９に係る高周波プロ
ーブは、請求項１〜８のいずれかにおいて、突出基板は
高周波プローブの本体側に向かって徐々に幅が太くなる
等応力構造であるため、繰り返し高周波デバイスと接触
する突出基板を、応力に対して強い構造とすることがで
きる。A high frequency probe according to a ninth aspect of the present invention is the high frequency probe according to any one of the first to eighth aspects, in which the protruding substrate has an equal stress structure in which the width gradually increases toward the main body of the high frequency probe. The protruding substrate that repeatedly contacts the high frequency device can have a structure that is strong against stress.
【００３６】またこの発明の請求項１０に係る高周波プ
ローブは、請求項１〜９のいずれかに記載の突出基板の
裏面のグラウンド面上に、先端部に配した所定の厚さの
弾性体を介して補強金属板を設け、上記突出基板先端部
にて、該突出基板表面の信号用電極部、グラウンド用電
極部を高周波デバイスの信号電極、グラウンド電極にそ
れぞれ同時に接触させる際に発生する上記突出基板の撓
みを、上記弾性体で吸収させるようにしたため、高周波
デバイスとの良好な接触状態が安定して容易に得ること
ができ、安定した電気的導通により高周波特性を信頼性
良く測定できる。A high frequency probe according to a tenth aspect of the present invention has an elastic body of a predetermined thickness disposed at the tip end on the ground surface of the back surface of the protruding substrate according to any one of the first to ninth aspects. A reinforcing metal plate is provided through the protrusion, and the protrusion is generated when the signal electrode portion and the ground electrode portion on the surface of the protrusion substrate are brought into contact with the signal electrode and the ground electrode of the high-frequency device at the same time at the tip portion of the protrusion substrate. Since the bending of the substrate is absorbed by the elastic body, a good contact state with the high frequency device can be stably and easily obtained, and the high frequency characteristic can be measured with reliability by stable electrical conduction.
【００３７】またこの発明の請求項１１に係る高周波プ
ローブは、請求項１０において、補強金属板に該補強金
属板のひずみを検出する抵抗体からなるひずみゲージを
設けたため、高周波デバイスとの接触状態を容易に確認
できる。The high frequency probe according to an eleventh aspect of the present invention is the high frequency probe according to the tenth aspect, in which the reinforcing metal plate is provided with a strain gauge made of a resistor for detecting a strain of the reinforcing metal plate. Can be easily confirmed.
【００３８】またこの発明の請求項１２に係る高周波プ
ローブは、請求項１０において、補強金属板の突出基板
と反対側に、上記補強金属板先端部の変位を検出するレ
ーザ変位計を、上記補強金属板と離間させて設けたた
め、高周波デバイスとの接触状態を容易に確認できる。According to a twelfth aspect of the present invention, in the high-frequency probe according to the tenth aspect, the laser displacement meter for detecting the displacement of the tip of the reinforcing metal plate is provided on the side opposite to the protruding substrate of the reinforcing metal plate. Since it is provided separately from the metal plate, the contact state with the high frequency device can be easily confirmed.
【図１】 この発明の実施の形態１による高周波プロー
ブの全体構成を示す平面図および断面図である。FIG. 1 is a plan view and a cross-sectional view showing an overall configuration of a high frequency probe according to a first embodiment of the present invention.
【図２】 この発明の実施の形態１による高周波プロー
ブの突出基板先端部の詳細を示す平面図および斜視図で
ある。2A and 2B are a plan view and a perspective view showing details of a protruding substrate tip portion of the high-frequency probe according to the first embodiment of the present invention.
【図３】 この発明の実施の形態１による高周波プロー
ブ先端部分と高周波デバイスとの接触状態のイメージ図
である。FIG. 3 is an image diagram of a contact state between a high frequency probe tip portion and a high frequency device according to the first embodiment of the present invention.
【図４】 この発明の実施の形態２による高周波プロー
ブの突出基板先端部の詳細を示す斜視図である。FIG. 4 is a perspective view showing details of a protruding substrate tip portion of the high-frequency probe according to the second embodiment of the present invention.
【図５】 この発明の実施の形態３による高周波プロー
ブの突出基板先端部の詳細を示す平面図および斜視図で
ある。5A and 5B are a plan view and a perspective view showing details of a protruding substrate tip portion of a high-frequency probe according to Embodiment 3 of the present invention.
【図６】 この発明の実施の形態３の別例による高周波
プローブの突出基板先端部の詳細を示す斜視図である。FIG. 6 is a perspective view showing details of a protruding substrate tip portion of a high-frequency probe according to another example of the third embodiment of the present invention.
【図７】 この発明の実施の形態４による高周波プロー
ブの先端部分を示す平面図および断面図である。7A and 7B are a plan view and a sectional view showing a tip portion of a high frequency probe according to a fourth embodiment of the present invention.
【図８】 この発明の実施の形態４の別例による高周波
プローブの先端部分を示す断面図である。FIG. 8 is a sectional view showing a tip portion of a high-frequency probe according to another example of the fourth embodiment of the present invention.
【図９】 従来の高周波プローブの構造を示す断面図で
ある。FIG. 9 is a cross-sectional view showing the structure of a conventional high frequency probe.
１ 高周波デバイス、８ デバイスステージ、１１ 突
出基板、１１ａ 突出基板先端部、１２ コネクタ、１
４ 信号線、１６ 弾性体、１８ 補強金属板、１９
絶縁材料、２０ ベタグラウンド面、２１ 信号用電極
部としての信号用突起電極、２２ グラウンド用電極部
としてのグラウンド用突起電極、２３ａ，２３ｂ スル
ーホール、２４ 信号電極としての電極パッド、２５
グラウンド用電極部としてのグラウンド用電極膜、２６
切り欠き部、２７ スリット、２８ 絶縁膜、２９
接触端子、３０ ひずみゲージ、３１，３１ａ レーザ
変位計。1 high-frequency device, 8 device stage, 11 protruding substrate, 11a protruding substrate tip, 12 connector, 1
4 signal wire, 16 elastic body, 18 reinforced metal plate, 19
Insulating material, 20 Solid ground surface, 21 Signal protruding electrode as signal electrode portion, 22 Ground protruding electrode as ground electrode portion, 23a, 23b through holes, 24 Electrode pad as signal electrode, 25
An electrode film for ground as an electrode portion for ground, 26
Notch, 27 Slit, 28 Insulating film, 29
Contact terminal, 30 strain gauge, 31, 31a laser displacement meter.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2G003 AA07 AE03 AG03 AG08 AG12 AG13 2G011 AA16 AA21 AB01 AB09 AC14 AC32 AE22 4M106 AA02 BA01 CA70 DD06 DD09 DD15 DD30 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 2G003 AA07 AE03 AG03 AG08 AG12 AG13 2G011 AA16 AA21 AB01 AB09 AC14 AC32 AE22 4M106 AA02 BA01 CA70 DD06 DD09 DD15 DD30
Claims (12)
極およびグラウンド電極とそれぞれ接触し、信号伝送路
およびその終端に接続されたコネクタにより外部計測器
へ高周波信号を伝送する高周波プローブにおいて、上記
信号伝送路となる信号線を可撓性の絶縁材料で覆い該絶
縁材料で構成される突出基板を上記高周波プローブ本体
から突出させて備え、該突出基板が、裏面をグラウンド
面とし、上記高周波デバイスの上記信号電極、上記グラ
ウンド電極にそれぞれ接触する信号用電極部、グラウン
ド用電極部を該突出基板先端部の表面に配するマイクロ
ストリップ構造であり、上記信号用電極部、上記グラウ
ンド用電極部を上記信号線、上記グラウンド面に、それ
ぞれ上記突出基板に設けたスルーホールを介して接続し
たことを特徴とする高周波プローブ。1. A high-frequency probe that contacts a signal electrode and a ground electrode of a high-frequency device, which is an object to be measured, respectively, and transmits a high-frequency signal to an external measuring instrument through a connector connected to a signal transmission path and its end. The signal line to be a transmission line is covered with a flexible insulating material, and a projecting substrate made of the insulating material is provided so as to project from the high frequency probe main body. The signal electrode, a signal electrode portion in contact with the ground electrode, a microstrip structure for arranging the ground electrode portion on the surface of the protruding substrate tip portion, the signal electrode portion, the ground electrode portion It is characterized in that the signal line and the ground plane are respectively connected through through holes provided in the protruding substrate. High frequency probe.
を突起電極で構成したことを特徴とする請求項１記載の
高周波プローブ。2. The high frequency probe according to claim 1, wherein the signal electrode portion and the ground electrode portion are formed by protruding electrodes.
された信号用電極部およびその周囲領域を除く突出基板
表面全体に形成したことを特徴とする請求項１記載の高
周波プローブ。3. The high frequency probe according to claim 1, wherein the ground electrode portion is formed on the entire surface of the protruding substrate except for the signal electrode portion formed of the protruding electrode and the peripheral region thereof.
面を、ビッカーズ硬度（Ｈｖ）４０を下らない金属膜で
コーティングしたことを特徴とする請求項２または３記
載の高周波プローブ。4. The high frequency probe according to claim 2, wherein the surface of the protruding electrode formed on the surface of the protruding substrate is coated with a metal film having a Vickers hardness (Hv) of 40 or less.
端子を、突出基板表面から突出させて設け、該接触端子
で突起電極を構成したことを特徴とする請求項２または
３記載の高周波プローブ。5. The high frequency probe according to claim 2, wherein a contact terminal made of a metal material is provided in the through hole so as to protrude from the surface of the protruding substrate, and the contact electrode constitutes a protruding electrode.
するスリットを設け、該スリットにより分断された一片
の表面に信号用電極部を配し、該信号用電極部と他片の
表面に形成されたグラウンド用電極部とを、高周波デバ
イスの上記信号電極、上記グラウンド電極にそれぞれ接
触させることを特徴とする請求項１〜５のいずれかに記
載の高周波プローブ。6. A protruding substrate is provided with a slit penetrating from the front surface to the back surface, the signal electrode portion is arranged on the surface of one piece divided by the slit, and the signal electrode portion and the other surface are provided. The high frequency probe according to any one of claims 1 to 5, wherein the formed ground electrode portion is brought into contact with the signal electrode and the ground electrode of the high frequency device, respectively.
て配設したことを特徴とする請求項６記載の高周波プロ
ーブ。7. The high frequency probe according to claim 6, wherein the signal line is arranged with a predetermined distance from the slit.
的に導通したデバイスステージを該高周波デバイスのグ
ラウンド電極として、突出基板に形成されたグラウンド
用電極部を上記デバイスステージに接触させることを特
徴とする請求項１〜７のいずれかに記載の高周波プロー
ブ。8. A device stage electrically connected to a ground electrode of a high frequency device is used as a ground electrode of the high frequency device, and a ground electrode portion formed on a protruding substrate is brought into contact with the device stage. The high frequency probe according to any one of Items 1 to 7.
かって徐々に幅が太くなる等応力構造であることを特徴
とする請求項１〜８のいずれかに記載の高周波プロー
ブ。9. The high frequency probe according to claim 1, wherein the protruding substrate has an equal stress structure in which the width gradually increases toward the main body side of the high frequency probe.
基板の裏面のグラウンド面上に、先端部に配した所定の
厚さの弾性体を介して補強金属板を設け、上記突出基板
先端部にて、該突出基板表面の信号用電極部、グラウン
ド用電極部を高周波デバイスの信号電極、グラウンド電
極にそれぞれ同時に接触させる際に発生する上記突出基
板の撓みを、上記弾性体で吸収させるようにしたことを
特徴とする高周波プローブ。10. A projecting substrate according to claim 1, wherein a reinforcing metal plate is provided on the ground surface of the back surface of the projecting substrate via an elastic body having a predetermined thickness and arranged at the tip end. The elastic body absorbs the bending of the protruding substrate that occurs when the signal electrode portion and the ground electrode portion on the surface of the protruding substrate are simultaneously brought into contact with the signal electrode and the ground electrode of the high-frequency device at the tip portion. The high-frequency probe characterized in that
検出する抵抗体からなるひずみゲージを設けたことを特
徴とする請求項１０記載の高周波プローブ。11. The high frequency probe according to claim 10, wherein the reinforcing metal plate is provided with a strain gauge made of a resistor for detecting the strain of the reinforcing metal plate.
記補強金属板先端部の変位を検出するレーザ変位計を、
上記補強金属板と離間させて設けたことを特徴とする請
求項１０記載の高周波プローブ。12. A laser displacement meter for detecting the displacement of the tip portion of the reinforcing metal plate is provided on the side of the reinforcing metal plate opposite to the protruding substrate.
The high frequency probe according to claim 10, wherein the high frequency probe is provided separately from the reinforcing metal plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001277515A JP4057265B2 (en) | 2001-09-13 | 2001-09-13 | High frequency probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001277515A JP4057265B2 (en) | 2001-09-13 | 2001-09-13 | High frequency probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003084010A true JP2003084010A (en) | 2003-03-19 |
| JP4057265B2 JP4057265B2 (en) | 2008-03-05 |
Family
ID=19102029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001277515A Expired - Fee Related JP4057265B2 (en) | 2001-09-13 | 2001-09-13 | High frequency probe |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4057265B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010060426A (en) * | 2008-09-03 | 2010-03-18 | Mitsubishi Electric Corp | Inspection jig |
| US7990165B2 (en) * | 2006-04-21 | 2011-08-02 | National Institute Of Advanced Industrial Science And Technology | Contact probe and method of making the same |
| CN104034924A (en) * | 2014-06-20 | 2014-09-10 | 邢辉 | Passage examination machinery accessory device under control of push rod |
| WO2023228487A1 (en) * | 2022-05-24 | 2023-11-30 | 株式会社村田製作所 | Measurement unit and measurement device |
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| JPS5931858B2 (en) * | 1976-11-24 | 1984-08-04 | 日本電気株式会社 | Semiconductor probe measuring device |
| JPS6276733A (en) * | 1985-09-26 | 1987-04-08 | テクトロニツクス・インコ−ポレイテツド | Wafer probe head |
| JPS63152141A (en) * | 1986-12-16 | 1988-06-24 | Nec Corp | Probe card |
| JP2001349903A (en) * | 2000-06-07 | 2001-12-21 | Noozeru Engineering Kk | High frequency probe |
-
2001
- 2001-09-13 JP JP2001277515A patent/JP4057265B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931858B2 (en) * | 1976-11-24 | 1984-08-04 | 日本電気株式会社 | Semiconductor probe measuring device |
| JPS5718334A (en) * | 1980-07-10 | 1982-01-30 | Nippon Telegr & Teleph Corp <Ntt> | Ic chip testing apparatus |
| JPS6276733A (en) * | 1985-09-26 | 1987-04-08 | テクトロニツクス・インコ−ポレイテツド | Wafer probe head |
| JPS63152141A (en) * | 1986-12-16 | 1988-06-24 | Nec Corp | Probe card |
| JP2001349903A (en) * | 2000-06-07 | 2001-12-21 | Noozeru Engineering Kk | High frequency probe |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7990165B2 (en) * | 2006-04-21 | 2011-08-02 | National Institute Of Advanced Industrial Science And Technology | Contact probe and method of making the same |
| US9134346B2 (en) | 2006-04-21 | 2015-09-15 | National Institute Of Advanced Industrial Science And Technology | Method of making contact probe |
| JP2010060426A (en) * | 2008-09-03 | 2010-03-18 | Mitsubishi Electric Corp | Inspection jig |
| CN104034924A (en) * | 2014-06-20 | 2014-09-10 | 邢辉 | Passage examination machinery accessory device under control of push rod |
| WO2023228487A1 (en) * | 2022-05-24 | 2023-11-30 | 株式会社村田製作所 | Measurement unit and measurement device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4057265B2 (en) | 2008-03-05 |
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