JP2003083867A - Physical property measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To allow the local measurement of physical property of a measuring matter such as semiconductor. SOLUTION: In this device, the physical property of the measuring matter is measured according to modulation spectroscopy by allowing the local modulation of the measuring matter by local application of electric field to the surface of the measuring matter, application of distortion, or irradiation with pulse-like light to detect a modulation signal (e.g. the reflected light from the measuring matter) generated by the modulation in the local region of the measuring matter.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a physical property measuring device, and more particularly to a physical property measuring device suitable for use in measuring the physical properties of a solid object such as a semiconductor.

[0002]

2. Description of the Related Art Conventionally, physical properties of semiconductors, for example,
It is known to measure the energy band structure and the like by modulation spectroscopy.

In such a physical property measuring apparatus using modulation spectroscopy, for example, an electrode is provided on a semiconductor as a measurement sample to apply an alternating electric field, or a piezo element is provided to apply distortion, or The semiconductor is modulated by irradiating the semiconductor with light in a pulsed manner. Then, by recording the change in the reflectance of the semiconductor due to the modulation as a function (spectrum) of the wavelength, the physical properties of the semiconductor as the measurement sample are measured.

However, in the conventional measuring apparatus for measuring the physical properties of semiconductors by such modulation spectroscopy,
Since an AC electric field or strain is applied to the entire semiconductor as a measurement sample or light irradiation is performed, only an average value of the entire measurement sample can be obtained, that is, measurement in a minute region of the measurement sample, that is, There is a problem that the local physical properties of the measurement sample cannot be measured.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and its object is to locally measure an object to be measured such as a semiconductor. An object of the present invention is to provide a physical property measuring device capable of measuring physical properties.

[0006]

In order to achieve the above-mentioned object, the present invention is to apply an electric field locally to the surface of an object to be measured, or to apply a strain, or to irradiate light in a pulsed manner. By modulating the object to be measured, the probe can be used to detect the modulation signal (for example, the reflected light from the object to be measured) generated by the modulation in the local region of the object to be measured. , Is based on the principle of measuring the physical properties of the object to be measured according to the modulation spectroscopy.

That is, the invention according to claim 1 of the present invention provides a probe for modulating the object to be measured in a local region of the object to be measured, and a modulation signal generated by the modulation of the object to be measured by the probe. And a detecting means for detecting.

Therefore, according to the first aspect of the present invention, the object to be measured is locally modulated by the probe, and the detection means detects the modulation signal generated by the modulation in the local region of the object to be measured. Therefore, the physical properties of the object to be measured can be measured according to the modulation spectroscopy.

According to the second aspect of the present invention, a probe for irradiating a local region of the object to be measured with light, and a reflected light of the light with which the probe irradiates the object to be measured. And a detection means for detecting a modulation signal generated by the modulation of the object to be measured.

According to a third aspect of the present invention, based on the probe which receives the light from the local region of the object to be measured and the light which is received by the probe,
It may be provided with a detection means for detecting a modulation signal generated by the modulation of the object to be measured.

According to a fourth aspect of the present invention, there is provided a probe for irradiating light to a local region of the object to be measured and receiving light from the local region of the object to be measured. , Detecting means for detecting a modulation signal generated by the modulation of the object to be measured based on the light received by the probe.

Further, in the invention according to any one of claims 1, 2, 3 and 4, like the invention according to claim 5 in the present invention, the probe is a tip. It may be made of an optical fiber whose portion is sharply pointed. By using such a probe, the object to be measured can be locally modulated by locally applying strain to the surface of the object to be measured or irradiating light.

Further, like the invention according to claim 6 of the present invention, in the invention according to claim 1, the probe may be made of a metal having a sharp tip. By using such a probe, it is possible to locally modulate the object to be measured by locally applying an electric field or applying a distortion to the surface of the object to be measured.

Further, in the invention according to any one of claims 1, 2, 3 and 4, like the invention according to claim 7 in the present invention, the probe is an outer periphery. It may be composed of an optical fiber whose side is coated with metal and whose tip is sharply pointed. By using such a probe, an electric field is locally applied to the surface of the object to be measured, or strain is applied, or
The object to be measured can be locally modulated by irradiating light with a pulse.

Further, in the invention according to any one of claims 1, 4, 6, and 7, the probe is the above-mentioned, like the invention according to claim 8 of the present invention. An electric field may be applied to a local area of the device under test to modulate the device under test.

Further, in the invention according to any one of claims 1, 4, 5, 6 or 7, like the invention according to claim 9 of the present invention, The probe may vibrate by contacting a local area of the object to be measured, and distort the local area to modulate the object to be measured.

Further, in the invention according to any one of claims 1, 5 and 7, like the invention according to claim 10 in the present invention, the probe is the object to be measured. The local area may be irradiated with light to modulate the object to be measured.

The detecting means may detect the reflected light from the object to be measured when the probe modulates the object to be measured, or the object to be measured when the probe modulates the object to be measured. The change in the absorption coefficient of the object may be detected, or the light emission of the measured object when the probe modulates the measured object may be detected.

According to a fourteenth aspect of the present invention, a light source for emitting light and an optical fiber having a sharply pointed tip with a metal coating on the outer peripheral side are provided. A probe for irradiating the surface of the object to be measured when the light is introduced, a power source for applying a voltage to the probe, and reflected light from the surface of the object to be measured received by the probe is applied to the probe. And a detecting means for detecting in synchronization with the frequency of the generated voltage.

The invention according to claim 15 of the present invention includes claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, and claim 8, In the invention according to any one of claims 9, 10, 11, 12, 13 and 14, the diameter of the substantially circular opening of the tip of the probe is 3 μm. This is done as follows.

In addition, the invention according to claim 16 of the present invention is claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, claim 8, and claim 8, In the invention according to any one of claim 9, claim 10, claim 11, claim 12, claim 13, claim 14 or claim 15, the probe is brought close to the surface of the object to be measured. A scanning means for scanning is provided.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an example of an embodiment of a physical property measuring apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic configuration explanatory view showing an example of an embodiment of a physical property measuring apparatus according to the present invention.

That is, FIG. 1 shows a conceptual configuration explanatory view of an example of an embodiment of a physical property measuring apparatus according to the present invention.
This physical property measuring device 10 includes a light source 12 that emits white light.
An optical fiber 16 into which the white light emitted from the light source 12 is condensed and introduced by the lens 14, a probe 20 into which the light beam emitted from the optical fiber 16 is condensed and introduced by the lens 18, and a probe 20. A measurement sample 100, which is a solid such as a semiconductor, arranged at opposing positions, and a probe 2 based on a predetermined signal.
A probe scanning drive device 22 that brings 0 into proximity to the surface 100a of the measurement sample 100 to scan the surface, a waveform generator 24 that outputs a predetermined signal (hereinafter referred to as “waveform signal”) to the probe 20, and the probe 20. The spectroscope 26 into which the reflected light from the measurement sample 100 received by is introduced, and the signal output from the spectroscope 26 (hereinafter referred to as “measurement signal”) is amplified in synchronization with the waveform generator 24. The lock-in amplifier 28 to be output and the surface 10 of the measurement sample 100 by processing the measurement signal output from the lock-in amplifier 28.
The control computer 30 outputs the change data of the reflectance at 0a and the like.

The above-mentioned control computer 30
Also controls the operation of the entire physical property measuring apparatus 10 including the processing of the control signal described above.

Further, in the present embodiment, the following description will be made assuming that a semiconductor having a quantum dot (QD) structure or a quantum well (QW) structure is used as the solid measurement sample 100.

Here, as shown in FIG.
Is formed by coating a metal 20b on the outer peripheral side of an optical fiber 20a having a sharpened tip 20c.

As the metal 20b, for example, gold (Au) or platinum (Pt) can be used.

The diameter R (see FIGS. 2 and 3 (a)) of the substantially circular opening at the tip of the metal 20b is 2 μm.
It is preferably ˜3 μm or less.

Therefore, the surface 100a of the measurement sample 100 is
The irradiation area of the white light emitted from the probe 20 is a substantially circular area having an effective diameter of about 300 nm, and the extremely local area of the surface 100 of the measurement sample 100 is irradiated with the white light. . Therefore, the light receiving area of the reflected light from the surface 100a of the measurement sample 100 in the probe 20 is also a substantially circular area having an effective diameter of about 300 nm, and the reflected light in the extremely local area of the surface 100 of the measurement sample 100 is The light is received by the probe 20.

In addition to the irradiation of white light and the reception of reflected light, a predetermined waveform signal is output from the waveform generator 24 to the probe 20. Therefore, a voltage corresponding to the waveform signal is applied to the probe 20, and the metal 20
The probe 20 having d is a waveform generator 24 that is an AC power source.
As an electrode of, the electric field can be applied to a very local region of the surface 100 of the measurement sample 100.

The frequency of the waveform signal output from the waveform generator 24 is controlled by the control computer 30.

As the probe scanning driving device 22, for example, a general STM driving device or AFM driving device can be used.

Reflected light received by the probe 20 is introduced into the spectroscope 26, and a measurement signal obtained by spectrally detecting the reflected light is output to the lock-in amplifier 28. The spectroscope 26 includes a photomultiplier tube (PMT) for transmitting a measurement signal or an avalanche photodiode (A).
PD), CCD, or the like may be provided.

In the above structure, in order to measure the physical properties of the measurement sample 100 using the physical property measuring device 10, first, the probe 20 is driven by the probe scanning driving device 32 to scan the surface 100a of the measurement sample 100, The tip portion 20c of the probe 20 is opposed to a predetermined position on the surface 100a of the measurement sample 100. At this time, the tip portion 20c of the probe 20 is positioned so as to have a predetermined distance H (for example, 0.1 nm to 10 nm) from the surface 100a of the measurement sample 100.

Then, the surface 100a of the measurement sample 100 is measured.
To the probe 20 facing a predetermined position of the probe 20, a predetermined waveform signal is output from the waveform generator 24,
A voltage corresponding to the waveform signal is applied to 0. As a result, the measurement sample 100 in which the tip portion 20c of the probe 20 faces
Surface 100a, that is, the surface 100a of the measurement sample 100
The electric field is applied to the extremely local area of the
Only a very local area of the 00 surface 100a is modulated.

In this way, the measurement sample 10 is measured by the probe 20.
The white light is emitted from the light source 12 while modulating the extremely local area of the surface 100a of 0, and the emitted white light is condensed by the lens 14 and introduced into the optical fiber 16.

Further, the white light introduced into the optical fiber 16 is emitted from the optical fiber 16, condensed by the lens 18, and introduced into the probe 20.

The white light thus introduced into the probe 20 is directed from the tip portion 20c of the probe 20 facing the surface 100a of the measurement sample 100 with a predetermined distance H toward the surface 100a of the measurement sample 100. Irradiated (Fig. 3
(See dashed arrow in (a)).

Here, in the probe 20, for example, the white light is emitted only from the tip portion 20c having the diameter R of 2 μm to 3 μm, and therefore, the effective surface 100a of the measurement sample 100 facing the probe 20 is effective. The white light is emitted only to a substantially circular local region having a typical diameter of about 300 nm.

Then, the surface 100 of this measurement sample 100
The reflected light only from the local area irradiated with the white light in a is received by the probe 20 (see the dashed arrow in FIG. 3B).

That is, the probe 20 serves as an electrode of the waveform generator 24 and is modulated by applying an electric field.
White light is locally emitted from the tip portion 20c of the probe 20 to a very local region of the surface 100 of the probe 20, and the reflected light of the emitted white light is received by the probe 20.

The reflected light from the surface 100a of the measurement sample 100 thus received by the probe 20 is introduced into the spectroscope 26. Then, in the spectroscope 26, the measurement sample 1
A measurement signal obtained by spectrally detecting the reflected light from the surface 100 a of No. 00 is output to the lock-in amplifier 28.

When the measurement signal output from the spectroscope 26 is input to the lock-in amplifier 28, the measurement signal is amplified in synchronization with the frequency of the waveform signal output from the waveform generator 24 to the probe 20, and the control computer 30 receives the amplified signal. Is output.

In the control computer 30, the input measurement signal is processed to calculate change data of reflectance on the surface 100a of the measurement sample 100 and the like.

As described above, in the physical property measuring apparatus 10 according to the present invention, the measurement sample 1 is measured by the probe 20.
Since the electric field is applied only to a local region on the surface 100a of the measurement sample 100, the measurement sample 100 is locally modulated, and the modulated surface 10 of the measurement sample 100.
Based on the reflected light from the local region of 0a, the local physical properties of the solid measurement sample 100 such as a semiconductor can be measured according to the modulation spectroscopy.

In the physical property measuring apparatus 10 according to the present invention, the probe 20 is the surface 100a of the measurement sample 100.
With a predetermined distance H (see FIG. 3 (a)), an electric field can be applied to a very local region of the surface 100a of the measurement sample 100 to modulate it, so that the electrodes can be applied to the surface of the measurement sample 110. It is not necessary to dispose directly on 100a. Therefore, according to the physical property measuring apparatus 10 of the present invention, it is possible to measure the physical properties of a measurement sample in which electrodes are difficult to attach, for example, a measurement sample in which a thin film such as a single molecule is formed on a substrate.

Further, in the physical property measuring apparatus 10 according to the present invention, the probe 20 applies an electric field to the measurement sample 100.
Function as an electrode that modulates the light, and performs irradiation of white light for measuring the change in the reflectance of the modulated DUT 100 and reception of the reflected light. Since it is not necessary to separately provide a means for measuring the change in reflectance of the measurement sample due to, it is possible to realize simplification of the device, cost reduction, and downsizing of the entire device.

Furthermore, the physical property measuring apparatus 1 according to the present invention
In 0, the probe 20 can be scanned by the probe scanning driving device 32 over the entire surface 100a of the measurement sample 100. Therefore, the probe scanning drive device 32 moves the probe 20 so that the position where the tip portion 20c of the probe 20 faces is changed for each extremely local region of the surface 100a of the measurement sample 100, and the measurement is performed. It is possible to perform mapping of physical property values over the entire surface 100a of the sample 100. Moreover,
The mapping result of the physical property values obtained in this manner is highly accurate because it is the accumulation of the measurement results of the physical properties in each extremely local region by the probe 20.

Further, in the physical property measuring apparatus 10 according to the present invention, by using the probe 20 as a nanoprobe, another measurement different from the physical property measurement can be performed. For example, comparison of photoluminescence or tunnel current can be performed. You can also compare and control the size of.

The above-described embodiment can be modified as described in (1) to (6) below.

(1) In the above-described embodiment, the electric field is applied by the probe 20 to the extremely local region of the surface 100a of the measurement sample 100 so that the measurement sample 100 is modulated. It is needless to say that the measurement sample 100 is not limited by the probe 20.
May be applied to the measurement sample 100, or the probe 20 may irradiate the measurement sample 100 with a laser beam so that the probe 20 modulates only a very local region of the surface 100a of the measurement sample 100. .

Specifically, as shown in FIG. 4A, the probe scanning driving device 32 causes the probe 20 to scan along the surface 100a of the measurement sample 100, and the tip 20c of the probe 20 is measured. Surface 10 of 100
It is brought into contact with a predetermined position of 0a. Thus measurement sample 1
Probe 20 in contact with the surface 100a of 00
By vibrating, the strain can be applied only to a very local region of the surface 100a of the measurement sample 100 with which the probe 20 is in contact.

When the measurement sample 100 is modulated by applying a strain by the probe 20, it is not necessary to apply an electric field to the measurement sample 100 by the probe 20, and therefore the probe 20 is not limited to the above-described embodiment. In addition, for example, as shown in FIGS. 5A and 5B, a probe composed of an optical fiber whose tip is sharply sharpened without metal coating on the outer peripheral side (FIG. 5A)
Alternatively, a probe formed of a hollow metal tip like an injection needle with a sharply pointed tip (see FIG. 5B) can be used.

On the other hand, the measurement sample 100 is measured by the probe 20.
The surface 10 of the measurement sample 100 is irradiated with a pulsed light on the surface.
In the case of modulating only the extremely local area of 0a, for example, the laser light output from the laser is interrupted by the chopper, and the interrupted laser light is condensed by the lens and introduced into the probe 20. To do so.

As a result, instead of the continuous light being emitted from the probe 20, the pulse laser light (see the solid line arrow in FIG. 4B) is intermittently emitted from the probe 20. Depending on the intermittent frequency of such pulsed laser light, it is possible to modulate only a very local region of the surface 100a of the measurement sample 100 facing the probe 20.

At this time, the change in the reflectance of the DUT 100 that has been modulated is measured on the surface 100a of the measurement sample 100 in which only a very local region is modulated by the laser light emitted from the probe 20. The surface 1 of the measurement sample 100 is irradiated with the white light (see the dashed arrow in FIG. 4B) for
The reflected light from 00a (see the broken line arrow in FIG. 4B) is changed to be received by the light receiving means other than the probe 20.

As described above, the light (that is, the laser light emitted from the probe 20) is used for modulation of the measurement sample 100, and the light (that is, other than the probe 20) is also used for measuring the change in reflectance. (White light emitted from)
The physical properties can be measured in the physical property measuring apparatus 10 according to the present invention also by the photoreflectance method (which is a kind of modulation spectroscopy) using the.

When the measurement sample 100 is modulated by irradiating the laser light with the probe 20, it is not necessary to apply an electric field to the measurement sample 100 by the probe 20, and therefore the probe 20 in the above-described embodiment.
The present invention is not limited to this, and for example, as shown in FIG. 5A, a probe formed of an optical fiber having a sharply pointed tip end not coated with metal on the outer peripheral side may be used.

(2) In the above-described embodiment, the measurement sample 1 in which the probe 20 locally modulates by applying an electric field.
No. 00 surface 100a is irradiated with white light (see light A for measurement shown in FIG. 6A) and its reflected light (light B for measurement shown in FIG. 6A) is irradiated. Although the probe 20 receives the light A), the light A for measurement such as white light and the light B for measurement such as reflected light are not limited to this. Irradiation or light reception may be performed by means other than the probe.

Specifically, as shown in FIG. 6B, light A for measurement (that is, white light) is emitted from the probe, while light B for measurement (that is, reflected light) is emitted. Even when the probe does not receive light but receives it by another light receiving means, the region where the probe irradiates the measurement light A is a local region on the surface of the measurement sample, and therefore the local physical property of the measurement sample is measured. can do.

Further, as shown in FIG. 6C, the light A for measurement (that is, white light) is not emitted from the probe but is emitted by another irradiation means, and the light B for measurement (ie, white light) is emitted. ,
Even when the probe receives (reflected light), the probe receives the light B for measurement from a local region on the surface of the measurement sample, so that the local physical property of the measurement sample can be measured.

Further, as shown in FIG. 6 (d), the light A for measurement (that is, white light) is not emitted from the probe but is emitted by another irradiation means, and the light B (for measurement) is emitted. That is, even when the probe does not receive the reflected light) by another light receiving means, the probe modulates only a local region on the surface of the measurement sample by applying the electric field, and thus the measurement sample 100 Local physical properties can be measured.

Here, in the state shown in FIG. 6D, the light for modulation (that is, laser light) is emitted from the probe as described in (1) above with reference to FIG. 4B.
Is applied to measure the local physical properties of the measurement sample by the photoreflectance method.

Further, as described with reference to FIG. 4B, even when only the extremely local region of the surface 100a of the measurement sample 100 is modulated by applying the strain to the measurement sample 100 by the probe 20, As in the case where the probe applies an electric field, various types of measurement shown in FIGS. 6A to 6D are possible.

Further, FIGS. 6 (a), 6 (b) and 6 (c)
In any of the cases, the region where the probe irradiates the light A for measurement is a local region on the surface of the measurement sample, or the probe is used for measurement from the local region on the surface of the measurement sample. The light B is received. Therefore, the local physical properties of the measurement sample can be measured even when an AC electric field or strain is applied to the entire measurement sample, or when light irradiation is performed (FIG. 7).
(See (a) (b) (c)).

(3) In the above-described embodiment, the surface 1 of the measurement sample 100 received by the probe 20.
Although the reflected light from 00a is dispersed in the spectroscope 26, the spectroscope 26 is not limited to this, and the spectroscope 26 may be disposed in the front stage of the probe 20 so that the light source 12 emits light. After the emitted white light is separated by the spectroscope 26, the separated light may be introduced into the probe 20.

Further, monochromatic light may be emitted from the light source 12 without disposing the spectroscope 26 in the physical property measuring apparatus 10. That is, the light source 12 is not limited to a light source that emits white light, but a light source that emits monochromatic light, a light source that emits continuous wave laser light, a light source that emits modulated modulated light, or the like is used. You can In response to such a change in the light source, white light, monochromatic light, continuous light, modulated light, or the like is introduced into the probe 20, and these various lights are extremely locally applied to the surface 100 of the measurement sample 100 by the probe 20. Is irradiated to a large area.

(4) Although the measurement sample 100 is a semiconductor in the above-mentioned embodiment, it is needless to say that it is not limited to this, and the physical property measuring apparatus 1 according to the present invention is not limited to this.
At 0, it is possible to measure the physical properties of the object to be measured such as various solids such as insulators, organic thin films, and metals, or molecules adsorbed on the substrate (surface adsorbed molecules). At this time, various changes such as applying an electric field or applying a strain to the measured object by the probe 20 may be performed according to the type of the measured object.

(5) In the above-described embodiment, the physical properties are measured by detecting the change in reflectance on the surface 100a of the measurement sample 100.
Of course, the present invention is not limited to this, and for example, the physical properties can be measured according to the modulation spectroscopy by detecting the change of the absorption coefficient on the surface 100a of the measurement sample 100 or the change of the light emission. .

That is, reflected light, absorption, or light emission may be detected as the modulation signal generated by the measurement sample being modulated by the probe. Further, the detection of such a modulation signal may be performed synchronously or may be frequency selected.

Further, the present invention is not limited to the detection of the change in reflectance on the surface 100a of the measurement sample 100, and depending on the type of measurement sample and the type of modulation signal,
You may make it detect the change of the reflectance etc. of the interface in the lower layer than the surface of a measurement sample.

(6) The above-described embodiments and the modifications described in (1) to (5) above may be combined appropriately.

[0074]

Since the present invention is configured as described above, it has an excellent effect that it becomes possible to measure local physical properties of an object to be measured such as a semiconductor.

[Brief description of drawings]

FIG. 1 is a conceptual configuration explanatory diagram of an example of an embodiment of a physical property measuring apparatus according to the present invention.

FIG. 2 is an enlarged schematic cross-sectional explanatory view of a probe.

3A and 3B are enlarged schematic cross-sectional explanatory views of a tip portion of a probe, FIG. 3A is an explanatory view showing white light emitted from the probe, and FIG. 3B is an explanatory view showing white light received by the probe. Is.

FIG. 4 is an enlarged schematic cross-sectional explanatory view of a tip portion of a probe showing another example of the embodiment of the physical property measuring device according to the present invention, and FIG. FIG. 3B is an explanatory diagram showing a case where a measurement sample is irradiated with laser light by a probe.

FIG. 5 is an enlarged schematic cross-sectional explanatory view of a probe showing another example of the embodiment of the physical property measuring apparatus according to the present invention, FIG.
FIG. 4B is an enlarged schematic cross-sectional explanatory view of a probe formed of an optical fiber whose tip is sharply sharpened without a metal coating on the outer peripheral side, and FIG. FIG. 3 is an enlarged schematic cross-sectional explanatory view of a probe made of.

FIG. 6 is an explanatory view schematically showing various types of different measurements in the physical property measuring device according to the present invention, and FIG. 6 (a) is an explanatory view showing a case where a probe irradiates and receives light for measurement. Yes, (b) is an explanatory view showing a case where the probe only emits light for measurement, and (c) is an explanatory diagram showing a case where the probe only receives light for measurement, (D) is an explanatory view showing a case where the probe neither irradiates or receives light for measurement.

7 (a), (b) and (c) are explanatory views showing another example of the embodiment of the physical property measuring apparatus according to the present invention.

[Explanation of symbols]

10 Physical property measuring device 12 light sources 14,18 lenses 16 optical fiber 20 probes 20a optical fiber 20b metal 20c tip 22 Probe scanning drive 24 waveform generator 26 spectroscope 28 Lock-in amplifier 30 control computer 100 measurement samples 100a surface

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Katsunori Aoyagi             2-1, Hirosawa, Wako-shi, Saitama RIKEN             Within (72) Inventor Satoshi Tobita             2-1, Hirosawa, Wako-shi, Saitama RIKEN             Within (72) Inventor Koji Maeda             1-19-19 Jiyugaoka, Meguro-ku, Tokyo F-term (reference) 2G059 AA05 BB08 BB16 EE02 EE06                       FF01 GG01 GG08 JJ01 JJ11                       JJ17 KK01 KK02 KK04

Claims (16)

[Claims] 1. A physical property measuring apparatus comprising: a probe that modulates an object to be measured in a local region of the object to be measured; and a detection unit that detects a modulation signal generated by the modulation of the object to be measured by the probe. 2. A probe for irradiating light to a local region of the object to be measured, and a modulation signal generated by modulation of the object to be measured is detected based on reflected light of the light with which the probe irradiates the object to be measured. And a physical property measuring device having a detecting means. 3. A physical property having a probe for receiving light from a local region of the object to be measured, and detection means for detecting a modulation signal generated by the modulation of the object to be measured based on the light received by the probe. measuring device. 4. A probe for irradiating a local area of the object to be measured with light and receiving light from the local area of the object to be measured, and the object to be measured based on the light received by the probe. A physical property measuring device having a detecting means for detecting a modulated signal generated by the modulation. 5. The physical property measuring device according to claim 1, 2, 3, or 4, wherein the probe is an optical fiber having a sharply pointed tip. measuring device. 6. The physical property measuring device according to claim 1, wherein the probe is made of a metal having a sharp tip. 7. The physical property measuring apparatus according to claim 1, 2, 3, or 4, wherein the probe has a metal tip coated on the outer peripheral side and a sharpened tip. A physical property measuring device consisting of an optical fiber. 8. The physical property measuring apparatus according to claim 1, 4, 6, or 7, wherein the probe applies an electric field to a local region of the object to be measured. A physical property measuring device that modulates an object to be measured. 9. The physical property measuring device according to claim 1, 4, 5, 6, or 7, wherein the probe touches a local region of the object to be measured. A physical property measuring device which vibrates in contact with each other and applies strain to the local region to modulate the measured object. 10. The physical property measuring device according to claim 1, wherein the probe irradiates a local region of the object to be measured with light and the object to be measured. A physical property measuring device that modulates. 11. The method according to claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, claim 8, claim 9, or claim 10. In the physical property measuring apparatus as described above, the detecting means detects the reflected light from the measured object when the probe modulates the measured object. 12. The method according to claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, claim 8, claim 9, or claim 10. In the physical property measuring apparatus as described above, the detecting unit detects a change in absorption coefficient of the measured object when the probe modulates the measured object. 13. The method according to claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, claim 8, claim 9, or claim 10. In the physical property measuring apparatus as described above, the detecting unit detects the light emission of the measured object when the probe modulates the measured object. 14. A light source which emits light, and an optical fiber whose outer peripheral side is coated with a metal and whose tip portion is sharply pointed. A probe for irradiating the probe, a power source for applying a voltage to the probe, and a detection means for detecting the reflected light from the surface of the DUT received by the probe in synchronization with the frequency of the voltage applied to the probe. And a physical property measuring device having. 15. A claim 1, a claim 2, a claim 3, a claim 4, a claim 5, a claim 6, a claim 7, a claim 8, a claim 9, a claim 10, a claim 11, and a claim. Item 12, claim 1
The physical property measuring apparatus according to claim 3 or 14, wherein the diameter of the substantially circular opening of the tip of the probe is 3
A physical property measuring device having a size of μm or less. 16. Claim 1, Claim 2, Claim 3, Claim 4, Claim 5, Claim 6, Claim 7, Claim 8, Claim 9, Claim 10, Claim 11, and Claim 6. Item 12, claim 1
3. The physical property measuring device according to claim 1, wherein the probe has a scanning unit that scans the probe by bringing the probe close to the surface of the object to be measured.