JP2003077877A - Wafer sheet type polishing and cleaning equipment, and polishing method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide wafer sheet type polishing and cleaning equipment and a method using the equipment wherein sheet system polishing and cleaning of wafers are enabled continuously, and wafers having high degree of cleaning can be manufactured, and working history control of the wafers can be conducted easily. SOLUTION: This wafer sheet type polishing and cleaning equipment and a method using the equipment are provided with a sheet type polishing device 10 which polishes wafers W one by one, a sheet type cleaning device 20 which is arranged continuously with the sheet type polishing device 10 and cleans the wafers one by one, and an ID reading means 30 which reads in an ID mark m arranged on the wafer W to be treated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer polishing / cleaning facility and a polishing / cleaning method using the same, and more particularly to a polishing / cleaning facility in which a polishing device and a cleaning device are integrally formed and equipped with an ID reading means. The polishing cleaning method used.

[0002]

2. Description of the Related Art Conventionally, polishing and cleaning of semiconductor wafers have been carried out using separate polishing and cleaning devices. However, in recent years, with the demand for larger diameters and improved quality of wafers, a semiconductor wafer polishing apparatus is often used for polishing and cleaning semiconductor wafers. The CMP apparatus, which is widely used as the above, employs equipment in which polishing and cleaning are integrated.

However, the conventional apparatus that combines polishing and cleaning can clean the wafer continuously after polishing, but is equipped with a reader for reading the ID mark (wafer identification information) of the cleaned wafer. Therefore, it is difficult to manage the processing history of wafers produced in large quantities one by one. Wafer processing history management is very important for controlling the wafer manufacturing process. Further, since the single wafer processing apparatus processes the wafers one by one, it is possible to change the wafer processing method for each wafer. Therefore, the reading apparatus that can easily manage the wafer processing history is a single wafer processing apparatus. It is of great importance in processing systems. Further, even in the case of the processing apparatus in which the polishing apparatus and the cleaning apparatus are integrated as described above, in many cases, the cleaning apparatus has a simple structure because of the throughput relationship between the polishing apparatus and the cleaning apparatus, and sufficient cleaning cannot be performed. It was difficult to obtain a high wafer.

[0004]

Therefore, wafer single-wafer polishing capable of continuously performing single-wafer polishing and cleaning of wafers to produce highly clean wafers and easily managing wafer processing history. Cleaning equipment was requested. Further, there has been a demand for a wafer single-wafer polishing / cleaning method capable of continuously performing single-wafer polishing and cleaning of wafers to manufacture highly clean wafers and easily managing wafer processing history.

The present invention has been made in consideration of the above-mentioned circumstances. It is possible to continuously perform single-wafer polishing and cleaning of wafers to manufacture wafers with high cleanliness and to easily manage wafer processing history. It is an object of the present invention to provide a wafer single-wafer polishing / cleaning facility. Further, it is an object of the present invention to provide a wafer single-wafer polishing cleaning method capable of continuously performing single-wafer polishing and cleaning of wafers to manufacture highly clean wafers, and easily managing wafer processing history. To do.

[0006]

In order to achieve the above object, a single-wafer polishing / cleaning equipment of the present invention includes a single-wafer cleaning apparatus continuously arranged in a single-wafer polishing apparatus, and the single-wafer cleaning apparatus. It is characterized in that an ID mark provided on a wafer processed by the cleaning apparatus is read, and a reading sensor has an ID reading unit provided on the wafer unloading side of the single wafer cleaning apparatus.

Further, the single-wafer cleaning apparatus of the present invention is preferably provided with a brush cleaning unit and two spin cleaning units.

Further, in order to achieve the above object, in the single-wafer polishing cleaning method of the present invention, a wafer in a dry state is supplied to a single-wafer polishing apparatus, polished, washed with cleaning water and wet. It is characterized in that the ID mark is read after carrying in a state and brush cleaning, and further carrying in a wet state and performing spin cleaning to a dry state.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a single-wafer polishing / cleaning facility according to the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a conceptual diagram of a wafer single-wafer polishing / cleaning facility according to the present invention, and FIG. 2 is a block diagram of its control system.

As shown in FIG. 1, a wafer single-wafer polishing cleaning equipment 1 includes a single-wafer polishing apparatus 10 and a single-wafer cleaning apparatus 2.
0 and ID reading means 30.

The single-wafer polishing apparatus 10 is a commonly used chemical mechanical polishing apparatus (CMP). The single-wafer polishing apparatus 10 includes a head assembly 11, a table assembly 12, and a polishing slurry supply means 13. It consists of

Three head assemblies 11 are provided,
The upper rotary shaft 14 and the upper rotary shaft 14 are rotated as shown in FIG.
And a top ring 15 attached to the upper rotary shaft 14, and an attachment plate 16 attached to the top ring 15. Wax w is used for the attachment plate 16. Alternatively, two semiconductor wafers W are attached without using wax.

The table assembly 12 includes a turntable 17
2, a turntable rotating means shown in FIG. 2 for rotating the turntable 17, and a polishing pad 18 attached to the turntable 17.

The polishing slurry supplying means 13 is for constantly supplying the polishing slurry to the polishing pad 18. For example, in the case of polishing a silicon wafer, a silica-dispersed sodium hydroxide solution is used and the silicon surface is N
By reacting with aOH to form a reaction product, a Na ₂ SiO ₃ layer, which is removed by mechanical polishing with silica and a polishing pad, and a new silicon surface is exposed to allow the reaction to proceed. Is highly accurately flattened.

The single-wafer cleaning device 20 is arranged in an L-shape with the single-wafer polishing device 10. This arrangement does not necessarily have to be L-shaped, but the L-shaped arrangement can save the installation space.

Further, in the single-wafer cleaning apparatus 20, after the polishing is completed, the wafer W is inverted and conveyed so that the polishing surface is facing up, and the conveyance robot is controlled by the conveyance robot driving means shown in FIG. , Edge handling robot 21
And a first delivery unit 22 for receiving the wafer W from the edge handling robot 21. The first delivery unit 22 has a two-stage shelf 22a and
A fountain nozzle 22b is provided, which is controlled by the cleaning water supply means shown in FIG.

In the single wafer cleaning device 20, a pair of brush cleaning units 23 made of, for example, polyvinyl alcohol (PVA) for cleaning the both surfaces of the wafer W with brushes, and the rotation speed of the brush cleaning unit 23 are controlled. 2 has a brush rotating means and a second delivery unit 24 for delivering the wafer W between the brush cleaning unit 23 and the first delivery unit 22. The second delivery unit 24 is provided with a multi-tiered shelf 24a and a fountain nozzle 24b which is controlled by the cleaning water supply means shown in FIG.

Further, between the brush cleaning unit 23 and the second delivery unit 24, the shelf 22 of the first delivery unit 22 is provided.
The wafer W on a is transferred to the brush cleaning unit 23,
A transfer robot 25 that transfers the wafer W cleaned by the brush cleaning unit 23 to the shelf 24 a of the second delivery unit 24 is provided.

Further, the single wafer cleaning apparatus 20 is provided with two spin cleaning units 26. The two spin cleaning units 26 are provided on the rotary shaft 26a and are shown in FIG.
The spin table 26b controlled by the spin table rotating means shown in FIG. 4 and the wafer W fixedly mounted on the spin table 26b are sprayed with ozone water and an HF aqueous solution, and controlled by the cleaning water supply means shown in FIG. And a gas nozzle 26 controlled by the gas supply means shown in FIG. 2 by spraying nitrogen gas while rotating the spin table 26b to dry the wafer W.
and d.

Further, a traveling transport robot 27 facing the two spin cleaning units 26 and controlled by the transport robot driving means shown in FIG. 2 is provided, and further, a second delivery unit 24 of the traveling transport robot 27 is provided. A third delivery unit 28 including a shelf 28a is provided on the opposite side. The traveling and transporting robot 27 has one hand 27a.
That is, the wafer W placed on the multi-level shelf 24a is transferred to the spin table 26b using a hand dedicated to wet wafer transfer, and further traveled on the traveling path 27b to remove the wafer W dried by the spin cleaning unit 26. The other hand 27c is used to place the spin table 26b on the multistage shelf 28a of the third delivery unit 28.

In the present embodiment, the two spin cleaning units have the same chemical composition, but they may be competition units using different chemical solutions, and the two spin cleaning units are installed on the same side. Instead, they may be installed symmetrically with respect to the traveling and transport robot. In either case, the throughput of cleaning can be improved by providing two spin cleaning units.

Further, the wafer single-wafer polishing / cleaning equipment 1 is provided with the ID reading means 30.
The reading means 30 comprises an ID sensor 31 for detecting an ID number I formed on the peripheral portion of the wafer W and an ID reading circuit shown in FIG. In addition, a fourth delivery unit 32 that stores the wafer W after the ID mark m is read and is composed of a shelf 32a is provided. The fourth delivery unit 32 and the third delivery unit 27 are provided with a transfer robot 33 controlled by the transfer robot driving means shown in FIG.
This transfer robot 33 is provided on the shelf 2 of the third delivery unit 28.
The wafer W placed on the 8a is unloaded, and the wafer W is stopped at a position facing the ID sensor 31 at an intermediate position.
After the detection of the mark m is completed, the wafer W is transferred onto the shelf 32 a of the fourth delivery unit 32.

Further, as shown in FIG. 2, the wafer single-wafer polishing / cleaning equipment 1 is provided with a computer 40, which stores programs for performing various kinds of processing. Slurry supply means,
The turntable rotating means for controlling the rotation of the table assembly 12, the rotating means for controlling the rotation of the head assembly 11, and the pressurizing means for controlling the pressing force are controlled to control the polishing apparatus 10.

Further, the fountain nozzle 2 of the single-wafer cleaning device 20.
2b, the fountain nozzle 24b and the fountain nozzle 26c, the cleaning water supply means for controlling the flow rate, the brush rotating means for controlling the rotation speed of the brush cleaning unit 23, the spin table 26b.
The single-wafer cleaning apparatus is controlled by controlling the spin table rotating means for controlling the number of rotations, the gas supply means for controlling the gas ejection amount of the gas nozzle 26d, and the transfer robot driving means for controlling the transfer robots 21, 25, 27, 33. 20 is controlled.

Further, the ID mark m of the wafer W connected to the ID sensor 31 and read is the computer 4
0 is stored in the table memory.

Next, a method of polishing and cleaning a semiconductor wafer using the wafer single wafer type polishing and cleaning equipment according to the present invention will be described.

FIG. 3 is a flow chart of the wafer single-wafer polishing / cleaning method according to the present invention, and description will be given along this flow chart.

A wafer stored in the cassette C and etched or polished in the previous step is set in the loader section of the polishing apparatus.

The wafer W is taken out from the cassette and mounted with the surface thereof facing downward on the mounting plate 15 of the single-wafer polishing apparatus 10 using wax w. It should be noted that this attachment may be performed by using an arm robot, may be performed manually by an operator, and wax may or may not be used.

When the wafer W is mounted on the mounting plate 15 and the completion of mounting is input to the computer 40, the computer 40 controls the polishing slurry supply means 13 to supply the slurry to the polishing pad 18, as shown in FIG. Then, the turntable rotating means is controlled to rotate the turntable 17 and the polishing pad 18, the rotating means is controlled to rotate the wafer W mounted on the mounting plate 16, and the pressing means is controlled to mount the wafer W. The plate 16 and the wafer W are lowered, and the wafer W is pressed against the polishing pad 18 moistened with the slurry.

The wafer W is chemically polished and mechanically polished by the slurry and the polishing pad 18 (ST1).

When the polishing is completed, the computer 40 controls the transfer robot driving means to cause the edge handling robot 21 to polish and hydrophilize the wafer W.
Are reversed so that the polishing surface faces upward, and they are transferred and placed one by one on the two-stage shelf 22a of the first delivery unit 22. When the wafer W placed on the shelf 22a is placed, the computer 40 controls the washing water supply means to eject the ozone water from the fountain nozzle 22b for a predetermined time to cause the wafer W to flow.
(ST2).

In this step, organic substances on the surface of the wafer W are removed, and the wafer W is made hydrophilic.

When the ozone cleaning is completed, the computer 4
The transfer robot driving means is controlled by 0 to transfer the ozone-cleaned wafers W one by one to the brush cleaning unit 23 by the transfer robot 25. When the wafer W is transferred to the brush cleaning unit 23, the brush rotating unit 23 is controlled by the computer 40 controlling the brush rotating means.
Rotate and wash with a brush. In this step, dust such as abrasives remaining on the front and back surfaces of the wafer W is removed (ST3).

When the brush cleaning is completed, the computer 4
0 again controls the transfer robot driving means to transfer the wafer W to the brush cleaning unit 23 by the transfer robot 25.
From the second transfer unit 24 to the shelf 24a.

When the wafer W is transferred to the shelf 24a, the transfer robot driving means is controlled by the computer 40 to use one hand 27a of the traveling transfer robot 27 to wet the wafer W into two spin cleaning units. 26
It is fixedly mounted on the spin table 26b. When the wafer W is placed on the spin table 26b, the spin table rotating means is controlled by the computer 40 to rotate the spin table 26b, and the cleaning water supply means is controlled to discharge the ozone water and the HF aqueous solution from the fountain nozzle 26c for a predetermined time. Is sprayed on the surface of the wafer W to spin-clean it. When the spin cleaning is completed, the computer 40 controls the gas nozzle 26d by the gas supply means to spray nitrogen gas on the wafer W to spin dry it (ST4).

In this step, it is possible to remove dust and metal impurities existing in the oxide film. It should be noted that the treatment is not limited to the ozone water and the HF aqueous solution, and the functional water and the chemical solution may be used for the treatment. When the spin cleaning is completed,
The other hand 27c of the traveling / transporting robot 27, that is, the hand dedicated to transporting the dry wafer, is used to transfer the wafer W from the spin table 26b to the third delivery unit 28.
To the multi-tiered shelves 28a.

The wafer W in the dry state is unloaded from the shelf 28a by the transfer robot 33 by controlling the transfer robot driving means by the computer 40.
That is, the wafer W is stopped at a position facing the ID sensor 31, the ID mark m is detected by the ID sensor 31, and then the wafer W is transported and placed on the shelf 32a of the fourth delivery unit 32 (ST5). ).

In this step, the ID mark m provided on the wafer W in the dry state processed by the single-wafer polishing apparatus 10 and the single-wafer cleaning apparatus 20 is read and stored in the table memory of the computer 40. I of wafer W in dry state
Since the D mark m is read, the reading is easy and reliable.

The wafer W is managed, sorted and stored for each processing history (ST6).

To manage the wafer W, the ID mark m stored in the table memory is used. The dry wafer W that has been polished and placed on the shelf 32a is unloaded by the unloader.

In the polishing / cleaning step, since the single-wafer polishing apparatus 10 and the single-wafer cleaning apparatus 20 are continuously arranged, the single-wafer polishing and cleaning of the wafer can be continuously performed and the cleanliness is high. Wafers can be manufactured. Further, since the ID reading means 30 for reading the ID mark m provided on the wafer W processed by the single-wafer polishing apparatus 10 and the single-wafer cleaning apparatus 20 is provided, the ID mark m is stored and utilized. By doing so, the processing history of the wafer W can be easily managed. Further, in the cleaning process, the wafer W is always transferred in a wet state, so that the wafer W can be kept in a high cleanliness state.

[0044]

According to the wafer single-wafer polishing / cleaning equipment according to the present invention, wafer single-wafer polishing and cleaning can be continuously performed to manufacture a wafer with high cleanliness, and wafer processing history management It is possible to provide a wafer single-wafer polishing / cleaning facility that can easily perform the above.

Further, according to the wafer single-wafer polishing / cleaning method according to the present invention, wafer single-wafer polishing and cleaning can be continuously performed to manufacture a wafer with high cleanliness, and wafer processing history management It is possible to provide a wafer single-wafer polishing cleaning method that can easily perform the above.

Further, an ID reading means for reading the ID mark provided on the wafer processed by the single-wafer cleaning apparatus and the single-wafer polishing apparatus is provided, and the ID mark is stored and utilized to store the wafer. The processing history can be easily managed.

Further, in the cleaning process, the wafer is always conveyed in a wet state, so that the wafer can be kept in a high cleanliness state.

Further, by providing two spin cleaning units, it is possible to improve the cleaning throughput.

[Brief description of drawings]

FIG. 1 is a conceptual diagram of a wafer single-wafer polishing cleaning equipment according to the present invention.

FIG. 2 is a block diagram of a control system of a wafer single-wafer polishing cleaning equipment according to the present invention.

FIG. 3 is a flow chart of a wafer single-wafer polishing cleaning method according to the present invention.

[Explanation of symbols]

1 Wafer single-wafer polishing cleaning equipment 10 Single wafer polishing machine 11 Head assembly 12 Table assembly 13 Polishing slurry supply means 14 Upper rotating shaft 15 Top ring 16 Mounting plate 17 turntable 18 polishing pad 20 single wafer cleaning equipment 21 Edge handling robot 22 First Delivery Unit 22a shelf 22b fountain nozzle 23 Brush cleaning unit 24 Second Delivery Unit 24a shelf 24b fountain nozzle 25 Transport robot 26 Spin Cleaning Unit 26a rotating shaft 26b spin table 26c fountain nozzle 26d gas nozzle 27 Traveling and transporting robot 27a One hand 27b Runway 27c The other hand 28 Third Delivery Unit 28a shelf 30 ID reading means 31 ID sensor 32 4th delivery unit 32a shelf 33 Transport robot 40 computers m ID number W wafer w wax

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Claims (3)

[Claims] 1. A single-wafer cleaning apparatus continuously arranged in a single-wafer polishing apparatus and an ID mark provided on a wafer processed by the single-wafer cleaning apparatus, and a reading sensor reads the single wafer. A single-wafer polishing cleaning equipment having an ID reading means provided on the wafer unloading side of the cleaning apparatus. 2. The single-wafer polishing / cleaning equipment according to claim 1, wherein the single-wafer cleaning apparatus is provided with a brush cleaning unit and two spin cleaning units. 3. A wafer in a dry state is supplied to a single-wafer polishing apparatus, polished, washed with cleaning water, conveyed in a wet state for brush cleaning, and further conveyed in a wet state. A single-wafer polishing / cleaning method for a wafer, characterized by performing spin cleaning, drying, and then reading an ID mark.