JP2003077759A - Method of manufacturing metallized film for capacitor, apparatus therefor, and capacitor using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem, where, as a metallized film for a capacitor which comprises a film and zinc or mixture of zinc and aluminum vacuum- deposited on the film has low humidity-resistant performance, the zinc or the mixture of zinc and aluminum is easily changed into oxide or hydroxide by the influence of oxygen and humidity in the atmosphere, and the resistance of the metallized film is increased and the metallized film cannot function as a capacitor electrode. SOLUTION: In a deposition process in which zinc or mixture of zinc and aluminum is vacuum-deposited at least on one side of a film paid off from a raw material roll and taken up into a product roll, the film is taken up into the product roll after the deposition side of the film is exposed to oxygen gas.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a metallized film used for a capacitor and a capacitor using the same.

[0002]

2. Description of the Related Art Capacitors made of metal-deposited plastic films (hereinafter metallized film capacitors)
Has been widely used from the past.

FIG. 8 is a sectional view of a conventional metallized film capacitor. Two vapor deposition films 77 each having a metal 68 vapor-deposited on one side with a thickness of 300 to 600 Å are stacked and wound or laminated, and the metal is sprayed from both end faces (hereinafter referred to as metallikon 6).
4) and then a capacitor is formed.

FIG. 9 is a sectional view of another conventional metallized film capacitor, in which a capacitance forming portion 68b of vapor-deposited metal is shown.
By thinning the vapor deposition thickness of 100 to 300Å and making it thinner than the portion 68a in contact with the metallikon,
Self-healing property (Even when the film locally breaks down, the surrounding evaporated metal evaporates and scatters electrically,
The function as a capacitor is restored).

As the vapor-deposited metal 68, 68a, 68b,
Aluminum, zinc, or a mixture thereof has been widely used. However, when aluminum is used, the adhesive strength with the metallikon 64 is weak, and when an AC voltage is applied for a long time, the capacity is deteriorated due to the oxidative deterioration of aluminum. In recent years, zinc or a mixture of zinc and aluminum is often used because of the problem of reduction.

On the other hand, when zinc or a mixture of zinc and aluminum is used as the vapor-deposited metal 68 or 68a, 68b, the contact strength with the metallikon 64 is strong and the capacity is less reduced even if an AC voltage is applied for a long period of time. Since the humidity resistance is low, it easily changes to an oxide or hydroxide due to the influence of oxygen and humidity in the atmosphere to increase the resistance value, which makes it impossible to function as a capacitor electrode. This increase in resistance value can be caused by the influence of oxygen and moisture in the air during the process of manufacturing a capacitor and also in the state of being used as a capacitor, and zinc or a mixture of zinc and aluminum is deposited on a metal. It was a drawback when used as. In particular, the above-mentioned oxidation and hydroxylation reactions progress faster as the vapor-deposited metal becomes thinner. Therefore, as shown in FIG.
When the thickness of the vapor-deposited metal of 8b was reduced, the increase in the resistance value of the capacitance forming portion 68b was a major drawback.

Several proposals have been made in the past to solve this drawback. For example, Japanese Patent Publication Sho 62-13
Japanese Patent No. 0503 proposes that a moisture vapor resistance is improved by forming a protective film of silicon oil, fatty acid, wax or the like having a vapor pressure defined on a zinc vapor deposition film.

Further, Japanese Patent Laid-Open No. 1-158714 discloses that
A manufacturing method is disclosed in which a protective film made of silicon oxide is formed on a zinc deposited film to improve moisture resistance. Further, Japanese Patent Application Laid-Open No. 9-102435 discloses a manufacturing method in which zinc is vapor-deposited and then the vapor deposition film is pressurized in a vapor deposition machine using a pressure roll. Further, Japanese Patent Application Laid-Open No. 11-144994 discloses a manufacturing method for improving moisture resistance by forming a thin film containing an antioxidant on a zinc vapor deposition film. Further, Japanese Patent Laid-Open No. 2001-11626 discloses a method of improving moisture resistance by contacting ozone gas in a state where a metallized film is rolled up.

[0009]

However, none of the above-mentioned conventionally proposed methods is sufficient to improve the moisture resistance of a vapor deposited film made of zinc or a mixture of zinc and aluminum. It was

That is, a method of forming a protective film of silicon oil, fatty acid, wax or the like having a vapor pressure defined on a zinc vapor deposition film, which is described in Japanese Patent Publication No. 62-130503,
As disclosed in Japanese Patent Application Laid-Open No. 11-144994 of the same applicant, it was not sufficient to completely block oxygen and water.

Further, a method of forming a protective film made of silicon oxide on a zinc vapor-deposited film described in JP-A-1-158714 and a description of JP-A-11-144994.
Each of the methods for forming a thin film containing an antioxidant on a zinc vapor deposition film requires a special device for forming a protective film, resulting in an expensive capacitor.

Further, particularly in the method of forming a protective film made of silicon oxide on a zinc vapor-deposited film described in JP-A-1-158714, cracks are likely to occur in silicon oxide, and further measures for preventing cracks are required. Was needed.

Further, since the above-mentioned antioxidant and silicon oxide are insulators, when formed on the entire surface of the vapor-deposited metal, good electrical contact with the metallikon cannot be obtained. For contacting parts,
There was a problem that special masking had to be provided.

Further, the manufacturing method described in Japanese Patent Application Laid-Open No. 9-102435, in which zinc is vapor-deposited and then the vapor-deposited film is pressed using a pressure roll in a vapor-depositing machine, tends to cause scratches and cracks in the vapor-deposited film. There was a point.

Further, the method described in Japanese Patent Laid-Open No. 2001-11626, in which the metallized film is wound into a roll and brought into contact with ozone gas to improve the moisture resistance, is a method for contacting with ozone gas. Not only a closed tank is required, but the number of steps and lead time are increased because of contact with ozone gas.

Further, since the ozone gas is brought into contact with the ozone gas in a rolled-up state, it is difficult to form a uniform oxide film because the ozone gas entering from the end face has different concentrations at the end and the center in the width direction. There was a problem.

[0017]

In order to achieve the above object, a method for producing a metallized film for a capacitor according to claim 1 of the present invention comprises: a film drawn from a raw roll; Alternatively, the method includes a vapor deposition step of vacuum-depositing a mixture of zinc and aluminum to form a metal film, and a formation step of forming an oxide film on the metal surface deposited in the vapor deposition step.

According to a second aspect of the present invention, in the method for producing a metallized film for a capacitor, the metal film is vacuum-deposited with zinc or a mixture of zinc and aluminum on at least one surface of the film drawn from the original roll. And a step of exposing the metal surface vapor-deposited in the vapor deposition step to oxygen gas.

A method for producing a metallized film for a capacitor according to a third aspect of the present invention is the method for producing a metallized film for a capacitor according to the second aspect, which comprises a winding step of winding the metallized film around a product roll. And a blowing step of blowing oxygen gas to the inner surface side where the metallized film and the product roll are in contact with each other.

According to a fourth aspect of the present invention, there is provided a method for producing a metallized film for capacitors according to the third aspect of the present invention, wherein a blowout portion for blowing oxygen gas is provided. It has a follow-up movement step of moving the part according to the radius of the product roll that increases during the vapor deposition step.

According to a fifth aspect of the present invention, there is provided a method of producing a metallized film for a capacitor according to the second aspect of the present invention, wherein a vacuum vapor deposition machine for vacuum vapor deposition is provided, and the inside of the vacuum vapor deposition machine is provided. Introducing oxygen gas into the housing provided in the housing, the metallized film passes through the inside of the housing.

A capacitor according to a sixth aspect of the present invention comprises the metallized film for a capacitor according to any of the first to fifth aspects.

According to a seventh aspect of the present invention, in the capacitor according to the sixth aspect, the thickness of the vapor-deposited metal is smaller than the thickness of the vapor-deposited metal in the portion in contact with the metallikon.

According to an eighth aspect of the present invention, there is provided an apparatus for producing a metallized film for a capacitor, wherein a metal film is formed by vacuum-depositing zinc or a mixture of zinc and aluminum on at least one surface of a film drawn from a raw roll. And a forming means for forming an oxide film on the metal surface deposited in the vapor deposition step.

According to a ninth aspect of the present invention, in the apparatus for producing a metallized film for a capacitor, the metal film is vacuum-deposited with zinc or a mixture of zinc and aluminum on at least one surface of the film drawn from the original roll. And an exposing means for exposing the vapor-deposited metal surface to oxygen gas.

According to a tenth aspect of the present invention, there is provided an apparatus for producing a metallized film for a capacitor, comprising the winding means for winding the metallized film around a product roll in the apparatus for producing a metallized film for a capacitor according to the ninth aspect. , A blowing means for blowing oxygen gas on the inner surface side where the metallized film and the product roll are in contact with each other.

An apparatus for producing a metallized film for a capacitor according to claim 11 of the present invention is the method for producing a metallized film for a capacitor according to claim 10, wherein the blowing means for blowing oxygen gas and the blowing means. And a follow-up moving means for making follow-up movement according to the increasing radius of the product roll in the winding means.

According to a twelfth aspect of the present invention, there is provided an apparatus for producing a metallized film for capacitors according to the ninth aspect of the apparatus for producing a metallized film for capacitors, wherein a vacuum vapor deposition machine for vacuum vapor deposition and a vacuum vapor deposition machine are provided. It has means for introducing oxygen gas into the housing provided and means for allowing the metallized film to pass through the inside of the housing.

[0029]

According to the method for producing a metallized film for a capacitor according to claim 1 of the present invention, zinc or a mixture of zinc and aluminum is vacuumed on at least one surface of the film drawn from the original roll. An oxide film is formed on the surface of the vapor deposition film because the vapor deposition process includes a vapor deposition process of forming a metal film and a formation process of forming an oxide film on the metal surface deposited in the vapor deposition process. Since it blocks moisture and moisture, a metallized film having excellent moisture resistance can be produced by a simple mechanism.

According to the method for producing a metallized film for a capacitor according to the second aspect of the present invention, zinc or a mixture of zinc and aluminum is vacuum-deposited on at least one surface of the film drawn from the original roll. It has a vapor deposition step of forming a metal film and an exposure step of exposing oxygen gas to the metal surface vapor-deposited in the vapor deposition step. Since the oxide film blocks oxygen and moisture, it has a simple mechanism and moisture resistance. It is possible to produce an excellent metallized film.

According to the method of manufacturing a metallized film for a capacitor of claim 3, in the method of manufacturing a metallized film for a capacitor of claim 2, a winding step of winding the metallized film around a product roll, The metallized film and the product roll have a blowing step of blowing oxygen gas on the inner surface side in contact with each other, because oxygen is caught in the product roll, an oxide film is further formed inside the product roll. Progresses, and a metallized film with more excellent moisture resistance can be realized.

According to the method for producing a metallized film for a capacitor according to claim 4, in the method for producing a metallized film for a capacitor according to claim 3, a blowing part for blowing oxygen gas is provided, and the blowing part is provided. It has a follow-up movement process that moves according to the radius of the product roll that increases during the vapor deposition process. Even in the continuous vapor deposition process of long films, the radius increases from the start of deposition when the radius of the product roll is small. Since oxygen can be blown at a constant distance until the end of vapor deposition, the surface is uniformly oxidized, and a long metallized film excellent in moisture resistance can be manufactured by an inexpensive mechanism.

According to the method for producing a metallized film for a capacitor according to claim 5, in the method for producing a metallized film for a capacitor according to claim 2, a vacuum vapor deposition machine for vacuum vapor deposition is provided, and the inside of the vacuum vapor deposition machine is provided. Introducing oxygen gas into the provided housing, and having a step of allowing the metallized film to pass through the inside of the housing, exposing the vapor deposition surface to oxygen gas without deteriorating the vacuum degree of the entire vacuum vapor deposition machine. be able to.

According to the capacitor of claim 6,
Since the metallized film for a capacitor according to any one of claims 1 to 5 is provided, a capacitor having excellent moisture resistance can be realized.

According to the capacitor of claim 7,
In the capacitor according to the sixth aspect, since the thickness of the vapor-deposited metal is formed thinner than the thickness of the vapor-deposited metal in the portion in contact with the metallikon, a capacitor having further improved self-recovery can be realized.

According to the apparatus for producing a metallized film for a capacitor of claim 8, zinc or a mixture of zinc and aluminum is vacuum-deposited on at least one surface of the film drawn from the original roll to form a metal film. It has a vapor deposition means for forming, and a means for forming an oxide film on the metal surface vapor-deposited in the vapor deposition step. Since the oxide film is formed and the oxide film blocks oxygen and moisture, a metallized film having excellent moisture resistance can be manufactured by a simple mechanism.

According to the apparatus for producing a metallized film for a capacitor according to claim 9 of the present invention, zinc or a mixture of zinc and aluminum is vacuum-deposited on at least one surface of the film drawn from the original roll. Since it has a vapor deposition means for forming a metal film and an exposure means for exposing the vapor-deposited metal surface to oxygen gas, an oxide film is formed on the surface of the vapor deposition film, and the oxide film blocks oxygen and moisture. A metallized film having excellent moisture resistance can be manufactured with a simple mechanism.

Further, according to the apparatus for producing a metallized film for a capacitor according to claim 10, in the apparatus for producing a metallized film for a capacitor according to claim 9, winding means for winding the metallized film around a product roll, The metallized film has a blowing means for blowing oxygen gas on the inner surface side in contact with the product roll, and because oxygen is caught in the product roll, an oxide film is further formed on the surface of the deposited film inside the product roll. Progresses, and a metallized film with more excellent moisture resistance can be realized.

According to the apparatus for producing a metallized film for a capacitor according to claim 11, in the apparatus for producing a metallized film for a capacitor according to claim 10, blowing means for blowing oxygen gas and the blowing means are wound. The follower has a follow-up moving unit that moves in accordance with the increasing radius of the product roll in the take-out unit, and even in the continuous vapor deposition process of a long film, the radius increases from the start of vapor deposition when the radius of the product roll is small. Since oxygen can be blown at a constant distance until the end of vapor deposition, the surface is uniformly oxidized, and a long metallized film excellent in moisture resistance can be manufactured by an inexpensive mechanism.

According to the apparatus for producing a metallized film for a capacitor according to claim 12, in the apparatus for producing a metallized film for a capacitor according to claim 9, a vacuum vapor deposition machine for vacuum vapor deposition and a device provided inside the vacuum vapor deposition machine are provided. A means for introducing oxygen gas into the housing, and a means for the metallized film to pass through the inside of the housing, without degrading the vacuum degree of the entire vacuum vapor deposition apparatus, the vapor deposition surface to oxygen gas. Can be exposed.

The present embodiment will be described below with reference to the drawings.

(First Embodiment) FIG. 1 shows the first embodiment.
FIG. 3 is an explanatory view showing a method and an apparatus for manufacturing the metallized film for a capacitor of FIG.

The film 4 is unwound from the original roll 2 mounted inside the vapor deposition machine 1, and zinc is vapor-deposited on the film from the zinc evaporation source 6 in the cooling can 5 to produce the metallized film 14, and blown out. The vapor deposition metal is exposed to the oxygen gas 8 by blowing the oxygen gas 8 blown out from the portion 7 onto the vapor-deposited surface. Then product roll 3
The metallized film for a capacitor is manufactured by winding the film on a film.

As a result, a zinc oxide film is formed on the surface of the vapor-deposited film, and this oxide film blocks oxygen and moisture, so that a metallized film having excellent moisture resistance can be manufactured by a simple mechanism.

(Second Embodiment) FIG. 2 shows the second embodiment.
FIG. 3 is an enlarged view of the vicinity of a product roll relating to the method and apparatus for manufacturing the metallized film for capacitors of FIG.

The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 2, when the metallized film 14 is wound on the product roll 3, oxygen gas 8 is blown to the inner surface side where the metallized film 14 and the product roll 3 are in contact with each other. Since the gas 8 is entrained, the formation of an oxide film on the surface of the vapor deposition film further progresses inside the product roll 3, and a metallized film having more excellent moisture resistance can be realized.

(Third Embodiment) FIG. 3 shows the third embodiment.
3 is a diagram showing a method and an apparatus for manufacturing the metallized film for a capacitor of FIG. 4, and FIG. 4 is an enlarged view of the vicinity of the follow-up drive unit 31 in FIG.

The same components as those in the first and second embodiments are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 3, the film 4 is unwound from the raw roll 2, and in the cooling can 5, a mixture of zinc and aluminum is vapor-deposited on the film 4 by using the aluminum evaporation source 35 and the zinc evaporation source 6. The chemical film 15 is produced.

Next, the oxygen gas 8 is blown from the blow-out port 7 attached to the follow-up drive unit 31, and then the product roll 3 is wound. Here, the follow-up drive unit 31 drives the pinion gear 34 by following the radius of the product roll 3 that increases during the vapor deposition process, via the intermediate roller 32 around which the metallized film 15 is wound, thereby rotating the rotary shaft. 33. The intermediate roll 32 rotates around the center 33, and the metallized film 15 is wound around the intermediate roller 32 arranged on the follow-up drive unit 31 to increase the radius of the product roll 3 even during the vapor deposition process. This is for winding the metallized film 15 while keeping the distance between 32 and the product roll 3 constant.

The blow-out port 7 is arranged on the follow-up drive unit 31, and is arranged so as to blow the oxygen gas 8 on the inner surface side where the metallized film 15 and the product roll 3 are in contact with each other. As a result, even during the vapor deposition process in which the radius of the product roll 3 increases, the metallized film 15 is kept at a certain distance.
Since the oxygen gas 8 can be sprayed on the vapor deposition surface of
For example, even when vapor deposition is performed over a long length of more than 10,000 m, a uniform effect can be obtained from the beginning to the end of vapor deposition.

Further, oxygen gas 8 is placed inside the product roll 3.
As a result, the formation of an oxide film on the surface of the vapor deposition film further progresses inside the product roll 3, and a metallized film having more excellent moisture resistance can be realized.

(Embodiment 4) The same components as those in Embodiment 1 are designated by the same reference numerals and the description thereof will be omitted.

FIG. 5 shows a manufacturing method and a manufacturing apparatus according to the fourth embodiment, in which a housing 5 provided inside the vacuum vapor deposition machine 1 is used.
Oxygen gas 8 is introduced into the inside of 1 through a pipe (not shown) from the outside of the vacuum vapor deposition machine 1. The metallized film 14 allows the housing 5 to pass through the opening 42 provided in the housing 51.
The vapor deposition surface of the metallized film 14 is exposed to the oxygen gas 8 while passing through the inside of 1, and is wound around the product roll 3. By appropriately setting the clearance between the opening 42 and the metallized film 4, it is possible to limit the amount of the oxygen gas 8 introduced into the housing 51 leaking through the opening 42 to the entire vacuum evaporation apparatus 1, and thus the vacuum evaporation apparatus. The vapor deposition surface can be exposed to the oxygen gas 8 without deteriorating the overall degree of vacuum.

(Fifth Embodiment) FIG. 6 is a sectional view of a capacitor according to the fifth embodiment.
A metallized film 67 (on which the vapor-deposited metal 68 is formed on the film 4), which is exposed to the oxygen gas 8 to form the oxide film 65 in any one of the vapor deposition steps described.
It is a capacitor with excellent moisture resistance.

(Sixth Embodiment) FIG. 7 shows a sixth embodiment.
7B is a cross-sectional view of the capacitor shown in FIG. 6, and in Embodiment 6, the metallized film having the oxide film 65a formed by forming the capacitance forming portion 68b of the vapor-deposited metal 68 thinner than the thickness of the portion 68a in contact with the metallikon. Since it is 69 (film 4 on which vapor-deposited metals 68a and 68b are formed), it is possible to realize a capacitor having excellent moisture resistance and further improved self-recovery.

(Comparative Study) Next, the moisture resistance of the metallized film produced according to any one of the first to fourth embodiments will be described in comparison with the conventional technique.

In the present embodiment, the following metallized film was produced using a polypropylene film having a thickness of 6 μm, a length of 15,000 m and a width of 520 mm.

Embodiment 1: Polypropylene film 4
Then, zinc was vapor-deposited to a thickness such that the surface resistance of the vapor-deposited film was 5 Ω / cm ^2, and the vapor-deposited surface was covered with oxygen gas 8 by the method shown in FIG.
It was exposed to and wound on a product roll 3.

Embodiment 2: Polypropylene film 4
Then, zinc and aluminum were mixed and vapor-deposited in such a thickness that the surface resistance value of the vapor-deposited film was 5 Ω / cm ^2, and the vapor-deposited surface was exposed to oxygen gas 8 by the method shown in FIG.

Embodiment 3: Polypropylene film 4
Then, zinc and aluminum were mixed and vapor-deposited in a thickness such that the surface resistance of the vapor-deposited film was 10 Ω / cm ^2, and the vapor-deposited surface was exposed to oxygen 8 by the method shown in FIG.

Embodiment 4: Polypropylene film 4
Zinc was vapor-deposited in a thickness such that the surface resistance of the vapor-deposited film was 10 Ω / cm ^2, and the vapor-deposited metal on both sides was exposed to oxygen 8 by the method shown in FIG.

Next, after removing each product roll 3 from the vapor deposition machine, the metallized film cut out from the product roll 3 in a size of 520 mm × 10 mm was subjected to a humidity resistance test in an atmosphere of a temperature of 60 ° C. and a relative humidity of 85%. After standing for 180 minutes, the resistance value of the vapor-deposited metal was measured. For comparison, the same moisture resistance test was performed on the following samples as the metallized film of the prior art.

Prior art 1: Zinc was vapor-deposited on a polypropylene film 4 to a thickness such that the surface resistance of the vapor-deposited film was 5 Ω / cm ^2, and wound on a product roll 3 as it was.

Prior art 2: Zinc and aluminum were mixed and vapor-deposited on a polypropylene film 4 in a thickness such that the surface resistance value of the vapor-deposited film was 5 Ω / cm ^2, and the product was wound on a product roll 3 as it was.

Prior art 3: Zinc and aluminum were mixed and vapor-deposited on a polypropylene film 4 in such a thickness that the surface resistance of the vapor-deposited film was 10 Ω / cm ^2, and wound on a product roll 3 as it was.

The resistance value of the vapor-deposited metal before and after the humidity resistance test and the rate of increase in the resistance value after the humidity resistance test of each sample are shown in (Table 1). The rate of increase in resistance was calculated by the following formula.

Resistance value increase rate = (resistance value immediately after vapor deposition−resistance value after humidity resistance test) / resistance value immediately after vapor deposition (%)

[0070]

[Table 1]

In the present embodiment, it can be seen that a metallized film having a smaller rate of increase in resistance value and excellent moisture resistance can be manufactured as compared with the prior art. In particular, the third and fourth embodiments
According to the comparison between the conventional technique 3 and the conventional technique 3, even when the vapor deposition film is formed thin (the surface resistance value is high), a metallized film having a small resistance value increase rate and good moisture resistance can be manufactured.

Next, as an example of the characteristics of the capacitor according to the present embodiment, the following capacitor was prepared and the temperature was 40 ° C.
After conducting a humidity resistance test in which 1.25 times the rated voltage is applied for 1000 hours at 95% relative humidity, the CR of the capacitor is tested.
The value (product of capacitor capacitance and insulation resistance) and tan δ at 1 kHz were measured.

Embodiment 5: Polypropylene film 4
Then, zinc was vapor-deposited in a thickness such that the surface resistance of the vapor-deposited film was 5 Ω / cm ^2, and ^two metallized films produced by exposing to oxygen gas by the method shown in FIG. Capacitor shown in 6.

Embodiment 6: Polypropylene film 4
The surface resistance of the deposited film is 10Ω / c in the capacitance forming part.
m ^2, 4ohm in the contact portion between metallikon 64 /
Zinc and aluminum are mixed and vapor-deposited with a thickness of cm ² .
The capacitor shown in FIG. 7, in which two metallized films produced by exposing the vapor deposition surface to oxygen 8 by the method shown in FIG. 3 are stacked and wound.

Prior Art 4: The capacitor having the structure of FIG. 8 in which the two metallized films wound on the product roll as they are without being exposed to oxygen gas in the fifth embodiment are stacked and wound.

Prior art 5: A capacitor having the structure of FIG. 9 in which the two metallized films wound in the product roll as they are without being exposed to oxygen gas in the sixth embodiment are stacked and wound.

In all the capacitors, the polypropylene film used had a thickness of 6 μm, and the capacitor had a capacitance of 30 μF. All capacitors used were molded with epoxy resin.

The obtained results are shown in (Table 2).

[0079]

[Table 2]

In the capacitor of the prior art, the resistance value of the vapor deposition electrode rises due to the influence of humidity to increase the series equivalent resistance and tan δ increases, whereas the capacitor of the present embodiment has tan δ. It did not increase and showed good characteristics.

In particular, as shown in FIGS. 7 and 9, the vapor deposition electrodes 68b and 78b of the capacitance forming portion are connected to the metallikons 64 and 74.
In the case of the above-mentioned capacitor which is formed thinner than the contact portions 68a and 78a with improved self-recovery property, in the prior art 6, since the thickness of the capacitance forming portion 78b is thin, the resistance value increase of the vapor deposition film is large. While tan δ was greatly deteriorated, in the sixth embodiment, good tan δ was not deteriorated, and moreover, the self-recoverability was good, so that good capacitor characteristics without CR value reduction were obtained.

Although a polypropylene film having a thickness of 6 μm is used in the embodiment, similar effects can be obtained with other thicknesses. The same effect can be obtained when a polyethylene terephthalate film, a polyphenylene sulfide film, a polyethylene naphthalate film or the like is used as the film.

Further, the method of exposing the vapor-deposited metal to the oxygen gas 8 is shown in FIGS. 1 to 5 as the present embodiment, but the method is not limited to these, and the film 4 drawn from the original roll 2 is not limited to these. In a vapor deposition process in which metal is vacuum-deposited on at least one surface and wound around the product roll 3, the same effect can be obtained if the manufacturing method is that the vapor-deposited surface is exposed to oxygen gas 8 and then wound around the product roll 3. be able to.

When exposing the metallized films 14, 15 to the oxygen gas 8, nitrogen gas, argon gas, etc.
The same effect can be obtained by mixing an inert gas that does not corrode the deposited metal.

[0085]

As is apparent from the above description, according to the method for producing a metallized film for a capacitor according to claim 1 of the present invention, zinc or at least one surface of the film drawn from the original roll is used. An oxide film is formed on the surface of the deposited film because it has a deposition process of forming a metal film by vacuum depositing a mixture of zinc and aluminum and a formation process of forming an oxide film on the metal surface deposited in the deposition process. The oxide film blocks oxygen and moisture,
A metallized film having excellent moisture resistance can be produced by a simple mechanism.

According to the method for producing a metallized film for a capacitor according to claim 2 of the present invention, zinc or a mixture of zinc and aluminum is vacuum-deposited on at least one surface of the film drawn from the original roll. It has a vapor deposition step of forming a metal film and an exposure step of exposing oxygen gas to the metal surface vapor-deposited in the vapor deposition step. Since the oxide film blocks oxygen and moisture, it has a simple mechanism and moisture resistance. It is possible to produce an excellent metallized film.

According to the method for producing a metallized film for a capacitor according to claim 3, in the method for producing a metallized film for a capacitor according to claim 2, a winding step of winding the metallized film around a product roll, The metallized film and the product roll have a blowing step of blowing oxygen gas on the inner surface side in contact with each other, because oxygen is caught in the product roll, an oxide film is further formed inside the product roll. Progresses, and a metallized film with more excellent moisture resistance can be realized.

According to the method for producing a metallized film for a capacitor according to claim 4, in the method for producing a metallized film for a capacitor according to claim 3, a blowing part for blowing oxygen gas is provided, and the blowing part is provided. It has a follow-up movement process that moves according to the radius of the product roll that increases during the vapor deposition process. Even in the continuous vapor deposition process of long films, the radius increases from the start of deposition when the radius of the product roll is small. Since oxygen can be blown at a constant distance until the end of vapor deposition, the surface is uniformly oxidized, and a long metallized film with excellent moisture resistance can be produced by an inexpensive mechanism. .

According to the method for producing a metallized film for a capacitor according to claim 5, in the method for producing a metallized film for a capacitor according to claim 2, a vacuum vapor deposition machine for vacuum vapor deposition is provided, and the inside of the vacuum vapor deposition machine is provided. Since the metallized film has a step of passing oxygen gas into the housing provided so that the metallized film passes through the inside of the housing, it is possible to expose the vapor deposition surface to oxygen gas without deteriorating the vacuum degree of the entire vacuum vapor deposition machine. You can

According to the capacitor of the sixth aspect,
Since the metallized film for a capacitor according to any one of claims 1 to 5 is provided, a capacitor having excellent moisture resistance can be realized.

According to the capacitor of claim 7,
In the capacitor according to the sixth aspect, since the thickness of the vapor-deposited metal is formed thinner than the thickness of the vapor-deposited metal in the portion in contact with the metallikon, a capacitor having further improved self-recovery can be realized.

According to the apparatus for producing a metallized film for a capacitor of claim 8, zinc or a mixture of zinc and aluminum is vacuum-deposited on at least one surface of the film drawn from the original roll to form a metal film. It has a vapor deposition means for forming, and a means for forming an oxide film on the metal surface vapor-deposited in the vapor deposition step. Since an oxide film is formed and the oxide film blocks oxygen and moisture, a metallized film having excellent moisture resistance can be manufactured by a simple mechanism.

According to the apparatus for producing a metallized film for a capacitor according to claim 9 of the present invention, zinc or a mixture of zinc and aluminum is vacuum-deposited on at least one surface of the film drawn from the original roll. Since it has a vapor deposition means for forming a metal film and an exposure means for exposing the vapor-deposited metal surface to oxygen gas, an oxide film is formed on the surface of the vapor deposition film, and the oxide film blocks oxygen and moisture. A metallized film having excellent moisture resistance can be manufactured with a simple mechanism.

According to the apparatus for producing a metallized film for a capacitor according to claim 10, in the apparatus for producing a metallized film for a capacitor according to claim 9, winding means for winding the metallized film around a product roll, The metallized film has a blowing means for blowing oxygen gas on the inner surface side in contact with the product roll, and because oxygen is caught in the product roll, an oxide film is further formed on the surface of the deposited film inside the product roll. Progresses, and a metallized film with more excellent moisture resistance can be realized.

According to the apparatus for producing a metallized film for a capacitor according to claim 11, in the apparatus for producing a metallized film for a capacitor according to claim 10, a blowing means for blowing oxygen gas and the blowing means are wound. The follower has a follow-up moving unit that moves in accordance with the increasing radius of the product roll in the take-out unit, and even in the continuous vapor deposition process of a long film, the radius increases from the start of vapor deposition when the radius of the product roll is small. Since oxygen can be blown at a constant distance until the end of vapor deposition, the surface is uniformly oxidized, and a long metallized film excellent in moisture resistance can be manufactured by an inexpensive mechanism.

According to the apparatus for producing a metallized film for a capacitor according to claim 12, in the apparatus for producing a metallized film for a capacitor according to claim 9, a vacuum vapor deposition machine for vacuum vapor deposition and a device provided in the vacuum vapor deposition machine are provided. A means for introducing oxygen gas into the housing and means for allowing the metallized film to pass through the inside of the housing. By exposing the vapor-deposited surface to the oxygen gas, the vacuum of the entire vacuum vapor deposition apparatus is obtained. The vapor deposition surface can be exposed to oxygen gas without deteriorating the temperature.

[Brief description of drawings]

FIG. 1 is a diagram of a method and an apparatus for manufacturing a metallized film according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a method and an apparatus for producing a metallized film according to the second embodiment.

FIG. 3 is a diagram showing a method and an apparatus for producing a metallized film according to the third embodiment.

FIG. 4 is an enlarged view of a method and apparatus for manufacturing a metallized film according to the third embodiment.

FIG. 5 is a diagram showing a method and an apparatus for producing a metallized film according to the fourth embodiment.

FIG. 6 is a sectional view of a capacitor according to the fifth embodiment.

FIG. 7 is a sectional view of a capacitor according to the sixth embodiment.

FIG. 8 is a cross-sectional view of a conventional capacitor

FIG. 9 is a sectional view of another conventional capacitor.

[Explanation of symbols]

1 vacuum deposition machine 2 original roll 3 product rolls 4 films 5 cooling can 6 Zinc evaporation source 7 outlet 8 oxygen gas 14,15 Metallized film 31 Follow-up moving part 32 Intermediate roller 33 rotation axis 34 pinion gear 35 Aluminum evaporation source 51 housing 52 opening 64 Metallicon 67 Metallized film 68 Evaporated metal 68a Metallicon contact part 68b Capacitance forming part

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shigeo Okabe             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Toshihiro Sasaki             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 4K029 AA11 AA25 BA18 BA21 BD00                       CA01 DB14 GA00                 5E082 AB04 EE26 EE37 FG06 LL05

Claims (12)

[Claims] 1. A vapor deposition step of vacuum-depositing zinc or a mixture of zinc and aluminum to form a metal film on at least one surface of a film drawn from a roll, and a metal surface vapor-deposited in the vapor deposition step. A method of manufacturing a metallized film for a capacitor, comprising the step of forming an oxide film. 2. A vapor deposition step of vacuum-depositing zinc or a mixture of zinc and aluminum to form a metal film on at least one surface of a film drawn out from an original roll, and a metal surface vapor-deposited in the vapor deposition step. A method for producing a metallized film for a capacitor, which comprises an exposure step of exposing to oxygen gas. 3. The capacitor metal according to claim 2, further comprising a winding step of winding the metallized film around a product roll, and a spraying step of spraying oxygen gas on an inner surface side where the metallized film and the product roll are in contact with each other. Of producing a photographic film. 4. The metallization for a capacitor according to claim 3, further comprising a blow-out portion for blowing oxygen gas, and a follow-up movement step of moving the blow-out portion according to the radius of the product roll increasing during the vapor deposition step. Film manufacturing method. 5. The method according to claim 2, further comprising a step of providing a vacuum vapor deposition machine for vacuum vapor deposition, introducing oxygen gas into a housing provided in the vacuum vapor deposition machine, and allowing the metallized film to pass through the inside of the housing. Manufacturing method of metallized film for capacitors. 6. A capacitor provided with the metallized film for a capacitor according to claim 1. 7. The capacitor according to claim 6, wherein the thickness of the vapor-deposited metal is smaller than the thickness of the vapor-deposited metal in the portion in contact with the metallikon. 8. A vapor deposition means for vacuum-depositing zinc or a mixture of zinc and aluminum to form a metal film on at least one surface of a film drawn from a raw roll, and a metal surface deposited in the vapor deposition step. An apparatus for producing a metallized film for a capacitor, which comprises a forming means for forming an oxide film. 9. A vapor deposition means for vacuum-depositing zinc or a mixture of zinc and aluminum to form a metal film on at least one surface of a film drawn from a raw roll, and oxygen gas on the vapor-deposited metal surface. An apparatus for producing a metallized film for a capacitor having an exposing means for exposing. 10. The metal for capacitors according to claim 9, further comprising: winding means for winding the metallized film around a product roll, and spraying means for spraying oxygen gas on an inner surface side where the metallized film and the product roll are in contact with each other. Film manufacturing equipment. 11. The metallization for capacitors according to claim 10, further comprising: blowing means for blowing oxygen gas; and follow-up moving means for moving the blowing means to follow the radius of the product roll increasing in the winding means. Film manufacturing equipment. 12. A vacuum vapor deposition machine for vacuum vapor deposition, means for introducing oxygen gas into a housing provided in the vacuum vapor deposition machine, and means for allowing a metallized film to pass through the inside of the housing. An apparatus for producing a metallized film for a capacitor as described above.