JP2003077415A - Ion implantation equipment and manufacturing method of semiconductor device using same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion implantation equipment which operates stably for a long period of time by preventing lowering of creepage resistance due to conductive deposit accreted on the inner face of an insulation bushing. SOLUTION: A continuous groove without break is cut outward (atmosphere side) along the circumference on the inside face of an insulation bushing 11 in a way to divide an ion beam generation chamber flange 6 and an ion source support section flange 5. Since no reaction product is deposited in the groove section 7 due to this arrangement, a short-circuiting caused by surface creepage between the ion beam generation chamber flange 6 and the ion source support section flange 5 is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus for mass-analyzing ions generated from an ion source, selecting a predetermined ion, accelerating the selected ion, and implanting the ion into an object to be processed. The present invention relates to a method of manufacturing a semiconductor device manufactured using the ion implantation device.

[0002]

2. Description of the Related Art In a conventional ion implantation apparatus, a conductive product adheres to the inner surface of an insulating bushing that is grounded between a high potential portion of an ion source generation chamber and a ground potential portion, thereby increasing the high potential. Insulation resistance between the high voltage part and the ground potential part is reduced, and finally an electric discharge occurs on the inner peripheral surface between the high potential part and the ground potential part, the ion implantation device is stopped, and the insulating bushing is cleaned and The removal of conductive products or the bushings had to be replaced by waste. In addition, it takes time to remove the conductive products adhering to the inner surface of the insulating bushing during the periodic maintenance of the ion implanter.
The operation rate of the apparatus was adversely affected by the stoppage of the ion implantation apparatus.

Therefore, an ion implanter as described in Japanese Patent Laid-Open No. 10-106478 has been developed. The ion implanter described in Japanese Patent Laid-Open No. 10-106478 will be described below with reference to FIG.

Ion source generating chamber 102 of the ion implanter described in Japanese Patent Laid-Open No. 10-106478.
Are support members 116, 116 that support the ion source 112.
The insulating bushing 120 provided between the a and the ion beam generating container 124 via the first flange 118 and the second flange 122 is the first insulating bushing 1 for fixing.
20a and two second insulating bushings 120b for replacement
It consists of two insulating bushings. Also, the second
A protrusion 120b 'is formed on the inner wall surface of the bushing 120b, and a predetermined groove is provided on the side of the protrusion 120b' different from the extraction direction of the ion beam.

In such a conventional ion implanter, since the second insulating bushing 120b is further provided inside the first insulating bushing 120a, when the conductive product adheres to the inner surface of the insulating bushing 120, The replacement work is simplified by replacing only the easily replaceable second insulating bushing 120b.

[0006]

However, in the above-mentioned conventional ion implantation apparatus, in order to perform the replacement work, the operation of the ion implantation apparatus is temporarily stopped and the inside of the ion implantation apparatus is changed from the vacuum state to the atmospheric pressure. It is necessary to return to the above state and replace the second insulating bushing 120b. Furthermore, after the replacement of the second insulating bushing 120b is completed,
It is necessary to return the inside of the ion implantation apparatus from the atmospheric pressure state to the vacuum state again. Therefore, when the inside of the ion implanter is returned to the atmospheric pressure state, moisture or the like adheres to the inside of the ion implanter. As a result, there arises a problem that the time required for the vacuuming work for returning the inside of the ion implantation apparatus to the original vacuum state becomes considerably long. Further, even if the replacement work of the insulating bushing is simplified, once the operation of the ion implantation apparatus is stopped, the productivity is greatly reduced.

The present invention has been made in view of the above problems, and an object of the present invention is to provide an ion implanter and an ion implanter using the ion implanter which can extend the replacement period of the insulating bushing significantly and enable long-term stable treatment. An object of the present invention is to provide a method of manufacturing the manufactured semiconductor device.

[0008]

The ion implantation apparatus of the present invention mass-analyzes ions generated from an ion source in an ion generation container in a vacuum state, and determines predetermined ions based on the result of the mass analysis. An ion implanter for accelerating and implanting the predetermined ions into an object to be processed by selecting, wherein an ion generating container is provided so as to have an inner peripheral surface inside the ion generating container. A high potential part for generating ions and a ground potential part, and a high potential part and the ground potential part are provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generation container. And an insulating portion for insulating between the high potential portion and the ground potential portion so as to separate the high potential portion and the ground potential portion from the inner peripheral surface of the insulating portion toward the outer side of the ion generating container over the entire circumference of the inner peripheral surface of the insulating portion. There is a groove towards That.

According to the above structure, since the groove suppresses the creeping discharge due to the conductive substance adhering to the inner peripheral surface of the insulating portion, the replacement period of the insulating portion can be significantly extended and a long-term stable treatment can be performed.

In the ion implantation apparatus of the present invention, the groove has an aspect ratio of 5 or more and the width of the groove is 1 mm or less. With such a configuration, the creeping discharge can be suppressed more effectively.

In the ion implantation apparatus of the present invention, the width of the open end of the groove is larger than the width of the closed end of the groove. According to such a configuration, since it becomes more difficult for the adhered matter to adhere to the opening end portion, the creeping discharge is further effectively suppressed.

In the ion implanter of the present invention, the second groove further extends from the side surface of the groove. Since it is difficult for deposits to adhere to the second grooves, creeping discharge is further effectively suppressed.

In the ion implantation apparatus of the present invention, the inner peripheral surface of the insulating portion has an uneven shape in which a convex portion and a concave portion provided so as to partition the high potential portion and the ground potential portion are repeated, and the groove has a convex portion. It is provided in at least one of the uppermost position and the lowermost position of the recess.

With this structure, it is easy to form the groove, which is a feature of the present invention, from the inner peripheral surface of the insulating portion toward the outside of the ion generating container.

In the ion implanter of the present invention, the insulating part is composed of a plurality of parts for partitioning the high potential part and the ground potential part,
A third groove is provided on a surface where the plurality of portions contact each other so as to partition a surface that contacts the inner peripheral surface of the insulating portion along the circumferential direction, and the third groove includes the third groove. An airtight holding member for holding the airtightness between the inside and the outside of the insulating portion is provided along the entire circumference of the groove.

With this structure, a groove extending from the inner peripheral surface of the insulating portion, which is a feature of the present invention, toward the outer side of the ion generating container can be provided on the surface where a plurality of portions contact each other. It becomes possible to easily form a groove having a complicated shape.

In the ion implantation apparatus of the present invention, the groove is provided in at least one of the vicinity of the high potential portion and the vicinity of the ground potential portion.

With such a structure, even if a creeping discharge is generated on the inner peripheral surface of the insulating portion, the creeping discharge does not grow by receiving energy from the electric field. Therefore, the creeping discharge does not grow near the high potential portion and the ground potential portion. The effect of suppressing the discharge can be expected in at least one of the grooves in the vicinity.

The ion implantation apparatus of the present invention mass-analyzes the ions generated from the ion source in the ion generation container in a vacuum state, and selects a predetermined ion based on the result of the mass analysis. An ion implanter for accelerating predetermined ions to implant them into an object to be processed, wherein an ion generating container is provided so as to have an inner peripheral surface inside the ion generating container and is for generating ions from an ion source. The high potential part and the ground potential part are provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container and for insulating the high potential part and the ground potential part. An inner peripheral surface of at least one of the high-potential portion and the insulating portion, at least one of the high-potential portion and the insulating portion in a portion where the high-potential portion and the insulating portion are in contact with each other. All around Over and provided toward cutouts outward from the inner peripheral surface at least one of one of the high potential portion and the insulating portion.

With such a structure, it is possible to prevent high electric field concentration at the portion where the high-potential portion and the insulating portion are in contact with each other due to the notch, so that the replacement period of the insulating portion is greatly extended and long-term stable treatment is performed. Is possible.

The ion implanter of the present invention mass-analyzes the ions generated by the ion source in the ion generation container in a vacuum state, and selects a predetermined ion based on the result of the mass analysis. An ion implanter for accelerating predetermined ions to implant them into an object to be processed, wherein an ion generating container is provided so as to have an inner peripheral surface inside the ion generating container and is for generating ions from an ion source. The high potential part and the ground potential part are provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container and for insulating the high potential part and the ground potential part. An insulating portion, and at least one of the ground potential portion and the insulating portion at a portion where the ground potential portion and the insulating portion contact each other, and the inner peripheral surface of at least one of the ground potential portion and the insulating portion. Over the entire circumference, it is provided notches toward the outer direction from the inner peripheral surface at least one of the of the ground potential portion and the insulating portion.

With such a structure, it is possible to prevent high electric field concentration at the portion where the ground potential portion and the insulating portion are in contact with each other due to the notch, so that the replacement period of the insulating portion is greatly extended and long-term stable treatment is performed. Is possible.

In the ion implanter of the present invention, the angle of the corner portion of the bottom surface of the groove formed by the notch is 90 degrees or more.
Therefore, high electric field concentration near the bottom surface of the notch can be more effectively prevented.

The ion implantation apparatus of the present invention mass-analyzes the ions generated from the ion source in the ion generation container in a vacuum state, and selects a predetermined ion based on the result of the mass analysis. An ion implanter for accelerating predetermined ions to implant them into an object to be processed, wherein an ion generating container is provided so as to have an inner peripheral surface inside the ion generating container and is for generating ions from an ion source. The high potential part and the ground potential part are provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container and for insulating the high potential part and the ground potential part. An insulating ring is provided so as to partition the high potential part and the ground potential part so as to partition the high potential part and the ground potential part along the entire inner peripheral surface of the insulating part along the inner peripheral surface of the insulating part. .

According to the above construction, since the creeping discharge is suppressed by the insulating ring, the replacement period of the insulating portion is greatly extended and the stable treatment for a long period of time becomes possible.

In the ion implantation apparatus of the present invention, a plurality of rings are provided, and the plurality of rings are installed at intervals. Therefore, the creeping discharge generated on the inner peripheral surface of the insulating portion can be reliably suppressed.

The ion implanter of the present invention has a structure in which the ring is removable. Therefore, the ring can be easily cleaned.

In the ion implanter of the present invention, the inner peripheral surface of the insulating portion is formed in a tubular shape as a whole. With such a configuration, the manufacturing of the insulating portion becomes easy.

A method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device in which ion implantation is performed using the above-mentioned ion implantation device.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION The ion implantation apparatus of this embodiment will be described below with reference to the drawings.

(Embodiment 1) First, an ion implantation apparatus according to Embodiment 1 will be described with reference to FIGS. 1 and 2. An ion implanter having an ion source to which a high DC voltage is applied will be described as an example of the ion implanter of the present invention. Figure 1
As shown in FIG. 2, the ion implantation apparatus of the present embodiment mass-analyzes the entire structure and the ions generated in the ion source 4, selects a predetermined ion, accelerates the selected ion, and performs processing. The provision of the ion source generation chamber 10 for implanting into the body (for example, a semiconductor device in the manufacturing process) is the same as that of the ion implanter described in JP-A-10-106478.

Further, the ion source generation chamber 10 of the ion implantation apparatus of this embodiment is filled with an ion beam generation chamber 1 as a ground potential portion whose potential is fixed, a high voltage power source 2 for supplying a DC power source, and a gas. Ion source 4 for generating ions, ion source support 3 for supporting ion source 4, ion source support flange 5 provided on ion source support 3, and ion provided in ion beam generation chamber 1. A beam generating chamber flange 6 and an insulating bushing 11 positioned so as to be connected to each of the ion source support portion flange 5 and the ion beam generating chamber flange 6 are provided. This insulating bushing 11
Is for insulating the ion source supporting portion 3 as a high potential portion and the ion beam generating chamber 1 as a ground potential portion. The ion source generation chamber 10 of the ion implantation apparatus according to the present embodiment is configured by the insulating bushing 11 and the ion beam generation chamber 1 into a substantially cylindrical shape. A cross-sectional view taken along the central axis of the substantially cylindrical ion source generation chamber 10 is shown in FIG.

A feature of the ion implanter of this embodiment is that the insulating bushing 11 is provided with a groove 7 from the inner peripheral surface of the insulating bushing 11 toward the outside. The groove 7 is provided along the entire circumference of the inner peripheral surface of the insulating bushing 11 that surrounds the cylindrical shape of the ion source 4 so as to have irregularities on the surface thereof. It is provided in a ring shape so as to partition from the ion beam generating chamber 1.

Further, the ion source 4 is a part for converting a gas containing ions into plasma in order to obtain predetermined ions,
Generally, an arc chamber (not shown) is provided with opposing electrodes inside. Then, a high DC voltage supplied from the high voltage power source 2 is applied between the electrodes facing each other in the arc chamber, and the gas is turned into plasma inside the ion source 4. Therefore, the ion source 4, the ion source support portion 3, and the ion source support portion flange 5 are high potential portions to which a high DC voltage is applied. Therefore, the ion source 4, the ion source supporting portion 3, and the ion source supporting portion flange 5 as the high potential portion, and the ion beam generating chamber 1 as the ground potential portion.
An insulating bushing 11 is necessary for insulation between the ion beam generating chamber flange 6 and the ion beam generating chamber flange 6.

As described in the prior art, when the ion implanter is used, various reaction products generated when the ion beam is generated gradually adhere to the inner surface (vacuum side surface) of the insulating bushing 11. Many of these reaction products have electrical conductivity, and due to such deposits, the creeping resistance of the inner surface of the insulating bushing 11 is reduced, and the reaction product between the flanges of the ion source support portion flange 5 and the ion beam generation chamber flange 6 is reduced. Due to such a high DC voltage, a current flows along the surface, and finally a surface discharge occurs, leading to dielectric breakdown.
When the dielectric breakdown occurs, the ion implanter is damaged, and in particular, in the discharge portion of the inner surface of the insulating bushing 11, collapse (erosion) occurs along the discharge path. In the insulating bushing 11 in which the erosion is generated, the insulating portion in which the erosion is generated is deteriorated by heat of discharge or the like to form a conductive path, and a predetermined withstand voltage is often not obtained. Need to be replaced.

As shown in FIG. 1, the insulating bushing 11 also serves to support the ion source 4, and its replacement work requires a large amount of work to return the ion implanter to atmospheric pressure and remove heavy objects. It takes a lot of time. For this reason,
The insulating bushing 11 requires periodic cleaning of its inner surface to remove the attached reaction products,
The work is a major cause of lowering the operating rate of the ion implanter.

In the ion source generating chamber 10 of the ion implanter of the present embodiment, a continuous continuous groove 7 is provided on the inner surface of the insulating bushing 11 toward the outside (atmospheric pressure side) along the circumferential direction. ing. Then, the reaction products do not adhere to the inside of the groove 7. Therefore, the conductive adhered matter that adheres to the inner surface of the insulating bushing 11 is not continuously formed, and a break is formed. As a result, the ion source supporting portion flange 5 and the ion beam generating chamber flange 6 will not be short-circuited by a conductive deposit (reaction product). Thereby, it becomes possible to prevent the creeping discharge of the insulating bushing 11.

The groove 7 needs to have a shape in which various reaction products generated when the ion beam is generated do not easily enter or adhere to the inside of the groove 7, that is, a shape having a large aspect ratio (groove depth / groove width). . Even if the aspect ratio is large, if the width of the groove is wide, the reaction product enters or adheres to the inside of the groove 7. Therefore, it is necessary to set the width of the groove to a certain value or less. Therefore, in the groove 7 of the insulating bushing 11 provided in the ion source generation chamber 10 of the ion implantation apparatus of the present embodiment, the aspect ratio is 5 and the width of the groove is 1 mm. As a result, the replacement cycle of the insulating bushing 11 can be extended ten times as compared with the conventional one without causing the occurrence of creeping discharge of the insulating bushing 11.

In the ion source generating chamber 10 of the ion implanter of this embodiment, as shown in FIG.
However, the example in which three are provided at equal intervals between the ion source supporting portion flange 5 and the ion beam generating chamber flange 6 is shown, but the number of the grooves 7 is a predetermined number (single or plural) other than three. The same effect as in the present embodiment can be expected even if the intervals between the grooves 7 are irregular intervals other than equal intervals. In particular, when a plurality of grooves 7 are provided, two of them are the ion source supporting portion flange 5 and the ion beam generating chamber flange 6.
Even if a creeping discharge should occur, it can be expected to have an effect (barrier effect) of stopping at the groove 7 near the flange where the discharge does not grow by receiving energy from the electric field. Further, it may be located at either one of the vicinity of the ion source supporting portion flange 5 and the ion beam generating chamber flange 6.

Although FIG. 1 shows an example in which the groove 7 is provided in the bottom of the recess on the inner surface of the insulating bushing 11, it may be provided in a portion other than the recess (for example, the top of the protrusion). Thus, by forming the groove 7 having a large aspect ratio as shown in FIG. 1 in the insulating bushing 11 outwardly along the entire circumference of the inner surface of the insulating bushing 11, the conductivity generated by the ion source 4 is generated. Even if the reactive reaction product adheres to the inner surface of the groove 7, it is possible to prevent a decrease in the creeping resistance of the insulating bushing 11 or a dielectric breakdown due to a creeping discharge. Further, it is possible to reduce the work of removing the reaction products due to the periodic maintenance of the ion implantation device, and it is possible to operate the ion implantation device in a stable manner.

(Second Embodiment) Next, an ion implantation apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 2 and 3. The ion implantation apparatus of this embodiment is the same as that of the first embodiment.
Although the structure is almost the same as that of the ion implanting device, the shape of the groove 7 of the insulating bushing 11 of the ion source generating chamber 10 is different.

The ion implantation apparatus of this embodiment will be described below. Generally, the narrower the width of the groove 7 provided in the insulating bushing 11 is, the smaller the amount of the reaction product 15 deposited in the groove 7 is, which is advantageous from the viewpoint of preventing the creeping discharge. When the width of the groove 7 is narrow quickly, the reaction product accumulates on the inner peripheral surface of the insulating bushing 11 from the state shown in FIG. 2A to the state shown in FIG. As shown in FIG. 2C, the groove 7 may be completely closed.

In such a case, as shown in FIG. 3 (a), the width of the entrance of the groove 7 is made wider than that of the other part, so that the groove 7 formed by the deposition of the reaction product 15 is formed. It is possible to significantly extend the time until the blockage, and it is possible to significantly increase the operating rate of the ion implantation device. Also, the groove 7
The narrow width portion becomes short, the groove 7 can be easily processed, and the processing cost can be reduced.

In the first embodiment described above, the width of the groove 7 provided in the insulating bushing 11 in the depth direction is constant, but in the ion implantation apparatus of the present embodiment, only the width of the entrance of the groove 7 is changed. By making the width wide, it is possible to prevent the groove 7 from being filled with the reaction product 15 even if the aspect ratio is high and the width of the groove 7 is narrow as a whole.
Thereby, the cleaning or replacement cycle of the insulating bushing 11 can be extended.

Although FIG. 3 (a) shows an example in which the width changes in two steps, the same effect can be obtained with other shapes as long as the width of the entrance is wider than the depth of the groove 7. be able to. Further, as shown in FIG. 3B, the width of the groove 7 may decrease proportionally from the entrance of the groove 7 to a predetermined depth, and then the width may become constant. Also, FIG.
As shown in (c), the groove may have a triangular cross section in which the width of the groove 7 decreases proportionally from the entrance of the groove 7 to a predetermined depth. Further, the groove may have a curved width.

(Third Embodiment) Next, an ion implantation apparatus according to a third embodiment of the present invention will be described with reference to FIG. The ion implanter of the present embodiment has substantially the same structure as the ion implanter of the first embodiment, but the shapes of insulating bushing 11 and groove 7 of ion source generation chamber 10 are different.

In the ion implanter of the present embodiment, the deposition of the reaction product 15 in the groove 7 is reduced, and the groove 7 is reduced.
It is possible to significantly increase the time until the occlusion. This will be described below with reference to FIG.

In the ion source generation chamber 10 of the ion implantation apparatus of this embodiment, the insulating bushing 11 is divided into two parts A and B so as to partition the ion source support portion flange 5 and the ion beam generation chamber flange 6. Is separated into
An insulating bushing is formed by bonding the parts A and B together. Further, the O-ring portion 20 is provided in the third groove provided in both the bonding type insulating bushings 11 forming the groove 7 to maintain the vacuum state of the ion source generating chamber. The third groove and the O-ring portion 20 are provided so as to circumferentially partition the surface where the A portion and the B portion are in contact with each other into the atmospheric pressure side and the vacuum side. Further, the comb-shaped groove 7a is formed by forming the rectangular second groove on the bonding surface and then bonding the second groove.

By forming such a groove, even if a conductive reaction product is formed on the inner surface of the groove 7 during long-term use, almost no reaction product is formed in the comb-shaped groove 7a. To provide an ion implanter capable of preventing a decrease in creeping resistance of the insulating bushing 11 or a dielectric breakdown due to a creeping discharge, reducing the work of removing a reaction generation part by regular maintenance, and enabling stable operation. You can

In FIG. 4, the cross section of the comb-shaped groove 7a is rectangular, but it is not limited to a rectangular shape, and the same effect can be obtained by forming it in a wedge shape or a curved shape.

(Fourth Embodiment) Next, an ion implantation apparatus according to a fourth embodiment will be described with reference to FIGS. 5 and 6. In the first to third embodiments, the insulating bushing 1 is used.
Various methods have been described for forming the groove 7 on the inner surface of the insulating bushing 11 in order to prevent the conductive reaction product 1 from being deposited on the inner surface of the insulating bushing 1 to reduce the creeping resistance of the insulating bushing and generate the creeping discharge. .

However, even if the above-mentioned first embodiment is adopted.
Even if the ion implantation apparatus according to the third embodiment is used, when the applied voltage of the ion source is high, the ion support flange 5 and the ion beam generating chamber flange 6 as flanges made of a metal material such as SUS are used. Electric discharge occurs at the contact surface between the insulating bushing 11 and the insulating bushing 11 made of an insulating material. Then, the discharge generated at the contact surface may spread along the ion implantation direction on the inner surface of the insulating bushing 11, and eventually dielectric breakdown may occur between the flanges. The ion implantation apparatus of this embodiment has a configuration for preventing the above problems.

The above description will be more specifically described as follows. The contact surface between the ion source support flange 5 and the insulating bushing 11 of the ion source generation chamber 10 of the ion implantation apparatus according to the present embodiment has a wedge-shaped gap as shown in FIG. 35 may occur. Wedge-shaped gap 3 formed by the ion source support portion flange 5 to which a high voltage is applied and the insulating bushing 11
It is known that a high electric field is generated at the tip portion 36 of No. 5, and depending on the voltage applied to the ion source support portion flange 5 and the degree of vacuum in the ion beam generating chamber 1, discharge from the tip portion 36 may occur. Insulation bushing 1
1 may extend along the inner peripheral surface, and eventually dielectric breakdown may occur between the flanges.

It is generally known that when θ in FIG. 6B is smaller than 90 degrees, electric field concentration occurs at the tip portion (wedge portion) 36 as shown in FIG. 6C. As shown, by setting the angle θ to 90 degrees or more, it becomes possible to prevent the electric field concentration at the tip portion 36 as described above. As a result, it is possible to prevent a discharge from being generated from the tip portion 36, and the discharge to extend along the inner surface of the insulating bushing 11 to cause dielectric breakdown. The angle θ of the tip portion 36 as the wedge portion is 90 degrees, that is, the angle of the corner portion of the bottom surface of the cutout portion is 90 degrees or more, and the distance between the ion source support portion flange 5 and the insulating bushing 11 is a distance. FIG. 6 shows an example in which the surface of the insulating bushing 11 is cut out so as to be d.
It shows in (c). In the present embodiment, d = 1 mm,
The length of the notch is 5 mm.

Further, as can be seen from the overall configuration diagram of the ion source generating chamber 10 of the ion implantation apparatus of the present embodiment shown in FIG. 5, the above notch is shown as a flange surface notch 30. In the above embodiment, an example in which the notch is provided on the surface of the insulating bushing 11 is shown, but the same effect can be obtained by providing the notch on the ion source support portion flange 5.
Further, the notch may be provided on both the insulating bushing 11 and the ion source support portion flange 5.

Further, in the above example, the notch is formed between the ion source support portion flange 5 to which a high electric field is applied and the insulating bushing 11, but the discharge may be on the ground side depending on the polarity of the applied voltage. In this case, a similar notch is formed in the portion between the ion beam generating chamber flange 6 on the ground side and the insulating bushing 11 on the ion beam generating chamber flange 6 side and the insulating bushing 11 side. , Or both on the ion beam generating chamber flange 6 and the insulating bushing 11,
The discharge prevention effect can be efficiently obtained.

As described above, the flange notch surface 30 is formed on the contact surface between the ion source support portion flange 5 and the insulating bushing 11.
By forming the above, even if a conductive reaction product adheres to the inner surface of the flange surface, the electric discharge that triggers the dielectric breakdown does not occur from the contact surface.
It is no longer necessary to process unevenness (or corrugation) to increase the creepage distance applied to the inner surface of the. That is, it is possible to form the insulating bushing 11 having a cylindrical (straight in cross section) inner surface. Thereby, the insulating bushing 11 can be formed by a simple process while obtaining the effect of preventing discharge.

Further, in addition to the notch of the present embodiment, the grooves 7 and 7 shown in each of the first to third embodiments are shown.
By applying a to the inner surface of the insulating bushing 11, the above effect is further improved, and the distance between the ion source support portion flange 5 and the ion beam generating chamber flange 6 can be shortened.

(Fifth Embodiment) Next, an ion implantation apparatus according to a fifth embodiment will be described with reference to FIG. Embodiment 1
In the ion source generation chamber 10 of the ion implantation apparatus according to the fourth embodiment, the inside of the groove 7 portion is formed by providing a continuous groove 7 on the inner surface of the insulating bushing 11 on the outer side in the circumferential direction (atmosphere side). Even if the product adheres to
An example has been shown in which the ion source support portion flange 5 and the ion beam generation chamber flange 6 are not short-circuited by a conductive reaction product, and creeping discharge can be prevented.

In the ion source generation chamber 10 of the ion implanter of the present embodiment, instead of providing the continuous groove 7 on the inner surface of the insulating bushing 11 toward the outside (atmosphere side) along the circumferential direction, The problem is to be solved by providing the insulating ring 40 made of an insulating material on the top of the convex portion on the inner peripheral surface of the insulating bushing 11.

As shown in FIG. 7, a plurality of insulating rings 40 are provided.
Is fixed to a convex portion on the inner surface of the insulating bushing 11 with a screw (not shown) formed of an insulating material, and has a detachable structure. Each insulation ring 40 has 2
It is mounted with a space of mm.

As a result, even if various reaction products generated when the ion beam is generated adhere to the inner surface of the insulating bushing 11, the reduction of the creeping resistance of the insulating bushing 11 or the dielectric breakdown due to the creeping discharge is prevented, and the reaction generated by the periodic maintenance is generated. It is possible to provide an ion implantation device that can reduce the work of removing a substance and can obtain a stable operating state. Further, even when the reaction product adheres to the surface of the insulating ring 40, it can be easily removed and washed.

In FIG. 7, the insulating ring 40 is composed of four parts so as to be aligned in the ion implantation direction of the insulating bushing 11, but the number may be any number.
The distance between each of them is not limited to 2 mm. However,
When the insulating rings 40 were provided at intervals of 2 mm or more and used for a long time, the adhesion of reaction products to the insulating bushing 11 was observed.

Although the ion implanters of the first to fifth embodiments have been described above, the inventions described therein can be used alone, but the inventions of the respective ion implanters can be combined. The same effect or more can be obtained.

It should be understood that the embodiments disclosed this time are illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description but by the scope of the claims, and is intended to include meanings equivalent to the scope of the claims and all modifications within the scope.

[0066]

According to the ion implanter and the semiconductor device manufactured by using the ion implanter of the present invention, the creeping resistance of the inner surface of the insulating bushing does not decrease and the replacement period of the insulating bushing is significantly extended to enable long-term stable treatment. Becomes

[Brief description of drawings]

FIG. 1 is a cross-sectional view for explaining a structure of an ion source generation chamber of an ion implantation device according to a first embodiment.

FIG. 2 is a cross-sectional view for explaining a process in which a reaction product adheres to a groove formed in an insulating bushing of an ion source generation chamber of the ion implantation apparatus according to the first embodiment.

FIG. 3 is a cross-sectional view for explaining a structure of a groove formed in an insulating bushing of an ion source generation chamber of an ion implantation device according to a second embodiment.

FIG. 4 is a cross-sectional view for explaining a structure of a groove formed in an insulating bushing of an ion source generation chamber of an ion implantation device according to a third embodiment.

FIG. 5 is a cross-sectional view for explaining the structure of an ion source generation chamber of the ion implantation device according to the fourth embodiment.

FIG. 6 is a cross-sectional view for explaining a wedge-shaped gap formed between an insulating bushing and a flange of an ion source generation chamber of the ion implantation apparatus according to the fourth embodiment.

FIG. 7 is a cross-sectional view for explaining the structure of an ion source generation chamber of the ion implantation apparatus according to the fifth embodiment.

FIG. 8 is a cross-sectional view for explaining the structure of an ion source generation chamber of a conventional ion implanter.

[Explanation of symbols]

1 Ion Beam Generation Chamber, 2 High Voltage Power Supply, 3 Ion Source Support, 4 Ion Source, 5 Ion Source Support Flange, 6 Ion Beam Generation Chamber Flange, 7
Groove, 7a comb-shaped groove, 10 ion source generation chamber, 11
Insulation bushing, 15 reaction product, 20 O-ring part, 30 flange notch, 35 wedge-shaped gap, 36
High electric field generator, 40 insulating ring.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kenji Shirakawa             2-6-2 Otemachi 2-chome, Chiyoda-ku, Tokyo             Ryoden Engineering Co., Ltd. (72) Inventor Minoru Hanazaki             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. F-term (reference) 4K029 BD01 DE02 DE03                 5C034 CC01

Claims (15)

[Claims] 1. A mass spectrometric analysis of ions generated from an ion source in a vacuum ion generation container, and selecting a predetermined ion based on the result of the mass analysis accelerates the predetermined ion. And a high potential part for generating ions from the ion source, wherein the ion generating container is provided with an inner peripheral surface inside the ion generating container. And a ground potential part, and provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container, and insulate the high potential part and the ground potential part. An insulating portion for separating the high potential portion and the ground potential portion from the inner peripheral surface of the insulating portion toward the outer side of the ion generating container over the entire circumference of the inner peripheral surface of the insulating portion. There is a groove toward It was ion implanter. 2. The groove has an aspect ratio of 5 or more,
The ion implanter according to claim 1, wherein the width of the groove is 1 mm or less. 3. The ion implanter according to claim 1, wherein the groove has a width at an open end of the groove larger than a width at a closed end of the groove. 4. The ion implantation apparatus according to claim 1, wherein a second groove further extends from a side surface of the groove. 5. The inner peripheral surface of the insulating portion has a concavo-convex shape in which a convex portion and a concave portion provided so as to partition the high potential portion and the ground potential portion are repeated, and the groove is the convex portion. The uppermost position of the portion and the lowermost position of the recess are provided in at least one of
The ion implantation apparatus according to claim 4. 6. The insulating part is composed of a plurality of parts for partitioning the high potential part and the ground potential part, and a surface of the plurality of parts contacting each other has a circumference of an inner peripheral surface of the insulating part. A third groove is provided so as to partition the contact surface along a direction, and the third groove is provided with airtightness between the inside and the outside of the insulating portion along the entire circumference of the third groove. The ion implantation apparatus according to claim 1, further comprising an airtight holding member for holding. 7. The ion implanter according to claim 1, wherein the groove is provided in at least one of the vicinity of the high potential portion and the vicinity of the ground potential portion. . 8. A mass spectrometric analysis of ions generated from an ion source in a vacuum ion generation container, and selecting a predetermined ion based on the result of the mass analysis accelerates the predetermined ion. And a high potential part for generating ions from the ion source, wherein the ion generating container is provided with an inner peripheral surface inside the ion generating container. And a ground potential part, and provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container, and insulate the high potential part and the ground potential part. An insulating part for, at least one of the high potential part and the insulating part of the portion where the high potential part and the insulating part are in contact, of the high potential part and the insulating part Few And over the entire circumference of one of the inner peripheral surface either also provided with a notch directed outwardly from one of the inner peripheral surface of at least one of the high potential portion and the insulating portion, the ion implantation apparatus. 9. A mass spectrometric analysis of ions generated from an ion source in an ion generation container in a vacuum state, and selecting a predetermined ion based on the result of the mass analysis accelerates the predetermined ion. And a high potential part for generating ions from the ion source, wherein the ion generating container is provided with an inner peripheral surface inside the ion generating container. And a ground potential part, and provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container, and insulate the high potential part and the ground potential part. An insulating part for, and at least one of the ground potential part and the insulating part of the part where the ground potential part and the insulating part are in contact, of the ground potential part and the insulating part Over the entire circumference of the at least one of the inner circumferential surface, provided with a notch directed outwardly from one of the inner peripheral surface of at least one of the ground potential portion and the insulating portion, the ion implantation apparatus. 10. The ion implanter according to claim 8, wherein an angle of a corner portion of a bottom surface of the groove formed by the notch is 90 degrees or more. 11. Accelerating the predetermined ions by mass-analyzing the ions generated from the ion source in the ion generating container in a vacuum state and selecting the predetermined ions based on the result of the mass analysis. And a high potential part for generating ions from the ion source, wherein the ion generating container is provided with an inner peripheral surface inside the ion generating container. And a ground potential part, and provided between the high potential part and the ground potential part so as to have an inner peripheral surface inside the ion generating container, and insulate the high potential part and the ground potential part. An insulating portion for separating the high potential portion and the ground potential portion, along the entire inner peripheral surface of the insulating portion, along the inner peripheral surface of the insulating portion, insulation Sex ring Ion implantation apparatus. 12. The ion implanter according to claim 11, wherein a plurality of the rings are provided, and the plurality of the rings are installed at intervals. 13. The ion implanter according to claim 11, wherein the ring has a removable structure. 14. The ion implantation apparatus according to claim 1, wherein the inner peripheral surface of the insulating portion is formed in a tubular shape as a whole. 15. A method of manufacturing a semiconductor device, wherein ion implantation is performed using the ion implantation apparatus according to any one of claims 1 to 14.