JP2003077106A - Magneto-resistance effect head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magneto-resistance effect head wherein by improving the reproduction output of the magneto-resistance effect head having a flux guide, good reproducing characteristics are obtained, and reliability is high. SOLUTION: The magneto-resistance effect head 10 slid on a magnetic head to perform reproduction is constructed in such a manner that a magneto- resistance effect element 11 is arranged to be retreated from a sliding surface on a recording medium 20, shield layers 17, 12 are respectively arranged above and below the magneto-resistance effect element 11, a sense current flows in a direction vertical to the magneto-resistance effect element 11, a flux guide 15 for guiding a magnetic flux is connected to the magneto-resistance effect element 11, its tip is arranged to face the sliding surface 20, and at least one of electrodes 16 and 13 for supplying the sense current is insulated from the shield layer 12 of the electrode 13 side.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is mounted on a magnetic disk drive or a magnetic tape drive and uses a magnetic disk or a magnetic tape as a recording medium. The present invention relates to a magnetoresistive head suitable for use in a magnetic head.

[0002]

2. Description of the Related Art A magnetoresistive head (hereinafter referred to as an MR head) is used as a magnetic head for reproducing a recording medium because of its high sensitivity to an external magnetic field.

In a high-density magnetic disk drive or the like, a giant magnetoresistive effect element with high reproduction sensitivity, a so-called GMR element, is incorporated in an MR head for reproduction in order to improve recording density. The magnetoresistive ratio of the GMR element used in this MR head is about 8%.

Further, in a magnetic tape drive, an MR head incorporating a so-called anisotropic magnetoresistive effect element (AMR element) having a magnetoresistive ratio of about 2% is used.

[0005]

By the way, in the magnetic tape drive, since the magnetic head slides on the magnetic tape, there arises a problem that the reproduction characteristics fluctuate due to wear of the magnetic head.

When an MR head is used as a flying type magnetic head in which the recording medium and the magnetic head do not slide, the magnetoresistive effect element (MR element) faces the surface of the magnetic head facing the recording medium. . As a result, the distance between the MR element and the recording medium becomes short, and a large reproduction output can be obtained.

On the other hand, when an MR head is used for a sliding type magnetic head in which a magnetic head and a magnetic tape slide like a magnetic tape drive, a magnetoresistive effect element (MR element) is used. When facing the surface of the head that slides on the recording medium, the element film of the MR element is dragged by abrasion, and the characteristics of the MR element deteriorate. As a result, the reproducing characteristics of the MR head fluctuate, and the reliability of the reproducing magnetic head deteriorates.

In order to suppress the change over time in the reproducing characteristics of the magnetic head due to this wear, it is conceivable to use a magnetic flux induction type (hereinafter flux guide) MR head.

However, in general, a magnetic head having a flux guide has a flux guide length of 1 μm because the MR element of the magnetic field detecting element is separated from the surface of the magnetic recording medium.
When m, it is considered that the head reproduction output becomes half or less as compared with the case where the MR element faces the magnetic recording medium surface.

Therefore, when the MR head is used as the sliding type magnetic head, not only the structure of the flux guide MR head but also the reproduction output of the flux guide MR head is required to be improved.

In order to solve the above-mentioned problems, in the present invention, by improving the reproduction output of a magnetoresistive head having a flux guide, a good reproduction characteristic can be obtained and a highly reliable magnetic resistance can be obtained. An effect type head is provided.

[0012]

The magnetoresistive head of the present invention is for reproducing by sliding on a recording medium, and the magnetoresistive element is retracted from the sliding surface with the recording medium. The shield layers are respectively arranged above and below the magnetoresistive effect element, a sense current is flowed in a direction perpendicular to the magnetoresistive effect element, and a flux guide for guiding a magnetic flux is connected to the magnetoresistive effect element. The tip of the flux guide is arranged so as to face the sliding surface, and at least one of the upper electrode and the lower electrode for flowing a sense current to the magnetoresistive effect element is insulated from the shield layer on the electrode side. It is a thing.

According to the above-described structure of the magnetoresistive head of the present invention, since the magnetoresistive effect element is arranged so as to recede from the sliding surface with respect to the recording medium, it is worn by sliding on the recording medium. Even if occurs, the magnetoresistive effect element is not worn, so that the characteristics of the magnetoresistive effect element are not deteriorated.
Further, since the flux guide for guiding the magnetic flux is connected to the magnetoresistive effect element, and the tip of this flux guide faces the sliding surface, it is possible to guide the leakage magnetic field from the recording medium to the magnetoresistive effect element through the flux guide. .
Furthermore, since at least one of the upper electrode and the lower electrode for flowing a sense current to the magnetoresistive effect element is insulated from the shield layer on the electrode side, one shield layer insulated from this electrode Is in a floating state in terms of potential. Therefore, even if the one shield layer and the other shield layer are short-circuited due to the above-mentioned wear, current is not shunted to the short-circuited portion, so that the sense current amount flowing in the magnetoresistive effect element should not be reduced. Will be possible.

The magnetoresistive head of the present invention is for reproducing by sliding on the recording medium, and the magnetoresistive effect element is arranged so as to recede from the sliding surface with respect to the recording medium. Shield layers are arranged above and below the element, a sense current flows in the direction perpendicular to the magnetoresistive effect element, and a flux guide that guides magnetic flux is connected to the magnetoresistive effect element, and the tip of this flux guide slides. The flux guide is arranged so as to face the moving surface, and the flux guide has a laminated structure of a first flux guide layer connected to the magnetoresistive effect element and a second flux guide layer thereon.

According to the above-described structure of the magnetoresistive head of the present invention, the first flux guide layer in which the flux guide is connected to the magnetoresistive element and the second flux guide layer on the first flux guide layer are formed.
Since it is possible to separately form each flux guide layer by using the laminated structure with the flux guide layer of No. 1 and the second flux guide layer need not be directly connected to the magnetoresistive effect element, It is possible to freely set the thickness of the second flux guide layer. For this reason, the degree of freedom in setting the thickness of the flux guide layer is increased, and for example, the total thickness of the flux guide layer can be increased to induce more magnetic flux in the magnetoresistive effect element.

The magnetoresistive head of the present invention is for reproducing by sliding on the recording medium, and the magnetoresistive effect element is arranged so as to recede from the sliding surface on the recording medium. Shield layers are arranged above and below the element, a sense current flows in the direction perpendicular to the magnetoresistive effect element, and a flux guide that guides magnetic flux is connected to the magnetoresistive effect element, and the tip of this flux guide slides. The antiferromagnetic film is disposed so as to face the moving surface, and the antiferromagnetic film is disposed with respect to the flux guide and exchange coupled with the flux guide.

According to the above-described structure of the magnetoresistive head of the present invention, the antiferromagnetic film is arranged especially for the flux guide and exchange coupled with the flux guide, so that the antiferromagnetic film is formed. A bias magnetic field can be applied across the width of the flux guide by exchange coupling. As a result, the flux guide is made into a single magnetic domain and stabilized.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention is a magnetoresistive head for reproducing by sliding on a recording medium, wherein a magnetoresistive effect element is arranged so as to recede from a sliding surface with respect to the recording medium. Shield layers are arranged above and below the resistance effect element,
A sense current is passed in the direction perpendicular to the magnetoresistive effect element, a flux guide that guides magnetic flux is connected to the magnetoresistive effect element, and the tip of this flux guide is arranged so as to face the sliding surface. A magnetoresistive head in which at least one of the upper electrode and the lower electrode for flowing a sense current to the effect element is insulated from the shield layer on the electrode side.

The present invention is a magnetoresistive head for reproducing by sliding on a recording medium, in which the magnetoresistive effect element is arranged so as to recede from the sliding surface with respect to the recording medium. Shield layers are arranged on the top and bottom respectively, a sense current is passed in the direction perpendicular to the magnetoresistive effect element, and a flux guide that guides magnetic flux is connected to the magnetoresistive effect element, and the tip of this flux guide is the sliding surface. Is a magnetoresistive head having a laminated structure of a first flux guide layer having a flux guide connected to the magnetoresistive effect element and a second flux guide layer on the first flux guide layer.

Further, according to the present invention, in the magnetoresistive head, the first flux guide layer is extended further rearward than the rear end of the magnetoresistive element with respect to the sliding surface.

Further, according to the present invention, in the magnetoresistive head, the second flux guide layer has an overlapping amount with the magnetoresistive element which is less than half the height of the magnetoresistive element.

The present invention is a magnetoresistive effect type head for reproducing by sliding on a recording medium, wherein the magnetoresistive effect element is arranged so as to recede from a sliding surface with respect to the recording medium. Shield layers are arranged on the top and bottom respectively, a sense current is passed in the direction perpendicular to the magnetoresistive effect element, and a flux guide that guides magnetic flux is connected to the magnetoresistive effect element, and the tip of this flux guide is the sliding surface. Is a magnetoresistive head having an antiferromagnetic film arranged to face the flux guide and exchange coupled with the flux guide.

Further, according to the present invention, in the above-mentioned magnetoresistive head, Cu is provided between the flux guide and the antiferromagnetic film.
The film is arranged.

Further, according to the present invention, in the above magnetoresistive head, hard magnetic layers for stabilization are arranged on both sides of the exchange-coupled flux guide and antiferromagnetic film.

According to the present invention, in the above magnetoresistive head, the magnetoresistive element has a magnetization free layer and a magnetization fixed layer, and the width of the flux guide is not less than the width of the magnetization free layer. And

First, an outline of the present invention will be described prior to a specific embodiment of the present invention. The present invention relates to a magnetoresistive effect element (M head) of a magnetoresistive head (MR head).
A so-called CPP (Current Perpendicular to the Plane) in which a sense current is passed in the direction perpendicular to the R element)
Type magnetoresistive head (MR head). The CPP magnetoresistive head (MR head) is slid on the recording medium to reproduce the recording medium.

The CPP type magnetoresistive head is compared with a so-called CIP (Current In the Plane) type magnetoresistive head in which a sense current is passed in a direction parallel to the film surface with respect to the magnetoresistive element. Since the contact area with the electrode layer made of a metal film with good thermal conductivity is large, electromigration does not easily occur even if the current density is increased, and a narrow gap and a narrow track width compatible with high recording density can be obtained. It has the advantages that can be realized. Further, in the CIP type magnetoresistive head, it is necessary to insulate the magnetic shield from the magnetoresistive element.
In the magnetoresistive head of the type, since the magnetic shield is electrically connected to the magnetoresistive effect element and there is no need to insulate them, the gap between the magnetoresistive effect element and the magnetic shield can be narrowed.

In recent years, a magnetic tunnel element (TMR element) using a ferromagnetic tunnel junction having a ferromagnetic metal / insulator / ferromagnetic metal structure having a magnetoresistive ratio of 40% or more.
Is about to be applied to a magnetoresistive head (MR head). This magnetic tunnel element is used as an MR head MR
When adopted as an element, the above-mentioned CPP type MR head is constructed.

Magnetic tunnel element (TMR element) and CPP
Type MR giant magnetic resistance effect element (GMR element) or the like is used as an MR element, that is, in a CPP type MR head, the magnetic shields arranged above and below the MR element are also used as electrodes for flowing a sense current. It is configured to be electrically connected to the electrodes.

Here, in this CPP type MR head, the same structure as that of the floating type MR head which does not slide on the recording medium, that is, as shown in the sectional view of FIG. 55A, MR element 5 is used.
It is assumed that the structure 1 faces the sliding surface. in this case,
As a result of abrasion due to sliding on the recording medium, not only the deterioration of the MR element 51 described above but also the metal formed on the sliding surface by the drag of the shield film of the lower shield 52 and the upper shield 54 as shown in FIG. 55B. MR by membrane 55
A short circuit occurs between the element 51 and the lower shield 52 or the upper shield 54. When a short circuit occurs in this way,
Since the current is also shunted to the metal film 55, the sense current flowing in the MR element 51 in the vertical direction decreases, and
The reproduction output of the element 51 will decrease.

Therefore, in the present invention, in order to prevent the deterioration of the MR element 51 and the short circuit between the MR element 51 and the lower shield 52 or the upper shield 54, the MR element is retracted from the sliding surface with the recording medium. Instead of not facing the sliding surface, a magnetic flux induction type (flux guide) structure, that is, a structure in which the flux guide is connected to the MR element is adopted, and the tip of this flux guide is made to face the sliding surface.

Here, as a reference example of the present invention, a CPP type MR adopting a configuration of a magnetic flux induction type (flux guide).
A cross-sectional view of one form of the head is shown in FIG. In this CPP type MR head, an MR element (eg, GMR element, TMR element) 61 is provided between a lower shield 62 and an upper shield 67.
Are arranged, the lower shield 62 and the MR element 61 are electrically connected via the lower electrode 63 made of a nonmagnetic conductive film, and the upper shield 67 and the MR element 61 are connected to the upper electrode 66 made of a nonmagnetic conductive film. It is electrically connected via. Through these lower electrode 63 and upper electrode 66, M
A sense current flows in the R element 61 in a direction perpendicular to the element.

The MR element 61 is arranged so as to recede from the sliding surface 70 with the recording medium so as not to face the sliding surface 70. A flux guide 65 made of a soft magnetic film is provided on the sliding surface 70 side of the MR element 61 and is connected to the MR element 61. The tip of the flux guide 65 faces the sliding surface 70. When a GMR element or TMR element is used as the MR element 61,
The flux guide 65 is connected to the magnetization free layer side.

With the configuration shown in FIG. 56, the flux guide 6
5, the magnetic flux from the recording medium is induced in the MR element 61. Further, since the MR element 61 does not come into contact with the sliding surface 70, the element film of the MR element 61 is not dragged even if abrasion occurs due to sliding with the recording medium. Can be prevented from deteriorating.

However, in the structure shown in FIG. 56, there is a problem that the reproduction output becomes small because the MR element 61 is separated from the sliding surface 70 as described above.

Further, in the case where the upper and lower magnetic shields of the MR element 61, that is, the upper shield 67 and the lower shield 62 are electrically connected to the electrodes 66 and 63, respectively, as shown in FIG. As a result of the abrasion due to the sliding, as shown in FIG. 57, the magnetic shield film of the upper shield 67 or the lower shield 62 or the drag of the flux guide 65 causes a metal film 71 to be generated, and the flux guide 65 or the upper shield 67 and the lower shield 62. And may be short-circuited. At this time, the current flowing between the upper electrode 66 and the lower electrode 63 causes the upper shield 67-
It is also shunted to the metal film 71 between the lower shield 62,
As a result, the sense current flowing through the MR element 61 may decrease, and the reproduction output of the MR head may decrease.

Further, the flux guide 65 needs to have a certain thickness or more in order to collect the leakage magnetic flux from the recording medium and efficiently guide it to the MR element. In the structure shown in FIG. 56, since the upper electrode (non-magnetic conductive gap film) 66 of the MR element is provided on the flux guide 65, the flux guide 6 is formed to facilitate the formation of the upper electrode 66.
The thickness of No. 5 is not so thick and the step is made small. When the thickness of the flux guide 65 is relatively thin, the leakage magnetic flux from the recording medium cannot be efficiently guided to the MR element 61, and the reproduction output cannot be improved sufficiently.

Further, when the length of the flux guide 65 becomes long, the distance from the sliding surface 70 to the MR element 61 becomes long, so that the reproduction efficiency is lowered as described above. Therefore, in order to suppress a decrease in reproduction efficiency, magnetic connection between the flux guide and the magnetization free layer of the MR element becomes very important.

Further, the track width (reading width) of the magnetic head for the magnetic tape drive is 10 μm wider than that of the magnetic head for the hard disk. Therefore, when the MR head shown in FIG. 56 is applied to a magnetic head for a magnetic tape drive, the flux guide 65 can be obtained only by the conventional stabilization method using a permanent magnet film.
It has become very difficult to effectively stabilize the soft magnetic film of (1), that is, to form a single magnetic domain.

In the present invention, the flux guide is M
The configuration is such that the configuration is connected to the R element, and further, the configuration corresponding to each of the problems described above in the comparative configuration shown in FIG. 56 is adopted. That is, the following configurations are adopted in response to each problem. (1) In order to solve the problem of a short circuit between the flux guide and the shield layer, at least one of the electrode layers is insulated from the shield layer on the electrode layer side. (2) In order to solve the problem that the thickness of the flux guide cannot be taken, a flux guide having a two-layer structure of a first layer connected to the MR element and a second layer thereon is used. (3) Exchange coupling with the antiferromagnetic film in order to stabilize the flux guide.

Next, specific embodiments of the present invention will be described. First, an embodiment for solving the problem of the short circuit between the flux guide 65 and the lower shield 62 shown in FIG. 57 will be described below.

FIG. 1 and FIG. 2 show schematic configuration diagrams (cross-sectional views) of a magnetoresistive head (MR head) as one embodiment of the present invention. FIG. 1 shows a sectional view of a magnetoresistive head (MR head), and FIG. 2 shows a sectional view of a sliding surface of the MR head of FIG. 1 with a recording medium.

In the present embodiment, the MR element is not a giant magnetoresistive effect element (so-called GMR element) used in a general reproducing head, but a ferromagnetic tunnel element (magnetic tunnel element) having further excellent magnetic field sensitivity. : TMR element).

The problem of the magnetic tunnel element that has been considered so far is that the magnetic tunnel element has an insulating tunnel barrier layer, so that the resistance value of the element is much higher than that of the conventional spin valve type GMR element. It is expensive. However, for magnetic tape drives such as for tape storage,
Since a head having a relatively wide track width of about 10 μm is used, the required resistance value of the magnetic tunnel element is not as high as that of the hard disk drive. Therefore, it is considered that the MR head using the magnetic tunnel element is suitable for a magnetic head for tape storage.

The magnetoresistive head (MR head) 10 shown in FIGS. 1 and 2 has a lower shield 12 formed on a substrate (not shown) and an upper shield 17 formed on the upper shield. The above-mentioned magnetic tunnel element (TM) is used as the MR element 11 between the shields 17.
R element) is arranged and formed.

The magnetic tunnel element (TMR element) is formed by arranging two layers of soft magnetic films 1 and 3 via a tunnel insulating layer, and one soft magnetic film 1 is connected with an antiferromagnetic film 13. When the magnetization is fixed, it becomes a magnetization fixed layer, and the other soft magnetic film 3 becomes a magnetization free layer whose direction of magnetization is rotated by a magnetic field from the outside. In the present embodiment, the magnetization fixed layer 1 is arranged below the tunnel insulating layer 2, and the magnetization free layer 3 is arranged above the tunnel insulating layer 2.

An upper electrode 16 and a lower electrode 13 are connected to the upper and lower sides of the magnetic tunnel element (TMR element) 11, respectively, and the magnetic tunnel element (TMR element) 11 is connected through the upper electrode 16 and the lower electrode 13. The sense current can flow in the vertical direction. The lower electrode 13
Also serves as an antiferromagnetic film for fixing the magnetization of the magnetization fixed layer 1 of the magnetic tunnel element 11. The sense current flowing in the direction perpendicular to the magnetic tunnel element 11 flows through the tunnel insulating layer 2 and the resistance value changes depending on the magnetization direction of the magnetization free layer 3 to change the amount of current. This makes it possible to detect a change in the magnetic field from the outside.

With the above structure, a so-called CPP type magnetoresistive head (MR head) in which a sense current flows in a direction perpendicular to the magnetic tunnel element (TMR element) 11.
10 are configured. MR head 10 of the present embodiment
Since the TMR element 11 is adopted as the MR element, it is also called a (CPP type) TMR head.

Further, the magnetic tunnel element 11 is arranged at a position retracted rearward with respect to the sliding surface 20 which slides on the recording medium, and does not face the sliding surface 20. A flux guide 15 made of a soft magnetic film is formed on the magnetization free layer 3 of the magnetic tunnel element 11. The tip of the flux guide 15 has a sliding surface 2
It is facing 0.

On the sliding surface 20, the flux guide 15 and the upper shield 17 and the lower shield 12 are magnetically separated by the non-magnetic gap film 14. Further, a hard film (hard magnetic film) 21 is arranged on the left and right of the flux guide 15, and a bias magnetic field can be applied by the hard film 21 to stabilize the magnetization of the flux guide 15. The hard film 21 corresponds to the permanent magnet film described above.

In this embodiment, in particular, electrodes 13 and 16 connected above and below the MR element (TMR element in this case) 11.
Among them, the lower electrode 13 and the lower shield 12 are insulated by the insulating gap film 14. This causes the lower shield 12 to be in a floating state in terms of potential, and even if a conductive film similar to the conductive film 71 of FIG. 57 is formed on the sliding surface 20 due to drag due to abrasion, the conductive film 20 moves to the lower shield 12. Does not flow current.

On the other hand, the upper shield 17 is connected to the upper electrode 16 which also serves as a non-magnetic conductive gap film, and the upper shield 17 and the flux guide 15 are electrically connected through the upper electrode 16. Therefore, even if the conductive film is formed on the sliding surface 20, the conduction state of the upper shield 17 and the flux guide 15 does not change. Therefore, a current shunt due to a short circuit through the conductive film does not occur, so that the sense current amount in the MR element 11 does not decrease.

The MR head 10 of this embodiment can be manufactured, for example, as follows. In the following description of the manufacturing method, specific configurations such as the material and film thickness of each thin film were applied to a 1 Gbit / inch ² MR head having a gap length between upper and lower shields of 0.3 μm and a track width of 5 μm. Describe the case. 3 to 15, FIGS. 3A to 15A are plan views, and FIGS. 3B to 15B.
Shows a sectional view taken along line X-X of each plan view.

First, as shown in FIGS. 3A and 3B, a ferromagnetic thin film 5 such as FeAlSi or NiFe to be the lower shield 12 is formed on a substrate 4 made of, for example, aluminum titanium carbide by sputtering or plating to a thickness of 3 μm.
The film is formed to a thickness of m.

Next, Al ₂ O is formed on the ferromagnetic thin film 5.
₃ Thin film 6A is formed to a thickness of 70 μm by sputtering,
After that, the thickness is reduced to about 50 nm by a polishing technique.
Subsequently, a so-called spin valve type magnetic tunnel element 11 in which an antiferromagnetic film and one soft magnetic film are exchange-coupled is formed, and as shown in FIGS. 4A and 4B, this magnetic tunnel element (TMR element) 11 is formed. Is etched into a desired shape (L shape in FIG. 4A).

Specifically, for example, Ta (thickness 3 nm) /
NiFe (thickness 3 nm) / IrMn (thickness 10 nm) /
CoFe (film thickness 4 nm) / Al oxide (film thickness 1.3 n
m) / CoFe (film thickness 4 nm) / NiFe (film thickness 5 n)
m) / Ta (film thickness 5 nm) is sequentially formed in this order by sputtering to form a magnetic tunnel element (TMR element) 11 including these laminated films. Of this laminated film, CoFe / NiFe is the soft magnetic film having the magnetoresistive effect, that is, the magnetization free layer 3 which serves as the magnetically sensitive portion of the magnetic tunnel element 11. Further, IrMn / CoFe is the magnetization fixed layer 1.
Is. The lowermost layer of Ta / NiFe is the antiferromagnetic film 13 that also serves as the lower electrode, and the Al oxide is the tunnel insulating film 2.

Then, as shown in FIGS. 5A and 5B,
The Al ₂ O ₃ film 6B is formed over the entire surface to form the TMR element 11
The pattern is embedded. Although FIGS. 4A and 5A show plan views of eight MR heads 10, FIG. 6A and subsequent drawings are enlarged views showing plan views of two MR heads 10.

Next, in order to determine the read width of the TMR element 11, an antiferromagnetic film (PtMn film) which also serves as a lower electrode.
The laminated film of the TMR element 11 is etched up to the top of 13. Then, an Al ₂ O ₃ film 6C having a film thickness of, for example, 40 nm is formed by the sputtering method, and the surface is further flattened.
This state is shown in FIGS. 6A and 6B. At this time, TMR
Etching is performed so that the width D1 of the laminated film of the element 11 is narrower than the width D2 of the antiferromagnetic film 13 also serving as the lower electrode.

Subsequently, the easy axis of magnetization of the magnetization free layer 3 of the TMR element 11 is parallel to the sliding surface 20 with no magnetic field,
In addition, heat treatment is performed so that the easy axis of magnetization of the magnetization fixed layer 1 is perpendicular to the sliding surface 20.

After that, a resist (not shown) that regulates the pattern of the flux guide film is formed on the TMR element 11, and a NiFe film is sputtered. Then, by performing lift-off, the flux guide film 7 is formed as shown in FIGS. 7A and 7B.

Then, a photoresist pattern (not shown) for a hard film / electrode for giving a stabilizing bias magnetic field is formed by a photolithography technique. Then, using this photoresist pattern as a mask, the flux guide film 7 is etched by an ion etching technique to form a flux guide 15 having a predetermined pattern. Next, CoCrP to be the hard film / electrode film 21.
A t / TiW / Ta thin film is formed by the sputtering method, and the photoresist pattern is removed. 8A and 8B show
The state at this time is shown.

Next, a Ta film having a film thickness of 100 nm, for example, is formed by a sputtering method, thereby forming a Ta film shown in FIGS.
As shown in B, an upper magnetic gap conductive film that also serves as the upper electrode 16 is formed. In the present embodiment, the flux guide 15, the hard film 21, and the TMR element 11 are all covered with the upper electrode 16.

After that, as shown in FIGS. 10A and 10B, a contact hole 8 is formed in the insulating film 6C on one end of the lower electrode 13 by wet etching.

Next, as shown in FIGS. 11A and 11B, the ferromagnetic thin film 5 to be the lower shield 12 is etched to separate the individual MR heads 10.

Subsequently, by a lift-off method using a resist, as shown in FIG. 12A and FIG. 12B, 2 are formed so as to be connected to the upper electrode 16 or the lower electrode 13, respectively.
A Cu lead wire 18 is formed. The lower electrode 13 is
The lead 18 is connected by Cu filling the connection hole 8.

Next, as shown in FIGS. 13A and 13B, a resist 19 is formed so as to cover the connecting portion of the lead wire 18, and the resist 19 is cured. This resist 1
Reference numeral 9 is formed for surface flattening and insulation separation (insulation separation of the lead wire 18 for the lower electrode 16 and the upper shield 17).

Subsequently, a ferromagnetic material to be the upper shield 17, for example, NiFe, is formed to have a film thickness of about 2 μm by the frame plating method, and is wet-etched as shown in FIG. 14A.
And the upper shield 17 having the desired shape shown in FIG. 14B.
To form. In FIG. 14A, illustration of the resist 19 formed in FIG. 13A is omitted. The resist 19 is formed to have a width slightly wider than that of the upper layer shield 17 formed thereon to facilitate frame plating for forming the upper layer shield 17.

Next, as shown in FIGS. 15A and 15B, on the lead wire 18, for example, Cu having a height of 100 μm is formed.
The terminal 9 is formed. Subsequently, although not shown, an alumina protective film is formed to a thickness of 20 μm so as to cover the surface, and the wafer process is completed. Then, the wafer on which a large number of MR heads 10 are formed is cut into chips of each MR head 10.

After that, a guard material is attached to the chip of the MR head 10 and processed into a desired shape such as a processing for forming the sliding surface 20, so that the shape of the M shown in FIGS.
The R head 10 can be manufactured.

The TMR element 11 is not limited to the above-mentioned film structure, and an appropriate material and film thickness may be adopted according to the requirements of the system of the apparatus in which the MR head is used.

According to the present embodiment described above, since the lower shield 12 and the lower electrode 13 are insulated,
The lower layer shield 12 is in a floating state in terms of potential. Thereby, even if the lower layer shield 12 and the flux guide 15 or the upper layer shield 17 are short-circuited by forming a conductive film on the sliding surface 20 by sliding with the recording medium.
It is possible to prevent current from flowing through the lower shield 12.

Therefore, since there is no current shunt to the conductive film formed on the sliding surface 20, it is possible to prevent a decrease in the amount of sense current flowing through the TMR element 11, and to induce a magnetic flux through the flux guide 15. The reproduction output of the TMR element 11 can be improved.

As described above, since the reproduction output of the TMR element 11 does not decrease due to the short circuit, high reliability can be obtained. Further, since the defect rate in manufacturing the MR head 10 can be reduced, the manufacturing can be performed with a high yield.

In the above-mentioned configuration of this embodiment,
By changing the film structure of the MR element, it is possible to use another MR element such as a GMR element. For example, in a GMR element, a conductive Cu film is arranged instead of the insulating Al oxide film arranged between the magnetization fixed layer and the magnetization free layer.

Further, in the above-described present embodiment, the magnetization free layer 3 is located above the tunnel insulating layer 2 and the flux guide 15 is connected to the upper side of the magnetization free layer 3. In the invention, since the insulation between the flux guide and at least one of the magnetic shields may be maintained,
Other configurations are also possible. An embodiment in that case is shown below.

FIG. 16 shows a magnetoresistive head (MR) for solving the problem of short circuit between the flux guide and the magnetic shield.
FIG. 11 is a schematic configuration diagram (cross-sectional view in a direction perpendicular to the sliding surface) of another embodiment of the head). MR head 2 of the present embodiment
Similarly to the previous embodiment, 5 insulates the lower electrode 13 and the lower shield 12 from each other, and further insulates the upper electrode 16 and the upper shield 17 from each other. The structure is insulated from the electrode layers 13 and 16.

Specifically, the upper electrode 16 is not formed above the flux guide 15, but the upper surface of the upper electrode 16 is aligned with the upper surface of the flux guide 15 so that the upper surface of the flux guide 15 and the upper electrode 16 and the upper layer shield 17 are connected to each other. The spaces are insulated by an insulating film (insulating gap film) 31 such as alumina.

A lead electrode 18B is connected to the rear end of the upper electrode 16, and the lead electrode 18B is connected to the lead electrode 18B.
Are insulated from the lead electrode 18A for the lower electrode 13 and the upper shield 17 by the insulating film 14 such as alumina. The other configuration is the MR head 1 shown in FIGS.
The same as 0.

In the present embodiment, the upper shield 17 also floats in potential, so that it is possible to more effectively prevent a decrease in the amount of sense current flowing in the TMR element 11 due to a short circuit. That is, even if a conductive film is formed on the sliding surface 20 due to abrasion, since the flux guide 15, the lower shield 12, and the upper shield 17 are insulated from each other, there is no path for current to flow through the conductive film and Does not occur.

Further, the upper gap film 31 is formed on the upper electrode 16
Since it is not used also for, there is an advantage that the gap length can be adjusted by setting the film thickness of the upper gap film 31 relatively freely.

FIG. 17 shows a magnetoresistive head (MR) for solving the problem of short circuit between the flux guide and the magnetic shield.
The schematic block diagram (cross-sectional view in the direction perpendicular to the sliding surface) of still another embodiment of the head) is shown. In the MR head 26 of the present embodiment, the flux guide 15 is connected to the TMR element 11
Is connected to the lower shield 12 side, and the upper electrode and the upper shield are insulated by alumina. For this reason, the upper and lower sides of the MR element 11 are opposite to those of the previous embodiments, and the magnetization free layer 3 is arranged on the lower shield 12 side.
The magnetization fixed layer 1 is arranged on the upper shield 17 side, and the flux guide 15 is connected to the magnetization free layer 3.

Lower shield 12 and flux guide 15
Are electrically connected to each other via a non-magnetic conductive gap film 32 which also serves as a lower electrode. The connection between the upper electrode 16 and the extraction electrode 18B for the upper electrode 16 is as shown in FIG.
Is similar to.

In this embodiment, the flux guide 15
Since the upper electrode 16 and the upper shield 17 are insulated from each other by the insulating film (insulating gap film) 33 such as alumina, the upper shield 17 is in a potential floating state. As a result, even if the sliding surface 20 is worn and a metal film is formed due to sliding with the recording medium, the upper shield 1
No current flows through 7. Therefore, as in the previous embodiments, it is possible to prevent the amount of sense current flowing through the TMR element 11 from decreasing.

From the embodiment of FIG. 1 and the embodiment of FIG. 17, one of the magnetic shields 17 (12) is replaced by the electrode layer 16
It is understood that, when electrically connecting to (13), it is preferable to dispose the magnetization free layer 3 and the flux guide 15 of the TMR element 11 on the side of one of the magnetic shields 17 (12). The same applies when the magnetic shield is also used as the electrode layer.

Next, an embodiment for solving the problems of the thickness of the flux guide and the efficiency of inducing magnetic flux in the MR element in the structure shown in FIG. 56 will be described below.

FIG. 18 shows another embodiment of the present invention.
The schematic block diagram (cross section) of an MR head is shown. This MR head 41 employs a structure in which the lower electrode 13 and the lower shield 12 similar to those shown in FIG. 1 are insulated. Also in this embodiment, the TMR element 11 is used as the MR element.

In the present embodiment, the flux guide 15 is formed so as to extend further rearward from the rear end of the TMR element 11. Also, the flux guide 15 is TM
A first flux guide layer 15A connected to the magnetization free layer of the R element 11 and the first flux guide layer 15
It has a two-layer structure with the second flux guide layer 15B formed on A.

Further, the second flux guide layer 15B
Is formed to be thicker than the first flux guide layer 15A, and only a very small portion of the rear is formed in the TMR element 11A.
And the amount of overlap with the TMR element 11 is small.

The first flux guide layer 15A is TM
The amount of extension to the rear of the rear end of the R element 11 is preferably 1 μm or more. From the simulation results, 1
It has been found that a sufficient effect can be obtained by extending it backward by more than μm.

The thick second flux guide layer 15B makes it possible to induce a very large amount of magnetic flux to the TMR element 11 as compared with the structure shown in FIG.

Second flux guide layer 15B and TMR
The amount of overlap with the element 11 is preferably 50% or less of the height of the TMR element 11. In FIG. 18, TMR
The overlap amount is about 15% of the height of the element 11. In this way, since the amount of overlap between the second flux guide layer 15B and the TMR element 11 is small, the second flux guide layer 15B can lead the leakage magnetic flux from the recording medium by concentrating on the short overlap portion. .

The MR head 41 of this embodiment can be manufactured, for example, as follows. In the following description of the manufacturing method, specific configurations such as the material and film thickness of each thin film were applied to a 1 Gbit / inch ² MR head having a gap length between upper and lower shields of 0.3 μm and a track width of 5 μm. Describe the case. In addition, FIGS.
19A to 32A are plan views, and FIGS. 19B to 32B are cross-sectional views taken along line XX of each plan view.

First, as shown in FIGS.
~ Similar to FIG. 5, after forming each layer up to the laminated film forming the TMR element 11, the TMR element 1 is formed by the Al ₂ O ₃ film 6B.
The pattern 1 is embedded.

Next, as shown in FIGS. 22A and 22B, as in FIGS. 6A and 6B, in order to determine the read width of the TMR element 11, the antiferromagnetic film 1 also serving as the lower electrode is formed.
3, the laminated film of the TMR element 11 is etched to have a width narrower than that of the antiferromagnetic film 13, and then an Al ₂ O ₃ film 6C is formed to a film thickness of 40 nm by a sputtering method, and the surface is further flattened. Turn into.

Subsequently, the easy axis of magnetization of the magnetization free layer 3 of the TMR element 11 is parallel to the sliding surface 20 without a magnetic field,
In addition, heat treatment is performed so that the easy axis of magnetization of the magnetization fixed layer 1 is perpendicular to the sliding surface 20.

Thereafter, a resist (not shown) that regulates the pattern for the first flux guide layer is formed on the TMR element 11. Since the first flux guide layer also serves as a flux guide on the back side of the magnetoresistive effect element, the pattern for the first flux guide layer is located at a position higher than the end position of the TMR element 11, that is, the rear end of the TMR element 11. A resist is formed so as to be extended (protruded) by 1 μm or more. Subsequently, a NiFe film is formed by a sputtering method and lift-off is performed, so that a NiFe film is formed as shown in FIGS.
As shown in FIG. 3B, the first flux guide layer becomes the first
The flux guide film 7A is formed.

Further, although not shown, a resist for regulating the pattern for the second flux guide layer is formed on the first flux guide film 7A. At this time, the resist is formed so that the pattern for the second flux guide layer overlaps about 0.5 μm above the TMR element 11. Then, NiFe is sputtered.
A second flux guide film 7 to be a second flux guide layer is formed as shown in FIGS. 24A and 24B by forming a film with a film thickness of 30 nm and performing lift-off.
Form B.

Subsequently, a photoresist pattern (not shown) for the hard film and electrode for giving a stabilizing bias magnetic field is formed by the photolithography technique. Then, by using the photoresist pattern as a mask, the first and second flux guide films 7A and 7B are etched by an ion etching technique to form a predetermined pattern of the first flux guide layer 15A and the second flux guide layer 15B. The flux guide 15 is formed. Next, CoCrPt / which becomes the hard film / electrode film 21.
A TiW / Ta thin film is formed by a sputtering method, and the photoresist pattern is removed. 25A and 25B show
The state at this time is shown. Here, the thickness and area of the hard film 21 are made larger than those in FIGS. 8A and 8B because the flux guide 15 including the first flux guide layer 15A and the second flux guide layer 15B is thick.

Next, a Ta film having a film thickness of 100 nm, for example, is formed by a sputtering method to form an upper magnetic gap conductive film which also serves as the upper electrode 16 as shown in FIGS. 26A and 26B. Also in this embodiment, the flux guides 15A and 15B, the hard film 21, and the TMR element 11 are all covered with the upper electrode 16.

After that, as shown in FIGS. 27 to 32,
Each manufacturing process is performed similarly to FIGS. That is, the lower electrode 13 is formed by wet etching the contact hole.
The connection hole 8 is formed on the upper side, the lower shield 12 is etched to separate the individual MR heads 10, and the Cu lead wire 1 is formed.
8 is formed. Then, a resist 19 is formed so as to cover the connecting portion of the lead wire 18, the resist 19 is cured, and then the upper shield 17 is formed in a predetermined pattern, and the Cu terminal 9 is formed on the lead wire 18. Further, although not shown, an alumina protective film having a thickness of 20 μm is formed and the wafer process is completed.

Then, after cutting the wafer on which a large number of MR heads 10 are formed into chips of each MR head 10,
The MR head 41 having the shape shown in FIG. 18 can be manufactured by attaching a guard material to the chip of the MR head 10 and processing it into a desired shape such as processing for forming the sliding surface 20.

According to the above-described embodiment, the flux guide 15 has the two-layer structure including the first flux guide layer 15A connected to the TMR element 11 and the second flux guide layer 15B on the first flux guide layer 15A. , The flux guide layers 15A and 15B can be formed separately, and the second flux guide layer 15B is formed of TMR.
Since it is not necessary to directly connect to the element 11, it is possible to set the thickness of the second flux guide layer 15B in particular freely. Thereby, the flux guide layer 15A,
Since the degree of freedom in setting the thickness of 15B can be increased, for example, the total thickness of the flux guide layer can be increased to induce more magnetic flux in the TMR element 11.

Further, since the first flux guide layer 15A is formed to extend rearward from the rear end of the TMR element 11, the magnetic flux can be guided over the entire height direction of the TMR element 11.

Further, the second flux guide layer 15B
Is partially overlapped on the TMR element 11, and the overlap amount is 50% or less of the height of the TMR element 11, the flux guide 15 (15A, 15A
B) and the magnetization free layer 3 of the TMR element 11 are completely magnetically coupled to each other, and the second flux guide layer 15B and the TMR element
Through the overlapping part of the element 11, the magnetic flux can be induced in the magnetization free layer 3 in a concentrated manner.

Therefore, according to the present embodiment, the TMR element 1 is provided through the flux guide 15 (15A, 15B).
Since a large amount of magnetic flux can be concentrated and induced in the first magnetization free layer 3, the TMR element 11 can achieve high reproduction efficiency.

Also in the above-described structure of the present embodiment, it is possible to change the film structure of the MR element to another MR element such as a GMR element. For example, in a GMR element, conductive C is used instead of the insulating Al oxide film arranged between the magnetization fixed layer and the magnetization free layer.
Place the u-membrane.

The structure in which the flux guide has a two-layer structure as in the above-described present embodiment can be similarly applied to the structure shown in FIG. 16 and the structure shown in FIG. FIG. 33 shows an MR head 42 having a structure to which a two-layer structure flux guide is applied in the structure shown in FIG. 16, and an MR head 43 having a structure to which a two-layer structure flux guide is applied in the structure shown in FIG. 34.

Next, an embodiment for solving the problem of stabilizing the flux guide (single magnetic domain) in the structure shown in FIG. 56 will be described below.

FIG. 35 shows a schematic configuration diagram (cross-sectional view) of an MR head as still another embodiment of the present invention. This MR head 45 has a lower electrode 13 similar to that shown in FIG.
And the lower shield 12 is insulated. Also in this embodiment, the TMR element 11 is used as the MR element.
Has been adopted.

Further, FIG. 36 shows an enlarged sectional view of a portion where the TMR element 11 and the flux guide 15 overlap each other in FIG. In the present embodiment, FIG.
5 and FIG. 36, the flux guide 15
An antiferromagnetic film 34 is disposed on the above, and the flux guide 15 and the antiferromagnetic film 34 are exchange-coupled. By disposing the antiferromagnetic film 34 on the flux guide 15 made of a ferromagnetic film and performing exchange coupling, so-called long-distance exchange interaction is generated, and a bias magnetic field can be applied to the entire width direction of the flux guide 15. it can. As a result, even if the hard film 21 alone cannot apply a sufficient bias magnetic field to the central portion of the flux guide 15, the antiferromagnetic film 34 can apply a bias magnetic field.

A Cu film 35 is formed as an intermediate layer between the flux guide 15 made of a ferromagnetic film and the antiferromagnetic film 34.
By arranging, the bias magnetic field can be changed.

Here, the track width when applied to the reproducing head is determined by the distance between the permanent magnet films, that is, the hard films 21. This distance is preferably wider than the width of the magnetization free layer 3 in consideration of the possibility of short circuit between the upper electrode 16 and the lower electrode 13 side such as the magnetization fixed layer 1 and the effect of concentration of magnetic flux on the magnetization free layer 3. Therefore, the widths of the flux guide 15, the antiferromagnetic film 34, and the Cu film 35 are made wider than the width of the magnetization free layer 3, that is, the TMR element 11.

As described above, the widths of the flux guide 15, the antiferromagnetic film 34, and the Cu film 35 are made wider than the width of the magnetization free layer 3, that is, the TMR element 11.
As can be seen from FIG. 36, the hard film 21 and the TMR element 11
It can be seen that each layer is insulated with a margin by the insulating layer 14, and a short circuit between the lower electrode 13 side and the upper electrode 16 side through the hard film 21 does not occur.

The MR head 45 of this embodiment can be manufactured, for example, as follows. In the following description of the manufacturing method, specific configurations such as the material and film thickness of each thin film were applied to a 1 Gbit / inch ² MR head having a gap length between upper and lower shields of 0.3 μm and a track width of 5 μm. Describe the case. 37 to 55.
37A to 55A are plan views, and FIGS. 37B to 55B are cross-sectional views taken along line XX of each plan view.

First, as shown in FIGS. 37 to 39, as shown in FIG.
~ Similar to FIG. 5, after forming each layer up to the laminated film forming the TMR element 11, the TMR element 1 is formed by the Al ₂ O ₃ film 6B.
The pattern 1 is embedded.

In this embodiment, as the laminated film of the TMR element 11, Ta / NiFe / I of each of the previous embodiments is used.
rMn / CoFe / Al oxide / CoFe / NiFe /
Instead of Ta, a laminated film having the following structure is adopted (FIG. 36).
reference). That is, for example, Ta (thickness 3 nm) / NiFe (thickness 3 nm) / PtMn (thickness 30 nm) / CoFe (thickness 2 nm) / Ru (thickness 0.8 nm) / CoFe (thickness 2 nm) / Al oxide ( Film thickness 1.3nm) / CoFe
(Film thickness of 4 nm) is sequentially formed in this order by sputtering to form a magnetic tunnel element (TMR element) 11 including these laminated films. Of this laminated film, C
Ofe is the soft magnetic film having a magnetoresistive effect, that is, the magnetization free layer 3 that serves as the magnetically sensitive portion of the magnetic tunnel element 11. Also,
The magnetization fixed layer 1 is PtMn / CoFe / Ru / CoFe. The magnetization fixed layer 1 of this structure is made of CoFe 2
The magnetization fixed layer 1 has a laminated ferri structure and is formed by sandwiching a nonmagnetic film 1B made of Ru between two soft magnetic films 1A.
The lowermost layer of Ta / NiFe is the antiferromagnetic film 13 that also serves as the lower electrode, and the Al oxide is the tunnel insulating film 2.

Next, as shown in FIGS. 40A and 40B, as in FIGS. 6A and 6B, in order to determine the read width of the TMR element 11, the antiferromagnetic film 1 also serving as the lower electrode 1 is formed.
3, the laminated film of the TMR element 11 is etched to have a width narrower than that of the antiferromagnetic film 13, and then an Al ₂ O ₃ film 6C is formed to a film thickness of 40 nm by a sputtering method, and the surface is further flattened. Turn into.

Subsequently, the easy axis of magnetization of the magnetization free layer 3 of the TMR element 11 is parallel to the sliding surface 20 without a magnetic field,
In addition, heat treatment is performed so that the easy axis of magnetization of the magnetization fixed layer 1 is perpendicular to the sliding surface 20.

After that, a resist (not shown) that regulates the pattern for the flux guide layer is formed on the TMR element 11. Subsequently, a NiFe film is formed by a sputtering method and lift-off is performed, thereby forming a flux guide film 7 serving as a flux guide, as shown in FIGS. 41A and 41B, as in FIGS. 7A and 7B. .

Further, on the flux guide film 7, a Cu film (intermediate layer) (not shown) and a resist that regulates the pattern for the antiferromagnetic film are formed. Then, Cu film and Pt
By sequentially forming Mn films by a sputtering method and performing lift-off, as shown in FIGS. 42A and 42B,
The Cu film 35 and the antiferromagnetic film 34 are formed.

Then, a photoresist pattern (not shown) for the hard film and electrode for giving a stabilizing bias magnetic field is formed by the photolithography technique. Then, using the photoresist pattern as a mask, the flux guide film 7, the Cu film 35, and the antiferromagnetic film 34 are etched by an ion etching technique to form the flux guide 15 having a predetermined pattern, and the flux guide 15 is formed by Cu. A structure is formed through exchange coupling with the antiferromagnetic film 34 via the film 35. Next, a CoCrPt / TiW / Ta thin film to be the hard film / electrode film 21 is formed by a sputtering method, and the photoresist pattern is removed.
43A and 43B show the state at this time. Here, the thickness of the hard film 21 is made thicker than that of FIG. 8B corresponding to the total thickness of the flux guide layer 15, the Cu film 35, and the antiferromagnetic film 34.

Next, a Ta film having a film thickness of 100 nm, for example, is formed by a sputtering method to form an upper magnetic gap conductive film which also serves as the upper electrode 16 as shown in FIGS. 44A and 44B. Also in this embodiment, the flux guide 15, the hard film 21, and the TMR element 11 are all covered with the upper electrode 16.

After that, as shown in FIGS. 45 to 50,
Each manufacturing process is performed similarly to FIGS. That is, the lower electrode 13 is formed by wet etching the contact hole.
The connection hole 8 is formed on the upper side, the lower shield 12 is etched to separate the individual MR heads 10, and the Cu lead wire 1
8 is formed. Then, a resist 19 is formed so as to cover the connecting portion of the lead wire 18, the resist 19 is cured, and then the upper shield 17 is formed in a predetermined pattern, and the Cu terminal 9 is formed on the lead wire 18. Further, although not shown, an alumina protective film having a thickness of 20 μm is formed and the wafer process is completed.

Then, after cutting the wafer on which a large number of MR heads 10 are formed into chips of each MR head 10,
The MR head 45 having the shape shown in FIGS. 35 and 36 can be manufactured by attaching a guard material to the chip of the MR head 10 and processing it into a desired shape such as processing for forming the sliding surface 20.

Here, the hysteresis of the magnetization free layer when a bias magnetic field is applied only by long-range exchange interaction is shown in FIG.
4A. The horizontal axis shows the applied magnetic field (Oe), and the horizontal axis shows T.
The MR ratio, that is, the magnetoresistive ratio (%) of the TMR element 11 is shown.
Note that FIG. 54A shows data when the track width is 1.5 μm. If the track width is 1.5 μm,
It can be seen that the hysteresis of the magnetization free layer is slightly larger.

Next, FIG. 54B shows changes in the track width and the hysteresis of the magnetization free layer depending on the bias magnetic field application method.
Shown in. The horizontal axis represents the track width (μm), the vertical axis represents the hysteresis area of the magnetization free layer, and this hysteresis area is a relative value standardized by the element having the minimum area. FIG. 54
From B, in the case of only long-distance exchange interaction due to exchange coupling with the antiferromagnetic film, the hysteresis of the magnetization free layer increases as the track width decreases. On the other hand, in the case of only the hard bias action of the permanent magnet film (hard film), the larger the track width, the larger the hysteresis of the magnetization free layer. Therefore, in order to reduce the hysteresis without depending on the track width, it is found that it is optimal to make both functions coexist.

According to the present embodiment described above, the antiferromagnetic film 34 is arranged on the flux guide 15, and the flux guide 15 and the antiferromagnetic film 34 are exchange-coupled to each other. Bias magnetic fields can be applied across the width of the flux guide 15 by creating a distance exchange interaction.

As a result, it is expected that the flux guide 15 can be stabilized in the widthwise direction, that is, the magnetic domain can be made into a single magnetic domain, and the reproducing sensitivity can be constant over the entire track width of the TMR element 11. Therefore, a highly reliable magnetic head suitable for a tape storage system having a wide track width can be realized.

Since the intermediate layer made of the Cu film 55 is arranged between the flux guide 15 and the antiferromagnetic film 54, the bias magnetic field of the antiferromagnetic film 54 changes depending on the thickness of the Cu film 55. The bias magnetic field can be adjusted.

Further, by disposing the permanent magnet film (hard film) 21 on both sides of the flux guide 15, a hard bias action can be generated, and the antiferromagnetic film 3
Together with the long-range exchange interaction according to 4, it becomes possible to stabilize over a wide range of track widths, as shown in FIG. 54B.

Further, the width of the flux guide 15 is TM
By making the width larger than the width of the magnetization free layer 3 of the R element 11, the magnetic flux can be induced in the magnetization free layer 3 in a concentrated manner. Moreover, it is possible to prevent a short circuit between the upper electrode 16 side and the lower electrode 13 side (for example, the magnetization fixed layer 1 or the like) through the hard film 21.

Also in the above-mentioned configuration of the present embodiment, it is possible to change the film configuration of the MR element to another MR element such as a GMR element. For example, in a GMR element, conductive C is used instead of the insulating Al oxide film arranged between the magnetization fixed layer and the magnetization free layer.
Place the u-membrane.

In the above-described present embodiment, the structure in which the antiferromagnetic film 34 is exchange-coupled to the flux guide 15 is applied to the structure shown in FIG. 1, but the structure shown in FIG. The same can be applied to the configuration shown in FIG. 17 and the configuration shown in FIG. FIG. 51 shows an MR head 46 having a structure in which the flux guide and the exchange coupling of the antiferromagnetic film are applied in the configuration shown in FIG.
52 shows an MR head 47 having a structure to which exchange coupling of a flux guide and an antiferromagnetic film is applied in the configuration shown in FIG. 52, and a structure to which exchange coupling of a flux guide and an antiferromagnetic film is applied in the configuration shown in FIG. MR head 4
8 is shown in FIG. In FIG. 53, the antiferromagnetic film is exchange-coupled not only over the second flux layer 15B but also over the first flux layer 15A extending rearward from the TMR element 11, but Flux layer 15B
It is also possible to adopt a configuration in which only the exchange coupling is performed.

In each of the above-mentioned embodiments, the dimensional ratios in the drawings do not necessarily match the dimensional ratios in the actual magnetoresistive head. Further, the material and film thickness of each layer are not limited to those in the above-described embodiment, and other materials and film thicknesses can be used.

The present invention is not limited to the above-mentioned embodiments, and various other configurations can be adopted without departing from the gist of the present invention.

[0136]

According to the present invention described above, by insulating at least one electrode from the magnetic shield, even if a metal film is formed on the sliding surface due to abrasion with the recording medium, the metal film is formed through the flux guide. The current can be prevented from being shunted, the reproduction output of the magnetoresistive effect element can be prevented from lowering, and a highly reliable magnetoresistive head can be configured. Further, it is possible to prevent defective products from being produced during the production and to perform the production with a high yield.

According to the present invention described above, the thickness of each flux guide layer can be arbitrarily set by the flux guide having the two-layer structure of the first flux guide layer and the second flux guide layer. The degree of freedom in setting can be increased, and the total thickness of the flux guide can be increased to induce more magnetic flux in the magnetoresistive effect element.

In particular, when the flux guide and the magnetoresistive effect element are overlapped by 50% or less of the height of the magnetoresistive effect element, the flux guide and the magnetoresistive effect element are completely magnetically coupled by the overlap. It can be overlapped with 50
The magnetic flux can be induced by concentrating on the portion of less than%.
Thereby, high regeneration efficiency can be obtained.

According to the present invention described above, since the antiferromagnetic film is exchange-coupled to the flux guide, a bias magnetic field can be applied over the entire track width of the flux guide, so that the reproducing sensitivity is improved over the entire track width. It becomes possible to make it constant. Therefore, it is possible to realize a magnetoresistive head having high reliability suitable for a tape storage system having a wide track width.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram (cross-sectional view) of a magnetoresistive head (MR head) according to an embodiment of the present invention.

2 is a cross-sectional view of a sliding surface of the MR head of FIG. 1 with a recording medium.

3A and 3B are process drawings showing a manufacturing process of the MR head of FIG.

4A and 4B are process diagrams showing a manufacturing process of the MR head of FIG.

5A and 5B are process diagrams showing a manufacturing process of the MR head of FIG.

6A and 6B are process drawings showing a manufacturing process of the MR head shown in FIGS.

7A and 7B are process diagrams showing a manufacturing process of the MR head of FIG.

8A and 8B are process diagrams showing a manufacturing process of the MR head of FIG.

9A and 9B are process diagrams showing a manufacturing process of the MR head shown in FIGS.

10A and 10B are process diagrams showing a manufacturing process of the MR head of FIG.

11A and 11B are process diagrams showing a manufacturing process of the MR head of FIG.

12A and 12B are process diagrams showing a manufacturing process of the MR head of FIG.

13A and 13B are process diagrams showing a manufacturing process of the MR head of FIG.

14A and 14B are process drawings showing a manufacturing process of the MR head shown in FIGS.

15A and 15B are process drawings showing a manufacturing process of the MR head shown in FIGS.

FIG. 16 is a schematic configuration diagram (cross-sectional view) of an MR head according to another embodiment of the present invention.

FIG. 17 is a schematic configuration diagram (cross-sectional view) of an MR head according to still another embodiment of the present invention.

FIG. 18 is a schematic configuration diagram (cross-sectional view) of an MR head according to another embodiment of the present invention.

19A and 19B are process diagrams showing a manufacturing process of the MR head of FIG.

20A and 20B are process diagrams showing a manufacturing process of the MR head of FIG.

21A and 21B are process drawings showing a manufacturing process of the MR head of FIG.

22A and 22B are process diagrams showing a manufacturing process of the MR head of FIG.

23A and 23B are process diagrams showing a manufacturing process of the MR head of FIG.

24A and 24B are process drawings showing a manufacturing process of the MR head of FIG.

25A and 25B are process diagrams showing a manufacturing process of the MR head of FIG.

26A and 26B are process diagrams showing a manufacturing process of the MR head of FIG.

27A and 27B are process drawings showing a manufacturing process of the MR head of FIG.

28A and 28B are process drawings showing a manufacturing process of the MR head of FIG.

29A and 29B are process drawings showing a manufacturing process of the MR head of FIG.

30A and 30B are process drawings showing a manufacturing process of the MR head of FIG.

31A and 31B are process diagrams showing a manufacturing process of the MR head of FIG.

32A and 32B are process diagrams showing a manufacturing process of the MR head of FIG.

33 is a cross-sectional view of an MR head having a structure in which a flux guide having a two-layer structure is applied in the structure shown in FIG.

34 is a cross-sectional view of an MR head having a structure in which a flux guide having a two-layer structure is applied in the structure shown in FIG.

FIG. 35 is a schematic configuration diagram (cross-sectional view) of an MR head according to still another embodiment of the present invention.

36 is a sectional view of a portion where the TMR element and the flux guide of the MR head of FIG. 35 overlap.

37A and 37B are process diagrams showing a manufacturing process of the MR head of FIG. 35.

38A and 38B are process drawings showing a manufacturing process of the MR head of FIG. 35.

39A and 39B are process drawings showing a manufacturing process of the MR head of FIG. 35.

40A and 40B are process diagrams showing a manufacturing process of the MR head of FIG. 35.

41A and 41B are process drawings showing a manufacturing process of the MR head of FIG. 35.

42A and 42B are process diagrams showing a manufacturing process of the MR head of FIG. 35.

43A and 43B are process drawings showing a manufacturing process of the MR head of FIG. 35.

44A and 44B are process diagrams showing a manufacturing process of the MR head of FIG. 35.

45A and 45B are process diagrams showing a manufacturing process of the MR head of FIG. 35.

46A and 46B are process drawings showing a manufacturing process of the MR head of FIG. 35;

47A and 47B are process diagrams showing the manufacturing process of the MR head of FIG. 35.

48A and 48B are process drawings showing a manufacturing process of the MR head of FIG. 35.

49A and 49B are process drawings showing a manufacturing process of the MR head of FIG. 35;

50A and 50B are process drawings showing a manufacturing process of the MR head shown in FIG. 35;

51 is a cross-sectional view of an MR head having a structure to which exchange coupling of a flux guide and an antiferromagnetic film is applied in the configuration shown in FIG.

52 is a cross-sectional view of an MR head having a structure to which exchange coupling of a flux guide and an antiferromagnetic film is applied in the configuration shown in FIG.

53 is a sectional view of an MR head having a structure to which exchange coupling of a flux guide and an antiferromagnetic film is applied in the configuration shown in FIG.

FIG. 54 is a diagram showing hysteresis of a magnetization free layer when a bias magnetic field is applied only by A long-range exchange interaction. FIG. 6 is a diagram showing changes in hysteresis of a magnetization free layer depending on a B track width and a bias magnetic field application method.

FIG. 55 is a diagram showing a sliding surface of a conventional CPP MR head. B FIG. 55A is a diagram showing a state in which a metal film has been formed on the sliding surface due to wear in FIG. 55A.

FIG. 56 is a schematic diagram (cross-sectional view) of an MR head having a flux guide.

57 is a diagram showing a state where a metal film is formed on the sliding surface of the MR head having the structure of FIG. 56 by abrasion.

[Explanation of symbols]

10, 25, 26, 41, 42, 43, 45, 46, 4
7, 48 MR head, 11 TMR element, 12 lower shield, 13 lower electrode, 15 flux guide,
15A First flux guide layer, 15B Second flux guide layer, 16 Upper electrode, 17 Upper shield, 21 Hard film, 34 Antiferromagnetic film, 35 Cu film

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Junichi Sugawara             6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni             -Inside the corporation F term (reference) 2G017 AC01 AC07 AD55 AD65                 5D034 BA03 BA18 BB08 CA08                 5E049 AA01 AA04 AA07 AA09 AC00                       AC05 BA12 CB01 DB12 GC01

Claims (8)

[Claims] 1. A magnetoresistive effect head for reproducing by sliding on a recording medium, wherein the magnetoresistive effect element is arranged so as to recede from a sliding surface with respect to the recording medium. Shield layers are respectively arranged on the upper and lower sides, a sense current is flowed in a direction perpendicular to the magnetoresistive effect element, and a flux guide for inducing magnetic flux is connected to the magnetoresistive effect element, and the tip of the flux guide is At least one of the upper electrode and the lower electrode for passing the sense current through the magnetoresistive element is disposed so as to face the sliding surface, and is insulated from the shield layer on the electrode side. A magnetoresistive head. 2. A magnetoresistive head for reproducing by sliding on a recording medium, wherein the magnetoresistive element is arranged so as to recede from a sliding surface with respect to the recording medium. Shield layers are respectively arranged on the upper and lower sides, a sense current is flowed in a direction perpendicular to the magnetoresistive effect element, and a flux guide for inducing magnetic flux is connected to the magnetoresistive effect element, and the tip of the flux guide is The flux guide is arranged so as to face the sliding surface, and the flux guide has a laminated structure of a first flux guide layer connected to the magnetoresistive effect element and a second flux guide layer thereon. And a magnetoresistive head. 3. The first flux guide layer according to claim 2, wherein the first flux guide layer extends further rearward than the rear end of the magnetoresistive effect element with respect to the sliding surface. Magnetoresistive head. 4. The magnetic material according to claim 2, wherein the second flux guide layer has an overlapping amount with the magnetoresistive effect element that is half or less of a height of the magnetoresistive effect element. Resistance effect type head. 5. A magnetoresistive head for reproducing by sliding on a recording medium, wherein the magnetoresistive element is arranged so as to recede from a sliding surface with respect to the recording medium. Shield layers are respectively arranged on the upper and lower sides, a sense current is flowed in a direction perpendicular to the magnetoresistive effect element, and a flux guide for inducing magnetic flux is connected to the magnetoresistive effect element, and the tip of the flux guide is A magnetoresistive head, which is arranged so as to face the sliding surface, has an antiferromagnetic film arranged on the flux guide, and is exchange-coupled with the flux guide. 6. The magnetoresistive head according to claim 5, wherein a Cu film is arranged between the flux guide and the antiferromagnetic film. 7. The magnetoresistive head according to claim 5, wherein hard magnetic layers for stabilization are disposed on both sides of the exchange-coupled flux guide and the antiferromagnetic film. 8. The magnetoresistive effect element has a magnetization free layer and a magnetization fixed layer, and the width of the flux guide is not less than the width of the magnetization free layer. The magnetoresistive head described.