JP2003059914A - Plasma treatment equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the nonuniformity of substrates to be treated due to the distribution of activated species by producing plasma in annular shape in a plasma chamber. SOLUTION: Single wafer processing substrate processing equipment has a processing chamber 12 and processes wafers W one by one under reduced pressure. To supply activated species produced by remote plasma to a wafer W in the processing chamber 12, a plasma chamber 14 is formed at the upper part of the processing chamber 12 for producing plasma 10. A cylindrical window 26 protruded in convex shape toward the plasma chamber 14 is formed at the upper part of the center of the plasma chamber 14. An induction coil 29 which applies high-frequency power to a recess 27 outside thereof is installed so that plasma in annular shape is produced on the inner circumferential surface of the plasma chamber 14 on the outer circumferential surface of the cylindrical window 26.

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a plasma processing apparatus.
In particular, the formation of thin films on silicon and glass substrates
It relates to what is suitable for. [0002] 2. Description of the Related Art Conventionally, an object to be treated is provided with a shower head.
Plasma processing equipment that can uniformly process
And Japanese Patent Application Laid-Open No. H11-106960.
It has been known. This uses gas in a vacuum vessel.
A plasma chamber in which plasma is generated by the excitation source;
The above gas is pulsed into the vacuum vessel by a driving device.
Pulse gas valve to supply and pulse gas valve
Has multiple holes for introducing the supplied gas into the plasma chamber
And the sample is placed in the vacuum vessel.
Between the processing chamber and the plasma chamber.
Partition plate having holes communicating from the plasma chamber to the processing chamber
And a vacuum exhaust unit (not shown) for exhausting the processing chamber.
It is composed. [0003] As a result, a uniform plastic
Gum is formed, and large-diameter workpieces can be processed more uniformly.
At the same time as reducing the amount of dust
Control of processing speed and processing shape
Become like [0004] However, as described above,
Further, the prior art has the following problems. (1) An RF coil is mounted on the outer periphery of the side wall constituting the plasma chamber.
When installed, plasma is generated in the plasma chamber,
Through the shower head because the plasma density in the
To supply gas uniformly to the plasma chamber
The density of the gas excited at the center of the
The substrate is supplied to the substrate through the partition plate
Also, the density distribution of the active species
I will. As a result, the density distribution of active species on the substrate
Cannot be achieved, and the processing of the substrate to be processed becomes non-uniform. (2) A coil is provided on the outer periphery of the cylindrical plasma chamber side wall.
To ensure plasma processing uniformity.
The end of the coil in the middle of the side wall
Is not possible, and coils must be provided in units of circumference.
It cannot be cut at a sharp length. An object of the present invention is to solve the above-mentioned problems of the prior art.
And eliminate the problem of the substrate to be processed due to the lifetime of the active species.
Plasma processing equipment that can improve uniformity
To provide. [0007] According to the present invention, a plasma is generated.
The plasma chamber to be formed and the processing chamber
Processing chamber formed in a part, and a plasma chamber of the processing chamber
A window formed in a convex or concave shape on the side of the plasma chamber;
Having an induction coil provided therein, and electromagnetic induction of the induction coil
To excite the gas supplied to the plasma chamber by plasma
An inductively coupled plasma source for generating active species,
The active species generated in the plasma chamber are supplied into the processing chamber.
To process the substrate to be processed. [0008] The induction coil provided in the window of the plasma chamber has a high circumference.
After applying wave power, gas is introduced into the plasma chamber.
You. When gas is introduced into the plasma chamber, this gas is
Activated by magnetic induction, plasma chamber along the window
An annular plasma is generated on the inner circumference of. This annular plasm
Exciting the gas with a gas produces active species. Activity generated
Species are treated in the processing chamber by the flow and diffusion of the supply gas.
Reach the substrate. Generate an annular plasma in the plasma chamber
So that compared to the case where plasma is generated uniformly,
In all, the density of active species around the substrate, which tends to decrease in density,
The degree can be improved. Therefore, plasma
To the substrate to be processed.
Process characteristics from the plasma
Even when the distance to the substrate is short, uniform activity is
The density distribution of the sex can be obtained. As a result,
Without increasing the size of the vessel and reducing the plasma density
Uniform processing within the substrate surface without attenuation
Becomes possible. Further, in the above invention, the window may be
Protrudes at the upper center of the plasma chamber toward the plasma chamber side
However, the outside of the plasma chamber is formed into a cylindrical shape having a concave portion.
The plasma is formed in the concave portion of the cylindrical window outside the plasma chamber.
The induction coil for introducing high-frequency power into the room
The outer periphery of a cylindrical window that protrudes in the plasma chamber.
An annular plasma may be generated along. The window provided in the plasma chamber is located above the plasma chamber.
Plasma is simple with a simple configuration that is formed in the center of the
An annular plasma can be generated on the inner periphery of the chamber,
To easily obtain a uniform active species density distribution in the substrate surface
Can be. The tubular shape may be a square tubular shape, but an annular
In order to produce a mask, a cylindrical shape is preferable. Further, in the above invention, the window is provided
It protrudes into the upper part of the plasma chamber to the plasma chamber side
And a recess outside the plasma chamber.
Along the recess of the annular window,
The induction coil that introduces high-frequency power toward the
An annular step along the inner circumference of the plasma chamber of the annular window.
A plasma may be generated. Along the inside of the annular window protruding into the plasma chamber,
To produce a ring-shaped plasma, the process vessel becomes larger.
Uniformity of the density of active species generated by plasma without
Can achieve uniform processing within the surface of the substrate to be processed.
Become. In the above invention, the window is provided
It protrudes from the upper part of the plasma chamber to the outside of the plasma chamber
And a recess on the inside of the plasma chamber.
It is composed of an annular window that protrudes out of the plasma chamber.
High frequency along the outer periphery of the annular window toward the plasma chamber
The induction coil for introducing electric power is provided in an annular shape, and
Along the annular recess of the annular window that protrudes out of the
Plasma may be generated. As described above, the protruding portion extends into the plasma chamber.
When an annular plasma is generated along the inside of the annular window,
Because the shape of the annular plasma formed is unclear,
In the position close to the matrix, the density of the active species generated by the plasma
The distribution shows a basin shape with relatively shallow depth,
As it moves away, it quickly becomes convex and there is no uniform position.
However, in the annular recess of the annular window protruding outside the plasma chamber
When an annular plasma is generated along the
Separation results in uniform density of active species generated by plasma
There is a position. Therefore, the density of the active species becomes uniform.
If the substrate is placed in the
In addition, more uniform processing within the surface of the substrate to be processed can be performed. In the above invention, a plasma chamber is provided.
It is good to comprise a dome made of an electric body. Dielectric plasma chamber
When it is composed of a dome made of
Even if the thickness is reduced, the strength is increased, the production cost is reduced,
The number can be reduced. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma processing apparatus according to the present invention will be described below.
Will be described. First, the principle of the present invention will be described. Book
The invention relates to a plasma on a surface of a wafer to be processed.
Generated to homogenize the density of active species generated in
That it is necessary to make the plasma to be annular
It was made. FIG. 7 shows that the shape of the generated plasma is
As we move away from the plasma towards the wafer,
The density distribution of active species generated by plasma changes
It shows how it goes. The shape of the plasma generated in the plasma chamber
Means that each (A) is uniformly formed in a disk shape in the plasma chamber
(B) is generated in the center of the plasma chamber.
The point plasma that is formed, and (C) is inside the plasma chamber
This is an annular plasma generated around the circumference. Distance from plasma
The separation is h₁~ H_FourThere is. here
Is 200 mm in diameter, and the wafer is
The inside diameter of each processing chamber to be accommodated is constant. Generates active species by plasma excitation in a plasma chamber
Once formed, it diffuses into the processing chamber,
The density of the active species changes according to the distance. did
Therefore, the position of the wafer placed in the processing chamber from the plasma
Depending on the position, the processing state changes. The size (inner diameter) of the processing chamber is limited.
And the distance from the plasma to the wafer is h₁→ h_FourLarge
As the density of the active species decreases,
The diffusion of the active species proceeds sufficiently. With this, active species
Since the density distribution is uniform, it depends on the shape of the generated plasma.
There is no difference in the processing state. [0021] Density distribution of active species generated by plasma
Is the distance h from the plasma₁→ h_FourAccording to
It changes to. In FIG. 7A of the uniform plasma, the periphery of the substrate is shown.
The active species density is reduced only at the edges, and the rest is uniform
(H₁). The overall plasma processing effect is large
However, the effect of plasma treatment on the periphery including the wafer edge
Rate is falling. This is due to the exhaust of the processing chamber.
Active species are deactivated on the inner wall of the chamber and the periphery of the wafer
As the gas particle density decreases,
This is because the density of the active species to be treated decreases. And
As the distance from the plasma increases, the center of the substrate
Part, leaving the active species density at the edge of the substrate
And gradually declines (h_Two), Active species in the center of the substrate
Density also decreases, the difference between the central part and the peripheral part decreases
(H_Three), The active species density at the center of the substrate is further reduced
And there is almost no difference in active species density between the center and the periphery
The active species density distribution has a slightly convex shape on the plasma chamber side.
(H_Four). In FIG. 7B of the point plasma, the inside of the substrate is shown.
Extremely high active species density in the central part, going to the periphery of the substrate
Sharply (h₁), The central part of the substrate
The density of sexual species decreases, and accordingly,
The direction of curvature where the active species density distribution falls
The sex density distribution becomes uniformly convex, but the central part and the periphery
The difference from the part is still large (h_Two), In the center of the board
The active species density is further reduced, and the
Differences decrease somewhat, active species density distribution increases overall
(H_Three), The difference in the active species density between the central part and the peripheral part is almost
It becomes slightly convex toward the plasma chamber side
(H_Four). In FIG. 7C of the annular plasma,
The highest density of active species is located slightly inside the periphery of the plate
And the density of active species decreases toward the center of the substrate.
Lower the center (h₁), Slightly inside the periphery of the substrate
The density of active species in the side part decreases, and the difference from the central part decreases
(H_Two), The peak at the inner part of the periphery decreases,
The overall shape is slightly concave on the plasma chamber side,
Almost uniform (h_Three), Active species density distribution song
The direction of the rate is reversed and becomes slightly convex toward the plasma chamber
(H_Four). Usually, the wafer is limited by the size of the apparatus and
Considering the processing efficiency, the distance h_TwoOr h_ThreePut near
You. In these areas, plasms where the density of active species becomes uniform
The square shape is the annular type of (C). In short, way
In order to treat c uniformly, plasma is generated in an annular shape.
Need to be Here, the plasma source is an inductively coupled plasma.
When configured with a source, the plasma strikes the current flowing through the coil.
Generated to erase. Therefore, as shown in FIG.
In addition, a cylindrical window 2 protruding into the plasma chamber 1 is provided.
The induction coil 3 is mounted in the cylinder,
Generates plasma 4 by introducing high frequency power
I do. Then, it is generated around the plasma chamber around the outer periphery of the cylindrical window 2.
The generated plasma 4 has an annular shape. Next, various window shapes will be described with reference to FIGS.
The following specifically describes the substrate processing apparatus. Figure 1 shows the first real
FIG. 2 shows a cylindrical window according to the second embodiment.
Window, FIG. 3 is a convex annular window of the third embodiment, and FIG.
A single-wafer plasma processing apparatus having a dome-shaped lid according to the embodiment.
1 shows schematic cross-sectional views of a processing device. The plasma source is I
CP (Inductively Coupled Plasma) source
The electromagnetic induction of a high-frequency coil installed outside the chamber
Plasma is generated inside the plasma chamber. A first embodiment having the cylindrical window 26 of FIG.
Plasma processing apparatus processes a single wafer W.
The processing container 11 is provided. The processing container 11 is made of metal, for example,
It is made of stainless steel or aluminum alloy. The processing vessel 11 has an opening at the top and a cuff inside.
Main body 13 in which processing chamber 12 for forming a film of wafer W is formed
And closes the opening of the main body 13 and separates from the processing chamber 12.
Next, a plasma chamber 14 for generating plasma is formed therein.
Dome-shaped lid 15
Razuma shape. The plasma chamber 14 in the lid 15 and the body 13
At the boundary with the processing chamber 12 from the plasma chamber 14
2 to supply gas containing active species activated by plasma
A gas supply head 16 is provided. Gas supply head 16
Are, in order from the top, a gas that disperses the gas in the plasma chamber 14.
A gas distribution plate 18 having a number of distribution holes 17;
Buffer room 19 for temporary storage of water, numerous shower holes
Injects gas from buffer chamber 19 to processing chamber 12
The gas shower plate 21 is formed. The processing chamber 12 in the main body 13 has a single wafer.
A susceptor 22 for supporting the wafer W is provided. Susceptor
22 has a temperature adjusting mechanism having a cooling / heating function
(Not shown) is buried and adjusts the temperature of the wafer W during processing.
Adjustable. The processing vessel 11 is airtightly constructed,
13, the processing chamber 12 and the plastic
The vacuum chamber 14 is evacuated. Also made of metal
The dome-shaped ceiling of the lid 15 is directly
Razma contacts and damages, suppresses metal release
For this purpose, it is covered with a dielectric cover 24. Dielectric power
The bar 24 is made of, for example, Al_TwoO_Three(Alumina) and AlN (nitride)
Aluminum) and SiO_Two(Quartz). Upper part of lid 15 constituting plasma chamber 14
An opening 25 is provided at the center, and a window 26 is fitted into the opening 25.
You. The window 26 protrudes vertically inside the plasma chamber 14.
So as to have a recess 27 outside the plasma chamber 14.
It has a cylindrical shape. The cylindrical window 26 has a plasma-resistance-inducing property.
Electric material, for example, Pyrex (registered trademark), quartz glass
, Alumina, sapphire, etc. The plasma chamber 14 in the lid 15 contains the lid 1
5, a gas introduction pipe 28 is inserted from outside, and the cylindrical window 2 is inserted.
Gas is blown into the inside of the bottom room as indicated by the arrow to disperse.
Gas is introduced into the plasma chamber 14.
You. The concave portion 2 of the cylindrical window 26 outside the plasma chamber 14
7, high-frequency power is introduced toward the plasma chamber 14.
The induction coil 29 is mounted. Inductively coupled plasma source (I
The induction coil 29 constituting the CP source 30 includes a matching unit 31
Connected to the high-frequency power supply 32 via the
The gas supplied to the plasma chamber 14 is excited to generate a plasma chamber.
14 along the outer periphery of the cylindrical window 26 projecting in a convex shape inside the room.
Thus, an annular plasma 10 surrounding the cylindrical window 26 is generated.
To achieve. In the drawing, reference numeral 32 shown by a dotted line is a circle.
This is a cover for protecting the cylindrical window 26 from the outside. In the above-described configuration, a transfer device (not shown)
The wafer W is transferred from the transfer port (not shown) to the processing chamber
Carry in 12. Suscept heated by temperature control mechanism
And placed on the heater 22 to heat the wafer W to a predetermined temperature.
You. After heating, the gas is processed through the exhaust port 23 by an exhaust pump (not shown).
The processing chamber 12 and the plasma chamber 14 in the processing vessel 11 are evacuated.
Carefully set to a predetermined low pressure. Gas introduction into the plasma chamber 14
A constant flow rate of reactivity from its inlet via inlet pipe 28
Gas is blown out to the center of the plasma chamber 14. Blown gas
Is blocked by the gas dispersion plate 18 and the entire plasma chamber 14
Spread throughout the body. The pressure in the processing chamber 12 and the plasma chamber 14
After setting to a predetermined value by a pressure control mechanism not shown, the lid 1
The induction coil 29 attached to the cylindrical window 26 of FIG.
Apply force. The spread gas is excited by electromagnetic induction.
A ring is formed around the inner periphery of the plasma chamber 14 along the cylindrical window 26.
A plasma 10 is generated. This annular plasma 1
The gas (active species) activated by the gas dispersion plate 1
8 and is sent to the buffer chamber 19 through the dispersion holes 17. Sa
In addition, the active species is transferred from the buffer chamber 19 to the gas shower plate 21.
Through the shower hole 20, it is uniformly supplied to the processing chamber 12.
I'm done. The supplied active species reaches the wafer W and
After treating the surface, the air is exhausted from the exhaust port 23.
You. In the embodiment, the plasma chamber 14 has a cylindrical shape.
A window 26 is provided, and an annular plasma is formed in the plasma chamber 14.
Because it is generated, plasma is generated uniformly in a disk shape
The density of active species tends to decrease
The density distribution of active species around the wafer W
Can be. Processing uniformity between the center of the wafer and the periphery of the wafer
The main reason for improving the uniformity (in-plane uniformity of processing) is gas
Changing the distance B between the work plate 21 and the susceptor 22
Optimal susceptor for uniform processing in the wafer plane
Adjust the position to For example, plasm in the center of the wafer
If the processing efficiency is low, it means that the distance B is still narrow.
Therefore, the distance B is extended. That way, way
The uniformity is further improved because the active species around c diffuses to the center.
Will be improved. Thus, from the plasma 10 to the wafer W,
Density of active species in annular plasma 10 versus distance C at
Due to the distribution change characteristic (see FIG. 7C), the plasma 10
Even if the distance C from the wafer to the wafer W is short,
It is possible to obtain a uniform active species density distribution in the inside. That
As a result, the processing vessel 11 can be made larger (larger diameter, deeper).
In addition, uniform processing within the wafer surface becomes possible. An induction coil 29 is provided in the cylindrical window 26.
So that plasma processing can be performed evenly.
A coil must be provided on the outer circumference of the plasma chamber 14 in units of circumference.
It is not necessary to wind in circumference units compared to
The length of 29 can be selected at an appropriate length. But
Design of high frequency power to be injected into the plasma chamber
Becomes easier. In the above plasma processing apparatus, the tantalum oxide
Side (Ta_TwoO_Five) Post-treatment (removal of C), table of oxide film
Surface nitriding, epitaxial growth, dry etching, and
Applicable to cleaning of processing chambers, etc.
Compared to the conventional example that generated uniform plasma,
Processing efficiency can be improved and in-plane uniformity can be improved.
Wear. Here, the tantalum oxide (Ta)_Two
O_Five) Is a post-treatment (removal of C)
In the semiconductor manufacturing process after the
Tantalum oxide used as insulating film in capacitor
Exists near the film surface to reduce leakage current
This is a process for removing carbon (C). Removal conditions
Is Pressure 1-100Pa Substrate temperature 300-400 ° C And the reaction gas is oxygen (O_Two) Is common and plasma
Activated species of oxygen (O^*) Is a table of wafer W
Surface, and reacts with carbon on the surface of the tantalum oxide film.
This is removed accordingly. The activity of oxygen depends on the pressure.
Since the amount of generation and the life of the species change, the supply amount of oxygen gas and the pressure
Is appropriately set within the range of the capacity of the exhaust pump. Another example of remote plasma processing
Is nitriding of the oxide film surface. By the way, this remote
Examples of conditions for nitridation of the oxide film surface by plasma
It is as described. [0044] NH_ThreeFlow rate 300sccm Pressure 30Pa Substrate temperature 400 ℃ RF power 1000W Processing time 5 minutes SIMS (Secondary Ionization Mass Sp
ectrometer) to measure the concentration of nitrogen atoms
be able to. In the apparatus according to the embodiment of FIG.
The wafer is separated from the plasma by 90 mm (FIG. 1)
After performing the distance C) treatment, the concentration of nitrogen atoms becomes about 50%.
You. On the other hand, if it is treated 400 mm away, nitrogen atoms
The concentration decreases to less than 10%. Also, a uniform plasma
In the conventional example that generates
Distance between the plasma and the wafer required for
Although it was 0 mm or more, an annular plasma was generated.
In one embodiment, the density distribution of the active species is made uniform.
The distance between the plasma and the wafer required for
It can be close to 0mm, so the density of active species
Significantly reduce the effect of remote plasma processing
Can be improved. Also, as in the conventional example, at the center of the buffer chamber,
When a point-like plasma is formed, the substrate to be processed is, for example, φ2
In the case of a 00 mm silicon wafer,
There is a path difference of 100mm in the path to the con wafer
Processing at the edge with respect to the center of the silicon wafer.
The effect was much smaller. In contrast, this implementation
In the embodiment, the difference in the effect due to the route difference is almost eliminated. FIG. 2 shows a plasma processing according to the second embodiment.
1 shows a processing device. The first embodiment shown in FIG.
The difference from the Zuma treatment device is that the one in Fig. 1 has a dome-shaped lid.
While a cylindrical window 26 is provided in the body 15, FIG.
Is a plate-like lid 35 with an annular shape convex toward the plasma chamber 14 side.
The point is that a window 36 is provided. In the plasma chamber 14 in the lid 35, the lid 3
5 is provided with a gas inlet 38 in the upper center.
As shown by the arrow in the center of FIG.
ing. Specifically, a lid for forming the plasma chamber 14
The body 35 is not in a dome shape but in a flat plate shape. Flat plate
The shape is used to secure the strength. Flat of lid 35
The plate-shaped ceiling generates electromagnetic induction in the plasma chamber 14.
The cover is covered with a dielectric cover. This lid
An annular opening is provided in 35, and an annular window 36 is fitted into this opening.
Put in. An annular window 36 is provided above the plasma chamber 14.
14 so that it protrudes inward, and
A recess 37 is provided outside the zoom chamber 14. Recess of annular window 36
Along with 37, the high-frequency power is supplied to the plasma chamber 14.
The induction coil 29 to be introduced is mounted in a ring shape,
Along the inside of an annular window 36 projecting into
A zuma 10 is generated. In the figure, reference numeral 39 denotes an annular window 36 of the lid 35.
Lid support cover that supports the central part formed from above
It is. Reference numeral 32 indicated by a dotted line denotes an annular window 36.
Is a cover for protecting the outside from outside. The ring projecting into the plasma chamber 14 in this manner
Generates an annular plasma 10 along the inside of the window 36
In the same way as in the case of cylindrical windows, the density of active species can be made uniform.
It is. FIG. 3 shows a plasma processing according to the third embodiment.
1 shows a processing device. In the second embodiment shown in FIG.
An annular window 36 protruding toward the plasma chamber 14 is
However, in the third embodiment shown in FIG.
An annular window 46 having a concave shape on the side of the plasma chamber 14
Provided. Specifically, the window is constituted by an annular window 46,
The annular window 46 is located above the plasma chamber 14 and outside the plasma chamber 14.
Projecting to the side, and thus concave to the plasma chamber 14 side
The recess 47 is provided inside the plasma chamber 14.
Is formed. Along the outer circumference of the annular window 46
To induce high-frequency power into the plasma chamber 14
The conductive coil 29 is attached, and the concave portion 4 inside the annular window 46 is mounted.
7, an annular plasma 10 is generated. The annular plasma 10 extends along the concave portion 47.
Is generated, the density of the active species is increased at a distance from the plasma 10.
There is a position where the degree is uniform. Therefore, the density of the active species
When the wafer W is placed at a position where
More uniform in the wafer plane without increasing the size of 11
Processing can be performed. In the case of the above-described third embodiment,
Also has an annular shape forming a recess 47 which is a relatively narrow space.
The induction coil 29 should be mounted along the outer periphery of the window 46.
And a coil around the entire circumference of the plasma chamber as in the prior art device.
Need not be attached, and the apparatus can be simplified. FIG. 4 shows a plasma according to the fourth embodiment.
FIG. 4 shows a processing apparatus, which is a modification of the embodiment shown in FIG.
You. The difference from FIG. 1 is that the lid 15 and the dielectric cover
The plasma chamber 14 was composed of two members 24 and 24.
The lid itself is composed of a dielectric dome 45,
This is the point that the zuma chamber 14 is constituted by a single member. Lid directly
With the dome 45 made of dielectric, even if the wall surface is thinned
Increased strength, reduced production costs and reduced number of parts
Wear. Referring to the embodiment of the invention shown in FIGS.
Remote from the plasma within a specified distance from the plasma.
The effect of the heat plasma treatment is presumed as shown in FIG. FIG.
In FIG. 7, the point-like plasma raised for reference (FIG. 7)
In (B)), the plasma processing effect is indicated by a distribution curve 54.
As shown in the figure, the central part has the largest plasma processing effect,
Decreases sharply toward. Also overall plasma treatment
The effect is small. The first embodiment, the second embodiment, and
And the annular plasma of the fourth embodiment (FIG. 7C).
Are, as indicated by the distribution curve 52,
Smearing effect is slightly reduced, but the effect at the end is uniform
7 (A), which is not so small.
No. This protrudes into the plasma chamber 14 on the wafer W.
High-frequency power is supplied from the recesses 27 and 37 of the window
14 to produce an annular plasma 10
To improve the plasma processing efficiency around the wafer
Because it can be. With this device, the center of the wafer W
The processing uniformity of the peripheral part is mainly due to the gas shower plate 21
By changing the distance B (see FIG. 1) between the
Can be adjusted and improved. For example, when the wafer W
If the processing efficiency is low, if the distance B is increased,
The plasma around the wafer is also diffused to the center, improving uniformity.
You. The annular plasma according to the third embodiment (FIG. 7)
(C)) in comparison with the first, second, and fourth embodiments.
Therefore, as shown in the distribution curve 53, the effect of the peripheral portion is slightly large.
It becomes. The second embodiment having the concave annular window 36 shown in FIG.
Embodiment and a third embodiment having a convex annular window 46 of FIG.
There is a slight difference in the plasma processing effect between the two.
The reason for this difference will be described with reference to FIG. FIG.
FIG. 6A shows a case where a concave annular window 36 is provided, and FIG.
Shows the density distribution of active species when a window 46 is provided.
You. In FIG. 6 (A), the plasma 10 overlaps the inner circumference of the ring.
And the shape of the plasma ring is not clear,
Species density distribution increases the distance between plasma and wafer
It quickly becomes convex before it becomes
There are not many positions where the density distribution of active species becomes uniform.
No. On the other hand, in FIG.
There is no overlap and the shape of the plasma ring is clear
At a certain distance, the density of active species becomes uniform.
(C). Therefore, the uniformity of the plasma processing effect
The third embodiment has better performance than the second embodiment.
It becomes. [0061] According to the present invention, a projection or depression provided in a plasma chamber is provided.
High-frequency power from the window into the plasma chamber
Since an annular plasma was generated in the plasma chamber,
A coil is provided on the outer periphery of the plasma chamber as
Compared to those that generate plasma, active species
Uniform density distribution and uniform in-plane processing of substrate to be processed
Performance can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic sectional view of a plasma processing apparatus according to a first embodiment. FIG. 2 is a schematic sectional view of a plasma processing apparatus according to a second embodiment. FIG. 3 is a schematic sectional view of a plasma processing apparatus according to a third embodiment. FIG. 4 is a schematic sectional view of a plasma processing apparatus according to a fourth embodiment. FIG. 5 is an expected distribution characteristic diagram of a remote plasma processing effect comparing the embodiment and the conventional example. FIG. 6 is an explanatory diagram showing a difference in plasma distribution density between a concave annular window and a convex annular window according to the embodiment. FIG. 7 is a density distribution characteristic diagram of active species according to the distance of various plasma shapes. FIG. 8 is a diagram showing a window structure for generating annular plasma according to the embodiment. DESCRIPTION OF SYMBOLS 10 Annular plasma 11 Processing vessel 12 Processing chamber 14 Plasma chamber 26 Cylindrical window 29 Induction coil 30 Inductively coupled plasma source W Wafer (substrate to be processed)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05H 1/46 H01L 21/302 NF term (Reference) 4G075 AA24 BA06 BA10 BC05 BC06 DA02 EB44 FA05 4K030 KA30 5F004 AA01 AA09 AA15 BA03 BA20 BB13 BB32 BD04 5F045 AA08 AA20 AB33 AC12 AF08 BB02 DP03 EC01 EE06 EH11

Claims (1)

Claims: 1. A processing container having a plasma chamber for generating plasma and a processing chamber for processing a substrate to be processed formed therein, and a plasma chamber of the processing container, A window formed in a concave shape, and an inductively coupled plasma source having an induction coil provided in the window, and plasma-exciting a gas supplied to the plasma chamber by electromagnetic induction of the induction coil to generate active species. A plasma processing apparatus for processing the substrate to be processed by supplying active species generated in the plasma chamber into the processing chamber.