JP2003051618A - Chip-type semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized and high-luminance chip-type semiconductor light-emitting device for which the directivity of emitted light has less biased. SOLUTION: In the chip-type semiconductor light emitting device 10 composed by fixing a lower surface electrode 13b of a semiconductor light-emitting element 13 on a first terminal electrode 12a and connecting an upper surface electrode 13a via a wire 14 to a second terminal electrode 12b, which emits light from an upper surface light-emitting part 13d which is not covered with the upper surface electrode 13a, the contact point of the upper surface electrode 13a and the wire 14 is shifted to a side at a distance from the second terminal electrode 12b.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device used for a surface panel, a backlight of a liquid crystal display device, an indicator of a mobile device, a lighting switch, a light source of office equipment, etc. The present invention relates to a mountable chip type semiconductor light emitting device.

[0002]

2. Description of the Related Art In recent years, the demand for chip-type semiconductor light emitting devices that can be surface-mounted on a circuit board has been rapidly increasing with the trend toward smaller and thinner electronic devices. FIG. 2 is a vertical cross-sectional view schematically showing a configuration example of a conventional chip-type semiconductor light emitting device. Here, a 1608 size (1.6 × 0.8 m) is shown.
m) and 1005 size (1.0 × 0.5 mm), which are small-sized chip-type semiconductor light emitting devices 20.

A chip type semiconductor light emitting device 20 shown in FIG. 1A has a chip substrate 21 (long side A; <1.6 mm),
A pair of first, which is provided at both ends of the surface of the chip substrate 21,
The second terminal electrodes 22a, 22b and the semiconductor light emitting device 23 (one side B; 0.
2 to 0.3 mm). Semiconductor light emitting element 2
The lower surface electrode 23b of No. 3 is fixed to the first terminal electrode 22a so as to be conductive, and the upper surface electrode 23a is formed of the conductive wire 2a.
4 to the second terminal electrode 22b. The light generated at the PN junction portion 23c of the semiconductor light emitting element 23 is a top light emitting portion 23d (one side C; not covered by the top electrode 23a).
0.2 to 0.25 mm). Also,
Both the semiconductor light emitting element 23 and the wire 24 described above are sealed with a translucent resin sealing body 25.

The chip type semiconductor light emitting device 20 in which the long side A of the chip substrate 21 is shortened as the device size is reduced.
Then, when the semiconductor light emitting element 23 is disposed in the center of the device, the work area D (about 0.3
.About.0.4 mm) or the working area E (about 0.5 to 0.6 mm) necessary for wiring the wire 24 cannot be secured (see (b) in the figure). Therefore, in the small-sized chip-type semiconductor light emitting device 20 having the above configuration, the semiconductor light emitting element 23 is offset from the center of the device by the distance F (for example, 0.4 to 0.5 mm) in order to secure the work areas D and E. Are arranged.

[0005]

Certainly, the chip-type semiconductor light-emitting device 20 having the above-mentioned structure can be downsized without reducing the size of the semiconductor light-emitting element 23, so that the device is small in size. It is possible to provide a high-brightness product. However, in the chip-type semiconductor light emitting device 20 having the above configuration, the semiconductor light emitting element 23 is not disposed in the center of the device, and therefore the direction (semiconductor light emitting element 23
The emitted light in the offset direction) is stronger, and the directivity of the emitted light is biased.

In view of the above problems, it is an object of the present invention to provide a chip-type semiconductor light emitting device that is small in size, has high brightness, and has little deviation in directivity of emitted light.

[0007]

In order to achieve the above object, a chip type semiconductor light emitting device according to the present invention comprises a chip substrate and a pair of first and second first and second substrates provided on both ends of the surface of the chip substrate. A semiconductor light emitting device having electrodes formed on the upper surface and the lower surface thereof, the lower surface electrode of the semiconductor light emitting element is conductively fixed on the first terminal electrode, and the upper surface electrode is conductive. In a chip type semiconductor light emitting device which is connected to a second terminal electrode via a wire and emits light from a top light emitting portion not covered by the top electrode, a contact between the top electrode of the semiconductor light emitting element and the wire is formed. , Is provided so as to be offset from the second terminal electrode.

In the chip type semiconductor light emitting device having the above structure, the upper surface light emitting portion of the semiconductor light emitting element is
It is preferable to displace it on the side closer to the terminal electrode.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As a chip type semiconductor light emitting device according to the present invention, a mold type chip type semiconductor light emitting device will be described here as an example. FIG. 1 is a schematic view showing a configuration example of a chip-type semiconductor light emitting device according to the present invention, in which a vertical sectional view (a) and a top view (b) are shown. The chip-type semiconductor light emitting device 10 according to the present invention
Is 1608 size (1.6 x 0.8 mm) or 1005
The chip-type semiconductor light-emitting device has a small size such as a size (1.0 × 0.5 mm).

A chip type semiconductor light emitting device 10 shown in the figure.
Is an insulative chip substrate 11 having a rectangular shape in plan view (long side A; <1.6 mm), and wraps around both ends of the chip substrate 11 in the longitudinal direction (left and right direction of the paper) from the front surface side to the back surface side. The pair of first and second terminal electrodes 12a, 1 provided
2b, and a semiconductor light emitting element 13 (one side B; 0.2 to 0.3 mm) having electrodes formed on the upper surface and the lower surface, respectively.

When mounting the chip type semiconductor light emitting device 10 on a circuit board (not shown) such as a mother board, first, the first and second terminal electrodes 12a and 12b are brought into contact with the wiring pattern on the circuit board. As described above, the chip-type semiconductor light emitting device 10 is arranged on the circuit board. Then, the first,
After a conductive adhesive such as cream solder is applied to the second terminal electrodes 12a and 12b and the wiring pattern on the circuit board, heating in a reflow oven is performed. The conductive adhesive is melted by such heating, and the chip-type semiconductor light emitting device 10 is fixed to the circuit board while maintaining conductivity.

The material for forming the chip substrate 11 is not particularly limited as long as it is excellent in insulation and heat resistance, and phenol resin, diallyl phthalate resin, silicon resin, epoxy resin, polyimide, bismaleimide triazine resin. A thermosetting resin such as (BT resin) or a thermoplastic resin such as a fluororesin, polycarbonate, polysulfone, modified polyphenylene ether, polyphenylene sulfide or the like can be used. Of these, epoxy resin and BT resin containing glass fiber are preferable.

Further, the first and second terminal electrodes 12a, 12b
The forming material is not particularly limited as long as it has conductivity, and a conventionally known conductive material can be used. Among them, metal materials such as gold and copper, which have excellent conductivity and workability, are preferable.

Lower surface electrode 1 of the semiconductor light emitting device 13 described above.
3b is fixed to the first terminal electrode 12a so as to be conductive, and the upper surface electrode 13a is connected to the second terminal via the conductive wire 14.
It is connected to the terminal electrode 12b. In addition, the light generated at the PN junction portion 13 c of the semiconductor light emitting device 13 is emitted from the top electrode 13
13a of upper surface light-emitting parts not covered by a (one side C; 0.2-
0.25 mm) is emitted to the outside. The semiconductor light emitting device 13 that can be used in the present invention is not particularly limited, and conventionally known semiconductor light emitting devices (for example, Si-based and GaAs) are available.
System, GaAlAs system, InP system, AlInGaP system, Z
A light emitting diode such as an nSe system) can be used.

Further, the semiconductor light emitting element 13 and the wire 14 are sealed by a light-transmitting resin sealing body 15 which is molded for the purpose of blocking the external environment and the like. As the material for forming the resin encapsulant 15, epoxy resin, unsaturated polyester resin, silicone resin, urea,
Melamine resin or the like can be used. Above all, an epoxy resin having excellent translucency is preferable. The shape of the resin encapsulant 15 may be appropriately determined according to the equipment or parts on which the chip semiconductor light emitting device 10 is mounted.

Here, in the chip-type semiconductor light emitting device 10 of the present embodiment, the contact point between the upper surface electrode 13a of the semiconductor light emitting element 13 and the wire 14 is provided deviated to the side far from the second terminal electrode 12b. There is. In addition, the “second terminal electrode 12
"A side far from b" means "a region located on the side far from the second terminal electrode 12b in the two regions divided by the center line (two-dot chain line) of the semiconductor light emitting element 13."

In this way, straddling the top emission part 13d,
If one end of the wire 14 is connected to the upper end portion of the semiconductor light emitting element 13, a part of the work area E required for wiring the wire 14 will be covered by the upper space of the semiconductor light emitting element 13. The offset amount F of the semiconductor light emitting element 13 can be suppressed to the minimum, and the semiconductor light emitting element 13 can be arranged almost in the center of the device. Therefore, the deviation of the directivity of the emitted light in the chip-type semiconductor light emitting device 10 having a small size such as 1608 size or 1005 size can be significantly reduced as compared with the conventional case.

Further, in the chip-type semiconductor light emitting device 10 of this embodiment, the top light emitting portion 13d of the semiconductor light emitting element 13 is used.
Are provided so as to be displaced toward the side closer to the second terminal electrode 12b. Here, “the side close to the second terminal electrode 12b” means
It means "a region located on the side closer to the second terminal electrode 12b in the two regions divided by the center line (two-dot chain line) of the semiconductor light emitting device 13".

With such a structure, even if the offset amount F of the semiconductor light emitting element 13 remains, the offset amount F and the deviation amount of the top surface light emitting portion 13d are made to coincide with each other, whereby the top surface light emitting portion 13d. Can be located in the center of the device. Therefore, it is possible to completely eliminate the bias in the directivity of the emitted light in the chip-type semiconductor light emitting device 10 having a small size such as 1608 size or 1005 size.

In the chip-type semiconductor light emitting device 10 of this embodiment, the case where the upper surface electrode 13a is formed so as to cover the peripheral edge portion of the upper surface of the semiconductor light emitting element 13 has been described as an example. The configuration of the invention is not limited to this, and the upper surface electrode 13a may be formed only on the side far from the second terminal electrode 12b, or may be formed in a spot. However, if the upper surface electrode 13a covers the peripheral portion of the upper surface of the semiconductor light emitting element 13 as in the present embodiment, the current flows on average over the entire PN junction 13c in the semiconductor light emitting element 12. The brightness of the light emitting element 13 can be increased. Therefore, in order to increase the brightness of the chip-type semiconductor light emitting device 10, it is desirable to adopt the configuration of this embodiment.

Further, in the chip type semiconductor light emitting device 10 of the present embodiment, the mold type chip type semiconductor light emitting device has been described as an example, but the application target of the present invention is not limited to this. It goes without saying that the present invention is also applicable to a casting type chip type semiconductor light emitting device and the like.

[0022]

As described above, in the chip type semiconductor light emitting device according to the present invention, the chip substrate, the pair of first and second terminal electrodes provided on both ends of the surface of the chip substrate, and the upper and lower surfaces. A semiconductor light emitting element having electrodes formed on the first terminal electrode, the lower surface electrode of the semiconductor light emitting element being conductively fixed to the first terminal electrode, and the upper surface electrode of the semiconductor light emitting element having a second surface through a conductive wire. It is connected to the terminal electrode,
In a chip-type semiconductor light emitting device that emits light from a top light emitting portion that is not covered by the top electrode, a contact point between the top electrode of the semiconductor light emitting element and the wire is provided deviated to a side far from a second terminal electrode. It is configured.

With this structure, a part of the work area required for wiring the wires is covered by the upper space of the semiconductor light emitting device, so that the offset amount of the semiconductor light emitting device can be minimized. It becomes possible to arrange the semiconductor light emitting element substantially at the center of the device. Therefore, 1608
The deviation of the directivity of the emitted light in the chip-type semiconductor light emitting device having a small size such as the size or 1005 size can be significantly reduced as compared with the conventional one.

In the chip type semiconductor light emitting device having the above structure, the upper surface light emitting portion of the semiconductor light emitting element is
It is preferable to displace it on the side closer to the terminal electrode. With such a configuration, even if the offset amount of the semiconductor light emitting element remains, the offset amount and the deviation amount of the top surface light emitting part are made to coincide with each other, so that the top surface light emitting part is positioned in the center of the device. Is possible. Therefore, it is possible to completely eliminate the bias in the directivity of the emitted light in the chip-type semiconductor light emitting device having a small size such as 1608 size or 1005 size.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration example of a chip type semiconductor light emitting device according to the present invention.

FIG. 2 is a vertical cross-sectional view schematically showing a configuration example of a conventional chip-type semiconductor light emitting device.

[Explanation of symbols]

10 Chip type semiconductor light emitting device 11 chip substrate 12a First terminal electrode 12b Second terminal electrode 13 Semiconductor light emitting device 13a upper surface electrode 13b lower surface electrode 13c PN junction 13d Top light emitting part 14 wires 15 Resin encapsulant

Claims (2)

[Claims] 1. A chip substrate, a pair of first and second terminal electrodes provided on both ends of the surface of the chip substrate, and a semiconductor light emitting device having electrodes formed on the upper and lower surfaces, respectively. The lower surface electrode of the semiconductor light emitting element is fixed to the first terminal electrode in a conductive manner, and the upper surface electrode is connected to the second terminal electrode through a conductive wire, and the upper surface light emission is not covered by the upper surface electrode. In a chip-type semiconductor light-emitting device that emits light from a portion, a contact point between the upper surface electrode of the semiconductor light-emitting element and the wire is provided so as to be displaced to the side far from the second terminal electrode. Light emitting device. 2. A semiconductor device comprising a semiconductor light emitting device, wherein
The chip-type semiconductor light-emitting device according to claim 1, wherein the chip-type semiconductor light-emitting device is provided so as to be deviated to a side closer to the terminal electrode.