JP2003046864A5 - - Google Patents
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- JP2003046864A5 JP2003046864A5 JP2001233697A JP2001233697A JP2003046864A5 JP 2003046864 A5 JP2003046864 A5 JP 2003046864A5 JP 2001233697 A JP2001233697 A JP 2001233697A JP 2001233697 A JP2001233697 A JP 2001233697A JP 2003046864 A5 JP2003046864 A5 JP 2003046864A5
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【０００５】
【課題を解決するための手段】
前記の目的を達成するため、本発明に係る固体撮像装置の駆動方法は、光電変換素子と、光電変換素子で光電変換された電荷信号を蓄積するフローティングディフュージョン（ＦＤ）部と、光電変換素子で光電変換された電荷信号をＦＤ部に転送する読み出しトランジスタと、ＦＤ部の電位を検出する画素アンプと、ＦＤ部の電位を所定の電位に初期化するリセットトランジスタとを有する光電変換セルが行列状に複数配置され、全ての光電変換セルに共通する所定の電位を供給する電源供給部を有する固体撮像装置を駆動する方法であって、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内に、リセットトランジスタをオンして、ＦＤ部の電位を所定の電位に初期化させた後に、リセットトランジスタをオフし、その後、読み出しトランジスタを介して光電変換素子で光電変換された電荷信号をＦＤ部に転送し、電源供給部の電圧が「Ｌｏｗ」レベルの状態で、リセットトランジスタを「Ｈｉｇｈ」にした後に、リセットトランジスタを「Ｌｏｗ」にし、光電変換セルを非選択状態に戻すことを特徴とする。
[0005]
[Means for Solving the Problems]
To achieve the above object, a driving method of engaging Ru solid-state image sensor of the present invention includes a photoelectric conversion element, a floating diffusion (FD) unit for accumulating charge signals photoelectrically converted by the photoelectric conversion element , photoelectric having a readout transistor for transferring charge signals that have been photoelectrically converted by the photoelectric conversion element to the FD section, and a pixel amplifier for detecting a potential of the FD section, and a reset transistor for initializing the electric potential of the FD portion to a predetermined potential conversion cells are more arranged in a matrix, a method of driving the solid-state imaging device having a power supply unit for supplying a predetermined potential common to all the photoelectric conversion cells, the voltage of the power supply unit is "High" level within a period of, by turning on the reset transistor, the potential of the FD portion after being initialized to a predetermined potential, to turn off the reset transistor, then, read Trang A charge signal converted photoelectrically transferred to the FD portion by the photoelectric conversion element through the static, in the voltage of the power supply unit is "Low" level state, after the reset transistor to "High", "Low Reset transistor To return the photoelectric conversion cell to the non-selected state.
本発明に係る固体撮像装置の駆動方法においては、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内おいて、リセットトランジスタがオン状態でのＦＤ部の電位をリセットレベルとして画素アンプで検出し、リセットトランジスタがオフ状態でかつ読み出しトランジスタがオン状態でのＦＤ部の電位を蓄積信号レベルとして画素アンプで検出し、リセットレベルと蓄積信号レベルの差を検出することを特徴とする。 In the method of driving engagement Ru solid-state image sensor of the present invention, the detection by the pixel amplifier period within Oite the voltage of the power supply unit is "High" level, the potential of the FD portion of the reset transistor is in the ON state as the reset level and, the reset transistor is detected by the pixel amplifier the potential of the FD portion in and read transistor in an off state is turned on as the accumulation signal level, characterized by the Turkey detecting the difference between the reset level and the accumulation signal level.
本発明に係る固体撮像装置の駆動方法においては、固体撮像装置は、画素アンプの出力信号線を一定に設定するためのロードトランジスタをさらに有し、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、ロードトランジスタとリセットトランジスタをオンして、次にロードトランジスタとリセットトランジスタをオフして、ＦＤ部の電位を信号のない基準レベルとして画素アンプで検出する工程と、ロードトランジスタと読み出しトランジスタをオンして、次にロードトランジスタと読み出しトランジスタをオフして、ＦＤ部の電位を蓄積信号レベルとして画素アンプで検出する工程とを含むことを特徴とする。 In the method of driving engagement Ru solid-state image sensor of the present invention, the solid-state imaging device, and further have a load transistor for setting a constant output signal line of the pixel amplifier, the voltage of the power supply unit is "High" level Oite within the period, it turns on the load transistor and the reset transistor, and then turning off the load transistor and the reset transistor, and detecting the pixel amplifier the potential of the FD portion as a signal-free reference level, the load transistor And turning on the read transistor , and then turning off the load transistor and the read transistor , and detecting the potential of the FD section as the accumulation signal level by the pixel amplifier.
本発明に係る固体撮像装置の駆動方法においては、固体撮像装置は、画素アンプの出力信号線を一定に設定するためのロードトランジスタをさらに有し、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、ロードトランジスタとリセットトランジスタをオンして、先にリセットトランジスタをオフした後にロードトランジスタをオフして、ＦＤ部の電位を信号のない基準レベルとして画素アンプで検出し、次に、ロードトランジスタと読み出しトランジスタをオンして、次に読み出しトランジスタをオフした後にロードトランジスタをオフして、ＦＤ部の電位を蓄積信号レベルとして画素アンプで検出することを特徴とする。 In the method of driving engagement Ru solid-state image sensor of the present invention, the solid-state imaging device, and further have a load transistor for setting a constant output signal line of the pixel amplifier, the voltage of the power supply unit is "High" level and on fraud and mitigating risk load transistor and the reset transistor within a period of, off the load transistor after turning off the reset transistor previously detected by the pixel amplifier the potential of the FD portion as a signal-free reference level, next Then, the load transistor and the read transistor are turned on, and then the read transistor is turned off, and then the load transistor is turned off, and the potential of the FD portion is detected by the pixel amplifier as the accumulation signal level.
本発明に係る固体撮像装置の駆動方法においては、固体撮像装置は、画素アンプの出力信号線を一定に設定するためのロードトランジスタをさらに有し、ロードトランジスタに所定の一定電圧を印加してロードトランジスタをオン状態に固定し、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、リセットトランジスタをオンして、ＦＤ部の電位をリセットレベルとして前記画素アンプで検出し、リセットトランジスタをオフし、次に読み出しトランジスタをオンして、ＦＤ部の電位を蓄積信号レベルとして画素アンプで検出し、読み出しトランジスタをオフすることを特徴とする。 In the method of driving engagement Ru solid-state image sensor of the present invention, the solid-state imaging device, and further have a load transistor for setting a constant output signal line of the pixel amplifier, by applying a predetermined constant voltage to the load transistor Te to secure the load transistor in the on state, Oite voltage of the power supply unit is within a period of "High" level, to turn on the reset transistor is detected by the pixel amplifier the potential of the FD section as a reset level, the reset The transistor is turned off, and then the read out transistor is turned on. The potential of the FD portion is detected by the pixel amplifier as the accumulation signal level, and the read out transistor is turned off.
本発明に係る固体撮像装置の駆動方法においては、固体撮像装置は、画素アンプの出力信号線を一定に設定するためのロードトランジスタをさらに有し、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、ロードトランジスタをオフ状態にしたままリセットトランジスタをオン／オフし、次に読み出しトランジスタをオン／オフして光電変換素子をリセット状態にし、電源供給部の電圧を「Ｈｉｇｈ」レベルから「Ｌｏｗ」レベルにして、ロードトランジスタをオフ状態にしたままリセットトランジスタをオン／オフし、光電変換セルを非選択状態にすることを特徴とする。 In the method of driving engagement Ru solid-state image sensor of the present invention, the solid-state imaging device, and further have a load transistor for setting a constant output signal line of the pixel amplifier, the voltage of the power supply unit is "High" level Oite the period of time, on / off reset transistor while the load transistor in the oFF state, the photoelectric conversion element to a reset state and then on / off read transistor, the voltage of the power supply unit "High" and from the level to the "Low" level, the reset transistor on / off while the load transistor in the oFF state, characterized in that the photoelectric conversion cell to a non-selected state.
この構成によれば、画素アンプは電位検出することなく、光電変換素子のみリセット状態にすることができ、電子シャッター機能を実現することができる。
また、前記の目的を達成するため、本発明に係る固体撮像装置は、光電変換素子と、光電変換素子で光電変換された電荷信号を蓄積するフローティングディフュージョン（ＦＤ）部と、光電変換素子で光電変換された電荷信号をＦＤ部に転送する読み出しトランジスタと、ＦＤ部の電位を検出する画素アンプと、ＦＤ部の電位を所定の電位に初期化するリセットトランジスタとを有する光電変換セルが行列状に複数配置された固体撮像装置であって、全ての光電変換セルに共通する所定の電位を供給する電源供給部を有し、電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内に、リセットトランジスタをオンして、ＦＤ部の電位を所定の電位に初期化させた後に、リセットトランジスタをオフし、電源供給部の電圧が「Ｌｏｗ」レベルの状態で、リセットトランジスタを「Ｈｉｇｈ」にした後に、リセットトランジスタを「Ｌｏｗ」にし、光電変換セルを非選択状態に戻すことを特徴とする。
According to this configuration, only the photoelectric conversion element can be reset and the electronic shutter function can be realized without detecting the potential of the pixel amplifier.
Further, in order to achieve the above object, a solid-state imaging device according to the present invention includes a photoelectric conversion element, a floating diffusion (FD) portion storing charge signals photoelectrically converted by the photoelectric conversion element, and photoelectric conversion elements. A photoelectric conversion cell having a readout transistor that transfers the converted charge signal to the FD unit, a pixel amplifier that detects the potential of the FD unit, and a reset transistor that initializes the potential of the FD unit to a predetermined potential A plurality of solid-state imaging devices are provided, including a power supply unit that supplies a predetermined potential common to all photoelectric conversion cells, and a reset transistor is provided within a period when the voltage of the power supply unit is at the “High” level. After turning on and initializing the potential of the FD section to a predetermined potential, the reset transistor is turned off, and the voltage of the power supply section is at the "Low" level. The reset transistor after the "High", and the reset transistor to "Low", and returning the photoelectric conversion cell to a non-selected state.
Claims (7)
前記電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内に、前記リセットトランジスタをオンして、前記ＦＤ部の電位を前記所定の電位に初期化させた後に、前記リセットトランジスタをオフし、その後、前記読み出しトランジスタを介して前記光電変換素子で光電変換された電荷信号を前記ＦＤ部に転送し、
前記電源供給部の電圧が「Ｌｏｗ」レベルの状態で、前記リセットトランジスタを「Ｈｉｇｈ」にした後に、前記リセットトランジスタを「Ｌｏｗ」にし、前記光電変換セルを非選択状態に戻すことを特徴とする固体撮像装置の駆動方法。 Reading of transferring the photoelectric conversion element, a floating diffusion (FD) unit for accumulating charge signals photoelectrically converted by the previous SL photoelectric conversion element, a charge signals photoelectrically converted by the photoelectric conversion element to the FD portion transistor and a pixel amplifier for detecting a potential of the FD portion, the photoelectric conversion cell and a reset transistor for initializing the potential before Symbol FD section to a predetermined potential is more arranged in a matrix, all the photoelectric conversion cells A method for driving a solid-state imaging device having a power supply unit for supplying the predetermined potential common to the
Before SL voltage of the power supply unit is within a period of "High" level, to turn on the reset transistor, the potential of the FD portion after being initialized to the predetermined potential, to turn off the reset transistor, Thereafter, the charge signal photoelectrically converted by the photoelectric conversion element through the read out transistor is transferred to the FD section;
After setting the reset transistor to "high" while the voltage of the power supply unit is at "low" level , the reset transistor is set to "low", and the photoelectric conversion cell is returned to the non-selected state. Method of driving a solid-state imaging device.
前記リセットトランジスタがオン状態での前記ＦＤ部の電位をリセットレベルとして前記画素アンプで検出し、
前記リセットトランジスタがオフ状態でかつ前記読み出しトランジスタがオン状態での前記ＦＤ部の電位を蓄積信号レベルとして前記画素アンプで検出し、
前記リセットレベルと前記蓄積信号レベルの差を検出することを特徴とする請求項１記載の固体撮像装置の駆動方法。 Oite before SL voltage of the power supply unit is within a period of "High" level,
The potential of the FD section when the reset transistor is on is detected by the pixel amplifier as a reset level,
The potential of the FD section when the reset transistor is off and the read transistor is on is detected by the pixel amplifier as a storage signal level,
The driving method of the solid-state imaging device according to claim 1, wherein the benzalkonium detecting the difference between the reset level and the accumulation signal level.
前記電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、
前記ロードトランジスタと前記リセットトランジスタをオンして、次に前記ロードトランジスタと前記リセットトランジスタをオフして、前記ＦＤ部の電位を信号のない基準レベルとして前記画素アンプで検出する工程と、
前記ロードトランジスタと前記読み出しトランジスタをオンして、次に前記ロードトランジスタと前記読み出しトランジスタをオフして、前記ＦＤ部の電位を蓄積信号レベルとして前記画素アンプで検出する工程とを含むことを特徴とする請求項１記載の固体撮像装置の駆動方法。 The solid-state imaging device may further have a load transistor for setting the output signal line of the pixel amplifier to be constant,
Oite within the period the voltage is "High" level of the power supply unit,
Turning on the load transistor and the reset transistor , then turning off the load transistor and the reset transistor , and detecting the potential of the FD section as a reference level without a signal by the pixel amplifier;
And turn on the read transistor and the load transistor, and then turning off the read transistor and the load transistor, and characterized in that it comprises the step of detecting by the pixel amplifier a potential of the FD portion as a storage signal level A driving method of a solid-state imaging device according to claim 1 .
前記電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、
前記ロードトランジスタと前記リセットトランジスタをオンして、先に前記リセットトランジスタをオフした後に前記ロードトランジスタをオフして、前記ＦＤ部の電位を信号のない基準レベルとして前記画素アンプで検出し、
次に、前記ロードトランジスタと前記読み出しトランジスタをオンして、次に前記読み出しトランジスタをオフした後に前記ロードトランジスタをオフして、前記ＦＤ部の電位を蓄積信号レベルとして前記画素アンプで検出することを特徴とする請求項１記載の固体撮像装置の駆動方法。 The solid-state imaging device may further have a load transistor for setting the output signal line of the pixel amplifier to be constant,
Oite before SL voltage of the power supply unit is within a period of "High" level,
The load transistor and the reset transistor are turned on, the reset transistor is turned off first, and then the load transistor is turned off, and the potential of the FD section is detected by the pixel amplifier as a reference level without signal.
Next, the load transistor and the read transistor are turned on, and then the read transistor is turned off, and then the load transistor is turned off, and the potential of the FD section is detected by the pixel amplifier as an accumulation signal level. The method for driving a solid-state imaging device according to claim 1, wherein
前記ロードトランジスタに所定の一定電圧を印加して前記ロードトランジスタをオン状態に固定し、
前記電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、
前記リセットトランジスタをオンして、前記ＦＤ部の電位をリセットレベルとして前記画素アンプで検出し、
前記リセットトランジスタをオフし、次に前記読み出しトランジスタをオンして、前記ＦＤ部の電位を蓄積信号レベルとして前記画素アンプで検出し、
前記読み出しトランジスタをオフすることを特徴とする請求項１記載の固体撮像装置の駆動方法。 The solid-state imaging device may further have a load transistor for setting the output signal line of the pixel amplifier to be constant,
By applying a predetermined constant voltage to the load transistor fixed to the load transistor in the ON state,
Oite within the period the voltage is "High" level of the power supply unit,
The reset transistor is turned on, and the potential of the FD section is detected by the pixel amplifier as a reset level,
The reset transistor is turned off, the read transistor is then turned on, and the potential of the FD section is detected by the pixel amplifier as an accumulation signal level,
The method for driving a solid-state imaging device according to claim 1, wherein the read out transistor is turned off.
前記電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内において、
前記ロードトランジスタをオフ状態にしたまま前記リセットトランジスタをオン／オフし、次に前記読み出しトランジスタをオン／オフして前記光電変換素子をリセット状態にし、
前記電源供給部の電圧を「Ｈｉｇｈ」レベルから「Ｌｏｗ」レベルにして、前記ロードトランジスタをオフ状態にしたまま前記リセットトランジスタをオン／オフし、前記光電変換セルを非選択状態にすることを特徴とする請求項１記載の固体撮像装置の駆動方法。 The solid-state imaging device may further have a load transistor for setting the output signal line of the pixel amplifier to be constant,
Oite within the period the voltage is "High" level of the power supply unit,
With the load transistor turned off, the reset transistor is turned on / off, and then the read transistor is turned on / off to reset the photoelectric conversion element.
Characterized in that by the voltage of the power supply unit from the "High" level to the "Low" level, the said reset transistor while the load transistor is turned off and turned on / off, to the photoelectric conversion cell to a non-selected state A driving method of a solid-state imaging device according to claim 1 .
全ての光電変換セルに共通する前記所定の電位を供給する電源供給部を有し、A power supply unit for supplying the predetermined potential common to all photoelectric conversion cells;
前記電源供給部の電圧が「Ｈｉｇｈ」レベルの期間内に、前記リセットトランジスタをオンして、前記ＦＤ部の電位を前記所定の電位に初期化させた後に、前記リセットトランジスタをオフし、The reset transistor is turned on during a period in which the voltage of the power supply unit is at the “High” level, the potential of the FD unit is initialized to the predetermined potential, and then the reset transistor is turned off.
前記電源供給部の電圧が「Ｌｏｗ」レベルの状態で、前記リセットトランジスタを「Ｈｉｇｈ」にした後に、前記リセットトランジスタを「Ｌｏｗ」にし、前記光電変換セルを非選択状態に戻すことを特徴とする固体撮像装置。After setting the reset transistor to "high" while the voltage of the power supply unit is at "low" level, the reset transistor is set to "low", and the photoelectric conversion cell is returned to the non-selected state. Solid-state imaging device.
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| JP2001233697A JP3782326B2 (en) | 2001-08-01 | 2001-08-01 | Solid-state imaging device and driving method thereof |
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| JP3988189B2 (en) | 2002-11-20 | 2007-10-10 | ソニー株式会社 | Solid-state imaging device |
| JP3794637B2 (en) | 2003-03-07 | 2006-07-05 | 松下電器産業株式会社 | Solid-state imaging device |
| JP4231322B2 (en) | 2003-04-08 | 2009-02-25 | パナソニック株式会社 | Solid-state imaging device and imaging method |
| US7349019B2 (en) | 2003-07-30 | 2008-03-25 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device, camera, power supply device and method thereof |
| US7528872B2 (en) | 2003-08-04 | 2009-05-05 | Olympus Corporation | Image apparatus, driving method, and camera |
| JP4194544B2 (en) | 2003-12-05 | 2008-12-10 | キヤノン株式会社 | Solid-state imaging device and driving method of solid-state imaging device |
| JP4734847B2 (en) * | 2004-05-06 | 2011-07-27 | ソニー株式会社 | Solid-state imaging device |
| JP2005347793A (en) * | 2004-05-31 | 2005-12-15 | Matsushita Electric Ind Co Ltd | Imaging apparatus |
| JP4858281B2 (en) * | 2006-05-16 | 2012-01-18 | コニカミノルタホールディングス株式会社 | Solid-state imaging device |
| JP2008042347A (en) * | 2006-08-02 | 2008-02-21 | Canon Inc | Imaging element, its control method, and imaging device |
| JP5111140B2 (en) | 2008-02-06 | 2012-12-26 | キヤノン株式会社 | Solid-state imaging device driving method, solid-state imaging device, and imaging system |
| JP5153378B2 (en) * | 2008-02-15 | 2013-02-27 | キヤノン株式会社 | Solid-state imaging device and driving method thereof |
| JP5229294B2 (en) * | 2010-10-04 | 2013-07-03 | ソニー株式会社 | Solid-state imaging device |
| JP2012248953A (en) * | 2011-05-25 | 2012-12-13 | Olympus Corp | Solid-state imaging apparatus, imaging apparatus, and signal reading method |
| US9257468B2 (en) | 2012-11-21 | 2016-02-09 | Olympus Corporation | Solid-state imaging device, imaging device, and signal reading medium that accumulates an amplified signal without digitization |
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