JP2003045854A - Plasma treatment method and apparatus thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treatment method and apparatus for preventing dust from being generated easily and for preventing an antenna cover from being cracked easily. SOLUTION: A specific gas is introduced from a gas supply apparatus 2 into a vacuum container 1, at the same time, exhaust is made by a pump 3 as an exhaust apparatus, a specific pressure is maintained inside the vacuum chamber 1, and at the same time 100 MHz high-frequency power is supplied to an antenna 5 that projects in the vacuum chamber 1 by a high-frequency power supply 4 for antennas, thus generating a plasma in the vacuum chamber 1. The inner surface of a slit 14 and the antenna 5 are covered with an antenna cover 15, the bottom surface of the slit 14 is covered with a slit cover 16, the antenna cover 15 is supported by a slit cover 16, and the slit cover 16 is fixed onto a wall surface 17 of the vacuum container for fixing the antenna cover 15.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus used for manufacturing electronic devices such as semiconductors and micromachines.

[0002]

2. Description of the Related Art In manufacturing electronic devices such as semiconductors and micromachines, thin film processing technology by plasma treatment has become more and more important in recent years.

As an example of a conventional plasma processing method, plasma processing using a patch antenna type plasma source will be described below with reference to FIG. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum container 1, the turbo molecular pump 3 serving as an exhaust device evacuates the interior of the vacuum container 1 while maintaining the interior of the vacuum container 1 at a predetermined pressure. By supplying a high frequency power of 100 MHz to the antenna 5 provided so as to project into the vacuum container 1, plasma is generated in the vacuum container 1 and plasma treatment is performed on the substrate 7 placed on the substrate electrode 6. It can be carried out. Further, a substrate electrode high frequency power source 8 for supplying high frequency power to the substrate electrode 6 is provided, and the ion energy reaching the substrate 7 can be controlled. The high frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of parts different from the center and the periphery of the antenna 5 and the surface 27 of the vacuum container 1 facing the substrate 7 are short-circuited by the short pin 10. The dielectric plate 11 is sandwiched between the antenna 5 and the vacuum container 1, and the power feeding rod 9
The short pin 10 connects the antenna 5 to the antenna high frequency power source 4 and the antenna 5 to the vacuum container 1 through through holes provided in the dielectric plate 11, respectively. Also,
The surface of the antenna 5 is covered with an antenna cover 15. The antenna cover 15 is fixed to the antenna 5 with bolts 25. In addition, a groove-shaped space between the dielectric ring 12 and the dielectric plate 11 provided in the peripheral portion of the dielectric plate 11 and a groove between the antenna 5 and the conductor ring 13 provided in the peripheral portion of the antenna 5. A slit 14 formed of a space is provided.

The turbo molecular pump 3 and the exhaust port 19 are arranged immediately below the substrate electrode 6, and the pressure regulating valve 20 for controlling the vacuum container 1 to a predetermined pressure is provided with the substrate electrode 6.
Is an elevating valve located immediately below and above the turbo molecular pump 3. The substrate electrode 6 is formed by the four columns 21.
It is fixed to the vacuum container 1.

[0005]

However, in the plasma processing described in the conventional example, since the plasma density is highest in the slit, the bottom surface 26 of the slit is damaged. Typically, the vacuum container is made of aluminum, but is generally covered with an anodic oxide film (alumite) to prevent corrosion of the inner wall surface of the vacuum container. However, the alumite on the bottom surface of the slit is damaged, and the thickness of the alumite gradually decreases as the plasma treatment is repeated. In our experiment, when the thickness of the alumite was measured before and after the etching treatment of about 1000 sheets, the film thickness was reduced by about 10 μm. When the thickness of alumite becomes insufficient, problems such as corrosion of aluminum as a base material and generation of dust are developed. In order to prevent this, most of the plasma source unit must be disassembled and the heavy and expensive aluminum member must be replaced. Also, the antenna cover 15 has bolts 2
Since it is fixed to the antenna 5 by 5, the deposited film generated by the plasma treatment is peeled off from the vicinity of the bolt 25, and there is a problem that dust is easily generated.

On the other hand, in the plasma processing described in the conventional example, there is a problem that the temperature of the antenna cover 15 rises due to the plasma irradiation. Since the antenna cover 15 and the antenna 5 are vacuum-insulated, the temperature of the antenna cover 15 gradually rises as the plasma processing is repeated. In our experiments, it was found that the temperature of the antenna cover 15 rises to 170 ° C. when the plasma treatment for 5 minutes and the vacuum holding for 1 minute are repeated 6 times. As described above, when the temperature of the antenna cover 15 suddenly changes, not only the dust is generated but also the crack of the antenna cover 15 may be caused.

In view of the above conventional problems, it is an object of the present invention to provide a plasma processing method and apparatus which are less likely to generate dust and crack the antenna cover.

[0008]

A plasma processing method according to the first invention of the present application is to place a substrate on a substrate electrode in a vacuum container,
While supplying gas into the vacuum container, exhausting the inside of the vacuum container and controlling the inside of the vacuum container to a predetermined pressure, a frequency of 50 MH
A plasma processing method in which plasma is generated in a vacuum container by supplying high frequency power of z to 3 GHz to an antenna provided so as to face a substrate electrode, and the substrate is processed. The dielectric plate is sandwiched between the antenna and the dielectric plate so that the antenna and the dielectric plate project into the vacuum container. The annular and groove-shaped slits provided between the antenna and the vacuum container control the plasma distribution on the substrate. The inside surface of the slit and the antenna are covered with the antenna cover, the bottom surface of the slit is covered with the slit cover, and the antenna cover is supported by the slit cover,
It is characterized in that the slit cover is fixed to the wall surface of the vacuum container to process the substrate while the antenna cover is fixed.

In the plasma processing method of the first invention of the present application, preferably, the slit cover is a conductor, and it is desirable to process the substrate in a state in which the slit tube and the wall surface of the vacuum container are electrically connected by the spiral tube. . Alternatively, the slit cover may be an insulator.

In the plasma processing method of the second invention of the present application, the substrate is placed on the substrate electrode in the vacuum container, the inside of the vacuum container is evacuated while supplying gas into the vacuum container, and the inside of the vacuum container is pressurized to a predetermined pressure. A plasma processing method in which plasma is generated in a vacuum container by supplying high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided so as to face a substrate electrode while controlling the substrate, A dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container, and the substrate is formed by an annular groove groove provided between the antenna and the vacuum container. The upper plasma distribution is controlled, the inner surface of the slit and the antenna are covered by the antenna cover, and the antenna and the antenna are covered by the heat conduction sheet provided between the antenna and the antenna cover. While ensuring the thermal conduction between the Tenakaba, characterized by treating the substrate while controlling the temperature of the antenna by supplying a coolant to the antenna.

In the plasma processing method of the second invention of the present application, it is preferable that the heat conductive sheet is a resin and that the dielectric loss tangent of the resin is 0.01 or less.

Further, it is preferable that the thickness of the heat conductive sheet is 0.03 mm to 3 mm.

Preferably, the antenna cover has a thickness of 1
It is desirable that the quartz glass has a diameter of 10 mm to 10 mm.
Alternatively, the antenna cover may be insulating silicon having a thickness of 1 mm to 10 mm.

In the plasma processing method according to the first or second invention of the present application, preferably, a high frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and both the center and the periphery of the dielectric plate are supplied. It is desirable to short-circuit the antenna and the vacuum container with a short pin through through holes that are provided in a plurality of different portions and that are arranged substantially equally with respect to the center of the antenna.

Further, the frequency of the high frequency power supplied to the antenna is preferably 50 MHz to 300 MHz.

A plasma processing apparatus according to the third invention of the present application, a vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a predetermined inside of the vacuum container. Pressure control valve for controlling the pressure of the substrate, a substrate electrode for mounting the substrate in the vacuum container, an antenna provided to face the substrate electrode, and a frequency of 50 M for the antenna.
A plasma processing apparatus having a high frequency power supply capable of supplying a high frequency power of 3 Hz to 3 GHz, wherein a dielectric plate is sandwiched between an antenna and a vacuum container, and the antenna and the dielectric plate project into the vacuum container. An annular groove groove is provided between the antenna and the vacuum container, the inner surface of the slit and the antenna are covered with the antenna cover, the bottom surface of the slit is covered with the slit cover, and the antenna cover is The antenna cover is supported by the slit cover, and the antenna cover is fixed by fixing the slit cover to the wall surface of the vacuum container.

In the plasma processing apparatus according to the third aspect of the present invention, it is preferable that the slit cover is a conductor and that the spiral tube secures electrical continuity between the slit cover and the wall surface of the vacuum container. Alternatively, the slit cover may be an insulator.

A plasma processing apparatus according to a fourth invention of the present application is a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a predetermined inside of the vacuum container. Pressure control valve for controlling the pressure of the substrate, a substrate electrode for mounting the substrate in the vacuum container, an antenna provided to face the substrate electrode, and a frequency of 50 M for the antenna.
A plasma processing apparatus having a high frequency power supply capable of supplying a high frequency power of 3 Hz to 3 GHz, wherein a dielectric plate is sandwiched between an antenna and a vacuum container, and the antenna and the dielectric plate project into the vacuum container. An annular groove groove is provided between the antenna and the vacuum container, the inner surface of the slit and the antenna are covered with an antenna cover, and a heat conduction sheet is provided between the antenna and the antenna cover. In addition, a cooling medium supply device for flowing a cooling medium to the antenna is provided.

In the plasma processing apparatus of the fourth invention of the present application, it is preferable that the heat conductive sheet is a resin and the dielectric loss tangent of the resin is 0.01 or less.

Further, it is preferable that the thickness of the heat conductive sheet is 0.03 mm to 3 mm.

Preferably, the antenna cover has a thickness of 1
It is desirable that the quartz glass has a diameter of 10 mm to 10 mm.
Alternatively, the antenna cover may be insulating silicon having a thickness of 1 mm to 10 mm.

In the plasma processing apparatus of the third or fourth invention of the present application, preferably, a high frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and both the center and the periphery of the dielectric plate are supplied. It is desirable to short-circuit the antenna and the vacuum container with a short pin through through holes that are provided in a plurality of different portions and that are arranged substantially equally with respect to the center of the antenna.

Further, it is preferable that the frequency of the high frequency power source for the antenna is 50 MHz to 300 MHz.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a sectional view of a plasma processing apparatus equipped with a patch antenna type plasma source used in the first embodiment of the present invention. In FIG. 1, a vacuum container 1
While introducing a predetermined gas from the gas supply device 2, the turbo molecular pump 3 as an exhaust device exhausts the gas.
While maintaining a predetermined pressure in the vacuum container 1, high frequency power of 100 MHz is supplied to the antenna 5 by the antenna high frequency power source 4, plasma is generated in the vacuum container 1, and the plasma is placed on the substrate electrode 6. Plasma treatment can be performed on the substrate 7. Further, a substrate electrode high frequency power source 8 for supplying a high frequency power of 400 kHz to the substrate electrode 6 is provided so that the ion energy reaching the substrate 7 can be controlled. The high frequency power supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of parts different from the center and the periphery of the antenna 5 and the surface 27 of the vacuum container 1 facing the substrate 7 are short-circuited by the short pin 10. The dielectric plate 11 is sandwiched between the antenna 5 and the vacuum container 1, and the feeding rod 9 and the short pin 10 are provided.
Penetrates through holes provided in the dielectric plate 11. In addition, a groove-shaped space between the dielectric plate 11 and the dielectric ring 12 provided in the peripheral portion of the dielectric plate 11, and a groove between the antenna 5 and the conductor ring 13 provided in the peripheral portion of the antenna 5. A slit 14 formed of a space is provided.

The inner surface of the slit 14 and the antenna 5 are covered with a quartz glass antenna cover 15 having a thickness of 5 mm, the bottom surface of the slit 14 is covered with a slit cover 16, and the antenna cover 15 is supported by the slit cover 16. The antenna cover 15 is fixed by fixing the cover 16 to the wall surface 17 of the vacuum container. The slit cover 16 is a conductor (aluminum-coated aluminum), and the slit cover 1 is formed by the spiral tube 18.
6 and the vacuum chamber wall surface 17 are electrically connected.

The turbo molecular pump 3 and the exhaust port 19 are arranged immediately below the substrate electrode 6, and the pressure regulating valve 20 for controlling the vacuum container 1 to a predetermined pressure is provided with the substrate electrode 6.
Is an elevating valve located immediately below and above the turbo molecular pump 3. The substrate electrode 6 is formed by the four columns 21.
It is fixed to the vacuum container 1.

A plan view of the antenna 5 is shown in FIG. In FIG. 2, the short pins 10 are provided at three places,
The respective short pins 10 are evenly arranged with respect to the center of the antenna 5.

When the thickness of the alumite of the slit cover was measured before and after the etching treatment of about 1000 sheets in the plasma treatment apparatus having the above-mentioned constitution, it was about 10
A decrease in film thickness of μm was observed. However, since the slit cover is lightweight and inexpensive, it was possible to continue the plasma processing by replacing it as a consumable part.

Further, since there is no singular point such as a bolt mounting hole on the surface of the antenna cover 15, the deposited film produced by the plasma treatment was not peeled off, and dust was hardly generated.

Next, a second embodiment of the present invention will be described with reference to FIG.

FIG. 3 is a sectional view of a plasma processing apparatus equipped with a patch antenna type plasma source used in the second embodiment of the present invention. In FIG. 3, the vacuum container 1
While introducing a predetermined gas from the gas supply device 2, the turbo molecular pump 3 as an exhaust device exhausts the gas.
While maintaining a predetermined pressure in the vacuum container 1, high frequency power of 100 MHz is supplied to the antenna 5 by the antenna high frequency power source 4, plasma is generated in the vacuum container 1, and the plasma is placed on the substrate electrode 6. Plasma treatment can be performed on the substrate 7. Further, a substrate electrode high frequency power source 8 for supplying a high frequency power of 400 kHz to the substrate electrode 6 is provided so that the ion energy reaching the substrate 7 can be controlled. The high frequency power supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of parts different from the center and the periphery of the antenna 5 and the surface 27 of the vacuum container 1 facing the substrate 7 are short-circuited by the short pin 10. The dielectric plate 11 is sandwiched between the antenna 5 and the vacuum container 1, and the feeding rod 9 and the short pin 10 are provided.
Penetrates through holes provided in the dielectric plate 11. In addition, a groove-shaped space between the dielectric plate 11 and the dielectric ring 12 provided in the peripheral portion of the dielectric plate 11, and a groove between the antenna 5 and the conductor ring 13 provided in the peripheral portion of the antenna 5. A slit 14 formed of a space is provided.

The inner surface of the slit 14 and the antenna 5 are covered with a quartz glass antenna cover 15 having a thickness of 5 mm. Made of silicon resin with a thickness of 0.2 mm between the antenna 5 and the antenna cover 15 (dielectric loss tangent = 0.005)
A heat conductive sheet 22 is provided, and a coolant supply device 23 for flowing a coolant to the antenna 5 is provided. A coolant passage 24 is formed inside the antenna 5, and a coolant inlet / outlet passage is provided in the power feeding rod 9.

The turbo molecular pump 3 and the exhaust port 19 are arranged directly below the substrate electrode 6, and the pressure regulating valve 20 for controlling the vacuum container 1 to a predetermined pressure is provided with the substrate electrode 6.
Is an elevating valve located immediately below and above the turbo molecular pump 3. The substrate electrode 6 is formed by the four columns 21.
It is fixed to the vacuum container 1. The planar arrangement of the short pins 10 is the same as that of FIG. 2 already described.

In the plasma processing apparatus having the above-described structure, the plasma processing for 5 minutes and the vacuum holding for 1 minute are 100 times.
The temperature of the antenna cover 15 is 100 ℃ even after repeated
Kept below. It is considered that this is because the thin heat conductive sheet 22 is sandwiched between the antenna cover 15 and the antenna 5, and the antenna 5 is cooled by the refrigerant. The heat conductive sheet 22 made of silicon resin is soft and adheres to the antenna 5 and the antenna cover 15, and
Since the heat conductive sheet 22 is thin, it is highly effective in actively exchanging heat between the antenna cover 15 and the antenna 5. As described above, as a result of performing the plasma treatment while controlling the temperature of the antenna cover 15, generation of dust was not observed, and the antenna cover 15 was not cracked.

Next, a third embodiment of the present invention will be described with reference to FIG.

FIG. 4 shows a sectional view of a plasma processing apparatus equipped with a patch antenna type plasma source used in the third embodiment of the present invention. In FIG. 4, the vacuum container 1
While introducing a predetermined gas from the gas supply device 2, the turbo molecular pump 3 as an exhaust device exhausts the gas.
While maintaining a predetermined pressure in the vacuum container 1, high frequency power of 100 MHz is supplied to the antenna 5 by the antenna high frequency power source 4, plasma is generated in the vacuum container 1, and the plasma is placed on the substrate electrode 6. Plasma treatment can be performed on the substrate 7. Further, a substrate electrode high frequency power source 8 for supplying a high frequency power of 400 kHz to the substrate electrode 6 is provided so that the ion energy reaching the substrate 7 can be controlled. The high frequency power supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of parts different from both the center and the periphery of the antenna 5 and the surface 27 of the vacuum container 1 facing the substrate 7 are short-circuited by the short pin 10. The dielectric plate 11 is sandwiched between the antenna 5 and the vacuum container 1, and the feeding rod 9 and the short pin 10 are provided.
Penetrates through holes provided in the dielectric plate 11. In addition, a groove-shaped space between the dielectric plate 11 and the dielectric ring 12 provided in the peripheral portion of the dielectric plate 11 and a groove between the antenna 5 and the conductor ring 13 provided in the peripheral portion of the antenna 5. A slit 14 formed of a space is provided.

The inner surface of the slit 14 and the antenna 5 are covered with a 5 mm-thick quartz glass antenna cover 15, the bottom surface of the slit 14 is covered with a slit cover 16, and the antenna cover 15 is supported by the slit cover 16. The antenna cover 15 is fixed by fixing the cover 16 to the wall surface 17 of the vacuum container. The slit cover 16 is a conductor (aluminum-coated aluminum), and the slit cover 1 is formed by the spiral tube 18.
6 and the vacuum chamber wall surface 17 are electrically connected.

A space between the antenna 5 and the antenna cover 15 is made of silicon resin having a thickness of 0.2 mm (dielectric loss tangent = 0.00).
5) The heat conductive sheet 22 is provided, and the cooling medium supply device 23 for flowing the cooling medium to the antenna 5 is provided. A coolant passage 24 is formed inside the antenna 5, and a coolant inlet / outlet passage is provided in the power feeding rod 9.

The turbo molecular pump 3 and the exhaust port 19 are arranged directly below the substrate electrode 6, and the pressure regulating valve 20 for controlling the vacuum container 1 to a predetermined pressure is provided with the substrate electrode 6.
Is an elevating valve located immediately below and above the turbo molecular pump 3. The substrate electrode 6 is formed by the four columns 21.
It is fixed to the vacuum container 1. The planar arrangement of the short pins 10 is the same as that of FIG. 2 already described.

When the thickness of the alumite of the slit cover was measured before and after performing the etching treatment of about 1000 sheets in the plasma treatment apparatus having the above-mentioned constitution, it was about 10
A decrease in film thickness of μm was observed. However, since the slit cover is lightweight and inexpensive, it was possible to continue the plasma processing by replacing it as a consumable part.

Further, since there is no singular point such as a bolt mounting hole on the surface of the antenna cover 15, the deposited film generated by the plasma treatment was not peeled off, and dust was hardly generated.

Even when the plasma treatment for 5 minutes and the vacuum holding for 1 minute were repeated 100 times, the temperature of the antenna cover 15 was kept at 100 ° C. or lower. It is considered that this is because the thin heat conductive sheet 22 is sandwiched between the antenna cover 15 and the antenna 5, and the antenna 5 is cooled by the refrigerant. The silicon resin heat conduction sheet 22 is soft and adheres to the antenna 5 and the antenna cover 15, and since the heat conduction sheet 22 is thin, the effect of vigorous heat exchange between the antenna cover 15 and the antenna 5 is high. As described above, as a result of performing the plasma treatment while controlling the temperature of the antenna cover 15, generation of dust was not observed, and the antenna cover 15 was not cracked.

In the embodiment of the present invention described above,
Only a part of various variations regarding the shape of the vacuum container, the structure and arrangement of the plasma source, and the like are merely exemplified in the application range of the present invention. In applying the present invention,
It goes without saying that various variations other than those exemplified here are conceivable.

In the embodiment of the present invention described above, the slit cover is a conductor, and the spiral tube ensures the continuity between the slit cover and the wall surface of the vacuum container. By ensuring electrical connection with the wall surface, the electromagnetic field excited in the vacuum container is stabilized, and the occurrence of abnormal discharge can be suppressed. Alternatively, even if the slit cover is an insulator, the same effect can be obtained.

The case where the heat conductive sheet is a silicon resin having a thickness of 0.2 mm and the dielectric loss tangent thereof is 0.005 has been exemplified, but the thickness and the material of the heat conductive sheet are not limited to this. Absent. In order to exchange heat between the antenna and the antenna cover, it is desirable that the heat conductive sheet is soft and has excellent adhesion, but if it is too thin, it may not be possible to absorb the insufficient flatness of the antenna and antenna cover. Further, if it is too thick, the heat capacity of the heat conductive sheet itself becomes large. Therefore, it is preferably about 0.03 mm to 3 mm. Also, if the heat dissipation sheet has a large dielectric loss tangent, dielectric loss may occur due to the influence of the high-frequency power supplied to the antenna, causing heat generation and melting of the resin. Preferably there is. Also, the case where the antenna cover is made of quartz glass having a thickness of 5 mm is illustrated, but other ceramic-based materials,
It is contemplated that it may be insulating silicon. But,
Since the ceramic material contains a large amount of impurities, it may cause dust or contamination, which is not preferable.
On the other hand, the use of insulating silicon has the effect of improving the etching selection ratio in the etching process of an insulating film such as a silicon oxide film. Further, if the thickness of the antenna cover is too thin, the mechanical strength will be insufficient, and if it is too thick, the cooling efficiency will decrease due to the heat storage effect.
It is preferably 0 mm.

Further, a high frequency voltage is fed to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a plurality of parts different from the center and the periphery of the dielectric plate, and with respect to the center of the antenna. The case where the antenna and the vacuum vessel are short-circuited by the shorting pin via the through holes that are arranged substantially equally has been described as an example. With such a configuration, the isotropy of plasma can be further enhanced. Needless to say, when the substrate is small, sufficiently high in-plane uniformity can be obtained without using the short pin.

Further, the case where the frequency of the high frequency power applied to the antenna is 100 MHz has been described.
In the patch antenna used in the present invention, 50 MHz
A frequency of 3 GHz to 3 GHz can be used.

The case where the frequency of the high frequency power supplied to the substrate electrode is 400 kHz has been described.
In controlling the ion energy reaching the substrate,
Other frequencies, for example 100 kHz to 100 MHz
Needless to say, the high frequency power of can be used. Alternatively, plasma treatment with weak ion energy can be performed by utilizing a slight difference between the plasma potential and the substrate potential without supplying high frequency power to the substrate electrode.

[0050]

As is apparent from the above description, according to the plasma processing method of the first invention of the present application, the substrate is placed on the substrate electrode in the vacuum container, and a vacuum is generated while supplying gas into the vacuum container. Plasma is generated in the vacuum container by evacuating the container and supplying a high frequency power of 50 MHz to 3 GHz to an antenna provided facing the substrate electrode while controlling the vacuum container to a predetermined pressure. And a substrate is processed by a plasma processing method, wherein a dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container. The plasma distribution on the substrate is controlled by the annular and groove-shaped slits provided on the substrate, the inner surface of the slit and the antenna are covered by the antenna cover, and the bottom surface of the slit is covered by the slit cover. The plasma processing method in which dust is less likely to occur because the substrate is processed in a state in which the antenna cover is covered more, the antenna cover is supported by the slit cover, and the slit cover is fixed to the wall surface of the vacuum container to fix the antenna cover. Can be provided.

Further, according to the plasma processing method of the second invention of the present application, the substrate is placed on the substrate electrode in the vacuum container, the gas is supplied to the vacuum container, the interior of the vacuum container is evacuated, and the inside of the vacuum container is exhausted. Is controlled to a predetermined pressure, high-frequency power having a frequency of 50 MHz to 3 GHz is supplied to an antenna provided so as to face the substrate electrode, thereby generating plasma in the vacuum container and treating the substrate. A dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure in which they project into the vacuum container, and are annular and groove-shaped provided between the antenna and the vacuum container. The distribution of plasma on the substrate is controlled by the slits, the inner surface of the slits and the antenna are covered by the antenna cover, and the heat conduction sheet provided between the antennas covers the antenna cover. Provides a plasma processing method that does not easily generate dust or cracks in the antenna cover because the substrate is processed while controlling the temperature of the antenna by flowing a coolant to the antenna while ensuring heat conduction between the antenna and the antenna cover. can do.

According to the plasma processing apparatus of the third invention of the present application, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a vacuum. A pressure regulating valve for controlling the inside of the container to a predetermined pressure, and a substrate electrode for mounting the substrate in the vacuum container,
What is claimed is: 1. A plasma processing apparatus comprising: an antenna provided to face a substrate electrode; and a high frequency power supply capable of supplying a high frequency power of 50 MHz to 3 GHz to the antenna, wherein a dielectric plate is provided between the antenna and the vacuum container. It is sandwiched, and the antenna and the dielectric plate have a structure protruding into the vacuum container, and an annular groove groove is provided between the antenna and the vacuum container, and the inner surface of the slit and the antenna are covered by the antenna cover. The bottom of the slit is covered by the slit cover, the antenna cover is supported by the slit cover, and the antenna cover is fixed by fixing the slit cover to the wall surface of the vacuum container, so dust is unlikely to occur. A plasma processing apparatus can be provided.

Further, according to the plasma processing apparatus of the fourth invention of the present application, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a vacuum. A pressure regulating valve for controlling the inside of the container to a predetermined pressure, and a substrate electrode for mounting the substrate in the vacuum container,
What is claimed is: 1. A plasma processing apparatus comprising: an antenna provided to face a substrate electrode; and a high frequency power supply capable of supplying a high frequency power of 50 MHz to 3 GHz to the antenna, wherein a dielectric plate is provided between the antenna and the vacuum container. It is sandwiched, and the antenna and the dielectric plate have a structure protruding into the vacuum container, and an annular groove groove is provided between the antenna and the vacuum container, and the inner surface of the slit and the antenna are covered by the antenna cover. Since the heat conductive sheet is provided between the antenna and the antenna cover and the cooling medium supply device for flowing the cooling medium to the antenna is provided, it is possible to provide a plasma processing apparatus in which dust generation and cracking of the antenna cover do not easily occur. it can.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of a plasma processing apparatus used in a first embodiment of the present invention.

FIG. 2 is a sectional view showing the configuration of the plasma processing apparatus used in the first embodiment of the present invention.

FIG. 3 is a sectional view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

FIG. 4 is a sectional view showing a configuration of a plasma processing apparatus used in a third embodiment of the present invention.

FIG. 5 is a sectional view showing a configuration of a plasma processing apparatus used in a conventional example.

[Explanation of symbols]

1 vacuum container 2 gas supply device 3 Turbo molecular pump 4 High frequency power supply for antenna 5 antennas 6 substrate electrodes 7 substrate 8 High frequency power supply for substrate electrode 9 power supply rod 10 short pins 11 Dielectric plate 12 Dielectric ring 13 conductor ring 14 slits 15 antenna cover 16 slit cover 17 Vacuum container wall 18 spiral tube 19 exhaust port 20 Regulator 21 props

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yukihiro Maekawa             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor, I. Matsuda             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 4G075 AA24 CA25 CA47 DA02 DA20                       EB01 EB42 EC21 FA01 FB01                       FB06 FC11 FC15                 5F004 AA16 BA20 BB11 BB32 DB03

Claims (20)

[Claims] 1. A gas is supplied into the vacuum container, the inside of the vacuum container is evacuated, and the inside of the vacuum container is controlled to a predetermined pressure.
A plasma processing method in which high frequency power having a frequency of 50 MHz to 3 GHz is supplied to an antenna provided so as to face a substrate electrode on which a substrate is mounted to generate plasma in a vacuum container to process the substrate. , A dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container, and are formed by an annular groove groove provided between the antenna and the vacuum container. The plasma distribution on the substrate is controlled, the inner surface of the slit and the antenna are covered by the antenna cover, the bottom of the slit is covered by the slit cover, the antenna cover is supported by the slit cover, and the slit cover is fixed to the wall surface of the vacuum container. Plasma processing characterized in that the substrate is processed while the antenna cover is being fixed by Law. 2. The plasma processing method according to claim 1, wherein the slit cover is a conductor, and the substrate is processed in a state in which the spiral tube secures electrical continuity between the slit cover and the wall surface of the vacuum container. 3. The plasma processing method according to claim 1, wherein the slit cover is an insulator. 4. A substrate is placed on a substrate electrode in a vacuum container,
While supplying gas into the vacuum container, exhausting the inside of the vacuum container and controlling the inside of the vacuum container to a predetermined pressure, a frequency of 50 MH
A plasma processing method in which plasma is generated in a vacuum container by supplying high frequency power of z to 3 GHz to an antenna provided so as to face a substrate electrode, and the substrate is processed. The dielectric plate is sandwiched between the antenna and the dielectric plate so that the antenna and the dielectric plate project into the vacuum container. The annular and groove-shaped slits provided between the antenna and the vacuum container control the plasma distribution on the substrate. The inner surface of the slit and the antenna are covered with the antenna cover, and the heat conduction sheet provided between the antenna and the antenna cover ensures heat conduction between the antenna and the antenna cover, while flowing the coolant through the antenna. A plasma processing method comprising: processing a substrate while controlling the temperature of an antenna. 5. The plasma processing method according to claim 4, wherein the heat conductive sheet is made of resin, and the dielectric loss tangent of the resin is 0.01 or less. 6. The plasma processing method according to claim 4, wherein the thickness of the heat conductive sheet is 0.03 mm to 3 mm. 7. The antenna cover has a thickness of 1 mm to 10 m
5. The plasma processing method according to claim 1, wherein the plasma processing method is m quartz glass. 8. The antenna cover has a thickness of 1 mm to 10 m.
5. The plasma processing method according to claim 1 or 4, wherein m is insulating silicon. 9. A high-frequency voltage is fed to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a plurality of portions different from the center and the periphery of the dielectric plate and with respect to the center of the antenna. The plasma processing method according to claim 1 or 4, wherein the antenna and the vacuum container are short-circuited by a shorting pin through the through holes that are arranged substantially equally. 10. The plasma processing method according to claim 1, wherein the high frequency power supplied to the antenna has a frequency of 50 MHz to 300 MHz. 11. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a pressure regulating valve for controlling the inside of the vacuum container to a predetermined pressure. And a substrate electrode for mounting the substrate in the vacuum container, an antenna provided so as to face the substrate electrode, and a high-frequency power source capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna. A plasma processing apparatus, in which a dielectric plate is sandwiched between an antenna and a vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container, and are annular and groove-shaped between the antenna and the vacuum container. The slit is provided, the inner surface of the slit and the antenna are covered with the antenna cover, the bottom surface of the slit is covered with the slit cover, and the antenna cover is supported by the slit cover. A plasma processing apparatus having a structure in which an antenna cover is fixed by fixing a lit cover to a wall surface of a vacuum container. 12. The plasma processing apparatus according to claim 11, wherein the slit cover is a conductor, and the spiral tube ensures electrical continuity between the slit cover and the wall surface of the vacuum container. 13. The plasma processing apparatus according to claim 11, wherein the slit cover is an insulator. 14. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a pressure regulating valve for controlling the inside of the vacuum container to a predetermined pressure. And a substrate electrode for mounting the substrate in the vacuum container, an antenna provided so as to face the substrate electrode, and a high-frequency power source capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna. A plasma processing apparatus, in which a dielectric plate is sandwiched between an antenna and a vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container, and are annular and groove-shaped between the antenna and the vacuum container. A slit is provided, the inner surface of the slit and the antenna are covered with an antenna cover, a heat conductive sheet is provided between the antenna and the antenna cover, and a coolant supply device for flowing a coolant to the antenna is provided. A plasma processing apparatus comprising: 15. The plasma processing apparatus according to claim 14, wherein the heat conductive sheet is made of resin, and the dielectric loss tangent of the resin is 0.01 or less. 16. The plasma processing apparatus according to claim 14, wherein the heat conductive sheet has a thickness of 0.03 mm to 3 mm. 17. The antenna cover has a thickness of 1 mm to 10
The plasma processing apparatus according to claim 11 or 14, wherein the plasma processing apparatus is a quartz glass having a size of mm. 18. The antenna cover has a thickness of 1 mm to 10
mm of insulating silicon.
The plasma processing apparatus according to 1 or 14. 19. A high-frequency voltage is fed to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a plurality of parts different from the center and the periphery of the dielectric plate and with respect to the center of the antenna. The plasma processing apparatus according to claim 11 or 14, wherein the antenna and the vacuum container are short-circuited by a shorting pin through the through holes that are arranged substantially equally. 20. The high frequency power source for an antenna has a frequency of 5
The plasma processing apparatus according to claim 11 or 14, characterized in that the frequency is 0 MHz to 300 MHz.