JP2003041364A - Film forming apparatus for superconductive coaxial part and superconductive coaxial component manufactured therewith - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film forming apparatus for a superconductive coaxial part, which manufactures an inexpensive superconductive coaxial component having adequate cooling efficiency and satisfactory superconductivity, by forming a thin film of Nb on the outer surface of a copper substrate with sputtering. SOLUTION: This apparatus comprises fixing a copper substrate 41 on a substrate mount 6 at the bottom plate of a body 1, arranging a toroidal target 40 consisting of Nb around it, evacuating the inside of the body 1 with pumps 30, 31, and 32, and passing a predetermined quantity of Ar gas in a space between the target 40 and the copper substrate 41, from an Ar introduction pipe 37. High frequency voltage between the toroidal target 40 and the copper substrate 41, applied by a high frequency power source 21, ionizes Ar gas into Ar ions, makes them collide with the toroidal target 40, makes particles of Nb emit, and makes the Nb particles adhere to the outer surface of the copper substrate 41, to form the film. The apparatus makes the target 40 move to an upper part from the lower part with a rotating shaft 16 of a motor 15, to continuously form the film.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superconducting coaxial section, and is used as a cavity coaxial section component applied to a superconducting accelerator.

[0002]

2. Description of the Related Art A superconducting high-frequency component is a component of a superconducting accelerator, and is a component placed in an atmosphere cooled by liquid helium to minus 269 degrees. Conventionally, this part is Nb
(Pure niobium) was processed and assembled to produce a cylindrical part, and Nb was an expensive material and had a poor cooling efficiency. Therefore, instead of processing Nb material, Cu
By forming a thin film of Nb on the inner surface of the cylindrical part of the (copper) substrate by sputtering, it is effective to manufacture the superconducting high frequency part at low cost and improve the cooling performance. The superconducting coaxial part is a superconducting high-frequency component that requires a thin film of Nb to be deposited on the inner and outer surfaces of a cylindrical substrate. Conventionally, the technique for depositing the inner surface of a copper substrate has been established, but the outer surface of the copper substrate has been established. A technique for depositing Nb has not been established, and the realization of this technique has been desired.

[0003]

As described above, the superconducting coaxial portion is desired to be manufactured by forming a film of Nb on the outer surface of the cylindrical copper substrate, and such a superconducting high frequency component. If you manufacture, by improving the cooling performance by using copper with high thermal conductivity, the superconducting characteristics are improved,
An inexpensive and high-performance superconducting coaxial unit is realized.

In view of the above, the present invention provides a superconducting material which forms a uniform film on the outer surface of a cylindrical copper substrate by continuously sputtering Nb in the axial direction to improve cooling performance and superconducting characteristics. An object of the present invention is to provide a film forming apparatus capable of manufacturing a coaxial portion.

[0005]

The present invention provides the following means (1) to (7) in order to solve the above-mentioned problems.

(1) A container main body, a main body bottom plate that can be attached to and detached from the main body, a mounting base for fixing a cylindrical copper substrate fixed to the center of the main body bottom plate, and a suspension means for suspending the main body from above in the main body A ring-shaped target made of niobium that is vertically movably arranged at a predetermined distance from the periphery of the copper substrate that is suspended and fixed to the mounting base, and the periphery of the copper substrate by vertically moving the supporting means. Drive means for vertically moving the target in the axial direction, a vacuum pump for bringing the inside of the body into a vacuum state, and an argon gas for flowing an argon gas between the target and the outer surface of the copper substrate in the body. A superconducting coaxial unit comprising an introducing means and a power supply for applying a high-frequency voltage between the target and the copper substrate, wherein a thin film of niobium is continuously formed on the outer surface of the copper substrate. Membrane device.

(2) A container body, a body bottom plate that is attachable to and detachable from the body, a mounting plate that is vertically movable in the center of the body bottom plate, and that mounts a cylindrical copper substrate, and from inside the body from above. A ring-shaped target made of niobium, which is suspended by a supporting means and fixed to the mounting base, is mounted at a predetermined distance from the periphery of the copper substrate, drive means for moving the mounting plate up and down, and inside the main body. A vacuum pump for making a vacuum state, an argon gas introducing means for flowing an argon gas between the target and the copper substrate outer surface in the main body, and a high frequency voltage between the target and the copper substrate. A superconducting coaxial portion film forming apparatus comprising: a power supply for applying a voltage; and continuously forming a thin film of niobium on the outer surface of the copper substrate.

(3) The superconducting coaxial portion film forming apparatus as described in (1) or (2), wherein a permanent magnet is arranged around the ring-shaped target.

(4) A shutter, which is coaxial with the target and is arranged at a predetermined distance from the periphery of the target when the target rises, is attached to the upper part of the main body, and the target and the shutter are provided at the initial stage of driving. The superconducting coaxial portion film-forming apparatus according to (1), characterized in that a high-frequency voltage is applied between the target and the impurities on the inner surface of the target can be removed.

(5) The superconducting coaxial portion film forming apparatus according to (1) or (2), characterized in that a heater to be inserted into the copper substrate is suspended and attached to the upper portion of the main body.

(6) A shutter, which is coaxial with the target and is arranged at a predetermined distance from the periphery of the target when the target is elevated, is mounted on the mounting plate. The superconducting coaxial portion film forming apparatus according to (2), characterized in that a high frequency voltage is applied to remove impurities on the inner surface of the target.

(7) A superconducting coaxial component manufactured by the film forming apparatus described in (1) or (2) above.

In (1) of the present invention, a cylindrical copper substrate is attached to a mounting base on the bottom plate of the main body, the inside of the main body is kept at a predetermined vacuum degree by a vacuum pump, and a predetermined amount is provided by an argon gas introducing means. Introduce argon gas. In order to perform the sputtering, first, the target is set by the driving means so as to be located at the lowest stage around the copper substrate, and the high frequency voltage is applied between the target and the copper substrate by the high frequency power source,
For example, 13.56MH _Z, applying a power of 3KW, discharges between the target and the copper substrate. This discharge ionizes the argon gas flowing between the target and the copper substrate, ionizes the argon, and the ionized argon particles collide with the inner surface of the target by the action of the applied voltage. Due to this collision, niobium particles peel off from the inner surface of the target and fly out, and adhere to the outer surface of the copper substrate to form a film.
The niobium thin film on the outer surface of the copper substrate is formed in this way, but the driving means is controlled at a preset speed so that the thickness becomes about 3 μ, and the target is gradually raised through the supporting means. A thin film of niobium can be formed to a uniform thickness continuously over the entire length of the outer surface of the copper substrate.

In the second aspect of the present invention, the target is fixed and the copper substrate is vertically moved, instead of the method of vertically moving the target as in the first aspect of the invention. The copper substrate is fixed to the mounting plate, and the mounting plate is moved up and down by controlling the driving means. Therefore, in the copper substrate, first, the tip or the base is inserted into the target, a high frequency voltage is applied between the target and the copper substrate, and the copper substrate is gradually lowered or raised. Similarly, a niobium thin film can be formed uniformly over the entire length of the copper substrate.

In (3) of the present invention, a permanent magnet is arranged around the target, a magnetic field formed by the permanent magnet is generated between the target and the copper substrate, and ionized argon is generated by the magnetic field. Since the density of argon ions is increased by concentrating with the copper substrate, the efficiency of niobium film formation is increased.

In (4) of the present invention, the shutter is attached to the upper part of the main body, and the target is moved to the uppermost portion at the start of sputtering to insert the shutter into the target. When a high-frequency voltage is applied between the target and the shutter in this state, discharge occurs, the argon gas is ionized and ionized, and collides with the inner surface of the target, so that the impurities adhering to the inner surface of the target are peeled off. Since the surface of niobium is exposed, the inner peripheral surface of the target of the invention of the above (1) can be cleaned before the operation.

In (5) of the present invention, since the heater is inserted inside the copper substrate, the copper substrate is heated to about 300 degrees, and the niobium is effectively attached to the copper substrate.

In (6) of the present invention, the shutter is attached to the attachment plate, and the attachment plate is moved at the start of sputtering to insert the shutter into the target.
When a high-frequency voltage is applied between the target and the shutter in this state, discharge occurs, the argon gas is ionized and ionized, and collides with the inner surface of the target, so that the impurities adhering to the inner surface of the target are peeled off. The surface of the niobium is exposed, so that the inner peripheral surface of the target of the invention of the above (2) can be cleaned before the operation.

In (7) of the present invention, the above (1) and (2)
It is a superconducting coaxial part manufactured by the film forming apparatus of the present invention, which is cheaper and cooling efficiency by forming niobium on the outer surface of the copper substrate as compared with the conventional case where niobium is processed to manufacture the coaxial part. A good superconducting coaxial portion can be easily manufactured.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be specifically described below with reference to the drawings. FIG. 1 is an overall configuration diagram of a superconducting coaxial portion film forming apparatus according to a first embodiment of the present invention. In FIG. 1, 1 is a main body, 2 is a bottom plate of the main body, and a hole 2a is provided at the center thereof to fix a board mounting base 6.
A hole 6a for connecting to a device for vacuuming is provided at the center of the substrate mount 6. Reference numeral 3 denotes a flange of the main body 1, which is attached to the main body bottom plate 2 and bolts / nuts 4,
The main body bottom plate 2 can be removed. A vacuum sensor 5 detects the degree of vacuum inside the main body 1.

Bellows 20a, 20b are provided on the upper portion of the main body 1.
Are provided at two places and communicate with the inside of the main body 1. The upper end of the bellows 20a is closed by the lid 24, and the upper end of the bellows 20b is closed by the lid 20b. The support pipes 17, 1 are respectively provided at the centers of the lids 24, 25 as will be described later.
8 is inserted and fixed. Bellows 20a, 20
b are respectively connected to the main body 1, and the lower lid 11 is interposed between the upper and lower flanges 12a and 12b via the insulator 13.
It is fixed to.

FIG. 2 is a view taken along the line AA of FIG. 1 and shows the arrangement of the bellows 20a and 20b and the arrangement of the upper lid. In the figure, the circular main body 1 and the upper lid 10 are shown, but they are not necessarily circular. Instead, it may be a square shape.

An upper lid 10 is attached to the upper surfaces of the lids 24, 25 of the bellows 20a, 20b, a hole 10a is provided in the upper lid 10, and a rotary shaft 16 of a motor 15 is rotatably inserted therethrough. The lower end of is attached to the lower lid 11 rotatably. The lower lid 11 is attached to the upper flange of the main body 1, and a shutter 14 is attached to the center of the lower lid so as to be suspended inside the main body 1.

The motor 15 is connected to a rotary shaft 16, and the rotary shaft 16 is screwed to form a hole 10 a in the upper lid 10.
Is screwed into the mounting member 8 fixed to the upper surface of the rotary shaft 16, and the rotating shaft 16 is rotated when the motor 15 is rotated. The rotating shaft 16 moves up and down in the hole 10a through the mounting member 8 and is attached to the lower end of the rotating shaft 16. The configuration is such that the upper lid 10 is moved in the vertical direction with respect to the connected lower lid 11. In addition, 9 is an insulator which electrically insulates between the upper lid 10 and the lower lid 11.

The upper lid 10 has a matching device 2 from a high frequency power source 21.
13.56MH _Z, the high-frequency power of 3KW is applied through the 2. The high frequency power is applied to the ring-shaped target 40 from the upper lid 10 through the lids 24 and 25 and the support pipes 17 and 18. The ring-shaped target 40 is a ring-shaped target made of Nb, and is supported by the lids 24 and 25 so as to be vertically movable by the support pipes 17 and 18 with a predetermined gap kept around the copper substrate 41.

The support pipes 17 and 18 are pipes through which cooling water flows, and are connected to a coil-shaped pipe 19 which is wound around the outer periphery of the ring-shaped target 40 and attached. After passing through the coil-shaped pipe 19 and cooling the periphery of the ring-shaped target 40, it flows out through the support pipe 18 to the outside. Further, a permanent magnet 42 is arranged around the outer circumference of the ring-shaped target 40, so that the particles of argon ionized by the magnetic field are effectively concentrated inside the ring-shaped target 40, as will be described later. It is a thing.

A board mounting base 6 is mounted in the center of the body bottom plate 2 inside the body 1, and a lower flange of a copper substrate 41 is mounted on the board mounting base 6 by means of bolts or the like, and the center of the ring-shaped target 40 is mounted. Placed in the department. The heater 26 is inserted inside the copper substrate 41, the heater 26 is suspended from the lower lid 11 and fixed, and a current is passed through the heater to heat the copper substrate 41 to about 300 ° C.

A hole 2a is provided at the center of the bottom plate 2 of the main body at the position of the hole 6a of the substrate mounting base 6, and the connecting portion 35 of the vacuum pump is connected thereto. A gate valve 33 and an L-shaped valve 36 are respectively connected to the left and right ends of the connecting portion 35, the ion valve 32 is connected to the gate valve 33, and the turbo molecular pump 31 and the rotary pump are connected to the L-shaped valve 36 via an orifice 34. 30 are connected to each other, and the inside of the main body 1 is evacuated through the holes 2a of the main body bottom plate 2.
Moreover, the introduction pipe 37 of A _r (argon) gas in the main body bottom plate 2
Are connected via an opening / closing valve 38, and argon gas is introduced into the main body 1.

In the apparatus according to the first embodiment having the above-mentioned structure, first, the bolt / nut 4 is removed to remove the main body bottom plate 2 of the main body 1, the copper substrate 41 is mounted on the substrate mounting base 6, and the heater 26 is also mounted. Is set in the copper substrate 41, and the copper substrate 41 is arranged at the center of the ring-shaped target 40. Then, the inside of the main body 1 is evacuated in the following manner.

First, the rotary pump 30 is operated to perform pre-drawing, and after roughing for a predetermined time, the turbo molecular pump 31 is operated, and then the ion pump 32 is operated to perform vacuuming, predetermined degree of vacuum while viewing the sensor 5, for example, at a pressure of about 10 ^-5 P _a, introduces a a _r gas opens the opening and closing valve 38 of a _r gas inlet tube 37.
The concentration of _Ar gas is controlled by operating the turbo molecular pump 31 to adjust the opening of the orifice 34 and adjusting the inflow amount of _Ar gas.

The degree of vacuum reaches a predetermined value, _Ar gas is introduced at a predetermined flow rate, and the copper substrate 41 and the ring-shaped target 4 are introduced.
Flow evenly between 0 and 0. The flow rate is, for example, 1 scc
m, is allowed to flow in 0.3P _a. Next, first, the motor 15 is driven to rotate the rotary shaft 16 to move the upper lid 10 upward with respect to the lower lid 11. The upper lid 10 can be easily moved upward by extending the bellows 20a and 20b with respect to the main body 1, and when the upper lid 10 moves up, the upper lid 10
The support pipes 17 and 18 fixed to the lids 24 and 25 are also raised together with the lids 24 and 25 fixed to the ring-shaped target 40.

First, as shown in FIG.
The outer circumference of the shutter 14 by raising the ring-shaped target 40.
Place the ring-shaped target 40 around the
A high frequency voltage is applied to the shutter 40 for a predetermined time, and the shutter 14
A discharge is generated between _rTo ionize A_rion
And A_rIons on the inner surface of the ring-shaped target 40
Impinge on the inner surface to remove impurities on the Nb surface
Separated and removed, impurities on the Nb surface are removed. That
After that, the motor 15 is rotated in the reverse direction and the bellows together with the upper lid 10 are rotated.
By contracting 20a and 20b, the support pipe 1
The ring-shaped target 40 is lowered through 7, 18
Lower the ring-shaped target 40 to the base of the copper substrate 41.
Let

Spattering of Nb on the outer surface of the copper substrate 41
The ringing is performed by the following mechanism. That is,
From the high frequency power source 21 to the ring-shaped target 40, the upper lid 1
0, lids 24, 25, support pipes 17, 18
When a wave voltage is applied and discharged, the ring-shaped target in the main body 1
A between the get 40 and the copper substrate 41_rThe gas is ionized and A
_rIons are generated. This A_rIons have high frequency voltage
Colliding with the inner surface of the applied ring-shaped target 40,
Particles of Nb on the surface of the target 40 are peeled off,
Particles are attached to the outer surface of the copper substrate 41, and the surface of about 3μ
Form a thin film of thickness.

In the above-mentioned sputtering process, the motor 15 is driven to rotate the rotary shaft 16 at a predetermined number of revolutions, and the upper cover 10, the covers 24 and 25 are supported together with the support pipes 17 and 1.
8 bellows 20a at a predetermined speed, 20b Yuki gradually increases the ring target 40 by contracting the, a thin film of N _b on the outer peripheral surface of uniform thickness over the entire axial length of the copper substrate 41 formed Can be membrane.

During the sputtering operation, the cooling water is constantly supplied from the support pipe 17, the cooling water is caused to flow through the coil pipe to cool the periphery of the ring-shaped target 40, and the cooled water is outside the support pipe 18. The ring-shaped target 40 is prevented from being heated.
Further, by constantly applying a magnetic field with the permanent magnet 42, the ino-ionized particles of A _r are attracted by the magnetic field so as to concentrate between the ring-shaped target 40 and the copper substrate 41, and the A _r around this part is attracted. It acts to increase the density and the efficiency of sputtering.

Further, the heater 26 is inserted inside the copper substrate 41, and the heater 26 is inserted during the sputtering process.
Are heated so that the temperature of the copper substrate 41 becomes about 300 ° C., and the state in which Nb easily attaches is maintained.

The target 40 of the film forming apparatus described above
As an example of specific dimensions of the copper substrate 41, the ring-shaped target 40 has an outer diameter of 180 mm and a length of about 150 mm, and the copper substrate 41 has an outer diameter of 130 mm and an inner diameter of 100 m.
It is necessary to design the main body 1 and the main body bottom plate 2 in which the target 40 and the copper substrate 41 are housed, which have a size of m and a length of about 850 mm.

FIG. 4 is a block diagram of a superconducting coaxial portion according to the second embodiment of the present invention. In the second embodiment, the ring-shaped target 40 is not vertically moved as in the first embodiment shown in FIG. 1, but the ring-shaped target 40 is fixed and the copper substrate 41 is vertically moved. The other configuration is the same as that of the first embodiment shown in FIG.

That is, in FIG. 4, the ring-shaped target 40 is supported by the support pipes 17 and 18 so that the upper lids 24a and 24a.
It is fixed to 5b and suspended. A bellows 50 is attached at the position of the hole 2a at the center of the main body bottom plate 2,
A board mounting plate 57 having an opening of substantially the same size as the opening is attached to the opening at the upper end of the bellows 50.

A rotary shaft 56 is fitted into the mounting plate 50, and a guide 52 fixed to the mounting plate 50 moves up and down along the guide rod 51, so that the mounting plate 57 is also vertically movable. The mounting plate 57 is screwed with the screw of the rotary shaft 56 and moves up and down as the rotary shaft 56 rotates. The rotary shaft 56 penetrates from the main body bottom plate 2 to the outside of the main body 1 via a rotation introducing terminal 53 that constitutes a seal portion, is connected to a motor 55, and is rotationally driven by the motor 55.

The shutter 5 is provided in the central opening of the mounting plate 57.
4 is attached, coaxial with the shutter 54, and
The copper substrate 41 is fixed inside the shutter 54. Inside the copper substrate 41, the heater 26 suspended from above is inserted and the copper substrate 41 is set.

In the apparatus according to the second embodiment having the above-mentioned structure, first, the bolt / nut 4 is removed to remove the main body bottom plate 2 of the main body 1, the copper substrate 41 is mounted on the mounting plate 57, and the heater 26 is mounted. Set in the copper substrate 41, and then the copper substrate 4
1 is arranged at the center of the ring-shaped target 40. Then, the inside of the main body 1 is evacuated in the same manner as in the first embodiment.

When the motor 55 is rotated and the rotary shaft 56 is rotated, the bellows 50 expands and contracts with respect to the main body bottom plate 2 so that the mounting plate 57 to which the copper substrate 41 is mounted can be easily moved in the vertical direction. When the plate 57 moves up and down, the mounting plate 57
The shutter 54, which is fixed to, can move up and down with respect to the ring-shaped target 40 together with the copper substrate 41.

When the operation is started, the ring-shaped target 40 is first placed around the outer periphery of the shutter 54 in a state where the inside of the main body 2 is in a vacuum state and a predetermined amount of _Ar gas is introduced, as in the first embodiment. arrangement, and a high frequency voltage is applied a predetermined time in a ring target 40, and a _r ions by ionizing the a _r discharge is generated between the shutter 54, the collision of a _r ions on the inner surface of the ring-shaped target 40 Then, the impurities on the Nb surface adhering to the inner surface are peeled and removed, and the impurities on the Nb surface are removed. Then motor 1
5 is rotated to move the mounting plate 57, the tip or base of the copper substrate 41 is placed in the ring-shaped target 40, sputtering is performed, and the motor 55 is controlled to control the copper substrate 41.
Can be lowered or raised at a predetermined speed to form a thin film of Nb having a uniform thickness over the entire axial length on the outer surface of the copper substrate 41 as in the first embodiment.

The mechanism of sputtering, the cooling of the ring-shaped target 40, the heating of the copper substrate 40, and the operation of the permanent magnet 42 are the same as those in the first embodiment described with reference to FIG. .

[0046]

The film forming apparatus for the superconducting coaxial portion of the present invention comprises:
(1) A container main body, a main body bottom plate detachable from the main body, a mount for fixing a cylindrical copper substrate fixed to the center of the main body bottom plate, and a suspension means suspended from above in the main body by a supporting means. A ring-shaped target made of niobium, which is arranged so as to be vertically movable at a predetermined distance from the periphery of the copper substrate fixed to a mounting base, and an axial direction around the copper substrate by vertically moving the supporting means. A driving means for moving the target up and down, a vacuum pump for bringing the inside of the main body into a vacuum state, and an argon gas introducing means for flowing an argon gas between the target and the outer surface of the copper substrate in the main body. A power supply for applying a high-frequency voltage is provided between the target and the copper substrate, and a thin film of niobium is continuously formed on the outer surface of the copper substrate.

[0047] With the above structure, when the high-frequency voltage from the high frequency power supply between the target and the copper substrate is applied, discharge occurs, argon is ionized by A _r gas is ionized, the ionized argon particles are applied The applied voltage collides with the inner surface of the target. Due to this collision, niobium particles peel off from the inner surface of the target and fly out, and adhere to the outer surface of the copper substrate to form a film. The niobium thin film on the outer surface of the copper substrate is formed in this way, but the driving means is controlled at a preset speed so that the thickness becomes about 3 μ, and the target is gradually raised through the supporting means. A thin film of niobium can be formed to a uniform thickness continuously over the entire length of the outer surface of the copper substrate.

In (2) of the present invention, the target is fixed and the copper substrate is moved up and down instead of the method of moving the target up and down as in the invention of (1). The copper substrate is fixed to the mounting plate, and the mounting plate is moved up and down by controlling the driving means. Therefore, in the copper substrate, the tip or the base is first inserted into the target, a high-frequency voltage is applied between the target and the copper substrate, and the copper substrate is gradually lowered or raised. Similarly, a thin film of niobium can be formed uniformly over the entire length of the copper substrate.

In (3) of the present invention, a permanent magnet is disposed around the target, a magnetic field formed by the permanent magnet is generated between the target and the copper substrate, and ionized argon is generated by the magnetic field. Since the density of argon ions is increased by concentrating with the copper substrate, the efficiency of niobium film formation is increased.

In (4) of the present invention, the shutter is attached to the upper part of the main body, and the target is moved to the uppermost portion at the start of sputtering to insert the shutter into the target. When a high-frequency voltage is applied between the target and the shutter in this state, a discharge occurs, the argon gas is ionized and ionized, and collides with the inner surface of the target, so the impurities adhering to the inner surface of the target peel off. Since the niobium surface is exposed, the inner surface of the target of the invention (1) can be cleaned before the operation.

In (5) of the present invention, since the heater is inserted inside the copper substrate, the copper substrate is heated to about 300 degrees, and niobium is effectively attached to the copper substrate.

In (6) of the present invention, the shutter is attached to the attachment plate, and the attachment plate is moved at the start of sputtering to insert the shutter into the inside of the target.
When a high-frequency voltage is applied between the target and the shutter in this state, a discharge occurs, the argon gas is ionized and ionized, and collides with the inner surface of the target, so the impurities adhering to the inner peripheral surface of the target peel off. Since the niobium surface is exposed by the above, it is possible to clean the inner surface of the target of the invention of the above (2) before the operation.

In (7) of the present invention, the above (1) and (2)
It is a superconducting coaxial part manufactured by the film forming apparatus of the present invention, which is cheaper and cooling efficiency by forming niobium on the outer surface of the copper substrate as compared with the conventional case where niobium is processed to manufacture the coaxial part. A good superconducting coaxial portion can be easily manufactured.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram of a superconducting coaxial portion film forming apparatus according to a first embodiment of the present invention.

FIG. 2 is a view on arrow AA in FIG.

FIG. 3 is a diagram showing a positional relationship between a shutter and a ring-shaped target in the film forming apparatus according to the first embodiment of the present invention.

FIG. 4 is a configuration diagram of a main portion in a superconducting coaxial portion film forming apparatus according to a second embodiment of the present invention.

[Explanation of symbols]

1 Main body 2 Main body bottom plate 3 Flange 5 Vacuum sensor 6 Board mounting base 6a Holes 7a, 7b Cylindrical member 8 Mounting material 9, 13 Insulator 10 Upper lid 11 Lower lid 12a, 12b Flange 14, 54 Shutter 15,55 Motor 16,56 Rotation Shaft 17, 18 Support pipe 19 Coil-shaped pipes 20a, 20b, 50 Bellows 21 High frequency power source 22 Matching machine 24, 24a, 25, 25a Lid 26 Heater 31 Turbo molecular pump 32 Ion pump 33 Gate valve 34 Orifice 35 Connection part 36 L type Valve 37 _Ar Introducing tube 40 Ring-shaped target 41 Copper substrate 42 Permanent magnet 51 Guide rod 52 Guide 53 Rotating shaft introducing terminal 57 Mounting plate

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2G085 BA05 EA02 EA04                 4K029 AA02 AA27 BA02 BD03 CA05                       DC03 DC13 DC25 DC40

Claims (7)

[Claims] 1. A container main body, a main body bottom plate detachable from the main body, a mount for mounting a cylindrical copper substrate fixed to the center of the main body bottom plate, and a suspension means suspended from above in the main body by a supporting means. A ring-shaped target made of niobium, which is vertically movably arranged at a predetermined distance from the periphery of the copper substrate fixed to the mounting table, and the support means is vertically moved to move around the copper substrate. Driving means for moving the target up and down in the axial direction, a vacuum pump for bringing the inside of the main body into a vacuum state, and an argon gas introduction for flowing an argon gas between the target and the outer surface of the copper substrate in the main body Means and a power supply for applying a high frequency voltage between the target and the copper substrate, and a niobium thin film is continuously formed on the outer surface of the copper substrate. Place 2. A container main body, a main body bottom plate that is attachable to and detachable from the main body, a mounting plate that is vertically movably arranged in the center of the main body bottom plate and that mounts a cylindrical copper substrate, and is supported from above inside the main body. A ring-shaped target made of niobium, which is suspended by means of means and fixed to the periphery of the copper substrate at a predetermined distance from the periphery of the copper substrate; driving means for moving the mounting plate up and down; A vacuum pump for making a vacuum state, an argon gas introducing means for flowing an argon gas between the target and the outer surface of the copper substrate in the main body, and a high frequency voltage is applied between the target and the copper substrate. A superconducting coaxial portion film-forming apparatus, characterized in that a thin film of niobium is continuously formed on the outer surface of the copper substrate. 3. A permanent magnet is arranged around the ring-shaped target.
The superconducting coaxial portion film forming apparatus described. 4. A shutter, which is coaxial with the target and is arranged at a predetermined distance from the periphery of the target when the target is elevated, is attached to an upper portion of the main body, and the shutter is provided between the target and the shutter at an initial stage of driving. The superconducting coaxial portion film forming apparatus according to claim 1, wherein a high frequency voltage is applied to the target to remove impurities on the inner surface of the target. 5. The superconducting coaxial portion film forming apparatus according to claim 1, wherein a heater to be inserted into the copper substrate is suspended and attached to the upper portion of the main body. 6. A shutter, which is coaxial with the target and is arranged at a predetermined distance from the periphery of the target when the target rises, is mounted on the mounting plate, and a high frequency wave is provided between the target and the shutter in the initial stage of driving. The superconducting coaxial portion film forming apparatus according to claim 2, wherein a voltage is applied to remove impurities on the inner surface of the target. 7. A superconducting coaxial component manufactured by the film forming apparatus according to claim 1.