JP2003037212A - Circuit device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of unestablished manufacturing method for manufacturing high quantity small and thin circuit devices with its circuit elements mounted on a support substrate, such as a ceramic substrate, a flexible sheet. SOLUTION: The circuit device comprising a first plurality of conductive patterns 51 of each mounting section electrically isolated by an isolation groove 61, a thermosetting resin layer 50A for filling the isolation groove 61 and covering the surface of the first conductive patterns 51, a second conductive pattern 71 arranged on the thermosetting resin layer 50A, an insulation resin 50B for covering a circuit element 52 and coupling with the thermosetting resin layer 50A and is capable of improving adhesive strength between the isolation groove 61, and the thermosetting resin layer 50A and the insulation resin 50B, and disposing a multilevel interconnection beneath the circuit element 52 with the first and second conductive patterns 51 and 71, is realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit device and a method for manufacturing the same, and more particularly to a thin circuit device which does not require a supporting substrate and has enhanced adhesive strength with an insulating resin layer for sealing, and a method for manufacturing the same. is there.

[0002]

2. Description of the Related Art Conventionally, a circuit device set in an electronic apparatus has been used in a mobile phone, a portable computer, etc., and thus has been required to be small, thin and lightweight.

For example, when a semiconductor device is taken as an example of a circuit device, there is a package type semiconductor device sealed by a conventional transfer mold as a general semiconductor device. This semiconductor device is mounted on a printed circuit board PS as shown in FIG.

Further, in this package type semiconductor device, the periphery of the semiconductor chip 2 is covered with a resin layer 3, and lead terminals 4 for external connection are led out from the side portions of the resin layer 3.

However, this package type semiconductor device 1 is
Since the lead terminal 4 is out of the resin layer 3, the overall size is large, and the reduction in size, thickness, and weight are not satisfied.

[0006] Therefore, each company has developed various structures in order to competitively realize downsizing, thinning, and weight reduction, and recently, a wafer scale CSP called a CSP (chip size package), which is equivalent to a chip size, Alternatively, a CSP having a size slightly larger than the chip size has been developed.

FIG. 17 shows a CS having a glass epoxy substrate 5 as a supporting substrate and slightly larger than the chip size.
It shows P6. Here, glass epoxy substrate 5
The description will be made assuming that the transistor chip T is mounted on.

A first electrode 7, a second electrode 8 and a die pad 9 are formed on the front surface of the glass epoxy substrate 5, and a first back surface electrode 10 and a second back surface electrode 11 are formed on the back surface.
Are formed. And through the through hole TH,
The first electrode 7 and the first back surface electrode 10 are electrically connected, and the second electrode 8 and the second back surface electrode 11 are electrically connected. The bare transistor chip T is fixed to the die pad 9, and the emitter electrode of the transistor and the first electrode 7 are attached.
Are connected via the bonding wire 12, and the base electrode of the transistor and the second electrode 8 are connected via the bonding wire 12. Further, a resin layer 13 is formed on the glass epoxy substrate 5 so as to cover the transistor chip T.
Is provided.

The CSP 6 adopts the glass epoxy substrate 5, but unlike the wafer scale CSP, it has a simple structure of extending from the chip T to the backside electrodes 10 and 11 for external connection, and has an advantage that it can be manufactured at low cost. Have.

The CSP 6 is mounted on a printed circuit board PS as shown in FIG. The printed circuit board PS has
The CSP is provided with electrodes and wiring that form an electric circuit.
6, the package type semiconductor device 1, the chip resistor CR, the chip capacitor CC, etc. are electrically connected and fixed.

The circuit composed of this printed circuit board is mounted in various sets.

Next, a method of manufacturing this CSP will be described with reference to FIGS. 18 and 19.

First, a glass epoxy substrate 5 is prepared as a base material (supporting substrate), and C is formed on both surfaces of the glass epoxy substrate 5 via an insulating adhesive.
The u foils 20 and 21 are pressure bonded. (See FIG. 18A above) Subsequently, the first electrode 7, the second electrode 8, the die pad 9,
The Cu foils 20 and 21 corresponding to the first back surface electrode 10 and the second back surface electrode 11 are covered with an etching resistant resist 22, and the Cu foils 20 and 21 are patterned. The patterning may be performed separately for the front and back sides (see FIG. 18 above).
Next, a hole for the through hole TH is formed in the glass epoxy substrate using a drill or a laser, and the hole is plated to form the through hole TH. Due to this through hole TH, the first electrode 7 and the first back surface electrode 1
0, the second electrode 8 and the second back surface electrode 10 are electrically connected. Although not shown in the drawing, Ni plating is applied to the first electrode 7 and the second electrode 8 that will be the bonding posts, and Au will be applied to the die pad 9 that will be the die bonding post.
Plating is performed, and the transistor chip T is die-bonded.

Finally, the emitter electrode of the transistor chip T and the first electrode 7, and the base electrode of the transistor chip T and the second electrode 8 are connected via a bonding wire 12 and covered with a resin layer 13. (See FIG. 18D above) By the above manufacturing method, the CSP type electric element employing the supporting substrate 5 is completed. This manufacturing method is the same when a flexible sheet is used as the supporting substrate.

On the other hand, a manufacturing method using a ceramic substrate is shown in the flow chart of FIG. After preparing a ceramic substrate that is a supporting substrate, through holes are formed, and thereafter, a conductive paste is used to print electrodes on the front and back sides and sintering is performed. After that, the process shown in FIG.
Although it is the same as the manufacturing method of No. 8, the ceramic substrate is very brittle, and unlike a flexible sheet or a glass epoxy substrate, the ceramic substrate is easily chipped, so that there is a problem that molding using a mold cannot be performed. Therefore, the sealing resin is potted, cured, and then polished to flatten the sealing resin, and finally separated by a dicing device.

[0016]

In FIG. 17, the transistor chip T, the connecting means 7 to 12 and the resin layer 13 are formed.
Is a necessary component for electrical connection with the outside and protection of the transistor, but it was difficult to provide a circuit element that achieves downsizing, thinning, and weight saving with only these components. .

Further, the glass epoxy substrate 5 serving as the supporting substrate is essentially unnecessary as described above. However, because of the manufacturing method, since the electrodes are bonded together, they are used as a supporting substrate, and the glass epoxy substrate 5 cannot be eliminated.

Therefore, by adopting this glass epoxy substrate 5, the cost increases, and further, since the glass epoxy substrate 5 is thick, it becomes thick as a circuit element,
There were limits to miniaturization, thinning, and weight reduction.

Further, in the glass epoxy substrate and the ceramic substrate, the through hole forming step for connecting the electrodes on both sides is indispensable, and the manufacturing process becomes long, which is not suitable for mass production.

[0020]

SUMMARY OF THE INVENTION The present invention has been made in view of the many problems described above, and a plurality of first conductive patterns of each mounting portion electrically separated by a separation groove and the separation groove are provided. A thermosetting resin layer that fills and covers the surface of the first conductive pattern; a second conductive pattern that is formed on the thermosetting resin layer and that is connected to the first conductive pattern at a desired location; A circuit element which is insulated and fixed on the second conductive pattern; and an insulating resin which covers the circuit element and is bonded to the thermosetting resin layer to integrally support the first and second conductive patterns. It is characterized by having.

In the present invention, by providing the thermosetting resin layer which fills the separation groove and covers the surface of the first conductive pattern,
It is possible to realize a circuit device in which the connection with the insulating resin that covers the circuit element is strengthened, and the sealing structure is excellent in size reduction, thickness reduction, weight reduction, and multilayer, and the conventional problems can be solved.

In the manufacturing method of the present invention, a conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except at least a region to be the first conductive pattern. Forming a conductive pattern, filling the separation groove and covering the surface of the first conductive pattern with a thermosetting resin layer, and forming a second conductive pattern on the thermosetting resin layer. A step of covering the second conductive pattern with an insulating coating and selectively removing the insulating coating in a portion connecting the electrodes of the circuit element, and a step of fixing the circuit element on the insulating coating. A step of forming a connecting means for electrically connecting the electrode of the circuit element and the desired second conductive pattern; and covering the circuit element with the insulating resin by bonding with the thermosetting resin layer. Molding step and the separation groove Characterized by comprising the step of removing the conductive foil having a thickness of a portion not provided.

In this manufacturing method, since the thermosetting resin layer is embedded in the separation groove and bonded to the insulating resin, the adhesive strength between the insulating resin and the first and second conductive patterns is increased, and a good sealing structure is obtained. Therefore, the conventional problems can be solved.

Further, according to this manufacturing method, the multilayer wiring can be realized by using the first and second conductive patterns.

Further, in this manufacturing method, a large number of manufacturing steps can be provided by forming a large number of conductive patterns including circuit element mounting portions for each block.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the circuit device of the present invention The circuit device of the present invention will be described with reference to FIG.

In the circuit device according to the present invention, a plurality of first conductive patterns of each mounting portion, which are electrically separated by the separation groove, and thermosetting which fills the separation groove and covers the surface of the first conductive pattern. Conductive resin layer and a second conductive layer formed on the thermosetting resin layer and connected to the first conductive pattern at a desired position
Of the conductive pattern, the circuit element insulated and fixed on the second conductive pattern, the circuit element covering the circuit element, and being coupled with the thermosetting resin layer to integrally form the first and second conductive patterns. It is composed of a supporting insulating resin.

FIG. 1 has a first conductive pattern 51 embedded in a thermosetting resin layer 50A, and a second conductive pattern 71 provided on the thermosetting resin layer 50A.
The circuit device 53 is electrically insulated and fixed to the circuit element 52 on the second conductive pattern 51, and the insulating resin 50B combined with the thermosetting resin layer 50A supports the first conductive pattern 51. It is shown.

In this structure, the circuit element 52, the plurality of first conductive patterns 51, the second conductive pattern 71, the thermosetting resin layer 50A for embedding the first conductive pattern 51, and the insulating resin combined with the thermosetting resin layer 50A. A separation groove 61 filled with the thermosetting resin layer 50A is provided between the first conductive patterns 51, which is made of four materials of 50B. Then, the first conductive pattern 51 and the second conductive pattern 71 are formed by the thermosetting resin layer 50A and the insulating resin 50B.
Is supported.

Thermosetting resin layer 50A which is a feature of the present invention
For, a thermosetting resin such as an epoxy resin is used,
It is provided so as to fill the isolation trench 61 and cover the surface of the first conductive pattern 51. This thermosetting resin layer 5
OA is formed by casting a liquid material in which a thermosetting resin is dissolved in an organic solvent, applying the liquid material to the surface of the separation groove 61 and the first conductive pattern 51, semi-curing the organic solvent to remove the solvent, and then main-curing the solvent. It Further, it is preferable to mix a filler such as silica or alumina in the thermosetting resin layer 50A to relax the coefficient of thermal expansion with the first conductive pattern 51. Generally, the coefficient of thermal expansion of epoxy resin is 50 ppm / ° C,
The thermal expansion coefficient of the above-mentioned filler-containing epoxy resin is 1
5 to 30 ppm / ° C., and the coefficient of thermal expansion of the copper forming the first conductive pattern 51 is 18 ppm / ° C.,
The thermal expansion coefficient mismatch between the epoxy resin and copper can be improved.

Since the thermosetting resin layer 50A is filled in the separation groove 61 in a liquid state, the separation groove 61 has a lower viscosity than that of the epoxy resin to be transfer-molded.
Can be closely adhered to the inner wall of, and the adhesive strength between both can be greatly increased.

Further, as the thermosetting resin layer 50A, there is also a method in which a sheet-shaped film which has been semi-cured in advance is heated and pressure-bonded to be fully cured, and is adhered to the separation groove 61 and the surface of the first conductive pattern 51 with a molten epoxy resin. Can be adopted.

As the insulating resin 50B, a thermosetting resin such as an epoxy resin or a thermoplastic resin such as polyphenylene sulfide can be used. The insulating resin is
Any resin can be used as long as it is a resin that can be hardened using a mold, a dip, or a resin that can be coated and coated. But,
Considering the bonding strength with the thermosetting resin layer 50A, the same type of resin is preferable, and thus a thermosetting resin such as an epoxy resin is used as the insulating resin 50B.

As the first conductive pattern 51, a conductive foil mainly made of Cu, a conductive foil mainly made of Al, or a conductive foil made of an alloy such as Fe-Ni can be used. Of course, other conductive materials are also possible, and in particular, a conductive material that can be etched and a conductive material that evaporates with a laser are preferable.

As the second conductive pattern 71, a conductive film in which Cu is electrolessly and electroplated and adhered to the surface of the thermosetting resin layer 50A is used, and the first conductive pattern at a location where electrical connection is required. 51 is a thermosetting resin layer 5 in advance
By selectively removing 0A, connection with the second conductive pattern can be made.

As the connecting means of the circuit element 52, a bonding wire 55 is used in the case of the face-up structure, and a conductive ball made of a brazing material, a flat conductive ball, a brazing material such as solder is used in the case of the face-down structure. These connecting means are selected depending on the type of the circuit element 52 and the mounting form of the circuit element 52.

The second conductive pattern 71 to which the bonding wire 55 or the brazing material is fixed is selectively exposed from the insulating coating 72, and the conductive coating 54 is provided on the exposed surface of the second conductive pattern 71. Has been.
Materials considered as the conductive coating 54 are Ag, A
u, Pt, Pd, or the like, for vapor deposition, sputtering,
It is covered by deposition under low vacuum or high vacuum such as CVD, plating or sintering.

The back surface electrode 56 is formed by selectively exposing the expected first conductive pattern 51, covering the other portion with a resist layer 57, and attaching a conductive material such as solder, and is provided as a protruding electrode. .

In the present circuit device, since the first conductive pattern 51 and the second conductive pattern 71 are supported by the thermosetting resin layer 50A and the insulating resin 50B, the supporting substrate is unnecessary. This configuration is a feature of the present invention. As described in the section of the related art, the conductive paths of the conventional circuit device are supported by the supporting substrate or the lead frame, and therefore, a structure which may be unnecessary is added. However, the present circuit device has a characteristic that it is thin and inexpensive because it is composed of the minimum necessary components and does not require a supporting substrate.

Further, the thermosetting resin layer 50A which covers the circuit element 52 and is filled in the separation groove 61 between the first conductive patterns 51 has an advantage of being insulated from each other.

Further, a thermosetting resin layer 50A which covers the circuit element 52, is filled in the separation groove 61 between the first conductive patterns 51, and exposes only the back surface of the first conductive pattern 51 to integrally support it. It has an insulating resin 50B.

The circuit element 52 is fixed to the insulating coating 72 covering the second conductive pattern 71 with an insulating adhesive 58, and the circuit element 52 and the second conductive pattern 71 are electrically insulated. As a result, the first conductive pattern 51 and the second conductive pattern 71 can be freely wired under the circuit element 52, and a multilayer wiring can be realized. Circuit element 52
Each electrode pad of the second conductive pattern 71 provided in the periphery.
Is connected to a conductive coating 54 serving as a bonding pad formed by a part of the above by a bonding wire 55.

The point that the back surface of the first conductive pattern 51 is exposed is one of the features of the present invention. The back surface of the conductive path can be used for connection to the outside, and the through hole TH of the conventional structure as shown in FIG. 17 can be eliminated.

Further, the present circuit device has a structure in which the front surface of the separation groove 61 and the back surface of the first conductive pattern 51 are substantially aligned with each other. This structure is a feature of the present invention, and FIG.
Since the back electrodes 10, 11 shown in FIG.
It has a feature that the circuit device 53 can be horizontally moved as it is.

As another embodiment, the thermosetting resin layer 5 is used.
A UV curable resin may be used instead of 0A. That is, when the UV curable resin is applied with a vacuum laminator, and then UV irradiation, development and main curing are performed, the UV curable resin is formed so as to cover desired surfaces of the separation groove 61 and the first conductive pattern 51. You can The UV curable resin is also an epoxy resin, and the same effect as that of the thermosetting resin layer 50A can be obtained. Embodiment of Method for Manufacturing Circuit Device of Present Invention First, a method for manufacturing a circuit device of the present invention will be described with reference to FIG.

According to the present invention, a conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil in a region except at least the first conductive pattern where a large number of circuit element mounting portions are formed. Forming a first conductive pattern,
A step of coating the separation groove and the first conductive pattern with a thermosetting resin, a step of exposing a predetermined first conductive pattern surface by laser etching, and a step of contacting the exposed first conductive pattern with a thermosetting resin. A conductive film is formed on the surface of the resin layer by Cu plating, and the second conductive film is etched into a predetermined pattern.
Forming a conductive pattern, and forming a conductive film selectively on the exposed second conductive pattern;
A step of fixing the circuit element on the insulating coating covering the conductive pattern, a step of forming a connecting means for electrically connecting the electrode of the circuit element and the desired second conductive pattern, and A step of collectively covering the circuit elements and common-molding with an insulating resin; a step of removing the conductive foil in a thickness portion where the separation groove is not provided; A step of contacting and adhering to the adhesive sheet; a step of measuring characteristics of the circuit element of each mounting portion of the block in a state of being adhered to the adhesive sheet; and a state of adhering to the adhesive sheet And the step of separating the insulating resin of the block by dicing for each mounting portion.

Although the flow shown in FIG. 2 does not correspond to the above-mentioned process, the first conductive pattern is formed by two flows of Cu foil and half etching. The flow of the thermosetting resin covers the separation groove and the surface of the first conductive pattern with the thermosetting resin. Laser etching, Cu plating,
The second conductive pattern is formed by the etching flow. In Au plating, bonding pads are selectively provided on the second conductive pattern. The circuit element is fixed to each mounting portion and the electrode of the circuit element and the second conductive pattern are connected by two flows of die bonding and wire bonding. In the transfer molding flow, common molding is performed using an insulating resin. In the flow of removing the Cu foil on the back surface, the conductive foil in the thickness portion without the separation groove is etched. In the backside processing flow, the first exposed on the backside
Electrode treatment of the conductive pattern is performed. In the flow of the adhesive sheet, a plurality of blocks are attached to the adhesive sheet. In the measurement flow, the non-defective products and the characteristic ranks of the circuit elements incorporated in each mounting portion are determined. In the dicing flow, the insulating resin is separated into individual circuit elements by dicing.

The steps of the present invention will be described below with reference to FIGS.
~ It demonstrates with reference to FIG.

In the first step of the present invention, as shown in FIGS. 3 to 5, a conductive foil 60 is prepared, and at least the circuit element 5 is prepared.
The first conductive pattern 5 for each block is formed by forming a separation groove 61 shallower than the thickness of the conductive foil 60 in the conductive foil 60 in the region excluding the first conductive pattern 51 in which a large number of mounting parts of 2 are formed.
To form 1.

In this step, first, as shown in FIG. 3A, a sheet-shaped conductive foil 60 is prepared. The material of the conductive foil 60 is selected in consideration of the adhesiveness, the bonding property, and the plating property of the brazing material, and the material is a conductive foil containing Cu as a main material, a conductive foil containing Al as a main material, or Fe. -A conductive foil or the like made of an alloy such as Ni is adopted.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of later etching.
A 25 μm copper foil was adopted. However, it is basically good if it is 300 μm or more or 10 μm or less. As described later, it suffices if the separation groove 61 that is shallower than the thickness of the conductive foil 60 can be formed.

The sheet-shaped conductive foil 60 has a predetermined width,
For example, it may be prepared by being rolled into a roll of 45 mm and conveyed to each step described below, or a strip-shaped conductive foil 60 cut into a predetermined size may be prepared and conveyed to each step described below. May be.

Specifically, as shown in FIG. 3B, 4 to 5 blocks 62 each having a large number of mounting portions are formed on a strip-shaped conductive foil 60 so as to be spaced apart from each other. Slits 63 are provided between the blocks 62 to absorb the stress of the conductive foil 60 generated by the heat treatment in the molding process or the like. In addition, the conductive foil 60
Index holes 64 are provided at the upper and lower peripheral ends at a constant interval and are used for positioning in each step.

Subsequently, the first conductive pattern 51 for each block is formed.

First, as shown in FIG. 4, a photoresist (etching-resistant mask) PR is formed on the Cu foil 60, and the photoresist is exposed so that the conductive foil 60 excluding the region to be the first conductive pattern 51 is exposed. Pattern the PR. Then, as shown in FIG. 5A, the conductive foil 60 is selectively etched through the photoresist PR.

The depth of the separation groove 61 formed by etching is, for example, 20 to 30 μm, and the side surface thereof is roughened by an oxidation treatment or a chemical polishing treatment, and has an adhesive strength with the thermosetting resin layer 50A. Is improved.

Although the side wall of the separation groove 61 is schematically shown as straight, it has a different structure depending on the removing method. For this removing step, wet etching, dry etching, laser evaporation, or dicing can be adopted. In the case of wet etching, ferric chloride or cupric chloride is mainly used as the etchant, and the conductive foil is dipped in the etchant or showered with the etchant. Since the wet etching is generally non-anisotropic, the side surface has a curved structure.

In the case of dry etching, anisotropy,
Non-anisotropic etching is possible. At present, it is said that Cu cannot be removed by reactive ion etching, but it can be removed by sputtering. Moreover, anisotropic or non-anisotropic etching can be performed depending on the sputtering conditions.

Further, in the laser, the separation groove 61 can be formed by directly applying the laser beam, and in this case, the side surface of the separation groove 61 is rather straight.

FIG. 5B shows a specific first conductive pattern 51.
Indicates. This figure corresponds to an enlargement of one of the blocks 62 shown in FIG. 3B. One of the portions painted in black is one mounting portion 65, which constitutes the first conductive pattern 51, and a large number of mounting portions 65 are arranged in a matrix of 5 rows and 10 columns in one block 62. The same first conductive pattern 51 is provided for each mounting portion 65. A frame-shaped pattern 66 is provided around each block, and an alignment mark 67 for dicing is provided inside the pattern 66 with a slight distance therebetween. The frame-shaped pattern 66 is used for fitting with a molding die, and has a function of reinforcing the insulating resin 50B after the back surface of the conductive foil 60 is etched.

The second step of the present invention is as shown in FIG.
It is to form the thermosetting resin layer 50A so as to cover the surfaces of the separation groove 61 and the first conductive pattern 51.

This step is a step characterized by the present invention,
A thermosetting resin such as an epoxy resin is used as the thermosetting resin layer 50A, and is provided so as to fill the separation groove 61 and cover the surface of the first conductive pattern 51.
The thermosetting resin layer 50A is formed by casting a liquid material in which a thermosetting resin is dissolved in an organic solvent, applying the liquid material to the surface of the separation groove 61 and the first conductive pattern 51, and heating from 80 ° C to 100 ° C. After being semi-cured to remove the organic solvent, it is heated and cured at 150 ° C. to 170 ° C. for about 1.5 hours to be fully cured. Therefore, in the semi-cured state, the thermosetting resin is in the B stage state and is not thermoset.

A filler such as silica or alumina is mixed in the thermosetting resin layer 50A to form the first conductive pattern 51.
It is better to relax the coefficient of thermal expansion with. Generally, the epoxy resin has a thermal expansion coefficient of 50 ppm / ° C., and the filler-containing epoxy resin has a thermal expansion coefficient of 15 to 30 pp.
m / ° C., and the coefficient of thermal expansion of copper forming the first conductive pattern 51 is 18 ppm / ° C., so that the mismatch in coefficient of thermal expansion between the epoxy resin and copper can be improved.

Since the thermosetting resin layer 50A is filled in the separation groove 61 in a liquid state, the separation groove 61 has a lower viscosity than that of the epoxy resin to be transfer-molded.
Can be closely adhered to the inner wall of, and the adhesive strength between both can be greatly increased. As a result, up to now, the adhesive strength was secured by the separation groove 61 of about 60 μm, but the improvement of the adhesive strength allows the separation groove 61 to have a depth of 20 to 30 μm, which is half the depth, and the first conductive pattern 51 can be formed more effectively. The advantage that fine patterns can be formed is obtained.

As another method, for the thermosetting resin layer 50A, a sheet-shaped thermosetting resin film which has been semi-cured in advance is thermocompression-bonded to be fully cured, and the separation groove 6 is made of molten epoxy resin.
A method of adhering to the surfaces of the first and first conductive patterns 51 can also be adopted. Cover the surface of the thermosetting resin film with cushion paper and press-fit at 100 kg per cm ² to
The epoxy resin melted by heating at 50 ° C. to 170 ° C. is main-cured with the surface of the separation groove 61 and the surface of the first conductive pattern 51 covered.

In this step, the inner wall of the separation groove 61 is oxidized in order to increase the adhesive strength between the separation groove 61 and the thermosetting resin layer 50A, or the separation groove 61 is formed by using an organic acid-based etching treatment liquid. It is advisable to chemically polish the wall surface of to roughen. CZ-8100 manufactured by MEC Co., Ltd. is used as the organic acid-based etching solution, and the surface is dipped in this etching solution for several minutes to form irregularities of about 1 to 2 μm. As a result, the inner wall surface of the separation groove 61 is roughened, so that the separation groove 6
1 and the thermosetting resin layer 50A can be increased in adhesive strength.

In this step, as another embodiment, a UV curable resin can be used instead of the thermosetting resin layer 50A. That is, when the UV curable resin is applied with a vacuum laminator, and then UV irradiation, development and main curing are performed, the UV curable resin is formed so as to cover desired surfaces of the separation groove 61 and the first conductive pattern 51. You can In this case, since the following third step is performed together, the step is simplified.

The third step of the present invention is as shown in FIG.
Thermosetting resin layer 5 on desired surface of first conductive pattern 51
0A is removed by laser etching to be exposed, and a conductive plating film 74 for forming the second conductive pattern 71 is attached.

In this step, the thermosetting resin layer 50A is selectively removed by laser etching by direct writing, and a through hole 73 is provided in the first conductive pattern 51 to selectively expose it. A carbon dioxide laser is preferable as the laser, but an excimer laser or a YAG laser can also be used. Further, after the insulating resin is evaporated by the laser, if there is a residue on the bottom of the opening, it is removed by wet etching with sodium permanganate or ammonium persulfate or the like or dry etching with an excimer laser or the like.

Similarly, as shown in FIG. 7, the through hole 7
3 and the surface of the thermosetting resin layer 50A, a conductive plating film 74 is formed.
To form.

A conductive plating film 74 is formed on the entire surface of the thermosetting resin layer 50A including the through holes 73 without using a mask. The conductive plating film 74 is formed by both electroless plating and electrolytic plating. Here, Cu of about 2 μm is formed by electroless plating.
Are formed on the entire surface of the thermosetting resin layer 50A including at least the through holes 73. As a result, the conductive plating film 74 and the first conductive pattern 51 are electrically connected to each other. Therefore, electrolytic plating is performed using the first conductive pattern 51 connected by the conductive foil 60 as an electrode, and Cu of about 20 μm is plated. . As a result, the through hole 73 is filled with the Cu conductive plating film 74. Although Cu is used here as the conductive plating film 74, Au, Ag, Pd, or the like may be used. Alternatively, a mask may be used for partial plating.

The fourth step of the present invention is as shown in FIG.
This is to form the second conductive pattern 71 by etching the conductive plating film 74 into a desired pattern.

A photoresist layer having a desired pattern is coated on the conductive plating film 74, and a conductive film 54 to be a bonding pad and a second conductive pattern 71 extending from the bonding pad to the center are formed by chemical etching. Since the conductive plating film 74 is mainly composed of Cu, the etching solution may be ferric chloride or cupric chloride. A specific pattern will be described later with reference to FIG.

Since the conductive plating film 74 has a thickness of about 5 to 20 μm, the second conductive pattern 71 has a thickness of 2 μm.
There is an advantage that a fine pattern of 0 μm or less can be formed.

The fifth step of the present invention is as shown in FIG.
A conductive film 54 is formed on the exposed second conductive pattern 71.

The second conductive pattern 71 is covered with an insulating coating 75 such as overcoat resin. As the insulating coating 75, an epoxy resin dissolved in a solvent may be attached by screen printing and heat cured. A method in which a photo solder resist is used as the insulating coating 75 and exposure and development are performed to selectively leave it is also possible.

Next, the second conductive pattern 71 is selectively masked with a photoresist layer except the portion to serve as the bonding pad, and the insulating coating 75 is selectively removed by laser etching to selectively remove the second conductive pattern 71. Expose. A carbon dioxide laser is preferable as the laser, but an excimer laser or a YAG laser can also be used. Further, after the insulating resin is evaporated by the laser, if there is a residue on the bottom of the opening, it is removed by wet etching with sodium permanganate or ammonium persulfate or the like or dry etching with an excimer laser or the like.

The conductive coating 54 is the remaining insulating coating 75.
Is used as a mask, gold, silver or palladium is deposited by electric field or electroless plating, and is used as a bonding pad.

For example, the silver coating adheres to the gold wire and also to the brazing material. Further, since the Au thin wire can be adhered to the silver conductive film, wire bonding is also possible. Therefore, there is an advantage that these conductive coatings 54 can be used as they are as bonding pads.

In the sixth step of the present invention, as shown in FIG. 10, the circuit element 52 is fixed on the insulating coating 75 of each mounting portion 65 with a conductive or insulating adhesive 58, and each mounting portion 65 is attached.
Of the circuit element 52 and the desired second conductive pattern 71 of
To form a connecting means for electrically connecting the and.

The circuit element 52 is a semiconductor element such as a transistor, a diode or an IC chip. Although the thickness is increased, face-down semiconductor elements such as CSP and BGA can also be mounted. Further, the circuit element 52 may be formed by stacking a plurality of IC chips or arranging them in a plane.

Here, the bare IC chip 52 is fixed onto the insulating coating 75 with an insulating adhesive 58 such as epoxy resin, and the second conductive material arranged around each electrode of the IC chip 52 and each mounting portion 65. The conductive coating 54 on the pattern 71 is connected via a bonding wire 55 fixed by ball bonding by thermocompression bonding or wedge bonding by ultrasonic waves.

In this step, a large number of second blocks are provided in each block 62.
Since the conductive pattern 71 of is integrated, the circuit element 5
There is an advantage that the fixation of 2 and wire bonding can be performed very efficiently.

In the seventh step of the present invention, as shown in FIG. 11, the circuit elements 52 of each mounting portion 63 are collectively covered and bonded to the thermosetting resin layer 50A filled in the separation groove 61. In common molding with insulating resin 50B.

In this step, as shown in FIG. 11A, since the isolation groove 61 and the plurality of conductive patterns 51 have already been covered with the thermosetting resin layer 50A in the previous step, the insulating resin 50B covers the circuit element 52. Cover and separate groove 61 and first
Thermosetting resin layer 50 left on the surface of the conductive pattern 51 of
Combined with A. It should be noted that the insulating coating 75 is interposed between the thermosetting resin layer 50A and the insulating resin 50B.
Since the insulating coating 75 is extremely thin and uses an epoxy resin or the like which is a thermosetting resin, the insulating coating 75 is familiar to each other and strong adhesive strength can be obtained. In order to realize a stronger adhesive strength, the surface of the insulating coating 75 is irradiated with UV or plasma before being molded with the insulating resin 50B, and the insulating coating 75
It is preferable to activate the polar group of the resin on the surface. Then, the thermosetting resin layer 50A and the insulating resin 50B are integrated with each other to more strongly support the first conductive pattern 51.

In the present step, when it is desired to directly bond the thermosetting resin layer 50A and the insulating resin 50B, at the same time as the etching of the insulating film 75 in the previous step, the portion where the second conductive pattern 71 does not exist is formed. The insulating coating 75 may be removed.

Further, this step can be realized by transfer molding, injection molding or dipping. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a polyimide resin or polyphenylene sulfide can be realized by injection molding.

Further, at the time of transfer molding or injection molding in this step, as shown in FIG. 11B, each block 62 accommodates the mounting portion 63 in one common molding die, and one insulating resin is provided for each block. Molding is commonly performed at 50B. Therefore, compared to the conventional method of individually molding each mounting portion such as transfer molding, the amount of resin can be significantly reduced, and the molding die can be shared.

Insulating resin 5 coated on the surface of the conductive foil 60
The thickness of 0B is about 100 μm from the top of the circuit element 52.
The degree is adjusted to be covered. This thickness is
It can be made thicker or thinner in consideration of strength.

The feature of this step is that the conductive foil 60, which becomes the first conductive pattern 51 until the insulating resin 50B is covered.
Is to become a supporting substrate. Conventionally, as shown in FIG. 16, a support substrate 5 which is not originally required is used to form the conductive paths 7 to 7.
In the present invention, the conductive foil 60 serving as the supporting substrate is a material necessary as an electrode material. Therefore, there is a merit that the work can be done by saving the constituent materials as much as possible,
Cost reduction can also be realized.

Since the separation groove 61 is formed to be shallower than the thickness of the conductive foil, the conductive foil 60 is not individually separated as the first conductive pattern 51. Therefore, it can be handled as a sheet-shaped conductive foil 60 as a unit, and the insulating resin 50B
When it is molded, it has a feature that the work of transferring it to the mold and mounting it on the mold becomes very easy.

Similarly, as shown in FIG. 11A, the seventh step of the present invention is to remove the conductive foil 60 in the thickness portion where the separation groove 61 is not provided.

In this step, the back surface of the conductive foil 60 is chemically and / or physically removed to separate it as the conductive pattern 51. This step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the experiment, the entire surface is ground to about 100 μm by a polishing device or a grinding device to expose the thermosetting resin layer 50A from the separation groove 61. This exposed surface is shown in FIG.
In A, it is indicated by a dotted line. As a result, the first conductive patterns 51 having a thickness of about 30 μm are formed and separated. Also,
Conductive foil 60 is provided before the thermosetting resin layer 50A is exposed.
The entire surface may be wet-etched, and then the entire surface may be shaved by a polishing or grinding device to expose the thermosetting resin layer 50A. Further, the entire surface of the conductive foil 60 up to the dotted line may be wet-etched to expose the thermosetting resin layer 50A.

As a result, the back surface of the first conductive pattern 51 is exposed in the thermosetting resin layer 50A. That is, the surface of the thermosetting resin layer 50 </ b> A filled in the separation groove 61 and the surface of the first conductive pattern 51 have substantially the same structure. Therefore, since the circuit device 53 of the present invention does not have a step unlike the conventional back electrodes 10 and 11 shown in FIG. 18, it has a characteristic that it can be horizontally moved as it is by the surface tension of solder or the like during mounting and self-aligned. Have.

Further, the back surface of the first conductive pattern 51 is processed to obtain the final structure shown in FIG. That is, the first conductive pattern 51 forming an electrode is selectively exposed and the other part is covered with a resist layer 57, and a back surface electrode 56 is formed by applying a conductive material such as solder to form a back surface electrode 56. Complete.

The eighth step of the present invention is, as shown in FIG. 12, to attach a plurality of blocks 62 to the adhesive sheet 80 by bringing the insulating resin 50B into contact.

After the back surface of the conductive foil 60 is etched in the previous step, the blocks 62 are separated from the conductive foil 60. Since this block 62 is connected to the remaining portion of the conductive foil 60 by the thermosetting resin layer 50A and the insulating resin 50B, it can be achieved by mechanically peeling it from the remaining portion of the conductive foil 60 without using a cutting die. .

In this step, the periphery of the pressure-sensitive adhesive sheet 80 is attached to a stainless steel ring-shaped metal frame 81, and four blocks 62 are provided in the central portion of the pressure-sensitive adhesive sheet 80 at intervals such that the blades do not hit during dicing. Is provided and the insulating resin 50B is abutted on and affixed. Adhesive sheet 80
Although a UV sheet (manufactured by Lintec Co., Ltd.) is used as the material, since each block 62 has mechanical strength with the insulating resin 50B, an inexpensive dicing sheet can also be used.

In the ninth step of the present invention, as shown in FIG. 12, each block 62 molded together with the thermosetting resin layer 50A and the insulating resin 50B in a state of being attached to the adhesive sheet 80 is molded. The purpose is to measure the characteristics of the circuit element 52 of each mounting portion 65.

As shown in FIG. 1, the back surface electrodes 56 are exposed on the back surface of each block 62, and the respective mounting portions 65 are arranged in the same matrix as in the formation of the conductive patterns 51. Insulating resin 50 of this conductive pattern 51
Apply the probe 68 to the back surface electrode 56 exposed from B,
Characteristic parameters and the like of the circuit element 52 of each mounting portion 65 are individually measured to determine whether they are good or bad, and defective products are marked with magnetic ink or the like.

In this step, the circuit device 53 of each mounting portion 65
Since the blocks are integrally supported by the insulating resin 50B for each block 62, they are not individually separated. Therefore, the plurality of blocks 62 attached to the adhesive sheet 80 are vacuum-sucked to the mounting table of the tester, and the blocks 6
By performing pitch feed in the vertical direction and the horizontal direction by the size of the mounting portion 65 for each 2 as shown by the arrow, the circuit devices 53 of the mounting portions 65 of the block 62 can be measured extremely quickly and in large quantities. That is, it is possible to eliminate the need for discrimination between the front and the back of the circuit device and the recognition of the electrode positions, which are conventionally required, and since a plurality of blocks 62 are processed at the same time, the measurement time can be greatly shortened.

In the tenth step of the present invention, as shown in FIG. 13, the block 6 is attached to the adhesive sheet 80.
This is to separate the second thermosetting resin layer 50A and the insulating resin 50B for each mounting portion 65 by dicing.

In this step, the plurality of blocks 62 attached to the adhesive sheet 80 are vacuum-sucked to the mounting table of the dicing device, and each mounting portion 6 is moved by the dicing blade 69.
The thermosetting resin layer 50A and the insulating resin 50B on the separation groove 61 are diced along the dicing line 70 between the five, and separated into individual circuit devices 53.

In this step, the dicing blade 69 completely cuts the thermosetting resin layer 50A and the insulating resin 50B and performs dicing with a cutting depth reaching the surface of the adhesive sheet.
The mounting portions 65 are completely separated. At the time of dicing, the alignment mark 67 provided inside the frame-shaped pattern 66 around each block previously provided in the above-described first step is recognized, and dicing is performed using this as a reference. As is well known, in dicing, after dicing all the dicing lines 70 in the vertical direction, the mounting table is rotated by 90 degrees to perform dicing in accordance with the horizontal dicing lines 70.

Further, in this step, since the dicing line 70 includes only the thermosetting resin layer 50A filled in the separation groove 61 and the insulating resin 50B bonded thereon,
The dicing blade 69 is less worn and has a feature that it can be diced to an extremely accurate outer shape without generating metal burrs.

Further, even after this step, the adhesive sheet 80 does not cause the individual circuit devices to fall apart even after the dicing.
You can work efficiently in the subsequent taping process. That is, in the circuit device integrally supported by the adhesive sheet 80, only non-defective products can be identified and stored in the storage hole of the carrier tape by separating from the adhesive sheet 80 with the suction collet. For this reason, even a minute circuit device is characterized in that it is not separated into pieces even before taping.

Although the manufacturing method of the present invention has been described in detail above, it goes without saying that the measurement can be carried out by the tester without any problem because the pressure sensitive adhesive sheet 80 is integrally supported even if the measuring step and the dicing step are reversed. However, after dicing, it is sufficient to consider that the adhesive sheet 80 bends at the time of measurement due to the support of the adhesive sheet 80.

Finally, with reference to FIG. 15, the embodied circuit device according to the manufacturing method of the present invention will be described. First, the pattern shown by the solid line is the second conductive pattern 71, and the pattern shown by the dotted line is the first conductive pattern 51. The second conductive pattern 71 is provided with a conductive coating 54 that functions as a bonding pad so as to surround the semiconductor bare chip 52, and corresponds to the semiconductor bare chip 52 having a plurality of pads arranged in two stages. The bonding pad is connected to the corresponding electrode pad 75 of the semiconductor bare chip 52 by the bonding wire 55, and a number of fine conductive second conductive patterns 71 extend from the bonding pad under the semiconductor bare chip 52.
The through holes 73 shown by black circles are connected to the first conductive pattern 51.

With such a structure, even in a semiconductor circuit element having 200 or more pads, the second conductive pattern 71 is used.
The fine pattern can be used to extend to a desired first conductive pattern 51 in a multilayer wiring structure, and the back electrode 56 provided on the first conductive pattern 51 can be connected to an external circuit. In FIG. 15, the thermosetting resin layer 50A, the insulating resin 50B, etc. are omitted for the sake of explanation.

[0111]

According to the present invention, the conductive foil itself, which is the material of the conductive pattern, functions as a supporting substrate, and the conductive foil is used as a whole until the formation of the separation groove, the mounting of the circuit element, and the deposition of the insulating resin. When supporting and separating the conductive foil as each conductive pattern, an insulating resin is used as a support substrate to function. Therefore, the circuit element, the conductive foil, and the insulating resin can be manufactured with the minimum necessary amount. As described in the conventional example, a supporting substrate is not required to originally configure a circuit device, and the cost can be reduced. In addition, a support substrate is not required, the conductive pattern is embedded in the insulating resin, and the thickness of the insulating resin and conductive foil can be adjusted. There is also.

Since the separation groove and the conductive pattern are covered with the thermosetting resin, there is an advantage that the thermosetting resin has a low viscosity and the adhesive strength with the separation groove can be increased. Furthermore, the thermosetting resin and the insulating resin are bonded to each other because they are easily bonded to each other, and the two are integrated to realize a mounting structure having a higher sealing property. Therefore, it is possible to sufficiently overcome the drawback that the thermosetting resin layer and the insulating resin are easily separated from the separation groove even though the conductive pattern has a single-sided mold structure. In addition, due to the improvement of the adhesive strength, the separation groove may have a depth of 20 to 30 μm, which is half the depth, and the advantage that the conductive pattern can be formed in a finer pattern is obtained.

Further, since the conductive pattern is covered with the thermosetting resin layer, it is possible to prevent the surface from being oxidized, and there is an advantage that the structure can realize the oxidation prevention of the copper foil surface especially when the copper foil is used.

Furthermore, since the multi-layer wiring can be realized by the first and second conductive patterns, it is possible to mount even a semiconductor chip having an extremely large number of pads, and it is possible to realize a mounting structure that does not use an expensive lead frame.

In the manufacturing method of the present invention, since the semi-cured thermosetting resin layer is coated immediately after forming the conductive pattern,
There is an advantage that the separation groove can be completely filled with the liquid low-viscosity thermosetting resin and the adhesive strength between the two can be remarkably improved. Further, since the thermosetting resin layer covers the first conductive pattern immediately after the formation of the first conductive pattern, the surface of the first conductive pattern is not oxidized in the subsequent heating step such as die bonding or wire bonding, and the reliability is improved. Can contribute to.

The thermosetting resin layer can be easily and selectively removed by laser etching, and the remaining thermosetting resin layer can be used as a mask to form a second conductive pattern as a conductive plating film. The process can be simplified.

Further, when the insulating resin is filled in the conventional separating groove by transfer molding, the insulating resin cannot be sufficiently filled in the separating groove due to the high viscosity of the insulating resin. Adhesive strength was not sufficiently obtained, and there was a problem that the insulating resin was peeled off from the first conductive pattern. In the present invention, the adhesive strength between the separation groove and the thermosetting resin layer is solved by using a low-viscosity semi-cured thermosetting resin, and the thermosetting resin layer and the insulating resin are well compatible with each other. The adhesive strength between the first conductive pattern, the thermosetting resin layer, and the insulating resin can be significantly improved.

Furthermore, by adhering a plurality of blocks to the adhesive sheet 80, it is possible to process a minute circuit device without breaking it up to the end, and it is possible to realize a manufacturing method with extremely high mass production effect.

Further, there is an advantage that a plurality of blocks attached to the pressure-sensitive adhesive sheet can be used for processing in the measuring step and the dicing step. Therefore, in the measurement process, a large amount of circuit devices on each mounting part of the block can be measured very quickly, and it is not necessary to distinguish the front and back of the circuit device and recognize the electrode positions, which were required in the past. Since it can be processed in a batch, the measurement time can be greatly shortened. Further, in the dicing process, there is an advantage that the dicing line can be recognized quickly and surely by using the alignment mark. Further, dicing may be performed by cutting only the insulating resin layer, and by not cutting the conductive foil, the life of the dicing blade can be extended and metal burrs generated when cutting the conductive foil are not generated.

Further, as is apparent from FIG. 19, since the through hole forming step, the conductor printing step (in the case of a ceramic substrate) and the like can be omitted, the manufacturing process can be greatly shortened from the conventional one, and the entire process can be completed. It has the advantage of being made. In addition, no frame mold is required, and the manufacturing method is extremely short.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a circuit device of the present invention.

FIG. 2 is a diagram illustrating a manufacturing flow of the present invention.

FIG. 3 is a diagram illustrating a method of manufacturing a circuit device according to the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 6 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 7 is a diagram illustrating a method of manufacturing a circuit device according to the present invention.

FIG. 8 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 9 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 10 is a drawing for explaining the manufacturing method of the circuit device of the present invention.

FIG. 11 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 12 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 13 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 14 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 15 is a diagram illustrating a circuit device embodying the present invention.

FIG. 16 is a diagram illustrating a mounting structure of a conventional circuit device.

FIG. 17 is a diagram illustrating a conventional circuit device.

FIG. 18 is a diagram illustrating a conventional method for manufacturing a circuit device.

FIG. 19 is a diagram illustrating a conventional method for manufacturing a circuit device.

[Explanation of symbols]

50A thermosetting resin layer 50B insulating resin 51 First Conductive Pattern 52 circuit elements 53 Circuit device 61 separation groove 62 blocks 71 Second conductive pattern 80 Adhesive sheet

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Takeshi Nakamura             2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture             Within Yo Denki Co., Ltd. (72) Inventor Yoshiyuki Kobayashi             2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture             Within Yo Denki Co., Ltd. F-term (reference) 5F061 AA01 BA04 CA21 CB13

Claims (26)

[Claims] 1. A plurality of first conductive patterns of each mounting portion that are electrically separated by a separation groove, a thermosetting resin layer that fills the separation groove and covers the surface of the first conductive pattern,
A second conductive pattern formed on the thermosetting resin layer and connected to the first conductive pattern at a desired location, a circuit element insulated and fixed on the second conductive pattern, and the circuit. A circuit device, comprising: an insulating resin that covers an element and is bonded to the thermosetting resin layer to integrally support the first and second conductive patterns. 2. A plurality of first conductive patterns of each mounting portion that are electrically separated by a separation groove, and a thermosetting resin layer that fills the separation groove and covers the surface of the first conductive pattern.
A second conductive pattern formed on the thermosetting resin layer and connected to the first conductive pattern at a desired location, a circuit element insulated and fixed on the second conductive pattern, and the circuit. An insulating resin which covers the element and is bonded to the thermosetting resin layer and exposes only the back surface of the first conductive pattern to integrally support the first and second conductive patterns. Characteristic circuit device. 3. A plurality of first conductive patterns of each mounting portion that are electrically separated by a separation groove, a thermosetting resin layer that fills the separation groove and covers the surface of the first conductive pattern,
A second conductive pattern formed on the thermosetting resin layer and connected to the first conductive pattern at a desired location, a circuit element insulated and fixed on the second conductive pattern, and the circuit. Connection means for connecting the electrode of the element and the other second conductive pattern, and insulation for covering the circuit element and being combined with the thermosetting resin layer to integrally support the first and second conductive patterns. A circuit device comprising a conductive resin. 4. A plurality of first conductive patterns of each mounting portion that are electrically separated by a separation groove, a thermosetting resin layer that fills the separation groove and covers the surface of the first conductive pattern,
A second conductive pattern formed on the thermosetting resin layer and connected to the first conductive pattern at a desired location, a circuit element insulated and fixed on the second conductive pattern, and the circuit. Connection means for connecting the electrode of the element and the other second conductive pattern, and a circuit means that covers the circuit element and is connected to the thermosetting resin layer and exposes only the back surface of the first conductive pattern. A circuit device, comprising: an insulating resin that integrally supports the first and second conductive patterns. 5. The circuit device according to claim 1, wherein the first conductive pattern is made of a conductive foil of any one of copper, aluminum and iron-nickel. . 6. The thermosetting resin layer is used as an interlayer insulating film between the first conductive pattern and the second conductive pattern, according to any one of claims 1 to 4. Circuit device. 7. The conductive film made of a metal material different from that of the second conductive pattern is provided on the exposed desired second conductive pattern. The circuit device described in 1. 8. The circuit device according to claim 7, wherein the conductive film is formed of gold, silver or palladium plating. 9. The circuit device according to claim 1, wherein the circuit element is a semiconductor bare chip. 10. The method according to claim 3 or 4, wherein the connecting means comprises a bonding wire.
The circuit device described in. 11. The back surface of the first conductive pattern and the back surface of the thermosetting resin layer filling the separation groove are made substantially flat. Circuit device. 12. A conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except at least a region to be the first conductive pattern to form the first conductive pattern. A step of filling the separation groove and covering the surface of the first conductive pattern with a thermosetting resin layer; forming a second conductive pattern on the thermosetting resin layer; Covering the conductive pattern with an insulating coating, selectively removing the insulating coating of the portion connecting the electrode of the circuit element, a step of fixing the circuit element on the insulating coating, and the electrode of the circuit element Forming a connection means for electrically connecting the desired second conductive pattern, covering the circuit element, bonding with the thermosetting resin layer and molding with an insulating resin, Thickness without separation groove Method of manufacturing a circuit device characterized by comprising the step of removing the minute of the conductive foil. 13. A conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except at least a region to be the first conductive pattern to form the first conductive pattern. A step of filling the separation groove and covering the surface of the first conductive pattern with a thermosetting resin layer; forming a second conductive pattern on the thermosetting resin layer; Covering the conductive pattern with an insulating coating, selectively removing the insulating coating of the portion connecting the electrode of the circuit element, a step of fixing the circuit element on the insulating coating, and the electrode of the circuit element Forming a connection means for electrically connecting the desired second conductive pattern, covering the circuit element, bonding with the thermosetting resin layer and molding with an insulating resin, Thickness without separation groove Removing the minute of the conductive foil, a manufacturing method of a circuit device characterized by comprising the step of separating the individual circuit devices by cutting the insulating resin. 14. A conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except at least a region to be the first conductive pattern to form the first conductive pattern. A step of filling the separation groove and covering the surface of the first conductive pattern with a thermosetting resin layer; forming a second conductive pattern on the thermosetting resin layer; A step of covering the conductive pattern with an insulating coating, selectively removing the insulating coating in a portion connecting the electrodes of the circuit element, and forming a conductive coating on the exposed second conductive pattern; A step of fixing the circuit element to the step, a step of forming a connecting means for electrically connecting the electrode of the circuit element and the desired second conductive pattern, and a step of covering the circuit element with the thermosetting resin layer. Combined with insulating resin Sul process and method of the circuit, characterized by comprising the step of removing the conductive foil having a thickness of portion where no separation groove is provided apparatus. 15. A conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except at least a region to be the first conductive pattern to form the first conductive pattern. A step of filling the separation groove and covering the surface of the first conductive pattern with a thermosetting resin layer; forming a second conductive pattern on the thermosetting resin layer; Covering the conductive pattern with an insulating coating, selectively removing the insulating coating in the portion connecting the electrodes of the circuit element, a step of fixing the circuit element on the insulating coating, and the electrode of the circuit element A step of forming connection means for electrically connecting the desired second conductive pattern, a step of covering the circuit element, bonding with the thermosetting resin layer, and molding with an insulating resin; Thickness part without groove And removing the conductive foil uniformly from the back surface to make the back surface of the first conductive pattern and the thermosetting resin layer filling the separation groove into a substantially flat surface. And a method for manufacturing a circuit device. 16. A conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except at least a region to be the first conductive pattern to form the first conductive pattern. A step of filling the separation groove and covering the surface of the first conductive pattern with a thermosetting resin layer; forming a second conductive pattern on the thermosetting resin layer; Covering the conductive pattern with an insulating coating, selectively removing the insulating coating of the portion connecting the electrode of the circuit element, a step of fixing the circuit element on the insulating coating, and the electrode of the circuit element A step of forming a connecting means for electrically connecting the desired second conductive pattern, a step of covering the circuit element, combining with the thermosetting resin layer, and molding with an insulating resin; Thickness part without groove 2. A method of manufacturing a circuit device, comprising: a step of removing the conductive foil; and a step of cutting the insulating resin to separate into individual circuit devices. 17. The conductive foil is made of copper, aluminum, iron-
17. The method for manufacturing a circuit device according to claim 12, wherein the circuit device is made of any one of nickel. 18. The circuit device according to claim 12, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching. Manufacturing method. 19. The method of manufacturing a circuit device according to claim 12, wherein a semiconductor bare chip is fixed to the circuit element. 20. A conductive film made of a metal material different from that of the second conductive pattern is provided on the desired second conductive pattern exposed from the insulating film, using the insulating film as a mask. A method of manufacturing a circuit device according to any one of claims 12 to 16, which is characterized in that. 21. The method of manufacturing a circuit device according to claim 20, wherein the conductive film is formed by gold, silver or palladium plating. 22. The method according to claim 12, wherein the connecting means is formed by wire bonding.
7. The method for manufacturing the circuit device according to any one of 6 above. 23. The insulating resin according to claim 12, wherein the insulating resin is attached by transfer molding, and the thermosetting resin layer is combined with the insulating resin during transfer molding. A method for manufacturing the described circuit device. 24. The method of manufacturing a circuit device according to claim 13, wherein the insulating resin is separated into individual circuit devices by dicing. 25. The UV curable resin is used instead of the thermosetting resin layer.
The circuit device according to any one of 1. 26. The method of manufacturing a circuit device according to claim 12, wherein a UV curable resin is used instead of the thermosetting resin layer.