JP2003037123A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same

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Publication number
JP2003037123A
JP2003037123A JP2001206231A JP2001206231A JP2003037123A JP 2003037123 A JP2003037123 A JP 2003037123A JP 2001206231 A JP2001206231 A JP 2001206231A JP 2001206231 A JP2001206231 A JP 2001206231A JP 2003037123 A JP2003037123 A JP 2003037123A
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor device
material layer
lead terminal
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001206231A
Other languages
Japanese (ja)
Inventor
Atsuhiko Tanaka
敦彦 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
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Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2001206231A priority Critical patent/JP2003037123A/en
Publication of JP2003037123A publication Critical patent/JP2003037123A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a reliable, resin-sealed type semiconductor device and a method for manufacturing the same. SOLUTION: After the surface of an assembly comprising a supporting plate 12, lead terminals 13, a semiconductor device 14 and fine lead wires 15 is coated with a lubricating material layer 19, the assembly is sealed by the resin-sealing body 16. The lubricating material layer 19 consists of silicon oil, and it effectively absorbs transmission of thermal stress caused by thermal contraction or thermal expansion of the resin-sealing body 16 to the semiconductor device 14, etc.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子を樹脂
により封止した半導体装置および半導体装置の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is sealed with resin and a method for manufacturing the semiconductor device.

【０００２】[0002]

【従来の技術】半導体装置は、通常、トランジスタ、メ
モリ等の半導体素子と、半導体素子を支持する支持板
と、外部の電極と接続されるリード端子と、半導体素子
とリード端子とを電気的に接続するリード細線と、が、
樹脂封止体によって封止されて形成されている。2. Description of the Related Art A semiconductor device generally includes a semiconductor element such as a transistor and a memory, a support plate for supporting the semiconductor element, a lead terminal connected to an external electrode, and the semiconductor element and the lead terminal electrically. The thin lead wire to be connected is
It is formed by being sealed with a resin sealing body.

【０００３】樹脂封止体は、一般に、エポキシ樹脂から
構成される。一方、半導体素子、リード端子等は、金属
から構成され、その線膨張係数は、樹脂封止体のものと
は大きく異なる。線膨張係数の差異が大きいと、樹脂封
止体の熱膨張および熱収縮により、樹脂封止体と半導体
素子との接触面には大きな応力が発生する。過大な熱応
力の発生は、樹脂封止体にクラックを発生させ、また、
半導体素子上の電極を剥離させるなど、半導体装置の特
性を劣化させる。このため、樹脂封止体の線膨張係数を
低下させ、また、半導体素子と樹脂封止体との密着性を
低下させるなどして、発生する応力を低減させ、また、
半導体素子等に加わる応力を緩和する必要がある。The resin encapsulant is generally made of epoxy resin. On the other hand, the semiconductor element, the lead terminal, and the like are made of metal, and the coefficient of linear expansion thereof is significantly different from that of the resin sealing body. When the difference in linear expansion coefficient is large, a large stress is generated on the contact surface between the resin encapsulant and the semiconductor element due to thermal expansion and thermal contraction of the resin encapsulant. Excessive thermal stress causes cracks in the resin encapsulant, and
The characteristics of the semiconductor device are deteriorated, such as peeling off the electrodes on the semiconductor element. Therefore, the linear expansion coefficient of the resin encapsulant is reduced, the adhesiveness between the semiconductor element and the resin encapsulant is reduced, and the stress generated is reduced.
It is necessary to reduce the stress applied to the semiconductor element and the like.

【０００４】通常、樹脂封止体は、線膨張係数を低減す
るための種々の添加剤を含んで構成されている。例え
ば、樹脂封止体は、シリカ等の充填剤を含み、多孔度を
高めることにより線膨張係数が低減されている。しか
し、多孔度を過大に増大させると、樹脂封止体に水分が
滲入しやすくなり半導体装置の信頼性を低下させる。ま
た、エポキシ樹脂は金属に対する密着性が高く、その接
触面に発生する応力は大きく、リード線の断線等が発生
しやすい。Usually, the resin encapsulant contains various additives for reducing the linear expansion coefficient. For example, the resin encapsulant contains a filler such as silica, and has a linear expansion coefficient reduced by increasing porosity. However, if the porosity is excessively increased, water easily penetrates into the resin encapsulant, which reduces the reliability of the semiconductor device. Further, the epoxy resin has a high adhesiveness to a metal, the stress generated on the contact surface is large, and the breakage of the lead wire is likely to occur.

【０００５】このため、樹脂封止体と、その内部に封止
された半導体素子等との間に、保護樹脂層を設ける方法
が開発されている。例えば、樹脂封止体と半導体素子等
との中間の線膨張係数を有して構成された保護樹脂層
は、半導体素子の接触面に発生する応力を低減させる。
また、例えば、シリコーンラバーから構成される保護樹
脂層は、半導体素子との密着性が低く、可とう性を有す
ることから、半導体素子に加わる応力を緩和する。Therefore, a method of providing a protective resin layer between the resin encapsulant and the semiconductor element or the like encapsulated therein has been developed. For example, the protective resin layer configured to have an intermediate linear expansion coefficient between the resin encapsulant and the semiconductor element reduces stress generated on the contact surface of the semiconductor element.
Further, for example, the protective resin layer made of silicone rubber has low adhesiveness to the semiconductor element and has flexibility, and therefore relaxes the stress applied to the semiconductor element.

【０００６】[0006]

【発明が解決しようとする課題】しかし、上記のような
保護樹脂層を設ける場合、小型または薄型の半導体素子
には、その表面に所望の応力緩和効果が得られる厚さ
（０．７〜１．０ｍｍ程度）の保護樹脂層を被覆するこ
とが難しい場合がある。保護樹脂層による被覆が十分で
ない場合には、被覆されていない部分で樹脂封止体のク
ラックが発生する等により半導体装置の信頼性が低下す
る。However, when the protective resin layer as described above is provided, a small or thin semiconductor element has a thickness (0.7 to 1) at which a desired stress relaxation effect can be obtained on the surface thereof. It may be difficult to coat a protective resin layer having a thickness of about 0.0 mm. When the coating with the protective resin layer is not sufficient, the reliability of the semiconductor device is deteriorated due to cracking of the resin sealing body in the uncoated portion.

【０００７】上記事情を鑑みて、本発明は、信頼性の高
い、樹脂封止型の半導体装置および半導体装置の製造方
法を提供することを目的とする。In view of the above circumstances, it is an object of the present invention to provide a highly reliable resin-sealed semiconductor device and a method of manufacturing a semiconductor device.

【０００８】[0008]

【課題を解決するための手段】上記目的を達成するた
め、本発明の第１の観点にかかる半導体装置は、半導体
素子と、前記半導体素子を支持する支持部材と、前記半
導体素子に電気的に接続され、外部電極と接続可能なリ
ード端子と、前記半導体素子および前記リード端子の表
面を被覆する潤滑性材料層と、前記潤滑性材料層に被覆
された前記半導体素子および前記リード端子の表面を、
前記リード端子の前記外部電極と接続される部分を残し
て被覆する樹脂層と、を備えたことを特徴とする。In order to achieve the above-mentioned object, a semiconductor device according to a first aspect of the present invention is a semiconductor device, a support member for supporting the semiconductor device, and an electrically connected semiconductor device. A lead terminal that is connected and that can be connected to an external electrode; a lubricating material layer that covers the surfaces of the semiconductor element and the lead terminal; and a surface of the semiconductor element and the lead terminal that are covered with the lubricating material layer. ,
And a resin layer that covers the lead terminal except a portion connected to the external electrode.

【０００９】上記構成では、樹脂層と、樹脂層に被覆
（封止）される半導体素子、支持部材およびリード端子
との接触界面には、潤滑性材料層が設けられている。潤
滑性材料層は、樹脂層と半導体装置等の表面とを潤滑す
る。これにより、樹脂層が熱収縮または熱膨張した場合
には、潤滑性材料層の潤滑効果により互いの接触界面に
は微小なスライドが発生し、半導体素子等に伝達される
応力は緩和される。従って、封止樹脂層の熱応力による
半導体素子等の劣化は防止され、信頼性の高い半導体装
置が提供される。In the above structure, the lubricating material layer is provided at the contact interface between the resin layer and the semiconductor element covered (sealed) by the resin layer, the supporting member and the lead terminal. The lubricious material layer lubricates the resin layer and the surface of the semiconductor device or the like. As a result, when the resin layer is thermally contracted or thermally expanded, the lubrication effect of the lubricous material layer causes minute slides to occur at the contact interface with each other, and the stress transmitted to the semiconductor element or the like is relaxed. Therefore, deterioration of the semiconductor element and the like due to the thermal stress of the sealing resin layer is prevented, and a highly reliable semiconductor device is provided.

【００１０】上記構成において、例えば、前記半導体装
置は、さらに、前記半導体素子と前記リード端子とを接
続し、前記潤滑性材料層と前記樹脂層とにより被覆され
たリード線を備え、前記リード線は、棒状の金属部材か
ら構成される。このように、通常の線状のリード線では
なく、棒状のリード線とすることにより、熱応力発生時
の微小なスライドによるリード線の断線は防止される。In the above structure, for example, the semiconductor device further includes a lead wire that connects the semiconductor element and the lead terminal and is covered with the lubricous material layer and the resin layer. Is composed of a rod-shaped metal member. As described above, by using the rod-shaped lead wire instead of the normal linear lead wire, breakage of the lead wire due to minute slide when thermal stress occurs can be prevented.

【００１１】上記構成において、前記潤滑性材料層は、
潤滑油から構成されることが望ましい。前記潤滑油は、
例えば、シリコーンオイルから構成される。このよう
に、潤滑性材料層をオイル（潤滑油）から構成すること
により、半導体素子等の表面には撥水性が付与され、半
導体装置の耐水性が高められる。In the above structure, the lubricating material layer is
It is preferably composed of lubricating oil. The lubricating oil is
For example, it is composed of silicone oil. As described above, by forming the lubricative material layer from oil (lubricating oil), water repellency is imparted to the surface of the semiconductor element or the like, and the water resistance of the semiconductor device is enhanced.

【００１２】上記構成において、前記潤滑性材料層の厚
さは、１０μｍ以上２００μｍ以下であることが好まし
い。潤滑性樹脂層は、リード端子の表面全体を被覆して
いる。潤滑性樹脂層は、上記厚さの薄膜に形成されてい
るので、リード端子を外部電極と接続する場合に良好な
はんだ被覆性が得られる。In the above structure, the thickness of the lubricating material layer is preferably 10 μm or more and 200 μm or less. The lubricating resin layer covers the entire surface of the lead terminal. Since the lubricating resin layer is formed in the thin film having the above thickness, good solder coverage can be obtained when connecting the lead terminal to the external electrode.

【００１３】上記目的を達成するため、本発明の第２の
観点にかかる半導体装置の製造方法は、半導体素子と、
前記半導体素子を支持する支持部材と、前記半導体素子
に電気的に接続され、外部電極と接続可能なリード端子
と、を備えた半導体装置の製造方法であって、前記半導
体素子および前記リード端子の表面を、潤滑性材料層で
被覆する第１の被覆工程と、前記潤滑性材料層に被覆さ
れた前記半導体素子および前記リード端子の表面を、前
記リード端子の前記外部電極と接続される部分を残して
樹脂層で被覆する第２の被覆工程と、を備えたことを特
徴とする。In order to achieve the above object, a method of manufacturing a semiconductor device according to a second aspect of the present invention comprises a semiconductor element,
A method of manufacturing a semiconductor device, comprising: a supporting member that supports the semiconductor element; and a lead terminal that is electrically connected to the semiconductor element and that can be connected to an external electrode. A first coating step of coating the surface with a lubricious material layer; and a surface of the semiconductor element and the lead terminal coated with the lubricous material layer, a portion of the lead terminal connected to the external electrode. And a second coating step of coating with a resin layer remaining.

【００１４】上記構成の方法では、樹脂層と、樹脂層に
被覆（封止）される半導体素子、支持部材およびリード
端子との接触界面には、潤滑性材料層が設ける。潤滑性
材料層は、樹脂層と半導体装置等の表面とを潤滑する。
これにより、樹脂層が熱収縮または熱膨張した場合に
は、潤滑性材料層の潤滑効果により互いの接触界面には
微小なスライドが発生し、半導体素子等に伝達される応
力は緩和される。従って、封止樹脂層の熱応力による半
導体素子等の劣化は防止され、信頼性の高い半導体装置
の製造が可能となる。In the method of the above construction, a lubricating material layer is provided at the contact interface between the resin layer and the semiconductor element covered (sealed) by the resin layer, the supporting member and the lead terminal. The lubricious material layer lubricates the resin layer and the surface of the semiconductor device or the like.
As a result, when the resin layer is thermally contracted or thermally expanded, the lubrication effect of the lubricous material layer causes minute slides to occur at the contact interface with each other, and the stress transmitted to the semiconductor element or the like is relaxed. Therefore, deterioration of the semiconductor element and the like due to the thermal stress of the sealing resin layer is prevented, and a highly reliable semiconductor device can be manufactured.

【００１５】前記第１の被覆工程は、例えば、潤滑性材
料を揮発させて、前記半導体素子および前記リード端子
の表面に付着させる付着工程を備える。また、前記付着
工程は、例えば、前記潤滑性材料と、前記半導体素子お
よび前記リード端子と、を所定の槽内に配置する工程
と、前記潤滑性材料を加熱して揮発させる工程と、を備
える。すなわち、潤滑性材料層は、例えば、高温槽内で
潤滑性材料を加熱して揮発させて、半導体素子およびリ
ード端子の表面に付着させることができる。The first coating step includes, for example, an attaching step of volatilizing a lubricating material and attaching it to the surfaces of the semiconductor element and the lead terminals. Further, the attaching step includes, for example, a step of arranging the lubricating material, the semiconductor element and the lead terminal in a predetermined tank, and a step of heating and volatilizing the lubricating material. . That is, the lubricious material layer can be attached to the surfaces of the semiconductor element and the lead terminal by heating and evaporating the lubricative material in a high temperature tank, for example.

【００１６】上記構成において、前記潤滑性材料層は、
潤滑油から構成されることが望ましい。前記潤滑油は、
例えば、シリコーンオイルから構成される。このよう
に、潤滑性材料層をオイル（潤滑油）から構成すること
により、半導体素子等の表面には撥水性が付与され、半
導体装置の耐水性が高められる。In the above structure, the lubricating material layer is
It is preferably composed of lubricating oil. The lubricating oil is
For example, it is composed of silicone oil. As described above, by forming the lubricative material layer from oil (lubricating oil), water repellency is imparted to the surface of the semiconductor element or the like, and the water resistance of the semiconductor device is enhanced.

【００１７】[0017]

【発明の実施の形態】本発明の実施の形態にかかる半導
体装置について、以下図面を参照して説明する。DETAILED DESCRIPTION OF THE INVENTION A semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings.

【００１８】図１に、本発明にかかる半導体装置の構成
を示す。図１に示すように、半導体装置１１は、支持板
１２と、リード端子１３と、半導体素子１４と、リード
細線１５と、樹脂封止体１６と、から構成されている。FIG. 1 shows the configuration of a semiconductor device according to the present invention. As shown in FIG. 1, the semiconductor device 11 includes a support plate 12, lead terminals 13, a semiconductor element 14, a thin lead wire 15, and a resin sealing body 16.

【００１９】支持板１２およびリード端子１３は、銅、
銅合金等から構成される。支持板１２とリード端子１３
とは、周知のプレス加工技術によって、リードフレーム
として一体に形成されている。The support plate 12 and the lead terminals 13 are made of copper,
It is composed of copper alloy. Support plate 12 and lead terminal 13
And are integrally formed as a lead frame by a well-known press working technique.

【００２０】支持板１２は、放熱性を有する、例えば、
板状の部材から構成されている。支持板１２の一面に
は、半導体素子１４が、はんだ、接着剤等により固着さ
れる。支持板１２の側部には、リード端子１３が互いに
並行して複数配置されている。リード端子１３の１本
は、支持板１２に連結された連結リードであり、その他
は、支持板１２に連結されていない非連結リードであ
る。The support plate 12 has a heat dissipation property, for example,
It is composed of a plate-shaped member. The semiconductor element 14 is fixed to one surface of the support plate 12 with solder, an adhesive, or the like. A plurality of lead terminals 13 are arranged in parallel with each other on the side portion of the support plate 12. One of the lead terminals 13 is a connecting lead connected to the support plate 12, and the other is a non-connecting lead not connected to the support plate 12.

【００２１】半導体素子１４は、例えば、シリコン半導
体基板等に、不純物拡散やエピタキシャル成長技術によ
ってｐ型および／またはｎ型の領域が形成されたもので
あり、全体としてダイオード、トランジスタ、半導体集
積回路等を構成する。半導体素子１４の上面、すなわ
ち、支持板１２に固着されていない面には、電極が形成
されている。電極の上には、ボス１７が配置され、電極
と電気的に接続している。ボス１７は、金属からなる板
状部材から構成され、リード細線１５との接続面積を広
く確保する。The semiconductor element 14 is, for example, a silicon semiconductor substrate or the like in which p-type and / or n-type regions are formed by an impurity diffusion or epitaxial growth technique, and as a whole, a diode, a transistor, a semiconductor integrated circuit or the like is formed. Constitute. Electrodes are formed on the upper surface of the semiconductor element 14, that is, on the surface not fixed to the support plate 12. A boss 17 is arranged on the electrode and electrically connected to the electrode. The boss 17 is made of a plate-shaped member made of metal, and secures a wide connection area with the lead thin wire 15.

【００２２】リード細線１５は、棒状の金属部材からな
り、例えば、金、アルミニウム等から構成される。リー
ド細線１５は、半導体素子１４に形成された電極上のボ
ス１７と、リード端子１３の支持板１２との連結部分に
形成された幅広のボンディングパッド部１８と、の間を
架橋している。The thin lead wire 15 is made of a rod-shaped metal member, and is made of, for example, gold or aluminum. The thin lead wire 15 bridges between the boss 17 on the electrode formed on the semiconductor element 14 and the wide bonding pad portion 18 formed at the connecting portion of the lead terminal 13 with the support plate 12.

【００２３】樹脂封止体１６は、エポキシ樹脂等からな
り、周知のトランスファモールド方法によって形成され
る。樹脂封止体１６は、支持板１２と、リード端子１３
と、半導体素子１４と、リード細線１５と、からなる組
立体を被覆して封止する。ここで、支持板１２の下面
（半導体素子１４の固着されていない面）は、樹脂封止
体１６によって被覆されておらず、露出している。ま
た、リード端子１３の、リード細線１５と接続していな
い少なくとも一部は、樹脂封止体１６に被覆されておら
ず、外部端子と接続可能である。The resin sealing body 16 is made of epoxy resin or the like and is formed by a well-known transfer molding method. The resin sealing body 16 includes a support plate 12 and lead terminals 13.
The assembly including the semiconductor element 14 and the thin lead wire 15 is covered and sealed. Here, the lower surface of the support plate 12 (the surface to which the semiconductor element 14 is not fixed) is not covered with the resin sealing body 16 and is exposed. Further, at least a part of the lead terminal 13 that is not connected to the lead thin wire 15 is not covered with the resin sealing body 16 and can be connected to an external terminal.

【００２４】上記構成の樹脂封止型の半導体装置１１に
おいて、組立体の表面、すなわち、支持板１２、リード
端子１３、半導体素子１４およびリード細線１５の表面
には潤滑性材料層１９が設けられ、潤滑性材料層１９を
介して樹脂封止体１６により被覆されている。In the resin-encapsulated semiconductor device 11 having the above structure, a lubricous material layer 19 is provided on the surface of the assembly, that is, the surfaces of the support plate 12, the lead terminals 13, the semiconductor element 14 and the lead wires 15. The resin encapsulant 16 is covered via the lubricous material layer 19.

【００２５】潤滑性材料層１９は、潤滑性を有するシリ
コーンオイルから構成される。ここで、潤滑性とは、隣
接した２つの面の間を潤滑する、すなわち、２つの面の
接触を防ぎつつ摩擦を防いで互いの移動性を保つ性質を
指す。The lubricious material layer 19 is composed of silicone oil having lubricity. Here, the lubricity refers to the property of lubricating between two adjacent surfaces, that is, preventing the contact between the two surfaces while preventing friction and maintaining the mutual mobility.

【００２６】潤滑性材料層１９は、例えば、シリコーン
ラバーを加熱して、これに含有されているシリコーンオ
イル分を揮発させ、組立体の表面に付着させることによ
り形成される。The lubricious material layer 19 is formed, for example, by heating a silicone rubber to volatilize the silicone oil content contained therein and deposit it on the surface of the assembly.

【００２７】すなわち、図２に示すような、気密に保持
可能な、ヒータ２１を備えた高温槽２２を用意する。高
温槽２２内には、常温で流動性のシリコーンラバー２３
が収容された容器２４が設置されている。上記高温槽２
２内に、複数の組立体２５を保持したマガジン２６を配
置し、高温槽２２内を気密にする。その後、高温槽２２
全体を加熱して、シリコーンラバー２３中のシリコンオ
イルを揮発させる。揮発したシリコーンオイルは、高温
槽２２内に拡散し、組立体２５の表面に付着する。所定
時間後、高温槽２２内の温度を低下させ、マガジン２６
を取り出す。以上の工程により、組立体２５の表面全体
にシリコーンオイルの層が形成される。That is, as shown in FIG. 2, a high temperature tank 22 equipped with a heater 21 that can be kept airtight is prepared. In the high temperature tank 22, a silicone rubber 23 that is fluid at room temperature is used.
A container 24 in which is stored is installed. High temperature tank 2
A magazine 26 holding a plurality of assemblies 25 is arranged in the inside 2 to make the inside of the high temperature tank 22 airtight. Then, the high temperature tank 22
The whole is heated to volatilize the silicone oil in the silicone rubber 23. The volatilized silicone oil diffuses in the high temperature tank 22 and adheres to the surface of the assembly 25. After a predetermined time, the temperature in the high temperature tank 22 is lowered and the magazine 26
Take out. Through the above steps, a layer of silicone oil is formed on the entire surface of the assembly 25.

【００２８】潤滑性材料層１９は、組立体の実質的に全
体（露出表面全体）に、例えば、１０μｍ以上、望まし
くは、２０μｍ以上の厚さで設けられる。また、潤滑性
材料層１９は、外部電極とリード端子１３とのはんだの
良好な被覆が得られるよう、２００μｍ以下、望ましく
は、１００μｍ以下の厚さで設けられている。特に、潤
滑性材料層１９は、３０μｍ程度の厚さで設けられる。The lubricious material layer 19 is provided on substantially the entire assembly (entire exposed surface) to a thickness of, for example, 10 μm or more, preferably 20 μm or more. In addition, the lubricating material layer 19 is provided with a thickness of 200 μm or less, preferably 100 μm or less so that a good coating of solder on the external electrodes and the lead terminals 13 can be obtained. In particular, the lubricious material layer 19 is provided with a thickness of about 30 μm.

【００２９】潤滑性材料層１９は、樹脂封止体１６の表
面と、組立体、例えば、半導体素子１４の表面と、の間
に介在し、２つの表面を潤滑する機能を有する。すなわ
ち、潤滑性材料層１９は、樹脂封止体１６の表面と組立
体の表面との接触を防いで潤滑する。潤滑性材料層１９
の樹脂封止体１６および組立体との粘着性（密着性）は
低く、従って、樹脂封止体１６の生成する熱応力の組立
体への伝達は緩和される。The lubricating material layer 19 is interposed between the surface of the resin encapsulant 16 and the assembly, for example, the surface of the semiconductor element 14, and has a function of lubricating the two surfaces. That is, the lubricious material layer 19 prevents contact between the surface of the resin encapsulant 16 and the surface of the assembly to provide lubrication. Lubricating material layer 19
The adhesiveness (adhesion) between the resin sealing body 16 and the assembly is low, and therefore, the transfer of the thermal stress generated by the resin sealing body 16 to the assembly is alleviated.

【００３０】詳細には、樹脂封止体１６の熱収縮または
熱膨張により応力が発生した場合には、潤滑性材料層１
９の有する潤滑性により、樹脂封止体１６と潤滑性材料
層１９との界面では、微小なスライドが生じる。熱応力
を受けた潤滑性材料層１９と、組立体との界面において
も、微小なスライドが生じる。このような微小なスライ
ドにより、半導体素子１４を含む組立体への応力の伝達
は緩和される。More specifically, when stress is generated due to the thermal contraction or thermal expansion of the resin encapsulant 16, the lubricating material layer 1
Due to the lubricity that 9 has, a minute slide occurs at the interface between the resin sealing body 16 and the lubricating material layer 19. Small slides also occur at the interface between the thermally stressed lubricious material layer 19 and the assembly. Such a minute slide relieves the transmission of stress to the assembly including the semiconductor element 14.

【００３１】上記したように、潤滑性材料層１９は３０
μｍ程度の厚さで良好な応力緩和効果が得られる。一
方、樹脂封止体１６と組立体との間に、シリコーンラバ
ー等の保護樹脂層を設けて組立体に加わる応力を吸収さ
せる場合、十分な応力緩和効果を得るには、少なくとも
１ｍｍ程度の保護樹脂層の厚さが必要となる。As described above, the lubricious material layer 19 is 30
A good stress relaxation effect can be obtained with a thickness of about μm. On the other hand, when a protective resin layer such as silicone rubber is provided between the resin encapsulant 16 and the assembly to absorb the stress applied to the assembly, at least about 1 mm of protection is required to obtain a sufficient stress relaxation effect. The thickness of the resin layer is required.

【００３２】本実施の形態のように、潤滑性を利用して
応力を緩和させる潤滑性材料層１９を用いた場合には、
応力を吸収して緩和させる保護樹脂層を用いた場合と比
べ、より薄い厚さで応力緩和効果が得られる。従って、
半導体装置が小型、薄型である場合であっても、潤滑性
材料層１９で組立体全体を良好に被覆することができ、
組立体の表面全体で良好な応力緩和効果が得られる。In the case of using the lubricative material layer 19 that relieves stress by utilizing lubricity as in this embodiment,
As compared with the case where a protective resin layer that absorbs and relaxes stress is used, a stress relieving effect can be obtained with a thinner thickness. Therefore,
Even if the semiconductor device is small and thin, the entire assembly can be well covered with the lubricious material layer 19,
A good stress relief effect is obtained over the entire surface of the assembly.

【００３３】また、半導体素子１４（ボス１７）とリー
ド端子１３とを電気的に接続するリード細線１５は、棒
状の金属部材から構成されている。このように、通常線
状に形成されるリード細線１５を棒状とすることによ
り、潤滑性材料層１９の潤滑効果により樹脂封止体１６
が微小のスライドをしたときでも、リード細線１５の断
線は防止される。The thin lead wire 15 for electrically connecting the semiconductor element 14 (boss 17) and the lead terminal 13 is made of a rod-shaped metal member. As described above, by forming the lead wire 15 that is normally formed in a linear shape into a rod shape, the resin sealing body 16 is provided by the lubrication effect of the lubricating material layer 19.
Even when a small amount is slid, the lead fine wire 15 is prevented from being broken.

【００３４】以上説明したように、本発明では、半導体
装置１１を構成する半導体素子１４等と、これらを封止
する樹脂封止体１６と、の間にシリコーンオイルからな
る潤滑性材料層１９を設けている。潤滑性材料層１９
は、樹脂封止体１６と半導体素子１４等との間を潤滑
し、直接接触した場合と比べて密着性を低下させる。こ
れにより、樹脂封止体１６から発生する熱応力の、半導
体素子１４等への伝達は良好に緩和される。従って、耐
熱性等の高い、信頼性の高い樹脂封止型の半導体装置１
１が提供される。As described above, according to the present invention, the lubricous material layer 19 made of silicone oil is provided between the semiconductor element 14 and the like constituting the semiconductor device 11 and the resin encapsulant 16 encapsulating them. It is provided. Lubricating material layer 19
Reduces the adhesion between the resin encapsulant 16 and the semiconductor element 14 or the like, as compared with the case of direct contact. As a result, the transfer of the thermal stress generated from the resin encapsulant 16 to the semiconductor element 14 and the like is favorably relaxed. Therefore, a highly reliable resin-sealed semiconductor device 1 having high heat resistance and the like
1 is provided.

【００３５】また、潤滑性材料層１９は、３０μｍ程度
の厚さで十分な応力緩和効果を発揮するので、小型、薄
型の半導体装置１１を構成する際にも高い信頼性が得ら
れる。さらに、潤滑性材料層１９は、シリコーンオイル
から構成されているので、高い耐水性が得られる。Since the lubricating material layer 19 exhibits a sufficient stress relaxation effect with a thickness of about 30 μm, high reliability can be obtained even when the small and thin semiconductor device 11 is constructed. Further, since the lubricating material layer 19 is made of silicone oil, high water resistance can be obtained.

【００３６】上記実施の形態では、リード細線１５は、
棒状の部材から形成されるものとした。しかし、リード
細線１５は、周知のワイヤボンディング方法によって結
線されたワイヤであってもよい。しかし、断線等の予防
の観点から、棒状の部材から形成されることが望まし
い。In the above embodiment, the thin lead wire 15 is
It was made of a rod-shaped member. However, the thin lead wire 15 may be a wire connected by a known wire bonding method. However, from the viewpoint of preventing disconnection and the like, it is preferably formed from a rod-shaped member.

【００３７】上記実施の形態では、潤滑性材料層１９
は、シリコーンオイルから構成されるものとした。しか
し、これに限らず、樹脂封止体１６とその内部の半導体
素子１４等と間を潤滑し、半導体素子１４等への応力の
伝達を効果的に低減する材料であればどのようなもので
もよい。In the above embodiment, the lubricating material layer 19
Was composed of silicone oil. However, the material is not limited to this, and any material can be used as long as it can lubricate the resin encapsulant 16 and the semiconductor element 14 and the like inside thereof to effectively reduce the transmission of stress to the semiconductor element 14 and the like. Good.

【００３８】潤滑性材料層１９を構成する材料として
は、潤滑性と絶縁性とを備える材料が望ましく、特に、
シリコーンオイルを含む潤滑油が望ましい。潤滑油を用
いた場合、潤滑油は撥水性を備えるので、樹脂封止体１
６の内部への水分の滲入を防ぐことができ、望ましい。As the material forming the lubricative material layer 19, a material having lubricity and insulation is desirable, and in particular,
Lubricating oils including silicone oils are desirable. When the lubricating oil is used, the lubricating oil has water repellency, and therefore the resin sealing body 1
6 is desirable because it can prevent water from seeping into the inside.

【００３９】上記実施の形態では、支持板１２の裏面は
樹脂封止体１６によって封止されず、露出しているもの
とした。しかし、支持板１２の裏面を含めて封止する構
成であってもよい。なお、上記実施の形態のように支持
板１２の下面が露出した構成の方が、半導体素子１４に
加わる応力は大きく、裏面を被覆した構成においても、
同様に良好な応力緩和効果が得られることは言うまでも
ない。In the above embodiment, the back surface of the support plate 12 is not sealed by the resin sealing body 16 and is exposed. However, the configuration may be such that the back surface of the support plate 12 is sealed. The stress applied to the semiconductor element 14 is larger in the structure in which the lower surface of the support plate 12 is exposed as in the above embodiment, and even in the structure in which the back surface is covered,
It goes without saying that a good stress relaxation effect can be similarly obtained.

【００４０】また、本発明は、図３に示すような表面実
装型の半導体装置に適用することも可能である。さら
に、図４に示すような、リード端子１３が樹脂封止体１
６から同軸状に導出された半導体装置についても適用す
ることができる。The present invention can also be applied to a surface mount type semiconductor device as shown in FIG. Further, as shown in FIG.
The present invention can also be applied to a semiconductor device that is coaxially led out from 6.

【００４１】[0041]

【発明の効果】以上説明したように、本発明によれば、
信頼性の高い、樹脂封止型の半導体装置および半導体装
置の製造方法が提供される。As described above, according to the present invention,
Provided are a highly reliable resin-encapsulated semiconductor device and a method for manufacturing a semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明にかかる半導体装置の構成を示す図であ
る。FIG. 1 is a diagram showing a configuration of a semiconductor device according to the present invention.

【図２】シリコーンオイルを付着させる高温槽を示す図
である。FIG. 2 is a view showing a high temperature tank to which silicone oil is attached.

【図３】本発明にかかる半導体装置の他の構成例を示す
図である。FIG. 3 is a diagram showing another configuration example of the semiconductor device according to the present invention.

【図４】本発明にかかる半導体装置の他の構成例を示す
図である。FIG. 4 is a diagram showing another configuration example of a semiconductor device according to the present invention.

【符号の説明】[Explanation of symbols]

１１ 半導体装置 １２ 支持板 １３ リード端子 １４ 半導体素子 １５ リード細線 １６ 樹脂封止体 １７ ボス １８ ボンディングパッド部 １９ 潤滑性材料層 11 Semiconductor device 12 Support plate 13 Lead terminal 14 Semiconductor element 15 Lead fine wire 16 Resin encapsulant 17 Boss 18 Bonding pad 19 Lubricating material layer

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】半導体素子と、 前記半導体素子を支持する支持部材と、 前記半導体素子に電気的に接続され、外部電極と接続可
能なリード端子と、 前記半導体素子および前記リード端子の表面を被覆する
潤滑性材料層と、 前記潤滑性材料層に被覆された前記半導体素子および前
記リード端子の表面を、前記リード端子の前記外部電極
と接続される部分を残して被覆する樹脂層と、 を備えたことを特徴とする半導体装置。1. A semiconductor element, a supporting member for supporting the semiconductor element, a lead terminal electrically connected to the semiconductor element and connectable to an external electrode, and a surface of the semiconductor element and the lead terminal. And a resin layer that covers the surface of the semiconductor element and the lead terminal covered with the lubricant material layer, leaving a portion of the lead terminal connected to the external electrode. A semiconductor device characterized by the above. 【請求項２】さらに、前記半導体素子と前記リード端子
とを接続し、前記潤滑性材料層と前記樹脂層とにより被
覆されたリード線を備え、前記リード線は、棒状の金属
部材から構成される、ことを特徴とする請求項１に記載
の半導体装置。2. A lead wire that connects the semiconductor element and the lead terminal and is covered with the lubricating material layer and the resin layer is provided, and the lead wire is made of a rod-shaped metal member. The semiconductor device according to claim 1, wherein: 【請求項３】前記潤滑性材料層は、潤滑油から構成され
る、ことを特徴とする請求項１または２に記載の半導体
装置。3. The semiconductor device according to claim 1, wherein the lubricating material layer is made of lubricating oil. 【請求項４】前記潤滑油は、シリコーンオイルから構成
される、ことを特徴とする請求項３に記載の半導体装
置。4. The semiconductor device according to claim 3, wherein the lubricating oil is composed of silicone oil. 【請求項５】前記潤滑性材料層の厚さは、１０μｍ以上
２００μｍ以下である、ことを特徴とする請求項１乃至
４のいずれか１項に記載の半導体装置。5. The semiconductor device according to claim 1, wherein the thickness of the lubricating material layer is 10 μm or more and 200 μm or less. 【請求項６】半導体素子と、前記半導体素子を支持する
支持部材と、前記半導体素子に電気的に接続され、外部
電極と接続可能なリード端子と、を備えた半導体装置の
製造方法であって、 前記半導体素子および前記リード端子の表面を、潤滑性
材料層で被覆する第１の被覆工程と、 前記潤滑性材料層に被覆された前記半導体素子および前
記リード端子の表面を、前記リード端子の前記外部電極
と接続される部分を残して樹脂層で被覆する第２の被覆
工程と、 を備えたことを特徴とする半導体装置の製造方法。6. A method of manufacturing a semiconductor device, comprising: a semiconductor element; a supporting member for supporting the semiconductor element; and a lead terminal electrically connected to the semiconductor element and connectable to an external electrode. A first coating step of coating the surfaces of the semiconductor element and the lead terminal with a lubricious material layer, the surface of the semiconductor element and the lead terminal coated with the lubricious material layer, A second coating step of coating with a resin layer while leaving a portion connected to the external electrode, the method for manufacturing a semiconductor device. 【請求項７】前記第１の被覆工程は、潤滑性材料を揮発
させて、前記半導体素子および前記リード端子の表面に
付着させる付着工程を備える、ことを特徴とする請求項
６に記載の半導体装置の製造方法。7. The semiconductor according to claim 6, wherein the first coating step includes an attaching step of volatilizing a lubricating material to attach it to the surfaces of the semiconductor element and the lead terminal. Device manufacturing method. 【請求項８】前記付着工程は、 前記潤滑性材料と、前記半導体素子および前記リード端
子と、を所定の槽内に配置する工程と、 前記潤滑性材料を加熱して揮発させる工程と、 を備える、ことを特徴とする請求項７に記載の半導体装
置の製造方法。8. The adhering step comprises: disposing the lubricating material, the semiconductor element and the lead terminal in a predetermined bath; and heating the lubricating material to volatilize it. The method for manufacturing a semiconductor device according to claim 7, further comprising: 【請求項９】前記潤滑性材料層は、粘着性のオイル状物
質から構成される、ことを特徴とする請求項６乃至８に
記載の半導体装置の製造方法。9. The method of manufacturing a semiconductor device according to claim 6, wherein the lubricious material layer is made of an adhesive oily substance. 【請求項１０】前記潤滑性材料層は、シリコーンオイル
から構成される、ことを特徴とする請求項６乃至９に記
載の半導体装置の製造方法。10. The method of manufacturing a semiconductor device according to claim 6, wherein the lubricating material layer is made of silicone oil.
JP2001206231A 2001-05-15 2001-07-06 Semiconductor device and method for manufacturing the same Pending JP2003037123A (en)

Priority Applications (1)

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JP2001144711 2001-05-15
JP2001-144711 2001-05-15
JP2001206231A JP2003037123A (en) 2001-05-15 2001-07-06 Semiconductor device and method for manufacturing the same

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102346A (en) * 1991-10-09 1993-04-23 Nec Corp Semiconductor device sealed with resin
JPH07245325A (en) * 1994-03-07 1995-09-19 Nec Corp Resin sealed semiconductor device
JPH07273249A (en) * 1994-03-31 1995-10-20 Nec Kansai Ltd Resin mold type semiconductor device
JPH09246431A (en) * 1996-03-12 1997-09-19 Seiko Epson Corp Semiconductor device and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102346A (en) * 1991-10-09 1993-04-23 Nec Corp Semiconductor device sealed with resin
JPH07245325A (en) * 1994-03-07 1995-09-19 Nec Corp Resin sealed semiconductor device
JPH07273249A (en) * 1994-03-31 1995-10-20 Nec Kansai Ltd Resin mold type semiconductor device
JPH09246431A (en) * 1996-03-12 1997-09-19 Seiko Epson Corp Semiconductor device and its manufacturing method

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