JP2003036969A5 - - Google Patents
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- JP2003036969A5 JP2003036969A5 JP2001328011A JP2001328011A JP2003036969A5 JP 2003036969 A5 JP2003036969 A5 JP 2003036969A5 JP 2001328011 A JP2001328011 A JP 2001328011A JP 2001328011 A JP2001328011 A JP 2001328011A JP 2003036969 A5 JP2003036969 A5 JP 2003036969A5
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- light emitting
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- refractive index
- emitting region
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- 239000010410 layer Substances 0.000 claims 62
- 230000001105 regulatory effect Effects 0.000 claims 16
- 238000000149 argon plasma sintering Methods 0.000 claims 2
- 238000000605 extraction Methods 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
Claims (27)
前記発光素子中に屈折率が略1の層を有し、且つ前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の50%以下となるように規制されることを特徴とする発光素子。At least a light emitting element having a laminated structure including a light emitting layer having a light emitting region,
The light emitting element includes a layer having a refractive index of approximately 1, and a surface of the light emitting region on the layer side having a refractive index of approximately 1 and a surface of the layer having a refractive index of approximately 1 on the side of the light emitting region. A light-emitting element characterized in that the distance is regulated to be 50% or less of the peak wavelength of light.
基板上に、光反射性の第1の電極層と、前記発光領域を有する発光層と、透明な第2の電極層と、前記屈折率が略1の層とがこの順で設けられていることを特徴とする発光素子。The light emitting device according to claim 1,
On the substrate, a light-reflective first electrode layer, a light-emitting layer having the light-emitting region, a transparent second electrode layer, and a layer having a refractive index of approximately 1 are provided in this order. A light emitting element characterized by the above.
前記屈折率が略1の層の膜上に保護層が形成されていることを特徴とする発光素子。The light emitting device according to claim 2,
A light-emitting element, wherein a protective layer is formed on a film having a refractive index of about 1.
基板上に、反射層と、透明な第1の電極層と、発光領域を有する発光層と、透明な第2の電極層と、前記屈折率が略1の層とがこの順で設けられていることを特徴とする発光素子。The light emitting device according to claim 1,
On the substrate, a reflective layer, a transparent first electrode layer, a light emitting layer having a light emitting region, a transparent second electrode layer, and a layer having a refractive index of about 1 are provided in this order. A light emitting element characterized by comprising:
前記屈折率が略1の層の膜上に保護層が形成されていることを特徴とする発光素子。The light emitting device according to claim 4,
A light-emitting element, wherein a protective layer is formed on a film having a refractive index of about 1.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の30%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 1,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 30% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の30%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 2,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 30% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の30%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 3,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 30% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の30%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 4,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 30% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の30%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 5,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 30% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の20%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 1,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 20% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の20%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 2,
The distance between the surface on the layer side having the refractive index of approximately 1 in the light emitting region and the surface on the light emitting region side of the layer having the refractive index of approximately 1 is regulated to be 20% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の20%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 3,
The distance between the surface on the layer side having the refractive index of approximately 1 in the light emitting region and the surface on the light emitting region side of the layer having the refractive index of approximately 1 is regulated to be 20% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の20%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 4,
The distance between the surface on the layer side having the refractive index of approximately 1 in the light emitting region and the surface on the light emitting region side of the layer having the refractive index of approximately 1 is regulated to be 20% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の20%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 5,
The distance between the surface on the layer side having the refractive index of approximately 1 in the light emitting region and the surface on the light emitting region side of the layer having the refractive index of approximately 1 is regulated to be 20% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の10%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 1,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 10% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の10%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 2,
The distance between the surface on the layer side having a refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having a refractive index of about 1 is regulated to be 10% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の10%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 3,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 10% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の10%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 4,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 10% or less of the peak wavelength of light. A light-emitting element.
前記発光領域における前記屈折率が略1の層側の面と前記屈折率が略1の層における前記発光領域側の面との距離が、光のピーク波長の10%以下となるように規制されることを特徴とする発光素子。The light emitting device according to claim 5,
The distance between the surface on the layer side having the refractive index of about 1 in the light emitting region and the surface on the side of the light emitting region in the layer having the refractive index of about 1 is regulated to be 10% or less of the peak wavelength of light. A light-emitting element.
前記反射層と前記境界面との間の距離tが500μm以下であることを特徴とする発光素子。The light emitting device according to claim 1,
A light emitting element having a distance t between the reflective layer and the boundary surface of 500 μm or less.
前記反射層と前記境界面との間の距離tが500μm以下であることを特徴とする発光素子。The light emitting device according to claim 2,
Emitting element you wherein the distance t between the reflective layer and the boundary surface is 500μm or less.
前記反射層と前記境界面との間の距離tが500μm以下であることを特徴とする発光素子。The light emitting device according to claim 3,
A light emitting element having a distance t between the reflective layer and the boundary surface of 500 μm or less.
前記反射層と前記境界面との間の距離tが500μm以下であることを特徴とする発光素子。The light emitting device according to claim 4,
A light emitting element having a distance t between the reflective layer and the boundary surface of 500 μm or less.
前記反射層と前記境界面との間の距離tが500μm以下であることを特徴とする発光素子。The light emitting device according to claim 5,
A light emitting element having a distance t between the reflective layer and the boundary surface of 500 μm or less.
前記反射層と前記境界面との間の距離をt、前記発光素子の面内方向の任意の二点間距離のうち最も長い距離をL、前記境界面における臨界角をθ、前記発光層の屈折率をnとした場合、下記の式(1)を満たしていることを特徴とする発光素子。
t<(ncosθ/2)×L ... (1)A light emitting layer, a light extraction surface for extracting light emitted from the light emitting layer, a reflective layer provided to face the light emitting layer and reflecting light emitted from the light emitting layer, and a direction for extracting light from the light emitting layer A boundary surface whose refractive index changes from large to small, and at least the surface of the reflective layer, a portion in contact with the boundary surface, or a light scattering portion provided between the reflective layer and the light emitting layer. A light emitting device having a laminated structure,
The distance between the reflective layer and the boundary surface is t, the longest distance between any two points in the in-plane direction of the light emitting element is L, the critical angle at the boundary surface is θ, and the light emitting layer A light emitting element satisfying the following formula (1), where n is a refractive index.
t <(n cos θ / 2) × L (1)
前記反射層の一部に、光散乱部が存在していることを特徴とする発光素子。It has a laminated structure including at least a light emitting layer having a light emitting region and a reflective layer that reflects light emitted from the light emitting region, and light emitted from the light emitting region is extracted from a light extraction surface separated from the light emitting region. A light emitting device,
A light-emitting element, wherein a light scattering portion is present in a part of the reflective layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001328011A JP2003036969A (en) | 2000-10-25 | 2001-10-25 | Light emitting element, and display unit and illumination device using the same |
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JP2000-325303 | 2000-10-25 | ||
JP2000325303 | 2000-10-25 | ||
JP2001-146912 | 2001-05-16 | ||
JP2001146912 | 2001-05-16 | ||
JP2001328011A JP2003036969A (en) | 2000-10-25 | 2001-10-25 | Light emitting element, and display unit and illumination device using the same |
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JP2003036969A JP2003036969A (en) | 2003-02-07 |
JP2003036969A5 true JP2003036969A5 (en) | 2005-06-30 |
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US7829907B2 (en) | 2005-09-22 | 2010-11-09 | Panasonic Electric Works Co., Ltd. | Organic light emitting element and method of manufacturing the same |
JP2007165284A (en) | 2005-11-18 | 2007-06-28 | Seiko Instruments Inc | Electroluminescent device and display using same |
JP5265084B2 (en) * | 2006-01-31 | 2013-08-14 | エルジー ディスプレイ カンパニー リミテッド | Organic EL display |
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JPWO2011046144A1 (en) * | 2009-10-14 | 2013-03-07 | 日本ゼオン株式会社 | Organic electroluminescence light source device |
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JP6130629B2 (en) | 2012-06-21 | 2017-05-17 | ユー・ディー・シー アイルランド リミテッド | Organic electroluminescence device |
WO2016047443A1 (en) * | 2014-09-26 | 2016-03-31 | 次世代化学材料評価技術研究組合 | Light-emitting element |
JP6565338B2 (en) * | 2015-05-28 | 2019-08-28 | 凸版印刷株式会社 | Organic EL device |
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JP2991183B2 (en) * | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | Organic electroluminescence device |
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JP4279971B2 (en) * | 1999-11-10 | 2009-06-17 | パナソニック電工株式会社 | Light emitting element |
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