JP2003031866A - Tunnelling magnetoresistive effect film and magnetoresistance storage device - Google Patents
Tunnelling magnetoresistive effect film and magnetoresistance storage deviceInfo
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- JP2003031866A JP2003031866A JP2001213439A JP2001213439A JP2003031866A JP 2003031866 A JP2003031866 A JP 2003031866A JP 2001213439 A JP2001213439 A JP 2001213439A JP 2001213439 A JP2001213439 A JP 2001213439A JP 2003031866 A JP2003031866 A JP 2003031866A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、トンネル磁気抵抗
効果膜および磁気抵抗記憶装置に関し、詳しくはトンネ
ル磁気抵抗効果膜が形成される下地層に特徴を有するト
ンネル磁気抵抗効果膜および磁気抵抗記憶装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tunnel magnetoresistive effect film and a magnetoresistive storage device, and more particularly to a tunnel magnetoresistive effect film and a magnetoresistive storage device characterized by an underlying layer on which a tunnel magnetoresistive effect film is formed. Regarding
【０００２】[0002]
【従来の技術】トンネル磁気抵抗効果（以下ＴＭＲとい
う、ＴＭＲはTunnel Magnetic Resistanceの略）膜の特
性は、その膜の結晶配向性によって左右される。この配
向性は、ＴＭＲ膜を成膜する下地層によって制御され
る。したがって、下地層を適切に選択することにより、
ＴＭＲ膜の配向性が良好になる。2. Description of the Related Art The characteristics of a tunnel magnetoresistive effect (hereinafter referred to as TMR, TMR is an abbreviation for Tunnel Magnetic Resistance) film depend on the crystal orientation of the film. This orientation is controlled by the underlayer on which the TMR film is formed. Therefore, by properly selecting the underlayer,
The orientation of the TMR film becomes good.
【０００３】また、ＴＭＲ素子では、その上下に電極が
形成される。その電極の抵抗値はＴＭＲ膜の特性に影響
を及ぼす。その影響は形状効果とよばれ、例えば、App
l. Phys. Lett. 69 (1996) p.708 に開示されているよ
うに、ＴＭＲ膜のトンネルバリア層の抵抗と電極の抵抗
とが近い値であると形状効果が顕著になる。このため、
電極の抵抗は低くする必要があり、抵抗を下げるには、
比抵抗の低い材料を用いるか、もしくは電極を厚く形成
する必要がある。In the TMR element, electrodes are formed above and below the TMR element. The resistance value of the electrode affects the characteristics of the TMR film. The effect is called shape effect.
As disclosed in L. Phys. Lett. 69 (1996) p. 708, the shape effect becomes remarkable when the resistance of the tunnel barrier layer of the TMR film and the resistance of the electrode are close to each other. For this reason,
The resistance of the electrode needs to be low, and to reduce the resistance,
It is necessary to use a material having a low specific resistance or to form a thick electrode.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、下部電
極では、その形状効果により下部電極上に積層される膜
の配向性が影響を受ける。また、下部電極を厚く形成す
ると、結晶粒の成長により表面が粗くなる。このような
粗い表面にＴＭＲ膜を形成した場合、１ｎｍ程度の厚さ
の薄膜で形成されるトンネルバリア層の成膜が全面にわ
たって均一にできず、そのためトンネルバリア層を挟ん
でショートを引き起こす原因となる。However, in the lower electrode, the orientation effect of the film laminated on the lower electrode is affected by the shape effect. Further, if the lower electrode is formed thick, the surface becomes rough due to the growth of crystal grains. When a TMR film is formed on such a rough surface, a tunnel barrier layer formed of a thin film having a thickness of about 1 nm cannot be formed uniformly over the entire surface, which causes a short circuit across the tunnel barrier layer. Become.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記課題を解
決するためになされた磁気抵抗効果膜および磁気抵抗記
憶装置である。The present invention is a magnetoresistive film and a magnetoresistive storage device, which have been made to solve the above problems.
【０００６】本発明のトンネル磁気抵抗効果膜は、下地
層上に形成されるトンネル磁気抵抗効果膜であって、前
記下地層は、金属もしくは合金からなる体心立方構造膜
と、金属もしくは合金からなる最密構造膜（例えば、立
方最密（面心立方）構造膜もしくは六方最密構造膜）と
の積層膜からなるものである。The tunnel magnetoresistive effect film of the present invention is a tunnel magnetoresistive effect film formed on an underlayer, wherein the underlayer comprises a body-centered cubic structure film made of a metal or an alloy, and a metal or an alloy. And a close-packed structure film (for example, a cubic close-packed (face-centered cubic) structure film or a hexagonal close-packed structure film).
【０００７】上記トンネル磁気抵抗効果膜では、下層電
極上層に積層形成される磁気抵抗効果膜の特性を確保す
る下地層に体心立方構造膜と最密構造膜の２層構造を採
用したことにより、表面の粗さを粗くすることなく電極
層として用いる下地層の膜厚を厚くすることが可能にな
る。すなわち、体心立方構造膜上に最密構造膜を形成す
ることにより、最密構造膜の結晶成長の速度を抑制する
ことができるために、最密構造膜の表面が粗くなるのが
抑制される。よって、結晶配向性を良好に保ちつつ表面
粗さを抑えて電極層の抵抗値が低減される。In the above tunnel magnetoresistive effect film, by adopting the two-layer structure of the body-centered cubic structure film and the close-packed structure film as the underlayer which secures the characteristics of the magnetoresistive effect film laminated on the lower layer electrode, It is possible to increase the film thickness of the underlayer used as the electrode layer without increasing the surface roughness. That is, by forming the close-packed structure film on the body-centered cubic structure film, the rate of crystal growth of the close-packed structure film can be suppressed, so that the surface of the close-packed structure film is prevented from becoming rough. It Therefore, the surface roughness is suppressed while maintaining good crystal orientation, and the resistance value of the electrode layer is reduced.
【０００８】一般的にスピンバルブ膜の格子構造は面心
立方構造であり、この配向性を向上させることにより、
特性が向上するため、上記説明したように、下地層とし
て最適なのが立方最密（面心立方）構造もしくは六方最
密構造を持つ金属膜である。Generally, the lattice structure of a spin valve film is a face-centered cubic structure, and by improving this orientation,
As described above, a metal film having a cubic close-packed (face-centered cubic) structure or a hexagonal close-packed structure is most suitable as the underlayer because the characteristics are improved.
【０００９】本発明の磁気抵抗記憶装置は、下地層上に
形成されるトンネル磁気抵抗効果膜を記憶素子に用いた
磁気抵抗記憶装置であって、前記下地層は、金属もしく
は合金からなる最密構造膜と、金属もしくは合金からな
る体心立方格子膜との積層膜からなるものである。A magnetoresistive memory device of the present invention is a magnetoresistive memory device using a tunnel magnetoresistive film formed on an underlayer as a memory element, wherein the underlayer is a close-packed metal or alloy. It is composed of a laminated film of a structural film and a body-centered cubic lattice film made of a metal or an alloy.
【００１０】上記磁気抵抗記憶装置では、下地層の表面
あらさが抑制されるので、ＴＭＲ膜の特に１ｎｍ程度の
薄膜で形成されるトンネルバリア層を均一に成膜するこ
とが可能になるので、トンネルバリア層を付き抜けてシ
ョートが発生することがなくなる。したがって、結晶配
向性を良好に保ちつつ表面あらさを抑えて電極層の抵抗
値を低減することができるＴＭＲ膜を用いることができ
るので、信頼性の高い磁気抵抗記憶装置となる。In the above magnetoresistive memory device, since the surface roughness of the underlayer is suppressed, it is possible to uniformly form a tunnel barrier layer formed of a thin film of about 1 nm of the TMR film. No short circuit will occur through the barrier layer. Therefore, since the TMR film capable of suppressing the surface roughness and reducing the resistance value of the electrode layer while maintaining the good crystal orientation can be used, the magnetoresistive storage device has high reliability.
【００１１】[0011]
【発明の実施の形態】本発明の磁気抵抗効果膜に係る第
１の実施の形態を、図１の概略構成断面図によって説明
する。BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the magnetoresistive effect film of the present invention will be described with reference to the schematic sectional view of the configuration of FIG.
【００１２】図１に示すように、基板１１上には、下地
層１２が形成されている。この下地層１２は、体心立方
構造膜１２１（タンタル膜：厚さは例えば３ｎｍ）と最
密構造（立方最密構造）膜１２２（銅膜１３：厚さは例
えば１０ｎｍ）とを順に積層形成されたものからなって
いる。上記下地層１２上には、反強磁性層１３（白金マ
ンガン膜：厚さは例えば１３ｎｍ）、積層フェリ固定層
１４、トンネルバリア層１５、自由層１６、電極層１７
が順に積層形成されている。上記積層フェリ固定層１４
は、例えば、強磁性層１４１（コバルト鉄：厚さが例え
ば１．５ｎｍ）、ルテニウム膜１４２（厚さは例えば
０．８ｎｍ）、強磁性層１４３（コバルト鉄：厚さが例
えば２ｎｍ）を順に積層形成したものからなる。上記ト
ンネルバリア層１５は、例えば酸化アルミニウム（厚さ
が例えば１ｎｍ）からなる。上記自由層１６は、例えば
強磁性層のコバルト鉄（厚さが例えば１．５ｎｍ）から
なる。上記電極層１９は、例えば体心立方構造のタンタ
ル膜（厚さは例えば５ｎｍ）からなる。As shown in FIG. 1, a base layer 12 is formed on a substrate 11. The underlayer 12 is formed by sequentially stacking a body-centered cubic structure film 121 (tantalum film: thickness is 3 nm, for example) and a close-packed structure (cubic close-packed structure) film 122 (copper film 13: thickness is, for example, 10 nm). It consists of An antiferromagnetic layer 13 (platinum-manganese film: thickness is, for example, 13 nm), a laminated ferri pinned layer 14, a tunnel barrier layer 15, a free layer 16, and an electrode layer 17 are formed on the underlayer 12.
Are sequentially stacked. The laminated ferri pinning layer 14
Is, for example, a ferromagnetic layer 141 (cobalt iron: thickness is, for example, 1.5 nm), a ruthenium film 142 (thickness is, for example, 0.8 nm), and a ferromagnetic layer 143 (cobalt iron: thickness is, for example, 2 nm). It consists of laminated layers. The tunnel barrier layer 15 is made of, for example, aluminum oxide (thickness is 1 nm, for example). The free layer 16 is made of, for example, a ferromagnetic layer of cobalt iron (thickness is, for example, 1.5 nm). The electrode layer 19 is made of, for example, a tantalum film having a body-centered cubic structure (thickness is 5 nm, for example).
【００１３】上記第１の実施の形態では、スピンバルブ
型磁気抵抗効果膜に、固定層が自由層より先に積層され
ている、いわゆるボトム型スピンバルブの構造を示した
が、いわゆるトップ型スピンバルブにも本発明の構成は
適用できる。次に、第２の実施の形態として、トップ型
スピンバルブの磁気抵抗効果膜を図２によって説明す
る。In the first embodiment, the structure of the so-called bottom type spin valve in which the fixed layer is laminated on the spin valve type magnetoresistive film before the free layer is shown. The configuration of the present invention can be applied to a valve. Next, as a second embodiment, a magnetoresistive effect film of a top spin valve will be described with reference to FIG.
【００１４】図２に示すように、基板３１上には、下地
層３２が形成されている。この下地層１２は、体心立方
構造膜３２１（タンタル膜：厚さは例えば３ｎｍ）と最
密構造（立方最密構造）膜３２２（銅膜１３：厚さは例
えば１０ｎｍ）とを順に積層形成されたものからなって
いる。上記下地層３２上には、自由層３３（コバルト
鉄：厚さが例えば２ｎｍ）、トンネルバリア層３４（酸
化アルミニウム：厚さが例えば１ｎｍ）、積層フェリ固
定層３５が順に積層形成されている。この積層フェリ固
定層３５は、例えば、強磁性層３５１（コバルト鉄：厚
さが例えば２ｎｍ）、ルテニウム膜３５２（厚さは例え
ば０．８ｎｍ）、強磁性層３５３（コバルト鉄：厚さが
例えば１．５ｎｍ）からなる。上記積層フェリ固定層３
５上には、反強磁性層３６（白金マンガン膜：厚さは例
えば３０ｎｍ）、電極層３７が順に積層形成されてい
る。上記電極層３７は体心立方構造のタンタル膜（厚さ
は例えば１０ｎｍ）からなっている。As shown in FIG. 2, a base layer 32 is formed on the substrate 31. The base layer 12 is formed by sequentially stacking a body-centered cubic structure film 321 (tantalum film: thickness is 3 nm, for example) and a close-packed structure (cubic close-packed structure) film 322 (copper film 13: thickness is, for example, 10 nm). It consists of A free layer 33 (cobalt iron: thickness is, for example, 2 nm), a tunnel barrier layer 34 (aluminum oxide: thickness is, for example, 1 nm), and a laminated ferri pinning layer 35 are sequentially laminated on the underlayer 32. The laminated ferri pinned layer 35 includes, for example, a ferromagnetic layer 351 (cobalt iron: thickness is, for example, 2 nm), a ruthenium film 352 (thickness is, for example, 0.8 nm), and a ferromagnetic layer 353 (cobalt iron: is, for example, thickness). 1.5 nm). The laminated ferri pinned layer 3
An antiferromagnetic layer 36 (platinum-manganese film: thickness is, for example, 30 nm) and an electrode layer 37 are sequentially stacked on the electrode 5. The electrode layer 37 is composed of a tantalum film having a body-centered cubic structure (thickness is, for example, 10 nm).
【００１５】上記第１、第２の実施の形態〔以下の説明
において（ ）内の符号は第２の実施の形態を示す〕で
は、下地層１２（３２）に体心立方構造膜１２１（３２
１）と最密構造膜１２２（３２２）の２層構造を採用し
たことにより、表面の粗さを粗くすることなく電極層と
して用いる下地層１２（３２）の膜厚を厚くすることが
可能になる。すなわち、体心立方構造膜１２１（３２
１）上に最密構造膜１２２（３２２）を形成することに
より、最密構造膜１２２（３２２）の結晶成長の速度を
抑制することができるために、最密構造膜１２２（３２
２）の表面が粗くなるのを抑制する。表１に電極層の構
造と表面粗さの関係を示す。In the first and second embodiments (the reference numerals in parentheses in the following description indicate the second embodiment), the body-centered cubic structure film 121 (32) is formed on the underlayer 12 (32).
By adopting the two-layer structure of 1) and the close-packed structure film 122 (322), it is possible to increase the thickness of the underlayer 12 (32) used as an electrode layer without roughening the surface roughness. Become. That is, the body-centered cubic structure film 121 (32
1) By forming the close-packed structure film 122 (322) thereon, the crystal growth rate of the close-packed structure film 122 (322) can be suppressed, so that the close-packed structure film 122 (32) is formed.
It suppresses that the surface of 2) becomes rough. Table 1 shows the relationship between the structure of the electrode layer and the surface roughness.
【００１６】[0016]
【表１】 [Table 1]
【００１７】表１に示すように、試料１〜試料６の各種
電極層について、中心線平均粗さ（Ｒａ）を比較する。As shown in Table 1, the center line average roughness (Ra) of the various electrode layers of Sample 1 to Sample 6 is compared.
【００１８】試料１：タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）／銅（Ｃｕ）膜（厚さｔ＝５ｎｍ）／タンタル
（Ｔａ）膜（厚さｔ＝３ｎｍ）の積層構造ではＲａ＝
０．５５８ｎｍとなった。Sample 1: Tantalum (Ta) film (thickness t = 3
nm) / copper (Cu) film (thickness t = 5 nm) / tantalum (Ta) film (thickness t = 3 nm) in the laminated structure Ra =
It became 0.558 nm.
【００１９】試料２：タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）／銅（Ｃｕ）膜（厚さｔ＝１０ｎｍ）／タンタル
（Ｔａ）膜（厚さｔ＝３ｎｍ）の積層構造ではＲａ＝
０．６９９ｎｍとなった。Sample 2: Tantalum (Ta) film (thickness t = 3
nm) / copper (Cu) film (thickness t = 10 nm) / tantalum (Ta) film (thickness t = 3 nm) in the laminated structure Ra =
It became 0.699 nm.
【００２０】試料３：タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）／銅（Ｃｕ）膜（厚さｔ＝２０ｎｍ）／タンタル
（Ｔａ）膜（厚さｔ＝３ｎｍ）の積層構造ではＲａ＝
１．０４１ｎｍとなった。Sample 3: Tantalum (Ta) film (thickness t = 3
nm) / copper (Cu) film (thickness t = 20 nm) / tantalum (Ta) film (thickness t = 3 nm) in the laminated structure Ra =
It became 1.041 nm.
【００２１】試料４：タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）／銅（Ｃｕ）膜（厚さｔ＝５０ｎｍ）／タンタル
（Ｔａ）膜（厚さｔ＝３ｎｍ）の積層構造ではＲａ＝
１．５８６ｎｍとなった。Sample 4: Tantalum (Ta) film (thickness t = 3
nm) / copper (Cu) film (thickness t = 50 nm) / tantalum (Ta) film (thickness t = 3 nm) in the laminated structure Ra =
It became 1.586 nm.
【００２２】試料５：タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）／〔銅（Ｃｕ）膜（厚さｔ＝２ｎｍ）／タンタル
（Ｔａ）膜（厚さｔ＝２ｎｍ）〕を２４層／銅（Ｃｕ）
膜（厚さｔ＝２ｎｍ）／タンタル（Ｔａ）膜（厚さｔ＝
３ｎｍ）の積層構造ではＲａ＝０．４８９ｎｍとなっ
た。Sample 5: Tantalum (Ta) film (thickness t = 3
nm) / [copper (Cu) film (thickness t = 2 nm) / tantalum (Ta) film (thickness t = 2 nm)] 24 layers / copper (Cu)
Film (thickness t = 2 nm) / tantalum (Ta) film (thickness t =
In the laminated structure of 3 nm), Ra = 0.489 nm.
【００２３】試料６：タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）／〔銅（Ｃｕ）膜（厚さｔ＝５ｎｍ）／タンタル
（Ｔａ）膜（厚さｔ＝２ｎｍ）〕を９層／銅（Ｃｕ）膜
（厚さｔ＝５ｎｍ）／タンタル（Ｔａ）膜（厚さｔ＝３
ｎｍ）の積層構造ではＲａ＝０．８３ｎｍとなった。Sample 6: Tantalum (Ta) film (thickness t = 3
nm) / [copper (Cu) film (thickness t = 5 nm) / tantalum (Ta) film (thickness t = 2 nm)] 9 layers / copper (Cu) film (thickness t = 5 nm) / tantalum (Ta) ) Membrane (thickness t = 3
(nm) has a laminated structure of Ra = 0.83 nm.
【００２４】このように、体心立方構造１２１のタンタ
ル膜と最密構造の銅膜とを積層することにより銅膜の総
膜厚を増大させても、表面あらさが大きくなるのを抑制
することが可能になる。In this way, even if the total film thickness of the copper film is increased by stacking the tantalum film of the body-centered cubic structure 121 and the copper film of the close-packed structure, it is possible to prevent the surface roughness from increasing. Will be possible.
【００２５】上記各実施の形態では、下地層１２（３
２）の最密構造膜１２２（３２２）に立方最密（面心立
方）構造の銅を用いたが、銅の他に、立方最密（面心立
方）構造のアルミニウム、ニッケル、ジルコニウム、ル
テニウム、パラジウム、銀、ハフニウム、イリジウム、
白金、金を用いることができる。または六方最密構造の
チタン、コバルト、ロジウム、レニウムを用いることが
できる。また上記体心立方構造膜１２１（３２１）にタ
ンタルを用いたが、タンタルの他に、上記体心立方構造
のα−鉄、モリブデン、タングステン、クロム、ニオ
ブ、バナジウムを用いることができる。In each of the above embodiments, the underlayer 12 (3
Copper of cubic close-packed (face-centered cubic) structure was used for the close-packed structure film 122 (322) of 2). , Palladium, silver, hafnium, iridium,
Platinum or gold can be used. Alternatively, hexagonal close-packed titanium, cobalt, rhodium, or rhenium can be used. Although tantalum is used for the body-centered cubic structure film 121 (321), α-iron, molybdenum, tungsten, chromium, niobium, and vanadium having the body-centered cubic structure can be used in addition to tantalum.
【００２６】上記各実施の形態では、磁性層（強磁性
層）１４１、１４３（３５１、３５３）にコバルト鉄を
用いたが、コバルト、ニッケル、鉄のいずれか、もしく
はこれらを少なくとも１種類以上含んだ合金、もしくは
それらからなる積層膜で形成することも可能である。In each of the above embodiments, cobalt iron was used for the magnetic layers (ferromagnetic layers) 141, 143 (351, 353), but any one of cobalt, nickel, iron, or at least one or more of these is included. It is also possible to form it with a metal alloy or a laminated film made of them.
【００２７】上記各実施の形態では、反強磁性層１３
（３６）に白金マンガンを用いたが、同様の規則合金で
あるニッケルマンガン、不規則合金のイリジウムマンガ
ン、ロジウム（Ｒｈ）マンガン、鉄マンガン等を用いる
こともできる。In each of the above embodiments, the antiferromagnetic layer 13 is used.
Although platinum manganese is used for (36), nickel manganese which is a similar ordered alloy, iridium manganese which is a disordered alloy, rhodium (Rh) manganese, iron manganese and the like can also be used.
【００２８】上記各実施の形態では固定層に積層フェリ
構造を用いているが、単層の強磁性層で構成したもので
あってもよい。In each of the above-mentioned embodiments, the laminated ferri structure is used for the fixed layer, but it may be composed of a single ferromagnetic layer.
【００２９】上記各実施の形態では、自由層１６（３
３）がコバルト鉄の単層構造であるが、積層構造を用い
ることもできる。例えば、ニッケル鉄とコバルト鉄との
積層構造を用いることができる。In each of the above embodiments, the free layer 16 (3
Although 3) has a single layer structure of cobalt iron, a laminated structure can also be used. For example, a laminated structure of nickel iron and cobalt iron can be used.
【００３０】また、上記磁気抵抗効果膜を記憶素子に用
いた磁気抵抗記憶装置では、下地層の表面あらさが抑制
されるので、ＴＭＲ膜の特に１ｎｍ程度の薄膜で形成さ
れるトンネルバリア層を均一に成膜することが可能にな
るので、トンネルバリア層を付き抜けてショートが発生
することがなくなる。したがって、信頼性の高い磁気抵
抗記憶装置となる。Further, in the magnetoresistive storage device using the magnetoresistive effect film as a storage element, the surface roughness of the underlayer is suppressed, so that the tunnel barrier layer formed of a thin film of about 1 nm of the TMR film is uniform. Since it is possible to form a film on the substrate, it is possible to prevent the occurrence of short circuit through the tunnel barrier layer. Therefore, the magnetoresistive memory device has high reliability.
【００３１】[0031]
【発明の効果】以上、説明したように本発明の磁気抵抗
効果膜によれば、結晶配向性を良好に保ちつつ表面あら
さを抑えて電極層の抵抗値を低減することができる。よ
って、ＴＭＲ膜の特性の向上が図れる。As described above, according to the magnetoresistive effect film of the present invention, the surface roughness can be suppressed and the resistance value of the electrode layer can be reduced while maintaining good crystal orientation. Therefore, the characteristics of the TMR film can be improved.
【００３２】本発明の磁気抵抗記憶装置によれば、結晶
配向性を良好に保ちつつ表面あらさを抑えて電極層の抵
抗値を低減することができるＴＭＲ膜を用いることがで
きるので、信頼性の高い磁気抵抗記憶装置となる。According to the magnetoresistive memory device of the present invention, since the TMR film capable of suppressing the surface roughness and reducing the resistance value of the electrode layer while maintaining the good crystal orientation can be used, the reliability is improved. It becomes a high magnetoresistive memory device.
【図１】本発明の磁気抵抗効果膜に係わる第１の実施の
形態を示す概略構成断面図である。FIG. 1 is a schematic sectional view showing a first embodiment of a magnetoresistive effect film according to the present invention.
【図２】本発明の磁気抵抗効果膜に係わる第１の実施の
形態を示す概略構成断面図である。FIG. 2 is a schematic configuration sectional view showing a first embodiment of a magnetoresistive film of the present invention.
１２…下地層、１２１…体心立方構造膜、１２２…最密
構造膜12 ... Underlayer, 121 ... Body-centered cubic structure film, 122 ... Close-packed structure film
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｆ 10/32 Ｈ０１Ｌ 27/10 ４４７ Ｈ０１Ｌ 27/105 Ｇ０１Ｒ 33/06 Ｒ Ｆターム(参考） 2G017 AA01 AB07 AD55 AD65 5D034 BA04 BA05 BA08 BA21 CA08 5E049 AA01 AA04 AA09 AC00 AC05 BA06 DB12 5F083 FZ10 GA30 JA36 JA37 JA38 JA39 Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01F 10/32 H01L 27/10 447 H01L 27/105 G01R 33/06 R F term (reference) 2G017 AA01 AB07 AD55 AD65 5D034 BA04 BA05 BA08 BA21 CA08 5E049 AA01 AA04 AA09 AC00 AC05 BA06 DB12 5F083 FZ10 GA30 JA36 JA37 JA38 JA39
Claims (6)
効果膜であって、 前記下地層は、金属もしくは合金からなる体心立方構造
膜と金属もしくは合金からなる最密構造膜との積層膜か
らなることを特徴とするトンネル磁気抵抗効果膜。1. A tunnel magnetoresistive effect film formed on an underlayer, wherein the underlayer is a laminated film of a body-centered cubic structure film made of a metal or an alloy and a close-packed structure film made of a metal or an alloy. A tunnel magnetoresistive effect film comprising:
くは六方最密構造膜からなることを特徴とする請求項１
記載のトンネル磁気抵抗効果膜。2. The close-packed structure film comprises a cubic close-packed structure film or a hexagonal close-packed structure film.
The tunnel magnetoresistive film described.
とを特徴とする請求項１記載のトンネル磁気抵抗効果
膜。3. The tunnel magnetoresistive effect film according to claim 1, wherein the underlayer is formed in a plurality of layers.
効果膜を記憶素子に用いた磁気抵抗記憶装置であって、 前記下地層は、金属もしくは合金からなる体心立方構造
膜と金属もしくは合金からなる最密構造膜との積層膜か
らなることを特徴とするトンネル磁気抵抗記憶装置。4. A magnetoresistive memory device using a tunnel magnetoresistive film formed on an underlayer as a memory element, wherein the underlayer comprises a body-centered cubic structure film made of a metal or an alloy and a metal or an alloy. 2. A tunnel magnetoresistive memory device comprising a laminated film with a close-packed structure film made of.
くは六方最密構造膜からなることを特徴とする請求項４
記載のトンネル磁気抵抗記憶装置。5. The close-packed structure film comprises a cubic close-packed structure film or a hexagonal close-packed structure film.
A tunnel magnetoresistive storage device as described.
とを特徴とする請求項４記載のトンネル磁気抵抗記憶装
置。6. The tunnel magnetoresistive memory device according to claim 4, wherein the underlayer is formed in a plurality of layers.
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|---|---|---|---|
| JP2001213439A JP2003031866A (en) | 2001-07-13 | 2001-07-13 | Tunnelling magnetoresistive effect film and magnetoresistance storage device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001213439A JP2003031866A (en) | 2001-07-13 | 2001-07-13 | Tunnelling magnetoresistive effect film and magnetoresistance storage device |
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| Publication Number | Publication Date |
|---|---|
| JP2003031866A true JP2003031866A (en) | 2003-01-31 |
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004253807A (en) * | 2003-02-20 | 2004-09-09 | Headway Technologies Inc | Mtj element, mtj element array, and mtj element manufacture method |
| JP2004266252A (en) * | 2003-03-03 | 2004-09-24 | Samsung Electronics Co Ltd | Magnetic tunnel junction structure and method of manufacturing the same |
| US7961441B2 (en) | 2008-01-28 | 2011-06-14 | Tdk Corporation | Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head |
| US8068315B2 (en) | 2007-09-26 | 2011-11-29 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10303477A (en) * | 1997-04-30 | 1998-11-13 | Nec Corp | Magnetoresistance effect element, magneto-resistance effect sensor using this, magnetoresistance detection system, and magnetic storage system |
| JP2001084532A (en) * | 1999-09-09 | 2001-03-30 | Toshiba Corp | Manufacture of magnetoresistance effect element |
| JP2002084016A (en) * | 2000-09-07 | 2002-03-22 | Fujitsu Ltd | Ferromagnetic tunnel junction element and its manufacturing method |
-
2001
- 2001-07-13 JP JP2001213439A patent/JP2003031866A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10303477A (en) * | 1997-04-30 | 1998-11-13 | Nec Corp | Magnetoresistance effect element, magneto-resistance effect sensor using this, magnetoresistance detection system, and magnetic storage system |
| JP2001084532A (en) * | 1999-09-09 | 2001-03-30 | Toshiba Corp | Manufacture of magnetoresistance effect element |
| JP2002084016A (en) * | 2000-09-07 | 2002-03-22 | Fujitsu Ltd | Ferromagnetic tunnel junction element and its manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004253807A (en) * | 2003-02-20 | 2004-09-09 | Headway Technologies Inc | Mtj element, mtj element array, and mtj element manufacture method |
| JP2004266252A (en) * | 2003-03-03 | 2004-09-24 | Samsung Electronics Co Ltd | Magnetic tunnel junction structure and method of manufacturing the same |
| US8068315B2 (en) | 2007-09-26 | 2011-11-29 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers |
| US7961441B2 (en) | 2008-01-28 | 2011-06-14 | Tdk Corporation | Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head |
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