JP2003031759A - Semiconductor package - Google Patents

Semiconductor package

Info

Publication number
JP2003031759A
JP2003031759A JP2001213309A JP2001213309A JP2003031759A JP 2003031759 A JP2003031759 A JP 2003031759A JP 2001213309 A JP2001213309 A JP 2001213309A JP 2001213309 A JP2001213309 A JP 2001213309A JP 2003031759 A JP2003031759 A JP 2003031759A
Authority
JP
Japan
Prior art keywords
package
external connection
semiconductor
semiconductor package
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001213309A
Other languages
Japanese (ja)
Inventor
Riyoujin Hamamatsu
亮仁 浜松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001213309A priority Critical patent/JP2003031759A/en
Publication of JP2003031759A publication Critical patent/JP2003031759A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit package which is improved so that multiplication of pins of a semiconductor package is realized without changing a pin pitch. SOLUTION: In a semiconductor package, external leads 11 and 12 are placed around the package in the top and bottom two steps or more in vertical direction. By placing an external connecting terminal for supplying power and inputting-outputting a control signal and data signal from an IC mounted on the semiconductor package, not only in a step around the package but also in two steps or more around the package, the external connecting terminal is prepared without forming fine pin pitch.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、一般に半導体パ
ッケージに関するものであり、より特定的には、半導体
集積回路の多ピン化を実現することができるように改良
された半導体パッケージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to a semiconductor package, and more particularly, it relates to a semiconductor package improved so as to realize a multi-pin semiconductor integrated circuit.

【0002】[0002]

【従来の技術】近年のICの高機能化、高集積化に伴
い、半導体パッケージに多ピン化の要求が強まってい
る。
2. Description of the Related Art As ICs have been highly functionalized and highly integrated in recent years, there has been an increasing demand for semiconductor packages to have a large number of pins.

【0003】従来、ICパッケージは、図7に示すQuad
Flat Package(QFP)のように、搭載したICに電
源を供給したり、信号を入出力するための外部接続端子
が、そのパッケージの外縁辺からは垂直方向に1段だ
け、または交互に(千鳥足状に)上下2段配設されてい
る構造になっているか、3段以上でパッケージ内部のI
Cを垂直に配置した構造になっている。
Conventionally, an IC package is a Quad shown in FIG.
Like the Flat Package (QFP), the external connection terminals for supplying power to the mounted IC and for inputting / outputting signals have only one step vertically from the outer edge of the package or alternately (staggered feet). Like), it has a structure in which two layers are arranged in the upper and lower layers, or I inside the package has three or more layers.
It has a structure in which C is arranged vertically.

【0004】[0004]

【発明が解決しようとする課題】上述した従来のICパ
ッケージでは、近年の加速度的なICの高集積化、多ピ
ン化の要求に対して、ピンピッチの微細化を進める方向
で対応してきており、この延長線上で現段階からのさら
なる多ピン化を実現していくのは、実装時のはんだ付け
プロセス等において、技術的にも困難になるという問題
がある。
In the above-mentioned conventional IC package, in response to recent demands for acceleration of high integration of IC and increase in pin count, the pin pitch is being miniaturized, There is a problem in that it is technically difficult to realize a higher number of pins from the present stage on this extension line in the soldering process at the time of mounting.

【0005】また、パッケージ内部のICを垂直に配置
した構造は、ICの発熱によりパッケージ全体の発熱が
大きくなるという問題点があった。
Further, the structure in which the ICs inside the package are arranged vertically has a problem that the heat generation of the ICs increases the heat generation of the entire package.

【0006】この発明は、上記のような問題点を解決す
るためになされたもので、ピンピッチはそのままで、半
導体パッケージの多ピン化を実現することができるよう
に改良された半導体パッケージを提供することを目的と
する。
The present invention has been made in order to solve the above problems, and provides an improved semiconductor package so that the pin pitch can be maintained and the number of pins of the semiconductor package can be increased. The purpose is to

【0007】[0007]

【課題を解決するための手段】この発明に係る半導体パ
ッケージによれば、外部リードが、パッケージ外縁辺
で、垂直方向に上下2段、またはそれ以上配設されてい
る。
According to the semiconductor package of the present invention, the external leads are vertically arranged in the upper and lower two stages or more at the outer periphery of the package.

【0008】この発明の好ましい実施態様によれば、上
記外部リードの一部が、放熱用または耐ノイズ用に使用
されている。また、内部のICは並列に配置されてい
る。
According to a preferred embodiment of the present invention, a part of the external lead is used for heat dissipation or noise resistance. The internal ICs are arranged in parallel.

【0009】[0009]

【発明の実施の形態】以下、この発明の実施の形態を図
について説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【0010】実施の形態1 図1は、実施の形態1に係る半導体集積回路パッケージ
の断面図である。図1を参照して、半導体集積回路パッ
ケージ10には、IC13,14が搭載されている。外
部接続端子11,12は、IC13,14に電源の供給
や制御信号やデータ信号を入出力するためのものであ
る。パッケージ内のIC13,14は並列に配置されて
いる。
First Embodiment FIG. 1 is a sectional view of a semiconductor integrated circuit package according to the first embodiment. Referring to FIG. 1, semiconductor integrated circuit package 10 has ICs 13 and 14 mounted thereon. The external connection terminals 11 and 12 are for supplying power to the ICs 13 and 14 and for inputting and outputting control signals and data signals. The ICs 13 and 14 in the package are arranged in parallel.

【0011】本実施の形態に係る半導体パッケージは、
従来のパッケージである、図7に示したQFPの外部リ
ードが、パッケージ外縁辺で垂直方向に上下2段で配設
された構造を特徴としている。ここでは、特にパッケー
ジ10の外縁辺の外部接続下段端子11を信号端子と接
地電位端子として、また、外部接続上段端子12を電源
端子と接地電位端子として使用した場合を例にして説明
する。
The semiconductor package according to this embodiment is
The external leads of the QFP shown in FIG. 7, which is a conventional package, are characterized by a structure in which they are vertically arranged in two steps in the vertical direction at the outer edge of the package. Here, in particular, the case where the external connection lower terminal 11 on the outer edge of the package 10 is used as a signal terminal and a ground potential terminal, and the external connection upper terminal 12 is used as a power supply terminal and a ground potential terminal will be described as an example.

【0012】半導体パッケージ10に搭載された半導体
集積回路には、パッケージの外部接続上段端子12から
電源が供給され、パッケージの外部接続下段端子11か
らは、制御信号やデータ信号が入出力される。
Power is supplied to the semiconductor integrated circuit mounted in the semiconductor package 10 from the external connection upper terminal 12 of the package, and control signals and data signals are input and output from the external connection lower terminal 11 of the package.

【0013】図2は、図1に示した半導体集積回路パッ
ケージの外部接続下段端子が、Leaded Chip Carrier
(LCC)の構造になっているもので、本実施の形態の
他の具体例に係る断面図である。
FIG. 2 shows that the external connection lower terminal of the semiconductor integrated circuit package shown in FIG.
FIG. 9 is a cross-sectional view of another specific example of the present embodiment having a (LCC) structure.

【0014】この実施の形態の場合も、図1に示す実施
の形態と同様で、半導体集積回路パッケージ10に搭載
されたIC13,14には、パッケージの外部接続上段
端子12から電源が供給され、パッケージ外縁辺部の外
部接続下段端子11からは、制御信号やデータ信号が入
出力される。
Also in the case of this embodiment, as in the embodiment shown in FIG. 1, the ICs 13 and 14 mounted on the semiconductor integrated circuit package 10 are supplied with power from the external connection upper terminal 12 of the package, A control signal and a data signal are input and output from the externally connected lower terminal 11 at the outer edge of the package.

【0015】図1または図2に示した実施の形態のよう
に、ICに電源の供給や信号を入出力する外部接続端子
を、図7で示した従来のパッケージのように外縁辺から
1段だけでなく、上下2段に配設することによって半導
体パッケージのピンピッチを微細化することなく、従来
型のパッケージよりもより多くの外部接続端子を得るこ
とができ、近年の加速的なICの多ピン化の要求を実現
することができる。
As in the embodiment shown in FIG. 1 or 2, the external connection terminals for supplying power and inputting / outputting signals to / from the IC are provided one step from the outer edge as in the conventional package shown in FIG. Not only that, by arranging the semiconductor device in upper and lower two stages, it is possible to obtain more external connection terminals than the conventional type package without miniaturizing the pin pitch of the semiconductor package. The pinning requirement can be realized.

【0016】また、図1または図2の実施の形態で説明
したように、外部接続端子をパッケージの外縁辺上段と
パッケージの外縁辺下段とに設けて、電源端子と他の信
号端子と、パッケージの外縁辺上段とパッケージの外縁
辺下段というように別々に独立して使用することによ
り、実装ミスによる信号−電源ショートのためのIC破
壊などの事故を防ぐなど、使い方次第で、利点が得られ
る。
Further, as described in the embodiment of FIG. 1 or 2, the external connection terminals are provided on the upper edge of the outer edge of the package and the lower edge of the outer edge of the package, and the power supply terminal, the other signal terminals, and the package. It is possible to obtain advantages depending on the usage, such as preventing accidents such as IC destruction due to signal-power short circuit due to mounting mistakes by using them independently, such as the upper edge of the outer edge and the lower edge of the package. .

【0017】図3は、図2で示した半導体集積回路パッ
ケージの外部接続端子12が、LCC構造になっている
場合の実施態様の断面図である。
FIG. 3 is a sectional view of an embodiment in which the external connection terminal 12 of the semiconductor integrated circuit package shown in FIG. 2 has an LCC structure.

【0018】この実施の形態の場合も、図1および図2
の実施の形態と同様で、半導体集積回路パッケージ10
に搭載されたICには、パッケージの外部接続上段端子
12から電源が供給され、パッケージ外縁辺部の外部接
続端子11からは制御信号やデータ信号が入出力され
る。
Also in the case of this embodiment, FIG. 1 and FIG.
The semiconductor integrated circuit package 10 is similar to the embodiment described above.
Power is supplied to the IC mounted in the package from the external connection upper terminal 12 of the package, and control signals and data signals are input and output from the external connection terminals 11 at the outer peripheral edge of the package.

【0019】なお、ここではパッケージ外縁辺の外部接
続端子を信号端子として、パッケージ底面の外部接続端
子を電源端子として使用した場合を説明したが、外部接
続端子の使用方法については自由であり限定されない。
Although the case where the external connection terminals on the outer peripheral edge of the package are used as signal terminals and the external connection terminals on the bottom surface of the package are used as power supply terminals has been described here, the method of using the external connection terminals is arbitrary and is not limited. .

【0020】また、外部接続端子の段数を2段として説
明したが、3段以上にすることもできるし、パッケージ
の各外縁辺で段数を変えることもできる。
Although the number of external connection terminals has been described as two, the number of external connection terminals can be three or more, and the number of steps can be changed at each outer edge of the package.

【0021】また、ここでは内部に搭載するICの数が
2つの場合を示したが、2つに限定されるものではな
く、3つ以上でも同様である。
Further, although the case where the number of ICs mounted inside is two is shown here, the number of ICs is not limited to two, and the same applies to three or more.

【0022】さらに、内部の配線15も、図4のように
どのICからどの端子へ配線するかは自由であり限定さ
れない。
Further, as for the internal wiring 15, which IC is connected to which terminal as shown in FIG. 4 is free and is not limited.

【0023】また、内部のICの厚さも同じである必要
はない。さらに、本発明ではICを並列に配置すること
を基本としているが、図5のように並列に配置している
ICのうち、一部または全部が垂直に配置されたICで
あっても、同様に多ピン化が実現できる。図中、IC5
5とIC13が垂直に配置されている。
Further, it is not necessary that the thickness of the IC inside is the same. Further, although the present invention is basically based on arranging the ICs in parallel, even if some or all of the ICs arranged in parallel are arranged vertically as shown in FIG. High pin count can be realized. IC5 in the figure
5 and the IC 13 are arranged vertically.

【0024】以上は、パッケージ外縁辺の外部接続端子
構造として、QFP、LCC構造を例にして実施の形態
を示したが、Dual Inline Package(DIP)、Tape Au
tomated Bonding(TAB)等、その他のパッケージ構
造でも同様の効果を奏する。
Although the QFP and LCC structures have been described above as an example of the external connection terminal structure at the outer edge of the package, the dual inline package (DIP), Tape Au are described.
Similar effects can be obtained with other package structures such as tomated bonding (TAB).

【0025】実施の形態2 図6は、半導体集積回路パッケージにBall Grid Array
(BGA)を適用した場合の断面図である。ここでは、
BGAの例を示したが、Pin Grid Array(PGA)でも
構わない。このように構成することにより、さらなる多
ピン化が容易になる。
Embodiment 2 FIG. 6 shows a ball grid array in a semiconductor integrated circuit package.
It is sectional drawing at the time of applying (BGA). here,
Although an example of BGA is shown, a Pin Grid Array (PGA) may be used. With this configuration, it becomes easier to increase the number of pins.

【0026】実施の形態3 上述のように構成される半導体パッケージにおいて、外
部リードを耐熱、耐ノイズ用に使用する。このように構
成することによって、発熱、ノイズに強くなるという効
果を奏する。
Embodiment 3 In the semiconductor package constructed as described above, the external leads are used for heat resistance and noise resistance. With this configuration, it is possible to obtain an effect of being resistant to heat generation and noise.

【0027】今回開示された実施の形態はすべての点で
例示であって制限的なものではないと考えられるべきで
ある。本発明の範囲は上記した説明ではなくて特許請求
の範囲によって示され、特許請求の範囲と均等の意味お
よび範囲内でのすべての変更が含まれることが意図され
る。
The embodiments disclosed this time are to be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description but by the claims, and is intended to include meanings equivalent to the claims and all modifications within the scope.

【0028】[0028]

【発明の効果】以上説明したように、本発明によれば、
半導体パッケージに搭載したICに電源の供給や制御信
号やデータ信号を入出力する外部接続端子を、パッケー
ジ外縁辺1段だけでなく、パッケージの外縁辺2段もし
くはそれ以上に配設することにより、ピンピッチを微細
化することなく、外部接続端子を用意することができる
効果がある。また、パッケージ内に配置するICがマイ
コンとメモリのように機能が異なる場合でも、外部端子
を分けることができるので、安全に使用できるという利
点がある。
As described above, according to the present invention,
By arranging the external connection terminals for supplying power and inputting / outputting the control signal and the data signal to / from the IC mounted on the semiconductor package not only on the outer peripheral edge of the package but also on the outer peripheral edge of the package in two steps or more There is an effect that an external connection terminal can be prepared without reducing the pin pitch. Further, even if the ICs arranged in the package have different functions such as a microcomputer and a memory, the external terminals can be separated, which is advantageous in that they can be used safely.

【図面の簡単な説明】[Brief description of drawings]

【図1】 実施の形態1に係る半導体パッケージの断面
図である。
FIG. 1 is a sectional view of a semiconductor package according to a first embodiment.

【図2】 実施の形態1の他の具体例に係る半導体集積
回路パッケージの断面図である。
FIG. 2 is a cross-sectional view of a semiconductor integrated circuit package according to another specific example of the first embodiment.

【図3】 実施の形態1のさらに他の具体例に係る半導
体集積回路パッケージの断面図である。
FIG. 3 is a sectional view of a semiconductor integrated circuit package according to still another specific example of the first embodiment.

【図4】 実施の形態1のさらに他の具体例に係る半導
体集積回路パッケージの断面図である。
FIG. 4 is a sectional view of a semiconductor integrated circuit package according to still another specific example of the first embodiment.

【図5】 実施の形態1のさらに他の具体例に係る半導
体集積回路パッケージの断面図である。
FIG. 5 is a sectional view of a semiconductor integrated circuit package according to still another specific example of the first embodiment.

【図6】 実施の形態2に係る半導体集積回路パッケー
ジの断面図である。
FIG. 6 is a sectional view of a semiconductor integrated circuit package according to a second embodiment.

【図7】 従来の半導体集積回路パッケージの概念図で
ある。
FIG. 7 is a conceptual diagram of a conventional semiconductor integrated circuit package.

【符号の説明】[Explanation of symbols]

10 半導体集積回路パッケージ、11,12 外部接
続端子、13,14IC、15 内部配線。
10 semiconductor integrated circuit package, 11, 12 external connection terminals, 13, 14 IC, 15 internal wiring.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 外部リードが、パッケージ外縁辺で、垂
直方向に上下2段、またはそれ以上配設されている半導
体パッケージ。
1. A semiconductor package in which external leads are vertically arranged in two steps or more or more at the outer edge of the package.
【請求項2】 前記外部リードの一部が、放熱用または
耐ノイズ用に使用されている、請求項1に記載の半導体
パッケージ。
2. The semiconductor package according to claim 1, wherein a part of the external lead is used for heat dissipation or noise resistance.
【請求項3】 内部のICは並列に配置されている、請
求項1または2に記載の半導体パッケージ。
3. The semiconductor package according to claim 1, wherein the internal ICs are arranged in parallel.
JP2001213309A 2001-07-13 2001-07-13 Semiconductor package Withdrawn JP2003031759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001213309A JP2003031759A (en) 2001-07-13 2001-07-13 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001213309A JP2003031759A (en) 2001-07-13 2001-07-13 Semiconductor package

Publications (1)

Publication Number Publication Date
JP2003031759A true JP2003031759A (en) 2003-01-31

Family

ID=19048306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001213309A Withdrawn JP2003031759A (en) 2001-07-13 2001-07-13 Semiconductor package

Country Status (1)

Country Link
JP (1) JP2003031759A (en)

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