JP2003031757A - Hybrid module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize miniaturization, reduction of the height and high heat radiation of a hybrid module on which a pyrogenetic integrated element is mounted. SOLUTION: By using an integrated passive element formed by integrating a passive element, a pyrogenetic integrated circuit is also mounted on a recessed part formed on a circuit board, so that miniaturization, reduction of the height and high heat radiation are realized. Thus, a small and low-height hybrid module, on which the pyrogenetic integrated circuit is mounted, is realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a module having a circuit pattern formed thereon, and more particularly to a hybrid module having a heat generating integrated circuit and an integrated passive element.

[0002]

2. Description of the Related Art A conventional hybrid module having a heat-generating integrated circuit such as a field effect transistor or a power semiconductor mounted on a circuit board has a heat-radiating structure in which heat-radiating fins are connected to the heat-generating integrated circuit, In general, a method of mounting a flexible integrated circuit on the circuit board face-up and radiating heat from the entire back surface of the integrated circuit to the circuit board is common. Japanese Patent Laid-Open No. 10-50926 discloses that
The heat-generating circuit component is mounted on the side of the circuit board that faces the parent circuit board, and the heat generated by the circuit component is transferred to the parent circuit board directly or via a film-shaped heat conductive member. Described hybrid module. The heat generated in the integrated circuit having heat generation is dissipated through the main circuit board.

[0003]

The heat radiation method using the heat radiation fins of the prior art has a problem that installation of the heat radiation fins increases the volume of the hybrid module and is not suitable for miniaturization. Further, when mounting on a circuit board face up, wire bonding connection is required and a bonding area needs to be provided on the circuit board side, which is not suitable for miniaturization. In addition, wire bonding has a problem of high inductance. The method of mounting the heat-generating integrated circuit and the circuit component on the opposing surfaces of the circuit board has a problem that the height cannot be reduced because of the height of the circuit component.

In view of the excessive size of a hybrid module having such a conventional heat-generating integrated circuit, an object of the present invention is to use an integrated passive element, which has good heat dissipation and is suitable for downsizing and height reduction. To provide a hybrid module.

[0005]

Means for Solving the Problems The above problems include a circuit board having a recess, a heat generating integrated circuit mounted in the recess in a face-down manner, and an integrated passive element, and electrically connected to an external substrate. A hybrid module is characterized in that the connection is made on the same side as the heat-generating integrated circuit. That is, by mounting the integrated passive element in which the integrated circuit having heat generating property and the circuit component are integrated in the concave portion provided on the circuit substrate, the circuit component conventionally mounted on the circuit substrate becomes unnecessary. This achieves a low profile. Further, the heat generated by bringing the back surface of the integrated circuit having heat generation into contact with the external substrate can be efficiently radiated. Further, the integrated passive element can achieve the purpose by being mounted in a recess formed on the surface opposite to the recess in which the integrated circuit having heat generation is mounted. Further, the integrated passive element can achieve the object even if it is mounted in a recess formed on a surface opposite to the same side surface of the recess on which an integrated circuit having heat generation is mounted. The problem can also be solved by thermally connecting the heat generating integrated circuit and the external substrate through a heat conductive thin film.

The integrated passive element used in the present invention includes a plurality of elements selected from a capacitor element, an inductor element and a resistance element, which are composed of an organic insulating film, a metal wiring and a dielectric material on an insulating substrate. Although there is no particular limitation on the manufacturing method, it is possible to form an integrated passive element with high accuracy and high integration by using the thin film wiring method. The integrated passive element thus formed has a mounting density 10 times or more that of a conventional 1005 circuit component (capacitor, inductor, resistor). Here, the mounting density represents the number of circuit components that can be mounted per unit area. Here, the capacitor element is one or a plurality of capacitor elements having a structure in which a dielectric material made of an inorganic material is sandwiched between two metal electrodes,
A structure in which a dielectric material made of an organic material is sandwiched between two metal electrodes.

The metal electrode is preferably a conductive material having a low electric resistance. Specifically, gold, copper, nickel, aluminum,
Platinum, tungsten, molybdenum, iron, niobium, titanium, nickel / chromium alloy, iron / nickel / chromium alloy, tantalum nitride, etc. may be mentioned. Particularly, copper is preferable because of its low electric resistance. Further, the surface of the metal electrode needs to be flat, and the surface irregularities are preferably 1/25 or less of the thickness of the dielectric material. As the method for forming the metal electrode, after forming the conductive material into a predetermined film thickness, forming a resist pattern by dry or wet etching, or forming a resist pattern and then forming by electrolysis or electroless plating. May be.

Further, the inorganic material is not limited as long as it is generally used as a dielectric material for capacitors, and examples thereof include oxides of Ta, Mg, Sr and the like.
Specifically, Ta ₂ O ₅ , BsT, SrTiO ₃ , TiO ₂ ,
In addition to oxides such as MnO ₂ , Y ₂ O ₃ , SnO ₂ , and MgTiO ₃ , barium titanate compounds or barium titanate compounds doped with zirconium or tin, WO ₃ , S
rO, mixed barium / strontium oxide,
BaWO ₄ , CeO _{2 and the} like can be mentioned. The forming method is not particularly limited, and a sputtering method, a dry method such as a plasma CVD method, or a wet method such as an anodic oxidation method can be used. The forming method is not particularly limited, and a sputtering method, a dry method such as a plasma CVD method, or a wet method such as an anodic oxidation method can be used.

The inductor element of the present invention is not particularly limited as long as it is a so-called inductive circuit element, and for example, a spiral type formed in a plane, a plurality of stacked layers, or a solenoid type is used.

Further, the inductor element and the metal wiring may be made of the same material or different materials, and are appropriately selected depending on electric conductivity, adhesiveness with surrounding materials, forming method, and the like. Furthermore, the forming method is not particularly limited. For example, by using the sputtering method or the like, Cu
May be formed, or Ti, Cr or the like may be formed at the interface in consideration of adhesiveness with surrounding materials. Further, a thin film to be a seed film may be formed by Cu or the like by a sputtering method or the like and then formed by an electrolytic plating method or the like. Further, as a wiring and inductor element patterning method, a general wiring patterning method such as an etching method or a lift-off method can be used. Alternatively, a resin paste containing a metal such as Ag may be used to form it by a printing method or the like. Further, when the formation temperature of the inorganic dielectric is high, a metal having high oxidation resistance and heat resistance such as Pt can be used.

The resistance element of the present invention has a structure in which a resistance material is sandwiched between two metal electrodes, and the resistance material is not particularly limited as long as it is generally used as a resistance material, for example, CrSi, TiN. Are used. The forming method is also not particularly limited, and for example, a sputtering method, a plasma CVD method or the like is used.

The organic insulating material is not particularly limited as long as it is an organic material generally used for semiconductor applications, and may be either thermosetting or thermoplastic. For example, polyimide,
Polycarbonate, polyester, polytetrafluoroethylene, polyethylene, polypropylene, polyvinylidene fluoride, cellulose acetate, polysulfone, polyacrylonitrile, polyamide, polyamideimide, epoxy, maleimide, phenol, cyanate, polyolefin, polyurethane and the use of these compounds You can A mixture obtained by adding a rubber component such as acrylic rubber, silicone rubber or nitrile butadiene rubber to these compounds, an organic compound filler such as a polyimide filler or an inorganic filler such as silica may be used. Further, it may be formed of a photosensitive material containing the above material.

Particularly, polyimide resins are preferable because they are excellent in heat resistance and chemical resistance, and those to which photosensitivity is imparted are also excellent in processability. Benzocyclobutene resin has a low dielectric loss tangent and is preferable when the capacitor of the present invention is used as a high frequency component. Similarly, a low dielectric loss tangent resin composition containing a cross-linking component having a plurality of styrene groups represented by the general formula (Formula 1) and further containing a high molecular weight polymer having a weight average molecular weight of 5000 or more is preferable because the transmission loss is reduced. The skeleton connecting the styrene groups of this resin composition is preferably a hydrocarbon skeleton containing an alkylene group such as methylene or ethylene.
Specifically, 1,2-bis (p-biphenyl) ethane, 1,
2-bis (m-biphenyl) ethane and its analogs,
Oligomer such as a homopolymer of divinylbenzene having a vinyl group in the side chain or a copolymer with styrene or the like can be mentioned.

[0014]

[Chemical 1]

(However, R represents a hydrocarbon skeleton which may have a substituent, R ¹ represents any ^one of hydrogen, methyl and ethyl, m is 1 to 4, and n is 2 or more. Further, as the forming method, a pattern printing method such as a printing method, an inkjet method, an electrophotographic method, a film sticking method, a spin coating method, or the like, and then a photo process or a laser after forming an organic insulating material There is a method of forming a pattern by a method such as the above, or a method of combining them.

In addition to these, epoxy resin, unsaturated polyester resin, epoxy isocyanate resin, maleimide resin, maleimide epoxy resin, cyanate ester resin,
Various thermosetting resins such as cyanate ester epoxy resin, cyanate ester maleimide resin, phenol resin, diallyl phthalate resin, urethane resin, cyanamide resin, maleimide cyanamide resin, materials combining two or more of the above resins, and inorganic fillers, etc. It may be a material in which is mixed. It is also possible to impart photosensitivity to the resin and control the shape of the stress buffer layer by a predetermined exposure and development process.

The insulating substrate of the present invention is not particularly limited as long as it is a material that can form an integrated passive element and can withstand use conditions. If a glass substrate having a smooth surface is used, a fine pattern can be formed with high precision, heat resistance and chemical resistance are excellent, and an excellent integrated passive device is obtained due to low dielectric loss. Here, a smooth surface has an average roughness Ra of 20 μm.
Refers to the following planes. The glass material is not particularly limited as long as it is a glass substrate having a high insulating property, and is selected in consideration of strength, workability and the like. Especially Sc, Y, La, Pr, N
d, Pm, Sm, Eu, Gd, Tb, Dy, Ho, E
It is desirable to contain at least one rare earth element selected from the group of r, Tm, Yb, and Lu. Furthermore, the rare earth element is contained in an amount of 0.5 to 20% by weight based on the oxide of Ln ₂ O ₃ (Ln is a rare earth element), and as another component, SiO ₂ : 40 to 80% by weight, B ₂ O ₃ : 0
20 wt%, R ₂ O (R is an alkali metal): 0-20
Wt%, RO (R is an alkaline earth metal): 0-20 wt%, Al ₂ O _3: 0 to 17 includes weight%, and R ₂ O + R
O: 10 to 30% by weight is desirable. By doing so, the strength of the glass substrate is significantly improved and the workability is remarkably improved.

The conductive thin film used in the present invention is not particularly limited as long as it has a predetermined conductivity. A die bonding material represented by silver paste, solder, and a conductive film that is a composite of resin and metal are generally used.

Further, in the present invention, it is also possible to mount the circuit components together within a range that does not hinder the miniaturization of the circuit board. At this time, it is desirable from the viewpoint of reducing the height that the circuit board is provided with a concave portion and is mounted therein.

The circuit board used in the present invention may be a resin board, a thick film wiring board, or the like. There is no particular limitation on the method of forming the concave portion of the circuit board, but the method of countersinking is simple.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to Examples. In all the drawings for explaining the present invention, components having the same function are designated by the same reference numeral, and the repeated description thereof will be omitted.

(Example of Fabrication of Integrated Passive Element) FIG. 1 is a sectional view of an integrated passive element used in the present invention. In FIG. 1, reference numeral 1 is a glass substrate (Nippon Electric Glass, BLC) having a thickness of 0.3 mm.

In FIG. 1, reference numeral 2 denotes an organic insulating material, which uses a photosensitive polyimide (Hitachi Kasei, HD-6000).

The capacitor element 3 formed inside the organic insulating material 2 has a three-layer structure consisting of a lower electrode 3a, a dielectric material 3b and an upper electrode 3c. The lower electrode 3a is Cu,
The dielectric material 3b is made of Ta oxide, and the upper electrode 3c is made of Cu.

The inductor element 4 is a spiral inductor, is formed on the same surface as the upper electrode 3a of the capacitor element 3, and its material is Cu.

The resistance element 5 comprises a resistor 5a and electrodes 5b and 5c. The resistor is a compound of Ta and Ti, and the electrodes 5b and 5c are made of Cu.

In FIG. 1, each element formed inside the organic insulator 2 is a circuit having a predetermined function.

In FIG. 1, reference numeral 6 denotes a metal terminal portion used for connection with the outside. In the case of this drawing, a solder ball 7 is mounted on the metal terminal portion 12.

Next, a method of manufacturing the electronic circuit component shown in FIG. 1 will be described. Cr on the glass substrate main surface by sputtering
Was deposited to a thickness of 50 nm and Cu was further deposited to a thickness of 500 nm to form a copper plating power supply seed film. A negative type liquid resist PMER-N-CA1000 (manufactured by Tokyo Ohka Co., Ltd.) was spin-coated on the Cu film, prebaked on a hot plate, and then exposed and developed to form a resist mask. Electrolytic copper plating was performed on the resist opening at a current density of 1 A / dm for 10 μm. After that, the resist mask was removed, and the copper seed film was removed by a copper etching solution cobra etch (manufactured by Ebara Densan). Further, using a permanganate-based Cr etching solution, Cr
The seed film was removed to form a lower electrode.

Next, Cr was formed as a barrier film by a 50 nm sputtering method.

Next, Ta ₂ O ₅ was formed into a film having a thickness of 500 nm on the lower electrode by a sputtering method. This Ta ₂ O ₅
Positive type liquid resist OFPR800,500cp
(Tokyo Ohka Co., Ltd.) was applied, and a resist mask of a dielectric material was formed through drying, exposure, and development steps. Next, after dry etching using CF ₄ to remove unnecessary portions,
The resist mask was removed, and the barrier layer in unnecessary portions was etched with a permanganate-based Cr etching solution to form a dielectric material.

Next, photosensitive polyimide HD6000 (manufactured by Hitachi Chemical Co., Ltd.) was applied by spin coating, prebaked on a hot plate, and exposed and developed to expose the dielectric material on the lower electrode. At this time, the polyimide coating was opened at a temperature of 250 ° C./2 in a nitrogen atmosphere so that the polyimide coating was opened to be 80 μm inside the scribe area used for cutting into individual pieces as an electronic circuit component.
It was cured for a time to form an organic insulating material having a thickness of 10 μm.

Next, a TaN film was formed by a 500 nm sputtering method. On top of this, a positive type liquid resist OFPR80
After spin-coating 0,100 cp and pre-baking, it was exposed and developed to form a resist pattern mask. The TaN film was CF ₄ dry-etched using this mask. Next, the resist was peeled off to form a plurality of resistance elements.

Next, a sputtering method was used to deposit Cr to a thickness of 50 nm and further Cu to a thickness of 500 nm to form a seed film.
A negative liquid resist PMER-N-CA is formed on the Cu film.
After spin coating 1000 (manufactured by Tokyo Ohka) and prebaking on a hot plate, a resist mask was formed through exposure and development steps. Electrolytic copper plating was performed on the resist opening at a current density of 1 A / dm for 10 μm. After that, the resist mask was removed, and the copper seed film was removed by a copper etching solution cobra etch (manufactured by Ebara Densan). Further, the Cr seed film was removed using a permanganate-based Cr etching solution to form an upper electrode, a resistor electrode and an inductor element.

A photosensitive polyimide HD6000 is formed on the surface on which the upper electrode, the resistor electrode and the inductor element are formed.
(Manufactured by HDMS) was spin-coated and pre-baked, then exposed and developed to form an opening for interlayer connection. At this time, the polyimide coating is 80 μm larger than the scribe area used for cutting into individual pieces as electronic circuit parts.
It was opened so that it might be inside. Furthermore, 250 ℃ / 1h
Cured to form an organic insulating material.

Electroplating seed films Cr: 50 nm, Cu: 500 for forming metal terminals on the surface of the organic insulating material.
nm film was formed. Negative type liquid resist material PM on this Cu film
ER-N-CA1000 (manufactured by Tokyo Ohka Co., Ltd.) was spin-coated, pre-baked, exposed and developed to form a plating resist mask, and then a 10 μm plating film was formed by Cu electroplating. A plated film was formed. Finally, the resist was peeled off, the electroplating seed film was peeled off, and wiring and metal terminal portions were formed.

A photosensitive polyimide HD6000 (made by HDMS) was spin-coated on the surface on which the metal terminals were formed, prebaked, and then exposed and developed to form openings for forming solder balls. At this time, an opening was formed so that the polyimide coating portion was on the inner side of a scribe area used for cutting into individual pieces by cutting into electronic circuit parts and separating them into individual pieces. Further, it was cured at 250 ° C. for 1 hour to form an organic insulating material.

After subjecting the surface of the metal terminal portion to electroless gold plating, a solder flux is applied to a predetermined portion with a metal mask, and lead-free solder balls having a diameter of 200 μm are arranged to form external electrodes by reflow treatment. .

Finally, an electronic circuit component was created by dicing into pieces using a dicing device.

As described above, by integrating the passive elements such as inductors, capacitors, and resistors, which are conventionally mounted as single components, on the substrate, the mounting density of the passive element components can be set to 1005 as compared with the conventional individual component mounting. It can be increased by a factor of about 7 in comparison. As a result, the size of the circuit board can be minimized, and the required passive element components can be mounted in the recesses provided in the circuit board, and the hybrid module can be made compact and low in height. Furthermore, by using a glass having a high insulating property for the substrate, it is possible to prevent a decrease in the efficiency of each element, and to obtain an efficiency that is about 5 times that of a conventional silicon substrate. Furthermore, it can be manufactured at half the cost of using a silicon substrate. Furthermore, by forming passive elements such as capacitors, inductors, and resistors inside the edges of the glass substrate, the component parts where concentrated stress is applied during cutting of electronic circuit components or mounting of electronic circuit components are It is possible to obtain an electronic circuit component which has a high reliability and a high manufacturing yield because it can withstand the stress and the damage of the electronic circuit component due to the application of the stress is significantly reduced.

FIG. 1 shows one embodiment of the integrated passive element used in the present invention, and the arrangement of each element is not limited to this.

(Embodiment 1) A ceramic circuit board (4 mm) prepared in advance so that the connecting terminals are exposed on the bottom surface of the counterbore.
× 4mm, thickness 0.65mm) by recessing into a predetermined position to mount a power semiconductor (1mm × 2mm, thickness 0.2mm) and integrated passive device (1mm × 2mm, thickness 0.3)
4 mm) to form a recess for mounting. At this time, in order to dissipate heat, the recess for mounting the power element should be designed so that when the power element is mounted and the circuit board is further mounted on the external board, the external board and the back surface of the power semiconductor are in close contact with each other. Is important. The recess for mounting the integrated passive device is designed within a range that does not hinder the mounting of the external board of the circuit board, and there is no special limitation. The power semiconductor and the integrated passive element were mounted in a predetermined recess of the circuit board using solder balls to form a module. The height of the module is 0.65mm, which realizes a low profile. Further, this module was mounted on an external board (glass epoxy wiring board) to form a hybrid module (FIG. 2). Since the recesses for mounting the integrated passive device and the power semiconductor are on the same surface side, the manufacturing process is simple. When the power semiconductor was operated and the thermal resistance of the power semiconductor part of the hybrid module was measured, it was 5 ° C.
High heat dissipation was achieved with / W. This is because the heat generated in the power semiconductor was efficiently dissipated from the back surface of the power semiconductor to the external substrate.

(Embodiment 2) A circuit similar to that of Embodiment 1 is provided with a concave portion for mounting an integrated passive element on a surface opposite to a surface for mounting a power semiconductor to form a hybrid module.
The outer shape of the created module is 3mm x 3mm, thickness 0.8mm
(Fig. 3). The thermal resistance measured in the same manner as in Example 1 was 5 ° C./W.

By allocating the concave portion for mounting the power semiconductor and the concave portion for mounting the integrated passive element to the facing surfaces, a very small module can be realized. Since the integrated passive device is exposed to the outside in the hybrid module, the integrated passive device can be modified and replaced. This can improve the yield of the hybrid module.

(Embodiment 3) A ceramic circuit board (4 mm) prepared in advance so that the connecting terminals are exposed on the bottom surface of the counterbore.
A recess for mounting a power semiconductor (1 mm × 2 mm, thickness 0.2 mm) and an integrated passive device 1 (1 mm × 2 mm, thickness 0.8 mm) by countersinking at a predetermined position of × 4 mm, thickness 0.8 mm). Three
4mm) Integrated passive device 2 (1mm
× 2mm, thickness 0.34mm), integrated passive device 3 (1mm × 2)
mm, thickness 0.34 mm) is formed on the surface facing the surface on which the power semiconductor is mounted. At this time, in order to dissipate heat, the recess for mounting the power element should be designed so that when the power element is mounted and the circuit board is further mounted on the external board, the external board and the back surface of the power semiconductor are in close contact with each other. Is important. The recess for mounting the integrated passive device is designed within a range that does not hinder the mounting of the external board of the circuit board, and there is no special limitation. The power semiconductor and the integrated passive element were mounted in a predetermined recess of the circuit board using solder balls to form a module. The height of the module is 0.8mm, which realizes a low profile. Further, since both sides of the circuit board are used for mounting the integrated passive element in this module, the miniaturization is achieved more efficiently. Further, this module was mounted on an external board (glass epoxy wiring board) to form a hybrid module (FIG. 4). When the power semiconductor was operated and the thermal resistance of the power semiconductor part of the hybrid module was measured, high heat dissipation was realized at 5 ° C / W. This is because the heat generated in the power semiconductor was efficiently dissipated from the back surface of the power semiconductor to the external substrate.

(Comparative Example 1) A circuit similar to that of Example 1 was formed on a circuit board having similar dimensions (FIG. 5). At this time, individual components were used as passive elements. Since 18 individual parts are required and cannot be accommodated in the recess, the module is mounted on the surface facing the power semiconductor mounting surface. The height of the module was 1.2 mm, which was about twice as high as that in Example 1.

(Comparative Example 2) A circuit similar to that of Example 1 was formed on the same circuit board (FIG. 6). However, the connection with the external substrate was made on the surface facing the power semiconductor mounting surface. When the thermal resistance of the power semiconductor portion of this hybrid module was measured, it was 30 ° C./W.

(Embodiment 4) A module similar to that of Embodiment 1 was formed, and a silver paste was interposed between the power semiconductor and the external substrate when the module was mounted on the external substrate (FIG. 7). When the thermal resistance of the power semiconductor part of this hybrid module was measured, high heat dissipation was realized at 4 ° C / W. This is because the silver paste promotes thermal contact between the power semiconductor and the external substrate, and the heat generated in the power semiconductor is more efficiently dissipated from the back surface of the power semiconductor to the external substrate.

[0049]

According to the present invention, it is possible to provide a hybrid module having a small-sized and low-profile heat-generating integrated circuit.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of an integrated passive device used in the present invention.

FIG. 2 is a schematic sectional view showing a first embodiment of the present invention.

FIG. 3 is a schematic sectional view showing a second embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing a third embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing a first comparative example of the present invention.

FIG. 6 is a schematic cross-sectional view showing a second comparative example of the present invention.

FIG. 7 is a schematic sectional view showing a fourth embodiment of the present invention.

[Explanation of symbols]

1 ... Glass substrate, 2 ... Organic insulator, 3 ... Capacitor, 4
Inductor, 5 ... Resistor, 6 ... Metal terminal part, 7 ... Solder ball, 8 ... External substrate, 9 ... Solder connection part, 10 ... Power semiconductor, 11 ... Integrated passive element, 12 ... Ceramic circuit board, 13 ... Recessed part, 14 ... Circuit parts, 15 ... Silver paste connection part.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05K 3/36 H01L 23/12 B (72) Inventor Masahiko Ogino 7-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi, Ltd. Hitachi Research Laboratory (72) Inventor Toshihide Ikutame No. 1-1 Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Naruhisa Motowaki Omi Mika Hitachi City, Ibaraki Prefecture 7-1-1, Machi, Hitachi Ltd., Hitachi Research Laboratory, Ltd. (72) Inventor, Seiji Watabiki 7-1, 1-1, Omika-cho, Hitachi City, Ibaraki Hitachi Ltd., Hitachi Research Institute, Ltd. (72) Inventor, Eiji Fukumoto 7-1, Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Yoko Furukawa 7-1, Omika-cho, Hitachi City, Ibaraki Prefecture No. 1 Hitachi Ltd., Hitachi Research Laboratory (72) Inventor Hitoshi Akamine 5-20-1, Kamimizuhonmachi, Kodaira-shi, Tokyo Incorporated Hitachi Ltd. Semiconductor Group (72) Inoue Tsuneo Kodaira, Tokyo 5-20-1 Kamimizuhonmachi, Hitachi Ltd. Semiconductor Group, Inc. (72) Inventor Seiji Kubo 5-20-1 Kamimizuhoncho, Kodaira-shi, Tokyo F-Term within Hitachi Ltd. Semiconductor Group (reference) 5E319 AA01 AB05 AB10 AC01 BB02 CC22 GG11 5E336 AA08 AA13 BB02 BC26 CC31 CC60 EE01 GG03 5E344 AA01 AA12 AA17 AA19 BB02 BB04 CC24 DD02 EE02 5F036 AA01 BB21 BC33

Claims (6)

[Claims] 1. A circuit board having at least one recess, at least one heat-generating integrated circuit mounted in the recess in a face-down manner, and at least one integrated passive element also mounted in the recess. A hybrid having an electric connection with an external substrate on the same surface side as the heat generating integrated circuit, and the integrated circuit and the external substrate are in contact with each other directly or through a conductive material. module. 2. The hybrid module according to claim 1, wherein a recess for mounting the heat generating integrated circuit and the integrated passive element is on the same surface side of the circuit board. 3. The hybrid module according to claim 1, wherein a recess for mounting the integrated circuit having the heat generating property and an integrated passive device is provided on opposite surfaces of the circuit board. 4. The hybrid module according to claim 1, wherein an integrated passive element is mounted on a surface opposite to the same surface of the heat generating integrated circuit. 5. The hybrid module according to claim 1, wherein the integrated circuit having a heat generating property and the external substrate are thermally connected to each other through a heat conductive thin film. 6. A circuit board having a recess, an integrated circuit mounted in the recess, and an integrated passive element mounted in the recess, and an electrical connection with an external substrate having the heat generating property. A hybrid module having a structure in which the integrated circuit and the external substrate are brought into contact with each other directly or through a conductive material on the same surface side as the circuit.