JP2003027226A - Sputtering system and sputtering deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a structure of a target which is capable of achieving the uniformity of a film thickness distribution in the progressing direction of a rotating substrate with a carousel-type sputtering system. SOLUTION: A target surface of this target has a prescribed angle of inclination in such a manner that the target surface facing the substrate attached to a substrate holder does not parallel to the substrate surface when the target attains a positional relation to face the substrate. The angle of inclination is designed at the optimum angle according to the constitution conditions of the sputtering system. There is an embodiment to form the target surface to a single slope, (i.e., a wedge shape) inclining in one direction in addition to an embodiment to form the target surface to an A shape, (i.e., a roof shape).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus and a sputtering film forming method applied to a film forming process of an optical filter or the like, and more particularly to a structure of a target mounted on a carousel type sputtering apparatus.

[0002]

2. Description of the Related Art Japanese Unexamined Patent Publication (Kokai) No. 3-253568 discloses a carousel type sputtering apparatus for forming a film on a substrate such as a glass plate. The carousel type sputtering device is a rotating / batch type sputtering device in which a polygonal prism-shaped substrate holder (rotating drum) is placed in the chamber and a magnetron holding a rectangular target is placed inside the chamber wall. have. Film formation is performed by supplying power to the magnetron while rotating the substrate holder on which the substrate is attached to generate plasma on the upper surface of the target and introducing a predetermined reaction gas into the chamber.

[0003]

However, since the carousel type sputtering apparatus has a structure in which film formation is performed while rotating each substrate holder forming a regular polygon, it is pointed out in Japanese Patent Laid-Open No. 3-253568. Like
In the part corresponding to the side of the regular polygon and the part corresponding to the edge,
The relationship between the shortest approach distance to the target and the angle of the substrate surface with respect to the target is different. Therefore, the probability of attachment of sputtered atoms to the substrate is different, and the film thickness distribution tends to be non-uniform with respect to the rotation direction of the substrate (referred to as the “traveling direction” in the sense of traveling in the lateral width direction of the substrate). .

FIG. 26 shows a schematic diagram thereof. FIG. 26 (a)
Shows a state in which the portion corresponding to the side of the regular polygon constituted by the substrate holder 202 is closest to the target 210, and FIG. 8B shows a state in which the ridge of the regular polygon is closest to the target 210. Reference numeral 220 is a backing plate of the magnetron unit on which the target 210 is mounted. The probability of attachment of sputtered atoms is the target 21
It depends on the distance r from 0 to each position on the surface of the substrate 204 and its direction (referred to as “vector <r>”), and the angle φ formed by the vector <r> and the substrate surface.

As shown in FIGS. 26 (a) and 26 (b),
Depending on the rotation of the substrate holder 202, a vector <r> and an angle φ are generated between a part corresponding to a side of a regular polygon and a part corresponding to a ridge.
Therefore, in the conventional film forming method, as shown in FIG. 26C, more atoms are attached to the peripheral portion of the substrate 204, and the film thickness in the peripheral portion tends to be larger than that in the central portion. is there.

[0006] With respect to such a problem, JP-A-3-253
Although the 568 patent devises the arrangement relationship of the cathode electrodes, the film is formed by a sputtering apparatus (method) using two cathodes and two power supplies for applying electric power to the cathode as in the same patent. In order to make the thickness uniform, the two cathodes contribute to the film formation in pairs, so the factors that affect the film formation rate (magnetic field, applied voltage, target surface condition, gas pressure, etc.) are between the two cathodes. It is necessary to reduce the difference. However, it is difficult to match the conditions for the two cathodes, and as a result, it is not easy to control the uniformity of the film thickness. .

The present invention has been made in view of the above circumstances, and it is possible to more easily achieve a uniform film thickness distribution in the traveling direction of a rotating substrate as compared with a conventional one, and to reduce the size and cost of the apparatus. It is an object of the present invention to provide a sputtering apparatus and a sputtering film forming method that can realize high efficiency.

[0008]

In order to achieve the above object, the invention according to claim 1 is such that a drum having a polygonal cross section or a circular cross section is rotatably installed in a chamber, and an outer peripheral surface of the drum is provided. A substrate holder is provided on the upper side, and a magnetron sputtering source composed of a target and a magnetron unit for holding the target is arranged inside the chamber wall, and the target is arranged by the magnetron unit so as to be parallel to the rotation axis of the drum. In the carousel-type sputtering apparatus having a held structure, the target surface facing the substrate is not parallel to the substrate surface when the target has a positional relationship facing the substrate attached to the substrate holder. As described above, the target surface has a predetermined inclination angle.

The "opposite positional relationship" means that the distance between the center point of the substrate supporting surface of the substrate holder and the center point of the magnetron portion viewed from the substrate supporting surface is the minimum. In the case of an AC type magnetron sputtering source described later, the center point of two targets arranged adjacent to each other (the center point when the two targets are regarded as one magnetron section as a whole) Interpret as "center point".

The tilt angle is designed to be an optimum angle depending on the construction conditions of the sputtering apparatus on which the target is mounted.
That is, the target surface is inclined within an angle range where the film thickness is uniform. By using such an inclined target, the scattering direction of sputtered atoms is adjusted, and
Various conditions such as the relationship between the distance between the rotating substrate and the target and the angle are adjusted, and the film thickness can be made uniform in the traveling direction of the substrate. Of course, a mode in which the conventional flat plate-shaped target (normal target) and the inclined target of the present invention are mixed in one carousel type sputtering apparatus is also possible.

According to a second aspect of the present invention, the target has a ridge line on the target surface, and inclined surfaces are formed on both right and left sides of the ridge line. That is, in this embodiment, the target surface is formed in a "Λ" shape (so-called roof shape), and the target has a ridge line of the target surface parallel to (or substantially parallel to) the rotation axis of the drum. Held in. By forming slopes with appropriate inclination angles on both the left and right sides of the ridge, it is possible to achieve uniform film thickness in the traveling direction of the substrate.

According to a third aspect of the present invention, the target has a single inclined surface which is inclined in one direction as the target surface. That is, in this embodiment, the target is formed in a so-called wedge shape in its transverse cross section (cross section taken along a plane orthogonal to the rotation axis of the drum). The target surface of the target is inclined in only one direction when viewed from the rotation axis direction of the drum. Even if a target having such a shape is used, the film thickness can be made uniform.

Since the thickness of the target can be made uniform by devising the shape of the target itself and using a target having an inclined surface instead of the conventional flat plate-shaped target, the existing structure such as the magnetron structure and its arrangement can be improved. There is no need to change the design of the main structure of the sputtering device, and the existing equipment can be easily improved.

According to a fourth aspect of the present invention, the magnetron sputter source is an AC type magnetron sputter source that alternately switches the anode / cathode relationship of two adjacent targets arranged at a predetermined frequency. It has a feature.

According to a fifth aspect of the present invention, the magnetron sputter source is a magnetron sputter source in which a target is attached to a single magnetron section. As "a magnetron sputter source in which a target is attached to a single magnetron portion", in addition to a DC (direct current) type magnetron sputter source, R
There are an F (high frequency) type magnetron sputter source, a pulse (a DC voltage is applied at constant time intervals) type magnetron sputter source, and the like.

The AC type magnetron sputter source is capable of higher speed film formation than the magnetron sputter source in which the target is attached to a single magnetron section. Of course, the present invention can also be applied to a sputtering apparatus that realizes high-speed and highly-accurate film formation by using these two kinds of sputtering sources together.

The invention described in claim 6 provides a method invention corresponding to the apparatus invention described in claim 1.
The invention according to claim 7 is directed to the target used in the sputtering apparatus according to claim 1.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a sputtering apparatus and a sputtering film forming method of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a schematic plan view showing the structure of a sputtering apparatus for forming an optical multilayer film according to an embodiment of the present invention.
FIG. 2 is a perspective view of a substrate holder used in this apparatus. The sputtering apparatus 10 shown in FIG. 1 is provided on a drum (not shown in FIG. 1, reference numeral 17 in FIG. 2) and an outer peripheral surface of the drum 17 in a cylindrical chamber 12 having a height of 2 m and a diameter of 1.5 m. A carousel-type sputtering apparatus having a structure in which each of the substrate holders 14 that form a regular dodecagon with a diameter of 1 m is rotatably supported about a central axis 16 of a drum 17 as a rotation center. is there.

The chamber 12, which serves as a reaction chamber, is connected to an exhaust pump (not shown) so that a low pressure necessary for sputtering can be obtained. Further, although not shown, the chamber 12 is provided with a gas supply means for introducing a gas necessary for sputtering and a loading door. The inner wall of the chamber 12 has a shape (inner peripheral shape) that faces the drum 17 at a substantially predetermined interval.

As shown in FIG. 2, the substrate holder 14 is
It is attached to the outer peripheral surface of the cylindrical drum 17,
It rotates integrally with the drum 17 that is rotatably installed.
The shape of the drum 17 is not limited to the cylindrical shape, and may be a polygonal tube shape (the cross section is a polygonal shape) or the like.

As shown in FIG. 1, a substrate 18 for film formation (for example, a glass substrate) is attached to the substrate holder 14, and the substrate holder 14 is rotated by a rotation driving device (not shown) to rotate the drum 17. Constant rotation speed (for example,
Rotate at 6 rpm). Inside the chamber 12, a magnetron sputtering source 20 for forming a low refractive index film and a magnetron sputtering source 30 for forming a high refractive index film are installed. These magnetron sputter sources 20,
Reference numeral 30 denotes a rectangular magnetron sputtering source having a height of 1.2 m, and the substrate 18 passes in front of the magnetron sputtering source 20 or 30 to form a film.

The magnetron sputter source 20 is a conventional magnetron sputter source (hereinafter, referred to as a normal magnetron sputter source) in which a power source (in this example, a DC power source for supplying rectangular wave pulse power) 22 is connected to a single magnetron section 21. 23) and two magnetron parts 24 and 25.
Is connected to one AC power source 26 and is configured by a combination with an AC magnetron sputtering source (hereinafter referred to as AC magnetron) 27 that alternately switches the anode / cathode relationship at a predetermined frequency.

Similarly, the magnetron sputtering source 30 is
A normal magnetron 33 in which a power source 32 is connected to a single magnetron unit 31, and two magnetron units 3
AC with one AC power supply 36 connected to 4, 35
It is configured by a combination with the magnetron 37 of.

The operating principles of the AC magnetrons 27 and 37 are described in JP-A-5-222530 and JP-A-5-22253.
1, JP-A-6-212421, and JP-A-10-130.
No. 830 is disclosed. In summary, AC
With magnetron, two targets are placed side by side,
When one target is the cathode, the other is the anode, and the cathode and anode are exchanged at a frequency of several tens of kHz.This is a magnetron device, and various controls are performed to stabilize and speed up oxide films and nitride films. Can be formed.

The ordinary magnetrons 23 and 33 have a slower film forming speed than the AC magnetrons 27 and 37, but have an advantage that the film thickness can be controlled with high accuracy. The sputtering apparatus 10 shown in FIG. 1 uses AC magnetrons 27 and 37 capable of high-speed film formation in combination with ordinary magnetrons 23 and 33 capable of highly accurate film thickness control to achieve high-speed film formation. Achieves highly accurate film thickness control.

Further, the sputtering apparatus 10 serves as means (film thickness monitoring system) for measuring the film thickness during film formation.
A halogen lamp 40, a monochromator 41, an optical fiber 42, a light projecting head 44, a light receiving head 46, and a light receiving processing unit 48 are provided. The light from the halogen lamp 40 is wavelength-selected by the monochromator 41 and then guided to the projection head 44 through the optical fiber 42. The light projecting head 44 is installed inside the substrate holder 14 (inside the drum 17), and light is emitted from the light projecting head 44 toward the substrate 18. An opening (not shown) for passing light is formed in the central portion of the substrate holder 14 in the vertical direction and has a length of 10 cm in the rotational direction.

Outside the chamber 12, the light receiving head 4 is provided.
6 is installed, and a window portion (not shown) for guiding light to the light receiving head 46 is provided on the outer wall of the chamber 12.
The light transmitted through the substrate 18 is received by the light receiving head 46,
After being converted into an electric signal according to the amount of received light, the received light processing unit 4
Sent to 8. The light reception processing unit 48 performs predetermined signal processing on the received signal and converts it into measurement data for computer input. The measurement data processed by the light receiving processor 48 is sent to a personal computer (hereinafter referred to as a personal computer) 50.

The personal computer 50 is a central processing unit (CP
U), functions as an arithmetic processing unit, and receives light
It also functions as a control device for controlling each sputter power source (22, 26, 32, 36) based on the measurement data received from the server 8. Further, the personal computer 50 controls the light emission of the halogen lamp 40, the rotation control of the substrate holder 14, the pressure control of the chamber 12, the supply control of the introduced gas, and the shutter (not shown in FIG. 1, reference numerals 72, 74, 7 in FIG. 12).
6, 78) can be controlled. The personal computer 50 incorporates programs and various data required for each control.

In FIG. 1, the halogen lamp 40 and the monochromator 41 are used as the light source section of the optical measuring means for film thickness measurement, but the light source section of the optical measuring means used in the film thickness monitoring system is The light source is not limited to the configuration example of FIG. 1, and an appropriate light source is selected according to the measurement target. For example, when manufacturing a WDM (Wavelength Division Multiplexing) filter, wavelength = 1460 to 1580 nm
The tunable laser (tunable wavelength laser) of is used. Further, the present invention is not limited to the mode in which the monochromatic measurement light is used, and there is also a mode in which the monochromatic color is used on the light receiving unit side by using the white measurement light. Compared with the case of using monochromatic measuring light, the mode of monochromaticization on the light receiving portion side has an advantage of less noise.

FIG. 3 shows a target applied to the sputtering apparatus 10 of this example. 3A is a sectional view and FIG. 3B is a plan view. This target 92
Is applied to the sputtering source for low-speed film formation shown by the reference numerals 23 and 33 in FIG. 1, and as shown in FIG. 3, the target upper surface is located at the center position (in the rotation axis direction of the drum 17). It has a so-called roof-shaped (inverted V-shaped) shape that is inclined in both left and right directions with a ridge line 92C) extending along the peak. The inclination angle θ with respect to the horizontal plane is determined by the substrate holder 14
Optimum to achieve uniform film thickness distribution depending on the number of corners, diameter, substrate size, substrate-target distance (designed average distance), etc. Designed at various angles.

The conventional target has a flat plate shape with a constant plate thickness, and the substrate surface and the target surface are in a parallel state when the substrate and the target have a positional relationship facing each other (see FIG. 26A). ). On the other hand, in the target 92 shown in FIG. 3, when the substrate and the target face each other in a positional relationship, the target surface has a slight angle (tilt angle θ) with respect to the substrate surface.

When the target 92 configured as described above is used, sputtered atoms are emitted from the target inclined surfaces 92A and 92B, as shown in FIGS. Atomic density) spreads in the normal direction of the target inclined surfaces 92A and 92B (that is,
V-shaped emission). In addition, the distances and the directions (vector <r>) of the target inclined surfaces 92A and 92B, which are the atomic emission surfaces, to the respective positions of the substrate 18, and the relationship between the angle φ formed by the vector <r> and the substrate surface, etc. As the conditions are balanced in a good balance, as shown in FIG.
The film thickness can be made uniform in the traveling direction of the substrate 18 (horizontal direction in the drawing).

FIG. 5 is a graph comparing the film thickness distribution by the film formation using the tilted target 92 according to the present invention with the film thickness distribution by the film formation using the conventional flat plate target (normal target). Is. The graph shown in the figure is
It is an experimental result obtained under the following implementation conditions. That is, in the sputtering device 10 shown in FIG.
Each of the board holders that make up the regular dodecagon is used to
The distance between the targets was 60 mm, the substrate size was 10 cm square, and the result was obtained by attaching the "normal target" to the sputtering source for low-speed film formation indicated by reference numeral 23 (or 33), and
This is the result of deposition with the tilted target 92 (tilt angle θ = 5 °) attached.

As is apparent from FIG. 5, in the case of the normal target, the film thickness in the peripheral portion is larger than that in the center of the substrate, but in the case of the inclined target 92 according to the present invention,
The film thickness distribution in the traveling direction is made uniform.

Similar to the sputtering source for low-speed film formation described above, the sputtering sources 94 and 37 shown in FIG.
95 applies. Sectional view of FIG. 6A and FIG. 6B
The target 94 shown in the plan view of FIG.
It is used as the target shown in 64. In addition, FIG.
The targets 95 shown in (c) and (d) are used as the targets shown by reference numerals 54 and 63 in FIG. In a sputtering source (AC magnetron) for high-speed film formation, even if the target surfaces of two targets arranged adjacent to each other are tilted in the same direction, it is not possible to achieve uniform film thickness. The targets are arranged in a line-symmetrical (or substantially line-symmetrical) relationship with each other.

The tilt angle θ of each of the targets 94 and 95 shown in FIG. 6 is designed to be an optimum angle depending on the specific conditions of the sputtering apparatus. As described with reference to FIG. 1, the AC magnetron used for high-speed film formation has an anode / target of a target mounted on two adjacent magnetron parts.
Since the cathode relations are alternately switched and can act as one sputtering source as a whole, as shown in FIG. 6, the left and right targets 94 and 95 each have a single inclined surface (only one side is inclined). , So-called wedge shape, a roof-shaped target surface equivalent to the target 92 described in FIGS. 3 and 4 is formed when these two targets 94 and 95 are used in combination. The operation of the targets 94 and 95 shown in FIG. 6 is the same as that of FIG.

FIG. 7 shows the tilted target 9 shown in FIG.
It is a graph which compared the film thickness distribution by the magnetron of AC using 4 and 95, and the film thickness distribution by the magnetron of AC using the conventional flat type target (normal target). The graph shown in FIG. 7 is an experimental result obtained under the following implementation conditions. That is, in the sputtering apparatus 10 shown in FIG. 1, each substrate holder that forms a regular dodecagon with a diameter of 1 m is used, and a substrate-target distance of 6
0 mm, substrate size 10 cm square, code 27 (or 3
The result of film formation by mounting the "normal target" on the sputtering source for high-speed film formation shown in 7) and the results obtained by mounting the tilted targets 94 and 95 (both of which are tilt angles θ = 5 °). It is the result of performing the film.

As is apparent from FIG. 7, the film thickness of the peripheral portion of the normal target is larger than that of the center of the substrate, but in the case of the inclined target according to the present invention, the distribution of the film thickness in the traveling direction becomes uniform. To be done.

Instead of the targets 94 and 95 shown in FIG. 6, the targets 96 and 97 shown in FIG. 8 may be used. That is, the target 96 shown in FIGS. 8A and 8B is replaced with the target 94 shown in FIG.
The target 97 shown in (c) and (d) is replaced with the target 95 of FIG. As shown in FIG. 8, it is also possible to adopt a mode in which the upper surfaces of the left and right targets 96 and 97 applied to the AC magnetron are each formed into a roof shape (Λ shape). In this case, the inclination angles (θ1) of the inner inclined surfaces 96A and 97A and the inclination angles (θ2) of the outer inclined surfaces 96B and 97B are designed to have appropriate values depending on the configuration conditions of the sputtering apparatus 10. It As a result, the distribution of the film thickness in the traveling direction is made uniform.

Next, the operation of the sputtering apparatus 10 configured as described above will be described. The examples described below
SiO ₂ as a low refractive index film and TiO ₂ as a high refractive index film
An example of forming a film by reactive sputtering will be described.

First, each magnetron portion 31 of the magnetron sputtering source 30 for forming the high refractive index film shown in FIG.
Ti targets 52, 53 and 54 are attached to 34 and 35, and S is attached to each magnetron portion 21, 24 and 25 of the magnetron sputtering source 20 for forming a low refractive index film.
i targets 62, 63, 64 are attached.
The size of the target is 1.1m high and 15 wide
cm and AC have a height of 1.1 m and a width of 10 cm, respectively.

Further, each substrate holder 14 has a
9 glass substrates 18 each having a thickness of 1.1 mm and 10 cm square,
Install in the vertical direction. Next, the chamber 12 is roughly evacuated to 5 Pa by a rotary pump, and then evacuated to 1 × 10 ⁻³ Pa by a cryopump.

Next, 100 sccm of argon gas and 30 sccm of oxygen gas are introduced into the chamber 12 through the mass flow controller. The gas pressure at that time was 0.4 Pa.

An ordinary magnetron 23 to which a Si target 62 is attached in order to form a SiO ₂ film.
DC pulse power of DC 10kW (frequency 50kHz
), AC 20 kW of electric power is supplied to the AC magnetron 27 to which the Si targets 63 and 64 are attached, and a shutter (not shown in FIG. 1) arranged between the target and the substrate is closed for 5 minutes of standby. Discharge,
After that, both shutters are opened to form a film.

During film formation, the transmittance of the substrate 18 on the substrate holder 14 is measured by the above film thickness monitoring system. Since the transmittance of the substrate 18 changes according to the film thickness to be formed, the film thickness can be grasped by monitoring the transmittance. For reference, FIG. 9 shows a signal example of the film thickness monitor in this embodiment.

Film formation is performed while monitoring the film thickness by a film thickness monitoring system, and when the film thickness reaches 90% of the designed film thickness, the power supply to the AC magnetron 27 shown in FIG. The film is formed only by the magnetron 23. During film formation, the measurement result of the transmittance is calculated by the personal computer 50, and the information of the measurement result is fed back to each of the power supplies 26 and 22 to improve the uniformity of the film in the rotation direction of the substrate 18 and at the same time Control so that the thickness is the designed thickness. It is also possible to adjust the film formation by controlling the rotation speed of the substrate holder 14 and the opening degree (opening / closing amount) of the shutter.

Next, in order to form a TiO ₂ film, Ti
A direct current of 15 kW is supplied to an ordinary magnetron 33 to which the target 52 is attached, and an alternating current of 30 kW is supplied to an AC magnetron 37 to which the Ti targets 53 and 54 are attached, in the same manner as the SiO ₂ film forming step. After performing pre-discharge for 5 minutes, both shutters are opened to form a film. Also in the case of the TiO ₂ film, the supply of power to the AC magnetron 37 is stopped when the film is formed to 90% of the designed film thickness, and the film is formed only by the normal magnetron 33. During film formation, the measurement result of the transmittance was measured by each power source 36, 3
The point of feeding back to 2 to improve the uniformity of the film and accurately control the film thickness is the same as the film forming process of the SiO ₂ film.

The above-described SiO ₂ film forming step and TiO 2
Repeated _two film deposition process, the glass (substrate) / Si
O ₂ (94.2 nm) / TiO ₂ (57.3 nm) / SiO ₂ (94.2
_{nm) / TiO 2 (57.3nm)} / SiO 2 (94.2nm) / Ti
O ₂ (57.3 nm) / SiO ₂ (188.2 nm) / TiO ₂ (5
7.3 nm) / SiO ₂ (94.2 nm) / TiO ₂ (57.3 nm) /
SiO ₂ (94.2 nm) / TiO ₂ (57.3 nm) / SiO
A 13-layer bandpass filter of ₂ (94.2 nm) was prepared. It should be noted that such a film structure is glass / (SiO ₂ 94.
2 / TiO ₂ 57.3nm) ³ / SiO ₂ 188.2nm / (TiO
₂ 57.3 nm / SiO ₂ 94.2 nm) ³ .

FIG. 10 shows the spectral characteristic of the bandpass filter thus prepared. In the figure, the black circles (●) are design values, and the solid line shows the measurement results of the spectral characteristics of the bandpass filter prepared according to this example.

By using the sputtering apparatus 10 according to the present embodiment described above, it becomes possible to form a multilayer film on the substrate 18 at a high speed and to control the film thickness with high accuracy. Dichroic mirrors can be manufactured with high productivity.

In the case of the above embodiment, the AC magnetron and the normal magnetron are simultaneously operated until the film thickness is 90% of the designed film thickness, and thereafter the discharge of only the AC magnetron is stopped and the discharge of the normal magnetron is continued. However, the control method is not limited to this example. For example, 90
It is also possible to use a control method in which a film is formed only with an AC magnetron up to%, and then a film is formed only with a normal magnetron. Of course, the timing of stopping the AC magnetron is not limited to the time of film formation of 90% of the designed film thickness, and can be set appropriately.

In the above embodiment, the film thickness is controlled while monitoring the film thickness during the power supply to the AC magnetron (the period until 90% of the designed film thickness is reached). Although the film thickness is monitored during the power supply to the IC, the film thickness is not controlled, and the time is managed based on the film thickness prediction value based on the input power and the sputtering time that has been investigated in advance. Power to the magnetron may be turned off. Then, at the time when film formation is started only with a normal magnetron, the film thickness control (for example,
It is also possible to adopt a mode in which the power source is fed back and controlled.

The film thickness may be measured on the substrate 18 (measurement point) at one position in the central portion of the substrate 18 or in the lateral direction along the rotation direction (that is, in the "traveling direction").
May be measured at a plurality of points to measure the film thickness distribution in the lateral direction. Further, it is possible to arrange a plurality of film thickness measuring means (the light emitting head 44 and the light receiving head 46) in the vertical direction along the rotation axis of the substrate holder 14 to measure the film thickness in a plurality of positions in the vertical direction. Is.

In the sputtering apparatus 10 shown in FIG. 1, the light projecting head 44 is arranged inside the substrate holder 14 and the light receiving head 46 is arranged outside the chamber 12, but the light projecting head 44 and the light receiving head 46 are arranged. A mode in which the relationships are interchanged is also possible.

Next, a modification of the above embodiment will be described.

FIG. 11 is a schematic view of a sputtering apparatus 70 for forming an optical multilayer film according to another embodiment. 11, those parts that are the same as those corresponding parts in FIG. 1 are designated by the same reference numerals, and a description thereof will be omitted. In FIG. 11, the halogen lamp 40, the monochromator 41, and the optical fiber 4 are shown for simplification of the drawing.
2. The configurations of the light receiving processing unit 48, the personal computer 50, etc. are not shown (the same applies to FIGS. 12 and 13).

The sputtering apparatus 70 shown in FIG. 11 has ordinary magnetrons 23 and 33 and an AC magnetron 2 for both low refractive index film formation and high refractive index film formation.
Installation locations of 7, 37 are separated, and each magnetron (2
3, 33, 27, 37) and the substrate 18 are provided with shutters 72, 74, 76, 78 that can be opened and closed, respectively. In the same figure, a state in which a low refractive index film is formed is shown, and a shutter 7 arranged in front of a normal magnetron 23 for forming a low refractive index film and an AC magnetron 27.
2, 76 are open, and shutters 74, 78 arranged in front of the normal magnetron 33 for forming a high refractive index film and the AC magnetron 37 are closed.

In the figure, when the desired film thickness is obtained by the reactive sputtering process, the shutters 72 and 76 are released.
The film forming reaction can be surely stopped by closing, and the target deterioration can be prevented by closing the shutters 74 and 78 of the sputter source not used for film forming. After forming the low refractive index film, the shutters 74 and 78 are opened to form the high refractive index film.

As shown in FIG. 12, the anti-adhesion plates 8 are provided on both sides of each magnetron (23, 33, 27, 37).
A mode in which 0 is arranged is also preferable. The deposition preventive plate 80 has a function of preventing the plasma from wrapping around, restricts the film forming action only to the substrate 18 located in front of the magnetron portion, and prevents the film forming on the other substrates (adjacent substrates). To do. Since the left and right sides of each magnetron sputtering source are individually surrounded by the deposition preventive plate 80, it is possible to prevent impurities from adhering to the target without being affected by the plasma from other magnetron sputtering sources.

FIG. 13 is a diagram showing variations in the arrangement of cathodes. In practicing the present invention, FIG.
As shown in (a) to (d), various configurations are possible for the cathode arrangement. In the figure, the symbol "H" indicates the cathode (magnetron portion) for forming the high refractive index film,
“L” indicates a cathode (magnetron portion) for forming a low refractive index film. FIG. 13A shows an example in which the cathode for forming the high refractive index film and the cathode for forming the low refractive index film are arranged apart from each other, as described in FIG. FIG. 13B shows an example in which a cathode for forming a high refractive index film and a cathode for forming a low refractive index film are adjacent to each other in order to avoid plasma interference. FIG. 6C shows an example in which the monitor position is set at a position apart from the cathode in order to avoid interference with the film thickness monitor. FIG. 3D shows an example in which a transmissive monitor and a reflective monitor are used together as a means for measuring the film thickness.

The transmissive monitor, as described with reference to FIG.
It is a means for measuring the transmittance of the substrate 18 using the light projecting head 44 and the light receiving head 46. The reflective monitor has a head 8
This is a means for irradiating light from 2 toward the substrate 18, receiving the reflected light by the head 82, and measuring the reflectance by analyzing the received light signal. Although not shown, the measurement light is guided to the reflective monitor head 82 using the halogen lamp 40, the monochromator 41 and the optical fiber 42 similar to those in FIG. 1, and the light (reflected light) received by the head 82 is It is sent to the personal computer 50 via the received light signal processing means.

When a transmissive monitor and a reflective monitor are used together as shown in FIG. 13D, control is performed by using the measurement result of the reflectance in the region where the transmittance is low, and the region where the transmittance is high is the transmittance. An embodiment in which control is performed using the measurement result of is preferable. That is, a transmittance (judgment reference value) that is a reference for judging whether to switch the transmission type / reflection type control is set in advance, and when the transmittance is lower than the judgment reference value, the reflectance The control is performed using the measurement result, and when the transmittance is higher than the determination reference value, the control is performed using the measurement result of the transmittance.

FIG. 14 shows a target material and a film material which are mainly used in implementing the present invention. As the low refractive index material, the Si target described above is used.
Other than the mode of forming the O ₂ film, the mode of forming the SiO ₂ film using a SiC target, and the mode of forming the oxide film composed of SiO ₂ and Al ₂ O ₃ using the alloy of Si and Al as the target. and so on.

As for the high refractive index material, in addition to the mode of forming the TiO ₂ film by using the Ti target described above, FIG.
As shown in FIG. 4, various film materials can be formed by selecting the target material. Also, FIG.
Although not shown in FIG. 4, a target material may be an oxide, a nitride, an oxynitride, a carbide, or the like, which can be DC sputtered, in addition to the metal (conductive material).

FIG. 15 shows an example of a substrate used for implementing the present invention. As shown in the figure, WD
OHARA WMS as a substrate for the M filter
(Crystalline glass) is used. Further, as the substrate for other optical filters, various kinds of glass shown in FIG. 15, such as white plate glass, hard glass, artificial quartz, etc., are used according to the application.

Next, still another embodiment of the present invention will be described.

FIG. 16 is a block diagram of a sputtering apparatus 100 for forming an optical multilayer film according to another embodiment. In the figure, those parts which are the same as or similar to those of the device shown in FIGS. 1 and 11 are designated by the same reference numerals, and a description thereof is omitted. In FIG. 16, a normal magnetron 23 described as “low-speed film formation 1”
And AC magnetron 27 described as “high-speed film formation 1”
Is a sputtering source for forming a low refractive index film. The ordinary magnetron 33 described as "low speed film formation 2" and the AC magnetron 37 described as "high speed film formation 2" are sputtering sources for forming a high refractive index film.

Each of these magnetrons 23, 27, 33,
37 is its center line 23A, 27A, 33A, 37A
(The line passing through the center of each magnetron and perpendicular to the target support surface) is the center of rotation of the substrate holder 14 (center axis 16)
It is arranged so as to intersect with the direction of the center of rotation. As shown in FIG. 16, if the inscribed circle of the regular dodecagon formed by the substrate holder 14 is 15A and the circumscribed circle is 15B, the substrate holder 14 and each magnetron 23, 2
The distances to 7, 33, and 37 vary in the range from the inscribed circle 15A to the circumscribed circle 15B as the substrate holder 14 rotates. In the figure, the center point of the substrate supporting surface of the substrate holder 14 and the magnetrons 23, 27 seen from the substrate supporting surface,
The state when the distance between the center points of 33 and 37 is the minimum (the state where the substrate and the target face each other) is shown.

The shutters 72, 74, 76, 78 are constructed so as to be opened and closed by the rotational force of the roller 79, respectively, and the shutters 72, 74 corresponding thereto are interlocked with the control of the sputter power sources 22, 26, 32, 36. , 76, 7
The opening and closing of 8 is controlled.

When the halogen lamp 40 is used as the light source of the film thickness monitoring system, as shown in FIG.
A chopper 84 is arranged at the output of the monochromator 41. By periodically blocking the output light (monochromatic light) from the monochromator 41 by the chopper 84, the CPU 51 in the personal computer 50 performs a calculation for removing the noise component of the light source. The light reception processing unit 48 includes a chopper 84.
The CPU 51 outputs a modulation signal for operating the
Control amplifier (described as reference numeral 49 in FIG. 17).

FIG. 17 is a block diagram showing the detailed structure of a film thickness monitoring system using a halogen lamp. The halogen lamp 40 receives power from the lamp power supply 86 and emits light. The light (white light) emitted from the halogen lamp 40 is monochromatic by the monochromator 41 and then enters the chopper 84. Chopper 84
Operates in accordance with the modulation signal supplied from the control amplifier 49, and the modulated monochromatic light is output via the chopper 84. The modulated monochromatic light is split into two by a light splitting means (half mirror or the like) 87, one of which is introduced into the chamber 12 serving as a film formation space and is applied to the substrate 18 (corresponding to the measurement sample) to be measured. Is irradiated. The light transmitted through the substrate 18 enters the photomarmeter 85,
It is converted into a voltage signal according to the amount of transmitted light. The voltage signal output from the photomultimeter 85 is converted into a digital signal by the control amplifier 49, and then CP
It is sent to U51.

The other split light split by the light splitting means 87 enters the photodiode 88 as light for obtaining light source information. The control amplifier 49 gives a modulation signal to the photodiode 88 in synchronization with the chopper 84, and the photodiode 88 outputs a voltage signal according to the light amount of the light source direct light emitted from the monochromator 41. The voltage signal output from the photodiode 88 is converted into a digital signal in the control amplifier 49 and then sent to the CPU 51.

The CPU 51 performs calculations such as the calculation of the transmittance, the calculation of the optical film thickness, the calculation of the film forming rate, etc., based on the data of the transmitted light received from the control amplifier 49 and the data of the direct light of the light source.

The white light of the halogen lamp 40 is not monochromatic by the monochromator 41 and then is applied to the substrate 18, but the white measuring light may be applied to the substrate 18 and monochromatic on the light receiving side. In this case, a monochromator is arranged in front of the light receiving head 46. In the aspect in which the light-receiving side is monochromatic, noise is reduced as compared with the aspect in which monochromatic measurement light is used.

Instead of the system configuration shown in FIG. 17, the system configuration shown in FIG. 18 is also possible. 17 in FIG.
The same or similar parts are designated by the same reference numerals, and the description thereof will be omitted. In the example shown in FIG. 18, the variable wavelength laser 90 is used for the light source unit, and the output wavelength is selected by the modulation signal from the control amplifier 49. Moreover, since the output of the tunable wavelength laser 90 is stable, FIG.
It becomes unnecessary to monitor the direct light of the light source described in the above.

Next, another embodiment relating to the film thickness monitoring method will be described.

For the target optical film thickness nd (where n is the refractive index of the film and d is the physical film thickness), the following equation (1)

[0079]

## EQU1 ## nd = mλ / 4 (1) However, m is a positive integer and λ is the wavelength of light.

When a light having a wavelength λ satisfying the above conditions is used as the measuring light and the measuring light is vertically incident on the substrate on which the film is being formed (incident angle = 0 °), and its transmittance (or reflectance) is measured. , When the optical film thickness of the formed film is an integral multiple of ¼ of the measurement wavelength λ (that is, when the above expression (1) is satisfied), the transmittance (or reflectance) takes an extreme value. .

FIG. 19 shows that TiO ₂ (n =
6 is a graph showing a change in transmittance with respect to a measurement wavelength of 550 nm when the film of 2.4) is formed. In the figure,
The horizontal axis represents the film thickness (physical film thickness d) formed, and the vertical axis represents the transmittance. As shown in the figure, the optical film thickness nd is λ /
When it is an integral multiple of 4, the transmittance shows an extreme value.

Utilizing such a phenomenon, light having a measurement wavelength λ that satisfies the above equation (1) for the target film thickness is used,
The film thickness can be monitored and the film formation can be controlled.

However, in the case of the carousel type sputtering apparatus as shown in FIG. 1 and FIG. 17, since the substrate holder 14 is rotating, the incident angle of the measurement light and the measurement position (monitor position) always change. There is. When the incident angle of the measurement light changes and the value of the transmittance changes significantly, it becomes difficult to perform accurate measurement and film formation control. In fact, in the case of a film structure of 10 layers or more, the position of the extreme value of the transmittance and the transmittance are changed due to the change of the incident angle of the measurement light. Difficult to do.

A method for solving the above problem will be described below by using a concrete example.

FIG. 20 shows glass / (TiO ₂ 92.9 nm / S
iO ₂ 57.3 nm) ⁷ / TiO ₂ 185.8 nm / (SiO ₂ 57.3 nm)
nm / TiO ₂ 92.9 nm) ⁷ layers 29 layers 1 cavity bandpass filter (center wavelength 550 nm)
5 is a graph showing changes in transmittance due to measurement light having a wavelength of 550 nm when a film was formed.

Focusing on the optical properties of the film at each stage in the film forming process, as shown in FIG.
It can be divided into sections.

Section A (first layer to twelfth layer) is a section in which the transmittance greatly depends on the film thickness and hardly depends on the incident angle of the measurement light. In fact, the transmittance at 0 ° and the transmittance at 10 ° are almost the same. Section B (13th layer ~
The eighteenth layer) is a section in which the transmittance hardly depends on the film thickness and the incident angle, and the change in the transmittance is small. Section C
The (19th to 29th layers) is a section in which the transmittance depends on both the film thickness and the incident angle. Transmittance at 0 ° incidence and 10 °
It is significantly different from the incident transmittance, and the transmittance at 10 ° is a small value (less than 10%). Also, section D
The (29th layer) is a section for adjusting the optical characteristics.

Suitable monitoring and film formation control can be carried out for each section to improve the monitoring accuracy and the controllability of the optical properties of the film. The control method in each section is shown below.

<Film Thickness Control in Section A> FIG. 21 is a graph showing the angular dependence of the transmittance data obtained during the film formation of the first layer, the second layer, the third layer and the ninth layer. Is. In the section from the first layer to the twelfth layer (section A), as shown in FIG. 21, the transmittance hardly changes even if the incident angle changes. Therefore, by taking the average value of the transmittance data continuously acquired during the rotation of the substrate within the range of the incident angle of ± 5 ° to ± 15 °, the transmittance is almost the same as that at the time of vertical incidence. You can get the value. From the obtained transmittance at normal incidence, calculate the time when the transmittance reaches the extreme value, and stop the film formation when the transmittance value actually reaches the extreme value. Can be controlled. Since the substrate 18 to be measured is rotating, the center of the substrate 18 is measured at 0 ° incidence. However, as the incident angle increases, the position displaced from the center of the substrate is monitored. . However, by using the inclined target described in FIGS. 3 to 8, the film thickness distribution in the traveling direction of the substrate is made uniform, and the film thickness is accurately measured even if the monitor position changes. can do.

<Film Forming Method in Section B> 13th Layer to 1st Layer
In the section up to 8 layers, the value of the transmittance is small, and the change in the transmittance with the increase of the film thickness is small, so that it is difficult to control the film thickness with high accuracy. Therefore, in this section B, the transmittance collects data only as reference data, and mainly
From the relationship between the amount of change in transmittance and the film formation time in the film formation process from the first layer to the twelfth layer, the current film formation rate is calculated,
The film thickness is controlled by the film formation time by a method of stopping the film formation when the desired film thickness is reached.

<Film Forming Method in Section C> FIG. 22 is a graph showing the angular dependence of the transmittance of the 28th and subsequent layers. First
In the section from the 9th layer to the 29th layer (section C), as shown in FIG. 22, since the value of the transmittance changes depending on the angle, the control method like the section A becomes difficult. However, as shown in FIG. 22, the point indicating the transmittance at the incident angle of 0 ° is the point at which the transmittance curve obtained by the measurement intersects with the target axis of the line target. Even if there is no strict trigger indicating, the transmittance at the time of vertical incidence (incident angle 0 °) can be obtained by calculating the transmittance data obtained by the measurement. Further, it is possible to determine the film thickness having the extreme value from the peak position of the transmittance curve obtained by the measurement, the rate of change with respect to the angle or the area (that is, the shape of the curve). Further, by approximating the transmittance curve obtained by changing the angle, the spectral transmittance on the long wavelength side of the measurement wavelength λ can be obtained as shown in FIG.

FIG. 23 is a graph of the spectral transmittance obtained by approximately converting the data of the transmittance curve acquired in the incident angle range of 0 ° ± 10 °. By using the data in the range of ± 10 °, the long-wavelength side of the measurement wavelength λ (= 550 nm), that is, the spectral transmittance of 550 nm ≦ λ ≦ 552.35 nm can be predicted. As shown in FIG. 23, this predicted value matches the actual spectral transmittance (spectral transmittance confirmed by the experiment) with extremely high accuracy.

<Film Forming Method in Section D> Since the actual film thickness has an error with respect to the target film thickness in the process of sequentially forming the film from the first layer, desired optical characteristics can be obtained. Not always. In such a case, a layer for modifying the optical characteristics is provided during the film forming process. In this example, the layer for correction is the 29th layer (final layer), and this is the section D.

In the section D, the transmittance is measured by using the measuring light having a wavelength slightly shifted from the measuring wavelength (λ = 550 nm) satisfying the expression (1) to the short wavelength side. In this example, the measurement is performed with the measurement light having the wavelength λ = 549 nm.
A signal as shown in 4 was obtained. Using the measurement data obtained in this way, an approximate conversion is performed in the same manner as in the above-mentioned section C, so that the measurement wavelength λ = 549 nm as shown in FIG.
Long wavelength side, ie, 549 nm ≦ λ ≦ 552.35 nm
The spectral transmittance of can be obtained.

The spectral transmittance thus obtained matches the actual spectral transmittance with extremely high accuracy. By obtaining the spectral transmittance profile as shown in FIG. 25 during the film forming process, the “center wavelength”, the “transmittance at a specific wavelength”, and the “bandwidth” that are the optical specifications of the bandpass filter are obtained. Can be observed. This makes it possible to correct the film thickness (that is, optical characteristics) while checking to meet the target specifications.
Product yield (non-defective product rate) can be improved.

In the above example, the light of λ = 549 nm was used as the measurement light slightly shifted from the measurement wavelength λ = 550 nm to the short wavelength side, but the wavelength of the light used for the measurement is the wavelength of the film to be measured. It can be switched according to the type and the number of stages (the number of layers).

In the above embodiment, an example of calculating the transmittance is described, but in the case of implementing the present invention, the reflectance may be calculated instead of or in addition to the transmittance.

Sputtering apparatus 1 in the above-described embodiment
In Nos. 0, 70 and 100, tilted targets were mounted on all the magnetrons in the apparatus, but when the present invention is carried out, a mode in which normal targets and tilted targets are mixed in one apparatus is also possible. .

[0099]

As described above, according to the present invention, in the carousel type sputtering apparatus, a tilted target is used instead of or in combination with the conventional flat plate-shaped target. It is possible to make the film thickness uniform in the traveling direction of. Further, according to the aspect of the present invention, the optimum tilt angle is designed according to the configuration conditions of the sputtering apparatus, and the target itself is processed to form the slope of the tilt angle. With regard to (2), it is not necessary to change the design of the main configuration of the existing sputtering apparatus, and it is possible to easily achieve uniform film thickness.

As disclosed in Japanese Patent Application Laid-Open No. 3-253568, a sputtering method (apparatus) using two cathodes and two power supplies for applying electric power to the cathodes is used to make the film thickness uniform. In this case, it is difficult to reduce the difference in factors affecting the film formation rate between the cathodes. However, according to the present invention, the cathode-power supply system for achieving uniform film thickness has only one power supply. Therefore, there is an advantage that the influence on the above-mentioned factors is small, the film thickness can be made uniform more easily, and the apparatus configuration can be made compact and inexpensive as compared with the conventional one.

[Brief description of drawings]

FIG. 1 is a schematic plan view showing the configuration of a sputtering apparatus for forming an optical multilayer film according to an embodiment of the present invention.

FIG. 2 is a perspective view of a substrate holder used in the apparatus shown in FIG.

3A is a sectional view of a target according to an embodiment of the present invention, and FIG. 3B is a plan view thereof.

FIG. 4 is a schematic diagram illustrating the operation of an inclined target.

FIG. 5 is a graph comparing the film thickness distribution by film formation using the inclined target shown in FIG. 4 with the film thickness distribution by film formation using a conventional flat plate target (normal target).

FIG. 6 is a block diagram of a tilted target applied to a sputtering source for high-speed film formation.

FIG. 7 is a graph comparing the film thickness distribution by film formation using the inclined target shown in FIG. 6 with the film thickness distribution by film formation using a conventional flat plate target (normal target).

FIG. 8 is a diagram showing another configuration example of a tilted target applied to a sputtering source for high-speed film formation.

FIG. 9 is a graph showing a signal example of a film thickness monitor in this embodiment.

FIG. 10 is a graph showing the spectral characteristics of the bandpass filter created according to this example.

FIG. 11 is a schematic diagram of a sputtering apparatus for forming an optical multilayer film according to another embodiment of the present invention.

FIG. 12 is a schematic diagram showing an example in which a deposition preventive plate is added to the sputtering apparatus shown in FIG.

FIG. 13 is a diagram showing examples of various cathode arrangements.

FIG. 14 is a diagram illustrating target materials and film materials mainly used in the present invention.

FIG. 15 is a diagram showing an example of a substrate used in the present invention.

FIG. 16 is a configuration diagram of a sputtering apparatus for forming an optical multilayer film according to another embodiment of the present invention.

FIG. 17 is a block diagram showing a detailed configuration of a film thickness monitoring system using a halogen lamp.

FIG. 18 is a block diagram showing a detailed configuration of a film thickness monitoring system using a variable wavelength laser.

FIG. 19 is a graph showing changes in light transmittance at a wavelength of 550 nm when a TiO ₂ film is formed on a glass substrate.

FIG. 20: Glass / (TiO ₂ 92.9 nm / SiO ₂ 57.3n
m) ⁷ / TiO ₂ 185.8 nm / (SiO ₂ 57.3 nm / TiO _2
2 92.9 nm) A graph showing the change in transmittance due to the measuring light of wavelength 550 nm when a 29-layer 1-cavity bandpass filter (center wavelength 550 nm) having a film structure of ⁷ was formed.

21 is a graph showing the angle dependence of the transmittance data obtained during film formation in the section A in FIG.

22 is a graph showing the angular dependence of the transmittance measured during the film formation of the 28th and subsequent layers in FIG.

FIG. 23: Incidence angle 0 ° ± 1 using a measurement wavelength of 550 nm
Graph of spectral transmittance obtained by approximating conversion of transmittance curve data acquired in the 0 ° range

FIG. 24: Incidence angle 0 ° ± 1 using measurement wavelength 549 nm
Graph showing data of transmittance curve acquired in the range of 0 °

FIG. 25 is a graph of spectral transmittance obtained by approximate conversion of the data shown in FIG.

FIG. 26 is a schematic diagram illustrating nonuniformity of film thickness distribution in a conventional carousel-type sputtering apparatus.

[Explanation of symbols]

10 ... Sputtering device, 12 ... Chamber, 14 ... Substrate holder, 16 ... Central axis (rotating shaft), 17 ... Drum, 18
... Substrate, 20 ... Magnetron sputter source (magnetron sputter source for forming a low refractive index film), 21 ... Magnetron section, 22 ... Power source, 23 ... Normal magnetron, 23A ...
Center line, 24, 25 ... Magnetron section, 26 ... AC power supply, 27 ... AC magnetron, 27A ... Center line, 30
... magnetron sputter source (magnetron sputter source for forming a high refractive index film), 31 ... magnetron part, 32 ... power source, 33 ... normal magnetron, 33A ... center line, 3
4, 35 ... Magnetron section, 36 ... AC power supply, 37 ... A
C magnetron, 37A ... center line, 40 ... halogen lamp, 41 ... monochromator, 42 ... optical fiber, 4
4 ... Light emitting head, 46 ... Light receiving head, 48 ... Light receiving processing section, 49 ... Control amplifier, 50 ... Personal computer, 51
... CPU, 52, 53, 54 ... Ti target, 62,
63, 64 ... Si target, 70 ... Sputtering device, 7
2,74,76,78 ... Shutter, 80 ... Adhesion prevention plate, 8
2 ... Reflective monitor head, 84 ... Chopper, 85 ... Photomalmeter, 86 ... Lamp power supply, 87 ... Light splitting means, 88 ... Photodiode, 90 ... Variable wavelength laser, 92 ... Target, 92A, 92B ... Target tilt Surface, 92C ... Ridge line, 94, 95, 96, 97 ... Target, 96A, 96B, 97A, 97B ... Inclined surface, 10
0 ... Sputtering device

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H048 GA04 GA12 GA34 GA60                 4K029 AA09 BA46 BA48 BB02 BC07                       BD00 CA05 CA06 CA15 DC03                       DC05 DC12 DC16 DC39 EA09                       JA02

Claims (7)

[Claims] 1. A drum having a polygonal or circular cross section is rotatably installed in a chamber, a substrate holder is provided on an outer peripheral surface of the drum, and a target and the target are held inside a chamber wall. In the carousel-type sputtering apparatus having a structure in which a magnetron sputtering source including a magnetron unit is arranged, and the target is held by the magnetron unit so as to be parallel to the rotation axis of the drum, the target is the substrate holder. The target surface has a predetermined inclination angle so that the target surface facing the substrate is not parallel to the surface of the substrate when the target surface faces the substrate to be mounted. Sputtering equipment. 2. The sputtering apparatus according to claim 1, wherein the target has a ridge line on the target surface, and inclined surfaces are formed on both right and left sides of the ridge line. 3. The sputtering apparatus according to claim 1, wherein the target has a single inclined surface that is inclined in one direction as the target surface. 4. The magnetron sputter source is an AC type magnetron sputter source which alternately switches the anode / cathode relationship of two targets arranged adjacent to each other at a predetermined frequency. The sputtering apparatus according to any one of 1. 5. The magnetron sputter source is a magnetron sputter source in which a target is attached to a single magnetron portion.
The sputtering apparatus according to 1. 6. A drum having a polygonal or circular cross section is rotatably installed in a chamber, a substrate holder is provided on an outer peripheral surface of the drum, and a target and the target are held inside a chamber wall. A magnetron sputter source including a magnetron unit is disposed, and the target is formed by using a carousel type sputtering apparatus having a structure in which the target is held by the magnetron unit so as to be parallel to the rotation axis of the drum. A method, wherein when the target has a positional relationship facing a substrate attached to the substrate holder, the target surface facing the substrate is not parallel to the substrate surface. A sputtering film forming method, characterized in that a target having an inclined surface is used. 7. A drum having a polygonal or circular cross section is rotatably installed in a chamber, a substrate holder is provided on an outer peripheral surface of the drum, and a target and the target are held inside a chamber wall. A target applied to a carousel type sputtering apparatus having a structure in which a magnetron sputtering source including a magnetron unit is disposed, and the target is held by the magnetron unit so as to be parallel to the rotation axis of the drum. The target has a predetermined inclination angle such that the target surface facing the substrate is not parallel to the substrate surface when the target has a positional relationship facing the substrate attached to the substrate holder. Target that is characterized by.