JP2003012888A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition capable of finally preventing short circuit even in remelting of solder when performing the resin sealing suitable to gage reduction and miniaturization, and excellent in productivity. SOLUTION: This epoxy resin composition comprises an epoxy resin, a curing agent, a curing accelerator, a silicone component and an inorganic filler as essential components. The cured product has 0.5 to 3.0 GPa flexural modulus. Since the cured product absorbs stress due to thermal expansion of the solder, invasion of the solder into unnecessary sites is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition used for encapsulating a semiconductor chip, and a semiconductor device using this epoxy resin composition.

[0002]

2. Description of the Related Art In manufacturing a high frequency component for mobile communication, high density packaging has been advanced in recent years. For example, a plurality of semiconductor chips such as bare chips and chip capacitors are mounted on a substrate such as a ceramic substrate at a high density, and the semiconductor devices are manufactured by connecting each by soldering. It is handled as a module and connected to the motherboard, which is the main board. In order to protect the semiconductor chip from the external environment when manufacturing the above semiconductor device, a hermetic seal (airtight sealing) using a metal has been mainly performed so far, and is still widely used. .

However, it is difficult to make the semiconductor device thin or small by the hermetic seal, and therefore, at present, resin sealing which can easily cope with the thinning and miniaturization of the semiconductor device is predominant. There is. Moreover, this resin encapsulation has the advantages of superior productivity and cost advantages as compared with hermetic seals.

[0004]

However, in the semiconductor device 1 which is resin-sealed as shown in FIG. 2A using a conventional sealing material, this is mounted on a mother board (not shown). The following problems occurred when connecting. That is, the semiconductor device 1 and the mother board are usually connected by reflow soldering, and in this step, both are exposed to a temperature environment equal to or higher than the melting temperature of the solder. Then, as the solder for connecting the two melts, the solder 5 that joins the semiconductor chip 4 and the substrate 3 inside the semiconductor device 1 also melts again. At this time, as shown in FIG. 2A, the solder 5 causes thermal expansion, which causes stress as shown by an arrow. However, when the resin 5 is sealed, most of the solder 5 is a sealing resin. Because it is covered with 2,
It becomes impossible to secure a sufficient escape area for stress. Therefore, the thermally expanded solder 5 is, as shown in FIG.
Forcibly entering the gap 6 between the semiconductor chip 4 and the substrate 3 and the interface between the semiconductor chip 4 and the sealing resin 2,
There was a problem that a short circuit might finally occur. This problem occurs, for example, in the reliability test of the semiconductor device 1 when the reflow soldering process is repeated three times after the moisture absorption process is performed as the pretreatment.

On the other hand, the above problem does not occur in the hermetic sealing or the like in which the semiconductor device is not sealed with resin.

Further, in recent years, so-called Pb-free solder has been frequently used as a solder in consideration of environmental problems. However, since this solder has a higher melting temperature than before, the peak during reflow soldering. The temperature is 260 ℃
The tendency tends to rise to a certain degree, and the possibility that a resin-sealed semiconductor device causes a short circuit as described above increases.

The present invention has been made in view of the above points, and is suitable for thinning and miniaturization, and when performing resin sealing excellent in productivity, even if the solder is remelted, An object of the present invention is to provide an epoxy resin composition and a semiconductor device capable of preventing a short circuit.

[0008]

The epoxy resin composition according to claim 1 of the present invention is an epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, a silicone component, and an inorganic filler as essential components. The flexural modulus of the product is 0.5 to 3.0 GPa.

The invention of claim 2 is characterized in that, in claim 1, the cured product has a bending strength of 20 to 50 MPa.

The invention of claim 3 is characterized in that, in claim 1 or 2, the glass transition temperature of the cured product is 100 to 150 ° C.

A fourth aspect of the present invention is characterized in that, in any one of the first to third aspects, the silicone component is contained in an amount of 20 to 60 mass% with respect to the total amount of the epoxy resin composition.

According to a fifth aspect of the present invention, in any one of the first to fourth aspects, a silicone component having an average particle size of 0.5 to 30 μm and a maximum particle size of 50 μm or less is used. It is characterized by.

The invention of claim 6 is characterized in that, in any one of claims 1 to 5, the cured product has a linear expansion coefficient of 25 to 80 ppm at a temperature not higher than the glass transition temperature.

The invention according to claim 7 is the method according to any one of claims 1 to 6, wherein the inorganic filler has an average particle size of 1
~ 20 μm, and 98% by mass based on the total amount of the inorganic filler
It is characterized in that the above is used with a particle diameter of 50 μm or less.

According to the invention of claim 8, in any one of claims 1 to 7, as the epoxy resin, at least one of a naphthalene skeleton type epoxy resin and a biphenyl skeleton type epoxy resin is used in an amount of 5 to 80 relative to the total amount of the epoxy resin.
It is characterized in that it is formed by using the one containing mass%.

The invention according to claim 9 is the method according to any one of claims 1 to 8, wherein the curing accelerator contains imidazoles in an amount of 0.2 to 5% by mass based on the total amount of the epoxy resin. It is characterized by.

A semiconductor device according to a tenth aspect is characterized in that the semiconductor chip 4 is sealed with the epoxy resin composition according to any one of the first to ninth aspects.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

The epoxy resin composition according to the present invention contains an epoxy resin, a curing agent, a curing accelerator, a silicone component and an inorganic filler as essential components. First, these components will be described.

In the present invention, the epoxy resin is not particularly limited, but for example, a bisphenol A type epoxy resin or a bisphenol F type epoxy resin can be used. And, the compounding amount of the epoxy resin is 10 to 20 mass% with respect to the total amount of the epoxy resin composition.
In particular, at this time, it is preferable that at least one of the naphthalene skeleton type epoxy resin and the biphenyl skeleton type epoxy resin is contained in an amount of 5 to 80 mass% with respect to the total amount of the epoxy resin. If you do this,
Flexural modulus, flexural strength of cured product of epoxy resin composition,
It becomes easy to set each of the glass transition temperature and the glass transition temperature within the range described later, and a higher glass transition temperature can be obtained within this range. However, if the compounding amount of the above naphthalene skeleton type epoxy resin or biphenyl skeleton type epoxy resin is less than 5% by mass with respect to the total amount of the epoxy resin, the glass transition temperature may be increased or set within a desired range. May be difficult to obtain and sufficient mechanical strength as a cured product may not be obtained. On the contrary, if it exceeds 80 mass%,
There is a risk that the viscosity of the epoxy resin composition will increase significantly and the workability will be impaired.

The curing agent is not particularly limited, but for example, acid anhydride such as 4-methylhexahydrophthalic acid can be used. And, the compounding amount of the curing agent is preferably 7 to 17 mass% with respect to the total amount of the epoxy resin composition.

Although the curing accelerator is not particularly limited, it is preferable to use imidazoles and to contain the imidazoles in an amount of 0.2 to 5% by mass based on the total amount of the epoxy resin. By doing so, it is possible to set the bending elastic modulus, the bending strength, the glass transition temperature, and the linear expansion coefficient at a temperature of the glass transition temperature or less of the cured product of the epoxy resin composition within the ranges described below. It will be easy. And at this time, especially 100 to 1
When the epoxy resin composition is cured by heating at 50 ° C. for about 1 to 3 hours, it becomes easier to set the characteristics of each of the above cured products in a desired range. However, if the amount of the imidazole compounded is less than 0.2% by mass or more than 5% by mass based on the total amount of the epoxy resin, it is difficult to set the properties of each of the above cured products in a desired range. There is a risk that

The silicone component is not particularly limited, but for example, silicone powder can be used. The silicone component is preferably contained in an amount of 20 to 60% by mass based on the total amount of the epoxy resin composition. By doing so, it becomes easy to set the flexural modulus, flexural strength, and glass transition temperature of the cured product of the epoxy resin composition within the ranges described below. However, when the silicone component is less than 20% by mass, the flexural modulus of the cured product of the epoxy resin composition becomes higher than the range described below, and there is a possibility that the problem of the present invention cannot be solved. If it exceeds 60% by mass, it becomes difficult to keep the flexural strength of the cured product of the epoxy resin composition within the range described below, and stress due to thermal expansion of the solder or moisture absorbed by the moisture absorption treatment evaporates and expands. The stress cannot be sufficiently buffered, and the cured product may be cracked.

Further, as the silicone component, it is preferable to use one having an average particle size of 0.5 to 30 μm and a maximum particle size of 50 μm or less. When such a silicone component is used, the flexural modulus of the cured product of the epoxy resin composition is set within the range described below, while ensuring a flexural strength to the extent that cracking of the cured product can be prevented. Is something that can be done. A more preferable average particle diameter is 0.5 to 10 μm. However, the average particle size is 0.5
If it is less than μm, the viscosity of the epoxy resin composition increases, and the sealing operation may become very difficult. On the contrary, when the average particle diameter exceeds 30 μm, even if the flexural modulus of the cured product can be set within the range described below by setting the blending amount of the silicone component in the above range, the bending strength of the cured product is , It becomes difficult to fit within the range described later,
The stress caused by the thermal expansion of the solder and the stress caused when the moisture absorbed by the moisture absorption process is vaporized and expanded cannot be sufficiently buffered, and the cured product may be cracked. Further, if the maximum particle size exceeds 50 μm, it becomes a starting point for causing the above-described crack phenomenon, which is not preferable.

Although the inorganic filler is not particularly limited, for example, fused silica can be used. And as the inorganic filler, the average particle size is 1 to
It is preferable to use those having a particle size of 20 μm and 98% by mass or more based on the total amount of the inorganic filler and having a particle size of 50 μm or less. More preferably, those having an average particle size of 1 to 10 μm and having a particle size of 98% by mass or more with respect to the total amount of the inorganic filler having a particle size of 30 μm or less are used. When such an inorganic filler is used, in a semiconductor device as one module, the epoxy resin composition easily infiltrates into the narrow gap between the semiconductor chip and the substrate, and all voids are filled with this epoxy resin composition. There is no room for the molten solder to infiltrate, and finally it is possible to prevent a short circuit. However, if the average particle size is less than 1 μm, the viscosity of the epoxy resin composition may significantly increase, which may impair workability. Conversely, if the average particle size exceeds 20 μm, the gap between the semiconductor chip and the substrate may be reduced. There is a possibility that the epoxy resin composition cannot be sufficiently filled in the narrow space. The blending amount of the inorganic filler is preferably 10 to 75 mass% with respect to the total amount of the epoxy resin composition.

Then, the above-mentioned epoxy resin, curing agent, curing accelerator, silicone component, and inorganic filler are blended and uniformly mixed with a mixer, a blender or the like, and then heated and kneaded with a kneader or a roll to obtain an epoxy resin. A resin composition can be prepared. The epoxy resin composition thus prepared is usually in a liquid state and can be used as it is, but it can also be made into a varnish by further diluting with an appropriate organic solvent.

Thereafter, a semiconductor device can be manufactured by sealing the semiconductor chip with the epoxy resin composition prepared as described above. For example, as shown in FIG. 1, a semiconductor chip 4 such as a bare chip or a chip capacitor is mounted on a substrate 3 and is connected with a solder 5, and an epoxy resin composition is sealed and molded on this by potting or the like. A semiconductor device 1 in which a semiconductor chip 4 is sealed with a sealing resin 2 made of an epoxy resin composition.
Can be manufactured. The semiconductor device 1 shown in FIG. 1 is of a type in which one surface of the substrate 3 is sealed, but it is not limited to this.

In the semiconductor device 1 thus manufactured, the flexural modulus of the cured product of the epoxy resin composition, which is the sealing resin 2 in the present invention, is 0.5 to 3.0 GPa. It is preferably 0.5 to 2.0 GPa, more preferably 0.5 to 1.3 GPa. When the flexural modulus of the sealing resin 2 is in the above range, when the semiconductor device 1 is connected to the motherboard (not shown) by reflow soldering, the solder 5 inside the semiconductor device 1 is remelted. Thermally expands, as shown by the arrow in FIG.
Even if a stress is generated from the solder 5 toward the periphery thereof, the sealing resin 2 covering most of the solder 5 buffers this stress, and the solder 5 is forced to the semiconductor chip 4 and the substrate 3.
It is possible to prevent it from entering the gap 6 between the semiconductor chip 4 and the interface between the semiconductor chip 4 and the sealing resin 2. Therefore, even if the solder 5 inside the semiconductor device 1 is re-melted, it remains in the initial position, does not move to an unnecessary position, and finally does not cause a short circuit. . However, the sealing resin 2
The flexural modulus of the cured product of the epoxy resin composition is 0.
If it is less than 5 GPa, mechanical strength cannot be obtained even in an actual use environment near room temperature, and it is easily damaged. Conversely, if the flexural modulus exceeds 3.0 GPa, solder 5 The stress due to the thermal expansion of the semiconductor chip 4 cannot be absorbed, and the melted solder 5 is forced to the semiconductor chip 4 and the substrate 3 as shown in FIG. 2B every time the reflow heating is repeated.
Between the semiconductor chip 4 and the encapsulating resin 2 and the semiconductor chip 4 spreads.
The solder 5 which has been electrically bonded to the substrate 3 at a plurality of points is bonded to each other, and finally a short circuit is caused.

The flexural strength of the cured product of the epoxy resin composition which is the sealing resin 2 is preferably 20 to 50 MPa. When the flexural strength of the sealing resin 2 is in such a range, the semiconductor device 1 can resist the stress due to the thermal expansion of the solder 5 and the stress when the moisture absorbed by the moisture absorption treatment is vaporized and expanded. It is possible to prevent the occurrence of cracks. However, the flexural strength of the cured product of the epoxy resin composition that is the sealing resin 2 is 20
If it is less than MPa, the effects as described above may not be sufficiently obtained, and if it exceeds 50 MPa, the flexural modulus of the cured product of the epoxy resin composition tends to be high, which is within the range described below. It may be difficult to fit.

The glass transition temperature of the cured product of the epoxy resin composition which is the sealing resin 2 is preferably 100 to 150 ° C. When the glass transition temperature of the sealing resin 2 is in such a range, the sealing resin 2 is in a glassy region under an actual use environment near room temperature, and sufficient mechanical strength should be ensured. It is of course possible to obtain high reliability even in the temperature cycle test. However, if the glass transition temperature of the cured product of the epoxy resin composition that is the sealing resin 2 is less than 100 ° C,
There is a possibility that sufficient mechanical strength may not be obtained from the glass-like region to the rubber-like region.
If it exceeds 50 ° C., high hardness can be obtained, but it becomes difficult to obtain sufficient toughness, and there is a risk of becoming brittle.

Further, the coefficient of linear expansion of the cured product of the epoxy resin composition as the sealing resin 2 at a temperature below the glass transition temperature is preferably 25 to 80 ppm. The reason is the flexural modulus of the cured product of the epoxy resin composition,
This is because it is easy to set each of the bending strength and the glass transition temperature within the above range, and as a result, it is possible to prevent the occurrence of short circuits and cracks. However, if the linear expansion coefficient is less than 25 ppm by increasing the proportion of the inorganic filler in the epoxy resin composition, the flexural modulus of the cured product of the epoxy resin composition becomes higher than the range described below, and There is a possibility that the problems of the invention cannot be solved. On the contrary, when the coefficient of linear expansion exceeds 80 ppm, in the semiconductor device 1, the sealing resin 2 is easily separated from the semiconductor chip 4 and the substrate 3, and a void into which the solder 5 remelted by reflow heating or the like enters is generated. May cause

[0032]

EXAMPLES The present invention will be specifically described below with reference to examples.

(Examples 1 to 4 and Comparative Examples 1 to 3) As the epoxy resin, "Epicoat 828" (epoxy equivalent 189) manufactured by Yuka Shell Epoxy Co., Ltd., which is a bisphenol A type epoxy resin, bisphenol F type epoxy resin. Manufactured by Yuka Shell Epoxy Co., Ltd. "Epicote 80
7 "(epoxy equivalent 169), a naphthalene skeleton type epoxy resin" HP40 "manufactured by Dainippon Ink and Chemicals, Inc.
32D "," YX4000F "manufactured by Yuka Shell Epoxy Co., Ltd., which is a biphenyl skeleton type epoxy resin.

As the curing agent, an acid anhydride represented by the following formula (A), that is, an acid of "MH-700" (hydroxyl equivalent 166) manufactured by Shin Nippon Rika Co., Ltd., which is 4-methylhexahydrophthalic acid. Anhydrous was used.

[0035]

[Chemical 1]

As a curing accelerator, "HX-3088" manufactured by Asahi Kasei Epoxy Co., Ltd., which is an imidazole, was used.

As the silicone component, "Trefil E601" manufactured by Toray Dow Corning Silicone Co., Ltd., which is a silicone powder (average particle size 5 μm, maximum particle size 1
0 μm) was used.

As the inorganic filler, fused silica “SE15” manufactured by Tokuyama Corporation (average particle size 15 μm,
A material having a particle diameter of 45 μm or less was used with 98% by mass or more.

Then, the respective components were blended in the blending amounts shown in Table 1, mixed for 120 minutes with a mixer to be homogenized, and then kneaded with a three-roll mill to form a liquid molding material comprising an epoxy resin composition. Was prepared. Then, the following measurement was performed on this molding material.

(Flexural Modulus) The flexural modulus was measured by JI
Performed according to SK 6911.

(Bending strength) The bending strength is measured according to JIS
Based on K 6911.

(Glass Transition Temperature) The glass transition temperature was measured by the dilatometer method.

(Linear Expansion Coefficient) The linear expansion coefficient at a temperature below the glass transition temperature was measured by the dilatometer method.

(Evaluation of Reflow After Moisture Absorption Treatment) A semiconductor device (ceramic substrate, 10 mm × 13 mm) on which mounting components are soldered and mounted is sealed with the liquid molding material obtained as described above. Cured. Next, the sealed semiconductor device was subjected to moisture absorption treatment in an atmosphere of temperature 85 ° C. and humidity 60% for 168 hours, and then reflow heating (peak temperature 260 ° C.) was repeated 3 times. After that, the presence or absence of cracks was checked by visual inspection, and the presence or absence of short circuits was confirmed by an electrical continuity test. Those in which no defective mode such as shorts or cracks were found were judged as "○", and those found were judged as "x". . The occurrence rate (%) of each failure mode is shown in the column of reflow evaluation after moisture absorption treatment in Table 1. The above test is based on JEDECSTANDARD Test Method A112-A Moistur.
e-Induced Stress Sensitivity for Plastic Surface M
It was done based on ount Device.

[0045]

[Table 1]

As can be seen from Table 1, in each of the examples, the occurrence rate of shorts and cracks was 0%, and it was confirmed that no defective mode was observed.

On the other hand, in Comparative Examples 1 and 2, it was confirmed that the flexural modulus of the sealing resin was too large to sufficiently absorb the stress due to the thermal expansion of the solder, resulting in a short circuit. In Comparative Example 3, the flexural modulus and flexural strength of the sealing resin were too small to obtain sufficient mechanical strength, and it was confirmed that cracks were generated.

[0048]

As described above, the epoxy resin composition according to claim 1 of the present invention is an epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, a silicone component and an inorganic filler as essential components. The flexural modulus of an object is 0.
Since the pressure is 5 to 3.0 GPa, even if the solder in the semiconductor device is remelted by the reflow heating and a stress is generated, the hardened material around the solder buffers the stress and moves to a place where the solder is unnecessary. It is possible to prevent the occurrence of a short circuit.

According to the second aspect of the present invention, since the flexural strength of the cured product is 20 to 50 MPa, cracks are prevented from occurring by resisting stress due to thermal expansion of solder and stress due to vaporization expansion of water. Is something that can be done.

According to the third aspect of the invention, since the glass transition temperature of the cured product is 100 to 150 ° C., mechanical strength can be ensured in an actual use environment near room temperature, and a temperature cycle test can be conducted. It is also possible to obtain high reliability.

Further, in the invention of claim 4, since the silicone component is contained in an amount of 20 to 60% by mass based on the total amount of the epoxy resin composition, the flexural modulus, flexural strength and glass transition temperature of the cured product are respectively determined. It is easy to set within the above range, and as a result, the occurrence of short circuit can be prevented.

In the invention of claim 5, the silicone component has an average particle size of 0.5 to 30 μm and a maximum particle size of 5.
Since the material having a thickness of 0 μm or less is used, it is possible to set the bending elastic modulus of the cured product within the above-mentioned range and to secure a bending strength to the extent that cracks can be prevented from occurring in the cured product. It is possible.

According to the sixth aspect of the invention, the linear expansion coefficient of the cured product at a temperature below the glass transition temperature is 25 to 80 pp.
Since it is m, it becomes easy to set the bending elastic modulus, the bending strength, and the glass transition temperature of the cured product within the above-mentioned ranges, and as a result, it is possible to prevent the occurrence of short circuits and cracks. is there.

The invention according to claim 7 uses an inorganic filler having an average particle size of 1 to 20 μm and a particle size of not less than 98% by mass based on the total amount of the inorganic filler and having a particle size of 50 μm or less. In a semiconductor device, the epoxy resin composition easily enters the narrow gap between the semiconductor chip and the substrate, and all voids are filled with this epoxy resin composition, and there is no room for remelted solder to enter. Finally, it is possible to prevent a short circuit from occurring.

In the invention of claim 8, the epoxy resin containing at least one of a naphthalene skeleton type epoxy resin and a biphenyl skeleton type epoxy resin is used in an amount of 5 to 80% by mass based on the total amount of the epoxy resin. It is easy to set the bending elastic modulus, the bending strength, and the glass transition temperature of the cured product within the ranges described above, and as a result, it is possible to prevent the occurrence of short circuits and cracks. Regarding the transition temperature, a higher value can be obtained within this range.

Further, in the invention of claim 9, imidazoles are used as a curing accelerator in an amount of 0.2 relative to the total amount of the epoxy resin.
Since the content of -5% by mass is used, the bending elastic modulus, the bending strength, the glass transition temperature, and the linear expansion coefficient at a temperature below the glass transition temperature of the cured product are set within the ranges described above. This makes it easy to prevent the occurrence of short circuits and cracks.

In the semiconductor device according to the tenth aspect, since the semiconductor chip is sealed with the epoxy resin composition according to any one of the first to ninth aspects, the solder in the semiconductor device is remelted by the reflow heating. Even if a stress is generated, the hardened material around the solder buffers this stress and prevents the solder from moving to an unnecessary portion, thereby preventing the occurrence of a short circuit.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of the present invention.

FIG. 2 shows a conventional example, and (a) and (b) are sectional views.

[Explanation of symbols]

1 Semiconductor device 4 semiconductor chips

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/31 (72) Inventor Yasutaka Miyata 1048 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Works Co., Ltd. (72 ) Inventor Takashi Hasegawa 1048, Kadoma, Kadoma-shi, Osaka Prefecture Matsushita Electric Works Co., Ltd. F-term within company (reference) 4J002 CD001 CD041 CD051 CP032 DJ018 EL136 EU117 FD018 FD146 FD157 GQ05 4J036 AA04 AA05 AA06 AC01 AD01 AD07 AD08 DB01 DA02 DA04 FA04 FB16 JA07 4M109 AA01 BA03 CA04 EA02 EB02 EB04 EB13 EB19 EC03 EC04 EC20 GA02

Claims (10)

[Claims] 1. An epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, a silicone component and an inorganic filler as essential components, the cured product having a flexural modulus of 0.5 to.
An epoxy resin composition, which is 3.0 GPa. 2. The epoxy resin composition according to claim 1, wherein the flexural strength of the cured product is 20 to 50 MPa. 3. The glass transition temperature of the cured product is 100 to 15.
It is 0 degreeC, The epoxy resin composition of Claim 1 or 2 characterized by the above-mentioned. 4. The epoxy resin composition according to claim 1, which contains a silicone component in an amount of 20 to 60 mass% with respect to the total amount of the epoxy resin composition. 5. A silicone component having an average particle size of 0.
The epoxy resin composition according to claim 1, wherein the epoxy resin composition has a maximum particle size of 5 to 30 μm and a maximum particle size of 50 μm or less. 6. The epoxy resin composition according to claim 1, wherein the cured product has a linear expansion coefficient of 25 to 80 ppm at a temperature not higher than the glass transition temperature. 7. An inorganic filler having an average particle size of 1 to 2
The epoxy resin composition according to any one of claims 1 to 6, wherein the epoxy resin composition having a particle size of 0 µm and 98% by mass or more based on the total amount of the inorganic filler has a particle diameter of 50 µm or less. 8. The epoxy resin containing at least one of a naphthalene skeleton type epoxy resin and a biphenyl skeleton type epoxy resin is contained in an amount of 5 to 80% by mass based on the total amount of the epoxy resin. 1
8. The epoxy resin composition according to any one of 7 to 7. 9. The epoxy according to claim 1, wherein the curing accelerator is one containing imidazoles in an amount of 0.2 to 5% by mass based on the total amount of the epoxy resin. Resin composition. 10. A semiconductor device obtained by encapsulating a semiconductor chip with the epoxy resin composition according to any one of claims 1 to 9.