JP2002507324A5 - - Google Patents

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Publication number
JP2002507324A5
JP2002507324A5 JP1999505358A JP50535899A JP2002507324A5 JP 2002507324 A5 JP2002507324 A5 JP 2002507324A5 JP 1999505358 A JP1999505358 A JP 1999505358A JP 50535899 A JP50535899 A JP 50535899A JP 2002507324 A5 JP2002507324 A5 JP 2002507324A5
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JP
Japan
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JP1999505358A
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English (en)
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JP4414491B2 (ja
JP2002507324A (ja
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Priority claimed from GBGB9713365.6A external-priority patent/GB9713365D0/en
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Publication of JP2002507324A5 publication Critical patent/JP2002507324A5/ja
Application granted granted Critical
Publication of JP4414491B2 publication Critical patent/JP4414491B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Figure 2002507324
Figure 2002507324
Figure 2002507324
Figure 2002507324
Figure 2002507324
Figure 2002507324
Figure 2002507324
JP50535899A 1997-06-25 1998-06-17 発光装置とトランジスタ Expired - Fee Related JP4414491B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9713365.6A GB9713365D0 (en) 1997-06-25 1997-06-25 A laser device and transistor
GB9713365.6 1997-06-25
PCT/GB1998/001775 WO1999000881A1 (en) 1997-06-25 1998-06-17 A light emitting device and transistor

Publications (3)

Publication Number Publication Date
JP2002507324A JP2002507324A (ja) 2002-03-05
JP2002507324A5 true JP2002507324A5 (ja) 2005-12-22
JP4414491B2 JP4414491B2 (ja) 2010-02-10

Family

ID=10814875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50535899A Expired - Fee Related JP4414491B2 (ja) 1997-06-25 1998-06-17 発光装置とトランジスタ

Country Status (7)

Country Link
US (1) US6829278B1 (ja)
EP (1) EP0992094B1 (ja)
JP (1) JP4414491B2 (ja)
KR (1) KR100563865B1 (ja)
DE (1) DE69807882T2 (ja)
GB (2) GB9713365D0 (ja)
WO (1) WO1999000881A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7177340B2 (en) * 2002-11-05 2007-02-13 Jds Uniphase Corporation Extended cavity laser device with bulk transmission grating
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
US7888625B2 (en) * 2008-09-25 2011-02-15 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing linearized optical signals with a light-emitting transistor
GB201000756D0 (en) 2010-01-18 2010-03-03 Gas Sensing Solutions Ltd Gas sensor with radiation guide
GB201018418D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated
GB201018417D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors
WO2015011984A1 (ja) * 2013-07-22 2015-01-29 株式会社村田製作所 垂直共振面発光レーザアレイおよびその製造方法
JP2016054295A (ja) * 2014-09-01 2016-04-14 三菱電機株式会社 波長結合外部共振器型レーザ装置
RU2587534C1 (ru) * 2014-12-08 2016-06-20 федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Дагестанский государственный технический университет" Экономичный световой транзистор
RU2673424C1 (ru) * 2018-02-06 2018-11-26 Ооо "Центральный Научно-Исследовательский Институт "Апертура" Фотоприемное устройство на каскадных транзисторах со светоизлучающими p-n-переходами и фоточувствительными n-p-переходами
CN112385100B (zh) 2018-05-14 2024-06-25 通快光子学公司 低电流、高功率激光二极管条
CN113140966B (zh) * 2021-03-09 2023-05-09 深圳瑞波光电子有限公司 一种半导体激光器巴条及其制造方法、电子设备
US11876343B2 (en) 2021-05-18 2024-01-16 Trumpf Photonics, Inc. Laser diode packaging platforms
US11557874B2 (en) 2021-05-18 2023-01-17 Trumpf Photonics, Inc. Double-sided cooling of laser diodes

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Publication number Priority date Publication date Assignee Title
US4212023A (en) 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
US4278515A (en) 1979-10-15 1981-07-14 The United States Of America As Represented By The Secretary Of The Army Method for removal of sodium carbonate from cyanide plating baths
JPS5916453B2 (ja) * 1981-12-03 1984-04-16 株式会社リコー 光デ−タ通信システム
JPS59163927A (ja) 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 光通信伝送システム
JPS62146024A (ja) 1985-12-20 1987-06-30 Sumitomo Electric Ind Ltd 光通信方式
US4928285A (en) * 1988-02-23 1990-05-22 Kabushiki Kaisha Toshiba Impurity-doped semiconductor laser device for single wavelength oscillation
JPH02244834A (ja) 1989-03-16 1990-09-28 Fujitsu Ltd 光信号受信装置の試験方法
US5130531A (en) * 1989-06-09 1992-07-14 Omron Corporation Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens
US5317440A (en) * 1990-05-21 1994-05-31 Hughes Aircraft Company Single wavelength bidirectional optical fiber communication link
AU636792B2 (en) 1991-02-13 1993-05-06 University Of Melbourne, The Semiconductor laser
US5440577A (en) * 1991-02-13 1995-08-08 The University Of Melbourne Semiconductor laser
US5278515A (en) 1992-12-24 1994-01-11 Uniphase Corporation High bandwidth information channel with optocoupling isolation
SE501721C2 (sv) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
WO1996008857A1 (en) 1994-09-14 1996-03-21 Paul Julian Edwards A low noise photon coupled circuit
US5799029A (en) * 1996-05-14 1998-08-25 Sdl, Inc. Laser system with reduced power fluctuations for employment in applications requiring continuous stable light intensity delivery

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