JP2002373875A - Method of manufacturing semiconductor device, and chemical mechanical polishing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly polish a surface of a semiconductor wafer to be polished with a high accuracy. SOLUTION: In a chemical mechanical polishing apparatus 10, a work (semiconductor wafer) 1 held by a head 32 is placed on a platen 11 and chemically and mechanically polished as rubbed with a polishing cloth 14 having a slurry 17 supplied thereinto, a high temperature cooling water passage 19 for passage of high temperature cooling water 18 is made in an intermediate zone in the vicinity of the upper surface of a base plate 12, and a central low-temperature cooling water passage 23 and a peripheral low-temperature cooling water passage 24 for passage of low temperature cooling water 22 are made at both sides thereof. A cooling water supply nozzle 28 for supplying cooling water 27 onto a polishing material surface 15 is provided at the side of a slurry supply nozzle 16. A temperature increase in a region of a platen corresponding to a work periphery is controlled to be suppressed when compared with a region of the platen corresponding to a region of the platen corresponding to a work center during chemical mechanical polishing operation, whereby the in-plane temperature distribution of the work during the polishing operation is made uniform and a polishing rate distribution for the work is made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and a chemical mechanical polishing technique. For example, the present invention relates to a method for manufacturing a patterned semiconductor wafer (hereinafter, referred to as a patterned wafer) on a patterned main surface. The present invention relates to a technique for chemical mechanical polishing.

[0002]

2. Description of the Related Art Recently, there has been proposed a method of manufacturing a semiconductor device in which unevenness on a patterned main surface of a patterned wafer (hereinafter referred to as a "patterned main surface") is flattened by a chemical mechanical polishing method. . A conventional chemical mechanical polishing apparatus used in this chemical mechanical polishing method includes a wafer holding head for holding a patterned wafer, and a platen (polishing disk) having a polishing cloth, and an etching solution (referred to as a slurry). A polishing solution to be dropped (hereinafter, referred to as a slurry) is rubbed against the pattern-side main surface of the patterned wafer held by the wafer holding head against a polishing cloth onto which chemical polishing is performed. The temperature of the platen having the polishing cloth is adjusted so that the temperature distribution becomes uniform over the entirety by flowing cooling water through a circulation path provided inside the base plate.

[0003] Japanese Patent Application Laid-Open No. 2000-15562 and Japanese Patent Application Laid-Open No.
No. 1-307486.

[0004]

However, in the conventional chemical mechanical polishing apparatus, the temperature of the platen increases during chemical mechanical polishing, and the wafer itself has a temperature distribution in the radial direction. It has been clarified by the present inventor that there is a problem that the polishing rate distribution becomes uneven.

An object of the present invention is to provide a semiconductor device manufacturing technique capable of uniformly polishing a surface to be polished of a semiconductor wafer with high accuracy.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0007]

The outline of a typical invention among the inventions disclosed in the present application is as follows.

That is, in a chemical mechanical polishing apparatus in which a semiconductor wafer held by a wafer holding head is laid on a platen and rubbed against a polishing cloth to which slurry is supplied to perform chemical mechanical polishing, the temperature control area of the platen is controlled. Are divided into a region corresponding to the central portion of the semiconductor wafer and a region corresponding to the peripheral portion of the semiconductor wafer, and both regions are controlled at different temperatures.

According to the above-mentioned means, during mechanical polishing by rubbing the semiconductor wafer held by the wafer holding head against the polishing cloth and chemical polishing by slurry, the temperature rise in the region corresponding to the peripheral portion of the semiconductor wafer on the platen. The platen is cooled so as to suppress the temperature rise in a region corresponding to the central portion of the semiconductor wafer on the platen, so that the in-plane temperature distribution of the semiconductor wafer during chemical mechanical polishing can be made uniform throughout. Therefore, the polishing rate distribution on the semiconductor wafer can be made uniform over the whole, and the film thickness distribution of the semiconductor wafer after chemical mechanical polishing can be made uniform over the whole.

[0010]

1 shows a chemical mechanical polishing apparatus according to an embodiment of the present invention, wherein (a) is a front sectional view,
(B) is sectional drawing which follows the bb line | wire of (a). 2A and 2B show a workpiece, in which FIG. 2A is a plan view and FIG. 2B is an enlarged partial sectional view. FIGS. 3A and 3B are diagrams illustrating a temperature rise during chemical mechanical polishing. FIG. 3A shows a process in which the temperature of one work increases when chemical mechanical polishing is performed.
(B) shows the change in the temperature rise of the platen when the chemical mechanical polishing is continuously performed, and (c) shows the temperature distribution in the work 10 seconds after the start of the polishing. FIG. 4 is a diagram showing the in-plane distribution of the contact distance between the workpiece and the polishing cloth and the in-plane distribution of the contact time between the workpiece and the polishing cloth.

A chemical mechanical polishing apparatus 1 according to the present embodiment.
No. 0 is configured to hold a patterned wafer as a work by a wafer holding head and rub the patterned main surface, which is a surface to be polished, while supplying a slurry as an abrasive to a polishing cloth to perform chemical mechanical polishing. ing.

Here, a patterned wafer shown in FIG. 2 (hereinafter, referred to as a work of the chemical mechanical polishing apparatus 10).
Work. 1) will be described. As shown in FIG. 2, the work 1 has a wafer (hereinafter, referred to as a substrate) 2 in which an orientation flat (hereinafter, referred to as an orientation flat) 3 is cut in a linear shape at a part of the outer periphery.
It has. A memory M, which is an example of a semiconductor element, is formed in a surface layer region on a patterning-side main surface (hereinafter, referred to as a front surface) of the substrate 2. On the surface of the substrate 2, a wiring 4 formed from a wiring layer film as an example of a metal film and an interlayer insulating film 5 as an example of an insulating film are respectively deposited. Since the wiring 4 is formed by a line segment having a thickness, an uneven portion 6 is formed on the front surface of the interlayer insulating film 5 adhered thereon so as to follow the unevenness of the underlying wiring 4. I have.

Therefore, in the present embodiment, a part of the surface of the interlayer insulating film 5 is partially removed by a chemical mechanical polishing apparatus 10.
Thus, the interlayer insulating film 5 is planarized by chemical mechanical polishing. Therefore, the front surface of the interlayer insulating film 5 forms the surface 7 to be polished by the chemical mechanical polishing apparatus 10.

As shown in FIG. 1, the chemical mechanical polishing apparatus 10 has a platen 11. Platen 11
Has a disk-shaped base plate 12 having a radius sufficiently larger than the diameter of the work 1, and the base plate 12 is rotatably supported in a horizontal plane. A rotating shaft 13 arranged vertically is fixed to the center of the lower surface of the base plate 12, and the base plate 12 is configured to be driven to rotate by the rotating shaft 13. A polishing cloth (cloth) 14 is uniformly adhered to the entire upper surface of the base plate 12.
The polishing cloth 14 is a polishing material in which fine abrasive grains such as colloidal silica are contained in a cloth (cloth) of a synthetic resin having a pore structure on the surface, and a polishing material surface 15 is formed by the front and rear surfaces. In the polishing operation using the polishing cloth 14, a slurry is used, so that in addition to mechanical polishing (polishing), a mechanochemical polish (mechanochemical polish) that enhances the polishing effect is used.
lishing). Therefore, a slurry supply nozzle 16 for supplying the slurry 17 is provided substantially directly above the center line of the platen 11.

A high-temperature cooling water for flowing a high-temperature (for example, about 20 ° C.) cooling water 18 indicated by a dashed arrow is provided in an intermediate region between the center and the periphery near the upper surface inside the base plate 12. A passage 19 is laid in the shape of a plurality of circular annular paths, and a water supply passage 20 and a drain passage 21 for passing the high-temperature cooling water 18 are provided at the inner end and the outer end of the high-temperature cooling water passage 19, respectively. It is connected. At the center and the periphery of the high-temperature cooling water passage 19 near the upper surface inside the base plate 12,
Low temperature (for example, about 4 ° C.) cooling water 2 indicated by a solid arrow
The center-side low-temperature cooling water passage 23 and the peripheral-side low-temperature cooling water passage 24 for circulating the cooling water 2 are laid in concentric circles, respectively. A water supply passage 25 and a drain passage 26 for passing the low-temperature cooling water 22 are connected to each inner end and each outer end. Although not shown, the high-temperature water supply passage 20 and the drainage passage 21
The low-temperature water supply passage 25 and the drainage passage 26 are respectively connected to water supply devices for flowing the low-temperature cooling water 22. In other words, the high-temperature cooling water passage 19 and the low-temperature cooling water passages 23 and 24 define the temperature control region of the platen 11 as a region corresponding to the central portion of the patterned wafer 1 and a region corresponding to the peripheral portion of the patterned wafer 1. The two regions are configured to be controlled at different temperatures (for example, 20 ° C. and 4 ° C.).

The cooling water 2 is provided near the slurry supply nozzle 16.
Cooling water supply nozzle 2 for supplying 7 to abrasive surface 15
8 are connected next to each other, and the slurry supply nozzle 1
The cooling water supply nozzle 28 and the cooling water supply nozzle 28 are surrounded by a cooling water passage 29 through which the cooling water 22 of a low temperature (for example, about 4 ° C.) flows as indicated by a solid arrow. The cooling water passage 29 is connected to a water supply passage 30 and a drainage passage 31 for passing the low-temperature cooling water 22, respectively. The water supply passage 30 and the drainage passage 31 are provided with a water supply device for flowing the low-temperature cooling water 22 ( (Not shown).

As shown in FIG. 1, the chemical mechanical polishing apparatus 10 includes a wafer holding head (hereinafter, referred to as a head) 32. The head 32 has a disk-shaped head body 33 having a diameter slightly larger than the diameter of the work 1, and a disk-shaped backing pad 34 is concentrically arranged on the lower surface of the head body 33. The backing pad 34 is formed of a poly urethane foam, and a highly flexible layer is uniformly formed on the surface in contact with the workpiece 1 by the porous and porous group of the foam. A circular ring-shaped retainer ring 35 is provided on the outer peripheral portion on the lower surface of the head main body 33.
, And the retainer ring 35 is fastened to the head main body 33 by a plurality of bolts (not shown). For the retainer ring 35, a resin having a hardness sufficiently higher than the hardness of the polished surface 7 of the work 1 is used, and a circular ring having an outer diameter equal to the outer diameter of the head body 33 and an inner diameter substantially equal to the outer diameter of the work 1 It is formed in a shape. The retainer ring 35 holds the workpiece 1 with the polished surface 7 exposed downward from the lower end, while preventing the workpiece 1 from jumping outward during the polishing operation. Backing pad 34
Is fitted in the hollow portion of the retainer ring 35.

Next, a chemical mechanical polishing step, which is a characteristic step of a method of manufacturing a semiconductor device using the chemical mechanical polishing apparatus 10 according to the embodiment, which is an embodiment of the present invention, forms a multilayer wiring. The case will be described as an example.

The semiconductor wafer having the unspecified number of uneven portions 6 formed on the surface 7 to be polished is used as a workpiece 1 in a chemical mechanical polishing apparatus 10 for performing a flattening step in chemical mechanical polishing according to the above-described configuration. Supplied.

As shown in FIG. 1, the workpiece 1 supplied to the chemical mechanical polishing apparatus 10 is inserted into the retainer ring 35 of the head 32 with the surface to be polished 7 facing downward. Will be retained. Head 3 holding work 1
2 is moved down just above the platen 11 and then lowered.

Subsequently, a slurry 17 is supplied from the slurry supply nozzle 16 to the abrasive surface 15 at a flow rate of about 100 to 200 ccm (cubic centimeters per minute).
The platen 11 and the head 32 are rotated at a speed of 30 to 80 rpm. When the head 32 is lowered very little by little, the work 1 is urged vertically via the backing pad 34, and the polished surface 7 of the work 1 is rubbed against the abrasive surface 15 of the polishing cloth 14. At this time, slurry 1
Since 7 is taken in the contact surface between the abrasive material surface 15 and the surface 7 to be polished, chemical mechanical polishing with enhanced polishing effect is performed in addition to mechanical polishing (polishing).

Here, the phenomenon that the temperature of the platen rises during chemical mechanical polishing and the workpiece itself has a temperature distribution in the radial direction, so that the polishing rate distribution in the workpiece surface becomes non-uniform. Was determined by experiments by the present inventors. For example, when the temperature of the platen increases from 27 ° C. to 38 ° C., the polishing rate in chemical mechanical polishing of the thermal oxide film increases by 10% as compared with the case where the temperature does not increase, and the BP increases.
In the case of SG, it rises by 22%. The thermal oxide film and BP
The difference in polishing rate between SG and the film type is considered to be the difference in the degree of the influence of the chemical reaction. Incidentally, it has been found that the influence of the temperature rise and the temperature distribution on the polishing rate and the uniformity increases in the order of the thermal oxide film, the CVD oxide film, the doped oxide film, and the metal-based material.

FIG. 3 (a) shows a process in which the temperature of one work rises when chemical mechanical polishing is performed. In other words, the workpiece on which the chemical mechanical polishing has been started at room temperature (23 ° C.) rises to the maximum temperature (38 ° C.) in ten and several seconds, and thereafter maintains the maximum temperature.

FIG. 3 (b) shows the transition of the temperature rise of the platen when the chemical mechanical polishing is performed continuously. That is, the temperature of the platen 11 is from 25 to
The temperature rises to 35 ° C. by 30 sheets, and thereafter gradually increases.

FIG. 3C shows the temperature distribution in the work 10 seconds after the start of polishing. That is, the temperature distribution of the work at this time is such that the central part has a high temperature and the peripheral part has a low temperature, and the temperature difference (ΔT) is 15 ° C. The dashed straight line indicates the temperature distribution immediately after the start of polishing, and is uniform throughout.

The broken line curve in FIG. 4 shows the in-plane distribution of the contact distance between the workpiece and the polishing cloth, and the solid line curve in FIG. 4 shows the in-plane distribution of the contact time between the workpiece and the polishing cloth. ing. According to FIG. 4, it can be seen that the relationship between the in-plane distribution of the contact distance between the workpiece and the polishing cloth and the in-plane distribution of the contact time between the workpiece and the polishing cloth is exactly opposite. .

Based on the above findings, in the chemical mechanical polishing method according to the present embodiment, mechanical polishing by rubbing the head 32 against the abrasive surface 15 of the work 1 and chemical polishing by the slurry 17 are performed. When performing chemical mechanical polishing with proper polishing, the platen 11 is divided into a region corresponding to the central portion of the work 1 and a region corresponding to the peripheral portion of the work 1 and both regions are cooled to different temperatures. That is, in the high-temperature cooling water passage 19 laid in the middle area between the center and the periphery near the upper surface inside the base plate 12, the high-temperature cooling water 18 is supplied with the water supply passage 20 and the drain passage 21.
Watered by. At the same time, a low-temperature cooling water passage 23 and a low-temperature cooling water passage 24, which are laid at the center and the periphery of the high-temperature cooling water passage 19 near the upper surface inside the base plate 12, have a low temperature. The cooling water 22 flows through the water supply passage 25 and the drain passage 26.

The high-temperature cooling water passage 19 and the low-temperature cooling water 2
2, the temperature rise in the region of the platen 11 corresponding to the peripheral portion of the work 1 is suppressed as compared with the temperature rise in the region of the platen 11 corresponding to the central portion of the work 1. The in-plane temperature distribution of the workpiece 1 during the mechanical polishing becomes uniform throughout. As a result, the distribution of the polishing rate for the work 1 becomes uniform over the entirety, so that the film thickness distribution of the work 1 after the chemical mechanical polishing becomes uniform over the whole.

In the chemical mechanical polishing according to the present embodiment, the low-temperature cooling water 22 flows through the cooling water passage 29 through the water supply passage 30 and the drain passage 31, so that the slurry supply nozzle 16 passes through the platen 11. Is cooled. By supplying the cooled slurry 17 to the platen 11, the temperature rise of the platen 11 is suppressed, so that the polishing rate distribution of the chemical mechanical polishing becomes more uniform, and the chemical mechanical polishing after the polishing is performed. The film thickness distribution becomes even more uniform.

When the chemical mechanical polishing of the polishing amount set by the above chemical mechanical polishing is completed, the surface of the insulating film 5 which is the surface 7 to be polished of the work 1 is flattened with extremely high precision, and the wiring 4 The insulating film 5 is left uniformly over the entire surface with a preset layer thickness. The work 1 in this state is a chemical mechanical polishing device 10
Then, the wafer is stored in a wafer cassette by an unloading device, passed through a subsequent cleaning process, and then sent to a hole forming process. The work 1 to be started next is the head 32
Attached to.

In the chemical mechanical polishing method according to the present embodiment, the cooling water is supplied between the end of the chemical mechanical polishing of the work 1 started before and the start of the chemical mechanical polishing of the work 1 to be started next. Cooling water 27 cooled to a low temperature (4 ° C.) is supplied to the platen 11 from the supply nozzle 28, and the platen 11 is cooled for each chemical mechanical polishing. The cooling of the platen 11 prevents the temperature of the platen 11 from rising even if the number of starts increases, so that the polishing rate distribution of the chemical mechanical polishing of the platen 11 becomes more uniform, and the chemical mechanical polishing The subsequent film thickness distribution becomes even more uniform.

According to the above embodiment, the following effects can be obtained.

1) When performing the chemical mechanical polishing, the temperature rise in the region of the platen 11 corresponding to the peripheral portion of the work 1 is suppressed as compared with the temperature rise in the region of the platen 11 corresponding to the central portion of the work 1. Platen 1
Cooling the workpiece 1 during chemical mechanical polishing
Can be made uniform over the entire surface, so that the polishing rate distribution on the work 1 can be made uniform over the whole, and the film thickness distribution of the work 1 after the chemical mechanical polishing can be made uniform over the whole.

2) At the time of chemical mechanical polishing, by supplying the slurry 17 which has been forcibly cooled to the platen 11, the temperature rise of the platen 11 can be suppressed, so that the polishing rate distribution of the chemical mechanical polishing can be made more uniform. And the film thickness distribution after chemical mechanical polishing can be further uniformed.

3) From the end of the chemical mechanical polishing of the work 1 started before to the start of the chemical mechanical polishing of the work 1 to be started next, a low temperature (4 ° C.) is supplied from the cooling water supply nozzle 28.
Cooling water 27 is supplied to the platen 11 to forcibly cool the platen 11 for each chemical mechanical polishing, thereby preventing the temperature of the platen 11 from rising even when the number of starts increases. Therefore, the polishing rate distribution of the chemical mechanical polishing due to the temperature rise of the platen 11 can be made uniform, and the film thickness distribution after the chemical mechanical polishing can be made uniform.

Although the invention made by the inventor has been specifically described based on the embodiment, the invention is not limited to the embodiment and can be variously modified without departing from the gist of the invention. Needless to say, there is.

For example, as shown in FIG. 5, a cooling medium passage 37 for circulating a cooling medium 36 is provided inside a main body 33 of a head 32 for holding the work 1, and a cooling medium for flowing through the head main body 33. The work 1 may be forcibly cooled by cooling the head 32 with 36.

As shown in FIG. 6, a cooling gas ejection head 41 for ejecting a cooling gas 40 is provided near the platen 11, and the platen 11 is cooled by blowing the cooling gas 40 onto the platen 11. May be configured.
The cooling gas ejection head 41 shown in FIG. 6 includes a main body 42 formed in a fan-shaped hollow body that is required on the center line of the platen 11, and a plurality of bottom walls of the main body 42 facing the platen 11 are provided. A plurality of outlets 43 are provided. In consideration of the temperature distribution in the plane of the workpiece 1, the plurality of ejection ports 43 are arranged in a fan-shaped main area and more in a peripheral area. In addition, an inert gas such as nitrogen or argon is used as the cooling gas 40 in consideration of reactivity with the slurry 17.

The cooling conditions of the platen and the head include the rotation speed of the head and the platen, the amount of slurry supplied from the slurry supply nozzle, the outer diameter and the amount of polishing of the work, the pressing force against the work at the time of polishing, the state of the abrasive material surface, and the like. It is desirable to select an appropriate value by an empirical method such as an experiment or a computer simulation depending on the above conditions.

The head is not limited to the structure described in the above embodiment, but may have another structure. Further, the head is not limited to the platen located on the upper side, and the platen may be located on the upper side on the lower side. Further, the configuration is not limited to lowering the head side, but may be configured to raise the platen side.

In the above description, mainly the case where the invention made by the present inventor is applied to a chemical mechanical polishing technique for flattening irregularities on a patterning side main surface of a patterned wafer, which is a background of application, will be described. However, the present invention is not limited to this, and can be applied to all chemical mechanical polishing techniques such as the chemical mechanical polishing technique used to form copper (Cu) wiring by the damascene technique.

[0042]

The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.

Since the in-plane temperature distribution of the semiconductor wafer during chemical mechanical polishing is made uniform over the entire surface, the polishing rate distribution for the semiconductor wafer can be made uniform over the entire surface. The film thickness distribution after mechanical polishing can be made uniform throughout.

[Brief description of the drawings]

FIG. 1 shows a chemical mechanical polishing apparatus according to an embodiment of the present invention, wherein (a) is a front sectional view and (b) is (a).
It is sectional drawing in alignment with the bb line of FIG.

FIGS. 2A and 2B show a workpiece, where FIG. 2A is a plan view and FIG.
Is an enlarged partial sectional view.

FIGS. 3A and 3B are diagrams illustrating a temperature rise during chemical mechanical polishing. FIG. 3A illustrates a process in which the temperature of one workpiece increases when chemical mechanical polishing is performed, and FIG. The transition of the temperature rise of the platen in the case of performing the chemical mechanical polishing continuously is shown, and (c) shows the temperature distribution in the work 10 seconds after the start of the polishing.

FIG. 4 is a diagram showing the in-plane distribution of the contact distance between the workpiece and the polishing cloth and the in-plane distribution of the contact time between the workpiece and the polishing cloth.

FIG. 5 is a partially cut front view showing a chemical mechanical polishing apparatus according to another embodiment of the present invention.

FIG. 6 shows a chemical mechanical polishing apparatus according to another embodiment of the present invention, wherein (a) is a partially cut front view,
(B) is a plan view.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Work (semiconductor wafer), 2 ... Substrate (wafer), 3 ... Orientation flat (orientation flat), 4 ... Wiring, 5 ... Interlayer insulating film (insulating film), 6 ... Unevenness part, 7 ... Polished surface, 10 ... Chemical mechanical polishing equipment, 11 ...
Platen, 12: Base plate, 13: Rotation axis, 14
... polishing cloth, 15 ... abrasive material surface, 16 ... slurry supply nozzle, 17 ... slurry, 18 ... high temperature cooling water, 19 ... high temperature cooling water passage, 20 ... water supply passage, 21 ... drainage passage, 22 ... low temperature cooling water, 23 ... Central side low temperature cooling water passage, 24 ... Peripheral side low temperature cooling water passage, 25 ... Water supply passage, 26 ... Drainage passage, 27 ... Cooling water, 28 ... Cooling water supply nozzle, 29 ... Cooling water passage, 30 ... Water supply passage, 31 drainage passage, 32 head (wafer holding head), 33 head body, 34
Backing pad, 35: retainer ring, 36: cooling medium, 37: cooling medium passage, 40: cooling gas, 41: cooling gas ejection head, 42: main body, 43: ejection port.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Arisu Tanzawa 1-1 Nishiyokote-cho, Takasaki-shi, Gunma Hitachi East Semiconductor Corporation (72) Inventor Hiroki Takeuchi 1-1-1, Nishiyokote-cho, Takasaki-shi, Gunma Hitachi East Inside Semiconductor Co., Ltd. (72) Inventor Takashi Igarashi 5-2-1, Josuihonmachi, Kodaira-shi, Tokyo F-term in the Semiconductor Group, Hitachi, Ltd. 3C058 AC04 BA02 BA08 CB01 DA12 DA17

Claims (5)

[Claims] 1. A method for manufacturing a semiconductor device, comprising: a step of laying a semiconductor wafer held by a wafer holding head on a platen and rubbing it against a polishing cloth to which a slurry is supplied and performing chemical mechanical polishing. A method of manufacturing a semiconductor device, wherein the temperature of the platen is lowered after completion of chemical mechanical polishing. 2. The method according to claim 1, wherein a cooling medium is supplied to the platen after the completion of the chemical polishing. 3. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of laying a semiconductor wafer held by a wafer holding head on a platen and rubbing the same with a polishing cloth to which a slurry is supplied and performing chemical mechanical polishing. A method of manufacturing a semiconductor device, wherein the cooling strength of the semiconductor wafer is gradually increased as time passes by chemical mechanical polishing. 4. The method according to claim 3, wherein the slurry is cooled during the chemical mechanical polishing. 5. A chemical mechanical polishing apparatus in which a semiconductor wafer held by a wafer holding head is laid on a platen and rubbed against a polishing cloth to which a slurry is supplied to perform chemical mechanical polishing. Is divided into a region corresponding to a central portion of the semiconductor wafer and a region corresponding to a peripheral portion of the semiconductor wafer, and both regions are controlled at different temperatures.