JP2002373854A - Aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten a time required for purging with inert gas in a space (optical path space), such as a space between a projection optical system and a substrate, through which an exposure light passes. SOLUTION: This aligner is provided with a wafer stage 102, a projection optical system 102, and a shielding member 115 surrounding the side surfaces of an optical path space 113 between the stage 102 and the system 101. An exposure light passes through the path space 113. Distances between an end of the member 115 and a wafer 103 is large at the upstream side of the flow of a surrounding atmosphere and is small at the downstream side thereof.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used for producing, for example, semiconductor devices, image pickup devices, liquid crystal display devices, thin-film magnetic heads and other micro devices.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device or the like, an exposure apparatus for projecting and exposing a pattern image of a mask (for example, a reticle) onto a photosensitive substrate via a projection optical system is used. In recent years, semiconductor integrated circuits have been developed in the direction of miniaturization, and in photolithography processes, the wavelength of photolithography light sources has been reduced.

However, vacuum ultraviolet rays, especially 250 n
m, for example, a KrF excimer laser (wavelength: 248 nm), an ArF excimer laser (wavelength: 19 nm).
3nm), F2 laser (wavelength 157nm), or YA
When using light such as a harmonic such as a G laser as exposure light or when using X-rays as exposure light, there is a problem that the intensity of the exposure light is reduced due to the influence of absorption of the exposure light by oxygen. Had occurred.

[0004] Therefore, conventionally, in an exposure apparatus having a light source such as an F2 excimer laser, a sealed space for sealing only the optical path portion is formed, and the gas in the sealed space is gas-free by oxygen-free gas such as nitrogen. To reduce the light transmittance.

FIG. 11 shows that an inert gas atmosphere is formed in a space between a final optical member of a projection optical system (barrel) and a photosensitive substrate (wafer) by supplying the space with an inert gas. FIG. 3 is a diagram illustrating an exposure apparatus that performs exposure. In this exposure apparatus, a shielding member is provided around the space to separate the space above the exposure region from the surrounding atmosphere, and an inert gas is supplied into the space from around the exposure region.

[0006]

However, FIG.
In the exposure apparatus shown in (1), it takes about several seconds from the time when the wafer enters the exposure area by driving the wafer stage to the time when the oxygen concentration in the space above the exposure area decreases, which causes a decrease in throughput. I was

[0007] The same problem applies to the case where an inert gas is supplied to the periphery of the reticle. In the reticle, it takes several seconds to reduce the oxygen concentration in the space surrounded by the shielding member. This has caused a decrease in throughput.

[0008] The present invention has been made in view of the above background, for example, the space between the projection optical system and the substrate,
An optical path including a space through which exposure light passes, such as a space between an illumination optical system that illuminates a mask (for example, a reticle) and a mask stage that holds the mask, and a space between the mask stage and the projection optical system. An object of the present invention is to reduce the time required for replacing gas in a space with an inert gas.

[0009]

An exposure apparatus according to the present invention relates to an exposure apparatus for projecting and transferring a pattern formed on a mask onto a substrate by using exposure light, and includes a stage, an optical system, the stage and the stage. A shielding member surrounding a side surface of the optical path space including a space through which the exposure light passes between the optical system, and a supply unit for supplying an inert gas to the optical path space surrounded by the shielding member; and The distance between a part of the end and the stage and the distance between the other part of the end of the shielding member and the stage are different or different. Features. According to this configuration, for example, the exhaust efficiency of the optical path space can be improved and the replacement time can be shortened.

[0010] According to a preferred embodiment of the present invention, the shielding member includes first and second element shielding members disposed opposite to each other, and a surrounding atmosphere among the first and second element shielding members. The distance between the end of the element shielding member on the upstream side of the flow and the stage is relatively small, and the end of the first and second element shielding members on the downstream side of the flow of the surrounding atmosphere. Preferably, the distance between the stage and the stage is relatively large. This reduces the influence of the optical path space on the upstream side of the flow of the surrounding atmosphere and reduces the efficiency of exhausting gas from the optical path space to the downstream side of the flow of the surrounding atmosphere. And the time required to replace the gas in the optical path space with the inert gas can be reduced. According to a preferred embodiment of the present invention, each of the first and second element shielding members is disposed orthogonally to a flow direction of a surrounding atmosphere of the optical path space.

According to a preferred embodiment of the present invention, the driving mechanism includes a space between a part of the end of the shielding member and the stage, and another part of the end of the shielding member. It is preferable to have a driving mechanism for making the distance between the stage and the stage different. Thus, for example, the exhaust efficiency can be improved according to the moving direction of the stage. Here, the shielding member includes first and second oppositely disposed members.
An element shielding member, wherein the driving mechanism drives the first element shielding member to adjust a distance between an end of the first element shielding member and the stage, and drives the second element shielding member. And it is preferable to have a 2nd drive part which adjusts the space | interval between the edge part and the said stage. This allows
The distance between the end of the first element shielding member and the stage and the distance between the end of the second element shielding member and the stage can be individually controlled.

[0012] According to a preferred embodiment of the present invention, it is preferable that the first and second element shielding members are respectively arranged orthogonal to the moving direction of the stage. Here, the driving mechanism may be configured to control an interval between an end of the first element shielding member and the stage and a distance between an end of the second element shielding member and the stage according to a moving direction of the stage. Is preferably adjusted. Further, the driving mechanism relatively reduces an interval between the end of the first and second element shielding members on the movement direction side of the stage and the stage, and reduces the distance between the first and second element shielding members. It is preferable that the distance between the end of the element shielding member on the side opposite to the moving direction of the stage among the element shielding members and the stage is relatively large. Thus, for example, the amount of the inert gas ejected to the side where the stage enters can be increased, and a decrease in the concentration of the inert gas in the optical path space due to the entrainment of the surrounding atmosphere accompanying the movement of the stage can be suppressed.

According to a preferred embodiment of the present invention, the exposure apparatus adjusts an interval between at least a part of an end of the shielding member and the stage according to a moving speed of the stage. It is preferable to further include a driving mechanism.
Thus, for example, regardless of the moving speed of the stage, the concentration of the inert gas in the optical path space can be maintained at a high concentration.

According to a preferred embodiment of the present invention, it is preferable that the image forming apparatus further includes a connection member for connecting the shielding member and the optical system. Here, it is preferable that the connection member has a structure for maintaining airtightness between the shielding member and the optical system. Thereby, for example, it is possible to prevent the surrounding atmosphere from entering the optical path space.

According to a preferred embodiment of the present invention, it is preferable that the apparatus further comprises a stage controller for controlling the stage to adjust an interval between an end of the shielding member and the stage. Here, the stage controller, when a predetermined area on the stage enters the optical path space,
The distance between the end of the shielding member and the stage is a first distance.
Preferably, the stage is controlled so that the distance is smaller than the first distance. Thus, for example, the replacement time for replacing the gas in the optical path space with the inert gas can be further reduced, and the concentration of the inert gas after the replacement can be maintained at a high concentration.

According to a preferred embodiment of the present invention, it is preferable that the supply unit supplies an inert gas to the optical path space so that the optical path space has a positive pressure with respect to a surrounding space. Thereby, the gas in the optical path space can be efficiently replaced by the inert gas.

According to a preferred embodiment of the present invention, it is preferable that an external exhaust unit for recovering and exhausting the inert gas leaking from the shielding member is further provided outside the shielding member. Thereby, the surrounding environment of the exposure apparatus can be maintained at a constant pressure, and the inert gas can be efficiently recovered.

According to a preferred embodiment of the present invention, it is preferable that at least a part of the shielding member is formed of a member that transmits alignment light. This allows
The conventional alignment method can be used as it is.

According to a preferred embodiment of the present invention, there is provided a substrate chuck mounted on the stage, and a member for gently changing the height between the substrate chucked by the substrate chuck and the periphery thereof. It is preferable to further include Thus, a sudden change in the aperture ratio below the optical path space can be suppressed, and the exhaust efficiency in the optical path space can be increased.

According to a preferred embodiment of the present invention, the shielding member is disposed, for example, so as to surround a side surface of an optical path space between the projection optical system and the substrate.

According to a preferred embodiment of the present invention, the shielding member surrounds, for example, a side surface of an optical path space between an optical system as an illumination system for illuminating the mask and a mask stage for holding the mask. Are arranged as follows.

According to a preferred embodiment of the present invention, the shielding member is arranged, for example, so as to surround a side surface of an optical path space between a mask stage holding a mask and an optical system as a projection optical system. You.

According to a preferred embodiment of the present invention, the shielding member is disposed, for example, so as to surround a side surface of the first optical path space between the first optical system as the projection optical system and the substrate. And a second shield disposed so as to surround a side surface of the second optical path space between the first shield member, the second optical system as an illumination system for illuminating the mask, and the mask stage holding the mask. A third shielding member disposed so as to surround a side surface of a third optical path space between the mask stage and the first optical system as the projection optical system.

According to a preferred embodiment of the present invention, the inert gas is a nitrogen gas or a helium gas.

Another exposure apparatus of the present invention is an exposure apparatus that projects and transfers a pattern formed on a mask onto a substrate using exposure light, and includes a stage, an optical system, and the stage and the optical system. A shielding member surrounding the side surface of the optical path space including a space through which the exposure light passes, a supply unit for supplying an inert gas to the optical path space surrounded by the shielding member, and when the stage is driven in the horizontal direction. A driving mechanism for dynamically adjusting an interval between at least a part of an end of the shielding member and the stage while driving the stage in the vertical direction.

A method of manufacturing a device according to the present invention includes a step of transferring a pattern to a substrate coated with a photosensitive material using any of the above exposure apparatuses, and a step of developing the substrate. And

[0027]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

[First Embodiment] FIGS. 1 and 2 are views showing a part of an exposure apparatus according to a first embodiment of the present invention. FIG. 1 is a schematic diagram showing a lower portion of a projection optical system (barrel) of an exposure apparatus, a periphery of a wafer, and a control system, and FIG. 2 is a diagram viewed from below AA ′ in FIG.

This exposure apparatus includes a light source for generating short-wavelength laser light such as an F2 excimer laser (not shown) as illumination light, and the illumination light (exposure light) generated by the light source is provided with an appropriate illumination optical member. The reticle (mask) is uniformly illuminated via the reticle. The light (exposure light) transmitted through the reticle reaches the surface of the wafer 103 placed on the wafer stage 102 via various optical members constituting the projection optical system 101, and the reticle pattern is formed thereon. Form an image.

The wafer stage 102 on which the wafer 103 is placed is configured to be movable in a three-dimensional direction (XYZ directions). The reticle pattern is sequentially projected and transferred onto the wafer 103 by, for example, a so-called step-and-scan method in which stepping movement and scan exposure are repeated. Also, when the present invention is applied to an exposure apparatus that repeats stepping and repeat, the configuration is almost the same.

At the time of exposure, a temperature-controlled inert gas (for example, nitrogen gas, helium gas, or the like) is supplied between the final optical member of the projection optical system 101 and the wafer 103 through an air supply valve 111 and an air supply port 112. The exposure light is supplied to a space (hereinafter, an optical path space) 113 including a space through which the exposure light passes and its periphery. Part of the inert gas supplied to the optical path space 113 is
The gas is collected at the exhaust port 117 and exhausted through the exhaust valve 118. As shown in FIGS. 1 and 2, the air supply port 112 and the exhaust port 117 are arranged at positions facing each other across the exposure area (optical path space). Note that the arrows in FIGS. 1 and 2 indicate the flow of the inert gas.

An optical path space 1 is provided below the projection optical system 101.
13 to separate the ambient light from the surrounding atmosphere.
The shielding member 115 is arranged so as to surround the side surface of the light emitting device. An opening for allowing exposure light to pass therethrough is formed below the shielding member 115. Further, a gap is provided between the lower end of the shielding member 115 and the wafer 103 and the wafer stage 102. At least a part of the shielding member 115 is a transparent member 115 that transmits the alignment light.
T.

In order to make the optical path space 113 have a positive pressure with respect to the surrounding atmosphere, the amount of inert gas recovered at the exhaust port 117 is set smaller than the amount of inert gas supplied from the exhaust port 112. I have. The inert gas leaked from the optical path space 113 to the surrounding space through the space between the lower end of the shielding member 115 below the projection optical system 101 and the wafer 103 is supplied to the surrounding atmosphere supplied from the second air supply port 121. At the same time, the gas is collected and exhausted at the second exhaust port 122.

The opening and closing and opening of the valves 111 and 118 are controlled by an environment controller 131, and the stage 102 is controlled by a stage controller 132. Controllers 131 and 132
The other controller not shown is a main controller 13.
By means of 3, overall control is performed in various operations such as wafer exchange, alignment operation, exposure operation and the like. The contents of control by the main controller 133 and the operation state of the exposure apparatus are monitored by the monitoring device 134.

The flow path connecting the optical path space 113 and its surrounding atmosphere exists below the optical path space 113 as described above. In order to reduce the influence of entrainment and diffusion of the surrounding atmosphere by the wafer stage 102 while suppressing the consumption of the inert gas (purge gas), the distance (interval) from the lower end of the shielding member 115 to the wafer 103 must be reduced. preferable. On the other hand, if this interval is too small, the shielding member 1
Since the gas flow at the lower end of 15 becomes worse, the replacement time in the optical path space 113 by the inert gas becomes longer.

In this embodiment, the distance between the lower end of the shielding member 113 and the wafer 103 is determined in consideration of the flow of the surrounding atmosphere in order to make the replacement time less likely to be affected by the surrounding atmosphere. Have been. In particular,
The shielding member 11 on the upstream side of the flow 120 of the surrounding atmosphere
Assuming that the distance between the lower end of 5 and the surface of the wafer 103 is Δh1, and the distance between the lower end of the shielding member 115 and the surface of the wafer 103 downstream of the flow 120 of the surrounding atmosphere is Δh2,
In this embodiment, the shape of the shielding member 115 is designed to satisfy the relationship of Δh1 <Δh2.

In this embodiment, the flow 120 of the surrounding atmosphere and the scanning direction 13 of the wafer stage 102 are different.
0 matches. By making the opposing two sides of the four sides of the shielding member 115 parallel to the scanning direction 130 have the same shape, or by making the shielding member 115 line-symmetric with respect to the scanning direction 130, The concentration unevenness of the inert gas in the scanning direction 130 and the direction (y direction) orthogonal to the optical axis (z direction) can be suppressed. The distance between the lower end of the remaining two sides (two sides orthogonal to the scanning direction) of the four sides of the four side shielding members surrounding the side surface of the optical path space 113 and the wafer 103 is, for example, the upstream side of the flow of the surrounding atmosphere. The distance is preferably equal to the distance Δh1 from the lower end of the member to the wafer 103.

The structure of the shielding member 115 in this embodiment can also be applied to an exposure apparatus of a stepping and repeat system, and in this case, similarly, the time required for replacing the gas in the optical path space can be shortened. .

[Second Embodiment] FIGS. 3 and 4 show a part of an exposure apparatus according to a second embodiment of the present invention. FIG. 3 is a schematic diagram showing the lower part of the projection optical system (barrel) of the exposure apparatus and the periphery of the wafer, and FIG.
It is the figure which looked down from A '. 3, components 131 to 134 in FIG. 1 are omitted for convenience of description.

In this embodiment, the wafer stage 10
The distance from the lower end to the wafer of a part of the shielding member is changed in accordance with the scanning direction (moving direction) of Step 2.
Specifically, of the four side element shielding members constituting the shielding member, the distance from the lower end of the one side element shielding member on the scanning direction side during the exposure operation to the wafer is shortened, and the distance on the opposite side in the scanning direction is reduced. The distance from the lower end of the element shielding member on one side to the wafer is increased.

As shown in FIGS. 3 and 4, the shielding member of this embodiment includes first and second
The element shielding members 211 and 212 and the third and fourth element shielding members 213 and 214 parallel to the scanning direction constitute four sides surrounding the side surface of the optical path space 113. Of the four sides, at least the element shielding members 211 and 212 that are orthogonal to the scanning direction have their spacing from the lower end to the wafer 103 changed according to the scanning direction (moving direction) of the wafer stage 102. Driving of the first element shielding member 211 for adjusting the interval is performed by the first driving mechanism 201, and driving of the second element shielding member 212 is performed by the second driving mechanism 202.

The first element shielding member 211 and the gas supply port 11
The two side walls can be connected to each other by, for example, an accordion-like connecting member folded in a zigzag shape or a flexible sheet-like connecting member. By employing such a connection member, the first element shielding member 211 and the gas supply port 11
2 is maintained airtight between the side wall of the optical path space 113 and the passage through which the inert gas leaks from the optical path space 113 to the surrounding space.
Can be restricted to below.

Third and fourth element shielding members 212 and 21
It is preferable that 3 or at least a part thereof is formed of a transparent member that transmits alignment light.

The wafer stage 102 is moved leftward (x
When scanning (moving) in the negative direction of the axis), the lower end of the first element shielding member 211 on the scanning direction side and the wafer 1
The first and second driving mechanisms 201 are arranged such that the distance between the lower end of the second element shielding member 212 on the opposite side of the scanning direction and the wafer 103 is increased so as to reduce the distance between the wafer 103 and the scanning direction.
And 202 are controlled. First and second drive mechanisms 201
And 202 are, for example, a main controller (1 in FIG. 1).
33 (corresponding to 33). Conversely, the wafer stage 102 is moved to the right (x
When scanning (moving) in the positive direction of the axis), the lower end of the second element shielding member 212 on the scanning direction side and the wafer 1
First and second drive mechanisms 201 such that the distance between the lower end of the first element shielding member 211 on the opposite side of the scanning direction and the wafer 103 is increased so that the distance between the first and second driving mechanisms 201 and 03 is reduced.
And 202 are controlled.

By such control, the amount of the inert gas ejected to the side where the wafer 103 enters is increased, and the inert gas in the optical path space 113 due to the entrainment of the surrounding atmosphere accompanying the movement of the wafer stage 102 is increased. Concentration reduction can be suppressed. Further, the replacement time of the gas in the optical path space 113 can be reduced.

When the moving speed of the wafer stage 102 is increased, the surrounding atmosphere is drawn into the optical path space 113 by the wafer stage 103 and the influence of the surrounding atmosphere becomes remarkable. Therefore, when increasing the moving speed of the wafer stage 102, it is preferable to reduce the distance between the lower end of the shielding member and the wafer. In this case, although the replacement time becomes longer, the influence of the surrounding atmosphere and the influence of the surrounding atmosphere can be reduced.

In this embodiment, the driving sections are provided in the first element shielding section and the second element shielding section to suppress the entanglement of the wafer stage 103 and to shorten the replacement time of the inert gas in the optical path space 113. When the replacement time in the optical path space 113 needs to be shortened, for example, after the wafer is replaced, the drive unit is attached only to the element shielding member in the direction opposite to the moving direction when the stage enters, and toward the entering stage side. In addition, the amount of inert gas to be ejected can be increased, and the exhaust efficiency can be increased, so that the replacement time can be shortened. Also,
After the entry of the stage is completed, or before the replacement with the inert gas in the optical path space 113 is completed, or after the completion, the element shielding member having the driving unit is set to the same height as the other shielding members, so that the optical path space 113 Can be shortened, and the maintenance of the inert gas concentration can be facilitated.

[Third Embodiment] It is immediately after the replacement of the wafer that the reduction of the gas replacement time in the optical path space is most strongly required. After that, it is more important to maintain the atmosphere in the optical path space than to shorten the replacement time.

Therefore, in this embodiment, by controlling the height of the wafer stage when the wafer stage enters the optical path space, the replacement time at the time of entry is reduced, and the atmosphere in the optical path space after the entry is controlled. Effective maintenance of

FIG. 5 is a view showing a part of an exposure apparatus according to a third embodiment of the present invention. FIG. 6 is a diagram illustrating control of the wafer stage in the z direction (height direction). The wafer stage 102 has, for example, Z on the XY stage 102xy.
It has a structure on which the stage 102z is mounted.

In this embodiment, the wafer stage 10
In the period from the time when the wafer 103 on the second 2 enters the optical path space 113, that is, the exposure area to the time α, the wafer 10 is moved a predetermined distance (for example, 1 mm) from the height at the time of normal exposure.
Then, the height of the wafer 103 is reduced, and then the wafer 103 is raised to the height at the time of normal exposure. Such height control is performed by the Z stage 102z. The time α is determined so that the oxygen concentration in the optical path space 113 decreases to a predetermined value within this time, and the replacement is almost completed.

This embodiment can be combined with the first and second embodiments described above.

[Fourth Embodiment] FIG. 7 shows a fourth embodiment of the present invention.
FIG. 14 is a diagram illustrating a part of an exposure apparatus according to a fourth embodiment. In this embodiment, the replacement time is further reduced by adding the following two configurations to the first to third embodiments.

First, a height adjusting plate 181 is provided outside the wafer 103 on the wafer stage 102 so as to be inclined so that the height change between the wafer 103 and the outside is gentle. I have. This height adjustment plate 18
1 suppresses a sudden change in the aperture ratio below the optical path space 113 when the wafer 103 enters the optical path space 113,
The exhaust efficiency of the optical path space 113 is improved.

Secondly, there are provided two opposed supply ports 193 and 194 and flow controllers 191 and 192 for controlling the flow rate of the inert gas supplied to the optical path space 113 through the two supply ports 193 and 194. Supply port 194
The supply amount of the inert gas from the supply port 193 is made larger than the supply amount of the inert gas from the supply port 193 on the downstream side. From the downstream supply port 193, for example, an inert gas is supplied only to the upper part in the optical path space 113. Here, the optical path space 113
Since the gas inside has a strong tendency to flow in the same direction as the gas in the surrounding space, the supply amount of the inert gas from the upstream supply port 194 is made larger than the supply amount of the inert gas from the downstream supply port 193. The larger the number, the shorter the gas replacement time in the optical path space 113 can be. Further, when the inert gas is supplied only from one direction, the replacement of the gas in a portion far from the supply port (for example, a portion P in FIG. 7) tends to be delayed, and thus the supply port opposed to the supply port as described above. Preferably, 193 and 194 are provided.

By adding all or a part of the above two configurations to the first to third embodiments, the exhaust efficiency of the optical path space 113 can be further increased, and the replacement time can be further reduced.

As described above, when the inert gas is supplied from only one of the portions marked P in FIG. 7, the flow of the gas tends to be slow. Therefore, when processing a wafer that emits contaminants, the contaminants tend to accumulate in the P portion. However, such a problem can be solved by supplying an inert gas to the optical path space 113 from the opposed supply ports 193 and 194 as in the present embodiment.

[Fifth Embodiment] The invention applied between the projection optical system and the wafer stage in the above-described first to fourth embodiments is the same as that between the illumination optical system and the reticle stage, and The present invention can also be applied between a reticle stage and a projection optical system. FIG. 8 is a view showing an exposure apparatus to which the present invention is applied between a projection optical system and a wafer stage, between an illumination optical system and a reticle stage, and between a reticle stage and a projection optical system. .

In the exposure apparatus shown in FIG.
3 first optical path space 2 between final optical member (cover glass) 214 and wafer chuck 204 (wafer 212).
61, the opposing element shielding members 2
A first element comprising a four-sided element shielding member including 21 and 222;
A shielding member is provided. In this exposure apparatus,
Illumination optical system 201 that illuminates reticle (mask) 211
A second shielding member composed of four-sided element shielding members including opposed element shielding members 241 and 242 is arranged so as to surround the side surface of the second optical path space 262 between the reticle stage 202 (reticle 211) and the reticle stage 202 (reticle 211). Have been. Also,
In this exposure apparatus, a third side composed of four-sided element shielding members including opposed element shielding members 251 and 252 so as to surround the side surface of the third optical path space 263 between the reticle stage 202 and the projection optical system 203. Are disposed.

The opposing shielding member 221 of the first shielding member
And 222 are first drive mechanisms 223 and 22 respectively.
4 is driven in accordance with the moving direction (scanning direction) of the wafer stage 205, and the shielding members 221 and 222 are driven.
The distance from the lower end to the wafer 212 is adjusted separately.

The opposing shielding member 241 of the second shielding member
And 242 are second drive mechanisms 243 and 24, respectively.
4, the reticle stage 202 is driven in accordance with the moving direction (scanning direction) of the reticle stage 202, and the shielding members 241 and 24 are driven.
The distance from the lower end of 2 to the reticle 211 is adjusted separately.

The opposing shielding member 251 of the third shielding member
And 252 are third drive mechanisms 253 and 25, respectively.
4, the reticle stage 202 is driven in accordance with the moving direction (scanning direction) of the reticle stage 202, and the shielding members 251 and 25 are driven.
The distance from the upper end of 2 to the lower end of reticle stage 202 is separately adjusted.

An inert gas (eg, nitrogen gas, helium gas) is supplied to the first to third optical path spaces 261 to 263.

In FIG. 8, reticle stage 202 is controlled by a stage controller in synchronization with wafer stage 205, and each valve is controlled by an environment controller.
Each controller is controlled by a main controller.

[Application Example of Exposure Apparatus] Next, a manufacturing process of a semiconductor device using the above exposure apparatus will be described.
FIG. 9 shows a flow of the whole semiconductor device manufacturing process. In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask fabrication), a mask is fabricated based on the designed circuit pattern. on the other hand,
In step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is referred to as a preprocess, and an actual circuit is formed on the wafer by lithography using the above-described mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer manufactured in step 4, and an assembly process (dicing,
Bonding), an assembly process such as a packaging process (chip encapsulation) and the like. Step 6 (Inspection), Step 5
Inspections such as an operation check test and a durability test of the semiconductor device manufactured in the above are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 10 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer. Step 16
In (exposure), the circuit pattern is transferred to the wafer by the above-described exposure apparatus. Step 17 (development) develops the exposed wafer. Step 18 (etching) removes portions other than the developed resist image. Step 19 (resist stripping) removes unnecessary resist after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

[0067]

According to the present invention, for example, the time required for replacing a gas in a space (optical path space) through which exposure light passes with an inert gas can be reduced. Thereby, for example, the throughput can be improved.

[Brief description of the drawings]

FIG. 1 is a diagram showing a part of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a view looking downward from AA ′ of FIG. 1;

FIG. 3 is a view showing a part of an exposure apparatus according to a second embodiment of the present invention.

FIG. 4 is a view looking downward from AA ′ in FIG. 3;

FIG. 5 is a view showing a part of an exposure apparatus according to a third embodiment of the present invention.

FIG. 6 is a diagram illustrating control of a wafer stage in a z-direction (height direction) according to a third embodiment of the present invention.

FIG. 7 is a diagram illustrating a part of an exposure apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a view showing a part of an exposure apparatus according to a fifth embodiment of the present invention.

FIG. 9 is a diagram showing a flow of an overall semiconductor device manufacturing process.

FIG. 10 is a diagram showing a detailed flow of a wafer process in FIG. 9;

FIG. 11 is a diagram illustrating a problem in a conventional exposure apparatus.

Claims (24)

[Claims] 1. An exposure apparatus for projecting and transferring a pattern formed on a mask onto a substrate using exposure light, wherein the exposure light passes between the stage, an optical system, and the stage and the optical system. A shielding member that surrounds a side surface of the optical path space including the space to be provided, and a supply unit that supplies an inert gas to the optical path space surrounded by the shielding member.A part of an end of the shielding member and the stage And an interval between another part of the end portion of the shielding member and the stage is different from or different from each other. 2. The shielding member includes first and second element shielding members that are disposed to face each other, and of the first and second element shielding members that are upstream of the flow of the surrounding atmosphere. The distance between the end and the stage is relatively small, and the distance between the end of the element shielding member on the downstream side of the flow of the ambient atmosphere among the first and second element shielding members and the stage is relatively small. The exposure apparatus according to claim 1, wherein the exposure apparatus is large. 3. The exposure apparatus according to claim 2, wherein the first and second element shielding members are respectively arranged orthogonally to a flow direction of a surrounding atmosphere in the optical path space. . 4. A driving mechanism for making a distance between a part of an end of the shielding member and the stage different from a distance between another part of the end of the shielding member and the stage. The exposure apparatus according to claim 1, further comprising: 5. The shielding member includes first and second element shielding members disposed to face each other, and the driving mechanism drives the first element shielding member to cause an end of the first element shielding member to move to the stage. At least one of: a first driving unit that adjusts an interval between the first and second driving units and a second driving unit that drives the second element shielding member to adjust an interval between an end of the second element shielding member and the stage. The exposure apparatus according to claim 4, further comprising a unit. 6. The exposure apparatus according to claim 5, wherein the first and second element shielding members are respectively arranged orthogonal to a moving direction of the stage. 7. The driving mechanism may further include a gap between an end of the first element shielding member and the stage and an end of the second element shielding member and the stage, depending on a moving direction of the stage. The exposure apparatus according to claim 5, wherein an interval between the distances is adjusted. 8. The driving mechanism relatively reduces an interval between an end of the first and second element shielding members on an element shielding member on a movement direction side of the stage and the stage,
The distance between an end portion of the first and second element shielding members on the side opposite to the moving direction of the stage and an end of the element shielding member is relatively increased. 7. The exposure apparatus according to 6. 9. The apparatus according to claim 1, further comprising a drive mechanism for adjusting an interval between at least a part of an end of the shielding member and the stage according to a moving speed of the stage. Exposure equipment. 10. The exposure apparatus according to claim 4, further comprising a connection member that connects the shielding member and the optical system. 11. The exposure apparatus according to claim 10, wherein the connection member has a structure for maintaining airtightness between the shielding member and the optical system. 12. The apparatus according to claim 1, further comprising a stage controller for controlling the stage to adjust an interval between an end of the shielding member and the stage. 2. The exposure apparatus according to claim 1. 13. When the predetermined area on the stage enters the optical path space, the stage controller sets a distance between an end of the shielding member and the stage as a first distance, and thereafter, 13. The exposure apparatus according to claim 12, wherein the stage is controlled so that the distance is smaller than the first distance. 14. The apparatus according to claim 1, wherein the supply unit supplies the inert gas to the optical path space so that the optical path space has a positive pressure with respect to a surrounding space. 2. The exposure apparatus according to claim 1. 15. The apparatus according to claim 1, further comprising an external exhaust unit provided outside the shielding member to collect and exhaust the inert gas leaking from the shielding member.
The exposure apparatus according to any one of the above items. 16. The exposure apparatus according to claim 1, wherein at least a part of the shielding member is formed of a member that transmits alignment light. 17. The semiconductor device according to claim 1, further comprising: a substrate chuck mounted on the stage; and a member for smoothing a change in height between the substrate chucked by the substrate chuck and a periphery thereof. Claims 1 to 16
The exposure apparatus according to any one of the above items. 18. The apparatus according to claim 1, wherein the shielding member is arranged so as to surround a side surface of an optical path space between the projection optical system and the substrate.
Exposure apparatus according to Item. 19. The apparatus according to claim 19, wherein the shielding member is arranged to surround a side surface of an optical path space between an optical system as an illumination system for illuminating the mask and a mask stage for holding the mask. An exposure apparatus according to any one of claims 1 to 16. 20. The apparatus according to claim 1, wherein the shielding member is disposed so as to surround a side surface of an optical path space between a mask stage for holding a mask and an optical system as a projection optical system. Item 17. The exposure apparatus according to any one of Items 16. 21. A first shielding member disposed so as to surround a side surface of a first optical path space between a first optical system as a projection optical system and a substrate, and a mask, and illuminates a mask. A second shielding member disposed so as to surround a side surface of a second optical path space between a second optical system as an illumination system and a mask stage holding the mask; and as the mask stage and the projection optical system, The first of
The exposure according to any one of claims 1 to 16, further comprising: a third shielding member disposed so as to surround a side surface of the third optical path space between the optical system and the optical system. apparatus. 22. The method according to claim 1, wherein the inert gas is a nitrogen gas or a helium gas.
2. The exposure apparatus according to claim 1. 23. An exposure apparatus for projecting and transferring a pattern formed on a mask onto a substrate using exposure light, wherein the exposure light between the stage, the optical system, and the stage and the optical system passes therethrough. A shielding member surrounding a side surface of an optical path space including a space to be closed, a supply unit for supplying an inert gas to the optical path space surrounded by the shielding member, and a vertically moving stage when the stage is driven in a horizontal direction. A driving mechanism that dynamically adjusts a distance between at least a part of an end of the shielding member and the stage while driving. 24. A method of manufacturing a device, comprising: using the exposure apparatus according to claim 1 to transfer a pattern onto a substrate coated with a photosensitive material; Developing a substrate. A method for manufacturing a device, comprising: