JP2002373405A - Magnetic detection element, manufacturing method therefor and magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic detection element capable of achieving a high recording density corresponding to a narrow gap, while enhancing electric insulation between a terminal layer and a shielding layer. SOLUTION: The magnetic detection element has a lower shield layer 14, a magneto-resistance effect element 2, an upper gap layer 37 and an upper shielding layer 38 on a substrate 12. In both side areas of the magnetoresistance effect element 2, pairs of conductive terminal layers (32, 33) and (34, 35) formed with gaps in a track width direction are stacked by at least two layers, and the track width direction gap of the pair of conductive terminal layers for the upper terminal layer 35 is set larger than the track width direction gap of the lower terminal layers 32, 33, 34. A protective film 36a is formed, in at least a part of the inner side of the track width direction on the lower terminal layer, and the upper terminal layer (35) is formed from the protective layer 36a to the lower terminal layers (32, 33, 34).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensing element, a method for manufacturing the magnetic sensing element, and a magnetic head capable of reading high-density recorded information utilizing the magnetoresistance effect.

[0002]

2. Description of the Related Art In recent years, for example, as a magnetic head in a high-density recording system, a magnetic head utilizing the so-called magnetoresistive effect, in which the electric resistance of a magnetoresistive element changes according to a signal magnetic field from a recording medium, attracts attention. Have been. Here, a plurality of magnetic detecting elements are formed on one substrate (wafer), and the magnetic detecting elements are individually cut out from the substrate (wafer) to complete a magnetic head as a product. Hereinafter, the state of the magnetic sensing element formed on the substrate will be described.

[0003] In this type of magnetic sensing element, a lower gap layer is formed on a lower shield layer, a magnetoresistive element is formed on the lower gap layer, and terminal layers are joined to both ends of the magnetoresistive element. The upper gap layer and the upper shield layer are sequentially formed on the magnetoresistive element and the terminal layer.

By the way, the data density for magnetic recording on a recording medium tends to increase, and with the increase in the recording density, a narrow gap of a magnetic head is required. In response to this requirement, the dielectric strength between the upper shield layer and the terminal layer, which face each other up and down with the upper gap layer therebetween, and between the lower shield layer and the hard bias layer, is reduced, and the insulation is significantly reduced. The problem is that it does.

[0005] The reason is as follows.
Often formed on a bias layer that applies a bias magnetic field to the magnetoresistive element, the total film pressure of the terminal layer and the bias layer becomes thicker than the film thickness of the magnetoresistive element,
Therefore, the inclination angle of the inclined portion at the end where the terminal layer is joined to the magnetoresistive effect element is steep, thereby increasing the step at the inclined portion of the terminal layer.

If the upper gap layer is formed on the entire surface of the terminal layer with the above-mentioned step, the coverage of the upper gap layer is reduced at the step, and the thickness of the upper gap layer at the step of the terminal layer is reduced. In this case, the withstand voltage in this portion is reduced, and the withstand voltage between the upper shield layer and the terminal layer, which are vertically opposed to each other with the upper gap layer therebetween, is reduced, and the insulative property is reduced. I understood.

Therefore, for example, as shown in FIG.
It has been studied to form a layer type terminal layer on both sides of the magnetoresistive element.

That is, as shown in FIG.
A lower shield layer 101 and a lower gap layer 102 are stacked thereon, and are patterned on the lower gap layer 102 to form a magnetoresistive element 103. The width of the magnetoresistive element 103 is set in accordance with the track width Tw of the recording medium.

Further, a bias underlayer 104 and a bias layer 1 are provided on both sides of the patterned magnetoresistance effect element 103.
05 and the lower terminal layer 106 are formed in this order, and the upper terminal layer 107 is formed on the lower terminal layer 106, so that a step formed between the magnetoresistive effect element 103 and the terminal layers 106 and 107 is reduced. The terminal layers 106, 10 located above and below the upper gap layer 108 are made as small as possible.
7 and the upper shield layer 109 are improved.

In this type of magnetic sensing element, FIG.
After the upper and lower terminal layers 106 and 107 are formed as shown in FIG. 19, a process for defining the dimensions in the height direction (vertical direction in FIG. 19) of the magnetoresistive effect element 103 including the terminal layers 106 and 107 is performed. Will be Therefore, as shown in FIG. 19, the magnetoresistance effect element 103 and the upper terminal layer 107 are formed.
A mask 110 for height processing is formed over the upper surface, and processing by ion milling is performed while a necessary area is covered with the mask 110 for height processing.

In this case, in order to improve the coverage of the upper gap layer 108, the upper terminal layer 107 is formed to recede in a direction away from the magnetoresistive element 103, and is joined to the magnetoresistive element 103. The end (hatched portion) 106a of the lower terminal layer 106 extending in the height direction (the vertical direction in FIG. 18) is
7 is exposed inside the track width (Tw) direction. Therefore, the end 106 of the exposed lower terminal layer 106 is formed.
a is cut off by ion milling.

A current is supplied to the terminal layers 106 and 107 from the trailing edge in the height direction (upper end in FIG. 19) and flows into the magnetoresistive element 103. It flows through.

However, if the end 106a of the lower terminal layer 106 which is joined to the magnetoresistive effect element 103 and extends in the height direction (vertical direction in FIG. 19) is cut by ion milling, it corresponds to the cut amount. However, there is a problem that the distance through which the current flows increases and the electric resistance value increases.

[0014]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a magnetic sensing element, a method for manufacturing a magnetic sensing element, and a magnetic head, which have improved electrical insulation between a terminal layer and a shield layer and improved output.

[0015]

SUMMARY OF THE INVENTION To achieve the above object, a magnetic sensing element according to the present invention comprises a lower shield layer on a substrate, a magnetoresistive element formed on the lower gap layer, and a magnetoresistive element. A pair of upper gap layers formed on the upper gap layer and upper shield layers formed on the upper gap layer, and formed on both sides of the magnetoresistive element at intervals in the track width direction. At least two conductive terminal layers are stacked, and the interval in the track width direction of the pair of conductive terminal layers with respect to the upper terminal layer is set wider than the interval in the track width direction of the lower terminal layer. A protective layer is formed on at least a part of the inner side in the track width direction on the terminal layer, and the upper terminal layer is formed from above the protective layer to the lower terminal layer.

[0016] The protective layer may be formed in a height direction from the medium facing surface to cover a lower terminal layer.

Further, according to the present invention, there is provided a magnetic sensing element comprising: a lower shield layer on a substrate; a magnetoresistive element formed on the lower gap layer; and an upper gap layer formed on the magnetoresistive element. And an upper shield layer formed on the upper gap layer, and at least two layers of a pair of conductive terminal layers formed on both sides of the magnetoresistive element at intervals in the track width direction. The distance between the pair of conductive terminal layers in the track width direction with respect to the upper terminal layer is set to be wider than the distance in the track width direction between the lower terminal layer and the upper terminal layer. The upper terminal layer is laminated so as to protrude inward in the track width direction from an end of a surface joined to the lower terminal layer immediately below the lower terminal layer.

Further, the magnetic sensing element according to the present invention comprises a substrate, a lower shield layer, a magnetoresistive element formed on the lower gap layer, and an upper gap layer formed on the magnetoresistive element. And an upper shield layer formed on the upper gap layer, and at least two layers of a pair of conductive terminal layers formed on both sides of the magnetoresistive element at intervals in the track width direction. The distance between the pair of conductive terminal layers in the track width direction with respect to the upper terminal layer is set to be wider than the distance in the track width direction between the lower terminal layer and the upper terminal layer. Facing the upper surface of the lower terminal layer,
A first inclined surface having an angle θ1 with respect to the lower terminal layer upper surface, and a first inclined surface refracted from the first inclined surface and provided above the first inclined surface with respect to the lower terminal layer upper surface. Angle θ
2 having a second inclined surface having an angle θ1 <angle θ2
Is characterized by having the following relationship.

Further, the terminal layer may include a bias layer for applying a bias magnetic field to the magnetoresistive element. The magnetoresistive element may include at least an antiferromagnetic layer, a fixed magnetic layer whose magnetization direction is fixed by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic layer, and a magnetization that varies with an external magnetic field. And a free magnetic layer. In this case, a pair of conductive terminal layers formed at both sides of the magnetoresistive effect element at intervals in the track width direction include a bias layer for aligning the magnetization direction of the free magnetic layer in a fixed direction. Is desirable.

The conductive terminal layer may be formed by laminating a plurality of conductive layers. Further, the length of the end portion of the lower terminal layer extending in the height direction by being joined to the end portion of the magnetoresistive effect element is set to be at least twice as long as the length of the magnetoresistive effect element in the height direction. Is desirable.

Further, a magnetic head according to the present invention comprises the above-mentioned magnetic detecting element.

Further, the method of manufacturing a magnetic sensing element according to the present invention includes: (a) forming at least a lower shield layer, a lower gap layer, and a magnetoresistive element layer on a substrate;
(B) a step of patterning both side regions of the magnetoresistive element layer in the track width direction into a predetermined shape; and (c) a pair of first and second side regions of the magnetoresistive effect element at predetermined intervals in the track width direction. (D) forming a protective layer on at least an inner end of the first conductive terminal layer in the track width direction;
(E) forming a pair of second conductive terminal layers from the protective layer to the first conductive terminal layer;
(F) forming an upper gap layer at least on the magnetoresistive element and the second conductive terminal layer; (g)
Forming an upper shield layer provided on the upper gap layer.

In the step (d), the thickness of the protective layer is determined by the following formula: the thickness of the protective layer> the thickness of the magnetoresistive element × (the milling rate of the magnetoresistive element / the milling rate of the protective layer). It is desirable to satisfy the relationship.

[0024]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of the structure of a magnetic sensing element 1 according to an embodiment of the present invention as viewed from a medium facing surface, and FIG. 2 is a cross-sectional view taken along line AA of FIG. FIG.
FIG. 3 is an enlarged cross-sectional view showing a relationship between a magnetoresistive element, two upper and lower terminal layers, and a protective layer. In the drawings, X indicates the track width direction, Y indicates the height direction, and Z indicates the stacking (height) direction. In FIG. 2, A indicates the medium facing surface.

In the magnetic sensing element 1 of the embodiment shown in FIGS. 1, 2 and 3, a lower shield layer 14 is formed on a substrate (wafer) 12 with a protective layer 13 interposed therebetween.
4, a lower gap layer 15 is formed, and the magnetoresistive element 2 is formed on the lower gap layer 15. The magnetoresistance effect element 2 of the magnetic detection element 1 according to this embodiment has a giant magnet (GMR) utilizing a giant magnetoresistance effect.
oresistance) A spin-valve magnetoresistive element, which is a kind of element, is used. The spin-valve magnetoresistive element 2 has a structure having an antiferromagnetic layer, a fixed magnetic layer, a nonmagnetic conductive layer, and a free magnetic layer in this order. The width dimension (Tw) of the magnetoresistive element 2 is The setting is made in accordance with the track width of the recording medium. The magnetoresistive element 2 may be an anisotropic magnetoresistive element (AMR) using the anisotropic magnetoresistive effect. In short, the magnetoresistive element 2 has a characteristic that its electric resistance changes according to a signal magnetic field from a recording medium. If it is a device, it is not limited to the described magnetoresistance effect element.

In this embodiment, the magnetoresistive element 2 is patterned in a substantially trapezoidal shape, and both end faces in the track width direction of the magnetoresistive element 2 are formed as continuous inclined surfaces.

On both sides of the magnetoresistive element 2 in the track width direction, the bias underlayer 3 is formed on the lower gap layer 15.
2, a bias layer 33 is formed via the bias layer 33.
The terminal layer 34 is formed thereon. Here, the bias layer 33 is a layer for applying a bias magnetic field to the magnetoresistive element 2. In the illustrated spin-valve magnetoresistive element, the bias layer 33 acts to supply a bias magnetic field to the free magnetic layer to align the magnetization direction of the free magnetic layer in a certain direction.

Further, at both sides of the magnetoresistive element 2, at least two pairs of conductive terminal layers (32, 33, 34, 35) formed at intervals in the track width (Tw) direction are laminated. And the pair of conductive terminal layers (32, 33, 34, 35) for the upper terminal layer (35).
Of the terminal layers (32, 33, 34) in the track width direction are set to be wider than those in the lower terminal layers (32, 33, 34). Further, a protective layer 36a is formed on the lower terminal layers (32, 33, 34) and at least partially on the inner side in the track width direction. Further, the terminal layers (32, 33, 3
An upper terminal layer (35) is formed over 4).

Here, in the example of FIG. 1, the lower terminal layer is
It is composed of a plurality of conductive layers composed of a bias underlayer 32, a bias layer 33, and a terminal layer 34, and the upper terminal layer is composed of a single conductive layer composed of a terminal layer 35. The lower terminal layer (32, 33, 34) is composed of a plurality of conductive layers (32, 33, 34), but may have a single-layer structure. The upper terminal layer (35) is formed as a single layer, but may be formed by laminating a plurality of conductive layers.

Further, the lower terminal layers (32, 33, 3
4) Part of the inner side in the track width direction includes an end 34c that is joined to the magnetoresistive element 2 at the shortest distance, and at least the end 34c of the lower terminal layer (particularly, the terminal layer 34). Are covered with a protective layer 36a.

Therefore, the lower terminal connected to the magnetoresistive element 2 at the shortest distance during the so-called MR-H processing for defining the dimension in the height direction (Y direction in FIG. 2) with respect to the magnetoresistive element 2. End 34 of layer (especially terminal layer 34)
c is covered with the protective layer 36a, so that the end 34c is not removed by milling as described in a manufacturing method described later, and the lower terminal layers (32, 33,
A current can be supplied to the magnetoresistive element 2 through the shortest distance through the end 34c of 34), so that an appropriate current can be supplied without increasing the electric resistance value, and as a result, the characteristics of the magnetic sensing element are improved. Can be done.

In the embodiment shown in FIGS. 1 and 2, an end portion which is joined to the magnetoresistive element 2 at the shortest distance is provided on a part of the inner side in the track width direction on the lower terminal layer (32, 33, 34). The protective layer 36a is formed in the height direction (Y direction in FIG. 2) from the facing surface A of the recording medium, including the end surface of the lower terminal layer (particularly, the terminal layer 34). ing. In this case, it is not necessary to form the protective layer 36a limited to the end 34c of the lower terminal layer (particularly, the terminal layer 34), and there is an advantage that the protective layer 36a can be easily formed.

As shown in FIG. 3, the inner end 35a of the upper terminal layer (35) in the track width direction faces the upper surface 34d of the lower terminal layer (particularly, the terminal layer 34). A first inclined surface 35b having an angle θ1 with respect to the upper surface 34d of the layer (particularly, the terminal layer 34); and a lower layer provided above the first inclined surface 35b by being refracted from the first inclined surface 35b. The second having an angle θ2 with respect to the upper surface of the terminal layer
It is desirable to have the inclined surface 35c.
The angles θ1 and θ2 are set in a relationship of angle θ1 <angle θ2.

In this way, the upper gap layer 37 formed from the magnetoresistive element 2 to the upper terminal layer (35) is formed at the boundary between the magnetoresistive element 2 and the upper terminal layer (35). , The coverage of the upper gap layer 37 is improved, and the electrostatic withstand voltage at the boundary between the magnetoresistive element 2 and the upper terminal layer (35) can be improved. it can.

In FIG. 3, the upper terminal layer (35)
The inclined surface 35b has angles θ1 and θ2,
It is not limited to this. That is, the terminal of the upper layer is formed so that the upper terminal layer (35) protrudes inward in the track width direction from the end (inclined surface) 35b of the surface joined to the lower terminal layer immediately below the inner side in the track width direction. Layer (35)
May be laminated. In other words, in the case of FIG. 3, the end 35b of the upper terminal layer (35) is the protective layer 36a.
The upper terminal layer (35) may be stacked in a state where the terminal layer protrudes inward in the track width direction. In any case, since the protective layer 36a is provided and the lower terminal layer under the protective layer 36a is protected, low resistance can be realized.

The upper gap layer 3 is formed on the magnetoresistive element 2 and the conductive terminal layers (32, 33, 34, 35).
7, and an upper shield layer (not shown, corresponding to the upper shield layer 109 in FIG. 18) is provided on the upper gap layer 37.

The protective layer 36a is electrically insulative and is formed of a material having a lower etching rate than the magnetoresistive effect element 2, for example, alumina (Al).
₂ 0 ₃₎ is used. Further, this protective layer 36a
At least a milling rate and a film thickness d that are not completely milled but remain partially during the milling time of the magnetoresistive element 2 are used. That is, the specific film thickness d of the protective layer 36a is set to a numerical value that satisfies the following expression: d> d1 · (t2 / t1). Here, d1: the thickness of the magnetoresistance effect element 2, t1: the milling rate of the resistance layer 20 forming the magnetoresistance effect element 2, and t2: the milling rate of the protective layer 36a.

Further, as shown in FIG. 10, an end 34a (including an end 34c) of a lower terminal layer (particularly, terminal layer 34) joined to the end of the magnetoresistive element 2 and extending in the height direction.
It is desirable to set the length L1 to be at least twice, and preferably at least ten times, the length L2 of the magnetoresistive element 2 in the height direction. This will be described in detail in the embodiment section described later.

In the state of FIG. 1, the magnetic sensing elements 1 are formed in a matrix on the substrate 12, but the lower shield layer 14, the lower gap layer 15, the magnetoresistive element 2,
The conductive terminal layers (32, 33, 34, 35), the upper gap layer 37, and the upper shield layer as one unit constitute the substrate 12
The magnetic head as a product is formed by individually cutting the magnetic head. This magnetic head is attached to the trailing end of a floating slider provided in a magnetic recording device such as a hard disk device (not shown), and reads recorded magnetic data recorded on a recording medium (not shown). In FIG. 1, the moving direction of a recording medium on which data is recorded in a magnetic system is the Z direction, and a signal magnetic field from this recording medium acts on the magnetoresistive element 2 from the Y direction. The magnetic head element (magnetic detecting element) 1 shown in FIG. 1 is used for reproduction for reproducing recorded data from a recording medium, but is recorded on an upper shield layer (not shown) by a current for recording data by a dielectric method. A recording inductive magnetic head element for writing data on a medium may be formed. In addition,
Although the magnetic detection element 1 is used for a magnetic head, the invention is not limited to this, and may be used for a magnetic sensor.

Next, a method of manufacturing the magnetic sensing element 1 shown in FIG. 1 will be described in the order of steps with reference to FIGS. In the figure, X indicates the track width direction, Y indicates the height direction, and Z indicates the stacking (height) direction.

As shown in FIG. 4, first, a protective layer (underlayer) such as alumina (Al ₂ O ₃ ) is formed on a substrate (wafer) 12 formed of a ceramic material such as AlTiC (alumina titanium carbide, AlTiC). Court) 13
, A lower shield layer 14, a lower gap layer 15, and a resistance layer 20 for forming a magnetoresistive element are formed in this order. The lower gap layer 15 is formed of a ceramic having high electrical insulation, for example, alumina (Al ₂ O ₃ ).

Next, as shown in FIGS. 5A, 5B and 6, a resist is applied on the resistance layer 20 for forming the magnetoresistive element 2, and the resist R1 is patterned into a predetermined shape. A mask portion R1A for masking the resistive layer 20 in the shape of the magnetoresistive element 2,
Terminal layers (32, 33, 34) joined to both ends of
The opening R1B that follows the outer shape of is formed.

Subsequently, ion milling is performed on the resistive layer 20 of the magnetoresistive element 2 using the resist R1 as a mask. The resist layer 20 masked on the mask portion R1A of the resist R1 by this ion milling process.
Is patterned into a substantially trapezoidal shape, and the track width (T
Both end surfaces in the w) direction are formed as continuous inclined surfaces, and the magnetoresistive element 2 is formed. In this case, FIG.
6, the upper surface of the lower gap layer 15 located below the resistance layer 20 is over-etched (indicated by a broken line).

Next, as shown in FIGS. 7A and 7B, using the resist R1 as a mask, the opening R1B of the resist R1 is used.
The bias underlayer 32, the bias layer 33, and the terminal layer 34 are sputter-deposited in a predetermined thickness from the bottom on the over-etched portion of the lower gap layer 15.

Here, the bias underlayer 32 is made of Cr,
Any one or more of W, Mo, V, Mn, Nb, and Ta can be selected. Of these, the bias underlayer 3 is formed of a Cr film.
2 is preferably formed. The bias layer 33 is made of Co
The hard bias layer is formed of a hard magnetic material such as a Pt alloy or a CoPtCr alloy. The terminal layer 34 is made of C
A film is formed by sputtering with r or Au. The bias underlayer 32, the hard bias layer 33, and the terminal layer 34 are formed by sputtering with a sputtered particle incident angle θ with respect to a vertical direction (Z direction in the drawing). This sputtered particle incident angle θ
Specifically, it is preferably from 15 ° to 60 °, more preferably from 30 ° to 60 °. Here, the lower terminal layer is formed of a conductive layer including a bias underlayer 32, a bias layer 33, and a terminal layer 34.

Next, as shown in FIGS. 8A and 8B, a protective layer 36 is formed to a required thickness on the terminal layer 34 through the opening R1B of the resist R1 using the resist R1 as a mask. As described above, the protective layer 36 is made of a material that is electrically insulating and has a low etching rate.
For example, the protective layer 36 has an etching rate of 1.
Alumina (Al ₂ O ₃ ) of about 1 (Å / sec) is used, and the film is formed to a thickness of about 200 °.

Next, as shown in FIGS. 9A and 9B, after the protective layer 36 is formed, the resist R1 is removed, and a new resist R2 is applied instead of the resist R1 (FIG. 9A). Shaded area). The end portions 34a, 34b, 34c of the lower terminal layer (particularly, the terminal layer 34) exposed from the upper terminal layer (35) inward and outward in the track width direction from the upper terminal layer (35) in a later step are formed by ion milling. It is patterned into a predetermined shape as a mask for forming a protective layer 36a for preventing deletion. That is, as shown in FIG.
Is a substantially rectangular mask portion R2A that covers the magnetoresistive element 2, and an end 3 of a lower terminal layer (particularly, the terminal layer 34) located inside the upper terminal layer (35) in the track width direction.
A mask portion R2B that covers the protective layer 36 formed in the height direction (the Y direction in FIG. 9A) on the upper terminal layers 4a and 34c, and a lower terminal layer (in particular, the outer terminal layer 35 protrudes outward in the track width direction). The height direction on the end 34b of the terminal layer 34) (FIG. 9)
It is patterned into a predetermined shape having a mask portion R2C that covers the protective layer 36 formed in (Y direction of (A)).
In FIG. 9A, the lower terminal layer (especially the terminal layer 34) is covered with the protective layer 36 and is not visible, but the lower terminal layer (especially the terminal layer 35) exposed from the upper terminal layer (35). The ends 34a, 34b, 34c of the terminal layer 34) are
Since it is characterized by being covered with a, the relationship between the resist R2 and the lower terminal layer (particularly, the terminal layer 34) is clarified by showing reference numerals 34a, 34b, and 34c.

Next, FIGS. 9A and 9B and FIG.
As shown in (A) and (B), the unnecessary protective layer 36 is removed by ion milling using the resist R2 as a mask. By this processing, only the protective layer 36a that covers the ends 34a, 34b, and 34c of the lower terminal layer (particularly, the terminal layer 34) exposed from the upper terminal layer (35) formed in the step in FIG. 10 remains. In FIG. 10A, the ends 34a, 34b, 3 of the lower terminal layer (particularly, the terminal layer 34) are formed.
4c is covered with the protective layer 36a and is invisible, but the ends 34a, 34b and 34c of the lower terminal layer (particularly the terminal layer 34) exposed from the upper terminal layer (35) are covered with the protective layer 36.
a, the protective film 36a and the terminal portions 34a, 34b, and 3 of the lower terminal layer (particularly, the terminal layer 34) are indicated by reference numerals 34a, 34b, and 34c.
4c is clarified.

Next, as shown in FIGS. 11A and 11B,
The terminal layer 35 is formed on the terminal layer 34 using the resist R2 as a mask while leaving the resist R2 patterned in a predetermined shape as described above. Here, the upper terminal layer is formed of a single conductive layer composed of the terminal layer 35. Further, the distance in the track width direction between the pair of conductive terminal layers with respect to the upper terminal layer (35) formed in the step of FIG. 11 is the distance in the track width direction between the lower terminal layers (32, 33, 34). A wider terminal layer (3
5) is formed. Further, an end 35a of the upper terminal layer (35) is formed as an inclined surface.

Next, as shown in FIGS. 12A and 12B,
Patterned lower terminal layer (particularly terminal layer 34)
And on the upper terminal layer (35) and the magnetoresistive element 2,
A resist R3 patterned into a predetermined shape is formed, and MR-H processing is performed using the resist R3 as a mask. This MR-H processing determines the shape and dimensions of the magnetoresistive element 2, the lower terminal layer (particularly the terminal layer 34), and the upper terminal layer (35) in the height direction (vertical direction in FIG. 12A). This is what you do. The resist R3 is a mask portion R3A for masking the magnetoresistive element 2 to determine the shape and dimensions of the magnetoresistive element 2 in the height direction.
And a mask portion R for determining the final shape and dimensions of the lower terminal layer (particularly, the terminal layer 34) and the upper terminal layer (35).
3B.

Subsequently, as shown in FIG. 13, MR-H processing by ion milling is performed using the resist R3 patterned into a predetermined shape as a mask.

In the MR-H processing, the terminal layer 35, the terminal layer 34, the bias layer 33, and the bias underlayer 32, which are unnecessary by ion milling up to the position shown by the solid line in FIG. 13, are removed by ion milling. In this step, the ends 34a, 3a of the lower terminal layer (particularly, the terminal layer 34) are formed.
Since 4b and 34c are covered with the protective layer 36a, they remain without being deleted.

The protective layer 36a is electrically insulative, and is formed of a material having a lower etching rate than the resistance layer 20 of the magnetoresistive element 2, and in this embodiment, alumina (Al ₂ O ₃₎ ) Is used. The protective layer 36a is set at the above-described milling rate and film thickness d so that it is not completely milled at least within the milling time of the resistance layer 20 of the magnetoresistive effect element 2 but remains partially. Milling is performed, and MR-H processing is performed. As described above, as shown in FIG. 10, the length L1 of the end of the lower terminal layer (particularly, the terminal layer 34) joined to the end of the magnetoresistive element 2 and extending in the height direction is equal to the length of the magnetoresistive element 2 Is set at least twice or more, preferably ten times or more, the length L2 in the height direction of the MR-H processing.

Finally, as shown in FIG. 14, on the magnetoresistive element 2 and the upper terminal layer (35), an upper gap layer 37 is formed of a ceramic having high electrical insulation, for example, alumina (Al ₂ O ₃ ). Then, an upper shield layer is formed on the upper gap layer 37. Thereby, the magnetic sensing element 1 shown in FIG. 1 is completed.

(Example) The influence of the length in the height direction of the end of the lower terminal layer of the magnetic sensing element according to the present invention on the resistance value was determined.

FIG. 15 is a plan view of the magnetoresistive element 2 and the lower terminal layer as viewed from above. In FIG. 15, T
Is the track width of the magnetoresistive element 2, and MR-h is the length of the magnetoresistive element 2 in the height direction. Also I
Is the width of the end of the lower terminal layer (particularly the terminal layer 34) in the track width direction, and w is the lower terminal layer (particularly the terminal layer 3).
4) is the length in the height direction of the end portion. The width I of the end of the lower terminal layer (particularly, the terminal layer 34) in the track width direction is
When the ratio was 0.02 μm, 0.04 μm, or 0.08 μm, w and the ratio k (referred to as shape factor) to MR-h were variously changed, and the change in the resistance value of the lower terminal layer was determined. R
s is the sheet resistance of the terminal layer. Rs = 15Ω / □, M
The length of Rh was 0.15 μm. Here, the shape coefficient k = w / MR-h. Therefore, the resistance on one side of the lower terminal layer is represented by r, and the total increases by 2r.

When w = MR-h, that is, when k = 1, it is expressed by the following equation. r = Rs ・ I / MR-h When w is larger than MR-h, that is, when k> 1, it is expressed by the following equation. r = Rs · I · In (k) / ((k−1) · MR-h) (2) The results are shown in FIGS. 16 and 17.

From the results shown in FIG. 16, it is possible to reduce the resistance value of the large lower terminal layer only by setting the shape factor k at least twice, that is, w at least twice MR-h. Preferably, the shape factor k is 5 times or more, ie, w
Is 5 times or more than MR-h, it is possible to suppress the resistance value to half or less as compared with the case where the shape factor is k = 1. Furthermore, the shape factor k is 10 times or more,
That is, by setting w to be at least 10 times as large as MR-h, the resistance value is 4 times smaller than when the shape coefficient is k = 1.
It can be reduced to about one-half. It was also found that when the shape factor k was sufficiently large, for example, 500, the rate of decrease in the resistance value tended to be constant.

In the conventional magnetic sensing element, the end of the lower terminal layer joined to the magnetoresistive element is cut off by ion milling or the like, and the length of the magnetoresistive element in the height direction is reduced as in this embodiment. In this state, there was only a length in the height direction at the end of the lower terminal layer (state in which the shape factor k = 1). It is considered that the current flowing to the conventional magnetic sensing element is in a state where the resistance value is increased because the end of the lower terminal layer is cut off.

On the other hand, in the magnetic sensing element of the present invention, a protective layer is formed on the lower terminal layer and at least partially on the inner side in the track width direction. Since the upper terminal layer is formed over the terminal layer, the length of the inner end in the track width direction of the lower terminal layer adjacent to the magnetoresistive element can be increased. Therefore, the current to the magnetoresistive element can pass through the end which is the shortest distance, so that the resistance value of the lower terminal layer can be reduced, and the output of the magnetoresistive element can be improved. Becomes possible.

[0061]

As described above, according to the magnetic sensing element of the present invention, at least two layers of a pair of conductive terminal layers formed at both sides of the magnetoresistive effect element at intervals in the track width direction. The distance between the pair of conductive terminal layers in the track width direction with respect to the upper terminal layer is set to be larger than the distance between the lower terminal layers in the track width direction. In addition, the insulation with the upper shield layer can be improved.

Further, in the present invention, a protective layer is formed on the terminal layer of the lower terminal layer, at least in a part of the inner side in the track width direction, and the upper layer extends from the protective layer to the lower terminal layer. By forming the terminal layer,
Since the current to the magnetoresistive element can pass through the edge of the lower terminal layer, which is the shortest distance, it is possible to reduce the resistance value of the lower terminal layer and, consequently, improve the output of the magnetoresistive element. It is possible to do.

Further, since the protective layer is formed in the height direction from the medium facing surface and covers the lower terminal layer, the end of the lower terminal layer adjacent to the magnetoresistive element in the track width direction is provided. The length of the part can be increased.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a structure of a magnetic sensing element according to an embodiment of the present invention as viewed from a medium facing surface.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is an enlarged cross-sectional view showing a relationship between a magnetoresistive element, two upper and lower terminal layers, and a protective layer.

FIG. 4 is a cross-sectional view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps.

5A is a sectional view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 5B is a sectional view seen from the medium facing surface.

FIG. 6 is a cross-sectional view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps.

7A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 7B is a cross-sectional view seen from the medium facing surface.

8A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 8B is a cross-sectional view seen from the medium facing surface.

9A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 9B is a cross-sectional view seen from the medium facing surface.

10A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 10B is a cross-sectional view seen from the medium facing surface.

11A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 11B is a cross-sectional view seen from the medium facing surface.

12A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 12B is a cross-sectional view seen from the medium facing surface.

13A is a plan view showing a method of manufacturing the magnetic sensing element according to the embodiment shown in FIG. 1 in the order of steps, and FIG. 13B is a cross-sectional view seen from the medium facing surface.

FIG. 14 is a sectional view illustrating a method of manufacturing the magnetic sensing element according to the embodiment illustrated in FIG. 1 in the order of steps;

FIG. 15 is an explanatory diagram showing elements of each unit in an experiment for confirming the effect of the present invention.

FIG. 16 is a correlation diagram between a shape of a terminal layer and a DC resistance value.

FIG. 17 is a diagram showing various dimensions for verifying a change in resistance value of a terminal layer.

FIG. 18 is a cross-sectional view of a conventional magnetic sensing element viewed from a medium facing surface side.

19 is an explanatory diagram showing a problem in the magnetic detection element shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Magnetic detection element 2 Magnetoresistive element 12 Substrate 14 Lower shield layer 15 Lower gap layer 20 Resistance layer of magnetoresistive element 32 Bias underlayer (lower conductive terminal layer) 33 Bias layer (lower conductive terminal layer) 34 terminal layer (lower conductive terminal layer) 35 terminal layer (upper conductive terminal layer) 36a protective layer 37 upper gap layer Tw track width

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 43/12 G01R 33/06 LF Term (Reference) 2G017 AC01 AC09 AD55 AD56 AD65 5D034 BA03 BA04 BA05 BA08 BA12 BA17 BB08 CA04 CA08 DA07 5E049 AA01 AA04 AA07 AA09 AC00 AC05 BA12 CB02 DB12 FC01 GC01

Claims (12)

[Claims] A first shield layer, a magnetoresistive element formed on the lower gap layer, an upper gap layer formed on the magnetoresistive element, and a lower shield layer formed on the upper gap layer. An upper shield layer to be formed, and at least two layers of a pair of conductive terminal layers formed at intervals in the track width direction on both sides of the magnetoresistive effect element. The distance between the pair of conductive terminal layers in the track width direction is set to be wider than the distance in the track width direction between the lower terminal layers, and at least part of the inner side in the track width direction on the lower terminal layers. A magnetic sensing element, wherein a protective layer is formed, and the upper terminal layer is formed from above the protective layer to the lower terminal layer. 2. The magnetic sensing element according to claim 1, wherein the protective layer is formed in a height direction from the medium facing surface and covers a lower terminal layer. 3. A lower shield layer on a substrate; a magnetoresistive element formed on the lower gap layer; an upper gap layer formed on the magnetoresistive element; An upper shield layer to be formed, at least two layers of a pair of conductive terminal layers formed at intervals in the track width direction in both side regions of the magnetoresistive effect element. The distance between the pair of conductive terminal layers in the track width direction is set wider than the distance between the lower terminal layers in the track width direction, and the upper terminal layer is the lower terminal layer immediately below the inner side in the track width direction. A magnetic sensing element, wherein the upper terminal layer is laminated so as to protrude inward in the track width direction from an end of a surface joined to the magnetic sensing element. 4. A lower shield layer on a substrate; a magnetoresistive element formed on the lower gap layer; an upper gap layer formed on the magnetoresistive element; An upper shield layer to be formed, at least two layers of a pair of conductive terminal layers formed at intervals in the track width direction in both side regions of the magnetoresistive effect element. The distance in the track width direction between the pair of conductive terminal layers in the track width direction is set wider than the distance in the track width direction of the lower terminal layer.
A first inclined surface facing the upper surface of the lower terminal layer and having an angle θ1 with respect to the upper surface of the lower terminal layer, and provided above the first inclined surface refracted from the first inclined surface. A second inclined surface having an angle θ2 with respect to the upper surface of the lower terminal layer, wherein the angle θ1 <the angle θ2. 5. The magnetic sensing element according to claim 1, wherein said conductive terminal layer includes a bias layer for applying a bias magnetic field to said magnetoresistive element. Magnetic sensing element. 6. The magnetic sensing element according to claim 1, wherein the magnetization direction of the magnetoresistive element is fixed by an exchange coupling magnetic field between at least an antiferromagnetic layer and the antiferromagnetic layer. A magnetic sensing element comprising a fixed magnetic layer, a nonmagnetic layer, and a free magnetic layer whose magnetization varies with an external magnetic field. 7. The magnetic sensing element according to claim 6, wherein a pair of conductive terminal layers formed at both sides of the magnetoresistive effect element at intervals in a track width direction have a magnetization direction of the free magnetic layer. A magnetic layer, comprising a bias layer for aligning the magnetic field in a certain direction. 8. The magnetic sensing element according to claim 1, wherein said conductive terminal layer is formed by laminating a plurality of conductive layers. . 9. The magneto-resistive element according to claim 1, wherein an end of a lower terminal layer joined to an end of the magneto-resistive element and extending in a height direction has a length equal to the height of the magneto-resistive element. A magnetic detection element, wherein the length is set to at least twice the length in the direction. 10. A magnetic head comprising the magnetic detecting element according to claim 1. (A) forming at least a lower shield layer, a lower gap layer, and a magnetoresistive element layer on a substrate; and (b) defining both side regions of the magnetoresistive element layer in a track width direction. (C) forming a pair of first conductive terminal layers in both end regions of the magnetoresistive element at predetermined intervals in the track width direction; and (d) forming the first conductive terminal layers. Forming a protective layer on at least the inner end of the conductive terminal layer in the track width direction; and (e) forming a pair of second conductive terminals from the protective layer to the first conductive terminal layer. Forming a layer; (f) forming an upper gap layer on at least the magnetoresistive element and the second conductive terminal layer; and (g) an upper shield layer provided on the upper gap layer. And forming The method for manufacturing a magnetic sensing element, which comprises a. 12. The method for manufacturing a magnetic sensing element according to claim 11, wherein in the step (d), the thickness of the protective layer is such that the thickness of the protective layer> the thickness of the magnetoresistive effect element × (magnetic (Milling rate of resistance effect element / Milling rate of protective layer).