JP2002359416A - Magnetic detection element and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that, related to a conventional CPP type magnetic detection element, a regenerative output is not properly improved while regenerative waveform is not stabilized properly, when the size of element becomes smaller. SOLUTION: A specular film 31 is formed on both side ends of a multilayered film 30. A hard bias layer 29 is formed on the surface of a free magnetic layer 26, which is located opposite to a surface, where a non-magnetic material layer 25 is formed. Thus, a magnetic detection element of high regenerative output and sensitivity and superior in stability of a regenerative waveform is manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a CPP (current
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a perpendicular to the plane type magnetic sensing element, and more particularly to a magnetic sensing element capable of improving the rate of change of resistance and having excellent reproduction sensitivity even in a case where the element size is reduced, and a manufacturing method thereof.

[0002]

2. Description of the Related Art FIG. 26 is a partial sectional view of the structure of a conventional magnetic sensing element viewed from a surface facing a recording medium.

[0005] Reference numeral 1 shown in FIG. 26 is a base layer such as Ta, on which an antiferromagnetic layer 2 such as PtMn is formed. Further, a fixed magnetic layer 3 made of NiFe or the like is formed on the antiferromagnetic layer 2, and a nonmagnetic material layer 4 made of Cu or the like is formed on the fixed magnetic layer 3. On the nonmagnetic material layer 4, a free magnetic layer 5 made of NiFe or the like is formed. On the free magnetic layer 5, a protective layer 6 of Ta or the like is formed. A multilayer film 9 is composed of the underlayer 1 to the protective layer 6.

The magnetization of the fixed magnetic layer 3 is fixed in the Y direction in the figure by an exchange coupling magnetic field generated between the fixed magnetic layer 3 and the antiferromagnetic layer 2.

The magnetization of the free magnetic layer 5 is aligned in the X direction in the drawing by the vertical bias magnetic fields from the hard bias layers 7 formed on both sides of the free magnetic layer 5 in the track width direction (X direction in the drawing). Can be

As shown in FIG. 26, electrode layers 8 are formed on the hard bias layers 7.

The direction of the flow of the sense current of the magnetic sensing element shown in FIG. 26 is a so-called CIP (current in the plane) type, which flows in a direction substantially parallel to each film surface of the multilayer film 9. The figure is shown in FIG.

As shown in FIG. 27, the track width determined by the width of the upper surface of the free magnetic layer of the multilayer film of the magnetic sensing element is denoted by Tw, the film thickness of the multilayer film is T, and the track width of the multilayer film is T. The length in the height direction is MRh.

Here, for example, the current density (J = I / (MRh)
× T)), the film thickness T is constant, and the track width Tw and the height length MRh are reduced to 1 / S, the resistance value R of the multilayer film is constant, and the resistance change ΔR is also constant. It is. The sense current I is 1 / S times. Therefore, the output ΔV (= ΔR × I) is reduced by a factor of 1 / S.

On the other hand, assuming that the track width Tw and the height length MRh are reduced to 1 / S while the heat generation amount (P) is constant, the resistance value R of the multilayer film 9 is constant, and the resistance change amount ΔR Is constant, and the sense current I is also constant, so that the output ΔV has a constant value.

On the other hand, a CPP (current perpendicular) in which a sense current flows in a direction perpendicular to each film surface of the multilayer film 9.
In the case of a (to the plane) type magnetic sensing element, the output (ΔV) changes as follows.

FIG. 28 is a schematic view of a CPP type magnetic sensing element. Similarly to FIG. 27, the track width determined by the width of the upper surface of the free magnetic layer of the multilayer film of the magnetic sensing element is Tw.
The thickness of the multilayer film is T, and the length of the multilayer film in the height direction is MRh.

Here, as in the case of the CIP type described above,
The current density (J = I / (Tw × MRh)) and the film thickness T are fixed, and the track width Tw and the height length MRh are set to 1 / S
If the size is reduced by a factor of ^two , the resistance value R of the multilayer film becomes S ² times, and therefore the resistance change ΔR also becomes S ² times. The sense current I is 1 / S ² times. Therefore, the output ΔV
(= ΔR × I) is constant.

On the other hand, assuming that the track width Tw and the height length MRh are reduced to 1 / S times while the heat generation amount (P) is constant, the resistance value R of the multilayer film becomes S ² times, and thus the resistance change amount. ΔR is also ^doubled S. The sense current I is 1 /
Since it becomes S times, the output ΔV becomes S times larger.

As the element size is reduced in this manner, the output can be increased by using the CPP type rather than the CIP type, and the CPP type can be appropriately used to reduce the element size due to the future increase in recording density. The structure was expected to be compatible.

[0016]

However, the track width Tw and the length MRh of the magnetic sensing element in the height direction are not limited.
As the device size becomes smaller and the element size becomes narrower, the following problems occur.

FIG. 29 is a schematic view showing a film structure in a multilayer film portion of a CPP type magnetic sensing element.

Giant magnetoresistance GMR in magnetic sensing element
The effect is mainly due to "spin-dependent scattering" of electrons. That is, the mean free path λ + of conduction electrons having spin electrons (for example, up-spin electrons) parallel to the magnetization direction of the magnetic material, here, the free magnetic layer, and conduction having spins (for example, down-spin electrons) opposite to the magnetization direction. It utilizes the difference in the mean free path λ- of electrons. In FIG. 29, conduction electrons having up spin electrons are indicated by upward arrows, and conduction electrons having down spin electrons are indicated by downward arrows.

When an electron tries to pass through the free magnetic layer, the electron can move freely if it has an up-spin electron parallel to the magnetization direction of the free magnetic layer. It will be scattered.

This is because the mean free path λ + of conduction electrons having up-spin electrons is sufficiently larger than the mean free path λ− of conduction electrons having down-spin electrons. The thickness of the free magnetic layer is set to be larger than the mean free path λ− of conduction electrons having down spin electrons and smaller than the mean free path λ + of conduction electrons having up spin electrons.

Therefore, when electrons try to pass through the free magnetic layer, they can move freely if they have up-spin electrons parallel to the magnetization direction of the free magnetic layer.
Conversely, when it has a down spin electron, it is immediately scattered (filtered out).

However, when the track width Tw and the length MRh in the height direction (see FIG. 28) are reduced, and particularly when the element area is reduced to 60 nm square or less, the upspin which can freely pass through the free magnetic layer is used. Before the electron passes through the free magnetic layer, the electrons collide with the both end surfaces of the multilayer film and are scattered.

Therefore, the mean free path λ + of the up-spin electrons is shortened, and the difference between the mean free path λ + of the conduction electrons having the up-spin electrons and the mean free path λ− of the conduction electrons having the down-spin electrons is small. turn into. This resulted in a decrease in the rate of resistance change (ΔR / R).

In order to solve the above problem,
For example, a structure as shown in FIG. 30 (a partial cross-sectional view of a part of the CPP type magnetic sensing element as viewed from the side facing the recording medium) was considered.

In FIG. 30, the width T1 of the free magnetic layer 15 in the track width direction is elongated, and similarly, the length MRh in the height direction is elongated to increase the optical element area. The insulating layers 16 are formed on the magnetic layer 15 at predetermined intervals. The electrode layer 1 extends from the insulating layer 16 to the free magnetic layer 15 to form a CPP type.
7 is formed.

In FIG. 30, in the free magnetic layer 15, a sense current flows only in a portion opposed to a predetermined space formed in the insulating layer 16 (indicated by an arrow). Even if the width Tw becomes large and the optical element area is large, the effective element area involved in the magnetoresistance effect can be reduced, so that the reproduction output can be improved and the optical element area can be expanded. The up-spin electrons are less likely to collide with both end surfaces of the multilayer film and are appropriately prevented from being diffused. Therefore, the mean free path λ + of the conduction electrons having the up-spin electrons can be increased, and the resistance change rate (ΔR / It was thought that R) could be improved.

In the structure shown in FIG. 30, however, it is difficult for the sense current to flow to the end 15a of the free magnetic layer 15 located below the insulating layer 16, but the sense current does not easily flow.
Since the magnetization of 5a fluctuates under the influence of an external magnetic field, the fluctuation of the magnetization also propagates to the magnetization of the central portion 15b of the free magnetic layer 15 involved in the magnetoresistance effect, and Since the magnetization fluctuates, an effective track width (also referred to as a magnetic track width Mag-Tw) is widened, which causes a problem that stability of a reproduced waveform is reduced.

FIG. 31 shows the structure of a conventional CPP type magnetic sensing element (partial sectional view as seen from the side facing the recording medium). A multilayer film 11 composed of an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic material layer 4, and a free magnetic layer 5 is formed, and an insulating layer 1 is provided on both sides in the track width direction (X direction in the drawing).
6, a hard bias layer 7, and an insulating layer 12 are sequentially laminated, and a second electrode layer 13 is formed from the insulating layer 12 to the free magnetic layer 5.

The CPP type magnetic sensing element shown in FIG.
As in the case of the CIP type magnetic sensing element shown in FIG. 26, hard bias layers 7 are arranged on both sides of the free magnetic layer 5 in the track width direction, and a vertical bias magnetic field from the hard bias layer 7 is applied to the free magnetic layer. 5, the magnetization of the free magnetic layer 5 is directed in the X direction in the figure.

However, when the track width Tw becomes very small, the longitudinal bias magnetic field applied to the free magnetic layer 5 from the hard bias layer 7 becomes very strong, so that the magnetization of the entire free magnetic layer 5 becomes external. It becomes difficult to change with good sensitivity to a magnetic field, and there has been a problem of a decrease in reproduction sensitivity and a decrease in reproduction output.

Further, in the conventional example shown in FIG. 31, a bias underlayer 18 made of Cr or the like is formed from the insulating layer 16 to both end surfaces of the multilayer film 11, thereby forming the characteristics (coercive force) of the hard bias layer 7. Hc and squareness ratio S)
However, since the bias underlayer 18 intervenes between the hard bias layer 7 and the free magnetic layer 5, the free magnetic layer 5 and the hard bias layer 7 do not form a magnetic continuum. For this reason, the magnetization of the both end portions 5a in the track width direction (X direction in the drawing) of the free magnetic layer 5 is disturbed by the influence of the demagnetizing field, and a magnetization discontinuity phenomenon, that is, a so-called buckling phenomenon occurs. all right.

Due to the buckling phenomenon described above, the free magnetic layer 5 could not be made into a single magnetic domain, and there was a problem in that the stability of the reproduced waveform and the reproduced output were lowered.

Therefore, the present invention has been made to solve the above-mentioned conventional problems, and in particular, it is possible to improve the stability of the reproduction waveform and the resistance change rate even when the element size is reduced. It is intended to provide a detection element.

Another object of the present invention is to provide a method of manufacturing a magnetic sensing element which can easily form specular films having a specular reflection effect on both sides of a multilayer film even when the element size is reduced. I have.

[0035]

The present invention provides an antiferromagnetic layer,
In a magnetic sensing element provided with a multilayer film having a fixed magnetic layer, a nonmagnetic material layer, and a free magnetic layer, and a current flows in a direction perpendicular to a film surface of each layer of the multilayer film, the nonmagnetic material layer of the free magnetic layer On the side opposite to the side where
A bias layer is provided via a non-magnetic intermediate layer, and a specular film is provided at least on both end surfaces in the track width direction of each layer from the fixed magnetic layer to the free magnetic layer. is there.

In the present invention, a specular film, that is, a specular reflection film is provided on both end surfaces in the track width direction of each layer from the pinned magnetic layer to the free magnetic layer as described above.

The specular film may be provided not only from the pinned magnetic layer to the free magnetic layer but also on both side end faces in the track width direction of each layer from the antiferromagnetic layer to the bias layer.

Here, the specular film (specular reflection film)
Will be described with reference to FIG. FIG. 7 schematically shows a part of the structure of the magnetic sensing element according to the present invention.

When the magnetization of the fixed magnetic layer and the magnetization of the free magnetic layer are parallel to each other, the up-spin electrons (indicated by upward arrows in FIG. 7) pass through the fixed magnetic layer and the nonmagnetic material layer, and It can move inside the free magnetic layer.

Here, as the track width Tw becomes narrower, especially when the element area becomes 60 nm square or less, a part of the up-spin electrons is transferred to both end faces of the multilayer film before passing through the inside of the free magnetic layer. In the present invention, since the specular films are provided on both end surfaces of the multilayer film, the up-spin electrons reaching both end surfaces of the multilayer film have spin states (energy, quantum state, etc.) there. Specularly reflected while maintaining Then, the conduction electrons of the specularly reflected up-spin electrons can pass through the free magnetic layer by changing the moving direction.

Therefore, in the present invention, even when the device area is reduced, the mean free path λ + of the conduction electrons having the up-spin electrons can be extended as compared with the conventional case, and therefore, the conduction electrons having the up-spin electrons can be extended. And the mean free path λ− of conduction electrons having down-spin electrons can be increased, so that the read output can be improved and the resistance change rate (ΔR / R) can be improved. Becomes possible.

The reason why the conduction electrons are specularly reflected by the formation of the specular film is that a potential barrier is formed near the interface between the specular film and the side wall of the free magnetic layer, the nonmagnetic material layer / the fixed magnetic layer. it is conceivable that.

In the present invention, the bias layer is provided on the surface of the free magnetic layer opposite to the surface on which the nonmagnetic material layer is formed via a nonmagnetic intermediate layer. Therefore, in the present invention, unlike the conventional example shown in FIG. 31, the hard bias layer 7 is not opposed to both sides of the free magnetic layer 5 in the track width direction, so that the free magnetic layer is strongly magnetized as in the conventional example. Therefore, there is no problem that the fluctuation of magnetization is deteriorated or that the buckling phenomenon prevents the single magnetic domain from being formed.

In the present invention, as described above, the bias layer is provided on the surface of the free magnetic layer opposite to the surface on which the nonmagnetic material layer is formed via the nonmagnetic intermediate layer. By the magnetostatic junction between the end and the end of the free magnetic layer, a longitudinal bias magnetic field from the bias layer is supplied to the free magnetic layer, and the magnetization of the free magnetic layer is aligned in the track width direction.

In the longitudinal bias supply means according to the present invention, it is possible to manufacture a magnetic sensing element which can appropriately make the magnetization of the free magnetic layer a single magnetic domain, make the fluctuation of the magnetization of the free magnetic layer good, and have excellent read sensitivity. Is possible.

In the present invention, it is preferable that both end faces of each layer from the antiferromagnetic layer to the bias layer are continuous faces. Thereby, the magnetostatic coupling between the bias layer and the free magnetic layer has an appropriate strength, and the magnetization of the free magnetic layer can be appropriately made into a single magnetic domain.

In the present invention, the specular film is
Fe-O, Ni-O, Co-O, Co-Fe-O, Co
-Fe-Ni-O, Al-O, Al-Q-O (where Q
Are B, Si, N, Ti, V, Cr, Mn, Fe, Co,
Ni or more), RO (where R is C
u, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta,
It is preferably formed of one or more oxides selected from W).

For example, among the Fe-O, α-Fe
₂ O _3, NiO among NiO, ALQO among Al-Q-O, it is preferable to satisfy the composition formula also becomes RO in RO.

Alternatively, in the present invention, the specular film is formed of Al—N, Al—QN (where Q is B, Si,
O, Ti, V, Cr, Mn, at least one selected from Fe, Co, Ni), RN (where R is Ti, V, C
It is preferably formed of a nitride of at least one selected from r, Zr, Nb, Mo, Hf, Ta, and W).

Among Al-N, AlN, Al-Q-
It is preferable to satisfy the composition formula of AlQN among N and RN among RN.

In the present invention, it is preferable that the specular film is formed by oxidizing or nitriding a metal element or a nonmetal element formed on both end surfaces in the track width direction of the multilayer film. The oxidation includes radical oxidation,
Ion oxidation, plasma oxidation, natural oxidation, CVD, or the like can be selected.

Further, according to the present invention, the specular film comprises:
The multilayer film may be formed by depositing the oxide or nitride directly on both end surfaces in the track width direction.

Alternatively, in the present invention, the specular film is formed of an insulator attached to both end surfaces of the multilayer film when the insulating layers provided on both sides of the multilayer film in the track width direction are milled. The insulator may be formed by oxidation or nitridation.

Alternatively, in the present invention, an insulating layer is provided on both sides of the multilayer film in the track width direction, and the specular film is formed from the insulating layer to both end surfaces in the track width direction of the multilayer film. Is preferred.

Further, in the present invention, the specular film may be formed by oxidizing or nitriding both end faces in the track width direction of the magnetic sensing element.

Alternatively, it is preferable that the specular film is formed of a semi-metallic Whistler alloy.

In the present invention, the non-magnetic intermediate layer is preferably formed of a non-magnetic conductive material. Specifically, the nonmagnetic intermediate layer is made of Ru, Rh, Ir, Cr, Re, C
Preferably, u is formed of one or more alloys.

In the present invention, it is preferable that an insulating layer is formed on both sides of the specular layer in the track width direction.

The method for manufacturing a magnetic sensing element according to the present invention is characterized by including the following steps. (A) forming a first electrode layer on a substrate;
Forming a multi-layered film from the bottom in the order of an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, a free magnetic layer, a non-magnetic intermediate layer, and a bias layer on the electrode layer; Forming a resist layer thereon and removing the multilayer film not covered by the resist layer; and (c) a specular film extending from the first electrode layer to both end surfaces in the track width direction of the multilayer film. Forming (d)
Forming an insulating layer on the specular film and removing the resist layer; and (e) forming a second electrode layer from the insulating layer to the bias layer.

According to the above-described manufacturing method, a bias layer can be formed on the free magnetic layer via the non-magnetic intermediate layer, and the non-magnetic intermediate layer is formed as a surface continuous with both end surfaces in the track width direction of the free magnetic layer. Both end faces of the layer and the bias layer can be formed.

According to the above-described manufacturing method, a specular film can be formed appropriately and easily from the first electrode layer to both end surfaces in the track width direction of the multilayer film.

In the present invention, the steps (b) and (c)
It is preferable to have the following steps between the steps. (F) a step of cutting both sides of the multilayer film in the track width direction by ion milling.

By the above-mentioned step (f), it is possible to appropriately remove the deposits adhering to both side end faces of the multilayer film at the time of the removing operation in the step (b). Since the specular film can be provided on the end face, it is possible to appropriately bring out the specular reflection effect in the specular film.

In the present invention, it is preferable that the ion milling angle is inclined by 20 ° to 70 ° with respect to the vertical direction of the upper surface of the substrate.

In the present invention, it is preferable to include the following steps between the steps (d) and (e). (G) a step of scrub cleaning the insulating layer from above the bias layer;

Thus, in the step (g), it is possible to cleanly process the insulating layer from the insulating layer to the bias layer. In particular, in the manufacturing method according to the present invention, after the step (d), the tip of the specular film may protrude from the upper surface of the bias layer and burrs may be generated, and it is necessary to appropriately remove the burrs. is there. In the present invention, the burr can be appropriately removed by the scrub cleaning in the step (g).

In the present invention, the specular film is
Fe-O, Ni-O, Co-O, Co-Fe-O, Co
-Fe-Ni-O, Al-O, Al-Q-O (where Q
Are B, Si, N, Ti, V, Cr, Mn, Fe, Co,
Ni or more), RO (where R is C
u, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta,
It is preferable to use an oxide of at least one selected from W).

It is to be noted that, for example, α-Fe
₂ O _3, NiO among NiO, ALQO among Al-Q-O, it is preferable to satisfy the composition formula also becomes RO in RO.

In the present invention, it is preferable that after forming a metal element or a non-metal element on both sides of the multilayer film in the track width direction, the metal element or the non-metal element is oxidized to form the specular film. . In the present invention, it is preferable that the specular film is oxidized by one or more oxidation methods of radical oxidation, ion oxidation, plasma oxidation and natural oxidation.

Alternatively, in the present invention, the specular film is formed of Al—N, Al—QN (where Q is B, Si,
O, Ti, V, Cr, Mn, at least one selected from Fe, Co, Ni), RN (where R is Ti, V, C
It is preferable to use a nitride of at least one selected from r, Zr, Nb, Mo, Hf, Ta, and W).

Among Al-N, AlN, Al-Q-
It is preferable to satisfy the composition formula of AlQN among N and RN among RN.

In the present invention, it is preferable that after forming a metal element or a non-metal element on both sides of the multilayer film in the track width direction, the metal element or the non-metal element is nitrided to form the specular film. .

Alternatively, in the present invention, the specular film may be formed by depositing the oxide or nitride directly on both sides of the multilayer film in the track width direction.

In the present invention, in the step (c), the specular film or the metal element or the nonmetal element is formed by sputtering at an irradiation angle of 20 ° to 70 ° with respect to the vertical direction of the upper surface of the substrate. Is preferred.

Alternatively, in the present invention, before the step (c), there is a step of providing an insulating layer on both sides of the multilayer film in the track width direction. In the step (c), the insulating layer is milled. Thus, the specular film may be formed by attaching the insulating layer to both end surfaces of the multilayer film, or oxidizing or nitriding the attached insulating layer.

Alternatively, in the present invention, prior to the step (c), there is a step of providing an insulating layer on both sides of the multilayer film in the track width direction. In the step (c), the insulating layer is formed from above the insulating layer. The specular film may be formed on both end surfaces in the track width direction of the multilayer film.

Further, in the present invention, in the step (c),
A specular film may be formed by oxidizing or nitriding both end surfaces in the track width direction of the multilayer film.

Alternatively, in the present invention, it is preferable that the specular film is formed of a semi-metallic Whistler alloy.

In the present invention, it is preferable that the non-magnetic intermediate layer is made of a non-magnetic conductive material. Specifically, the non-magnetic intermediate layer is formed of Ru, Rh, Ir, Cr, Re, Cu
Of these, it is preferable to form one or two or more alloys.

In the present invention, in the step (a), after forming a first electrode layer on the substrate, a bias layer, a non-magnetic intermediate layer, a free magnetic layer, A multilayer film may be formed in the order of the nonmagnetic material layer, the pinned magnetic layer, and the antiferromagnetic layer.

[0081]

FIG. 1 is a partial cross-sectional view of the entire structure of a magnetic sensing element (single spin valve type magnetoresistive element) according to a first embodiment of the present invention, as viewed from a surface facing a recording medium. . In FIG. 1, only the central portion of the element extending in the X direction is shown broken.

A shield layer (not shown, the electrode also serves as a shield layer) is provided above and below the magnetic sensing element shown in FIG. 1 via a gap layer (not shown, the electrode layer may also serve as the gap layer). The magnetic sensing element, the gap layer and the shield layer are collectively called an MR head. The MR head is for reproducing an external signal recorded on a recording medium.
In the present invention, a recording inductive head may be stacked on the MR head. A shield layer (upper shield layer) formed above the magnetic sensing element
May also be used as a lower core layer of the inductive head.

The MR head is made of, for example, alumina
Is formed on the trailing end surface of a slider is formed of titanium carbide (Al ₂ O ₃ -TiC). The slider is joined to an elastically deformable support member made of stainless steel or the like on the surface opposite to the surface facing the recording medium to constitute a magnetic head device.

Reference numeral 20 shown in FIG. 1 is a first electrode layer. The first electrode layer 20 includes, for example, α-Ta, Au,
It is formed of Cr, Cu (copper), W (tungsten), or the like.

An underlayer 21 is formed on the central upper surface of the first electrode layer 20. The underlayer 21 is made of Ta, H
Preferably, it is formed of at least one of f, Nb, Zr, Ti, Mo, and W. The underlayer 21 is 5
It is formed with a thickness of about 0 ° or less. The underlayer 21
May not be formed.

Next, a seed layer 22 is formed on the underlayer 21. The seed layer 22 is made of, for example, a face-centered cubic crystal, and a (111) plane is preferentially oriented in a direction parallel to an interface with the antiferromagnetic layer 23 described below.
The seed layer 22 is made of NiFe alloy or N
i-Fe-Y alloy (where Y is Cr, Rh, Ta, H
f, Nb, Zr, and Ti). Since the seed layer layer 22 formed of these materials is formed on the underlayer 21 formed of Ta or the like, the (111) plane is easily oriented preferentially in a direction parallel to the interface with the antiferromagnetic layer 23. Become.
Alternatively, the seed layer 22 is formed of Cr. In such a case, the seed layer 22 is formed of amorphous, body-centered cubic, or a mixed phase thereof. The seed layer 22 is formed, for example, at about 30 °.

Since the magnetic sensing element of the present invention is of the CPP type in which a sense current flows in a direction perpendicular to the film surface of each layer, it is necessary that a sense current appropriately flows through the seed layer 22. Therefore, it is preferable that the seed layer 22 is not made of a material having a high specific resistance. That is, in the case of the CPP type, the seed layer 22 is preferably formed of a material having a low specific resistance such as a NiFe alloy. Note that the seed layer 22 may not be formed.

Next, an antiferromagnetic layer 23 is formed on the seed layer 22. The antiferromagnetic layer 23 is made of an element X
(However, X is one or more elements of Pt, Pd, Ir, Rh, Ru, and Os) and is preferably formed of an antiferromagnetic material containing Mn. Alternatively, the antiferromagnetic layer 23 is composed of an element X and an element X ′ (provided that the element X ′ is Ne, Ar, Kr, Xe, Be, B, C,
N, Mg, Al, Si, P, Ti, V, Cr, Fe, C
o, Ni, Cu, Zn, Ga, Ge, Zr, Nb, M
o, Ag, Cd, Sn, Hf, Ta, W, Re, Au,
Pb and one or more of the rare earth elements) and Mn-containing antiferromagnetic material.

These antiferromagnetic materials are excellent in corrosion resistance and high in the blocking temperature.
4 can generate a large exchange anisotropic magnetic field at the interface. Further, it is preferable that the antiferromagnetic layer 23 is formed to have a thickness of 80 ° or more and 250 ° or less.

Next, a fixed magnetic layer 24 is formed on the antiferromagnetic layer 23. In this embodiment, the fixed magnetic layer 24 has a three-layer structure.

The layers denoted by reference numerals 51 and 53 constituting the fixed magnetic layer 24 are magnetic layers, for example, Co, CoFe, N
It is formed of iFe, CoFeNi, or the like. The magnetic layer 5
A non-magnetic intermediate layer 52 made of Ru or the like is provided between
With this configuration, the magnetization directions of the magnetic layer 51 and the magnetic layer 53 are antiparallel to each other. This is called an artificial ferri-state.

The antiferromagnetic layer 23 and the fixed magnetic layer 24
An exchange anisotropic magnetic field is generated between the magnetic layers 51 in contact with the antiferromagnetic layer 23 by heat treatment in a magnetic field. For example, when the magnetization of the magnetic layer 51 is fixed in the height direction (Y direction in the drawing), One magnetic layer 53 is magnetized and fixed in a direction opposite to the height direction (opposite to the Y direction in the drawing) by the RKKY interaction. With this configuration, the magnetization of the fixed magnetic layer 24 can be stabilized, and the exchange anisotropic magnetic field generated at the interface between the fixed magnetic layer 24 and the antiferromagnetic layer 23 can be apparently increased.

For example, each of the magnetic layers 51 and 53 is formed to have a thickness of about 10 to 70 °. The non-magnetic intermediate layer 52 is formed with a thickness of about 3 ° to 10 °.

The magnetic layers 51 and 53 have different materials and thicknesses so that the magnetic moments per unit area are different. The magnetic moment per unit area is set by saturation magnetization Ms × film thickness t. For example, when the magnetic layers 51 and 53 are formed of the same material and the same composition,
By making the film thicknesses of the magnetic layers 51 and 53 different,
53 can have different magnetic moments. This makes it possible to appropriately form the magnetic layers 51 and 53 into an artificial ferrimagnetic structure.

In the present invention, the fixed magnetic layer 24 may be formed of a single-layer film or a laminated film of a NiFe alloy, a NiFeCo alloy, or a CoFe alloy instead of the ferrimagnetic structure.

On the fixed magnetic layer 24, a non-magnetic material layer 25 is formed. The non-magnetic material layer 25 is formed of a conductive material having a low electric resistance, such as Cu. The nonmagnetic material layer 25 is formed, for example, with a thickness of about 25 °.

Next, a free magnetic layer 26 is formed on the non-magnetic material layer 25. Preferably, the free magnetic layer 26 has a two-layer structure, and a Co film 54 is formed on the side facing the nonmagnetic material layer 25. Thereby, diffusion of a metal element or the like at the interface with the nonmagnetic material layer 25 can be prevented, and the resistance change rate (ΔGMR) can be increased. A NiFe alloy,
It is preferable to form the magnetic material layer 55 made of a CoFe alloy, Co, CoNiFe alloy, or the like. It is preferable that the entire thickness of the free magnetic layer 26 is not less than 20 ° and not more than 100 °.

The free magnetic layer 26 may be formed in a one-layer structure using any of the above magnetic materials.

On the free magnetic layer 26, a non-magnetic intermediate layer 27 is formed. The non-magnetic intermediate layer 27 is preferably formed of a non-magnetic conductive material. The non-magnetic conductive material includes Ru, Rh, Ir, Cr, Re, C
One or more alloys can be selected from u. The thickness of the nonmagnetic intermediate layer 27 is 20 to 20.
It is preferably 0 °.

The non-magnetic intermediate layer 27 may be formed of an insulating material such as Al ₂ O ₃ or SiO _2, but in the case of a CPP type magnetic sensing element as in the present invention, Since the sense current must also flow inside the magnetic intermediate layer 27 in the direction perpendicular to the film surface, when the nonmagnetic intermediate layer 27 is an insulator, the nonmagnetic intermediate layer 2
It is necessary to reduce the withstand voltage by forming the thin film 7 to a thickness of 50 °. The non-magnetic intermediate layer 27 is made of Al ₂ O ₃
When forming a material having a specular reflection effects such or TaO ₂ may also function the non-magnetic intermediate layer 27 as a current blocking layer to reduce the specular layer and the effective element area.

Next, a hard bias layer 29 is formed on the nonmagnetic intermediate layer 27 with a bias underlayer 28 interposed therebetween.

The bias underlayer 28 is preferably formed of a metal film having a body-centered cubic structure (bcc structure). At this time, it is preferable that the crystal orientation of the bias underlayer 28 is preferentially oriented in the (100) plane.

The hard bias layer 29 is made of CoP
It is formed of a t alloy, a CoPtCr alloy, or the like. The crystal structure of these alloys is generally set in the bulk near a composition that is a mixed phase of a face-centered cubic structure (fcc) and a dense hexagonal structure (hcp).

Here, CoPt forming the bias underlayer 28 and the hard bias layer 29 formed of the above-described metal film is used.
Since the lattice constant of the hcp structure of the base alloy is close,
The CoPt-based alloy is difficult to form the fcc structure, and is easily formed with the hcp structure. At this time, the c-axis of the hcp structure is C
It is preferentially oriented in the interface between the oPt-based alloy and the bias underlayer. Since the hcp structure generates a larger magnetic anisotropy in the c-axis direction than the fcc structure, the coercive force Hc when a magnetic field is applied to the hard bias layer increases. Furthermore, since the c-axis of hcp is preferentially oriented within the boundary between the CoPt-based alloy and the bias underlayer, the residual magnetization increases, and the squareness ratio S obtained by residual magnetization / saturation magnetization increases. As a result, the characteristics of the hard bias layer 29 can be improved, and the bias magnetic field generated from the hard bias layer 29 can be increased.

In the present invention, the crystal structure is a body-centered cubic structure (b
(cc structure) metal film is composed of Cr, W, Mo, V, Mn, N
It is preferable to be formed of one or more of b and Ta. In the present invention, the bias underlayer 28 may not be formed. Further, the bias underlayer 28 can also serve as the nonmagnetic intermediate layer 27.

In the present invention, as shown in FIG. 1, a multilayer film 30 is composed of each layer from the base layer 21 formed on the first electrode layer 20 to the hard bias layer 29. Both end surfaces 30a are continuous inclined surfaces, and the multilayer film 30 is formed, for example, in a substantially trapezoidal shape.

Next, in the present invention, as shown in FIG. 1, both end surfaces 30a of the multilayer film 30 are formed on the first electrode layer 20 from above.
Specular films 31, 31 are formed on the upper side.

On the specular film 31, insulating layers 32, 32 are formed. The insulating layer 32 is formed of a general insulating material, for example, Al ₂ O ₃ or SiO ₂
And so on.

Next, as shown in FIG. 1, a second electrode layer 33 is formed from above the insulating layer 32 to above the hard bias layer 29. The second electrode layer 33 is formed of, for example, α-Ta, Au, Cr, C, like the first electrode layer 20.
It is formed of u (copper) or W (tungsten).
The second electrode layer 33 may also serve as an upper shield layer or an upper gap layer.

In this embodiment, for example, a sense current flows from the second electrode layer 33 to the first electrode layer 20 (or vice versa). Flows in a direction perpendicular to the film surface, and such a sense current flow direction is called a CPP type.

In this magnetic sensing element, the fixed magnetic layer 24,
When a detection current (sense current) is applied to the non-magnetic material layer 25 and the free magnetic layer 26, the traveling direction of a recording medium such as a hard disk is in the Z direction, and when a leakage magnetic field from the recording medium is applied in the Y direction, The magnetization of the magnetic layer 26 changes from one direction in the illustrated X direction to the Y direction. The fluctuation of the magnetization direction in the free magnetic layer 26 and the
The electric resistance changes in relation to the fixed magnetization direction of No. 4 (this is called a magnetoresistance effect), and a leakage magnetic field from the recording medium is detected by a voltage change based on the change in the electric resistance value.

In this embodiment, the multilayer film 3
0 end surfaces 3 in the track width direction (X direction in the figure)
A specular film 31 is formed on 0a and 30a.

The specular film 31 is also called a specular reflection layer, and as described with reference to FIG.
When the magnetization of the pinned magnetic layer 24 and the magnetization of the pinned magnetic layer 24 have a parallel relationship, for example, conduction electrons having up-spin electrons can pass through the free magnetic layer 26, but the width of the upper surface of the free magnetic layer 26 is Track width T to be determined
As w becomes smaller, the conduction electrons are more likely to collide with both end surfaces 30a of the multilayer film 30.

In the present invention, the conduction electrons are transferred to the multilayer film 3.
0, the specular films 31 are provided on both side surfaces 30a of the multilayer film 30 so as to specularly reflect the conduction electrons thereat, so that the conduction electrons are reflected on both side surfaces of the multilayer film 30. After arriving at 30a, the light is specularly reflected and can pass through the free magnetic layer 26.

Therefore, according to the present invention, the mean free path λ + of the conduction electrons having the up-spin electrons can be extended even when the element area is reduced, so that the reproduction output is improved and the resistance change rate (ΔR / R) is improved. It becomes possible to plan.

In the present invention, the track width Tw is preferably about 10 nm or more and 100 nm or less.
More preferably, it is preferably 60 nm or less. When the track width Tw is reduced to about the above numerical range, the reproduction output can be further improved, and the number of times that the conduction electrons having the up-spin electrons reach the both end surfaces 30a of the multilayer film 30 is improved. And the specular reflection effect of the specular film 31 can be made to function effectively, and the rate of change in resistance can be improved.

The specular film 31 does not need to be formed on the entire both side end surfaces of the multilayer film 30 as shown in FIG. 1, and at least in the track width direction of each layer from the fixed magnetic layer 24 to the free magnetic layer 26. The effects described above can be obtained if they are formed on both end surfaces.

Next, the material of the specular film 31 will be described below. The specular film 31 is made of Fe-
O, Ni-O, Co-O, Co-Fe-O, Co-Fe
-Ni-O, Al-O, Al-Q-O (where Q is B,
Si, N, Ti, V, Cr, Mn, one or more selected from Fe, Co, Ni), RO (where R is Cu, T
i, V, Cr, Zr, Nb, Mo, Hf, Ta, W).

For example, among Fe-O, α-Fe
₂ O _3, NiO among NiO, ALQO among Al-Q-O, it is preferable to satisfy the composition formula also becomes RO in RO.

For the formation of these oxides, for example, a target of a metal element or a non-metal element is prepared, and a film of a metal element or a non-metal element is formed on both side surfaces 30a of the multilayer film 30 by sputtering. Plasma oxidation, ion oxidation,
The film made of the metal element or the nonmetal element is oxidized by natural oxidation or the like. Unless all the films of the metal element and the non-metal element are oxidized, the specular film 31 having the specular reflection effect cannot be formed properly.

The specular film 31 formed by the above-described oxidation method preferably has a stoichiometric composition, but can exhibit a specular reflection effect even without the stoichiometric composition.

As described above, in the specular film 31 having a sufficient insulating property without having a stoichiometric composition, a potential barrier is appropriately formed near the interface with the free magnetic layer 26, and the specular reflection effect is obtained. Can be demonstrated.

For example, when the specular film 31 is formed of Al—O, if the specular film 31 is formed by sputtering with a target formed of Al ₂ O ₃ , the specular film 31 having a stoichiometric composition is formed. However, if the amount of oxygen is not extremely low, an appropriate potential barrier can be formed near the interface between the specular film 31 and the free magnetic layer 26, and the specular reflection effect can be effectively exhibited.

Alternatively, in the present invention, the specular film 31 is made of Al-N, Al-QN (where Q is B, S
i, O, Ti, V, Cr, Mn, at least one selected from Fe, Co, Ni), RN (where R is Ti, V,
(At least one selected from Cr, Zr, Nb, Mo, Hf, Ta, and W).

Among Al-N, AlN, Al-Q-
It is preferable to satisfy the composition formula of AlQN among N and RN among RN.

For forming these nitrides, for example, a target of a metal element or a non-metal element is prepared, and a film of the metal element or the non-metal element is formed by sputtering on both side surfaces 30 a of the multilayer film 30. A film made of an element or a nonmetallic element is nitrided.

Alternatively, in the present invention, the specular film 31 made of the oxide or nitride is formed by the following method.

That is, a target formed of the above-described oxide or nitride is prepared, and directly from this target,
The specular film 31 made of an oxide or a nitride may be formed by adhering to both side surfaces 30 a of the multilayer film 30. In such a case, the above-described oxidation step or nitridation step is not required, and the manufacturing process can be simplified. However, after directly forming the specular film 31 made of the oxide or the nitride, the specular film 31 is further oxidized. , May be nitrided. This can enhance the specular effect.

Alternatively, when the insulating layers provided on both sides of the multilayer film 30 in the track width direction (X direction in the drawing) are milled, the specular film 31
May be formed of an insulator adhered to both side end surfaces 30a, or may be formed by oxidizing or nitriding the insulator. Specifically, a structure as shown in FIG. 2 can be exemplified (second embodiment of the present invention).

In FIG. 2, an insulating layer 39 is formed on the first electrode layer 20 on both sides of the multilayer film 30 in the track width direction (X direction in the drawing). This insulating layer 39 is preferably formed of the above-described oxide or nitride. In such a case, the insulating material elements that fly by milling the insulating layer 39 are directly applied to both side surfaces 30 of the multilayer film 30.
a to make the adhered substance function as the specular film 31. Alternatively, the insulating material element may be attached to both sides of the multilayer film 30 and then oxidized or nitrided.

If the insulating layer 39 is not formed of an oxide or a nitride, the insulating layer 39 is milled to deposit an insulating material element on both sides of the multilayer film 30, and then the deposited material is removed. Is oxidized or nitrided to form the specular film 31.

Further, in the structure shown in FIG. 2, the specular film 31 is constituted only by the deposit from the insulating layer 39. However, the specular film 31 is further formed on the specular film 31 shown in FIG. If not, a specular film made of an oxide or a nitride may be formed on both end surfaces 30a of the multilayer film 30. One example is shown in FIG. 3 (third embodiment of the present invention).

In the embodiment shown in FIG. 3, the specular film 31 is formed not only on both end faces 30 a of the multilayer film 30 but also on the insulating layer 39. Further, the specular film 31 is also formed on the upper surface 20a of the first electrode layer 20 exposed between the insulating layer 39 and the multilayer film 30, and the space between the insulating layer 39 and the multilayer film 30 is filled with the specular film 31. It is in a state of being left.

In the embodiment shown in FIG. 3, a film made of a metallic element or a non-metallic element is formed on both sides 30a of the multilayer film 30 and on the insulating layer 39 in the same manner as described with reference to FIG. After that, the film is oxidized or nitrided, or a target formed of an oxide or a nitride is prepared, and the oxide or the nitride is directly deposited on both sides 30 a of the multilayer film 30 on the insulating layer 39. To form a specular film 31.

Alternatively, the specular film 31 may be formed as follows. In the present invention, the specular film 31 may be formed by directly oxidizing or nitriding both end surfaces 30a of the multilayer film 30 in the track width direction (X direction in the drawing).

The specular film 31 includes, in addition to the specular film 31 formed by oxidizing or nitriding both side surfaces 30a of the multilayer film 30, the multilayer film 30 as described later in the manufacturing method. When formed in a substantially trapezoidal shape as shown in FIG. 1, the metal elements constituting the multilayer film 30 may re-attach to both end surfaces 30a of the multilayer film 30, and the attached matter is oxidized or nitrided. The specular film 31 is also included.

Alternatively, in the present invention, the specular film may be formed of a semi-metallic Whistler alloy. NiMnSb, PtMnSb,
Etc. can be selected.

Next, the hard bias layer 29 formed on the free magnetic layer 26 shown in FIGS. 1 to 3 via the nonmagnetic intermediate layer 27 will be described below.

According to the present invention, as shown in FIGS.
Magnetostatic coupling occurs between the end of the hard bias layer 29 and the end of the free magnetic layer 26, and the longitudinal bias magnetic field from the hard bias layer 29 is supplied to the free magnetic layer 26 (in the direction of the arrow). ).

Thus, the magnetization of the free magnetic layer 26 is aligned in the track width direction (X direction in the figure).

In the present invention, by providing the hard bias layer 29 via the nonmagnetic intermediate layer 27 on the surface of the free magnetic layer 26 opposite to the surface on which the nonmagnetic material layer 25 is formed, When the hard bias layer is opposed to both sides in the track width direction of the hard bias layer 29 as described above, the buckling phenomenon caused by the interposition of the bias underlayer and the magnetization of the free magnetic layer 26 are firmly fixed and the magnetization reversal occurs. Can be eliminated, and according to the present invention,
It is possible to appropriately produce a single magnetic domain in the free magnetic layer 26, improve the magnetization reversal of the free magnetic layer 26 with respect to an external magnetic field, and manufacture a magnetic sensing element having good read sensitivity and excellent read waveform stability. It is possible.

In the magnetic sensing element shown in FIGS. 1 to 3, both end surfaces of the nonmagnetic intermediate layer 27 and the hard bias layer 29 are formed as continuous surfaces with both end surfaces in the track width direction of the free magnetic layer 26. . Thereby, the magnetostatic coupling between the hard bias layer 29 and the free magnetic layer 26 can be improved, and the single magnetic domain of the free magnetic layer 26 can be promoted.

The thickness of the hard bias layer 29 is 5
Preferably it is 0-300 °.

Next, the insulating layer 32 will be described. In the present invention, the insulating layers 32 are provided on both sides of the specular film 31. Thereby, the first electrode layer 20 and the second electrode layer 3
The sense current flowing between the three layers can be effectively passed only to the multilayer film 30.

Next, the structure of a magnetic sensing element according to another embodiment of the present invention will be described. FIG. 4 is a partial cross-sectional view of the structure of a magnetic sensing element according to a fourth embodiment of the present invention, as viewed from a surface facing a recording medium. The layers denoted by the same reference numerals as those in FIG. 1 indicate the same layers as those in FIG.

In this embodiment, as shown in FIG.
Hard bias layer 2 from below at the center of the upper surface of electrode layer 20 of FIG.
9, a nonmagnetic intermediate layer 27, a free magnetic layer 26, a nonmagnetic material layer 25, a pinned magnetic layer 24 having a three-layer ferrimagnetic structure, and an antiferromagnetic layer 23.

Each layer from the hard bias layer 29 to the antiferromagnetic layer 23 forms a multilayer film 34, and both end surfaces 34a of the multilayer film 34 are continuous surfaces. It is formed in a shape.

As shown in FIG. 4, the first electrode layer 20
From above to the both end surfaces 34a in the track width direction (X direction in the drawing) of the multilayer film 34.
1 is formed. The material and forming method of the specular film 31 are as described with reference to FIGS.

An insulating layer 32 is formed on the specular film 31, and a second electrode layer 33 is formed on the insulating layer 32 and on the antiferromagnetic layer 23.

FIG. 5 is a partial sectional view of the structure of a magnetic sensing element according to a fifth embodiment of the present invention, as viewed from a surface facing a recording medium. The layers denoted by the same reference numerals as those in FIG. 1 indicate the same layers as those in FIG.

The structure of the magnetic sensor of FIG. 5 is similar to the structure of the magnetic sensor of FIG. 1, but in FIG. 5, the free magnetic layer 26 has a three-layer ferrimagnetic structure.

Reference numeral 60 constituting the free magnetic layer 26
And 62 are magnetic layers, such as Co, CoFe,
It is formed of NiFe, CoFeNi, or the like. A nonmagnetic intermediate layer 6 made of Ru or the like is provided between the magnetic layers 60 and 62.
With this configuration, the magnetization directions of the magnetic layer 60 and the magnetic layer 62 are made antiparallel to each other by RKKY interaction. This is called an artificial ferri-state.

The thickness of each of the magnetic layers 60 and 62 is 1
It is formed at about 0-100 °. The non-magnetic intermediate layer 61
Is formed at a thickness of about 3 ° to 10 °.

The materials and thicknesses of the magnetic layers 60 and 62 are different so that the magnetic layers 60 and 62 have different magnetic moments per unit area. The magnetic moment per unit area is set by saturation magnetization Ms × film thickness t. For example, when the magnetic layers 60 and 62 are formed of the same material and the same composition,
By making the film thicknesses of the magnetic layers 60 and 62 different,
62 can have different magnetic moments. This makes it possible to appropriately form the magnetic layers 60 and 62 into an artificial ferrimagnetic structure.

As shown in FIG. 5, by forming the free magnetic layer 26 into an artificial ferrimagnetic structure, the effective thickness of the free magnetic layer 26 can be reduced without reducing the rate of change in resistance. The magnetization of the free magnetic layer 26 can be rotated with high sensitivity to a magnetic field. In addition, the free magnetic layer 26 can be appropriately made into a single magnetic domain, and a magnetic detection element with low Barkhausen noise and high reproduction output can be manufactured. Among the magnetic layers 60 and 62 of the free magnetic layer 26, the magnetic layer 60 in contact with the nonmagnetic material layer 25 is involved in the magnetoresistance effect.

In the embodiment shown in FIG. 5, magnetostatic coupling occurs between the hard bias layer 29 and the magnetic layer 62 of the free magnetic layer 26 that is closer to the hard bias layer 29, and The magnetization is converted into a single magnetic domain in the X direction shown. The magnetization of the other magnetic layer 60 of the free magnetic layer 26 is magnetized in an anti-parallel to the magnetization direction of the magnetic layer 62 by RKKY interaction with the magnetic layer 62.

The free magnetic layer 26 having the three-layer ferrimagnetic structure shown in FIG. 5 is applicable to the embodiments shown in FIGS. 2 to 4 and FIG. 6 described next.

In this embodiment, the non-magnetic intermediate layer 27
Although the bias underlayer 28 shown in FIG. 1 is not provided between the hard bias layer 29 and the hard bias layer 29, it may be provided.

The material and forming method of the specular film 31 are as described with reference to FIGS.

FIG. 6 is a partial cross-sectional view of the structure of a magnetic sensing element according to a sixth embodiment of the present invention as viewed from the side facing a recording medium. The layers denoted by the same reference numerals as those in FIG.
The same layer is shown.

In the embodiment shown in FIG. 6, the first electrode layer 2
0, a base layer 21, a seed layer 22, an antiferromagnetic layer 23, a fixed magnetic layer 24 having a three-layer ferrimagnetic structure, a non-magnetic material layer 25, a free magnetic layer 26, a non-magnetic intermediate layer 27, and a hard bias layer. 29 are formed.

Further, in this embodiment, a second electrode layer 35 is formed on the hard bias layer 29, and a multilayer film 36 is constituted by each layer from the underlayer 21 to the second electrode layer 35. . Both end surfaces 36a of the multilayer film 36,
36a is a continuous surface, and the multilayer film 36 is formed, for example, in a substantially trapezoidal shape.

In FIG. 6, a second electrode layer 35 is formed on the hard bias layer 29 so as to be continuous with both end surfaces in the track width direction (X direction in the drawing) of the hard bias layer 29. However, in such a case, an electrode layer (not shown) that is electrically connected to the second electrode layer 35 is provided behind the second electrode layer 35 in the height direction (Y direction in the figure). The layer extends rearward in the height direction.

In the embodiment shown in FIG. 6, a specular film 31 is formed from above the first electrode layer 20 to both end surfaces 36a of the multilayer film 36, and the specular film 3 is formed.
The insulating layer 32 is provided on the substrate 1.

The material and method for forming the specular film 31 are the same as those described with reference to FIGS.

In the embodiments shown in FIGS. 4 to 6, as in FIGS. 1 to 3, the specular films 31 are provided on both side end surfaces of the multilayer film, whereby the magnetization of the free magnetic layer 26 is fixed. When the magnetization of the magnetic layer 24 has a parallel relationship, for example, conduction electrons having up-spin electrons are:
Even when the light reaches the both end surfaces of the multilayer film, the light is appropriately mirror-reflected there and passes through the free magnetic layer 26.

Therefore, in the present invention, the mean free path λ + of the conduction electrons having the up-spin electrons can be extended, and the rate of change in resistance (ΔR / R) can be improved.

The above effect can be obtained if the specular film 31 is formed at least on both end surfaces in the track width direction of each layer from the fixed magnetic layer 24 to the free magnetic layer 26.

In the embodiment shown in FIGS. 4 to 6, similarly to FIGS. 1 to 3, the nonmagnetic intermediate layer 27 is provided on the surface of the free magnetic layer 26 opposite to the surface on which the nonmagnetic material layer 25 is formed.
, A hard bias layer 29 is provided.

Therefore, a magnetostatic coupling occurs between the end of the hard bias layer 29 and the end of the free magnetic layer 26, whereby the magnetization of the free magnetic layer 26 is changed in the track width direction (X direction in the drawing). Aligned to.

According to the present invention, the hard bias layer 29 is provided on the surface of the free magnetic layer 26 opposite to the surface on which the nonmagnetic material layer 25 is formed with the nonmagnetic intermediate layer 27 interposed therebetween. As described above, the buckling phenomenon that occurs when the hard bias layer is opposed to both sides in the track width direction of the hard bias layer 29 and the problem that the magnetization of the free magnetic layer 26 is firmly fixed and the magnetization reversal deteriorates can be solved. ,
Therefore, according to the present invention, it is possible to appropriately promote the formation of the single magnetic domain of the free magnetic layer 26, to improve the magnetization reversal of the free magnetic layer 26 with respect to an external magnetic field, to obtain a good read sensitivity, and to have excellent read waveform stability. It is possible to manufacture a magnetic sensing element.

Next, a method of manufacturing the magnetic sensing element shown in FIG. 1 will be described below with reference to manufacturing steps shown in FIGS. The manufacturing process diagram in the present invention,
FIG. 4 is a partial cross-sectional view of the magnetic sensing element during manufacture as viewed from a surface facing a recording medium.

In the step shown in FIG. 8, the first electrode layer 20 is formed on the substrate 37, and the underlayer 21 made of Ta or the like, and the first electrode layer 20 made of NiFeCr or the like are formed on the first electrode layer 20. Seed layer 22, antiferromagnetic layer 23 formed of PtMn or the like, magnetic layer 5 formed of Co or the like
1 and 53; a fixed magnetic layer 24 having a three-layer ferri structure in which a nonmagnetic intermediate layer 52 of Ru or the like is formed between the magnetic layers 51 and 53; a nonmagnetic material layer 25 formed of Cu or the like; Free magnetic layer 26 formed of a magnetic material layer 55 of NiFe or the like, non-magnetic intermediate layer 2 formed of Ru or the like.
7, bias underlayer 28 made of Cr or the like, CoC
The hard bias layer 29 formed of rPt or the like is sequentially formed by sputtering.

Then, a resist layer 38 is formed on the hard bias layer 29. The resist layer 38 may be a lift-off resist layer. At this time, the track width direction (X direction in the drawing) on the lower surface of the resist layer 38
Is T1. The width dimension T1 is about 1
It is preferably from 0 nm to 100 nm. More preferably, it is preferably 60 nm or less.

Next, as shown in FIG.
8 are removed by ion milling or reactive ion etching (RIE) in the direction of arrow F from the underlying layer 21 to the hard bias layer 29 on both sides of the multilayer film 30 (dotted line shown in FIG. 8). Removed on both sides). As a result, the underlayer 21 is formed at the center of the upper surface of the first electrode layer 20.
Multi-layered film 30 composed of layers from
Are formed as continuous inclined surfaces, and the multilayer film 30 remains in a substantially trapezoidal shape.

The track width Tw determined by the width in the track width direction of the upper surface of the free magnetic layer 26 left in this manufacturing process is about 10 nm or more and 100 nm or less.
Alternatively, it is more preferably 60 nm or less. Therefore, in the present invention, the element size can be made very small, and in the case of the CPP type magnetic detecting element as in the present invention, the reproduction output can be effectively increased.

Next, in the step shown in FIG. 9, in the track width direction of the multilayer film 30 composed of each layer from the base layer 21 provided at the center of the upper surface of the first electrode layer 20 to the hard bias layer 29 (FIG. Both end surfaces 30a in the illustrated X direction)
30a is ion-milled from the direction of the arrow. The milling angle θ2 is perpendicular to the surface of the substrate 37 (Z direction in the drawing).
Is preferably 20 ° to 70 °.

By this ion milling, at the time of FIG.
When both sides of the multilayer film 30 are shaved, the multilayer film 30 is removed.
It is possible to remove the deposits attached to both side end surfaces 30a.

As described above, both end surfaces 30 of the multilayer film 30 are formed.
By removing the deposits attached to a and cleanly processing the both end surfaces 30a, it is possible to effectively exert the specular reflection effect of the specular film 31 formed in the next step.

However, it is also possible to form the specular film 31 without removing the deposits. The method oxidizes or nitrides the deposit. As a result, the deposit can be turned into an oxide or a nitride, and the oxide or the nitride can function as the specular film 31.

Next, in the step shown in FIG. 10, a specular film 31 is formed by sputtering from the first electrode layer 20 to the both end surfaces 30a of the multilayer film 30. However, in the present invention, at least the specular film 31 may be formed on both end surfaces of the track width of each layer from the fixed magnetic layer 24 to the free magnetic layer 26. The sputtering method is preferably any one or more of an RF magnetron sputtering method, a DC magnetron sputtering method, an ion beam sputtering method, a long throw sputtering method, and a collimation sputtering method.

In the present invention, it is preferable that the specular film 31 is formed of the following oxide film.

That is, in the present invention, the specular film 31 is made of Fe—O, Ni—O, Co—O, Co—Fe—
O, Co-Fe-Ni-O, Al-O, Al-Q-O
(Where Q is B, Si, N, Ti, V, Cr, Mn, F
e, at least one selected from Co, Ni), RO (where R is Cu, Ti, V, Cr, Zr, Nb, Mo, H
It is preferable to use an oxide of at least one selected from f, Ta, and W).

For example, among Fe—O, α-Fe
₂ O _3, NiO among NiO, ALQO among Al-Q-O, it is preferable to satisfy the composition formula also becomes RO in RO.

In the present invention, when forming the above-described oxide film,
An oxide film may be directly deposited using an oxide target. Thereby, the specular film 3 formed of an oxide
1 can be formed.

In such a case, an oxidizing step is not required in a subsequent step, and the manufacturing process can be simplified. However, after forming the specular film 31 made of the oxide, the specular film 31 is renewed. It may be oxidized.

In the case where an oxide is not used as a target, first, a target made of a metal element or a non-metal element is prepared, and the first electrode layer 2 is formed using this target.
A film made of the metallic element or the non-metallic element is formed from above zero to both end surfaces 30a of the multilayer film 30. More specifically, when the specular film 31 is formed of TaO, for example, a Ta film is first formed on the first electrode layer 20 from both end surfaces 30a of the multilayer film 30.

Next, in the present invention, the Ta film is oxidized.
For the oxidation, it is preferable to use at least one of radical oxidation, ion oxidation, plasma oxidation and natural oxidation. Further, other oxidation methods may be used.
Preferred oxidation methods are reactive oxidations such as radical oxidation and ionic oxidation. Thereby, the specular effect of the specular film 31 can be appropriately exhibited.

The specular film 31 made of TaO can be formed by oxidizing the Ta film as described above.

In the above-described oxidation step, all the films made of metal elements and non-metal elements are oxidized, and the specular film 31 formed by this oxidation is close to the stoichiometric composition.
It is possible to form a sufficient potential barrier between adjacent multilayer films. As a result, a sufficient specular reflection effect can be obtained.

In the present invention, in addition to the above-mentioned oxide film, the above-mentioned specular film 31 is made of Al-N, Al-QN (where Q is B, Si, O, Ti, V, Cr, Mn, Fe, C
o, Ni or more), RN (where R
Are Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W
Or at least one nitride selected from the group consisting of:

Among Al-N, AlN, Al-Q-
It is preferable to satisfy the composition formula of AlQN among N and RN among RN.

In such a case, a specular film 31 made of a nitride can be formed by forming a film made of a metal element or a nonmetal element by sputtering and then nitriding the film.

Alternatively, a specular film 31 may be formed by preparing a target made of a nitride and sputtering the nitride on both sides of the multilayer film 30. Thus, the manufacturing process can be simplified without the need for a nitridation step when forming the specular film 31, but after the specular film 31 made of the nitride is formed, the specular film 31 may be further nitrided. .

When the above-described specular film 31 made of an oxide or a nitride, or a metal element film or a non-metal element film before being oxidized or nitrided, is formed by sputtering, the surface 37 Direction), 2
Preferably, the sputtered particle irradiation angle θ1 is 0 ° to 70 °.

In this manner, the specular film 31 can be appropriately formed.
Can be easily and appropriately formed on both end surfaces 30a of the multilayer film 30.

Alternatively, in the present invention, the specular film 31 may be formed of a semi-metallic Heusler alloy. The above-described metal whistler alloys include NiMnSb, PtMn.
Sb or the like can be selected. It is preferable to form these semi-metallic Whistler alloys by sputtering.

The sputtering conditions for forming the above-mentioned specular film 31 are, for example, that the temperature of the substrate 37 is 2
0 ° C. to 100 ° C., the distance between the substrate 37 and the target is 100 to 300 mm, and the Ar gas pressure is 10 ⁻⁵ to 10 ^−3.
Torr (1.3 × 10 ^{−3 to} 0.13 Pa).

The specular film 31 formed as described above is formed on the upper surface of the resist layer 38 or on both side end surfaces 38.
Also adheres to b.

Next, in a step shown in FIG. 10, an insulating layer 32 is formed on the specular film 31 by sputtering. The irradiation angle of the sputtered particles when forming the insulating layer 32 is closer to the direction perpendicular to the surface of the substrate 37 than the irradiation angle of the sputtered particles when forming the specular film 31. The sputtering particle irradiation angle θ3 at the time of forming the insulating layer 32 is
It is preferable that the angle is not less than 0 ° and not more than 40 ° with respect to the surface vertical direction of the substrate 37.

In the present invention, the insulating layer 32 is
Of the hard bias layer 29 corresponding to the uppermost layer.

In the present invention, the insulating layer 32 is made of Al ₂ O ₃
It is preferably formed of an insulating material such as or SiO _2.

In the sputtering film formation of the insulating layer 32, for example, a target made of Al ₂ O ₃ is prepared, and this target is sputtered to form the insulating layer 32 made of Al ₂ O ₃ .

The sputtering conditions for forming the insulating layer 32 include, for example, setting the temperature of the substrate 37 to 0 to 100.
° C and the distance between the substrate 37 and the target is 100 to 30
0 mm, and Ar gas pressure of 10 ^-5 to 10 ^-3 Torr
(1.3 × 10 ^{−3 to} 0.13 Pa).

The insulating material layer 32a constituting the insulating layer 32 also adheres to the upper surface 38a and both side end surfaces 38b of the resist layer 38.

Then, the resist layer 38 is removed. As shown in FIG. 10, a specular film 31 and a layer 3 of an insulating material are formed on the upper surface 38a and the end surface 38b of the resist layer 38.
Since 2a is attached, it is difficult to remove the resist layer 38 by immersing it in a solvent.

Therefore, in the present invention, the side surface 38 of the resist layer 38 is formed by, for example, ion milling from the side.
b, the specular film 31 and the insulating material layer 32a
After exposing the side surface 38b of the resist layer 38, the resist layer 38 is immersed in a solvent to dissolve and remove the resist layer 38.

Alternatively, the specular film 31 and the insulating material layer 32a attached to the upper surface 38a of the resist layer 38 are partially removed by scrub cleaning to expose a part of the surface of the resist layer 38. Resist layer 3
8 is immersed in a solvent to dissolve and remove the resist layer 38.

In the scrub cleaning, for example, particles of dry ice are made to collide with the specular film 31 and the insulating material layer 32a attached to the surface of the resist layer 38, thereby forming the specular film 31 and the insulating material layer. 32
There is a method of removing a part of.

FIG. 1 shows a state in which the resist layer 38 has been removed.
It is one. As shown in FIG.
The tip of 1 protrudes from the upper surface of the hard bias layer 29 or the insulating layer 32 in the Z direction in the figure, and the protruding portion becomes a burr 31a. Therefore, in the step shown in FIG. 11, the burr 31a is removed. It is preferable to use scrub cleaning for removing the burrs 31a.

The scrub cleaning includes a method of removing the burrs by causing the dry ice particles to collide with the burrs 31a.

In this scrub cleaning step, scrub cleaning is performed from the upper surface of the insulating layer 32 to the upper surface of the hard bias layer 29 to remove the burrs 31a and clean the upper surface of the insulating layer 32 and the upper surface of the hard bias layer 29 cleanly.

Thereafter, when a second electrode layer 33 is formed on the insulating layer 32 and on the hard bias layer 29, the magnetic sensing element shown in FIG. 1 is completed.

FIG. 12 to FIG. 16 correspond to FIG. 2 or FIG.
FIG. 7 is a process chart showing a method for manufacturing the magnetic sensing element shown in FIG.
Each of the drawings is a partial cross-sectional view of the magnetic sensing element as viewed from a surface facing a recording medium. In FIGS. 12 to 16, the layers denoted by the same reference numerals as those in FIGS. 8 to 11 indicate the same layers.

In the step shown in FIG.
Is formed, and an insulating layer 39 is formed on the first electrode layer 20.

Here, regarding the material of the insulating layer 39,
It is preferable that the insulating layer be formed of an insulating material layer made of the above oxide or nitride. However, the insulating layer 39 may be formed of a material other than oxide or nitride.

In the step shown in FIG. 13, a groove 39a is formed in the center of the insulating layer 39 in the drawing by patterning. The width of the groove 39a in the track width direction (X direction in the drawing) is formed as T3, and the width T3 is preferably formed at least larger than the track width Tw. As described above, the width T3 is set to the track width Tw.
By forming the track width Tw larger, it becomes possible to appropriately define the track width Tw in a later step.

Next, in the step shown in FIG.
9, the first electrode layer 37 exposed below the groove 39a.
On top, the underlayer 21, seed layer 22, antiferromagnetic layer 23, fixed magnetic layer 24, nonmagnetic material layer 25, free magnetic layer 26, nonmagnetic intermediate layer 27, and hard bias layer 29
Are continuously laminated.

Further, a resist layer 38 is formed on the upper surface of the multilayer film 30. Next, both end portions of the multilayer film 30 which are not covered with the resist layer 38 are removed by ion milling or the like from the direction F in the drawing (both sides of the dotted line in the drawing are removed). FIG. 15 shows this state.

As shown in FIG. 15, the multilayer film 30 has a first
Is left between the insulating layers 39 provided on both sides of the electrode layer 20 in the track width direction (X direction in the drawing).

The constituent elements of the multilayer film 30 removed by the ion milling in the step of FIG. 14 are attached to both end surfaces 30a in the track width direction of the multilayer film 30 shown in FIG. In order to remove the deposits, in the step shown in FIG. 15, both end surfaces 30a of the multilayer film 30 are further ion-milled from the direction A to remove the deposits.

In the step of FIG. 15, however, the insulating layers 39 provided on both sides of the multilayer film 30 are removed by the ion milling while removing the deposits.
The insulating material element may adhere to both end surfaces 30a of the multilayer film 30 (see the direction B in the drawing).

If the deposit of the insulating material element is an oxide or a nitride, the deposit may be left as a specular film 31 as it is. Alternatively, the attached matter of the insulating material can be further oxidized or nitrided to form the attached matter of the insulating material as the specular film 31 having an excellent specular effect. Thus, the specular film 31 of the magnetic sensing element shown in FIG. 2 is completed.

Further, after the step shown in FIG. 15, the step shown in FIG. 16 is performed. In the step shown in FIG. 16, a metal element or a nonmetal element is further formed by sputtering or the like from the insulating layer 39 to both end surfaces 30 a of the multilayer film 30, and the film is oxidized or nitrided to form a specular film 31 are doing. Alternatively, the specular film 31 is formed on the insulating layer 39 using a target formed of oxide or nitride.
The film is formed from above on both side end surfaces of the multilayer film 30.
Thereby, the specular film 31 of the magnetic sensing element shown in FIG. 3 can be formed. As shown in FIG. 16, when the specular film 31 is formed again from above the insulating layer 39 to both end surfaces of the multilayer film 30, the first electrode layer 2 exposed from between the insulating layer 39 and the multilayer film 30 is formed.
This is preferable because the upper surface 20a is appropriately filled with the specular film 31.

Alternatively, in the present invention, the specular film 31 may be formed by the following method. That is, the step shown in FIG. 9 is not performed after the step shown in FIG. 8, and as shown in FIG. 17, both sides 30a of the multilayer film 30 are oxidized or removed while leaving the attached matter on both sides 30a of the multilayer film 30 as it is. It is nitrided.

In this oxidation or nitridation step, not only the deposits but also the multilayer film 30 itself may be partially oxidized or nitrided. In such a case, the oxidized or nitrided deposits and the multilayer film 30 may be removed. It is possible to make a part of both side end surfaces 30 a function as the specular film 31.

The magnetic sensing element shown in FIGS. 4 and 5 is manufactured by using, for example, the manufacturing steps shown in FIGS. The difference from the manufacture of the magnetic sensing element of FIG. 1 is that the process shown in FIG.
On the electrode layer 20, a hard bias layer 29, a nonmagnetic intermediate layer 27, a free magnetic layer 26, a nonmagnetic material layer 25, a fixed magnetic layer 24, and an antiferromagnetic layer 23 are laminated in this order.

In the manufacture of the magnetic sensing element shown in FIG.
Is that the free magnetic layer 26 is made into a three-layer ferri structure in the step shown in FIG.

FIG. 18 is a process chart showing a method of manufacturing the magnetic sensing element shown in FIG. In FIG. 18, the first electrode layer 2
0, an underlayer 21, a seed layer 22, an antiferromagnetic layer 2
Fixed magnetic layer 24 having a three-layer ferrimagnetic structure, nonmagnetic material layer 2
5. After the free magnetic layer 26, the non-magnetic intermediate layer 27, and the hard bias layer 29 are successively formed, a second electrode layer 35 is further formed on the hard bias layer 29 by sputtering.

Then, a resist layer 40 is formed on the second electrode layer 35, and the multilayer film 36 from the base layer 21 to the second electrode layer 35, which is not covered with the resist layer 40, is formed by an arrow F. It is removed by ion milling or reactive ion etching (RIE) from the direction, and the subsequent manufacturing process is exactly the same as in FIGS.

In the manufacturing process shown in FIG. 18, since the film is formed up to the second electrode layer 35 in the first stage of forming the multilayer film 30, the second electrode layer 35 is formed on the hard bias layer 29 later.
There is no need to form the electrode layer 35, and the manufacturing process can be simplified.

FIGS. 19 to 21 are process diagrams showing a method for manufacturing another magnetic sensing element. 19 to 21
FIG. 3 is a partial cross-sectional view of the magnetic sensing element being manufactured as viewed from the side facing the recording medium.

In the step shown in FIG. 19, a first electrode layer 20, a base layer 21, a seed layer 22, an antiferromagnetic layer 23, a pinned magnetic layer 24 having a three-layer ferri structure, and a nonmagnetic material layer are formed on a substrate 37. 25 and the free magnetic layer 26 are continuously formed by sputtering.

Hereinafter, the material and the thickness of each layer will be described. The first electrode layer 20 is formed of, for example, α-Ta, A
It is formed of u, Cr, Cu (copper), W (tungsten) or the like.

The underlayer 21 is made of Ta, Hf, N
It is formed of at least one of b, Zr, Ti, Mo, and W. The underlayer 21 is formed with a thickness of about 50 ° or less. The underlayer 21 may not be formed.

Next, the seed layer 22 is mainly made of a face-centered cubic crystal and the (111) plane is preferentially oriented in a direction parallel to the interface with the antiferromagnetic layer 23, for example, a NiFe alloy.
Alternatively, a Ni—Fe—Y alloy (where Y is Cr, R
h, Ta, Hf, Nb, Zr, and Ti).

The seed layer 22 is made of, for example, 3
It is formed at about 0 °. Further, the seed layer 22 may not be formed.

Next, the antiferromagnetic layer 23 is formed of an element X (where X is one of Pt, Pd, Ir, Rh, Ru, and Os).
Or two or more elements) and Mn. Alternatively, the antiferromagnetic layer 23
With element X and element X '(element X' is Ne, A
r, Kr, Xe, Be, B, C, N, Mg, Al, S
i, P, Ti, V, Cr, Fe, Co, Ni, Cu, Z
n, Ga, Ge, Zr, Nb, Mo, Ag, Cd, S
n, Hf, Ta, W, Re, Au, Pb, and rare earth elements), and an antiferromagnetic material containing Mn.

These antiferromagnetic materials have excellent corrosion resistance and a high blocking temperature, and will be described below.
4 can generate a large exchange anisotropic magnetic field at the interface. Further, it is preferable that the antiferromagnetic layer 23 is formed to have a thickness of 80 ° or more and 250 ° or less.

Next, layers 51 and 53 constituting the pinned magnetic layer 24 are magnetic layers, for example, Co, CoFe, N
It is formed of iFe, CoFeNi, or the like. The magnetic layer 5
A non-magnetic intermediate layer 52 made of Ru or the like is provided between
With this configuration, the magnetization directions of the magnetic layer 51 and the magnetic layer 53 are antiparallel to each other. This is called an artificial ferri-state.

The antiferromagnetic layer 23 and the fixed magnetic layer 24
An exchange anisotropic magnetic field is generated between the magnetic layers 51 in contact with the antiferromagnetic layer 23 by heat treatment in a magnetic field. For example, when the magnetization of the magnetic layer 51 is fixed in the height direction (Y direction in the drawing), One magnetic layer 53 is magnetized and fixed in a direction opposite to the height direction (opposite to the Y direction in the drawing) by the RKKY interaction. With this configuration, the magnetization of the fixed magnetic layer 24 can be stabilized, and the exchange anisotropic magnetic field generated at the interface between the fixed magnetic layer 24 and the antiferromagnetic layer 23 can be apparently increased.

For example, the thickness of the magnetic layers 51 and 53 is about 10 to 70 °. The non-magnetic intermediate layer 52 is formed with a thickness of about 3 ° to 10 °.

The materials and thicknesses of the magnetic layers 51 and 53 are different so that the magnetic layers 51 and 53 have different magnetic moments per unit area. The magnetic moment per unit area is set by saturation magnetization Ms × film thickness t. For example, when the magnetic layers 51 and 53 are formed of the same material and the same composition,
By making the film thicknesses of the magnetic layers 51 and 53 different,
53 can have different magnetic moments. This makes it possible to appropriately form the magnetic layers 51 and 53 into an artificial ferrimagnetic structure.

In the present invention, the pinned magnetic layer 24 is not an artificial ferrimagnetic structure but a NiFe alloy, a NiFeCo alloy,
Alternatively, it may be formed of a single layer film or a laminated film such as a CoFe alloy.

Next, the nonmagnetic material layer 25 is formed of a conductive material having a low electric resistance, such as Cu. The non-magnetic material layer 25 is formed to a thickness of, for example, about 25 °.

Next, the free magnetic layer 26 is formed in a two-layer structure. It is preferable to form a Co film 54 on the side facing the nonmagnetic material layer 25. Thereby, diffusion of a metal element or the like at the interface with the nonmagnetic material layer 25 can be prevented, and the resistance change rate (ΔR / R) can be increased. On the Co film 54, a NiFe alloy, a CoFe alloy, C
o, It is preferable to form the magnetic material layer 55 made of a CoNiFe alloy or the like. It is preferable that the entire thickness of the free magnetic layer 26 is not less than 20 ° and not more than 100 °.

The free magnetic layer 26 may be formed in a one-layer structure using any of the magnetic materials described above. Further, the free magnetic layer 26 may be formed in the same three-layer ferrimagnetic structure as the pinned magnetic layer 24.

In the present invention, a resist layer 41 is formed on the free magnetic layer 26 as shown in FIG.
It is preferable that the width dimension T2 of the resist layer 41 in the track width direction (X direction in the drawing) is formed to be substantially the same as the track width Tw determined by the width dimension of the upper surface of the free magnetic layer 26.

In the step shown in FIG. 19, both sides of the multilayer film 42, which is not covered with the resist layer 41 and includes the layers from the underlayer 21 to the free magnetic layer 26, are ion-milled in the direction of arrow F. Etc. (both sides of the dotted line in the figure are removed).

Next, both end surfaces of the multilayer film 42 are side-milled to remove re-adhered matter adhering to the both end surfaces. The milling angle of the side milling is preferably 20 ° to 70 ° with respect to the vertical direction of the upper surface of the substrate 37.

Next, in the step shown in FIG. 20, the first electrode layer 20 is formed on both end surfaces 42a in the track width direction (X direction in the drawing) of the multilayer film 42 left on the central upper surface of the first electrode layer 20. A specular film 31 is formed by sputtering over the surface 20.

However, in the present invention, the specular film 31 is used.
May be formed at least on both end surfaces in the track width direction of each layer from the fixed magnetic layer 24 to the free magnetic layer 26.

In the present invention, it is preferable that the specular film 31 is formed of an oxide film described below.

That is, in the present invention, the specular film 31 is made of Fe—O, Ni—O, Co—O, Co—Fe—
O, Co-Fe-Ni-O, Al-O, Al-Q-O
(Where Q is B, Si, N, Ti, V, Cr, Mn, F
e, at least one selected from Co, Ni), RO (where R is Cu, Ti, V, Cr, Zr, Nb, Mo, H
It is preferable to use an oxide of at least one selected from f, Ta, and W).

In addition, for example, among Fe—O, α-Fe
₂ O _3, NiO among NiO, ALQO among Al-Q-O, it is preferable to satisfy the composition formula also becomes RO in RO.

In the present invention, a target made of a metal element or a non-metal element is prepared, and the target is used to extend the metal element or the non-metal element from the first electrode layer 20 to both end faces 42 a of the multilayer film 42. A film is formed. More specifically, for example, when the specular film 31 is formed of TaO, a Ta film is first formed from the first electrode layer 20 to both end surfaces 42a of the multilayer film 42.

Next, in the present invention, the Ta film is oxidized.
For the oxidation, it is preferable to use one or more oxidation methods of radical oxidation, ion oxidation, plasma oxidation, and natural oxidation. Further, other oxidation methods may be used. Further, as the oxidation method, oxidation utilizing reactivity such as radical oxidation or ion oxidation is preferable, whereby the specular film 31 having an appropriate specular effect is obtained.
Can be formed.

The specular film 31 made of TaO can be formed by oxidizing the Ta film through the above steps.

The above-mentioned film made of a metal element or a non-metal element is oxidized, and the specular film 31 formed by this is close to the stoichiometric composition, and has a sufficient space between adjacent films. It becomes possible to form a potential barrier. As a result, a sufficient specular reflection effect can be obtained.

In the present invention, in addition to the above-mentioned oxide film, the above-mentioned specular film 31 is made of Al-N, Al-QN (where Q is B, Si, O, Ti, V, Cr, Mn, Fe, C
o, Ni or more), RN (where R
Are Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W
Or at least one nitride selected from the group consisting of:

In addition, among Al-N, AlN, Al-Q-
It is preferable to satisfy the composition formula of AlQN among N and RN among RN.

In such a case, a specular film 31 made of a nitride can be formed by forming a film made of a metal element or a non-metal element by sputtering and then nitriding the metal element film or the non-metal element film. .

Alternatively, in the present invention, a target made of the above-described oxide film or nitride film is prepared in advance, and a specular film 31 made of an oxide or nitride is formed directly on both end surfaces 30a of the multilayer film 30 from the target. May be. In this case, the manufacturing process can be simplified without the need for the oxidation or nitridation process. In the present invention, after the specular film 31 made of the oxide or nitride is directly formed, the specular film 3 is further formed.
One may be subjected to an oxidation or nitriding step.

Alternatively, in the present invention, the specular film 31 may be formed of a semi-metallic Whistler alloy. The above-described metal whistler alloys include NiMnSb, PtMn.
Sb or the like can be selected. It is preferable to form these semi-metallic Whistler alloys by sputtering.

In the present invention, the specular film 31
Angle of deposition of the sputtered particles when depositing
Preferably, it is 70 °. Thus, the specular film 31 can be easily and appropriately formed on both side end surfaces 42a of the multilayer film 42.

The sputtering conditions for forming the above-mentioned specular film 31 are, for example, the following.
0 to 100 ° C., and the distance between the substrate 37 and the target is 1
And an Ar gas pressure of 10 ⁻⁵ to 10 ⁻³ T
orr (1.3 × 10 ^{−3 to} 0.13 Pa).

The specular film 31 formed as described above also adheres to the upper surface 41a of the resist layer 41 and both end surfaces 41b.

Next, in a step shown in FIG. 20, an insulating layer 32 is formed on the specular film 31 by sputtering. The irradiation angle of the sputtered particles when forming the insulating layer 32 is closer to the direction perpendicular to the surface of the substrate 37 than the irradiation angle of the sputtered particles when forming the specular film 31. The sputtering particle irradiation angle θ5 at the time of forming the insulating layer 32 is:
It is preferable that the angle is not less than 0 ° and not more than 40 ° with respect to the surface vertical direction of the substrate 37.

In the present invention, the insulating layer 32 is formed up to the lower surface of the free magnetic layer 26 or lower. In the present invention, it is preferable that the insulating layer 32 is formed of an insulating material such as Al ₂ O ₃ or SiO ₂ .

In the sputtering film formation of the insulating layer 32, for example, a target made of Al ₂ O ₃ is prepared, and the insulating layer 32 made of Al ₂ O ₃ is formed from this target.

The sputtering conditions for forming the insulating layer 32 are as follows: the temperature of the substrate 37 is 20 to 100 ° C., and the distance between the substrate 37 and the target is 100 to 300 m.
m and an Ar gas pressure of 10 ⁻⁵ to 10 ⁻³ Torr (1.
3 × 10 ^{−3 to} 0.13 Pa).

The layer 32a of the insulating material constituting the insulating layer 32 also adheres to the upper surface 41a of the resist layer 41 and the both end surfaces 41b.

Next, a hard bias layer 43 is formed on the insulating layer 32 by sputtering. The irradiation angle of the sputtered particles during the sputtering of the hard bias layer 43 depends on the thickness of the insulating layer 3.
2 is the same as the ion irradiation angle θ5 at the time of sputtering.

The hard bias layer 43 is made of CoP
It is preferable to use a t alloy or a CoPtCr alloy.

In the present invention, the hard bias layer 4
A bias underlayer may be provided between the insulating layer 3 and the insulating layer 32. Preferably, the bias underlayer is formed of a metal film having a body-centered cubic structure (bcc structure).
At this time, the crystal orientation of the bias underlayer is (10
It is preferable that the 0) plane is preferentially oriented.

Here, since the lattice constant of the hcp structure of the CoPt-based alloy constituting the hard bias layer 43 and the bias underlayer formed of the above-described metal film becomes close to each other,
Pt-based alloys are less likely to form the fcc structure and are more likely to be formed with the hcp structure. At this time, the c-axis of the hcp structure is CoP
It is preferentially oriented in the interface between the t-based alloy and the bias underlayer. Since the hcp structure generates a larger magnetic anisotropy in the c-axis direction than the fcc structure, the coercive force Hc when a magnetic field is applied to the hard bias layer increases. Furthermore, since the c-axis of hcp is preferentially oriented within the boundary between the CoPt-based alloy and the bias underlayer, the residual magnetization increases, and the squareness ratio S obtained by residual magnetization / saturation magnetization increases. As a result, the characteristics of the hard bias layer 43 can be improved, and the bias magnetic field generated from the hard bias layer 43 can be increased.

In the present invention, the crystal structure is a body-centered cubic structure (b
(cc structure) metal film is composed of Cr, W, Mo, V, Mn, N
It is preferable to be formed of one or more of b and Ta.

The bias underlayer is formed of the multilayer film 4
It is preferable not to extend and form on both side end surfaces 42a of the second. This is because if the bias underlayer extends to both side end surfaces 42a, the buckling phenomenon becomes remarkable. However, even if the bias underlayer extends to both end surfaces 42a of the multilayer film 42,
If the thickness of the extended portion in the track width direction (X direction in the drawing) of the bias underlayer is 1 nm or less, the buckling phenomenon can be reduced. The bias underlayer may be extended.

The bias material layer 43a of the hard bias layer 43 adheres to the upper surface 41a of the resist layer 41 and the insulating material layer 32a adhered to both side end surfaces 41b.

Since the hard bias layer 43 is formed at a position facing both end surfaces of the free magnetic layer 26,
When a longitudinal bias magnetic field is supplied from the hard bias layer 43 to the free magnetic layer 26, the magnetization of the free magnetic layer 26 is appropriately single-domain in the track width direction (X direction in the drawing).

Next, an insulating layer 44 is formed on the hard bias layer 43 by sputtering. The insulating layer 44 is formed of a general insulating material such as Al ₂ O ₃ or SiO ₂ . The thickness of the insulating layer 44 is preferably about 50 to 200 °, so that it is possible to prevent a sense current flowing from the second electrode layer 33 to be described later from flowing to the hard bias layer 43. . If the insulating layer 32 has a sufficient insulating layer, the insulating layer 44 need not be provided.

The sputtered particle irradiation angle at the time of sputtering the insulating layer 44 is substantially the same as the sputtered particle irradiation angle θ5 at the time of sputtering the insulating layer 32.

The insulating layer 44a of the insulating layer 44
Also adheres to the upper surface of the resist layer 41 and the bias material layer 32a adhered to both end surfaces.

Then, the resist layer 41 is removed. As shown in FIG. 20, a specular film 31 and a layer 3 of an insulating material are formed on the upper surface 41a and the end surface 41b of the resist layer 41.
It is difficult to remove the resist layer 41 by immersing it in a solvent because 2a and the like are attached.

For this reason, in the present invention, the specular film 31 and the insulating material layer 32a attached to the side surface of the resist layer 41 are removed by, for example, ion milling from the side surface, and the side surface of the resist layer 41 is exposed. Thereafter, the resist layer 41 is immersed in a solvent to dissolve and remove the resist layer 41.

Alternatively, the specular film 31 and the insulating material layer 32a attached to the upper surface of the resist layer 41 are partially removed by scrub cleaning to expose a part of the surface of the resist layer 41. Resist layer 41
Is immersed in a solvent to dissolve and remove the resist layer 41.

In the scrub cleaning, particles of, for example, dry ice are made to collide with the specular film 31 and the insulating material layer 32a attached to the surface of the resist layer 41, thereby to remove the specular film 31 and the insulating material. There is a method of removing a part of the layer 32a and the like.

After removing the resist layer 41, the structure shown in FIG.
Since the burrs 31a are generated as shown in (1), the burrs 31a are removed. It is preferable to use scrub cleaning for removing the burrs 31a.

In the scrub cleaning, there is a method of removing the burrs by causing the dry ice particles to collide with the burrs 31a.

Note that the scrub cleaning is performed by using the insulating layer 44.
From the upper surface of the free magnetic layer 26 to the upper surface of the free magnetic layer 26 to remove the burrs and cleanly process the upper surfaces of the insulating layer 44 and the free magnetic layer 26.

After that, when the second electrode layer 33 is formed on the free magnetic layer 26 from the insulating layer 44, FIG.
Is completed.

In the magnetic sensing element shown in FIG. 21, the specular films 31 are formed on both sides of the multilayer film 42 in the track width direction.
When the magnetization of layer 6 and the magnetization of pinned magnetic layer 24 are in a parallel relationship, for example, conduction electrons having up-spin electrons reach mirror edges 42a of both sides of multilayer film 42, and are appropriately mirror-reflected there. It passes through the inside of the magnetic layer 26.

Therefore, according to the present invention, the mean free path λ + of the conduction electrons having the up-spin electrons can be extended even when the element area is reduced, so that the reproduction output is improved and the resistance change rate (ΔR / R) is improved. It becomes possible to plan.

The structure of the magnetic sensing element shown in FIGS. 22 to 25 is slightly different from that of the magnetic sensing element shown in FIG.

In the magnetic sensing element shown in FIG. 22, the insulating layer 32 is not provided on both sides of the multilayer film 42 in the track width direction (X direction in the drawing), and the hard bias layer 43 is provided via the specular film 31. It is only formed.

As shown in FIG. 22, a specular film 31 is formed below the hard bias layer 43, and an insulating layer 44 is formed on the hard bias layer 43. That is, the hard bias layer 43 and the electrode layer 20,
33, the specular film 31 or the insulating layer 44 is interposed.
The current loss shunted from 0 and 33 to the hard bias layer 43 can be reduced. The bias underlayer described with reference to FIG. 21 may be provided between the hard bias layer 43 and the specular film 31.

In the magnetic sensing element shown in FIG. 23, insulating layers 39 are formed on the first electrode layer 20 at predetermined intervals in the track width direction, and the first electrode layer exposed within the interval is formed. A multilayer film 42 is formed on 20. That is, this embodiment has a configuration in which the insulating layers 39 are provided on both sides of the multilayer film 42 in the track width direction.

Then, as shown in FIG.
9, a specular film 31 is formed on both side end surfaces 42a of the multilayer film 42. The specular film 31 is also formed on the upper surface 20a of the first electrode layer 20 exposed between the insulating layer 39 and the multilayer film 42.

In the track width direction of the multilayer film 42 (X in the drawing)
Hard bias layers 43 are formed on both sides in the direction (i.e., direction) via the specular film 31. Since the specular film 31 is formed below the hard bias layer 43 in the drawing, the hard bias layer 43 and the first electrode layer 20 are formed.
The space is insulated by the specular film 31.

On the hard bias layer 43, an insulating layer 44 is formed, and the hard bias layer 43 and the second electrode layer 33 are insulated. As shown in FIG. 23, the second layer extends from the multilayer film 42 to the insulating layer 44.
Electrode layer 33 is formed.

The method of manufacturing the magnetic sensing element shown in FIG.
This can be achieved by using the manufacturing steps shown in FIGS.

That is, first, as in the process shown in FIG.
An insulating layer 39 is formed on the first electrode layer 20, and a groove 39a having a predetermined width dimension T3 is formed by patterning in the track width direction (X direction in the drawing) of the insulating layer 39 in the step shown in FIG.

Further, using the process shown in FIG. 14, a multilayer film 42 is formed on the insulating layer 39 and on the first electrode layer 20. Then, a resist layer 38 is formed on the multilayer film 42, and both sides of the multilayer film 42 not covered with the resist layer 38 are removed by ion milling or the like.

Next, using the process shown in FIG. 15, the deposits adhering to both end surfaces of the multilayer film 42 are removed by ion milling or the like. At this time, the insulating layer 39 is also shaved under the influence of the ion milling, and the shaved insulating material may adhere to both end surfaces 42a of the multilayer film 42. The specular film is formed by oxidizing or nitriding the insulating material. Since the insulating material can function as 31, the insulating material may be left as it is.

Here, the reason why the insulating layer 39 is provided is that the first electrode layer 20 is ion-milled without the insulating layer 39 in the ion milling step shown in FIG. This is because the metal element adheres to both end surfaces 42a of the multilayer film 42 (reverse sputtering phenomenon). The metal element has to be removed again by ion milling in order to cause a short circuit between the layers of the multilayer film 42. However, since the above-mentioned reverse sputtering phenomenon occurs, the metal element must be appropriately removed. Elemental deposits cannot be removed. Therefore, in the present invention, the insulating layers 39 are provided on both sides of the multilayer film 42.

Then, using the process shown in FIG. 16, the specular film 31 is formed from above the insulating layer 39 to both end surfaces 42 a of the multilayer film 42.

The specular film 31 is formed by first forming a metal element or a non-metal element, and then oxidizing or nitriding the metal element or the non-metal element to form the specular film 31, or an oxide or nitride. A method is used in which a target is prepared, and a specular film 31 made of an oxide or a nitride is formed directly from the target.

By utilizing the process shown in FIG. 16, the specular film 31 is also formed on the first electrode layer 20 exposed between the multilayer film 42 and the insulating layer 39, and the first electrode layer 2
0 is completely closed by the specular film 31.

As shown in FIG. 23, a hard bias layer 43 is formed on the specular film 31, an insulating layer 44 is formed on the hard bias layer 43, and finally, a multilayer film is formed on the insulating layer 44. The second electrode layer 33 is formed on the top of the second electrode layer.

Alternatively, in the present invention, the specular film 31
The following method can be proposed as another method of forming

That is, the present invention is a method of oxidizing or nitriding both end faces in the track width direction of the multilayer film 42 so that the surface portions of both end faces of the multilayer film 42 function as the specular film 31.

FIG. 24 is different from FIG. 22 in that a multilayer film 42 is laminated from the bottom in the order of the free magnetic layer 26, the nonmagnetic material layer 25, the fixed magnetic layer 24, and the antiferromagnetic layer 23.

Then, the specular film 31 is formed on both end surfaces 42 a of the multilayer film 42 and on the first electrode layer 20. The specular film 31 is formed by any of the methods described above.

[0314] As shown in FIG.
1, a hard bias layer 43 is formed, and an insulating layer 44 is formed on the hard bias layer 43.
Then, from the insulating layer 44 to the multilayer film 42, the second
Electrode layer 33 is formed.

In FIG. 25, the free magnetic layer 2 shown in FIG.
6, the free magnetic layer 26 has a laminated ferrimagnetic structure. Reference numerals 60 and 62 denote magnetic layers, which face each other with a non-magnetic intermediate layer 61 interposed therebetween. The magnetization of the magnetic layers 60 and 62 is brought into an anti-parallel state by the RKKY interaction generated between the magnetic layers 60 and 62.

Also in this embodiment, both end surfaces 4 of the multilayer film 42 are formed.
A specular film 31 is formed from above 2 a to above first electrode layer 20. The specular film 31 is formed by any of the methods described above. A hard bias layer 43 is formed on the specular film 31, and an insulating layer 44 is formed on the hard bias layer 43. Then, a second electrode layer 33 is formed from the insulating layer 44 to the multilayer film 42.

According to the manufacturing method of the present invention described in detail above, it is possible to appropriately and easily form the specular film 31 on both sides of the multilayer film. Further, in particular, by performing a side milling process before forming the specular film 31 to remove a deposit attached to both end surfaces of the multilayer film, the specular reflection effect of the specular film 31 is more appropriately exhibited. Can be done.

After the resist layer is removed, the tip of the specular film 31 remains as burrs, and the burrs are appropriately removed by scrub cleaning, so that the second burr in the subsequent process is removed.
The electrode layer 33 can be easily and appropriately formed.

The magnetic detecting element according to the present invention can be used not only for a thin-film magnetic head mounted on a hard disk drive but also for a magnetic head for tape, a magnetic sensor, and the like.

[0320]

According to the present invention described in detail above, a specular film, that is, a specular reflection film is provided on at least both end surfaces in the track width direction of each layer from the pinned magnetic layer to the free magnetic layer.

For this reason, according to the present invention, even if the track width Tw is narrowed, the up-spin electrons reaching the both end surfaces of the multilayer film have the spin state by providing the specular films on both end surfaces of the multilayer film. Specularly reflect while maintaining (energy, quantum state, etc.). Then, the conduction electrons of the specularly reflected up-spin electrons can pass through the free magnetic layer by changing the moving direction.

Therefore, according to the present invention, even when the device area is reduced, the mean free path λ + of the conduction electrons having the up-spin electrons can be extended as compared with the conventional case, and thus the conduction electrons having the up-spin electrons can be extended. Between the mean free path λ + and the mean free path λ− of conduction electrons having down-spin electrons can be increased, thereby improving the reproduction output and the resistance change rate (ΔR / R). become.

In the present invention, the bias layer is provided on the surface of the free magnetic layer opposite to the surface on which the nonmagnetic material layer is formed via a nonmagnetic intermediate layer. Therefore, in the present invention, the free magnetic layer is strongly magnetized as in the prior art, and the fluctuation of magnetization is not deteriorated, or the problem of inhibition of single domain formation due to the buckling phenomenon does not occur, and the magnetization of the free magnetic layer is appropriately adjusted. Thus, it is possible to manufacture a magnetic sensing element having excellent read sensitivity by making the magnetic domain of the free magnetic layer excellent in fluctuation of magnetization.

Further, according to the method for manufacturing a magnetic sensing element of the present invention, a specular film can be easily and appropriately formed on both sides of a multilayer film. Also, after forming the multilayer film and before forming the specular film, by performing side milling on both end surfaces of the other layer film, a specular film capable of effectively exhibiting a mirror reflection effect is formed on both sides of the multilayer film. can do.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional view of a magnetic sensing element according to a first embodiment of the present invention, as viewed from a surface facing a recording medium;

FIG. 2 is a partial cross-sectional view of a magnetic sensing element according to a second embodiment of the present invention as viewed from a surface facing a recording medium;

FIG. 3 is a partial cross-sectional view of a magnetic sensing element according to a third embodiment of the present invention as viewed from a surface facing a recording medium;

FIG. 4 is a partial cross-sectional view of a magnetic sensing element according to a fourth embodiment of the present invention, viewed from a surface facing a recording medium;

FIG. 5 is a partial cross-sectional view of a magnetic sensing element according to a fifth embodiment of the present invention as viewed from a surface facing a recording medium;

FIG. 6 is a partial cross-sectional view of a magnetic sensing element according to a sixth embodiment of the present invention viewed from a surface facing a recording medium;

FIG. 7 is a partial schematic view of a multilayer film for explaining a specular reflection effect in the present invention;

FIG. 8 is a process chart showing a method for manufacturing the magnetic sensing element shown in FIG. 1;

9 is a view showing a step performed after the step shown in FIG. 8;

10 is a process chart performed after the step shown in FIG. 9,

11 is a process drawing performed after the step shown in FIG. 10,

FIG. 12 is a process chart showing a method for manufacturing the magnetic sensing element shown in FIG. 2 or FIG. 3;

13 is a process drawing performed after the step shown in FIG. 12,

14 is a process chart performed after the step shown in FIG. 13;

15 is a process drawing performed after the step shown in FIG. 14,

16 is a process drawing performed after the step shown in FIG. 15,

FIG. 17 is a process chart showing another method for forming a specular film in the present invention;

FIG. 18 is a process chart showing a method for manufacturing the magnetic sensing element shown in FIG. 6;

FIG. 19 is a process chart showing a method for manufacturing a magnetic sensing element according to another embodiment of the present invention;

FIG. 20 is a process drawing performed after the step shown in FIG. 19;

21 is a process drawing performed after the step shown in FIG. 20,

FIG. 22 is a partial cross-sectional view of the structure of a magnetic sensing element according to another embodiment of the present invention, as viewed from a surface facing a recording medium;

FIG. 23 is a partial cross-sectional view of the structure of a magnetic sensing element according to another embodiment of the present invention, as viewed from a surface facing a recording medium;

FIG. 24 is a partial cross-sectional view of the structure of a magnetic sensing element according to another embodiment of the present invention, as viewed from a surface facing a recording medium;

FIG. 25 is a partial cross-sectional view of the structure of a magnetic sensing element according to another embodiment of the present invention, as viewed from a surface facing a recording medium.

FIG. 26 is a partial cross-sectional view of a conventional magnetic sensing element viewed from a side facing a recording medium.

FIG. 27 is a partial schematic view of a CIP type magnetic sensing element,

FIG. 28 is a partial schematic view of a CPP type magnetic sensing element;

FIG. 29 is a partial schematic view of a multilayer film for explaining a problem of a conventional magnetic sensing element;

FIG. 30 is a partial cross-sectional view of the structure of another conventional magnetic sensing element viewed from the side facing a recording medium.

FIG. 31 is a partial cross-sectional view of the structure of another conventional magnetic sensing element viewed from a surface facing a recording medium.

[Explanation of symbols]

 Reference Signs List 20 first electrode layer 21 underlayer 22 seed layer 23 antiferromagnetic layer 24 fixed magnetic layer 25 nonmagnetic material layer 26 free magnetic layer 27 nonmagnetic intermediate layer 28 bias underlayer 29, 43 hard bias layer 30, 34, 42 Multilayer film 31 Specular film 32, 39, 44 Insulating layer 33, 35 Second electrode layer 37 Substrate 38, 40, 41 Resist layer

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01F 41/18 H01L 43/12 H01L 43/12 G01R 33/06 RF term (Reference) 2G017 AA01 AB07 AD55 AD65 5D034 BA02 BA03 CA06 5E049 AA01 AA04 AA07 AA09 AC05 BA16 CB02 DB12 GC01

Claims (31)

[Claims] 1. A magnetic sensing element provided with a multilayer film having an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer, wherein a current flows in a direction perpendicular to a film surface of each layer of the multilayer film. On the surface of the free magnetic layer opposite to the surface on which the nonmagnetic material layer is formed, a bias layer is provided via a nonmagnetic intermediate layer, and at least each of the layers from the fixed magnetic layer to the free magnetic layer is provided. A magnetic detecting element, wherein specular films are provided on both end surfaces in the track width direction. 2. The magnetic sensing element according to claim 1, wherein both end surfaces of each layer from the pinned magnetic layer to the free magnetic layer are continuous surfaces. 3. The specular film is made of Fe—O, Ni
-O, Co-O, Co-Fe-O, Co-Fe-Ni-
O, Al-O, Al-Q-O (where Q is B, Si,
One or more selected from N, Ti, V, Cr, Mn, Fe, Co, Ni), RO (where R is Cu, Ti,
The magnetic sensing element according to claim 1, wherein the magnetic sensing element is formed of an oxide of at least one selected from V, Cr, Zr, Nb, Mo, Hf, Ta, and W). 4. The specular film is made of Al—N, Al
-QN (where Q is B, Si, O, Ti, V, Cr,
One or more selected from Mn, Fe, Co, Ni), R
-N (where R is Ti, V, Cr, Zr, Nb, Mo,
The magnetic sensing element according to claim 1, wherein the magnetic sensing element is formed of a nitride of at least one selected from Hf, Ta, and W). 5. The specular film according to claim 3, wherein a metal element or a non-metal element formed on both end surfaces in the track width direction of the multilayer film is oxidized or nitrided. Magnetic sensing element. 6. The magnetic device according to claim 3, wherein the specular film is formed by depositing the oxide or nitride directly on both end surfaces in the track width direction of the multilayer film. Detection element. 7. The specular film is formed of an insulator attached to both end surfaces of the multilayer film when milling insulating layers provided on both sides of the multilayer film in the track width direction, or the insulator The magnetic sensing element according to claim 3, wherein the magnetic sensing element is formed by oxidizing or nitriding. 8. An insulating layer is provided on both sides of the multilayer film in the track width direction, and the specular film is formed from above the insulating layer to both end surfaces in the track width direction of the multilayer film. 7. The magnetic sensing element according to any one of 6. 9. The magnetic sensing element according to claim 3, wherein the specular film is formed by oxidizing or nitriding both end faces in the track width direction of the magnetic sensing element. 10. The magnetic sensing element according to claim 1, wherein the specular film is formed of a semi-metallic Whistler alloy. 11. The magnetic sensing element according to claim 1, wherein the nonmagnetic intermediate layer is formed of a nonmagnetic conductive material. 12. The non-magnetic intermediate layer is made of Ru, Rh, I
The magnetic sensing element according to claim 11, wherein the magnetic sensing element is formed of one or more alloys of r, Cr, Re, and Cu. 13. The magnetic sensing element according to claim 1, wherein an insulating layer is formed on both sides of the specular film in a track width direction. 14. A method for manufacturing a magnetic sensing element, comprising the following steps. (A) forming a first electrode layer on a substrate;
Forming a multi-layered film from the bottom in the order of an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, a free magnetic layer, a non-magnetic intermediate layer, and a bias layer on the electrode layer; Forming a resist layer thereon and removing the multilayer film not covered by the resist layer; and (c) a specular film extending from the first electrode layer to both end surfaces in the track width direction of the multilayer film. Forming (d)
Forming an insulating layer on the specular film and removing the resist layer; and (e) forming a second electrode layer from the insulating layer to the bias layer. 15. The method according to claim 14, further comprising the following steps between the steps (b) and (c). (F) a step of cutting both sides of the multilayer film in the track width direction by ion milling. 16. The method according to claim 15, wherein the ion milling angle is inclined by 20 ° to 70 ° with respect to a vertical direction of the upper surface of the substrate. 17. The method according to claim 14, further comprising the following steps between the step (d) and the step (e). (G) a step of scrub cleaning the insulating layer from above the bias layer; 18. The method according to claim 18, wherein the specular film is made of Fe—O, N
i-O, Co-O, Co-Fe-O, Co-Fe-Ni
-O, Al-O, Al-Q-O (where Q is B, Si,
One or more selected from N, Ti, V, Cr, Mn, Fe, Co, Ni), RO (where R is Cu, Ti,
18. The method for manufacturing a magnetic sensing element according to claim 14, wherein the magnetic sensing element is formed of an oxide of at least one selected from V, Cr, Zr, Nb, Mo, Hf, Ta, and W). 19. The specular film according to claim 18, wherein a metal element or a nonmetal element is formed on both sides of the multilayer film in the track width direction, and then the metal element or the nonmetal element is oxidized to form the specular film. A method for manufacturing a magnetic sensing element. 20. The method according to claim 19, wherein the specular film is oxidized by at least one of radical oxidation, ion oxidation, plasma oxidation and natural oxidation. 21. The specular film is formed of Al—N, A
l-QN (where Q is B, Si, O, Ti, V, C
r, Mn, Fe, Co, Ni or more), RN (where R is Ti, V, Cr, Zr, N
18. The method for manufacturing a magnetic sensing element according to claim 14, wherein the magnetic sensing element is formed of a nitride of at least one selected from b, Mo, Hf, Ta, and W). 22. The specular film according to claim 21, wherein a metal element or a nonmetal element is formed on both sides of the multilayer film in the track width direction, and then the metal element or the nonmetal element is nitrided to form the specular film. A method for manufacturing a magnetic sensing element. 23. The method of manufacturing a magnetic sensing element according to claim 18, wherein the oxide or nitride is formed directly on both sides of the multilayer film in the track width direction to form the specular film. 24. In the step (c), the specular film or a metal element or a nonmetal element is formed by sputtering at an irradiation angle of 20 ° to 70 ° with respect to a vertical direction of an upper surface of the substrate. 24. The method of manufacturing a magnetic sensing element according to any one of claims 23 to 23. 25. Before the step (c), there is a step of providing an insulating layer on both sides of the multilayer film in the track width direction. In the step (c), the insulating layer is milled. By attaching the insulating layer to both end surfaces of the multilayer film,
22. The method of manufacturing a magnetic sensing element according to claim 14, wherein a specular film is formed by oxidizing or nitriding the attached insulating layer. 26. A step of providing an insulating layer on both sides of the multilayer film in the track width direction before the step (c). In the step (c), the insulating film is formed from above the insulating layer. 25. The method of manufacturing a magnetic sensing element according to claim 14, wherein a specular film is formed on both end surfaces in the track width direction. 27. The magnetic sensing element according to claim 14, wherein, in the step (c), a specular film is formed by oxidizing or nitriding both end faces in the track width direction of the multilayer film. Production method. 28. The method for manufacturing a magnetic sensing element according to claim 14, wherein the specular film is formed of a semi-metallic Whistler alloy. 29. The method according to claim 14, wherein the non-magnetic intermediate layer is formed of a non-magnetic conductive material. 30. The non-magnetic intermediate layer is formed of Ru, Rh, I
30. The method of manufacturing a magnetic sensing element according to claim 29, wherein the magnetic sensing element is formed of one or more alloys of r, Cr, Re, and Cu. 31. After forming a first electrode layer on a substrate in the step (a), a bias layer, a non-magnetic intermediate layer, a free magnetic layer, a non-magnetic material are formed on the first electrode layer from below. 31. The method of manufacturing a magnetic sensing element according to claim 14, wherein a multilayer film is formed in the order of a layer, a pinned magnetic layer, and an antiferromagnetic layer.